CN1525534A - Plasma processing device and making method of electrostatic suction cup - Google Patents
Plasma processing device and making method of electrostatic suction cup Download PDFInfo
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- CN1525534A CN1525534A CNA031067298A CN03106729A CN1525534A CN 1525534 A CN1525534 A CN 1525534A CN A031067298 A CNA031067298 A CN A031067298A CN 03106729 A CN03106729 A CN 03106729A CN 1525534 A CN1525534 A CN 1525534A
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Abstract
The invention provides a semiconductor producing device with static sucking disk of cheap price and high reliability. The static sucking disk has following characters: it is made up of insulting base board, several conducting films made up from aluminum on the surface and passivation aluminum film formed by oxidizing the surface positive pole of the conducting film. The surface of the sucking crystal piece of the static sucking plate forms a static double-pole type through adding straight voltage with the reversal direction to the conducting film.
Description
Technical field
The present invention relates to plasma processing apparatus.The invention still further relates to the manufacture method of plasma device with the electrostatic chuck that on its wafer adsorption plane, disposes the static bipolar electrode.
Background technology
Utilize passivation aluminium film to adopt following structure:, to form passivation aluminium film as adsorbed film by carry out anodic oxidation on its surface with the basis material of aluminium as electrostatic chuck as the existing plasma processing apparatus of the adsorbed film of electrostatic chuck.(for example, opening flat 5-160076) with reference to the spy
With the electrostatic chuck of passivation aluminium as adsorbed film, for example with ceramic sintered bodies as the electrostatic chuck of adsorbed film relatively, have simple structure, cheap, advantage such as manufacturing time is short.But opposite, also exist 2 serious problems with passivation aluminium film as the existing electrostatic chuck of adsorbed film.The first forms the electrostatic chuck of one pole type easily because the degree of freedom of design is low, and it is then relatively more difficult to form ambipolar electrostatic chuck.Another problem is through regular meeting the electronics of passivation aluminium film or the situation that mechanical integrity reduces to take place.
About previous problem, owing in plasma, use under the situation of one pole type electrostatic chuck, plasma produces absorption affinity as the conductor effect, so it is former thereby cause under the situation of plasma disappearance because of certain in plasma treatment, absorption affinity also disappears thereupon, just can't adsorb wafer.But, in order to promote the heat conduction between electrostatic chuck and the wafer, gas such as filling helium in the minim gap of wafer and electrostatic chuck all many times.Have at this chip back surface under the state of airload, absorption affinity one disappears, and wafer is just promoted to break away from from electrostatic chuck by air pressure, can produce the position deviation of wafer, even problem such as wafer breakage can take place.This problem is impossible for the bipolar electrostatic chuck that no matter has or not plasma can both produce absorption affinity.So can improving design freedom, to make bipolar electrode be a very important problem.
About a back problem, in the adsorbed film of electrostatic chuck, exist under the situation of crack and defectives such as peeling off on the other hand, will produce problems such as withstand voltage properties decline and adsorbed film disengaging.Particularly passivation aluminium film inside when film forming exists the situation in small crack a lot, because based on this crack, the crack just might enlarge under lower stress, all just should do one's utmost to avoid producing the structure of tensile stress load on passivation aluminium film.But, be basis material with the bigger aluminium of coefficient of thermal expansion, under the less situation of passivation aluminium film of coefficient of thermal expansion as adsorbed film, because the coefficient of thermal expansion of basis material and adsorbed film is widely different, so in variations in temperature, will produce very big thermal stress at the near interface of basis material and adsorbed film.Especially when heating up, owing to the tensile stress load is arranged in the adsorbed film side, so will produce the problem that causes the adsorbed film crack and make it to enlarge.So suppressing the crack that produces owing to this thermal stress and suppressing to enlarge also is very important problem.
Summary of the invention
The present invention considers such problem and proposes.The purpose of this invention is to provide cheap, easy-to-use, or the high plasma processing apparatus of reliability, and cheap, easy-to-use, or the manufacture method of the high electrostatic chuck of reliability.
