CN1581455A - Improved semiconductor chip and lead-out wire welding mould - Google Patents
Improved semiconductor chip and lead-out wire welding mould Download PDFInfo
- Publication number
- CN1581455A CN1581455A CN 200410071751 CN200410071751A CN1581455A CN 1581455 A CN1581455 A CN 1581455A CN 200410071751 CN200410071751 CN 200410071751 CN 200410071751 A CN200410071751 A CN 200410071751A CN 1581455 A CN1581455 A CN 1581455A
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- lead
- semiconductor chip
- out wire
- wire welding
- raw material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The present invention are improvements on semiconductor chips of semi-conductor devices such as diodes, triodes, bridge stacks and the like and the moulds used for welding 'leading-out' wires in the electronic industry, which is characterized in that ceramic raw material fine powder, especially those having excellent heat and cold urgent denaturalization, small coefficient of heat expansion, small contractibility, such as one of mullite, dichroite, silicon dioxide, metallic silicon powder, silicon carbide, silicon nitride, sialon is adopted as a main raw material that suffers one-shot forming through moulds and then are sintered. The product not only is easy to fabricate but also is formed in one piece, with well controlled accuracy and sizes, high product precision, relatively higher rate of finished products and low fabricating cost; especially ceramic moulds, as non-deformable high-temperature isolator, possesses nice hardness and elevated temperature strength, excellent antifriction property, corrosion resistance and oxidation resistance, has a long practical service life, wherein tests approve that the practical service life thereof is 5-10 times that of graphite welding models and 4-6 times that of metal molds. By adopting ceramic materials with excellent heat and cold urgent denaturalization, small coefficient of heat expansion and small contractibility as main raw materials, the sintering rate of finished products of product is improved, with nice heat diffusivity, superior heat and cold urgent denaturalization resistance, small heat expansion and longer service lifetime.
Description
Technical field
The present invention is to the electron trade semiconductor device, and as the improvement of semiconductor chip such as diode, triode, bridge heap and lead-out wire welding die, it is long to relate in particular to a kind of repeated use life-span, and to the good welding mould of welding chip security.
Background technology
Semiconductor chip and lead-out wire welding dies (claiming welding modulus of conversion, welded plate, welding boat, chips welding device again) such as electron trade such as diode, triode, bridge heap, on the downhand welding fishplate bar, be intensively distributed with the pore and/or the various special-shaped groove of numerous arrangements, during the welding of chip, lead-out wire by two block welding moulds to folder, put into stove heat (300-700 ℃) lead-in wire and chip are reached be welded to connect.Because welding nib, special-shaped groove arranging density are greatly (on 150 * 120 * 3-10mm flat board, be evenly distributed with nearly 1495 of the hole of Φ 0.6mm, adjacent holes centre-to-centre spacing only 2.5 * 2.5mm), and hole, special-shaped groove and arrangement required precision are high, and seek template and have higher evenness, involutoryly not contraposition of hole can not be occurred, uneven slit can not be occurred again.Therefore prior art is all thought unique and can only be made by adopting machinery dig the cutter processing method, otherwise be difficult to reach above-mentioned requirements, so all be on the graphite of moulding or metallic plate, to process required hole, special-shaped groove one by one for a long time, by mechanical punching, fluting.Yet machinery digs cutter machine-shaping, and because of the hole, groove is intensive and special-shaped, required precision is high again, not only difficulty of processing is bigger, and is careless slightly in the course of processing, just occurs scrapping easily, the processed finished products rate is lower; And actual life is all not long.As graphite welding mould, because material hardness is lower, Mohs' hardness only is 1-2, the utmost point is not wear-resisting, and frequent use perforations and surface are more easy to wear, and useful life is shorter, has only some months general useful life, and because graphite has conductivity, the graphite particulate that wearing and tearing are dropped drops on chip surface, also causes chip rejection easily.The metal solder mould, repeated use is in the temperature alternating environment, cause distortion to warp easily, to having the slit behind the folder, cause some semiconductor chip and lead-in wire can not obtain fine welding, and hole, special-shaped groove are also wear-resisting inadequately, use can to produce after a period of time and do not wish the wear print that produces, thereby actual serviceable bife is not long yet.Therefore, the welding mould is short useful life, and difficulty of processing is big, and rate of finished products is low, has become a big technical barrier in the industry, is all effectively solved for a long time, so actual production at present has only the graphite of use or metal solder mould.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned prior art, a kind of long service life is provided, not yielding, wear-resistant, can use semiconductor chip that fabrication yield is high and lead-out wire welding mould for a long time repeatedly.
