CN1536945A - Active matrix organic electro-excited light-emitting display component and its making method - Google Patents
Active matrix organic electro-excited light-emitting display component and its making method Download PDFInfo
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Abstract
The invention provides a manufacturing method for a kind of active matrix organic electric igniting brightening and displaying component. The method forms a transparent conductor layer as the public positive electrode of the displaying component on the base board. Following, there forms a protection layer on the transparent conductor layer, forms a two or more film transistors on the protection layer in order to form a film transistor group. There forms several gaps on the protection layer in order to expose the transparent conductor layer on image element area, and forms two or more organic brightening material layer on the transparent conductor layer in the gaps. A metal electrode layer is formed on the organic brightening material layer, and the electrodes connect with the draw electrode.
Description
Technical field
The present invention is relevant to a kind of display module and manufacture method thereof, and particularly relevant to a kind of active-matrix formula organic electric-excitation luminescent display module and manufacture method thereof.
Background technology
The organic electro-luminescent display LCD of comparing, owing to do not needing backlight of additional configuration, and still with the frivolous portative advantage of LCD, on market, come into one's own gradually in recent years.General organic electro-luminescent display mainly can be divided into active-matrix formula and simple matrix formula two major types, and with active-matrix formula organic electric-excitation luminescent display module, it has can be luminous continuously and advantage such as low voltage drive.
In active-matrix formula organic electric-excitation luminescent display module, with amorphous silicon (amorphous silicon, a-Si) thin-film transistor (the Thin Film Transistor that comes out of made, TFT) has cheap advantage, and the manufacturing of this kind amorphous silicon is good owing to uniformity, more favourable manufacturing at large size panel.But, the thin-film transistor of amorphous silicon is by in the restriction that is subjected to the material characteristic, so the thin-film transistor of making all is to belong to the N type, the thin-film transistor of this kind kenel has the restriction that circuit connects, wherein a kind of docked mode is with the source electrode of thin-film transistor and the anode series of organic electric exciting light-emitting diode, but when the cross-pressure of this kind docked mode in the organic electric-excitation luminescent display module changed, the voltage on the source electrode will influence the size of current on the thin-film transistor and cause the electric current instability.As for another docked mode then is that drain of film transistor is connected in series with the negative electrode of organic electric exciting light-emitting diode, and so the electric current on the thin-film transistor will can not be subjected to the influence of voltage on the drain.
In order to reach the electrical purpose of connecting of above-mentioned negative electrode with drain of film transistor and organic electric exciting light-emitting diode; please refer to Fig. 1; at first be with by gate 102; lock insulating barrier 104; channel layer 106; source electrode 108a; the thin-film transistor 110 that drain 108b is constituted is formed on the substrate 100; then on substrate 100, form protective layer 112; then; on protective layer 112, form via the metal electrode layer 116 (that is negative electrode of organic electric exciting light-emitting diode) of opening 114 with drain 108b electric connection; on metal electrode layer 116, form again by electron transfer layer 118; organic luminous layer 120; electricity hole transport layer 122; 124 of electricity hole implanted layers storehouse in regular turn form organic luminous material layer 126, form transparent conductor layers 128 (that is anode of organic electric exciting light-emitting diode) at luminous organic material layer 126 more at last.
Yet, if adopt the organic electric-excitation luminescent display module of Fig. 1, will have following problem:
In general, organic electric exciting light-emitting diode is the order institute storehouse formation with transparent conductor layer, electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer and metal electrode layer, and wherein the normal material that uses of electron transfer layer is Tri (8-Quinolinolato-N108) Aluminum (being abbreviated as Alq3), and the material of metal electrode layer is then more often used the composite bed of lithium fluoride and aluminium.Behind the lithium fluoride of Alq3 that forms electron transfer layer and metal electrode layer; usually can carry out the deposition of the aluminium of metal electrode layer in the mode of sputter; the required energy of sputter this moment can be squeezed into the lithium in the lithium fluoride in the electron transfer layer; and forming bond with Alq3 in the electron transfer layer, such mechanism has and strengthens the effect that electronics injects.
