CN1531379A - Active matrix organic electroluminescent displaying element - Google Patents
Active matrix organic electroluminescent displaying element Download PDFInfo
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- CN1531379A CN1531379A CNA031194842A CN03119484A CN1531379A CN 1531379 A CN1531379 A CN 1531379A CN A031194842 A CNA031194842 A CN A031194842A CN 03119484 A CN03119484 A CN 03119484A CN 1531379 A CN1531379 A CN 1531379A
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Abstract
An electric connector used for connecting the circuit with chip module, mainly comprises a strip shape insulation body, several conduction terminal held in insulation body, the stiffened device combined in the insulation body, the pressboard and strengthening device making pivot joint with insulation body; particularly, the strengthening device is a metal lengthwise hollow frame structure, several fixture hook are set at two the lengthwise opposite wall of the strengthening device, its widthwise two opposite wall are buckled to the folding slice toward the combining direction with insulation body, several fixture groove and opening hole are set at the place opposite the fixture hook and folding slice on the insulation body, when the chip module combining with electric connector, the strengthening device can each buckle up with the fixture groove and opening hole. Because the strengthening device is combined with insulation body to increase its strength, so it can prevent insulation body from distortion due to oversize pressure, thereby ensure the reliable electric connection between the chip module and electric connector.
Description
Technical field
The present invention is about a kind of flat-panel monitor (flat display), especially about a kind of active matrix organic electroluminescence display element (Active Matrix Organic Electro-LuminescenceDisplay, AMOELD).
Background technology
Organic electroluminescent device is a kind of semiconductor element that converts electric energy to luminous energy and have high conversion efficiency, is applied to the light-emitting component of indicator light, display panel and optical read/write head etc. usually.Because organic electro-luminescent display unit possesses some characteristics, as do not have that visual angle restriction, manufacturing process are simple, low cost, high response speed, operating temperature range is wide and advantage such as full color, meet the requirement of multimedia era display characteristics, become the focus of research in recent years.
In the evolution of display, for increasing the display size of organic electro-luminescent display unit, a kind of active matrix organic electroluminescence display element is in positive development, its structure is to make one deck organic electro luminescent layer on making with the substrate of active driving matrix element (as thin-film transistor), and a cathode layer.In this structure, luminous by by pixel electrode on the matrix base plate (anode) and cathode layer with the organic electro luminescent layer that the mode of current drives is controlled between the two, and reach the demonstration purpose.Manufacture method about traditional active matrix organic electroluminescence display element will be described in following content.
Figure 1 shows that the structural representation of traditional active matrix organic electroluminescence display element, Figure 2 shows that the enlarged diagram at A place among Fig. 1.As Fig. 1 and shown in Figure 2; traditional active matrix organic electroluminescence display element is installed on the substrate 100; and on this substrate 100 order grid 102, gate insulator 104 be installed, colluded layer 106, source/drain 108, protective layer 110, flatness layer 112, anode 116, organic function layer 118, and cathode layer 120.Wherein, grid 102 is to be made on the substrate 100 through the first road photo-etching technological process, makes the surface of gate insulator 104 with cover grid 102 and substrate 100 then.Follow through the second road photo-etching technological process on the gate insulator 104 of grid 102 tops, make and collude layer 106, make source/drain 108 through the 3rd road photo-etching technological process in colluding layer 106 both sides more afterwards.The grid 102 of above-mentioned made, gate insulator 104, collude layer 106 and source/drain 108 and constitute a thin-film transistor.
After making thin-film transistor, sequentially built protective layer 110 and flatness layer 112 are covered on the thin-film transistor, and make contact openings 114 through the 4th road photo-etching technological process in protective layer 110 and flatness layer 112.Then make anode 116 through the 5th road photo-etching technological process on flatness layer 112, anode 116 is by contact openings 114, with a wherein end (for example, the drain electrode end) electric connection of source/drain 108 of thin-film transistor.And after anode 116 is made, make organic function layer 118 and cathode layer 120 on flatness layer 112 and anode 116 whole surfaces, so promptly finished the making of active matrix organic electroluminescence display element.
As shown in Figure 2, organic function layer 118 is to directly overlay on the anode 116, because organic function layer 118 (for example thin layers such as organic luminous layer, electron transfer layer, hole transmission layer) is organic compound, and all be to adopt the mode of hot evaporation or electron beam evaporation plating to make, so the step coverage (step coverage) of organic function layer 118 is not good, and there is the crack to produce easily in anode 116 edges.These make the cathode layer 120 of follow-up formation directly contact short circuit with anode 116 because of the not good crack regular meeting that causes of step coverage.Yet the crack of above-mentioned organic function layer 118 also provides aqueous vapor to infiltrate the path of element, causes the life-span of element to descend.
