CN1557998A - Method for preparing thin film by electric field deposition - Google Patents
Method for preparing thin film by electric field deposition Download PDFInfo
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- CN1557998A CN1557998A CNA2004100216854A CN200410021685A CN1557998A CN 1557998 A CN1557998 A CN 1557998A CN A2004100216854 A CNA2004100216854 A CN A2004100216854A CN 200410021685 A CN200410021685 A CN 200410021685A CN 1557998 A CN1557998 A CN 1557998A
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- film
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- electric field
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Abstract
The electric field deposition process of preparing film includes the following steps: preparing the dispersed system with deposited material or its precursor in liquid; setting the substrate for the film to be deposited on inside the dispersed system; constituting deposition circuit with power supply, wires, electrodes, etc and applying depositing electric field on the dispersed system with the deposition circuit; and forming the film via the oriented force of the electric field on the particles. The deposition process features that no closed current loop is formed by the substrate or the film on the substrate and the circuit to form the depositing electric field. The main advantage is no harmful electrode reaction on the depositing process and the deposited film.
Description
Technical field
The present invention relates to a kind of preparation method of film, especially in electric field, deposit the method that molecule prepares film.
Background technology
Electro-deposition method is one of main method of preparation thin-film material, especially uses comparatively extensive in molecule (nano level or micron order) film preparation.
In the present electro-deposition method, electrode all is arranged in dispersed system, and treats the base material double as electrode of deposit film, and the deposition circuit of being made up of power supply, lead, electrode, deposited film, dispersed system is the closing current loop.In the deposition process, there is electric field in the dispersed system, has sustained current in the deposition circuit.Particulate under utilizing electric field action in the dispersion system and ionic motion and electrode reaction obtain to have some deleterious electrode reactions in the thin-film material, as: the H in the dispersion system
+, OH
-Plasma absorbs (release) electronics and generates H on electrode
2, O
2Deng gas, these gases are grown up and deposited film are had destruction when excessive; The electrolysate of electrode has the possible of pollution to dispersion system, needs to use expensive rare metals such as platinum; May produce on the electrode and unwanted plating product etc.Because some harmful electrode reactions have certainty on thermodynamics, can't eradicate its harm to deposition process and deposited film fully.
Summary of the invention
The objective of the invention is, for overcoming the harm of harmful electrode reaction to deposition process and deposited film, provide a kind of new electro-deposition preparation method, promptly electric field deposition prepares the method for film.
The present invention includes: the dispersion system of particle in liquid of deposition material or its presoma treated in (1) preparation, (2) base material that will treat deposit film is inserted in the dispersion system, (3) form the deposition circuit by power supply [1], lead [2], electrode [4] etc., by the deposition circuit dispersion system is applied the deposition electric field, (4) utilize the orderly stressed and motion of particle in electric field that it is deposited on and form film on the base material.
The difference of the present invention and present electro-deposition method is: in the electric field deposition process of the present invention, treat deposit film base material [5] and (or) film [6] on it does not form the closing current loop with the circuit that forms the deposition electric field.
The present invention prepares at electric field deposition on the device of film and realizes.In the deposition process, treat that the depositional plane for the treatment of of the base material [5] of deposit film is arranged in dispersion system, and be in the deposition electric field.Because the particulate that is scattered in the liquid more or less all has surface charge, under orderly electrical forces effect, the charged corpuscle orientation moves on the substrate deposition surface, and progressively piling up becomes film.Through the subsequent disposal of necessity, can obtain the thin-film material that needs.
Among the present invention, since treat deposit film base material [5] and (or) film [6] on it with form the circuit (forming) that deposits electric field and do not form the closing current loop by power supply [1], lead [2], electrode [3] etc., treat deposit film base material [5] and (or) film [6] on it goes up the electrode reaction that no external electrical field causes, and can effectively prevent to be harmful to the harm of electrode reaction to deposition process and deposited film.
Beneficial effect of the present invention is mainly reflected in:
(1) utilizing electric field deposition to obtain effectively to have prevented of the harm of bad electrode reaction in the process of film to deposition process and deposited film.
(2) can control deposition process by adjusting dispersion system and deposition Electric Field Characteristics, obtain the film of various different structures, performance fast.
(3) can be on non-conductive substrate deposit film; Can deposit preparation non-conductive film.
(4) can use with process integrations such as plating, electroless platings, in technological processs such as plating, plating, apply the deposition electric field in addition, the particle deposition in the dispersion system in coating, is obtained composite deposite.
(5) utilize principle of the present invention, the present invention can be used for collecting the useful particulate in the dispersion system.Also can be used for the particulates emission in the dispersion system of place to go, the purifying dispersion system.
Description of drawings
Fig. 1 prepares the membrane unit schematic diagram for electric field deposition, wherein, and 1: power supply, 2: lead, 3: container, 4: electrode, 5: base material, 6: deposited film, 7: dispersion system.
Embodiment
Below in conjunction with accompanying drawing the present invention is further specified.
