CN1574244A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment Download PDF

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Publication number
CN1574244A
CN1574244A CNA2004100481258A CN200410048125A CN1574244A CN 1574244 A CN1574244 A CN 1574244A CN A2004100481258 A CNA2004100481258 A CN A2004100481258A CN 200410048125 A CN200410048125 A CN 200410048125A CN 1574244 A CN1574244 A CN 1574244A
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CN
China
Prior art keywords
electrode
semiconductor
fabricating device
cleaning
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100481258A
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Chinese (zh)
Other versions
CN100454495C (en
Inventor
崔熙焕
宋仁虎
姜聖哲
金湘甲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1574244A publication Critical patent/CN1574244A/en
Application granted granted Critical
Publication of CN100454495C publication Critical patent/CN100454495C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided is a semiconductor manufacturing apparatus which can perform non-periodic cleaning. This dry etching apparatus includes a chamber for performing dry etching while generating plasma, an exhaust outlet for exhausting a reactive gas in the chamber, a lower electrode on which a substrate is placed, an upper electrode which is separated from and faces to the lower electrode, and a cleaning section. The cleaning section includes a cleaning electrode which is electrically connected with a power supply section, and generates the plasma including a cleaning gas when the chamber is cleaned, an electrode guide for guiding the cleaning electrode so as to move in the horizontal direction, and an electrode supporter for guiding the cleaning electrode so as to move in the vertical direction while supporting the cleaning electrode. While generating the plasma by applying a power supply to the cleaning electrode, a contaminated material remaining on the inner wall of the chamber is removed.