But, if for the negative electrode that makes drain of film transistor and organic electric exciting light-emitting diode electrically connects, and formation structure as shown in Figure 1, then metal electrode layer wherein is to be formed at electron transfer layer earlier, therefore the effect that the above-mentioned energy that utilizes sputter is squeezed into electron transfer layer with metal will not exist, thereby make the luminous efficiency in the organic electric-excitation luminescent display module reduce.
In order to solve the problem that luminous display assembly and manufacture method thereof exist, relevant manufacturer there's no one who doesn't or isn't seeks the road that solves painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
This shows that above-mentioned existing luminous display assembly and manufacture method thereof still have many defectives, and demand urgently further being improved.
The defective of mirror in above-mentioned existing luminous display assembly and manufacture method existence thereof arranged, inventor's base is in abundant practical experience and professional knowledge, the utmost point is studied innovation, through constantly study, design make sample and improve after, creating the utility model that has practical value eventually.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of active-matrix formula organic electric-excitation luminescent display module and manufacture method thereof, make the negative electrode of organic electric exciting light-emitting diode be serially connected in drain of film transistor, voltage is to the influence of the electric current on thin-film transistor when changing with the cross-pressure that reduces display module.
Another object of the present invention provides a kind of active-matrix formula organic electric-excitation luminescent display module and manufacture method thereof, make metal electrode layer be configured in luminous organic material layer top, this when being configured in the metal sputtering that carries out metal electrode layer, the metal of trace can enter in the electron transfer layer, and strengthens the efficient that electronics injects.
A further object of the present invention provides a kind of active-matrix formula organic electric-excitation luminescent display module and manufacture method thereof, and the preceding layer of transparent conductive layer that covers earlier that becomes thin-film transistor is above whole base plate, and this transparency conducting layer will be as the common anode of this display module.
Technical problem underlying to be solved is to make it at first form transparent conductor layer with the common anode as display module on substrate.Then, on transparent conductor layer, form layer protective layer.Afterwards, on protective layer, form an above thin-film transistor to form a thin-film transistor array.Then, protective layer form one with upper shed to expose the transparent conductor layer of pixel region, form an above luminous organic material layer then on the transparent conductor layer in opening.Afterwards, on these luminous organic material layers, form metal electrode layer, and being electrically connected of these metal electrode layers and pairing drain.
The present invention proposes a kind of manufacture method of active-matrix formula organic electric-excitation luminescent display module; the method at first is to form a transparent conductor layer with the common anode as all organic electric exciting light-emitting diodes on a substrate; on transparent conductor layer, form a protective layer again; then on protective layer, formed one with last gate; on these gates, form a lock insulating barrier again; in gate insulation layer and protective layer, form thereafter one with last opening to expose transparent conductor layer; and these openings form a pixel region; on the lock insulating barrier above the gate, form a channel layer afterwards; on this channel layer, form a source electrode and a drain again to form one with last thin-film transistor; the luminous organic material layer of formation in these openings that continues; on these luminous organic material layers, form a metal electrode layer of display frame again; wherein these metal electrode layers are the negative electrodes as organic electric exciting light-emitting diode, and the individual drain that is electrically connected to correspondence.
The present invention proposes a kind of active-matrix formula organic electric-excitation luminescent display module, and this assembly comprises that a substrate, transparent conductor layer, a protective layer, above thin-film transistor, above luminous organic material layer and one are with last metal electrode layer.Wherein transparent conductor layer is to be configured on the substrate with the common anode as all organic electric exciting light-emitting diodes; sheath is to be configured on the transparent conductor layer; wherein this protective layer have one with last opening to expose transparent conductor layer; and these openings are to form a pixel region; thin-film transistor is these openings of correspondence and being configured on the protective layer to constitute a thin-film transistor array; wherein each thin-film transistor has a gate at least; an one source pole and a drain; the luminous organic material layer is on the transparent conductor layer that is configured in the corresponding opening; and metal electrode layer is to be configured on the corresponding luminous organic material layer with the negative electrode as organic electric exciting light-emitting diode, and metal electrode layer is to electrically connect corresponding drain.
