CN1564458A - Element structure utlizing photoshort circuit for generating sub-carrier lifetime guide electrical pulse - Google Patents
Element structure utlizing photoshort circuit for generating sub-carrier lifetime guide electrical pulse Download PDFInfo
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- CN1564458A CN1564458A CN 200410017436 CN200410017436A CN1564458A CN 1564458 A CN1564458 A CN 1564458A CN 200410017436 CN200410017436 CN 200410017436 CN 200410017436 A CN200410017436 A CN 200410017436A CN 1564458 A CN1564458 A CN 1564458A
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Abstract
Coplanar waveguide transmission line circuit is prepared on substrate of photoconductive material by using standard photo etching. Photoconduction gap is fabricated on a line with applied bias voltage. A right angle triangle prism is placed on the gap to span earthwire and charging wire. Using ultrashort light pulse irradiates the gap and area between signal line and earthwire. Irradiating the gap by using optical pulse turns photoconduction switch to off so as to form output electric signal. Delayed optical pulse arrived through triangle prism causes short circuit between signal line and earthwire, cuts off output electric signal to form output electric pulse. Width of the electric pulse is dependent light time delay. Thus, guided wave electrical pulse in sub-carrier lifetime. The invention is applicable to super fast area such as tera Hz pulse spectroscopy etc.
Description
Technical field
The present invention relates to a kind ofly utilize photic short circuit to produce to utilize photic short circuit to produce the device architecture of inferior carrier lifetime guided wave electric pulse, belong to terahertz pulse generating technique field.
Background technology
The realization of Terahertz ultra broadband circuit performance detection and ULTRA-WIDEBAND RADAR all be unable to do without the generation of supershort electric pulse, and the method for utilizing photoelectron technology to produce supershort electric pulse has overcome the limitation of pure electronics technology.Utilize photoelectron technology to produce the technology of supershort electric pulse, mainly contain two kinds of schemes, a kind of is that photoconductivity switching is produced on the microwave transmission circuit, by utilizing the excitation of ultrafast light pulse, produces the guided wave electric pulse of propagating along transmission line.Another kind of scheme is to make the dipole radiation antenna on photoconductor, when using the dipole antenna slit of ultrafast laser pulse irradiation applying bias voltage, photo-generated carrier forms the transition surge current under the effect of applying bias voltage, the surge current of transition produces ultrafast pulse of electromagnetic radiation, is radiated free space by dipole antenna.Utilize photoconductivity switching and photoelectricity to be to the main distinction of the ultrashort pulse of antenna generation, utilize the width of the electric pulse of photoconductive antenna generation mainly to determine, and utilize the width of the ultrashort guided wave pulse of photoconductivity switching generation mainly to determine by the life-span of photo-generated carrier by the width of exciting light pulse.From Auston introduced photoconductivity switching and produces ultrashort guided wave electric pulse in microstrip circuit since, the technology of utilizing photoconductivity switching in the transmission line circuit to produce supershort electric pulse had obtained very big progress.Adopt short carrier lifetime photoconductive material such as irradiation damage silicon or low-temperature epitaxy GaAs to make photoconductivity switching, in conjunction with femto-second laser, the ultrashort guided wave electric pulse that produces psec and subpicosecond has been easier thing.The ultrashort guided wave electric pulse that this method produces is subjected to the restriction of carrier lifetime usually and can not reaches shorter.The width of the free space supershort electric pulse that the method that adopts photoconductive antenna to produce the free space terahertz pulse produces is mainly determined by the width of exciting light pulse, and it is little with the photo-generated carrier life-span relation of photoconductive material, thereby can produce the ultrashort terahertz pulse of inferior carrier lifetime, but the supershort electric pulse that this method produces has only extremely low power usually.These two kinds of schemes are each has something to recommend him, have his own strong points.Be radiated the ultrashort electromagnetic pulse of Terahertz of free space, because loss and chromatic dispersion are less, can keep its ultra broadband character, by adopting free space electro optic sampling or photoconductive dipole antenna that it is surveyed, be used to form time domain Terahertz spectrum technology, terahertz pulse imaging and tomoscan imaging technique.And, can be used for measuring the broadband nature of various ultrafast circuit by producing the guided wave supershort electric pulse of propagating along transmission line.
In the photoconductor age limit of photo-generated carrier the width of the guided wave electric pulse that can produce, the photo-generated carrier life-span of photoconductor commonly used is nanosecond and picosecond magnitude, produce shorter pulse and need adopt, increased cost greatly through the material of special processing (as irradiation damage) or the material of low temperature molecular beam epitaxy growth.Can the inventor have proposed utilize the method for photic short circuit, produces the imagination of the Terahertz supershort electric pulse of inferior carrier lifetime, to overcome many shortcomings that prior art exists, so draw conception of the present invention.