The object of the invention realizes that main the improvement adopts the ceramic raw material fine powder through the mould one-shot forming, and then sintering is made.
This product is because the hole is intensive and the arrangement required precision is high, and use be two involutory in pairs, so ceramic raw material fine powder of the present invention, wherein better be adopt that cold and hot acute degeneration is good, thermal coefficient of expansion and shrinkage is little, resistance to wear is excellent ceramic material make main material, for example with the mullite in the oxide ceramics and/or cordierite and/or silicon dioxide; Metallic silicon power in nitride or the carbide ceramics and/or carborundum and/or silicon nitride; Sai Long or its combination as the Main Ingredients and Appearance of ceramic raw material, reduces contraction change in the sintering procedure with this, improves product and fires rate of finished products.Main material of the present invention is meant in the product constitutive material this component amount at least greater than more than 55% (WT), wherein better is greater than on 70%.According to the ceramic raw material characteristic, ceramic welding mold of the present invention can be with above-mentioned a kind of main material moulding, also can be based on above-mentioned main material, is equipped with other component raw materials again, to reduce expansion or the contraction in the sintering process, improves sintering finished rate.
Through test, the present invention welds mould and preferably adopts the metallic silicon of 80-99% and aluminium oxide or zirconia or the lithium compound composition of 1-20%, its resistance to wear and hardness are better, longer service life, and in the welding process of heating in stove, unmatchful chip has dysgenic volatile matter to produce.Lithium compound of the present invention can be various lithium compounds commonly used in the pottery, and for easy, economical, the present invention preferably adopts the natural lithium minerals raw material that contains, for example spodumene (spodumene), amblygonite mineral such as (amblygonite).
Ceramic raw material fine powder mould of the present invention one-shot forming, its forming method can have three kinds: a kind of organic binder bond that adds convention amount for the ceramic raw material fine powder material, for example polyvinyl alcohol (PVA), methylcellulose (CMC) mix and stir or granulation, also can add the high temperature sintering bond of convention amount, as clay class mineral, through mould compression moulding (dry-pressing formed); Another kind is the ceramic raw material fine powder, and the paraffin (for example 13-26%) that adds convention amount is made the slurry cake, adopts the mould heat pressure injection forming then; Another is the ceramic raw material fine powder, adds water and/or binding agent is made moulded pottery not yet put in a kiln to bake, through compression molding.Formed product of the present invention, wherein especially with dry-pressing formed be good, not only moulding is simple, and it is higher relatively to obtain density, superior in quality, it is minimum to fire shrinkage, rate of finished products high product.