The present invention proposes another kind of active-matrix formula organic electric-excitation luminescent display module, this organic electric-excitation luminescent display module comprise a substrate, a metal level, a protective layer, one with last thin-film transistor, one with last transparent conductor layer, one with last luminous organic material layer and one with last metal electrode layer.Wherein, metal level is to be configured on the substrate; protective layer is to be configured on the metal level; wherein in protective layer and metal level, have one with last opening to expose substrate; and these openings are to form a pixel region; corresponding these openings of thin-film transistor are configured on the protective layer to constitute a thin-film transistor array; in each thin-film transistor have a gate at least; an one source pole and a drain; transparent conductor layer is configured on the substrate in the corresponding opening; the luminous organic material layer is configured on the transparent conductor layer in the corresponding opening; and the metal gate layer is configured on the corresponding organic light-emitting diodes material layer with the negative electrode as organic electric exciting light-emitting diode, and the metal gate layer electrically connects corresponding drain.And metal level and transparent electrode layer are the common anodes as all organic electric exciting light-emitting diodes.
In the manufacture method and modular construction of above-mentioned active-matrix formula organic electric-excitation luminescent display module, wherein the luminous organic material layer is to be with the order of electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer institute storehouse and forming in regular turn with the luminous organic material layer.Even being the mode by sputter, metal electrode layer is formed on the electron transfer layer.
In the manufacture method and modular construction of above-mentioned active-matrix formula organic electric-excitation luminescent display module; also can form another protective layer on the thin-film transistor; the formation step of this protective layer is carried out after finishing thin-film transistor; and before the formation metal electrode layer; forming this protective layer can prevent when forming the metal electrode layer of display frame; by make metal electrode layer that source electrode, drain are electrically connected, and then cause short circuit at alignment error.
In active-matrix formula organic electric-excitation luminescent display module of the present invention, by the negative electrode at organic electric exciting light-emitting diode is to be serially connected in drain of film transistor, therefore the size of current of the cross-pressure influence of change of organic electric exciting light-emitting diode can be reduced, thereby the stability of the electric current of thin-film transistor can be kept to thin-film transistor.
In addition, in organic electric-excitation luminescent display module of the present invention and its manufacture method, organic electric exciting light-emitting diode can form with the order institute storehouse of transparent conductor layer, electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer and metal electrode layer, therefore when carrying out the metal sputtering manufacture process of metal electrode layer, the metal of trace can enter in the electron transfer layer and strengthen the efficient that electronics injects, and then makes display module have good luminous efficacy.
In addition, dispose the common anode of another kind of form, the common anode of this kind is that the pixel region above substrate is to adopt transparency conducting layer, and other zone metal level above substrate, and anode is made of jointly transparency conducting layer and conductive layer area altogether, therefore can make the organic electric-excitation luminescent display module is for to the luminous form in bottom surface (substrate), can utilize the low-impedance character of metal level to strengthen conductive effect between the organic electric-excitation luminescent display module again.
The purpose of this utility model and solve its technical problem underlying and realize by the following technical solutions.
According to what the utility model proposes; A substrate, a transparent conductor layer is configured on this substrate; A protective layer is configured on this transparent conductor layer; Wherein this protective layer have one with last opening exposing this transparent conductor layer, and this opening forms a pixel region; An above thin-film transistor, corresponding these openings and being configured on this protective layer to form a thin-film transistor array, wherein each thin-film transistor has a gate, one source pole and a drain at least; An above luminous organic material layer is configured on this transparent conductor layer in those openings; And an above metal electrode layer, be configured on these luminous organic material layers, and those metal electrode layers electrically connect these drains.
The purpose of this utility model and solve its technical problem and can also adopt following technical measures further to realize.
Aforesaid active-matrix formula organic electric-excitation luminescent display module and manufacture method thereof, it is order institute stack arrangement with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer that some luminous organic material layers are wherein arranged.Active-matrix formula organic electric-excitation luminescent display module wherein has one second protective layer, is configured on this thin-film transistor.Wherein the material of this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.Wherein the material of this metal electrode layer comprises the composite bed of lithium fluoride and aluminium.Described active-matrix formula organic electric-excitation luminescent display module comprises a substrate; A metal level is configured on this substrate; One protective layer is configured on this metal level, wherein in this protective layer and this metal level, have one with upper shed exposing this substrate, and those openings form corresponding pixel region; An above thin-film transistor, corresponding opening dispose on this protective layer to constitute a thin-film transistor array, and wherein each thin-film transistor has a gate, one source pole and a drain at least; One with last transparent conductor layer, on this substrate that is configured in these openings; One with last luminous organic material layer, on the transparent conductor layer that is configured in these openings; And an above metal electrode layer, one is configured on these organic light-emitting diodes material layers, and those drains of the electric connection of this metal electrode layer.Wherein each luminous organic material layer is the order institute stack arrangement with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer.Wherein have one second protective layer, be configured on this thin-film transistor.Wherein the material of this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.Wherein the material of these second metal levels comprises the composite bed of lithium fluoride and aluminium.