Description

Semiconductor-fabricating device
Technical field
The present invention relates to a kind of semiconductor-fabricating device, more particularly, relate to a kind of plasma type device for dry etching.
Background technology
In semiconductor manufacturing process, use such as by sputter or deposit film forming film deposition apparatus, to the wet type or the dry-etching device of film patterning case, be used for photosensitive layer being carried out the exposure device of video picture at interior multiple arrangement and equipment to what film patterning case was used as mask.
These devices regularly or on demand decompose and clean, with trouble saving and improve product percent of pass.
When particularly carrying out dry ecthing, combine with the condensate state with etching gas from the photoresist of semiconductor chip and to adhere to, thereby polluting device seems particularly important so regularly clean.
Yet, still worked before regularly cleaning attached to the particle on the plasma casing as pollutant sources, the plasma formation condition that it forms when also changing dry ecthing, and then influence formed characteristics of plasma.As a result, it becomes the reason that influences the semiconductor element reliability that forms on the substrate.
Summary of the invention
The present invention is intended to solve above-mentioned drawback, the purpose of this invention is to provide a kind of semiconductor-fabricating device that can irregularly clean.
In order to achieve the above object, semiconductor-fabricating device according to the present invention comprises the cleaning part that cleans by plasma.
More particularly, the semiconductor-fabricating device according to the embodiment of the invention comprises: casing has gas inlet or exhaust outlet; First electrode is positioned at box house and ground connection; Second electrode forms the plasma that comprises purge gas with first electrode, and is electrically connected with first electrode; And power supply, be electrically connected, provide formation to clean with second electrode and use the plasma energy.
Semiconductor-fabricating device can use by the film forming sputter equipment of sputter or by plasma and carry out etched device for dry etching or the chemical vapor deposition means by the chemical vapor deposition film forming.
Preferably, this semiconductor-fabricating device when the device for dry etching, also should comprise it in the face of first electrode, comprise do constantly with gas, form the isoionic third electrode of dry ecthing.Preferably, first electrode has the gas inlet of dry ecthing with the gas channeling box house.
Apply to second electrode and to exchange or direct current can produce to clean and uses plasma.Preferably, second electrode comprises the protective of electric conductor and encirclement electric conductor.
Semiconductor-fabricating device according to this embodiment of the invention also can comprise: electrode support is used to support second electrode, makes to form and clean with the isoionic second electrode vertical moving; And the electrode guide member, be used for the support electrode supporter, the formation cleaning is moved horizontally with isoionic second electrode.
And second electrode can form the shape of a hoof or annular.Semiconductor-fabricating device also can comprise electrode support, is used to support second electrode, makes to form and clean with the isoionic second electrode vertical moving.
Description of drawings
Above-mentioned and other advantage of the present invention will be by describing embodiment in detail with reference to the accompanying drawings, thereby become more obvious, wherein:
Fig. 1 is the fragmentary cross sectional view according to the device for dry etching structure of first embodiment of the invention;
Fig. 2 according to first embodiment of the invention, be included in the cleaning part actual plane figure in the device for dry etching;
Fig. 3 and Fig. 4 are the concrete process charts according to the cleaning engineering of the device for dry etching of first embodiment of the invention;
Fig. 5 is the fragmentary cross sectional view according to the device for dry etching structure of second embodiment of the invention; And
Fig. 6 according to second embodiment of the invention, be included in the cleaning part actual plane figure in the device for dry etching;
Embodiment
In order to make those skilled in the art can implement the present invention, describe the preferred embodiments of the present invention in detail referring now to accompanying drawing.But the present invention can show as multi-form, the embodiment that it is not limited in this explanation.
Below, with reference to the semiconductor-fabricating device of accompanying drawing detailed description according to the embodiment of the invention.Having the cleaning part that utilizes plasma to remove to remain in the contaminant particles of box house according to the semiconductor-fabricating device of the embodiment of the invention, is that example describes with the device for dry etching to this.
Fig. 1 is the fragmentary cross sectional view according to the device for dry etching structure of first embodiment of the invention.Fig. 2 according to first embodiment of the invention, be included in the cleaning part actual plane figure in the device for dry etching.
With reference to Fig. 1 and Fig. 2, device for dry etching according to the present invention comprises: form the casing 10 that plasma carries out the dry ecthing operation; Comprise the following two ends that are positioned at casing 10 inside, the exhaust outlet 13 of the reacting gas when discharging casing 10 inner airs or dry ecthing, and the semiconductor chip of the object of handling or the lower electrode 11 that display is used substrate are set; With lower electrode 11 in the face of separating, and be positioned at the upper electrode 12 of casing 10 upper interior.And, comprise with upper electrode 12 and lower electrode 11 being electrically connected, between upper electrode 12 and lower electrode 11, in order to form dry ecthing with plasma provide first power supply 40 of institute energy requirement in the casing 10 with inflow gas.Though specifically show in the drawings, comprise according to the device for dry etching of the embodiment of the invention making etching go into casing 10 gas inside inlets with reacting gas flow.Make the reacting gas that flows into from the gas inlet casing 10 gas inside inlets that evenly lead when being evenly distributed with dry ecthing on the upper electrode 12.
In addition, the device for dry etching according to the embodiment of the invention comprises cleaning part 20.Cleaning part 20 comprises: the purge gas that flows into the gas inlet and upper electrode 12 together form cleaning with isoionic cleaning usefulness electrode 21; Electrode guide member 23 and support cleaning electrode 21 that the guiding cleaning moves horizontally with electrode 21, and the guiding cleaning provides the second source 50 of formation cleaning with the required energy of plasma with the electrode support 22 of electrode 21 vertical moving and to cleaning with electrode 21.
At this moment, be formed on the gas inlet on the device for dry etching upper electrode 12 of the embodiment of the invention, near more with the distance of exhaust outlet 13, its density is more little, and far away more with exhaust outlet 13 distances, its density is big more.Like this, can prevent dry ecthing reacting gas gathering around exhaust outlet 13, reacting gas can evenly arrive substrate surface, thereby carries out uniform etching.
