CN1553751A - Electroluminescent display device - Google Patents
Electroluminescent display device Download PDFInfo
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- CN1553751A CN1553751A CNA2004100597038A CN200410059703A CN1553751A CN 1553751 A CN1553751 A CN 1553751A CN A2004100597038 A CNA2004100597038 A CN A2004100597038A CN 200410059703 A CN200410059703 A CN 200410059703A CN 1553751 A CN1553751 A CN 1553751A
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- electrode
- substrate
- electroluminescence element
- electroluminescence
- electroluminescent display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Abstract
An electroluminescence display device comprising a thin film transistor and an electroluminescence element wherein the electroluminescence element's anode and a portion of the thin film transistor's source/drain electrode are deposited on to a same surface and the electroluminescence element's anode and the portion of the thin film transistor's source/drain electrode overlap and make an electrical contact with improved contact resistance.
Description
Technical field:
The present invention relates to a kind of electroluminescence and show (electroluminescence; EL) device particularly relates to and a kind ofly has an electroluminescence element and as the electroluminescent display of a thin-film transistor of the switch element of this electroluminescence unit.
Background technology
In the traditional electroluminescent display as TFT-OLED, one of the electrode of electroluminescence (EL) element contacts the source electrode or the drain electrode of relevant TFT device via the contact hole in the protective layer of below.Section situation with the illustrated a kind of traditional TFT-OLED device of Fig. 1 is an example.This TFT-OLED device is owing to a TFT device 100 and the OLED device 200 in the substrate 10 constitutes.At this, substrate 10 for example is a semiconductor material, so is formed on the buffer insulation layer 11 and 12 that forms silicon nitride and silica material on the substrate 10 discriminably.Substrate 10 also can be glass, synthetic resin or homologue and forms.At this moment, buffer insulation layer 11 and 12 is not the rete for necessity.
The deposition as the active layers 102 of polysilicon membrane is at first passed through in the formation of TFT device 100.The outside of active layers 102 forms one source pole 102S, drain a 102D and a therebetween channel region 102C through suitably mixing the back.Then on active layers 102, deposit the gate oxidation insulating barrier 20 of a blanket property covered, to cover the remainder of active layers 102 and substrate 10.Then form gate electrode 120 on the gate oxidation insulating barrier 20 that directly is located on the channel region 102C, its material is generally chromium or molybdenum.Then, provide interlayer dielectric layer (ILD) 22 of a smooth property covered with covering grid electrode 120 and remaining gate oxidation insulating barrier 20.Interlayer dielectric layer 22 is generally silicon nitride or the silica material constitutes.By downward etching interlayer dielectric layer 22 with two insulating barriers such as gate oxide insulating barrier 20 grades to drain region 102D and source area 102S, to form interlayer hole 111 and 112.And in interlayer hole 111 and 112, insert metal respectively as aluminium, to form drain electrode 110D and source electrode 110S.Then on the whole surface that covers drain electrode 110D, source electrode 110S, form first protective layer 30, thereby finish the essential structure of TFT device 100.
Above-mentioned first protective layer 30 also is formed in order on the surface that forms OLED device 200.For forming OLED device 200, first protective layer 30 that at first is etched in source electrode 110S top is to form a contact hole 212 in it.The transparency electrode of the anode 210 of deposition formation OLED is in first protective layer, 30 surfaces that comprise contact hole 212, so that anode 210 electrically contacts source electrode 110S via contact hole 212.Anode 210 is made by transparent conductive material, is generally indium tin oxide (ITO).Then provide one second protective layer 32 being covered on the whole surface, and expose regional inner anode 210 to form an opening with respect to OLED device 200 places via this second protective layer 32 of etching.This opening defines the picture element in the formed display of array of each electroluminescent display thus, and organic electric-excitation luminescent layer 215 then is deposited on the anode 210 in the opening.Then provide one the 3rd protective layer 34 being covered on the whole surface, and expose to form an opening with respect to organic electric-excitation luminescent layer 215 in the zone at OLED device 200 places via this 3rd protective layer 34 of etching.At last, negative electrode 220 is generally aluminium material, then is deposited on the organic electric-excitation luminescent layer 215 and has formed this OLED structure.
When forming a suitable bias potential in 220 on anode 210 and negative electrode, electricity hole and electronics are injected from anode 210 and negative electrode 220 respectively, and in luminescent layer 215 again in conjunction with and make luminescent layer 215 emissions pass transparent anode 210 and substrate 10 as the energy of light.
