CN1519286A - Slurry for mechanical polishing (CMP) of metals and use thereof - Google Patents

Slurry for mechanical polishing (CMP) of metals and use thereof Download PDF

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Publication number
CN1519286A
CN1519286A CNA031549551A CN03154955A CN1519286A CN 1519286 A CN1519286 A CN 1519286A CN A031549551 A CNA031549551 A CN A031549551A CN 03154955 A CN03154955 A CN 03154955A CN 1519286 A CN1519286 A CN 1519286A
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China
Prior art keywords
paste compound
sulfate
sodium
polishing
copper
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Granted
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CNA031549551A
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Chinese (zh)
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CN1240112C (en
Inventor
M・T・布雷格汉姆
M·T·布雷格汉姆
加纳帕利
D·F·加纳帕利
科布
M·A·科布
戴维斯
W·库特
艾丝泰斯
K·M·戴维斯
乔丹
S·A·艾丝泰斯
汉纳
E·J·乔丹
锸材
J·W·汉纳
洛夫罗
M·克里什南
麦克唐纳德
M·F·洛夫罗
谢弗
M·J·麦克唐纳德
斯卢舍
D·A·谢弗
托纳罗
G·J·斯卢舍
怀特
J·A·托纳罗
E·J·怀特
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International Business Machines Corp
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International Business Machines Corp
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Priority claimed from US10/231,047 external-priority patent/US6812193B2/en
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Publication of CN1519286A publication Critical patent/CN1519286A/en
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Publication of CN1240112C publication Critical patent/CN1240112C/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Description