A kind of method of making active-matrix formula organic electric-excitation luminescent display module, this method comprise the following steps: to form a transparent conductor layer on a substrate; On this transparent conductor layer, form one first protective layer; On this first protective layer, formed one with last gate; On those gates, form a lock insulating barrier; In gate insulation layer and this first protective layer, form one with last opening exposing this transparent conductor layer, and those openings form a pixel region; On this lock insulating barrier above this gate, form a channel layer; On those channel layers, form a source electrode and a drain; In those openings, form a luminous organic material layer; And at a metal electrode layer of the last formation display frame of those luminous organic material layers, wherein this metal electrode layer is to be electrically connected to those drains.Wherein each luminous organic material layer is the order institute storehouse formation with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer.Wherein on this first protective layer, form one with last thin-film transistor after; and before forming this metal level of display frame on this luminous organic material layer; more be included in and form one second protective layer on this thin-film transistor, and this second protective layer is to expose this drain of part.The material of wherein said this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.Wherein the material of those metal electrode layers comprises the composite bed of a lithium fluoride and an aluminum metal.Wherein the formation method of this aluminum metal in this metal electrode layer comprises sputtering method.On a substrate, form a transparent conductor layer; On this transparent conductor layer, form one first protective layer; On this first protective layer, formed one with last thin-film transistor; Form in this first protective layer one with upper shed exposing this transparent conductor layer, and those openings form a pixel region; In those openings, form a luminous organic material layer; And at a metal electrode layer of the last formation display frame of those luminous organic material layers, wherein those metal electrode layers are electrically connected to a drain of those thin-film transistors.Wherein comprise: on this first protective layer, formed one with last gate in the step that forms this thin-film transistor on this first protective layer; On this gate, form a lock insulating barrier; On this lock insulating barrier above this gate, form a channel layer; And on these channel layers, form a source electrode and this drain.Wherein this opening is formed in this lock insulating barrier and this first protective layer simultaneously to expose this transparent conductor layer.
The utility model compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known,
1. the negative electrode of organic electric-excitation luminescent display module of the present invention is serially connected in drain of film transistor, therefore the size of current of the cross-pressure influence of change thin-film transistor of organic electric exciting light-emitting diode can be reduced, thereby the stability of the electric current of thin-film transistor can be kept.
2. in organic electric-excitation luminescent display module of the present invention and its manufacture method, because organic electric exciting light-emitting diode is to form with the order institute storehouse of transparent conductor layer, electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer and metal electrode layer, therefore when carrying out the metal sputtering processing procedure of metal electrode layer, the metal of trace can enter in the electron transfer layer and strengthen the efficient that electronics injects, and then makes display module have good luminous efficacy.
3. the present invention is the common anode of the another kind of form of configuration, this kind pixel region of anode above substrate altogether is to adopt transparency conducting layer, and metal level is adopted in other zone above substrate, and anode is made of jointly transparency conducting layer and conductive layer area altogether, therefore can make the organic electric-excitation luminescent display module for to the luminous form in bottom surface (substrate), can utilize the low-impedance character of metal level to strengthen conductive effect between the organic electric-excitation luminescent display module again.
In sum, dynamo-electric exciting light display module and its manufacture method of the utility model special construction, have above-mentioned many advantages and practical value, and in like product, there is no similar structural design and published or use,, and had large improvement technically no matter it structurally or bigger improvement is all arranged on the function, and produced handy and practical effect, and have the effect of enhancement really, thus fit more in practicality, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, below with preferred embodiment of the present utility model and conjunction with figs. describe in detail as after.