In traditional electroluminescent display of as shown in Figure 1 traditional TFT-OLED structure, because the electrically contacting between between anode 210 and source electrode 110S of electroluminescence element is to finish via contact hole 212, because its structure is minimum, so have higher contact resistance.Generally speaking, the diameter of contact hole 212 is about the 5-10 micron, and its contact resistance between between aluminium and ITO is about 50 ohm usually.So high contact resistance needs bigger power to drive this electroluminescence element.Via improving contacting and reduce the power demand that its contact resistance can improve electroluminescent display between anode 210 and source electrode 110S.
Another problem in traditional generation electroluminescent display structure is that it is very difficult making the anode with desired flatness.Because the anode 210 of electroluminescence element is deposited on the insulating barrier of a plurality of lower floors, so the surface flatness of difficult control anode.The corresponding performance of electroluminescence element reliably, the flatness of anode 210 preferably need meet Rms＜10 dusts and Rpv＜100 dusts.
Therefore, need a kind of preferable electroluminescent display in the art technology.
Summary of the invention
One of main purpose of the present invention just provides a kind of thin-film transistor that is formed in regular turn on the substrate and electroluminescent display of an electroluminescence element of comprising.Above-mentioned electroluminescence element can be as a light-emitting diode of organic electric exciting light-emitting diode (OLED) and above-mentioned thin-film transistor is in order to drive the usefulness of this electroluminescence element.Aforesaid substrate is a transparency carrier and can be non-conductive material as glass, synthetic resin or its homologue etc.When substrate is constituted by semi-conducting material or electric conducting material, be formed at substrate at thin film transistor device and electro photo-luminescent apparatus and go forward, substrate will be protected by the insulating barrier of one or more silica or silicon nitride material.
The basic structure of above-mentioned thin-film transistor is same as illustrated traditional thin-film transistor among Fig. 1, and it comprises one source pole electrode, a drain electrode and a gate electrode.Yet, in one embodiment of this invention, gate oxidation insulating barrier and extend to interlayer dielectric layer in the electroluminescence element district and all be removed and make the anode of electroluminescence element directly to be deposited on the substrate.Before anodic deposition, at first deposit above-mentioned source electrode so its part also directly is arranged on the substrate.Perhaps, the part of source electrode also can be set directly on the substrate.
Above-mentioned electroluminescence element has a transparent anode layer, a cathode layer and be arranged at anode and cathode layer between an electroluminescence layer.Above-mentioned rete is directly to be arranged on the substrate with above-mentioned anode, at first forms the electroluminescence layer on anode, and negative electrode then is arranged on the above-mentioned electroluminescence layer.
Then, because the anode of electroluminescence element is formed on the substrate, makes that its part is partly overlapping and cover the part of the source electrode that directly is arranged at the thin-film transistor on the substrate.Anode contacting in overlapped zone by the source electrode of thin-film transistor and above-mentioned electroluminescence element is a feature structure of the present invention, do not have therebetween have any in the middle of rete.Form in the manufacture craft of thin-film transistor on substrate, the part of source electrode is directly to be deposited on the substrate.The anode of electroluminescence element then is deposited on the transistorized substrate of adjacent films, makes the edge part of its anode be overlapped in above-mentioned source electrode and covers the limit face of this source electrode.Above-mentioned anode touch the limit face of source electrode and end face and make between between anode and source electrode contact area than existing structure via the formed contact area of interlayer hole come big.Therefore, the contact resistance between anode and source electrode can reduce, and and then reduce the power demand of this electroluminescent display.In another embodiment of the present invention, the order of the anode of deposition electroluminescence element and the source electrode of thin-film transistor can be put upside down each other.The anode of electroluminescence element will be deposited on earlier on the substrate and then the transistorized source electrode of deposit film on substrate, on the anode of its part with overlapping electroluminescence element.
In another embodiment of the present invention, one of gate oxidation insulating barrier in the thin film transistor device and the interlayer dielectric layer intact below that is retained in electroluminescence element at least.The source electrode of thin-film transistor and the transparent anode of electroluminescence element are deposited on the surface of one of above-mentioned insulating barrier but not on the substrate.