Above-mentioned problem can be finished by the plasma processing apparatus with following feature: this plasma processing unit has the plasma producing apparatus that generates plasma in vacuum processing chamber; The electrostatic chuck that adsorbs the processed material wafer in the above.Wherein, the face that adsorbs the above-mentioned electrostatic chuck of above-mentioned wafer carries out anodic oxidation by aluminium and the passivation aluminium film that generates forms, and the face that adsorbs above-mentioned wafer to become static bipolar.
For finishing above-mentioned problem, the structure of above-mentioned electrostatic chuck is to form conductor layer on insulator matrix material, forms aluminium lamination thereon again, this aluminium lamination of anodic oxidation.
For finishing above-mentioned problem, the above-mentioned basis material of above-mentioned electrostatic chuck is a pottery.
For finishing above-mentioned problem,, form the film of insulation again on the surface of above-mentioned passivation aluminium lamination.
For finishing above-mentioned problem, above-mentioned insulation film is a pottery.
For finishing above-mentioned problem, make electrostatic chuck and have following steps: form a plurality of conductive films on the surface of insulator matrix; Surface at above-mentioned a plurality of conductive films forms the aluminium film; The surperficial anodic oxidation of above-mentioned aluminium film is formed passivation aluminium film.
In addition, for finishing above-mentioned problem, form the insulation film that forms by pottery on the surface of above-mentioned passivation aluminium film.
Description of drawings
Fig. 1 is oblique view and the sectional view that is relevant to the electrostatic chuck of one embodiment of the present of invention.
Fig. 2 is the sectional view that is relevant to the Etaching device of one embodiment of the present of invention.
Fig. 3 is the sectional view that the manufacture method of the electrostatic chuck that is relevant to one embodiment of the present of invention is described.
Fig. 4 is the sectional view that is relevant to the electrostatic chuck of an alternative embodiment of the invention.
Fig. 5 is the sectional view that is relevant to the electrostatic chuck of an alternative embodiment of the invention.
Fig. 6 is the oblique view that is relevant to the electrostatic chuck of one embodiment of the present of invention.
Embodiment
As mentioned above, the problem for plasma one disappearance absorption affinity has also disappeared makes ambipolar can the solution to electrostatic chuck.This is because whether the bipolar electrostatic chuck plasma exists all produces absorption affinity, so still can keep its absorption affinity even plasma disappears.But, existing method, the promptly single method to aluminum substrate material enforcement anodized can not form ambipolar electrostatic chuck.This is because even will form bipolarly at adsorption plane, the aluminum substrate material below the adsorption plane also can form one pole.So embodiments of the invention are on the insulating properties basis material, a plurality of aluminium films of each self-forming electric insulation form bipolar electrostatic chuck by these aluminium films are carried out anodic oxidation.
On the other hand, the electronics of passivation aluminium film or the low problem of mechanical performance can solve as above-mentioned insulating properties basis material by use is for example ceramic.This is because under the coefficient of thermal expansion of basis material and situation that the coefficient of thermal expansion of passivation aluminium equates, because the volumetric expansion during variations in temperature and to be contracted in electrostatic chuck integral body can be uniformly is so just can be suppressed at the very big thermal stress of next door, interface generation of passivation aluminium and aluminium.In addition, by forming the tunicle of insulation again on the surface of passivation aluminium film, for example ceramics based diaphragm can further improve the reliability of adsorbed film.
Below, describe embodiments of the invention in detail with accompanying drawing.
Fig. 1 is the sectional view of structural outline of sample stage of loaded with wafers of first embodiment of explanation semiconductor processing device of the present invention.Its electrostatic chuck 1 that cuts off model of expression is mainly used to adsorb wafer 7 and to its purpose of processing etc. among Fig. 1.Below the structure and the using method of electrostatic chuck of the present invention described.