Embodiment of the present utility model is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Fig. 1 illustrate is the generalized section of known a kind of active-matrix formula organic electric-excitation luminescent display module.
Fig. 2 to Fig. 7 illustrate is the manufacturing process generalized section according to a kind of active-matrix formula organic electric-excitation luminescent display module of a preferred embodiment of the present invention.
Fig. 8 illustrate is the generalized section according to a kind of organic electric-excitation luminescent display module of another preferred embodiment of the present invention.
Fig. 9 illustrate is the generalized section according to a kind of organic electric-excitation luminescent display module of the another preferred embodiment of the present invention.
Figure 10 illustrate is into according to the present invention's generalized section of a kind of organic electric-excitation luminescent display module of a preferred embodiment again.
Graphic description of symbols:
100,200: substrate 102,202: gate
104,204: gate insulation layer 106,206: channel layer
108a, 208a: source electrode 108b, 208b: drain
110,210: thin-film transistor 112,230,234: protective layer
114,232,238: opening 116,216: metal electrode layer
118,218: electron transfer layer 120,220: organic luminous layer
122,222: electric hole transport layer (hole transport layer)
124,224: electric hole implanted layer
126,226: luminous organic material layer 128,228: transparent conductor layer
236: metal level
The graphic description of symbols of Fig. 7 is expressed as follows in detail
200: substrate 202: gate
204: gate insulation layer 206: channel layer
208a: source electrode 208b: drain
210: thin-film transistor 216: metal electrode layer
226: the luminous organic material layer
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to its embodiment, structure, feature and the effect thereof that foundation the utility model active-matrix formula organic light emitting display assembly and manufacture method thereof propose, describe in detail as after.
Fig. 2 to Fig. 7 illustrate is the manufacturing process generalized section according to a kind of active-matrix formula organic electric-excitation luminescent display module of a preferred embodiment of the present invention.Generally speaking, be to be an arranged on substrate on an organic electric-excitation luminescent displaying panel by most organic electric-excitation luminescent display modules, yet, be only to show the processing procedure of an organic electric-excitation luminescent display module of manufacturing in Fig. 2 to the Fig. 7 to explain for asking for simplicity.
Please refer to Fig. 2, substrate 200 at first is provided, this substrate 200 can be glass substrate or plastic base.Then, on substrate 200, form transparent conductor layer 228 with common anode as all organic electric-excitation luminescent display modules, wherein, the method that forms transparent conductor layer 228 for example is a sputtering method, and the material of this transparent conductor layer 228 can be indium tin oxide (ITO) or indium-zinc oxide (IZO).Then; on transparent conductor layer 228, form comprehensive protective layer 230; wherein the material of this protective layer 230 can be a silicon nitride, and the method for its formation can be electric pulp vapour deposition process, and this protective layer 230 is in order to intercept other rete of transparent conductor layer 228 and follow-up formation.
Please refer to Fig. 3; on protective layer 230, form gate 202; wherein the material of gate 202 can be chromium (Cr), tungsten (W), (Ta), titanium (Ti), molybdenum (Mo), aluminium (Al) or alloy; the method that forms this gate 202 is to form metal level (not illustrating) on protective layer 230, and then this metal level of display frame is to define gate 202.Afterwards, form comprehensive gate insulation layer 204 to cover gate 202 and protective layer 230 above these gates 202, the material that wherein forms gate insulation layer 204 is a silicon nitride, and the method for its formation is electric pulp vapour deposition process.
Please refer to Fig. 4, in gate insulation layer 204 and protective layer 230, form opening 232 exposing transparent conductor layer 228 surfaces, and this opening 232 is corresponding pixel regions.On the gate insulation layer above the gate 202 204, form channel layer 206, wherein more can form ohmic contact layer (not illustrating) on the surface of channel layer 206, the material of this channel layer 206 is amorphous silicon (a-Si), and the material of ohmic contact layer then is through doped amorphous silicon (n+-Si).
Please refer to Fig. 5, on channel layer 206, form source electrode 208a and drain 208b, and channel layer 206 thickness are partly removed.More than formed gate 202, lock insulating barrier 204, channel layer 206 and source electrode 208a/ drain 208b constitute thin-film transistor 210.
