CN1531992A - Method for impvoding waste gas purifying offect in semiconductor production - Google Patents
Method for impvoding waste gas purifying offect in semiconductor production Download PDFInfo
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- CN1531992A CN1531992A CNA03120791XA CN03120791A CN1531992A CN 1531992 A CN1531992 A CN 1531992A CN A03120791X A CNA03120791X A CN A03120791XA CN 03120791 A CN03120791 A CN 03120791A CN 1531992 A CN1531992 A CN 1531992A
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- waste gas
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Abstract
The method of improving waste gas purifying effect in semiconductor production is to inject hot air in optimal temperature to waste gas outlet in the waste gas processing tank to eliminate harmful matter in the waste gas directly and thoroughly.
Description
Technical field
The present invention relates to a kind of method that improves the semiconductor manufacturing industry exhaust purification efficiency, particularly a kind of high-temperature hot air that utilizes makes it to force to import the waste gas outlet end of exhaust-gas treatment groove, with the method for harmful substance in the instantaneous heat semiconductor manufacturing industry waste gas.
Background technology
As everyone knows, in the process that semiconductor production is made at present, can produce the semiconductor manufacturing industry waste gas of tool toxicity, for fear of this waste gas environment is polluted and public hazards, must earlier the harmful substance in this waste gas be purified removal, can be disposed in the ambient atmosphere.
In order to deal carefully with semiconductor manufacturing industry waste gas, by the exhaust-gas treatment groove, and in the reaction chamber of exhaust-gas treatment groove, provide high temperature heat source that the harmful substance thermal decomposition in the semiconductor manufacturing industry waste gas is become innocuous substance, utilize the flusher in the exhaust-gas treatment groove again, with the water-soluble harmful substance among the semiconductor manufacturing industry waste gas, for example fluorine, chlorocarbon etc. and powder are soluble in water, and cooling makes semiconductor manufacturing industry waste gas be converted into just discharge behind the harmless gas.
The mode that the high temperature heat source of above-mentioned exhaust-gas treatment groove provides mainly can be divided into two kinds:
1, on the wall around the exhaust-gas treatment groove, establishes one group of thermojunction type heater, utilize heat conducting mode to conduct heat to the wall of reaction chamber, as high temperature heat source, by thermal-radiating mode the semiconductor manufacturing industry waste gas in the reaction chamber is carried out thermal decomposition again and purify operation.
Though can carrying out thermal decomposition to the semiconductor manufacturing industry waste gas in the reaction chamber, above-mentioned mode purifies operation, but because this mode provides reaction temperature is wall place at reaction chamber, low more apart from wall temperature far away more, non-uniform temperature in the reaction chamber, cause the purification operating efficiency that carries out thermal decomposition in the reaction chamber to differ, can reduce the purification efficiency of exhaust-gas treatment groove integral body.
And, semiconductor manufacturing industry waste gas in the reaction chamber that imports the exhaust-gas treatment groove after, can diffusion be covered with in the entire reaction chamber, differ the problem that then can cause semiconductor manufacturing industry waste gas to be purified fully if carry out the purification operating efficiency of thermal decomposition in the reaction chamber.
2, the waste gas outlet place in reaction chamber is provided with supply opening and another igniter that can supply combustion gas and combustion-supporting gas, utilize igniter that combustion gas is lighted and form flame as high temperature heat source, utilize flame directly the semiconductor manufacturing industry waste gas in the firm importing reaction chamber to be carried out the purification operation of thermal decomposition, can solve the problem that above-mentioned semiconductor manufacturing industry waste gas can't be purified fully.
The above-mentioned flame thermal source of asking for a fire purifies the method for semiconductor manufacturing industry waste gas, and than tool danger, and installation cost is also higher, is not inconsistent economic benefit.
Therefore, at the problems referred to above, the inventor studies intensively with great concentration to be engaged in research and development for many years, manufacturing and the marketing experience of semiconductor manufacturing industry waste gas treatment equipment Related product; Through constantly making great efforts research, test and improving, grind finally and create the present invention to solve the above problems.
Summary of the invention
The purpose of this invention is to provide a kind of method that improves the semiconductor manufacturing industry exhaust purification efficiency, the method purification efficiency that has overcome the flame thermal source purification semiconductor manufacturing industry waste gas of asking for a fire at present differs, semiconductor manufacturing industry waste gas can't be purified fully, dangerous property, installation cost is higher, is not inconsistent the shortcoming of economic benefit.