Describe effect in detail according to Fig. 1 and Fig. 2 according to device for dry etching of the present invention.
Device for dry etching according to the present invention injects the etching reacting gas that at least more than one one-tenth is grouped into by the gas inlet in casing 10.Then, the reacting gas of injection transmits by the conversion zone diffusion of gas inlet between upper electrode 12 and lower electrode 11 that is formed on upper electrode 12., can make different along with the distance that is formed on lower electrode 12 both sides exhaust outlets 13 of the gas inlet that is formed on upper electrode 12 here, its size or that density is set is also different can guide the reacting gas of injection evenly to spread at conversion zone thus.
Then, in the lower electrode 11 of upper electrode 12 that is electrically connected with first power supply 40 and ground connection, apply the deviation power supply by first power supply 40, in casing 10, form the vertical electric field and the magnetic field of level at lower electrode 11.The free electron that lower electrode 11 is emitted is obtained the kinetic energy acceleration by electromagnetic field after,, collide with reactant gas molecules, and transmit energy thereupon to reacting gas by flowing into the reacting gas of conversion zone.Obtain the reacting gas ionization of these energy at this, after these ions also obtain kinetic energy and acceleration by electromagnetic field, by reacting gas, and to reacting gas transmission energy.Along with carrying out repeatedly of this process, conversion zone in casing 10 forms the dry ecthing plasma of coexistences such as cation, anion, atomic group, the film that the reacting gas of this plasmoid and wafer or substrate 100 tops form carries out chemical reaction or carries out physical impacts, etch thin film.
At this moment, one one of reacting gas as on the wall of pollutant attached to upper electrode 12 or casing 10, can utilize cleaning part 20 in order to remove these pollutants.
So, the operation to cleaning in this device for dry etching according to the embodiment of the invention is specifically described with reference to accompanying drawing.
Fig. 3 and Fig. 4 are the concrete process charts according to the matting of the device for dry etching of first embodiment of the invention.
With reference to Fig. 3, comprise the electric conductor 212 that conductive material is formed with electrode 21 and prevent electric conductor protective 211 212 that expose, that form by pottery etc. according to the cleaning of the embodiment of the invention.
At first, detect casing 10 internal faces or electrode surface deposition or increase the residual pollutant that causes 60 by electricity or light, utilize second source 50 to apply direct current or AC bias voltage to the electric conductor 212 that cleans with electrode 21, and utilize electrode support 22, to clean with electrode 21 vertical (up and down) and move, it is moved to below the upper electrode 12 always, utilize again electrode guide member 23 will clean with electrode 21 levels (about) move.At this moment, effectively comprise such as fluorine serial gas or chlorine serial gas or the such purge gas of inert gas cleaning to casing 10 inner injections, by the gas inlet injection of upper electrode 12.So, form the cleaning usefulness plasma 30 of coexistences such as the cation that comprises purge gas, anion, atomic group at upper electrode 12 with between cleaning with electrode 21, purge gas and pollutant 60 carry out physics or chemical reaction, the result, pollutant comes off from the wall or the upper electrode 12 of casing 10, discharges by exhaust outlet 13.When mainly being metal material by fluorine series ion or atomic group during for series of polymers, removes pollutant 60 by chlorine series ion or atomic group or by inert gas.Therefore, utilize in the present embodiment to clean to form plasma cleaning case body pollution thing, so can in the needed time, clean easily with electrode.
In addition, it is very bar-shaped to clean electricity consumption in the first embodiment of the present invention, but it can also be horse-hof shape or ring-type, and this is specifically described with reference to the accompanying drawings.
Fig. 5 is the fragmentary cross sectional view according to the device for dry etching structure of second embodiment of the invention, Fig. 6 according to second embodiment of the invention, be included in the cleaning part actual plane figure in the device for dry etching.
With reference to Fig. 5 and Fig. 6, most of structure is identical with Fig. 1 and Fig. 2.
Yet, have the cleaning part 70 different with first embodiment according to the device for dry etching of second embodiment of the invention.The purge gas that cleaning part 70 usefulness gas inlets flow into forms to clean with casing 10 walls of ground connection use plasma, and comprising: annular is cleaned and used electrode 71; Support is cleaned with electrode 71 and is guided the electrode support 72 of its vertical moving and provide formation to clean the second source 50 of using plasma institute energy requirement to cleaning with electrode 71.
In this device for dry etching according to second embodiment of the invention, detect casing 10 internal faces or electrode surface deposition or increase the residual pollutant that causes 60 by electricity or light, utilize second source 50 to apply direct current or AC bias voltage to cleaning with electrode 71, and utilize electrode support 72, to clean with electrode 71 vertical (up and down) and move, and between cleaning, form to clean and use plasma with electrode 71 and casing 10 walls.At this moment, purge gas and pollutant carry out physics or chemical reaction, the result, and pollutant comes off from the wall of casing 10, discharges by exhaust outlet 13.
To remove pollutant with electrode 71 at whole walls of casing in order making to clean, to move up and down applying under the state of power supply, thereby can remove pollutant fully.
The cleaning part of this embodiment of the invention can be useful in the device for dry etching of reactive ion etching or PE or ICP mode equally.
The device for dry etching of first and second embodiment has cleaning part for the pollutant of removing casing inner face deposition according to the present invention, and this cleaning part is useful in equally electric conducting material is deposited film forming sputter equipment or by on the chemical vapor deposition means of chemical reaction film forming.Sputter equipment and chemical vapor deposition means be also as device for dry etching, first electrode with mutual electrical connection and ground connection with is connected and together forms cleaning with isoionic second electrode with cleaning with first electrode with power supply.At this moment, sputter equipment supports and to be deposited on semiconductor device or display unit with the object that comprises electric conducting material (target) on substrate top, comprises the third electrode that is connected power supply.The chemical vapor device comprises reaction gas supplying portion.Here, as first and second embodiment, first electrode can be upper electrode or cabinet wall.
In semiconductor-fabricating device of the present invention, utilize to clean to form plasma cleaning box house with electrode, clean with regular unlatching casing and compare, more can save scavenging period, can also prolong regular scavenging period.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (12)