Being familiar with this operator should know, the source electrode in the film crystal pipe electrode and the address of drain electrode can according to its electrically on function and exchanging.Negative electrode in electroluminescence element and anode address also are like this.Do not breaking away under the spirit of the present invention, above-mentioned address can change each other.Therefore, in another embodiment of the present invention, the transparent electrode layer of electroluminescence element can be a negative electrode and the aforesaid contact situation that overlaps each other will be formed between the source electrode of the negative electrode of electroluminescence element and thin-film transistor.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate institute's accompanying drawing to be described in detail below:
Description of drawings
Fig. 1 is a generalized section, in order to show a kind of traditional electroluminescent display;
Fig. 2 is a generalized section, in order to show according in one embodiment of the invention through improving electroluminescent display;
Fig. 3 is a generalized section, in order to show according in another embodiment of the present invention through improving electroluminescent display;
Fig. 4 is a generalized section, in order to show according to the contact area between the anode of source electrode that is positioned at thin-film transistor (TFT) in another embodiment of the present invention and electroluminescence unit.
Embodiment
Please refer to Fig. 2, disclosed a kind of according to one embodiment of the invention through improved electroluminescent display.Above-mentioned electroluminescent display has comprised a thin-film transistor (the thin-film transistor that is formed on the substrate 10; TFT) 100 ' and one electroluminescence element 200 '.Electroluminescence element in the present embodiment is by an Organic Light Emitting Diode and this electroluminescence element 200 ' is driven by thin-film transistor 100 '.Substrate 10 is by transparent and can be as non-conducting materials such as glass, synthetic resin or its homologues and formed.At this, also can serve as reasons conduction or semi-conducting material of substrate 10 forms, and on substrate 10 formation thin-film transistor 100 ' and electroluminescence element 200 ' before, substrate 10 is generally the insulating barrier of one or more silica and silicon nitride material and protects.
Thin-film transistor 100 ' in an embodiment of the present invention has and is same as the thin film transistor device structure in illustrated traditional electroluminescent display among Fig. 1.But; after deposition source electrode 110S on interlayer dielectric layer 22 and/drain electrode 110D; the anode 210 of electroluminescence element directly is deposited on the interlayer dielectric layer 22 but not covers a protective layer on thin-film transistor, so the anode 210 of the source electrode 110S of thin-film transistor and motor light-emitting component all is deposited on the interlayer dielectric layer 22.The transparent anode 210 that is generally the electroluminescence element of indium tin oxide (ITO) is deposited on the interlayer dielectric layer 22, and the edge part 213 of anode 210 is overlapped and hide the source electrode 110S that directly is deposited on the interlayer dielectric layer 22.Source electrode 110S has face 115 and an end face 116 direct anodes 210 that contact electroluminescence element on one side.In other words, anode 210 direct contact edge face 115 and end faces 116 do not have the existence of middle rete therebetween and contact area between this each face of maximizing.Be compared to shown in Fig. 1 in traditional electroluminescent display via contact hole 212 formed contact situations, be formed on the marginal zone 213 of anode and the contact situation of source electrode 110S and have bigger substantially contact area.Because bigger contact area, therefore be reduced to the contact resistance between the source electrode 110S of the anode 210 of electroluminescence element and thin-film transistor, and then meet the demand of lower-wattage.Though illustrate source electrode 110S in embodiments of the present invention with 116 liang of different surfaces of limit face 115 and end face, do not breaking away from outside the invention spirit of the present invention, can be according to the requirement of its specific purposes more to revise, the edge of source electrode 110S can have different surface morphology.
Then, deposit protective layer 30 that a blanket covers source electrode and drain electrode 110S, the 110D with cover film transistor 110, its material is generally silicon nitride.In a part of protective layer 30 parts 211 of back that remove above the anode 210 of electroluminescence element to expose anode 210.Luminescent layer 215 by the organic compound material and formed electroluminescence element 200 ' as the deposition of the cathode layer 220 of the opaque conductive material of aluminium.
Please refer to Fig. 3, disclosed according to the present invention another through improved electroluminescent display.In the present embodiment, gate oxidation insulating barrier 20 in the electroluminescence element region and interlayer dielectric layer 22 are removed, make electroluminescence element 200 can be formed directly on substrate 10 by suitable etching program.In the present embodiment, substrate 10 is the semiconductor material, so its surface will be respectively buffer insulation layer 11 and 12 insulation of silicon nitride and silica material.When substrate 10 is non-conducting material such as glass, buffer insulation layer 11 and 12 is with nonessential and electroluminescence element 200 can directly be formed on the substrate 10.
After gate oxidation insulating barrier on the substrate in electroluminescence element district 20 and interlayer dielectric layer 22 remove, then deposit source electrode 110S and drain electrode 110D.As shown in the figure, source electrode 110S is formed on source electrode 102S and upward and towards the electroluminescence element region extends, and extend downward the buffer insulation layer 12 that exposes, make the source electrode 110S of a part directly be deposited on (or on substrate 10, when not having the buffer insulation of use layer) on the buffer insulation layer 12.Then, the transparent anode 210 of electroluminescence element is deposited on the buffer insulation layer 12 on the substrate, and the edge part 213 of its anode 210 partially overlaps the part of the source electrode 110S that directly is seated on the buffer insulation layer 12.The edge part 213 of anode has covered the limit face 115 and end face 116 of source electrode.Therefore the contact situation of situation in can traditional electroluminescent display more as shown in Figure 1 that contact that is formed between anode 210 and source electrode 110S has lower contact resistance.