The basic structure of electrostatic chuck 1 of the present invention partly has basis material 6, conductive film 4a and 4b, passivation aluminium film 2a and 2b, power supply wiring 5a and 5b.Basis material 6 is an insulator, clips conductive film 4a and 4b and form passivation aluminium film 2a and 2b on it.In the inside of basis material 6, run through power supply wiring 5a and 5b that basis material 6 forms conduction, the end of power supply wiring 5a and 5b is connected with conductive film 4a and 4b separately.The other end of power supply wiring 5a and 5b is connected with the DC power supply that is used for Electrostatic Absorption, can provide current potential to conductive film 4a and 4b independently.
Below, the step of electrostatic chuck 1 absorption wafer 7 in the present embodiment is described.At first, utilize not shown wafer handling device, the wafer 7 that will transmit around with electrostatic chuck 1 around arrive position unanimous on the whole after, it is loaded on the electrostatic chuck 1.Then, shown in Fig. 1 (b), provide opposite polarity current potential to conductive film 4a and 4b respectively by power supply wiring 5a and 5b.For example, if provide positive charge to conductive film 4a respectively, 4b provides negative electrical charge to conductive film, shown in Fig. 1 (b), the electric charge on the surface of wafer 7 moves, the positive and negative charge on conductive film 4a and 4b and wafer 7 surfaces produces attraction separately, promptly by the Coulomb force wafer 7 is adsorbed on the electrostatic chuck 1.
Under the state that by above step wafer 7 is adsorbed on the electrostatic chuck 1, wafer 7 is implemented needed plasma treatment.Finish the back when electrostatic chuck 1 is removed wafer 7 in plasma treatment, the current potential that is applied on conductive film 4a and the 4b turns back near 0, and the CHARGE DISTRIBUTION equalization of wafer surface is got final product.
In addition, provide to conductive film 4a and 4b that polarity is identical, under the situation of equal-sized current potential, it is can not produce absorption affinity that former state keeps, but the potential difference of current potential by making wafer and conductive film 4a utmost point 4b becomes and produce the Coulomb force greatly, then might make it to adsorb.
Below, as an example of plasma treatment, be example with the etching step of one of key step in the semiconductor manufacturing, the embodiment of plasma processing apparatus of the present invention is described.
What Fig. 2 represented is the summary of the Etaching device of present embodiment use.In Fig. 2, process chamber R is the vacuum tank that vacuum pressure can reach about 1/10000th 1Pa, is provided with the antenna 110 of launching electromagnetic wave, the electrostatic chuck 100 that the bottom is provided with samples 700 such as loaded with wafers on its top.Antenna 110 and electrostatic chuck 100 by parallel, relatively be provided with.Around process chamber R, be provided with the magnetic field of forming by for example coil and deflecting coil and form device 101.Electromagnetic wave that sends by antenna 110 and magnetic field form the interaction in the magnetic field that device 101 forms, and will import the processing gaseous plasmaization of inner treatment chamber and produce plasma P, handle sample 700.
Process chamber R carries out vacuum exhaust by vacuum pumping system 106, by pressure control device 107 controlled pressures.Processing pressure is adjusted in the following scope of the above 10Pa of 0.1Pa.The part that antenna 110 is used as vacuum tank is arranged in the outer cover 114.Carry out the processing gas that the etching, film forming etc. of sample are handled, supply with the flow and the mixed proportion of regulation by not shown gas supply device, and control, supply with to process chamber with the distribution of regulation.
Antenna power 121, antenna grid bias power supply 122 as antenna power 120 are connected on the antenna 110 by coupling circuit filtering system 123,124 separately, are connected on the ground wire by filter 125 in addition.Antenna power 121 provides electric power with 300MHz to the UHF band frequency of 1GHz.In the present embodiment, the frequency of antenna power 121 is 450MHz.Antenna grid bias power supply 122 applies the grid bias power supply of tens of kHz to tens of MHz range frequencies to antenna 110.This frequency is 13.56MHz in the present embodiment.