In addition, because the manufacturing materials major part of at present general anode 116 is indium tin oxide (Indium Tin Oxide, ITO), when making electrode pattern, usually adopt the mixed solution or the oxalic acid solution of nitric acid and hydrochloric acid to carry out etching, and anode 116 its edge angle (taper) after etching is not good, has more given prominence to above-mentioned ladder and has covered bad problem.
Therefore, the object of the present invention is to provide a kind of active matrix organic electroluminescence display element, can effectively avoid the short circuit problem between anode and the cathode layer.
Summary of the invention
For achieving the above object, the present invention proposes a kind of active matrix organic electroluminescence display element, and its primary structure comprises: a substrate, a film transistor matrix, a dielectric layer, an organic function layer and a cathode layer.Wherein, film transistor matrix is disposed on the substrate, and film transistor matrix is made up of the thin-film transistor of a plurality of arranged, a plurality of anode, many scan wiring and data wirings in order to drive thin film transistors corresponding to the thin-film transistor configuration; A dielectric layer is disposed on the substrate, and covers the edge of each anode in the film transistor matrix; Organic function layer is disposed on film transistor matrix and the dielectric layer; Cathode layer then is disposed on the organic function layer.
As described in the preferred embodiments of the present invention, thin-film transistor can be bottom gate thin film transistor (bottom gate TFT), and this bottom gate thin film transistor is by grid, gate insulator, colludes layer and source/drain is constituted.Wherein, gate configuration is on substrate; Gate insulator is disposed on the substrate, and cover grid; Collude on the gate insulator that layer is disposed at grid top; Source/drain then is disposed at the both sides of colluding layer.
When thin-film transistor was bottom gate thin film transistor, above-mentioned anode can be disposed on the gate insulator, and respectively with corresponding thin-film transistor in source/drain electrically connect.
When thin-film transistor was bottom gate thin film transistor, above-mentioned dielectric layer can be made into one with protective layer, to cover the edge of whole bottom gate thin film transistor and each anode simultaneously.
As described in the preferred embodiments of the present invention, the material of anode can adopt indium tin oxide (ITO) or indium-zinc oxide (IZO), and the material of cathode layer can adopt conductor materials such as Mg, Ag, MgAg-Al, LiAl or LiF-Al.
As described in the preferred embodiments of the present invention, organic function layer can be an organic luminous layer.Yet in order to improve the luminous efficiency of organic electro-luminescent display unit, organic function layer can be the laminated construction of plural layers such as hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer.Wherein, hole injection layer is disposed on this anode layer; Hole transmission layer is disposed on the hole injection layer; Organic luminous layer is disposed at hole transmission layer: electron transfer layer then is disposed between organic luminous layer and the cathode layer.
In the preferred embodiments of the present invention, mainly be to utilize dielectric layer to cover the edge of anode, effectively to avoid the phenomenon of short circuit between each anode edge and the cathode layer.The method is applicable to various film transistor matrixes, as amorphous silicon film transistor matrix and low-temperature polysilicon film transistor matrix two big classes (classifying according to colluding layer characteristic).In addition, said method also can be applicable to the matrix (classifying according to thin-film transistor structure) that top grid thin-film transistor (top gate TFT) and bottom gate thin film transistor (bottom gate TFT) are constituted.
Description of drawings
Figure 1 shows that the structural representation of traditional active matrix organic electroluminescence display element;
Figure 2 shows that the enlarged diagram at Figure 1A place;
Figure 3 shows that the circuit diagram of the active matrix organic electroluminescence display element of a preferred embodiment of the present invention;
Figure 4 shows that the schematic layout pattern of a preferred embodiment of the present invention active matrix organic electroluminescence display element; And
Figure 5 shows that the generalized section of A-A section among Fig. 4.
The drawing reference numeral explanation:
100,200: substrate
102,202: grid
104,204: gate insulator
106,206: collude layer
108,208: source/drain
110: protective layer
112: flatness layer
114,204a: contact openings
116,212: anode
118,214: organic function layer
120,216: cathode layer
210: dielectric layer
300: distribution
TFT1, TFT2: thin-film transistor
Cst: storage capacitors
SL: scan wiring
DL: data wiring
Embodiment
For clear and definite above-mentioned and other purpose, feature and advantage of the present invention, the present invention is described in detail below in conjunction with accompanying drawing and preferred embodiment.