Summary of the invention
Purpose of the present invention provides a kind of device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime, it is from adopting photic short circuit to produce the ultrashort guided wave electric pulse of Terahertz, can be reduced to photo-generated carrier to the width of guided wave electric pulse below the life-span, only need just can produce extremely short electric pulse with general photoconductive material, the electric pulse pulse duration that overcomes traditional photoconductivity switching generation is set out by the shortcoming thinking of photo-generated carrier age limit.The propagation time delay characteristic that the present invention utilizes light wave to form naturally in triangular prism, the circuit of employing particular design forms the method that circuit breaker is induced in light pulse, produces the Terahertz guided wave electric pulse of inferior carrier lifetime.A kind of device architecture and manufacture method of utilizing photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime is provided.
The objective of the invention is specifically to implement by the following method:
Adopt standard photolithography techniques to make metal coplanar transmission circuit on semi-insulating photoconductive substrate, transmission line circuit itself is the electrode of applying bias just, utilizes DC power supply to give and adds Dc bias.Make a slit on the holding wire therein, to constitute the excitation region of photoconductivity switching.A right angle trigonometry prism is placed on place, this slit, strides and be placed between the complanar line, wherein be positioned over earth connection on one side than thickness portion.The exciting light pulse of incident is expanded bundle to the photoconductive slit that can not only cover on the holding wire, and can cover the zone between holding wire and the earth connection.Pass zone between triangular prism illumination slit and holding wire and the earth connection with femto-second laser pulse, because the propagation velocity of light pulse in the medium prism is slower than the propagation velocity in free space, the difference in height of triangular prism can cause exciting light pulse arriving signal line and earth connection by a time difference.The femto-second laser pulse photoconductive slit of at first throwing light on, photo-generated carrier makes the photoconductivity switching conducting, produce a step voltage of propagating along transmission line, through one section delay, the surface earthing line place that the thicker part of prism also arrives photoconductor is passed in the exciting light pulse, thereby between holding wire and earth connection, all produce photo-generated carrier, this can make short circuit between holding wire and the earth connection, the mismatch that resistance variations causes between holding wire and the earth connection can make voltage reflection cause an opposite step voltage output, thereby forms a square pulse on circuit.Because light arriving signal line and the time difference between the earth connection that triangular prism causes are very short, thereby the output electric pulse width that forms is also extremely short.
Device architecture provided by the invention is characterised in that: 1. general construction comprises: (1) it by photoconductive material substrate, coplanar waveguide transmission line, prism, DC power supply, laser constitution; (2) coplanar waveguide transmission line is positioned at the surface of photoconductive backing material, has a slit on bias voltage and the holding wire, is used for laser radiation; (3) across between holding wire and earth connection, the part that triangular prism is thin is placed on bias voltage and holding wire one side to place, slit placement triangular prism as light delay device, and thicker part is placed on earth connection one side.2. wide slit, 500 microns left and right sides is specially the 450-550 micrometer range on the holding wire of coplanar waveguide transmission line, to be used for laser radiation, makes circuit turn-on produce pulse.Coplanar waveguide transmission line spacing be about 10～100 microns.4. laser facula to cause the photic short circuit of transmission line, to block electric impulse signal, produces short pulse greater than the spacing of coplanar waveguide transmission line.5. the light delay device is arranged between the holding wire of coplanar waveguide transmission line and earth connection, make light arrive earth connection and postpone if having time than arriving the wire size line.6. the holding wire of coplanar waveguide transmission line and the light delay device between earth connection have adopted triangular prism, utilize triangular prism to make light arrival earth connection and holding wire that delay be arranged.7. structure arrangement and manufacturing process steps are: (1) makes coplanar transmission on the photoconductive material substrate; (2) leaving placement of place, slit and fixed light delayer (triangular prism); (3) add the bias direct current power supply; (4) with the laser radiation slit and to the zone of earth connection.
Device architecture provided by the invention is to adopt prior art, and concrete manufacture craft is:
The present invention and traditional photoconductivity switching difference are that the disconnection of traditional photoconductivity switching is reached by the compound of photo-generated carrier, thereby the trailing edge of the electric pulse that is produced is mainly determined by the life-span of charge carrier.And in the present invention, utilize to make the transmission line conducting and make electrical short with a branch of light pulse.The width of resulting electric pulse is passed the time difference decision of the different-thickness of triangular prism by light, and is no longer decided by the life-span of photo-generated carrier.If the relative dielectric constant of used triangular prism material is ε
r, then the propagation velocity of light in this material is
(c is the light velocity), establishing the difference in height of triangular prism between earth connection and holding wire is h, then light penetrates the time of delay that this section difference in height causes and is
Be approximately the pulse duration of output.
Description of drawings
The coplanar transmission circuit structure diagram of Fig. 1 for adopting.
Fig. 2 is the schematic diagram of coplanar transmission applying bias voltage mode.
Fig. 3 is a triangular prism modes of emplacement schematic diagram.
Fig. 4 utilizes photic short circuit to produce the structural representation of the ultrashort guided wave electric pulse of inferior carrier lifetime.Among the figure:
1: metal film; 2: the holding wire slit; 3: photoconductive substrate; 4: electric wire;
5: DC power supply; 6: triangular prism; 7: incident light pulse.
Embodiment
Below by specific embodiment, further specify invention substantive distinguishing features and obvious improvement.