In the bottom of process chamber R, electrostatic chuck 100 is provided with facing to antenna 110.The supply for example grid bias power supply 141 from 200kHz to 13.56MHz scope bias voltage is connected on the electrostatic chuck 100 by coupling circuit filtration system 142, and control is applied to the bias voltage on the sample 700, is connected on the ground wire by filter 143 simultaneously.In the present embodiment, the frequency of grid bias power supply 141 is 400kHz.
As described above, on electrostatic chuck 100, promptly load samples 700 such as placing wafer on the sample loading surface.Use the plasma-etching apparatus shown in the present embodiment that wafer 700 is implemented etched the time, apply the direct voltage of hundreds of volts～thousands of volts, produce the Coulomb force by the DC power supply 144 used by Electrostatic Absorption and filter 145.In addition, electrostatic chuck 100 is controlled at its surface by not shown temperature control equipment the temperature of regulation.By the gap between the back side of the surface of electrostatic chuck 100 and wafer 700, with the flow and the pressure feed inert gas of regulation, helium for example, the heat that improves between itself and the sample 700 is preached.Thus, just the surface temperature of sample 700 accurately can be controlled in for example about 20 ℃～110 ℃ scope.
The plasma-etching apparatus of present embodiment structure as described above.With this plasma-etching apparatus detailed process when for example silicon being carried out etch process is described.
In Fig. 2, at first after the wafer 700 as process object is sent to process chamber R from not shown sample transport mechanism, with its loading, be adsorbed onto on the electrostatic chuck 100, adjust 100 height of electrostatic chuck as required, wafer 700 is arranged in the predetermined gap.Then, supply with the essential gas of etch processes of sample 700 by not shown gas supply device, for example chlorine and hydrogenation bromine and oxygen, and supply with in process chamber R with the flow and the mixed proportion of regulation.Simultaneously, process chamber R adjusts to predetermined process pressure by vacuum pumping system 106 and pressure control device 107 with pressure.Then, by the electric power of the 450MHz that provides from antenna power 121, and electromagnetic wave is sent from antenna 110.Then, by forming the magnetic field interaction of device 101 in inner about 160 Gausses (corresponding to the electron cyclotron resonace magnetic field intensity of the 450MHz) level that forms of process chamber R with utilizing magnetic field, and in process chamber R, generating plasma P, gas is handled in disassociation, produces ion and atomic group.Also by the antenna substrate bias electric power that provided by antenna grid bias power supply 122 and the substrate bias electric power that provided by the grid bias power supply 141 of lower electrode, the ion in the control plasma, the proportion of composing and the energy of atomic group carry out etch processes to wafer 700.Then, be accompanied by the end of etch processes, stop supply capability, magnetic field and handle gas, etching finishes.
The following describes the method that transports that etching finishes back wafer 700.As previously mentioned, diminish, interrupt conductive film 4a in being applied to Fig. 1 and the direct voltage on the 4b, make the potential difference between conductive film 4a and the 4b diminish just passable in order to make the absorption affinity between wafer and the electrostatic chuck.That is, become 0 in fact by making the potential difference between conductive film 4a and 4b, and wafer 700 is stripped down from passivation aluminium lamination 2a and 2b.Afterwards, use not shown connecting gear that the wafer 700 that strips down is sent to next step operation.
But the potential difference between conductive film 4a and 4b is essentially in 0, also has the wafer absorption affinity still residual, and the situation that is not easy to peel off.Have at wafer 700 under the situation of good electrical conductivity, its reason is that the electric charge that is accumulated on passivation aluminium lamination 2a and the 2b is not neutralized.The absorption affinity between wafer 700 and electrostatic chuck is not reduced to very for a short time, and under the situation about forcibly wafer being stripped down with the wafer mechanism for stripping, probably can the phenomenon that eject takes place in the moment that wafer is stripped from.At this moment, by applying the voltage of opposite polarity when adsorbing to conductive film 4a and 4b, the electric charge of the accumulation that just can neutralize thus, just can have been avoided later the danger that produces because of use wafer mechanism for stripping.