Then, with reference to the embodiment of the invention shown in Figure 2, deposit protective layer 30, luminescent layer 215 and negative electrode 220 in regular turn and formed thin-film transistor 100 ' and electroluminescence element 200 '.
In aforesaid different embodiments of the invention, it should be noted that the order of the anode 210 of transistorized source electrode 110S of deposit film and electroluminescence element can be put upside down each other.Final structure as shown in Figure 4, wherein anode 210 is to be deposited on the substrate 10 and marginal portion that source electrode 110S then is deposited on the anode 210 and has covered anode 210 earlier.
Though disclosed the present invention in conjunction with above preferred embodiment; yet it is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; can be used for a variety of modifications and variations, so protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (11)
1. electroluminescent display comprises:
One substrate;
One thin-film transistor is formed on this substrate, and this thin-film transistor comprises one source pole electrode, a drain electrode and a gate electrode, and wherein the part of one of this source electrode and this drain electrode directly is arranged on this substrate at least;
One electroluminescence element is formed on this substrate, and this electroluminescence element comprises:
One first electrode directly is arranged on this substrate;
One electroluminescence layer is arranged on this first electrode;
One second electrode is formed on this electroluminescence layer, makes this electroluminescence layer be arranged between this first electrode and this second electrode; And
Wherein the part of first electrode of this electroluminescence element is partly overlapping and this part that hides one of this source electrode at least directly be arranged on the substrate and this drain electrode.
2. electroluminescent display as claimed in claim 1, this part that wherein directly is arranged on one of this source electrode at least on this substrate and this drain electrode is a side and an end face that directly contacts first electrode of this electroluminescence element.
3. electroluminescent display as claimed in claim 1, wherein this electroluminescence element is an organic electric exciting light-emitting diode.
4. electroluminescent display as claimed in claim 1 wherein comprises at least one buffer insulation layer at this substrate surface that this thin-film transistor and this electroluminescence element are set.
5. electroluminescent display comprises:
One substrate;
One thin-film transistor is formed on this substrate, and this thin-film transistor comprises one source pole electrode, a drain electrode and a gate electrode, and wherein the part of one of this source electrode and this drain electrode directly is arranged on this substrate at least;
One electroluminescence element is formed on this substrate, and this electroluminescence element comprises:
One first electrode directly is arranged on this substrate;
One electroluminescence layer is arranged on this first electrode;
One second electrode is formed on this electroluminescence layer, makes this electroluminescence layer be arranged between this first electrode and this second electrode, to form this electroluminescence element; And
This part that wherein directly is arranged on one of this source electrode at least on this substrate and this drain electrode is to overlap and hide first electrode of this electroluminescence element.
6. electroluminescent display as claimed in claim 5, wherein first electrode of this electroluminescence element has a side and an end face and contacts this part that this directly is arranged on one of this source electrode at least on the substrate and this drain electrode.
7. electroluminescent display as claimed in claim 5, wherein this electroluminescence element is an organic electric exciting light-emitting diode.
8. electroluminescent display as claimed in claim 5 wherein comprises at least one buffer insulation layer at this substrate surface that this thin-film transistor and this electroluminescence element are set.
9. electroluminescent display comprises:
One substrate;
One thin-film transistor, be formed on this substrate, this thin-film transistor comprises one source pole electrode, a drain electrode and a gate electrode, and wherein the part of one of this source electrode and this drain electrode directly is set in place on the insulating barrier on this substrate at least;
One electroluminescence element is formed on this substrate, and this electroluminescence element comprises:
One first electrode directly is arranged on this insulating barrier;
One electroluminescence layer is arranged on this first electrode;
One second electrode is formed on this electroluminescence layer, makes this electroluminescence layer be arranged between this first electrode and this second electrode; And
Wherein directly this is arranged at this part of one of this source electrode at least on the insulating barrier and this drain electrode for the part of first electrode of this electroluminescence element contact.
10. electroluminescent display as claimed in claim 9, wherein this insulating barrier is at this suprabasil buffer insulation layer, a gate oxidation insulating barrier or an interlayer dielectric layer.