Embodiment 1:
Titanium jewel femto-second laser is adopted in the exciting light pulse, and pulse duration is 100 femtoseconds, centre wavelength 800 nanometers.Adopt silicon substrate material as photoconductor, on silicon substrate, make width and be 5 microns, spacing and be 10 microns coplanar transmission, on bias voltage and holding wire, make one 500 microns slit.Add Dc bias to coplanar transmission.A right angle triangular prism is placed at the place in the slit.The part of triangular prism is placed on bias voltage and holding wire one side, and thicker part is placed on earth connection one side.Triangular prism forms 15 microns thickness difference between earth connection and holding wire, form the light delay about 100 femtoseconds.See through zone between triangular prism excitation photoconductivity switching slit and signal and the earth connection with selected laser, output obtain about 100 femtoseconds the output of Terahertz supershort electric pulse.
Embodiment 2:
Making width is 5 microns, and spacing is 50 microns a coplanar transmission, and other obtains the wide terahertz pulse of 0.5 psec with embodiment 1 at output.
Embodiment 3:
Other adopts not isosceles right triangle as embodiment 1, forms 30 microns thickness difference between earth connection and holding wire, obtains the wide terahertz pulse of 200 femtoseconds at output.
Claims (8)
1. device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime, it is characterized in that (1) it by photoconductive material substrate, coplanar waveguide transmission line, prism, DC power supply, laser constitution; (2) coplanar waveguide transmission line is positioned at the surface of photoconductive backing material, has a slit on bias voltage and the holding wire, is used for laser radiation; (3) across between holding wire and earth connection, the part that triangular prism is thin is placed on bias voltage and holding wire one side to place, slit placement triangular prism as light delay device, and thicker part is placed on earth connection one side.
2. by the described device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime of claim 1, it is characterized in that wide slit, the 450-550 micron left and right sides on the holding wire of coplanar waveguide transmission line, to be used for laser radiation, make circuit turn-on produce pulse.
3. by the described device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime of claim 1, it is characterized in that coplanar waveguide transmission line spacing be about 10～100 microns.
4. by the described device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime of claim 1, it is characterized in that laser facula greater than the spacing of coplanar waveguide transmission line to cause the photic short circuit of transmission line, to block electric impulse signal, produce short pulse.
5. by claim 1 or the 4 described device architectures that utilize photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime, it is characterized in that the holding wire of coplanar waveguide transmission line and the light delay device between earth connection adopt triangular prism, utilize triangular prism to make light arrival earth connection and holding wire that delay be arranged, electronic pulse width is passed the time difference decision of the different-thickness of triangular prism by light.
6. by the described device architecture that utilizes photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime of claim 5, it is characterized in that be the time of delay of triangular prism
In the formula ε
rBe the relative dielectric constant of triangular prism material, c is the light velocity, and h is triangular prism difference in height between earth connection and holding wire.
7. by the described device architecture manufacture method of utilizing photic short circuit to produce the guided wave electric pulse of inferior carrier lifetime of claim 1, it is characterized in that the arrangement of structure and manufacturing process steps are:
(1) on the photoconductive material substrate, makes coplanar transmission;
(2) leaving placement of place, slit and fixed light delayer;
(3) add the bias direct current power supply;
(4) with the laser radiation slit and to the zone of earth connection.
8. state the manufacture method of the device architecture of the guided wave electric pulse that utilizes photic short circuit to produce inferior carrier lifetime by claim 7, it is characterized in that described light delay device is a triangular prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100174368A CN1326324C (en) | 2004-04-02 | 2004-04-02 | Element structure utlizing photoshort circuit for generating sub-carrier lifetime guide electrical pulse |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100174368A CN1326324C (en) | 2004-04-02 | 2004-04-02 | Element structure utlizing photoshort circuit for generating sub-carrier lifetime guide electrical pulse |
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| CN1564458A true CN1564458A (en) | 2005-01-12 |
| CN1326324C CN1326324C (en) | 2007-07-11 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178220A (en) * | 2021-04-22 | 2021-07-27 | 北京航空航天大学 | Ultrafast electric pulse generating and detecting device and using method thereof |
| CN113540942A (en) * | 2021-05-31 | 2021-10-22 | 北京无线电测量研究所 | Fast-leading-edge microwave pulse generation device and method |
| WO2022222097A1 (en) * | 2021-04-22 | 2022-10-27 | 北京航空航天大学 | Ultra-fast electric pulse generating and detecting device and use method therefor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1027721C (en) * | 1992-06-03 | 1995-02-22 | 中国科学院上海光学精密机械研究所 | High power photoconductive switch pulser |
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2004
- 2004-04-02 CN CNB2004100174368A patent/CN1326324C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178220A (en) * | 2021-04-22 | 2021-07-27 | 北京航空航天大学 | Ultrafast electric pulse generating and detecting device and using method thereof |
| WO2022222097A1 (en) * | 2021-04-22 | 2022-10-27 | 北京航空航天大学 | Ultra-fast electric pulse generating and detecting device and use method therefor |
| CN113540942A (en) * | 2021-05-31 | 2021-10-22 | 北京无线电测量研究所 | Fast-leading-edge microwave pulse generation device and method |
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| CN1326324C (en) | 2007-07-11 |
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