CN1522099A - An active organic electroluminescent display and making method thereof - Google Patents
An active organic electroluminescent display and making method thereof Download PDFInfo
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Abstract
An active driving organic electroluminescent display and process for making the same, wherein the display comprises, a substrate, a plurality of transistors formed on the substrate as the control circuit of the display, a first coating layer consisting of dielectic material formed on the substrate and the transistors, a second coating layer consisting of organic material formed on the first coating layer, a pixel electrode formed in a predetermined area of the pixel electrode, an insulation layer formed at least on the two side walls of the pixel electrode and on the second coating layer, an organic light-emitting diode material layer, and a sheet metal formed on the organic light-emitting diode material layer as its cathode.
Description
Technical field
The present invention relates to relevant active organic electroluminescent (AM-OLED) display and manufacture method, being particularly related to a kind of active organic electroluminescent (AM-OLED) display and manufacture method of improving anode layer at transparent layer roughness structure that have, is a kind of active organic electroluminescent display and preparation method thereof concretely.
Background technology
Organic Light Emitting Diode (OLED; Organic light emitting diode) for using the light-emitting diode of organic layer as active layers (active layer), gradually, be used in recent years on the flat panel display (flat panel display), can divide into passive type organic electric-excitation luminescent (PM-OLED) and active organic electroluminescent (AM-OLED) display according to type of drive.The principle of luminosity of active organic electroluminescent (AM-OLED) display is to add electric current so that electric energy converts luminous energy in specific organic film lamination, it has advantages such as the luminous feature of face, self luminous high-luminous-efficiency and low driving voltage, and has the characteristic of wide viewing angle, high contrast, high answer speed, full-colorization and deflectionization.In the making as for the TFT assembly, can adopt polysilicon (poly-silicon), amorphous silicon (amorphoussilicon, a-Si:H) or organic semiconducting materials.
Indium tin oxide (Indium Tin Oxide, ITO) because of its work function height, have the favorable conductive degree and in the high grade of transparency of visible-range by widely as the anode of active organic electroluminescent (AM-OLED) display module.And indium tin oxide is during as the anode of active organic electroluminescent (AM-OLED) display module, and its surperficial roughness (roughness) is enough to the characteristic and the life-span of left and right sides organic EL component.The roughness of anode layer at transparent layer can influence the photoelectric characteristic of organic EL component, if the layer at transparent layer roughness is higher, certainly will reduce the luminous efficiency of organic EL component, and can cause that the most advanced and sophisticated meeting of irregular indium tin oxide produces the effect of point discharge, make organic layer breakdown, cause the organic EL component short circuit.
Indium tin oxide ITO surface roughness is influenced by the roughness of its production method and carrier layer (under layer) thereof.Utilize sputtering method to form indium tin oxide (ITO) transparency conducting layer at present, the roughness on its indium tin oxide (ITO) surface can reach below the 1nm.Indium tin oxide (ITO) directly can be formed at smooth glass (or directly using indium tin oxide glass (ITO-glass)) unlike passive type organic electric-excitation luminescent (PM-OLED) assembly, in the making of active organic electroluminescent (AM-OLED) display module, indium tin oxide is formed on the carrier layer (under layer) usually, so the roughness on indium tin oxide (ITO) surface mainly is to be subjected to its carrier layer (under layer) to influence.In the making of active organic electroluminescent (AM-OLED) display module, generally be heat-resisting to have, transparent and the insulation organic material as separator, again that indium tin oxide (ITO) electrode is formed thereon.But because the not good relation of organic material surface smoothness, make its surface average roughness of transparency conducting layer formed thereon (roughness average, Ra) up to 3-4nm, the three-to-four-fold that is about general transparency conducting layer applied code (the about 1nm of mean roughness), the serious luminous efficiency that reduces organic EL component, its irregular tip more can cause the point discharge effect, makes organic layer breakdown, causes this picture element short circuit.
Summary of the invention
The purpose of this invention is to provide a kind of active organic electroluminescent display, replace tradition with insulating barrier (dielectric material) and utilize the method for organic material (organic material) as transparency conducting layer (similarly being ITO) carrier layer (under layer), make its surface average roughness of transparency conducting layer (roughness average to solve organic material as the transparency conducting layer carrier layer, Ra) increase, cause the luminous efficiency (characteristic) of organic EL component to descend and problem such as leakage current.