Please refer to Fig. 6, in opening 232, form organic luminous material layer 226.This organic luminous layer 226 for example be with the order of electric hole implanted layer 224, electric hole transport layer 222, organic luminous layer 220 and electron transfer layer 218 in regular turn storehouse formed, wherein, the material of electricity hole transport layer 222 can be the aromatic amine based compound, the material of organic luminous layer 220 can be the luminescent materials that the metal misfit thing luminescent material that is or fluorescent pigment are, and the material of electron transfer layer 218 can be Alq3.
Please refer to Fig. 7, above luminous organic material layer 226, form the metal electrode layer 216 of pixel, the material of metal electrode layer 216 can be aluminium and lithium fluoride the common composite bed that forms, the method of its formation for example is the method formation lithium fluoride layer (not illustrating) with sputter or evaporation, mode with sputter forms aluminum metal layer (not illustrating) to constitute complex metal layer (not illustrating) on the lithium fluoride layer again, can be to form metal electrode layer 216 then with this complex metal layer of shadow mask curtain (Shadow Mask) display frame, in order to the negative electrode as the organic electric-excitation luminescent display module, and metal electrode layer 216 is to be connected with pairing drain 208b.
What deserves to be mentioned is, this execution mode is when carrying out the sputter process of aluminum metal layer, utilize the energy of sputter can impel the metal (lithium) in the metal electrode layer 216 to enter in the electron transfer layer 218, and mutually combine with material (Alq3) in the electron transfer layer 216, with the usefulness of enhancement electronics injection, and make the organic electric-excitation luminescent display module have good illumination efficiency.
With reference to Fig. 7, so that the structure of organic electric-excitation luminescent display module of the present invention to be described.Same, for asking for simplicity, be only to illustrate an organic electric-excitation luminescent display module in Fig. 7 to explain.This organic electric-excitation luminescent display module comprises a substrate 200, a transparent conductor layer 228, a protective layer 230, a thin-film transistor 210, a luminous organic material layer 226 and a metal electrode layer 216.
Wherein, transparent conductor layer 228 is configured on the substrate 200, and transparent conductor layer 228 is in order to the anode as organic electric exciting light-emitting diode, and its material can be indium tin oxide (ITO) or indium-zinc oxide (IZO).In addition, protective layer 230 is configured in transparent conductor 228 tops, wherein has the transparent conductor layer 228 of opening 232 to expose pixel region on the protective layer 230.In addition; thin-film transistor 210 is configured in protective layer 230 tops; wherein this thin-film transistor 210 comprises a gate 202, a lock insulating barrier 204, a channel layer 206 and one source pole 208a/ drain 208b at least, and luminous organic material layer 226 is configured on the transparency conducting layer 228 in the opening 232.In addition, the metal electrode layer 216 of display frame be configured in luminous organic material layer 226 on, this metal electrode layer 216 is as the negative electrode of display module, and with being electrical connected of drain 208b, wherein the material of this metal electrode layer 216 for example is aluminium and the formed complex metal layer of lithium fluoride.
What is particularly worth mentioning is that, at the preceding transparency conducting layer 228 that covers substrate 200 of thin-film transistor 210 configurations, be the common anode that can be used as all organic electric exciting light-emitting diodes on the substrate 200.In addition, this execution mode can be serially connected in the negative electrode of organic electric exciting light-emitting diode the drain 208b of thin-film transistor 210, can reduce the size of current of the cross-pressure influence of change of organic electric exciting light-emitting diode to thin-film transistor, thereby can keep the stability of the electric current of thin-film transistor, so this assembly can have preferable luminous efficacy.
Except above-mentioned preferred embodiment, the present invention still has other embodiment.Fig. 8 illustrate is the generalized section of a kind of organic electric-excitation luminescent display module of another preferred embodiment of the present invention.This organic electric-excitation luminescent display module comprises a substrate 200, a metal level 236, a protective layer 230, a transparent conductor layer 228, a thin-film transistor 210, a luminous organic material layer 226 and a metal electrode layer 216.