The objective of the invention is to be achieved through the following technical solutions:
Mainly be to force spray to supply with hot-air at semiconductor manufacturing industry waste gas outlet end, hot-air directly sprays and attacks the waste gas that semiconductor manufacturing industry waste gas outlet end imports whereby, and carry out mandatory elevated temperature heat to decompose simultaneously and purify operation, harmful substance in the waste gas can be purified before excessive loosing in advance, and then can improve the efficient that purifies semiconductor manufacturing industry waste gas.
The present invention has following advantage:
1, utilizes high-temperature hot air, make it to force to import the waste gas outlet end of exhaust-gas treatment groove, with harmful substance in the transient heating semiconductor manufacturing industry waste gas, can effectively improve the purification efficiency of semiconductor manufacturing industry waste gas, overcome the non-uniform temperature in the present exhaust-gas treatment groove reaction chamber, and the shortcoming that the purification operating efficiency that causes thermal decomposition differs has improved the purification efficiency of exhaust-gas treatment groove integral body, has solved the problem that semiconductor manufacturing industry waste gas can't be purified fully.
2, utilize air heat as high temperature heat source, it does not need to spend in addition to buy other equipment and materials etc., so cost is comparatively cheap, meets economic benefit; Do not have the problem of securities such as combustion gas leaks, gas explosion again, so degree of safety is higher.
For the present invention can be described in detail in detail, conjunction with figs. is described in detail as follows.
Description of drawings
A kind of semiconductor manufacturing industry exhaust-gas treatment groove structural representation that Fig. 1 uses for the present invention.
The another kind of semiconductor manufacturing industry exhaust-gas treatment groove structural representation that Fig. 2 uses for the present invention.
Another semiconductor manufacturing industry exhaust-gas treatment groove structural representation that Fig. 3 uses for the present invention.
Another semiconductor manufacturing industry exhaust-gas treatment groove structural representation that Fig. 4 uses for the present invention.
The specific embodiment
Embodiment 1
Semiconductor manufacturing industry exhaust-gas treatment groove 1 structural representation that a kind of method that improves the semiconductor manufacturing industry exhaust purification efficiency of the present invention is as shown in Figure 1 used, comprise: semiconductor manufacturing industry exhaust-gas treatment groove 1 and the hot blast generator 2 formed by cell body 11 and headstock 12, wherein
This cell body 11 has reaction chamber 111;
This headstock 12 is located at an end of above-mentioned reaction chamber 111, and this headstock 12 has the waste gas outlet 13 more than or;
This hot blast generator 2 is located on the headstock 12, this hot blast generator 2 has heated chamber 21, one end of this heated chamber 21 offers air inlet 22, these air inlet 22 places are provided with fan 24, be provided with heater 25 in this heated chamber 21, the other end of this heated chamber 21 offers air outlet 23, and this air outlet 23 is corresponding with above-mentioned waste gas outlet 13.
Method of the present invention is: use said apparatus, waste gas outlet 13 1 ends in exhaust-gas treatment groove 1 force spray to supply with hot-air 30, and this hot-air 30 thoroughly purifies the harmful substance in the waste gas 4, to reach the purpose of the purification efficiency that improves the exhaust-gas treatment groove.
In the time will purifying the operation of semiconductor manufacturing industry waste gas 4, utilize earlier in the air 3 suction heated chambers 21 of fan 24 with the external world of hot blast generator 2, after utilizing heated chamber 21 interior heaters 25 that inhaled air 3 transient heatings are formed high-temperature hot air 30, force sprays to waste gas outlet 13 1 ends via air outlet 23 again.
In the time of when semiconductor manufacturing industry waste gas 4 is imported reaction chamber 111 by waste gas outlet 13 1 ends in, can before waste gas outlet 13, be subjected to forcing hot-air 30 sprays of spray to attack, make can the be heated phenomenon of generation thermal decomposition of harmful substance in the waste gas 4.
Because the harmful substance in the semiconductor manufacturing industry waste gas 4 in the importing reaction chamber 111 is before excessive loosing, forced the hot-air 30 of spray to purify earlier before the waste gas outlet 13, therefore, harmful substance in the semiconductor manufacturing industry waste gas 4 can not overflow and is dissipated to other position of reaction chamber 111, can solve the not good problem of purification efficiency of overflowing and loosing and caused because of the harmful substance in the semiconductor manufacturing industry waste gas 4 everywhere.