Another object of the present invention provides the manufacture method of active organic electroluminescent display of the present invention, to form an active organic electroluminescent display with transparency conducting layer of low surface average roughness.
Technical scheme of the present invention is: a kind of active organic electroluminescent display is characterized in that: comprise at least:
A substrate;
A plurality of transistors are formed on this substrate, as the control circuit of described organic electro-luminescent display;
First coating layer that is made of dielectric material is formed on described substrate and this transistor;
Second coating layer that is made of organic material is formed on this first coating layer, and described second coating layer defines a pixel electrode fate on first coating layer;
Pixel electrode is formed at the pixel electrode fate on described first coating layer;
An insulating barrier is formed at described pixel electrode both sides sidewall at least;
An Organic Light Emitting Diode material layer is formed on the surface that described pixel electrode do not cover by described insulating barrier at least; And a metal level, be formed on the described Organic Light Emitting Diode material layer.
Described pixel electrode is coupled to described transistor.
Described substrate is the glass or the plastic base of printing opacity.
The dielectric material that constitutes described first coating layer is selected in the group that oxide, carbide, nitride and the composition thereof of insulation are formed, and is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x).
Described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).
The described organic material that constitutes described second coating layer is acrylic resin (Acrylicresin), Polyimide (polyimide) or transparent photoresist.
Described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material.
A kind of manufacture method of active organic electroluminescent display is characterized in that, comprises the following step at least:
A substrate is provided;
Form a plurality of transistors on described substrate, as the control circuit of described organic electro-luminescent display;
Form one by first coating layer that dielectric material constituted on described substrate;
Form one second coating layer on this first coating layer, and remove partly second coating layer, on this first coating layer, to define a pixel electrode fate with the etching of cover curtain;
Form the described pixel electrode fate of a pixel electrode on described first coating layer, and be coupled to described transistor;
At least form an insulating barrier on described pixel electrode, and reserve the some of described pixel electrode, to form an Organic Light Emitting Diode material layer fate;
At least form an Organic Light Emitting Diode material layer in this Organic Light Emitting Diode material layer fate; And form a metal level on described Organic Light Emitting Diode material layer.
The step that forms described first coating layer more comprises uses the cmp processing procedure that planarization is carried out on the surface of described first coating layer.
The dielectric material that constitutes described first coating layer can be selected from the group that oxide, carbide, nitride and the composition thereof of insulation are formed, and is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x).
Described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).
Forming a production method by first coating layer that dielectric material constituted is sputter or electricity slurry reinforcement formula chemical vapour deposition (CVD) mode.
The organic material that constitutes described second coating layer is acrylic resin (acrylic resin), Polyimide (polyimide) or transparent photoresist.
Described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material.
Beneficial effect of the present invention is: utilize the carrier layer (under layer) of organic material (organic material) as transparency conducting layer (for example ITO) by replacing tradition with insulating barrier (dielectric material), make this layer at transparent layer mean roughness (roughness average, Ra) reduction (is reduced to below the 1.5nm, for use organic material as the transparency conducting layer carrier layer 1/2 to below 1/3), to obtain being fit to low surface average roughness transparency conducting layer, solve organic material and cause the luminous efficiency of organic EL component to descend as the transparency conducting layer carrier layer and problem such as leakage current as active organic electroluminescent (AM-OLED) display module anode.