Semiconductor chip of the present invention and lead-out wire welding mould tool, overcome people's prejudice, select to adopt that cold and hot acute degeneration is good, thermal coefficient of expansion and shrinkage is little, resistance to wear is excellent ceramic fine powder be through the mould one-shot forming, make that not only manufacturing is easy, and one-shot forming, precision and size Control are good, product (hole) accuracy height, rate of finished products is higher relatively, has omitted a large amount of cumbersome machineries by hole processing, greatly reduces production cost; Especially ceramic die, be indeformable high-temperature insulation body, hardness and elevated temperature strength are good, resistance to wear, corrosion-resistant and oxidative resistance is all good, and prolonged and repeated use is indeformable, actual life is long, there is no electrically conductive particles and produce, can not damage welding chip, through experiment confirm, can improve 5-10 doubly than graphite welding mould actual life, is 4-6 times of metal pattern.Especially adopt that cold and hot acute degeneration is good, thermal coefficient of expansion and shrinkage is little, resistance to wear is excellent ceramic material make main material, improved the sintering finished rate of product especially, and cold-resistant hot acute degeneration is good, thermal expansion is minimum, the hardness height, resistance to wear is good, has longer useful life.Metallic silicon and aluminium oxide or zirconia or lithium compound are formed, and gained mould resistance to wear and hardness are better, longer service life, and in the welding process of heating in stove, unmatchful chip has dysgenic volatile matter to produce.The present invention is as semiconductor chip and lead-out wire welding such as diode, triode, bridge heaps, and good weld mold is provided, and has solved unresolved for a long time technology barrier.
Description of drawings
Fig. 1 is welding mould plan structure schematic diagram commonly used.
Fig. 2-Fig. 7 is various pass sectional structure schematic diagrames.
Embodiment
Embodiment 1:Li
2O 8.5%, Al
2O
331.5%, SiO
260%.After being processed into fine powder, adding additives (as polyvinyl alcohol) through dry-pressing formed, adopts normal oxidation flame sintering.
Embodiment 2:Li
2O 8.5%, Al
2O
313.7%, SiO
277.8%.After being processed into fine powder, adding additives mixes and stirs granulation, after dry-pressing formed, adopts normal oxidation flame sintering.
Embodiment 3: commercial synthesis of dichroite 90%, Li
2O6%, kaolin (high-temperature agglomerant) 4% is processed into fine powder, and add paraffin and make the slurry cake, through the hot pressing injection forming, behind the de-waxing, the oxidizing flame sintering.
Embodiment 4: synthesis of dichroite 95%, and kaolin 5% is processed into fine powder, and add paraffin and make the slurry cake, through hot-injection molding, behind the de-waxing, the oxidizing flame sintering.
Embodiment 5: mullite synthesizing 70%, and carborundum 25%, kaolin 5% is processed into fine powder, and adding additives mixes and stirs granulation, after dry-pressing formed, the oxidizing flame sintering.
Embodiment 6: mullite synthesizing 95%, and kaolin 5% is processed into fine powder, and add water and make moulded pottery not yet put in a kiln to bake, after the compression molding drying, the oxidizing flame sintering.
Embodiment 7: metallic silicon power, add polyvinyl alcohol adhesive, and after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 8: metallic silicon power 80%, Si
3N
420%, outer adding additives, after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 9: metallic silicon power 70%, and SiC 30%, adds polyvinyl alcohol adhesive, after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 10: metallic silicon power 85%, and aluminium oxide 15% is processed into fine powder, adds the 4%PVA binding agent, after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 11: metallic silicon power 90%, and natural lithium pyroxene mineral 10% are processed into fine powder, add the 4%PVA binding agent, after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 12: metallic silicon power 95%, and zirconia 5% is processed into fine powder, adds the 4%PVA binding agent, after dry-pressing formed, the nitrogen reaction-sintered.
Embodiment 13:Si
3N
425%, SiC 75%, adds polyvinyl alcohol adhesive, after dry-pressing formed, and the recrystallization sintering.
Embodiment 14:Sialon 85%, SiC 15%, is processed into fine powder, and adding additives mixes and stirs granulation, after dry-pressing formed, is embedded in sintering in silicon nitride and the silica mixed powder.
Shaping mould of the present invention is looked weld mold body opening type etc., and is different.
Percentage amounts of the present invention is weight (WT) percentage amounts.
Claims (9)
1, a kind of semiconductor chip and lead-out wire welding mould is characterized in that by the ceramic raw material fine powder through the mould one-shot forming, then sintering is made.