Below, describe the embodiment that relates to electrostatic chuck manufacture method of the present invention in detail.In the present embodiment, at first shown in Fig. 3 (a), form setting and fixing power supply wiring 5a and 5b to connect basis material 6 on the assigned position of basis material 6, be processed between the opening portion with the through hole of itself and basis material 6 do not have the space after, a plane is processed on the surface of basis material 6 and the edge of power supply wiring 5a and 5b.In the present embodiment, the material of basis material 6 is an aluminium oxide, but other insulating material, for example the pottery of aluminium nitride and carborundum etc., quartz etc. also can reach purpose of the present invention.In addition, the material of power supply wiring 5a and 5b is a tungsten, but other electric conducting material also can reach purpose of the present invention.
Below, shown in Fig. 3 (b), on basis material 6, form conductive film 4a and 4b with desirable shape.In the present embodiment, be the material that molybdenum-manganese alloy is fired into conductive film 4a and 4b, and other conductive film, for example the sputtered films of bismuth of various metals and electroplating film also can reach purpose of the present invention.On conductive film 4a and 4b, the form with electric contact disposes power supply wiring 5a and 5b separately.
Shown in Fig. 3 (c), on conductive film 4a and 4b, form aluminium lamination 9a and 9b, and form a plane.In the present embodiment, the method that forms this aluminium lamination is welding, and methods such as for example spraying plating of additive method, plating, welding, crimping also can reach purpose of the present invention.
The thickness of aluminium lamination 9a and 9b is about 100 microns.The flat shape of aluminium lamination 9a and 9b is illustrated in figure 1 as concentric circles and ring-type is also passable, and 2 semicircles also can.And so-called broach shape then can produce absorption affinity to the such insulator of roughing glass.Further, the Surface Machining with aluminium lamination 9a and 9b is that center line is average thick below 0.2 micron.Again chamfering is carried out in the bight of aluminium lamination.This chamfering is split extremely important in the generation of the bight of passivation aluminium film for preventing after the passivation aluminium of back is handled.The shape in aluminium lamination bight is except such chamfering, for example circular-arc also passable.
Below, shown in Fig. 3 (d), implement passivation aluminium on the surface of aluminium lamination 9a and 9b and handle.Applying voltage by power supply wiring 5a and 5b to aluminium lamination 9a, 9b in oxalic acid solution grows up passivation aluminium film.The film generation has just been finished when the thickness of passivation aluminium film 10a and 10b arrives 50 microns in Fig. 3 (d).But remaining the trickle of film thickness direction split in the inside of passivation aluminium film 10a that forms like this and 10b, therefore exposes to the open air in high-temperature water vapor by the passivation aluminium film that will form, and seals inner trickle the splitting that forms of passivation aluminium film 10a and 10b.
The sketch in the cross section of the electrostatic chuck that shown in Figure 4 is makes in order to the top method.Silicon wafer 7 is loaded in this way on the electrostatic chuck of making 1, to power supply wiring 5a and 5b apply separately+500V and-direct voltage of 500V, wafer 7 just has been attracted on the electrostatic chuck.Confirm,, produced the above absorption affinity of 4kPa by the tensile load of wafer 7 on the direction vertical with the adsorption plane of electrostatic chuck 1.Can confirm by above,, can make bipolar electrostatic chuck with good adsorption properties by the method that present embodiment is put down in writing.
Embodiment 3
Below, describe another embodiment that relates to electrostatic chuck of the present invention in detail.What Fig. 5 represented is the model of the electrostatic chuck of present embodiment.In the present embodiment, on the surface of passivation aluminium film 2a and 2b, form insulation film 10 more as shown in Figure 5.Its reason and effect are as follows.Promptly as described in the embodiment 2, all necessarily there be trickle splitting in general passivation aluminium film.So, want when forming passivation aluminium film, making splitting in the film is not very difficult fully.But, in film, exist and split, passivation aluminium film be the proof voltage ability of adsorbed film with regard to step-down, just might produce infringement to the performance of electrostatic chuck.