Description of drawings
Fig. 1 (a) for be presented under the glass (not having carrier layer) with atomic force microscope (atomic forcemicroscope AFM) observes the aspect graph on ITO surface (ITO thickness is 750 ),
Fig. 1 (b) for be presented under the silica carrier layer with atomic force microscope (atomic forcemicroscope AFM) observes the aspect graph on ITO surface (ITO thickness is 750 ),
Fig. 1 (c) for be presented under the silicon nitride carrier layer with atomic force microscope (atomic forcemicroscope AFM) observes the aspect graph on ITO surface (ITO thickness is 750 ),
Fig. 1 (d) for be presented under organic material A (PC403) carrier layer with atomic force microscope (atomicforce microscope AFM) observes the aspect graph on ITO surface (ITO thickness is 750 ),
Fig. 1 (e) for be presented under organic material B (PC415) carrier layer with atomic force microscope (atomicforce microscope AFM) observes the aspect graph on ITO surface (ITO thickness is 750 ),
Fig. 2 (a) is for being presented under the glass (not having carrier layer) with atomic force microscope (atomic forcemicroscope, AFM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 2 (b) is for being presented under the silica carrier layer with atomic force microscope (atomic forcemicroscope, AFM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 2 (c) is for being presented under the silicon nitride carrier layer with atomic force microscope (atomic forcemicroscope, AFM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 2 (d) is for being presented under organic material A (PC403) carrier layer with atomic force microscope (atomicforce microscope, AFM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 2 (e) is for being presented under organic material B (PC415) carrier layer with atomic force microscope (atomicforce microscope, AFM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 3 (a) is for being presented under the glass (not having carrier layer) with sweep electron microscope (ScanningElectron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 750 );
Fig. 3 (b) is for being presented under the silica carrier layer with sweep electron microscope (Scanning ElectronMicroscope, SEM) aspect graph on observation ITO surface (ITO thickness is 750 );
Fig. 3 (c) is for being presented under the silicon nitride carrier layer with sweep electron microscope (Scanning ElectronMicroscope, SEM) aspect graph on observation ITO surface (ITO thickness is 750 );
Fig. 3 (d) is for being presented under organic material A (PC403) carrier layer with sweep electron microscope (Scanning Electron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 750 );
Fig. 3 (e) is for being presented under organic material B (PC415) carrier layer with sweep electron microscope (Scanning Electron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 750 );
Fig. 4 (a) is presented under the different carrier layers to Fig. 4 (e) that (ScanningElectron Microscope SEM) observes the aspect graph on ITO surface (ITO thickness is 1500 ) with sweep electron microscope;
Fig. 4 (a) is for being presented under the glass (not having carrier layer) with sweep electron microscope (ScanningElectron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 4 (b) is for being presented under the silica carrier layer with sweep electron microscope (Scanning ElectronMicroscope, SEM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 4 (c) is for being presented under the silicon nitride carrier layer with sweep electron microscope (Scanning ElectronMicroscope, SEM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 4 (d) is for being presented under organic material A (PC403) carrier layer with sweep electron microscope (Scanning Electron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 4 (e) is for being presented under organic material B (PC415) carrier layer with sweep electron microscope (Scanning Electron Microscope, SEM) aspect graph on observation ITO surface (ITO thickness is 1500 );
Fig. 5 (a) is to the making flow chart of Fig. 5 (f) for demonstration active organic electroluminescent display of the present invention;
Fig. 6 is formed at active organic electroluminescent display tradition method for making assembly assumption diagram on the organic material for showing with pixel electrode (being the anode of organic electric exciting light-emitting diode, is a transparency conducting layer);
Fig. 7 is for showing active organic electroluminescent display method for making of the present invention, with the different assembly assumption diagram of traditional method for making (Fig. 6);
Fig. 8 (a) shows structure of the present invention to Fig. 8 (c), as shown in Figure 7, and electron microscope (Scanning Electron Microscope, the SEM) aspect graph on the cathodic metal surface in its a, b and c three zones;
Symbol description
The 10-substrate;
The 20-transistor;
The transistorized drain of 21-;
The 30-resilient coating;
The 32-gate insulation layer;
34-first coating layer;
36-second coating layer;
The 38-upper insulation layer;
40-Organic Light Emitting Diode material layer;
45-Organic Light Emitting Diode material layer fate;
50-pixel electrode (transparency conducting layer);
The cathodic metal layer of 52-Organic Light Emitting Diode;
55-pixel electrode fate;
The 60-resilient coating;
The 62-gate insulation layer;
64-first coating layer;
66-second coating layer;
The 68-upper insulation layer;
The 70-transparency conducting layer;
The cathodic metal layer of 72-Organic Light Emitting Diode;
80-Organic Light Emitting Diode material layer;
The 100-substrate;
The 200-transistor;
The transistorized drain of 210-.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described:
A kind of active organic electroluminescent display is characterized in that: comprise at least:
A substrate;
A plurality of transistors, be formed at this substrate on, as the control circuit of described organic electro-luminescent display;
First coating layer that constitutes by dielectric material be formed at described substrate and this transistorized on;
Second coating layer that is made of organic material is formed on this first coating layer, and described second coating layer defines a pixel electrode fate on first coating layer;
Pixel electrode is formed at the pixel electrode fate on described first coating layer;
An insulating barrier is formed at described pixel electrode both sides sidewall at least;
An Organic Light Emitting Diode material layer is formed on the surface that described pixel electrode do not cover by described insulating barrier at least; And a metal level, be formed on the described Organic Light Emitting Diode material layer;
Described pixel electrode is coupled to described transistor;
Described substrate is the glass or the plastic base of printing opacity;
The dielectric material that constitutes described first coating layer is selected in the group that oxide, carbide, nitride and the composition thereof of insulation are formed, and is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x);
Described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO);
The described organic material that constitutes described second coating layer is acrylic resin (Acrylicresin), Polyimide (polyimide) or transparent photoresist;
Described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material;
A kind of manufacture method of active organic electroluminescent display is characterized in that, comprises the following step at least:
A substrate is provided;
Form a plurality of transistors on described substrate, as the control circuit of described organic electro-luminescent display;
Form one by first coating layer that dielectric material constituted on described substrate;
Form one second coating layer on this first coating layer, and remove partly second coating layer, on this first coating layer, to define a pixel electrode fate with the etching of cover curtain;
Form the described pixel electrode fate of a pixel electrode on described first coating layer, and be coupled to described transistor;
At least form an insulating barrier on described pixel electrode, and reserve the some of described pixel electrode, to form an Organic Light Emitting Diode material layer fate;
At least form an Organic Light Emitting Diode material layer in this Organic Light Emitting Diode material layer fate; And form a metal level on described Organic Light Emitting Diode material layer;
The step that forms described first coating layer comprises that more using cmp to make carries out planarization to the surface of described first coating layer;
The dielectric material that constitutes described first coating layer is to select from the group that oxide, carbide, nitride and the composition thereof of insulation are formed, and is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x);
Described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO);
Forming a production method by first coating layer that dielectric material constituted is with sputter or electricity slurry reinforcement formula chemical vapour deposition (CVD) mode;
The organic material that constitutes described second coating layer is acrylic resin (acrylic resin), Polyimide (polyimide) or transparent photoresist;
Described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material.
The present invention system provides a kind of active organic electroluminescent display, replace tradition with insulating barrier (dielectric material) and utilize the method for organic material (organic material) as transparency conducting layer (similarly being ITO) carrier layer (under layer), cause its surface average roughness of transparency conducting layer (roughness average to solve organic material as the carrier layer of transparency conducting layer, Ra) increase, cause the luminous efficiency of organic EL component to descend and problem such as leakage current.
When any different carrier layer (under layer) that is formed at transparency conducting layer ITO goes up, its penetrance almost is with not to be formed at carrier layer (only being formed at clear glass) the same, yet the mean roughness on transparency conducting layer ITO surface (roughness average, Ra) but can because of its carrier layer (under layer) different with change.Respectively transparency conducting layer ITO is formed at glass (promptly not having carrier layer) in sputter (sputtering) mode, silica (SiOx, dielectric material), silicon nitride (SiNx, dielectric material), organic material A (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber is numbered PC403) and organic material B (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber numbering PC415) on, when the thickness of transparency conducting layer ITO is set at 750 , the mean roughness on ITO surface (roughness average, Ra) as shown in table 1 with the relation of different carrier layers (under layer) (or not having carrier layer);
| Carrier layer | The mean roughness (nm) on surface |
| Glass (not having carrier layer) | 0.99 |
| Silica | 0.86 |
| Silicon nitride | 0.61 |
| Organic material A | 3.08 |
| Organic material B | 3.67 |
| The ito glass that PMOLED is used | 0.78 |
Table 1: the relation of its surperficial mean roughness (Ra) of transparency conducting layer ITO (during thickness 750 ) and different carrier layers;
And when the thickness of transparency conducting layer ITO is set at 1500 , the mean roughness on ITO surface (roughness average, Ra) as shown in table 2 with the relation of different carrier layers (under layer) (or not having carrier layer).