The device of the electric field galvanic deposit thin films among the present invention mainly is made up of power supply [1], lead [2], container [3], electrode [4], base material [5], deposited film [6] and dispersion system [7] etc.Power supply [1] is used to the energy that forms the deposition electric field is provided, and can comprise the display instrument that is used to regulate the control unit of power supply characteristics such as output voltage, frequency, waveform and is used for the display power supply characteristic in the power supply; Lead [2] is used to connect power supply [1] and electrode [4]; Electrode [4] adopts electric conductor to make usually, is used for forming electric field between two electrodes, and electrode can be positioned at outside the dispersion system, also can be positioned within the dispersion system; Container [3] is used for the splendid attire dispersion system.Base material [5] is used for bearing film, and it treats that depositional plane is arranged in dispersion system and deposition electric field; Deposited film [6] progressively forms after deposition process begins; Comprise in the dispersion system [7] and treat sedimentary particulate, liquid dispersant and other additives.
During electric field deposition, connect power supply [1], between electrode, form the deposition electric field, particulate in the dispersion system [7] orientation under orderly electrical forces effect moves on the depositional plane of base material [5], progressively pile up formation film [6],, obtain required thin-film material through the subsequent disposal of necessity.
Embodiment 1: electric field depositing nano CdS particle film on sheet glass
(1) be main raw material with analytical pure sodium sulphite, cadmium nitrate, deionized water.Chemical precipitation in ultrasonic wave, preparation CdS colloid.CdS concentration is 0.68gl in the colloid
-1The colloid splendid attire is in the Glass Containers of long 100mm, loose 40mm, dark 80mm.
(2) get the medical wave carrier piece of a slice (long 75mm, wide 25mm), in analytical pure hydrofluoric acid, soaked 5 seconds,, airing clean with deionized water and analytical pure acetone.Vertically put into splendid attire CdS colloidal Glass Containers, be close to the narrow facade of an end.
(3) each parallel aluminium flake that prevents the identical size of the narrow facade of a slice and container of 1mm place then outside the narrow facade of container, two aluminium flakes are that the two poles of the earth of the direct supply of 1000V are communicated with voltage respectively, wherein, connect positive source near the aluminium flake of wave carrier piece.
(4) open direct supply, after 6 minutes, take out wave carrier piece, clean at the 400ml ionized water and soak 1 hour to remove soluble ion.Take out wave carrier piece, 120 ℃ of oven dry.Acquisition is attached to the thin-film material of wave carrier piece.
Detect through XRD, the wave carrier piece surface deposits is CdS.Through scanning electron microscope observation, the CdS surfacing.Through the tunnel scanning electron microscope observation, the CdS median size is 30nm.
Claims (3)
1. an electric field deposition prepares the method for film, its technological process comprises: the dispersion system of particle in liquid of deposition material or its presoma treated in (1) preparation, (2) base material that will treat deposit film is inserted in the dispersion system, (3) form the deposition circuit by power supply [1], lead [2], electrode [4] etc., by the deposition circuit dispersion system is applied the deposition electric field, (4) utilize the orderly stressed and motion of particle in electric field that it is deposited on and form film on the base material; It is characterized in that in deposition process, treat that the base material [5] of deposit film and/or the film on it [6] do not form the closing current loop with the deposition circuit.
2. electric field deposition according to claim 1 prepares the method for film, it is characterized in that in deposition process, treats that the treat depositional plane and/or the film on it [6] of the base material [5] of deposit film is arranged in dispersion system.
3. electric field deposition according to claim 1 prepares the method for film, it is characterized in that in deposition process, treats that the treat depositional plane and/or the film on it [6] of the base material [5] of deposit film is arranged in the deposition electric field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410021685 CN1257317C (en) | 2004-01-14 | 2004-01-14 | Method for preparing thin film by electric field deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410021685 CN1257317C (en) | 2004-01-14 | 2004-01-14 | Method for preparing thin film by electric field deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1557998A true CN1557998A (en) | 2004-12-29 |
| CN1257317C CN1257317C (en) | 2006-05-24 |
Family
ID=34351989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410021685 Expired - Fee Related CN1257317C (en) | 2004-01-14 | 2004-01-14 | Method for preparing thin film by electric field deposition |
Country Status (1)
| Country | Link |
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| CN (1) | CN1257317C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105908244A (en) * | 2016-06-29 | 2016-08-31 | 刘伟 | Diamond wire preparation process |
| CN109576765A (en) * | 2019-01-10 | 2019-04-05 | 重庆大学 | Nanometer Mg/Fe2O3The low pressure preparation method of the film containing energy |
-
2004
- 2004-01-14 CN CN 200410021685 patent/CN1257317C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105908244A (en) * | 2016-06-29 | 2016-08-31 | 刘伟 | Diamond wire preparation process |
| CN109576765A (en) * | 2019-01-10 | 2019-04-05 | 重庆大学 | Nanometer Mg/Fe2O3The low pressure preparation method of the film containing energy |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1257317C (en) | 2006-05-24 |
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