In order to improve the proof voltage ability of passivation aluminium film, in embodiment 2, after film forms, passivation aluminium film 2a and 2b exposed to the open air and in water vapour, carry out sealing of hole and handle.This handles simple, and truly has effect.Also have according to the inadequate situation of different its effects of occasion.Therefore; as shown in this embodiment; by forming insulating protective film at the passivation aluminium film surface; further improve the proof voltage ability of adsorbed film; can make especially because of the destroyed defective minimizing that causes of insulating; perhaps, also can access bigger absorption affinity by applying higher voltage to power supply wiring 5a and 5b.Or under long-time situation about using, improve the reliability under the Circularly liftable tender feeling condition.
In addition, in the present embodiment, CVD (chemical vapor deposition) film that uses aluminium oxide is as insulation film, and film thickness is 5 microns.Handle by this CVD, make the average proof voltage ability of adsorbed film bring up to about 3kV to about 5kV.On the other hand, handle by this CVD, absorption affinity does not almost change.By above discussion, form insulation film on the surface of passivation aluminium film, for the reliability that improves this electrostatic chuck good effect is arranged.
Embodiment 4
Adjust the temperature of wafer in order to improve the pyroconductivity between wafer and the adsorbed film, be necessary between wafer and adsorbed film, to fill the gases such as helium of authorized pressure sometimes.For this being carried out correspondence, as shown in Figure 6, processing ditch G on the adsorbed film surface, the adsorption plane thickness that is set to stipulate simultaneously can reduce the deviation of the gas pressure between wafer and the adsorbed film.In this situation, be necessary to prevent from the seal construction of crystal wafer back face to vacuum tank internal leakage gas in the outermost edge partial design of electrostatic chuck.In the present embodiment, as shown in Figure 6, be not make the ditch on adsorbed film surface run through outer peripheral structure.
In order to realize such structure, can make pellumina form the desirable shape that can suppress from the outermost edge gas leakage, just can as the shape that is fit in advance with the shape of aluminium lamination 9a in Fig. 3 and 9b.
In addition, aforesaid embodiment 1 and even 4 is the example of form of implementation of the present invention at least, and certainly, these embodiment are not the restriction to electrostatic chuck of the present invention and device.
By the present invention, can make high reliability, easy-to-use bipolar electrostatic chucks such as cheap, proof voltage, the plasma device that has high-freedom degree when using can be provided thus.
Claims (7)
1. plasma processing apparatus has at the plasma generating device of the indoor generation plasma of vacuum treatment and will load in the above electrostatic chuck as the wafer of processed material, it is characterized in that:
The passivation aluminium film that the face of the above-mentioned wafer of absorption of above-mentioned electrostatic chuck generates by aluminium is carried out anodic oxidation constitutes, and the face that adsorbs above-mentioned wafer is the bipolar form of static.
2. plasma processing apparatus according to claim 1 is characterized in that:
The structure of above-mentioned electrostatic chuck is, forms conductor layer on the basic material of insulator, forms aluminium lamination on it again, and with this aluminium lamination anodic oxidation.
3. plasma processing apparatus according to claim 1 is characterized in that:
The structure of above-mentioned electrostatic chuck is, forms conductor layer on the basic material of the insulator that is made of pottery, forms aluminium lamination on it again, and with this aluminium lamination anodic oxidation.
4. plasma processing apparatus according to claim 1 is characterized in that:
On the surface of above-mentioned aluminium lamination, form insulation film again.
5. plasma processing apparatus according to claim 1 is characterized in that:
On the surface of above-mentioned aluminium lamination, form the insulation film that constitutes by pottery again.