Figure 3 shows that the circuit diagram of the active matrix organic electroluminescence display element of a preferred embodiment of the invention.As shown in Figure 3, this preferred embodiment is the mode that adopts driven with active matrix, adopts the major advantage of this mode to be, can further improve picture contrast and display capabilities.In the active matrix organic electroluminescence display element of this preferred embodiment, each pixel correspondence disposes two thin-film transistor TFT1 and TFT2, the grid of thin-film transistor TFT1 and scan wiring SL electrically connect, the source terminal of thin-film transistor TFT1 and data wiring DL electrically connect, and the grid of the drain electrode end of thin-film transistor TFT1 and thin-film transistor TFT2 electrically connects; The source/drain of thin-film transistor TFT2 can apply respectively with voltage Vdd, Vss; And storage capacitors Cst is in order to keep the potential difference between the grid and source terminal among the thin-film transistor TFT2.
In this preferred embodiment, thin-film transistor TFT1 is in order to store the gate voltage values of thin-film transistor TFT2, with the ON/OFF of control TFT TFT2.In whole turntable driving process, thin-film transistor TFT2 will transmit continuous current to organic electro-luminescent display unit OLED.This type of drive can reduce the consumption of drive current and prolong the life-span of organic electro-luminescent display unit OLED.
Figure 4 shows that the schematic layout pattern of the active matrix organic electroluminescence display element of a preferred embodiment of the present invention, and Figure 5 shows that the generalized section of A-A section among Fig. 4.With reference to figure 4 and Fig. 5; the active matrix organic electroluminescence display element of this preferred embodiment is installed on the substrate 200, and on this substrate 200 sequentially built grid 202, gate insulator 204, collude layer 206, anode 212, source/drain 208, protective layer 210, organic function layer 214 and cathode layer 216.In addition, when making grid 202, the present invention makes with distribution 300 in the appropriate location of substrate 200 again, and this distribution 300 can apply with voltage Vdd.
The material of above-mentioned anode 212 can be indium tin oxide (ITO) or indium-zinc oxide (IZO), and the material of cathode layer 216 can be conductor materials such as Mg, Ag, MgAg-Al, LiAl or LiF-Al.In addition, organic function layer 214 can be an organic luminous layer.Yet in order to improve the luminous efficiency of organic electro-luminescent display unit, organic function layer 214 can be the laminated construction of plural layers such as hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer.Wherein, hole injection layer is disposed on this anode layer; Hole transmission layer is disposed on the hole injection layer; Organic luminous layer is disposed at hole transmission layer: electron transfer layer then is disposed between organic luminous layer and the cathode layer 216.
In this preferred embodiment, grid 202, distribution 300 and scan wiring SL are produced on the substrate 200 by the first road photo-etching technological process, and wherein grid 202 is made simultaneously with scan wiring SL and is electrically connected to each other.Then make gate insulator 204, surface with cover grid 202, distribution 300, scan wiring SL and substrate 200, and pass through the second road photo-etching technological process and on gate insulator 204, make contact openings 204a, and come out in the surface of distribution 300.By the 3rd road photo-etching technological process, on the gate insulator above the grid 202 204, make and collude layer 206 then.By the 4th road photo-etching technological process, the appropriate location on gate insulator 204 makes anode 212 afterwards.And then by the 5th road photo-etching technological process, make source/drain 208 colluding layer 206 both sides, wherein an end of source/drain 208 (for example being drain electrode end) is across the edge of anode 212, electrically connect with anode 212, the other end of source/drain 208 (for example being drain electrode end) then can extend to the top of distribution 300, by being electrically connected by contact openings 204a and distribution 300.The grid 202 of above-mentioned making, gate insulator 204, collude layer 206 and source/drain 208 and constitute a thin-film transistor, and the thin-film transistor of these arranged and corresponding anode 212 promptly constitute film transistor matrix (TFT Array).
After forming film transistor matrix, then make dielectric layer 210 being covered on the thin-film transistor, and carry out the 6th road photo-etching technological process dielectric layer 210 is etched figure so that anode 212 is come out.It should be noted that after dielectric layer 210, still have the edge that dielectric layer 210 partly covers anode 212.And after dielectric layer 210 etches figure, on the whole surface of dielectric layer 210 and anode 212, make organic function layer 214 and cathode layer 216, so promptly finished the making of active matrix organic electroluminescence display element.