11. electroluminescent display as claimed in claim 9, wherein this this part that directly is arranged at one of this source electrode at least on the insulating barrier and this drain electrode has a side and an end face of first electrode that directly contacts this electroluminescence element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/674,713 US6850000B1 (en) | 2003-09-30 | 2003-09-30 | Thin film transistor organic light emitting diode structure |
| US10/674,713 | 2003-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1553751A true CN1553751A (en) | 2004-12-08 |
Family
ID=34080800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100597038A Pending CN1553751A (en) | 2003-09-30 | 2004-06-17 | Electroluminescent display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6850000B1 (en) |
| JP (1) | JP2005107492A (en) |
| CN (1) | CN1553751A (en) |
| TW (1) | TW200513140A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882485A (en) * | 2015-03-30 | 2015-09-02 | 深超光电（深圳）有限公司 | Thin film transistor and manufacturing method thereof |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100615211B1 (en) * | 2004-02-26 | 2006-08-25 | 삼성에스디아이 주식회사 | Organic electro-luminescence display device and method for fabricating thereof |
| US7211456B2 (en) * | 2004-07-09 | 2007-05-01 | Au Optronics Corporation | Method for electro-luminescent display fabrication |
| US8390537B2 (en) * | 2005-03-11 | 2013-03-05 | The Invention Science Fund I, Llc | Method of assembling displays on substrates |
| US8860635B2 (en) * | 2005-04-04 | 2014-10-14 | The Invention Science Fund I, Llc | Self assembling display with substrate |
| US20060202944A1 (en) | 2005-03-11 | 2006-09-14 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Elements for self assembling displays |
| US7977130B2 (en) | 2006-08-03 | 2011-07-12 | The Invention Science Fund I, Llc | Method of assembling displays on substrates |
| US8711063B2 (en) | 2005-03-11 | 2014-04-29 | The Invention Science Fund I, Llc | Self assembly of elements for displays |
| US9153163B2 (en) | 2005-03-11 | 2015-10-06 | The Invention Science Fund I, Llc | Self assembly of elements for displays |
| US7662008B2 (en) * | 2005-04-04 | 2010-02-16 | Searete Llc | Method of assembling displays on substrates |
| US8300007B2 (en) * | 2005-03-11 | 2012-10-30 | The Invention Science Fund I, Llc | Self assembling display with substrate |
| US8334819B2 (en) * | 2005-03-11 | 2012-12-18 | The Invention Science Fund I, Llc | Superimposed displays |
| US7990349B2 (en) * | 2005-04-22 | 2011-08-02 | The Invention Science Fund I, Llc | Superimposed displays |
| TWI308805B (en) * | 2006-09-22 | 2009-04-11 | Innolux Display Corp | Active matrix oled and fabricating method incorporating the same |
| TWI317556B (en) * | 2006-11-10 | 2009-11-21 | Innolux Display Corp | Top emission type oled and method for fabricating same |
| KR20100105673A (en) * | 2007-12-14 | 2010-09-29 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Backplane structures for electronic devices |
| US20110058770A1 (en) * | 2009-09-10 | 2011-03-10 | E. I. Du Pont De Nemours And Company | Sub-surface engraving of oled substrates for improved optical outcoupling |
| JP5515660B2 (en) * | 2009-11-13 | 2014-06-11 | セイコーエプソン株式会社 | Manufacturing method of substrate for semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
| US5994836A (en) | 1998-02-02 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | Organic light emitting diode (OLED) structure and method of making same |
| JP2000260571A (en) | 1999-03-11 | 2000-09-22 | Sanyo Electric Co Ltd | Electroluminescence display device |
| TW442979B (en) | 2000-04-28 | 2001-06-23 | Unipac Optoelectronics Corp | Manufacturing method of thin-film transistor |
| TW463393B (en) * | 2000-08-25 | 2001-11-11 | Ind Tech Res Inst | Structure of organic light emitting diode display |
-
2003
- 2003-09-30 US US10/674,713 patent/US6850000B1/en not_active Expired - Lifetime
-
2004
- 2004-05-26 TW TW093114911A patent/TW200513140A/en unknown
- 2004-06-17 CN CNA2004100597038A patent/CN1553751A/en active Pending
- 2004-07-12 JP JP2004204133A patent/JP2005107492A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882485A (en) * | 2015-03-30 | 2015-09-02 | 深超光电（深圳）有限公司 | Thin film transistor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US6850000B1 (en) | 2005-02-01 |
| JP2005107492A (en) | 2005-04-21 |
| TW200513140A (en) | 2005-04-01 |
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