| Carrier layer | The mean roughness (nm) on surface |
| Glass (not having carrier layer) | 1.36 |
| Silica | 1.47 |
| Silicon nitride | 1.27 |
| Organic material A | 3.42 |
| Organic material B | 3.63 |
Table 2: the relation of its surperficial mean roughness (Ra) of transparency conducting layer ITO (during thickness 1500 ) and different carrier layers
By table 1 and table 2 as can be known, at transparency conducting layer ITO thickness is 750 , the surface average roughness (Ra) of transparency conducting layer ITO on dielectric material such as silica and silicon nitride is about 0.86nm and 0.61nm, and the surface average roughness that transparency conducting layer ITO is formed at (no matter being organic material A or organic material B) gained on the organic material is much lower above 3nm.When same characteristic also occurs in transparency conducting layer ITO thickness and is 1500 (surface average roughness was also high more when the ITO thickness was thick more), ITO is formed at surface average roughness on silica and the silicon nitride more than the surface average roughness that transparency conducting layer ITO is formed at (no matter being organic material A or organic material B) gained on the organic material much lower (be formed at surface average roughness on the dielectric material be about be formed at 1/2 on the organic material to 1/3).Fig. 1 (a) is presented to Fig. 1 (e) and Fig. 2 (a) to Fig. 2 (e) under the different carrier layers that (atomic force microscope AFM) observes the situation of its surface topography of transparency conducting layer ITO (surface morphology) respectively with atomic force microscope.Learn by knowing among the figure; no matter be when the electrically conducting transparent layer thickness is 750 or 1500 , it is better more than the surface smoothness that transparency conducting layer ITO is formed at (as the aspect graph of Fig. 1 (d), Fig. 1 (e), Fig. 2 (d) and Fig. 2 (e)) on the organic material that transparency conducting layer ITO is formed at the surface smoothness of (as the aspect graph of Fig. 1 (b), Fig. 1 (c), Fig. 2 (b) and Fig. 2 (c)) on silica and the silicon nitride.Fig. 3 (a) is also shown under the different carrier layers with sweep electron microscope (Scanning Electron Microscope to Fig. 3 (e) and Fig. 4 (a) to Fig. 4 (e), SEM) observe the situation of transparency conducting layer ITO respectively, prove that similarly transparency conducting layer ITO is formed at the last replacement of dielectric material (as silica and silicon nitride) to be formed on the organic material, can improve transparency conducting layer ITO surface average roughness greatly.
From the above mentioned, transparency conducting layer ITO is formed at improves transparency conducting layer ITO surface average roughness on silica and the silicon nitride as can be known.The present invention introduces this structure in active organic electroluminescent (AM-OLED) display module.
Specific embodiment is as follows:
At first, provide a substrate 10, please refer to Fig. 5 (a).This substrate is a transparency carrier, can be the glass or the plastic material of printing opacity.If plastic base, its material can be polyethylene terephthaldehyde ester (polyethyleneterephthalate), polyester (polyester), Merlon (polycarbonates), polyacrylate (polyacrylates) or polystyrene (polystyrene).On this substrate 10, form resilient coating (buffer layer) 30, and on resilient coating 30, form gate insulation layer 32 and a plurality of transistor 20, with control circuit as this organic electro-luminescent display.This transistor is that (thin film transistor TFT), can be polycrystalline SiTFT, amorphous silicon film transistor or OTFT to thin-film transistor.Then, form one by first coating layer 34 that dielectric material constituted in the surface in this substrate crystal pipe and other zone, expose transistor and desire the drain 21 that joins with pixel electrode.At this, form a method and can be sputter (sputtering) or electricity slurry reinforcement formula chemical vapour deposition (CVD) (PECVD) mode by first coating layer 34 that dielectric material constituted.And the dielectric material that can be used as first coating layer 34 is to select from the group that oxide, carbide, nitride and the composition thereof of insulation are formed, for example silica (SiOx), aluminium oxide (AlOx), magnesium oxide (MgO), silicon nitride (SiNx), aluminium nitride (AlNx) or magnesium fluoride (MgFx) etc.
Shown in Fig. 5 (b), forming second coating layer 36 on first coating layer 34 and on the transistor drain 21 desiring to join with pixel electrode, this second coating layer 36 is an organic material, can from acrylic resin (Acrylic resin), Polyimide (polyimide) or transparent resistance material, select, can utilize sensitization or heating to make its curing.Then defining pixel electrode (is the anode of organic electric exciting light-emitting diode, be a transparency conducting layer) fate 55, utilize etching mode with first coating layer 34 as etching stopping layer, remove partly second coating layer 36 (being organic material), expose pixel electrode fate 55, please refer to Fig. 5 (c).Wherein removing partly, the etching mode of second coating layer 36 can be dry ecthing or wet etching mode.Utilize shielding (mask), define in the pixel electrode fate 55 of pixel electrode 50 (being the anode of organic electric exciting light-emitting diode, is a transparency conducting layer) on first coating layer 34, and be coupled to the drain 21 of above-mentioned transistor 20, shown in Fig. 5 (d).This pixel electrode 50 can be indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).And this pixel electrode 50 (by transparent material) can be formed by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
Shown in Fig. 5 (e), then form a upper insulation layer (top-insulator) 38 on this pixel electrode 50, again with pixel electrode 50 as etching stopping layer, to these insulating barrier 38 etchings, define the Organic Light Emitting Diode material layer fate 45 on this pixel electrode 50, reserve pixel electrode 50 bottom positions, and be formed with OLED material layer 40 thereon.This Organic Light Emitting Diode material layer 40 can be micromolecule or macromolecule Organic Light Emitting Diode material, if micromolecule Organic Light Emitting Diode material can utilize the vacuum evaporation mode to be formed with the OLED material layer; If macromolecule Organic Light Emitting Diode material then can use modes such as rotary coating, ink-jet or screen painting to be formed with the OLED material layer.