6. one kind will be loaded the manufacture method of electrostatic chuck in the above as the wafer of processed material, and the face of described electrostatic chuck absorption wafer forms the bipolar form of static, it is characterized in that may further comprise the steps:
On the matrix surface of insulator, form a plurality of conductive films;
On the surface of above-mentioned a plurality of conductive films, form aluminium lamination; And
Anodized is carried out on surface to above-mentioned aluminium lamination, forms passivation aluminium film.
7. the manufacture method of electrostatic chuck according to claim 6 is characterized in that:
Surface at above-mentioned passivation aluminium film forms the insulation film that is made of pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03106729 CN1278389C (en) | 2003-02-27 | 2003-02-27 | Plasma processing device and making method of electrostatic suction cup |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03106729 CN1278389C (en) | 2003-02-27 | 2003-02-27 | Plasma processing device and making method of electrostatic suction cup |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100076308A Division CN100345274C (en) | 2003-02-27 | 2003-02-27 | Method of producing electrostatic suction cup |
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| CN1525534A true CN1525534A (en) | 2004-09-01 |
| CN1278389C CN1278389C (en) | 2006-10-04 |
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| CN 03106729 Expired - Fee Related CN1278389C (en) | 2003-02-27 | 2003-02-27 | Plasma processing device and making method of electrostatic suction cup |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369215C (en) * | 2005-12-02 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adsorption stripping process for removing exposed zone polymer |
| CN101162685B (en) * | 2006-10-10 | 2010-06-02 | 台湾积体电路制造股份有限公司 | Apparatus and method of semiconductor plasma process |
| CN102150252A (en) * | 2008-09-09 | 2011-08-10 | 高美科株式会社 | Electrostatic chuck comprising a double buffer layer (DBL) to reduce thermal stress |
| TWI511831B (en) * | 2012-01-26 | 2015-12-11 | Kyocera Corp | Electrostatic sucker |
| CN109938726A (en) * | 2019-04-08 | 2019-06-28 | 中国人民解放军陆军特色医学中心 | A kind of electrode fixing device |
| JP2022526327A (en) * | 2019-04-10 | 2022-05-24 | エーエスエムエル ネザーランズ ビー．ブイ． | Stage equipment suitable for particle beam equipment |
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2003
- 2003-02-27 CN CN 03106729 patent/CN1278389C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369215C (en) * | 2005-12-02 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adsorption stripping process for removing exposed zone polymer |
| CN101162685B (en) * | 2006-10-10 | 2010-06-02 | 台湾积体电路制造股份有限公司 | Apparatus and method of semiconductor plasma process |
| CN102150252A (en) * | 2008-09-09 | 2011-08-10 | 高美科株式会社 | Electrostatic chuck comprising a double buffer layer (DBL) to reduce thermal stress |
| CN102150252B (en) * | 2008-09-09 | 2013-08-14 | 高美科株式会社 | Electrostatic chuck comprising double buffer layer (DBL) to reduce thermal stress |
| TWI511831B (en) * | 2012-01-26 | 2015-12-11 | Kyocera Corp | Electrostatic sucker |
| CN109938726A (en) * | 2019-04-08 | 2019-06-28 | 中国人民解放军陆军特色医学中心 | A kind of electrode fixing device |
| CN109938726B (en) * | 2019-04-08 | 2021-07-27 | 中国人民解放军陆军特色医学中心 | Electrode fixing device |
| JP2022526327A (en) * | 2019-04-10 | 2022-05-24 | エーエスエムエル ネザーランズ ビー．ブイ． | Stage equipment suitable for particle beam equipment |
| JP7232935B2 (en) | 2019-04-10 | 2023-03-03 | エーエスエムエル ネザーランズ ビー．ブイ． | Stage equipment suitable for particle beam equipment |
| US11908656B2 (en) | 2019-04-10 | 2024-02-20 | Asml Netherlands B.V. | Stage apparatus suitable for a particle beam apparatus |
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|---|---|
| CN1278389C (en) | 2006-10-04 |
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Granted publication date: 20061004 |