Wherein, metal level 236 is configured on the substrate 200 segment anode as organic electric exciting light-emitting diode, the material of metal level 236 for example is the metal with Low ESR character, in addition, in metal level 236, has opening 238, in opening 238, dispose transparent conductor layer 228, and 228 of this transparent conductor layers are on substrate 200,228 common anodes of metal level 236 that is wherein disposed and transparent conductor layer as display module.In addition, protective layer 230 is configured in transparent conductor layer 228 and metal level 236 tops, wherein has another opening 232 on the protective layer 230 to expose transparent conductor layer 228.In addition; thin-film transistor 210 is configured in protective layer 230 tops; wherein this thin-film transistor 210 is with gate 202, gate insulation layer 204, channel layer 206 and source electrode 208a/ drain 208b stack arrangement in regular turn; and luminous organic material layer 226 and metal electrode layer 216 be configured in regular turn transparency conducting layer 228 in the opening 232 on, metal electrode layer 216 wherein is electrically connected with drain 208b.
What deserves to be mentioned is, by on substrate 200, disposing metal level 236 and transparent conductor layer 228 jointly to form common anode, this common anode is can possess original light transmission with luminous to panel for transparent conductor layer 228 at pixel region, but also can increase the conductivity of inter-module by the configuration of metal level 236.
And, in the assembly manufacture method and modular construction of foregoing invention, also can on thin-film transistor, form another protective layer, as Fig. 9 and shown in Figure 10.The formation step of this protective layer 234 is carried out after finishing thin-film transistor 210, and form metal electrode layer 216 before, so this protective layer 234 can be formed on thin-film transistor 210 and metal electrode layer 216 between.Forming the purpose of this protective layer 234, is in order to prevent when forming the metal electrode layer 216 of display frame, is made metal electrode layer 216 that source electrode 208a and drain 208b are electrically connected by the error on aiming at and causes short circuit.
In the preferred embodiment of the invention described above, thin-film transistor wherein is to explain with end lock formula thin-film transistor, yet the present invention is not limited to this, and the present invention can also adopt low temperature polycrystalline silicon top lock formula thin-film transistor to replace end lock formula thin-film transistor and manufacture process thereof.
The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, every foundation technical spirit of the present utility model all still belongs in the scope of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did.
Claims (19)
1. active-matrix formula organic electric-excitation luminescent display module is characterized in that comprising: a substrate, and a transparent conductor layer is configured on this substrate; A protective layer is configured on this transparent conductor layer; Wherein this protective layer have one with last opening exposing this transparent conductor layer, and this opening forms a pixel region; An above thin-film transistor, corresponding these openings and being configured on this protective layer to form a thin-film transistor array, wherein each thin-film transistor has a gate, one source pole and a drain at least; An above luminous organic material layer is configured on this transparent conductor layer in those openings; And an above metal electrode layer, be configured on these luminous organic material layers, and those metal electrode layers electrically connect these drains.
2. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; It is order institute stack arrangement with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer that some luminous organic material layers are wherein arranged.
3. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; Wherein have one second protective layer, be configured on this thin-film transistor.
4. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; Wherein the material of this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.
5. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; Wherein the material of this metal electrode layer comprises the composite bed of lithium fluoride and aluminium.
6. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; Comprise a substrate; A metal level is configured on this substrate; One protective layer is configured on this metal level, wherein in this protective layer and this metal level, have one with upper shed exposing this substrate, and those openings form corresponding pixel region; An above thin-film transistor, corresponding opening dispose on this protective layer to constitute a thin-film transistor array, and wherein each thin-film transistor has a gate, one source pole and a drain at least; One with last transparent conductor layer, on this substrate that is configured in these openings; One with last luminous organic material layer, on the transparent conductor layer that is configured in these openings; And an above metal electrode layer, one is configured on these organic light-emitting diodes material layers, and those drains of the electric connection of this metal electrode layer.
7. active-matrix formula organic electric-excitation luminescent display module according to claim 6 is characterized in that; Wherein each luminous organic material layer is the order institute stack arrangement with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer.
8. active-matrix formula organic electric-excitation luminescent display module according to claim 6 is characterized in that; Wherein have one second protective layer, be configured on this thin-film transistor.
9. active-matrix formula organic electric-excitation luminescent display module according to claim 6 is characterized in that; Wherein the material of this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.
10. active-matrix formula organic electric-excitation luminescent display module according to claim 6 is characterized in that; Wherein the material of these second metal levels comprises the composite bed of lithium fluoride and aluminium.