With reference to figure 4, the structure of the active matrix organic electroluminescence display element of this preferred embodiment mainly comprises a substrate 200, film transistor matrix (comprise scan wiring SL, data wiring DL, grid 202, gate insulator 204, collude layer 206 and source/drain 208), dielectric layer 210, an organic function layer 214 and a cathode layer 216.Wherein, dielectric layer 210 is installed on the substrate, and covers the edge of each anode 212 in the film transistor matrix; Organic function layer 214 is installed on film transistor matrix and the dielectric layer 210; Cathode layer 216 then is installed on the organic function layer 214.Because the material of dielectric layer 210 is oxygen silicide, nitrogen silicide etc., can adopt the good chemical vapor deposition (CVD) of step coverage, sputter (sputtering) or spin coating manufacture crafts such as (spin coating), even therefore the edge angle of anode 212 is not good, dielectric layer 210 still can be effectively with its covering.In other words, the edge of anode 212 can make the organic function layer 214 of follow-up making not have the crack generation, and then can avoid the short circuit problem between anode 212 and the cathode layer 216 under the protection of dielectric layer 210.
As shown in Figure 4, when thin-film transistor was bottom gate thin film transistor, above-mentioned dielectric layer 210 can be made into one with the protective layer of element, to cover the edge of whole bottom gate thin film transistor and each anode 212 simultaneously.
This preferred embodiment mainly utilizes dielectric layer covering the edge of anode, and effectively avoids the short circuit phenomenon between each anode edge and the cathode layer.Though more than the amorphous silicon film transistor matrix only installed with bottom-gate be that example describes, be not the present invention only is limited to the foregoing description.Aforesaid way is applicable to various film transistor matrixes, as amorphous silicon film transistor matrix and low-temperature polysilicon film transistor matrix two big classes (according to colluding layer property sort); In addition, the matrix that also constituted of aforesaid way (according to the thin-film transistor structure classification) applicable to top grid thin-film transistor and bottom gate thin film transistor.
Though the present invention is open in conjunction with above preferred embodiment; yet preferred embodiment is not in order to limit the present invention; any be proficient in those skilled in the art should be clear and definite; without departing from the spirit and scope of the present invention; can do a large amount of the variation and modification, so protection scope of the present invention should be as the criterion by limiting of claims.
Claims (8)
1, a kind of active matrix organic electroluminescence display element is characterized in that, comprising:
A substrate;
A film transistor matrix is disposed on this substrate, and wherein this film transistor matrix comprises plurality of films transistor, a plurality of anode, a plurality of scan wirings and a plurality of data wirings;
A dielectric layer is disposed on this substrate, and covers the edge of those anodes;
An organic function layer is disposed on this film transistor matrix and this dielectric layer; And
A cathode layer is disposed on this organic function layer.
2, active matrix organic electroluminescence display element as claimed in claim 1 is characterized in that, described thin-film transistor is a plurality of bottom gate thin film transistors, and described a plurality of bottom gate thin film transistor comprises:
A grid is disposed on this substrate;
A gate insulator is disposed on this substrate, and covers this grid;
One is colluded layer, is disposed on this gate insulator of this grid top; And
A source/drain is disposed at this and colludes layer both sides.
3, active matrix organic electroluminescence display element as claimed in claim 2 is characterized in that, described anode arrangement and electrically connects with corresponding source/drain respectively on this gate insulator.
4, active matrix organic electroluminescence display element as claimed in claim 3 is characterized in that, described dielectric layer further covers these bottom gate thin film transistors.
5, active matrix organic electroluminescence display element as claimed in claim 1 is characterized in that, described anode material comprise indium tin oxide, indium-zinc oxide one of them.
6, active matrix organic electroluminescence display element as claimed in claim 1 is characterized in that, described organic function layer comprises an organic luminous layer.
7, active matrix organic electroluminescence display element as claimed in claim 1 is characterized in that, described organic function layer comprises:
A hole injection layer is disposed on this anode layer;
A hole transmission layer is disposed on this hole injection layer;
An organic luminous layer is disposed at this hole transmission layer: and
An electron transfer layer is disposed between this organic luminous layer and this cathode layer.
8, active matrix organic electroluminescence display element as claimed in claim 1 is characterized in that, the material of this cathode layer comprise Mg, Ag, MgAg-Al, LiAl, LiF-Al one of them.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031194842A CN1531379A (en) | 2003-03-12 | 2003-03-12 | Active matrix organic electroluminescent displaying element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031194842A CN1531379A (en) | 2003-03-12 | 2003-03-12 | Active matrix organic electroluminescent displaying element |
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| CN1531379A true CN1531379A (en) | 2004-09-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015051610A1 (en) * | 2013-10-12 | 2015-04-16 | 深圳市华星光电技术有限公司 | Method for avoiding short circuit of metal line in oled display device |
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2003
- 2003-03-12 CN CNA031194842A patent/CN1531379A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015051610A1 (en) * | 2013-10-12 | 2015-04-16 | 深圳市华星光电技术有限公司 | Method for avoiding short circuit of metal line in oled display device |
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