At last, shown in Fig. 5 (f), on Organic Light Emitting Diode material layer 40, form the negative electrode of a metal level 52 as this Organic Light Emitting Diode.The mode that forms this metal level 52 can be vacuum thermal evaporation or sputtering way.The material of this metal negative electrode can be selected from the metal material or the composite material of Ca, Ag, Mg, Al, Li and other low working function.
Accepted practice is that pixel electrode 70 (being the anode of organic electric exciting light-emitting diode, is a transparency conducting layer) is formed at (just said second coating layer) on the organic material 66 here, and its structure as shown in Figure 6.For obviously distinguishing the difference of embodiments of the invention and conventional art, here we are with organic material A (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber is numbered PC403) and organic material B (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber numbering PC415) as the organic material in active organic electroluminescent (AM-OLED) display device structure as shown in Figure 6, measure its luminous efficiency, with the assembly (its structure as shown in Figure 7) of the above-mentioned practice gained of the present invention, its luminous efficiency does one relatively again.Carrier layer at the transparency conducting layer ITO that does with silica (SiOx) or silicon nitride dielectric materials such as (SiNx), (efficiency compares much at one with the assembly of no carrier layer (glass substrate) cd/A) that (efficient can reach 17.2Cd/m during as carrier layer with silica to its luminous efficiency
2, do not have the assembly of carrier layer to be about 17.6Cd/m
2), and with organic material A (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber is numbered PC403) and organic material B (heat-resisting transparent insulating substrate, JSR Japan synthetic rubber numbering PC415) assembly of the carrier layer of the transparency conducting layer ITO that does is compared, not only luminous efficiency is higher, and assembly life-span is also longer.Its main cause is to be the carrier layer of transparency conducting layer ITO with the dielectric material, follows with the organic material carrier layer and compares, and can improve the surface roughness (nm) of transparency conducting layer ITO.
8a figure to the 8c figure also demonstrates cathodic metal surface SEM (the Scanning Electron Microscope in structure of the present invention (as shown in Figure 7) a, b and c three zones respectively, sweep electron microscope) figure, also can know thus find out with dielectric material comparatively smooth as the surface of carrier layer (Fig. 8 (a)) gained.
Beneficial effect of the present invention is: utilize the carrier layer (under layer) of organic material (organic material) as transparency conducting layer (similarly being ITO) by replacing tradition with insulating barrier (dielectric material), make this layer at transparent layer mean roughness (roughness average, Ra) reduction (is reduced to below the 1.5nm, for use organic material as the transparency conducting layer carrier layer 1/2 to below 1/3), to obtain being fit to low surface average roughness transparency conducting layer, solve organic material and cause the luminous efficiency of organic EL component to descend as the transparency conducting layer carrier layer and problem such as leakage current as active organic electroluminescent (AM-OLED) display module anode.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.
Claims (14)
1. active organic electroluminescent display is characterized in that: comprise at least:
A substrate;
A plurality of transistors are formed on this substrate, as the control circuit of described organic electro-luminescent display;
First coating layer that is made of dielectric material is formed on described substrate and this transistor;
Second coating layer that is made of organic material is formed on this first coating layer, and described second coating layer defines a pixel electrode fate on first coating layer;
Pixel electrode is formed at the pixel electrode fate on described first coating layer;
An insulating barrier is formed at described pixel electrode both sides sidewall at least;
An Organic Light Emitting Diode material layer is formed on the surface that described pixel electrode do not cover by described insulating barrier at least; And a metal level, be formed on the described Organic Light Emitting Diode material layer.
2. active organic electroluminescent display according to claim 1 is characterized in that described pixel electrode is coupled to described transistor.