11. active-matrix formula organic electric-excitation luminescent display module according to claim 1 is characterized in that; A kind of method of making active-matrix formula organic electric-excitation luminescent display module, this method comprise the following steps: to form a transparent conductor layer on a substrate; On this transparent conductor layer, form one first protective layer; On this first protective layer, formed one with last gate; On those gates, form a lock insulating barrier; In gate insulation layer and this first protective layer, form one with last opening exposing this transparent conductor layer, and those openings form a pixel region; On this lock insulating barrier above this gate, form a channel layer; On those channel layers, form a source electrode and a drain; In those openings, form a luminous organic material layer; And at a metal electrode layer of the last formation display frame of those luminous organic material layers, wherein this metal electrode layer is to be electrically connected to those drains.
12. method according to claim 11; It is characterized in that; Wherein each luminous organic material layer is the order institute storehouse formation with electric hole implanted layer, electric hole transport layer, organic luminous layer, electron transfer layer.
13. method according to claim 11 is characterized in that; Wherein on this first protective layer, form one with last thin-film transistor after; and before forming this metal level of display frame on this luminous organic material layer; more be included in and form one second protective layer on this thin-film transistor, and this second protective layer is to expose this drain of part.
14. method according to claim 11 is characterized in that; The material of wherein said this transparent conductor layer comprises indium tin oxide or indium-zinc oxide.
15. method according to claim 11 is characterized in that; Wherein the material of those metal electrode layers comprises the composite bed of a lithium fluoride and an aluminum metal.
16. method according to claim 15 is characterized in that; Wherein the formation method of this aluminum metal in this metal electrode layer comprises sputtering method.
17. method according to claim 11 is characterized in that this method comprises the following steps: to form a transparent conductor layer on a substrate; On this transparent conductor layer, form one first protective layer; On this first protective layer, formed one with last thin-film transistor; Form in this first protective layer one with upper shed exposing this transparent conductor layer, and those openings form a pixel region; In those openings, form a luminous organic material layer; And at a metal electrode layer of the last formation display frame of those luminous organic material layers, wherein those metal electrode layers are electrically connected to a drain of those thin-film transistors.
18. method according to claim 17 is characterized in that; Wherein comprise: on this first protective layer, formed one with last gate in the step that forms this thin-film transistor on this first protective layer; On this gate, form a lock insulating barrier; On this lock insulating barrier above this gate, form a channel layer; And on these channel layers, form a source electrode and this drain.
19. method according to claim 18 is characterized in that; Wherein this opening is formed in this lock insulating barrier and this first protective layer simultaneously to expose this transparent conductor layer.
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| CNB031098207A CN100373630C (en) | 2003-04-11 | 2003-04-11 | Active matrix organic electro-excited light-emitting display component and its making method |
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| CNB031098207A CN100373630C (en) | 2003-04-11 | 2003-04-11 | Active matrix organic electro-excited light-emitting display component and its making method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100444429C (en) * | 2004-12-14 | 2008-12-17 | 中华映管股份有限公司 | Active organic electroluminescent assembly array and manufacturing method thereof |
| CN101131958B (en) * | 2006-08-25 | 2011-08-24 | 中华映管股份有限公司 | Manufacturing method for pixel structure of organic electricity-stimulated lighting display apparatus |
| CN112992960A (en) * | 2019-12-17 | 2021-06-18 | 群创光电股份有限公司 | Electronic device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3641342B2 (en) * | 1997-03-07 | 2005-04-20 | Ｔｄｋ株式会社 | Semiconductor device and organic EL display device |
| TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
| GB2381658B (en) * | 2001-07-25 | 2004-03-03 | Lg Philips Lcd Co Ltd | Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100444429C (en) * | 2004-12-14 | 2008-12-17 | 中华映管股份有限公司 | Active organic electroluminescent assembly array and manufacturing method thereof |
| CN101131958B (en) * | 2006-08-25 | 2011-08-24 | 中华映管股份有限公司 | Manufacturing method for pixel structure of organic electricity-stimulated lighting display apparatus |
| CN112992960A (en) * | 2019-12-17 | 2021-06-18 | 群创光电股份有限公司 | Electronic device |
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