2,, it is characterized in that said ceramic raw material is main composition with the ceramic material that cold and hot acute degeneration is good, thermal coefficient of expansion is little, shrinkage is little according to described semiconductor chip of claim 1 and lead-out wire welding mould.
3,, it is characterized in that the main composition raw material of said pottery is a kind of or its combination in grand of mullite, cordierite, silicon dioxide, metallic silicon power, carborundum, silicon nitride, match according to described semiconductor chip of claim 2 and lead-out wire welding mould.
4, according to claim 2 or 3 described semiconductor chip and lead-out wire welding moulds, it is characterized in that said main composition be during raw material is formed this component amount at least greater than more than 55% (WT).
5,, it is characterized in that said main composition raw material is at least greater than more than 70% according to described semiconductor chip of claim 4 and lead-out wire welding mould.
6, according to claim 1,2 or 3 described semiconductor chip and lead-out wire welding moulds, it is characterized in that the metallic silicon by 80-99%, the aluminium oxide of 1-20% or zirconia or lithium compound are formed.
7,, it is characterized in that said lithium compound is for containing lithium minerals according to described semiconductor chip of claim 6 and lead-out wire welding mould.
8,, it is characterized in that the said lithium minerals that contains is a spodumene according to described semiconductor chip of claim 7 and lead-out wire welding mould.
9,, it is characterized in that said one-shot forming is dry-pressing formed according to described semiconductor chip of claim 1 to 8 and lead-out wire welding mould.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100717519A CN100454507C (en) | 2004-03-30 | 2004-07-25 | Improved semiconductor chip and lead-out wire welding mould |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200410014532 | 2004-03-30 | ||
| CN200410014532.7 | 2004-03-30 | ||
| CNB2004100717519A CN100454507C (en) | 2004-03-30 | 2004-07-25 | Improved semiconductor chip and lead-out wire welding mould |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1581455A true CN1581455A (en) | 2005-02-16 |
| CN100454507C CN100454507C (en) | 2009-01-21 |
Family
ID=34593137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100717519A Expired - Fee Related CN100454507C (en) | 2004-03-30 | 2004-07-25 | Improved semiconductor chip and lead-out wire welding mould |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100454507C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104032432A (en) * | 2014-06-25 | 2014-09-10 | 江西盛祥电子材料有限公司 | Manufacturing process of high-strength ceramic yarn collection plate for warping machine |
| CN104591699A (en) * | 2015-02-03 | 2015-05-06 | 许行彪 | Ceramic material for metal and high-temperature glass insulator welding encapsulation mold |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4434134A (en) * | 1981-04-10 | 1984-02-28 | International Business Machines Corporation | Pinned ceramic substrate |
| JP2575996B2 (en) * | 1992-05-01 | 1997-01-29 | 株式会社神戸製鋼所 | Wire drawing die material for welding material |
| JP2546618B2 (en) * | 1993-12-03 | 1996-10-23 | 冨士ダイス株式会社 | Heat piece |
| US5718361A (en) * | 1995-11-21 | 1998-02-17 | International Business Machines Corporation | Apparatus and method for forming mold for metallic material |
| JP2000026177A (en) * | 1998-07-09 | 2000-01-25 | Toshiba Ceramics Co Ltd | Production of silicon-silicon carbide ceramics |
-
2004
- 2004-07-25 CN CNB2004100717519A patent/CN100454507C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104032432A (en) * | 2014-06-25 | 2014-09-10 | 江西盛祥电子材料有限公司 | Manufacturing process of high-strength ceramic yarn collection plate for warping machine |
| CN104032432B (en) * | 2014-06-25 | 2016-11-16 | 江西盛祥电子材料股份有限公司 | A kind of warping machine porcelain collection filament plate processing technology |
| CN104591699A (en) * | 2015-02-03 | 2015-05-06 | 许行彪 | Ceramic material for metal and high-temperature glass insulator welding encapsulation mold |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100454507C (en) | 2009-01-21 |
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