3. active organic electroluminescent display according to claim 1 is characterized in that, described substrate is the glass or the plastic base of printing opacity.
4. active organic electroluminescent display according to claim 1, it is characterized in that, the dielectric material that constitutes described first coating layer is selected from the group that oxide, carbide, nitride and the composition thereof of insulation are formed, and is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x).
5. active organic electroluminescent display according to claim 1, it is characterized in that, described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).
6. active organic electroluminescent display according to claim 1, it is characterized in that the described organic material that constitutes described second coating layer is acrylic resin (Acrylicresin), Polyimide (polyimide) or transparent photoresist.
7. active organic electroluminescent display according to claim 1 is characterized in that, described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material.
8. the manufacture method of an active organic electroluminescent display is characterized in that, comprises the following step at least:
A substrate is provided;
Form a plurality of transistors on described substrate, as the control circuit of described organic electro-luminescent display;
Form one by first coating layer that dielectric material constituted on described substrate;
Form one second coating layer on this first coating layer, and remove partly second coating layer, on this first coating layer, to define a pixel electrode fate with the etching of cover curtain;
Form the described pixel electrode fate of a pixel electrode on described first coating layer, and be coupled to described transistor;
At least form an insulating barrier on described pixel electrode, and reserve the some of described pixel electrode, to form an Organic Light Emitting Diode material layer fate;
At least form an Organic Light Emitting Diode material layer in this Organic Light Emitting Diode material layer fate; And form a metal level on described Organic Light Emitting Diode material layer.
9. the manufacture method of active organic electroluminescent display according to claim 8 is characterized in that, the step that forms described first coating layer comprises that more using cmp to make carries out planarization to the surface of described first coating layer.
10. the manufacture method of active organic electroluminescent display according to claim 8, it is characterized in that, the dielectric material that constitutes described first coating layer is to select the group that forms of oxide, carbide, nitride and the composition thereof from insulation, is roughly silica (SiO
x), aluminium oxide (AlO
x), magnesium oxide (MgO), silicon nitride (SiN
x), aluminium nitride (AlN
x) or magnesium fluoride (MgF
x).
11. the manufacture method of active organic electroluminescent display according to claim 8, it is characterized in that, described pixel electrode is an electrically conducting transparent material, is indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).
12. the manufacture method of active organic electroluminescent display according to claim 8 is characterized in that, forming a production method by first coating layer that dielectric material constituted is with sputter or electricity slurry reinforcement formula chemical vapour deposition (CVD) mode.
13. the manufacture method of active organic electroluminescent display according to claim 8, it is characterized in that the organic material that constitutes described second coating layer is acrylic resin (acrylicresin), Polyimide (polyimide) or transparent photoresist.
14. the manufacture method of active organic electroluminescent display according to claim 8 is characterized in that, described Organic Light Emitting Diode material layer is micromolecule or macromolecule Organic Light Emitting Diode material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421234C (en) * | 2005-10-14 | 2008-09-24 | 统宝光电股份有限公司 | Method for mfg. organic LED array substrate |
| US7443095B2 (en) | 2004-10-15 | 2008-10-28 | Samsung Sdi Co., Ltd. | Organic light emitting display |
| CN101156244B (en) * | 2005-03-31 | 2011-02-02 | 3M创新有限公司 | Methods of making displays |
| TWI642047B (en) * | 2018-01-26 | 2018-11-21 | 鼎展電子股份有限公司 | Flexible micro-led display module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| JP4054561B2 (en) * | 2000-10-26 | 2008-02-27 | 株式会社半導体エネルギー研究所 | Deposition method |
| SG143946A1 (en) * | 2001-02-19 | 2008-07-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
-
2003
- 2003-02-11 CN CNB031026052A patent/CN100358169C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7443095B2 (en) | 2004-10-15 | 2008-10-28 | Samsung Sdi Co., Ltd. | Organic light emitting display |
| CN101156244B (en) * | 2005-03-31 | 2011-02-02 | 3M创新有限公司 | Methods of making displays |
| CN100421234C (en) * | 2005-10-14 | 2008-09-24 | 统宝光电股份有限公司 | Method for mfg. organic LED array substrate |
| TWI642047B (en) * | 2018-01-26 | 2018-11-21 | 鼎展電子股份有限公司 | Flexible micro-led display module |
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| Publication number | Publication date |
|---|---|
| CN100358169C (en) | 2007-12-26 |
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