1. semiconductor-fabricating device comprises:
Casing has gas inlet or exhaust outlet;
First electrode is positioned at described box house and ground connection;
Second electrode forms the plasma that comprises purge gas with described first electrode, and is electrically connected with described first electrode; And
Power supply is electrically connected, provides the described cleaning of formation plasma energy with described second electrode.
2. semiconductor-fabricating device according to claim 1 is characterized in that, described semiconductor device is as using by the film forming sputter equipment of sputter.
3. according to the semiconductor-fabricating device of claim 1, it is characterized in that described semiconductor device uses as carrying out etched device for dry etching by plasma.
4. semiconductor-fabricating device according to claim 3 is characterized in that, described semiconductor device also comprise with described first electrode surface to, form and to comprise the dry ecthing isoionic third electrode of dry ecthing with gas.
5. semiconductor-fabricating device according to claim 5 is characterized in that, described first electrode has the gas inlet that described dry ecthing is imported to described box house with gas.
6. semiconductor-fabricating device according to claim 1 is characterized in that, described semiconductor-fabricating device is as using by the chemical vapor deposition means of chemical vapor deposition film forming.
7. semiconductor-fabricating device according to claim 1 is characterized in that, applies to described second electrode to exchange or DC power supply, forms described cleaning plasma.
8. semiconductor-fabricating device according to claim 1 is characterized in that, described second electrode comprises electric conductor and surrounds the protective of described electric conductor.
9. semiconductor-fabricating device according to claim 1 is characterized in that, also comprises:
Electrode support is used to support described second electrode, in order to form described cleaning plasma, with the described second electrode vertical moving; And
The electrode guide member is used to support described electrode support, in order to form described cleaning plasma, described second electrode is moved horizontally.
10. semiconductor-fabricating device according to claim 9 is characterized in that, described second electrode is with bar-shaped formation.
11. semiconductor-fabricating device according to claim 1, it is characterized in that, described second electrode forms with horse-hof shape or ring-type, described semiconductor-fabricating device also comprises electrode support, be used to support described second electrode, in order to form described cleaning plasma, with the described second electrode vertical moving.
12. semiconductor-fabricating device according to claim 1 is characterized in that, described first electrode utilizes as the inwall of described casing.
CNB2004100481258A 2003-06-16 2004-06-16 Semiconductor manufacturing equipment Expired - Fee Related CN100454495C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0038710 2003-06-16
KR1020030038710A KR20040107983A (en) 2003-06-16 2003-06-16 Aperture for manufacturing a semiconductor device
KR1020030038710 2003-06-16

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CN1574244A true CN1574244A (en) 2005-02-02
CN100454495C CN100454495C (en) 2009-01-21

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US (1) US20050016568A1 (en)
JP (1) JP2005012217A (en)
KR (1) KR20040107983A (en)
CN (1) CN100454495C (en)
TW (1) TW200509242A (en)

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KR20060005560A (en) * 2004-07-13 2006-01-18 삼성전자주식회사 Apparatus for fabricating semiconductor device using plasma
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
JP2007149892A (en) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd Substrate processor and substrate processing method
JP5295748B2 (en) * 2008-12-18 2013-09-18 東京エレクトロン株式会社 Component cleaning method and storage medium
KR20120090996A (en) * 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 Method of decontamination of process chamber after in-situ chamber clean
EP3421638A1 (en) * 2017-06-28 2019-01-02 Meyer Burger (Germany) GmbH Device for high temperature cvd with a stacking assembly made from gas distributors and support plates

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JP2005012217A (en) 2005-01-13
TW200509242A (en) 2005-03-01
CN100454495C (en) 2009-01-21
US20050016568A1 (en) 2005-01-27
KR20040107983A (en) 2004-12-23

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