And, this hot-air 30 directly uses hot blast generator 2 suction outside airs 3 also to heat and form, the source of its hot-air 30 and temperature all can be controlled, therefore, purification efficiency of the present invention can be stable be controlled, and the present invention system utilizes air 3 heating as high temperature heat source, and it does not need the purchase of equipment material etc. of spending in addition, so cost is comparatively cheap; Do not have the problem of securities such as combustion gas leaks, gas explosion again, so degree of safety is also higher.
The function of hot blast generator 2 used in the present invention mainly is to produce hot-air 30, and in order to the harmful substance in the thermal decomposition waste gas, therefore, hot-air 30 can be stablized forces to be injected in waste gas outlet 13 1 ends.
Semiconductor manufacturing industry exhaust-gas treatment groove 1 structural representation and method that the of the present invention another kind of method that improves the semiconductor manufacturing industry exhaust purification efficiency is as shown in Figure 2 used are similar to embodiment 1, and difference is:
Can stablize the pressure spray under the prerequisite of waste gas outlet 13 1 ends at hot-air 30, hot blast generator 2 is located on the cell body 11.
Semiconductor manufacturing industry exhaust-gas treatment groove 1 structural representation and method that the method for another raising semiconductor manufacturing industry exhaust purification efficiency of the present invention is as shown in Figure 3 used are similar to embodiment 1, and difference is:
Can stablize the pressure spray under the prerequisite of waste gas outlet 13 1 ends at hot-air 30, hot blast generator 2 is located at outside the exhaust-gas treatment groove 1, utilizes warm-air pipe 5 that hot-air 30 is imported in the cell body 11 from headstock 12 ends again.
Semiconductor manufacturing industry exhaust-gas treatment groove 1 structural representation and method that the method for another raising semiconductor manufacturing industry exhaust purification efficiency of the present invention is as shown in Figure 4 used are similar to embodiment 1, and difference is:
Can stablize the pressure spray under the prerequisite of waste gas outlet 13 1 ends at hot-air 30, hot blast generator 2 is located at outside the exhaust-gas treatment groove 1, utilizes warm-air pipe 5 that hot-air 30 is imported in the cell bodies 11 again.
The device construction feature that the inventive method is used is not limited thereto, and anyly knows this skill person in field of the present invention, can think easily and variation or modification, be all claim of the present invention, at this Chen Ming once more.
Claims (8)
1, a kind of method that improves the semiconductor manufacturing industry exhaust purification efficiency, the waste gas outlet end that is included in the exhaust-gas treatment groove forces spray to supply with hot-air, this hot-air directly sprays in the waste gas of attacking in the waste gas outlet end enters the exhaust-gas treatment groove, in order to harmful substance in the thermal decomposition waste gas.
2, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 1, wherein this hot-air is produced by the hot blast generator.
3, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 2, wherein this hot blast generator is located in the headstock of exhaust-gas treatment groove.
4, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 2, wherein this hot blast generator is located on the exhaust-gas treatment groove.
5, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 2, wherein this hot blast generator is located at outside the exhaust-gas treatment groove.
6, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 5, wherein this hot blast generator is connected a warm-air pipe, and hot-air is imported waste gas outlet end in the exhaust-gas treatment groove.
7, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 6, wherein this warm-air pipe is located on the headstock of exhaust-gas treatment groove.
8, the method for raising semiconductor manufacturing industry exhaust purification efficiency according to claim 6, wherein this warm-air pipe is located on the exhaust-gas treatment groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03120791 CN1268416C (en) | 2003-03-19 | 2003-03-19 | Method for impvoding waste gas purifying offect in semiconductor production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03120791 CN1268416C (en) | 2003-03-19 | 2003-03-19 | Method for impvoding waste gas purifying offect in semiconductor production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1531992A true CN1531992A (en) | 2004-09-29 |
| CN1268416C CN1268416C (en) | 2006-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03120791 Expired - Fee Related CN1268416C (en) | 2003-03-19 | 2003-03-19 | Method for impvoding waste gas purifying offect in semiconductor production |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110836379A (en) * | 2018-08-15 | 2020-02-25 | 东服企业股份有限公司 | Exhaust gas introduction device |
-
2003
- 2003-03-19 CN CN 03120791 patent/CN1268416C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110836379A (en) * | 2018-08-15 | 2020-02-25 | 东服企业股份有限公司 | Exhaust gas introduction device |
| CN110836379B (en) * | 2018-08-15 | 2021-09-21 | 东服企业股份有限公司 | Exhaust gas introduction device |
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| Publication number | Publication date |
|---|---|
| CN1268416C (en) | 2006-08-09 |
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Granted publication date: 20060809 Termination date: 20200319 |
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| CF01 | Termination of patent right due to non-payment of annual fee |