Be used for the slurry and the use thereof of the chemically machinery polished (CMP) of metal
Technical field
The present invention relates to especially to can be used for to polish or the paste compound of flat surface.The present invention especially can be used for polishing or the smooth copper that is used as interconnection line in integrated circuit (IC)-components, and this integrated circuit (IC)-components for example is the semiconductor wafer that comprises copper Damascus (damascene) and dual damascene parts.The invention still further relates to the glossing that adopts composition of the present invention.
Background technology
In semi-conductor industry, in the manufacturing processed of unicircuit, do not polish, so that smooth related structure and/or remove undesired material to generally there being abrasive surface.The polishing that is comprised is chemically machinery polished (CMP).For example, smooth metal as aluminium, copper and tungsten etc.In addition, below aluminium, copper or tungsten, generally have refractory metal liner, with provide and insulator underlying between excellent adhesion and with the excellent contact resistance of low layer metallization (moralization).This liner can be independent niobium, tantalum and titanium, perhaps with their combination of nitride or any other refractory metal.The alloy of recently having developed copper and copper is particularly useful for VLSI and ULSI semi-conductor chip as chip interconnect/wiring material.
With aluminium and alloy phase ratio thereof, use copper and copper alloy to improve the performance of device.
In the manufacturing of semiconducter device, the interconnect materials of wire structures for example copper or its alloy begins generally to be all thick electrodeposited film (blanketelectrodeposited film) on the medium layer that this medium layer has the groove structure that etches in its surface.Pre-etched gap or groove in the sedimentary copper film filled media of institute stay excess metal that must be removed, on the wafer surface.In case removed unnecessary metal, just on wafer surface, stayed the metal wiring structure of inlaying.This technology is called Damascus technics.Usually, chemically machinery polished (CMP) comprises the circle/orbiting that utilizes the polishing underlay soak the conventional polishing slurries of having satisfied, done at the overdraft lower wafer of control.Utilize this mode, finished the leveling again of the removing of excess metal, wafer surface.Recently, in CMP technology, use the polishing underlay that is soaked with suitable abrasive particle.Explanation about chemically machinery polished please refer to United States Patent(USP) Nos. 4,671 in more detail, and 851,4,910,155 and 4,944,836, introduce above-mentioned document here as a reference.
The polishing slurries that is used for the CMP of metal generally is an aqeous suspension, comprises metal oxide abrasive for example aluminium sesquioxide or silicon-dioxide, organic acid, tensio-active agent, inner complex and suitable oxygenant.The effect of abrasive is to be convenient to remove material by mechanical effect.Oxygenant is strengthened machinery by the corrosion booster action and is removed effect.Employed this on market, can buy or proprietary slurries in oxygenant generally be for example FeNO of the inorganic metal salt that exists with big concentration 3Perhaps KIO 3And hydrogen peroxide.Existing cooperation or sequestrant prevent that free copper ion from piling up in the slurry in processing, and this accumulation can cause liner to pollute and increase the reactivity of oxygenant.These additives improve the polishing performance of CMP slurry usually.
A feature about present Cu chemical mechanical polishing slurry is, this polishing slurries generally provide the 200-500 dust/minute polishing velocity.For example referring to United States Patent (USP) 5,954,997,6,117,775 and 6,126,853.Improving mechanical parameter for example brings up to overdraft for example up to about 6 pounds/inch 2Can provide the 1500-1700 dust/minute polishing velocity.Yet even with such speed, the Cu that will remove 1 to 2 micron during online rear end (Black End Of theLine (BEOL)) uses also needs quite long polishing time.When polishing on will wafer, do not wish to use the overdraft of increase, because can cause the increase of Cu depression like this at Butut.
Therefore, be desirable to provide a kind of method that is used to polish Cu, this method can overcome depression and etching problem.In addition, this glossing also should be avoided the copper surface of swiping, and the influence that this copper surface is subject to swipe is because it is quite soft.In addition, with respect to any cushioning material that contacts with Cu, this polishing slurries should provide high selectivity to Cu.
And technology as a setting is at people's such as Landers US5,676,587, name is called the description that can find selection polishing and CMP in " Selective Polish Process for Titanium, TitaniumNitride; Tantalum Nitride ", is incorporated herein by reference here.
Summary of the invention
The invention provides have remarkable increase polishing velocity for example at least approximately the 8000-9000 dust/minute and do not need (6 pounds/inch of quite high overdraft 2Perhaps higher) paste compound.Therefore, the invention provides the polishing time of obvious minimizing.The invention provides a kind of slurry, this slurry can utilize low overdraft work, makes depression and the oxide etch minimum of Cu in the CMP process.
In addition, the invention provides a kind of slurry, select by the discretion to the said composition composition, this slurry provides than Ta, TaN, Ti, TiN, W and combination thereof and other cushioning material and has compared the high selectivity of Cu.Especially, the present invention relates to a kind of paste compound, comprise abrasive particle; Oxidation and chloride-ion source and source of sulfate ions.
The invention still further relates to glazed surface, being included in to provide top disclosed slurry on the polished surface; By contact this surface of polishing with polishing underlay.
Pass through following detailed, other purpose of the present invention and advantage will be conspicuous for those skilled in the art, in the following description, by the enforcement optimal mode of the present invention of explanation expection, illustrate and described most preferred embodiment of the present invention simply.It should be understood that the present invention can implement with different embodiment with other, and do not leaving under the situation of the present invention that several details of the present invention can be made amendment aspect conspicuous at each.Therefore, this is described nature and should think illustrative and not restrictive.
Description of drawings
Fig. 1 has shown the functional arrangement of the variation of copper polishing velocity for various compositions as overdraft;
Fig. 2 and 3 has shown the functional arrangement of the variation of copper polishing velocity for different compositions as concentration.
Implement the best of the present invention and various pattern
Paste compound of the present invention comprises oxygenant.Suitable oxygenant comprises the oxidisability metal-salt; The oxidisability metal complexes; Oxidizing acid such as nitric acid, persulfuric acid, peracetic acid and Periodic acid; Molysite is its nitrate, vitriol, EDTA and Citrate trianion for example; The Tripotassium iron hexacyanide; Hydrogen peroxide; Aluminium salt; Sodium salt; Sylvite is Potassium Iodate for example; Ammonium salt is ceric ammonium nitrate, quaternary ammonium salt for example; Phosphonium salt; Oxymuriate; Perchlorate is potassium perchlorate for example; Nitrate; Permanganate is potassium permanganate for example; Persulphate and composition thereof.
Preferred oxygenant is iron nitrate and hydrogen peroxide.The oxygenant that generally contains about 1-50 grams per liter in the composition preferably contains about 10-40 grams per liter.
When adopting polishing composition copper of the present invention, said composition also comprises copper corrosion inhibitor.When using polishing composition Al of the present invention or W, these compositions can and preferably also comprise copper corrosion inhibitor.Typical copper corrosion inhibitor comprises imidazoles (imidozoles), triazole for example 1,2,4-triazole and benzotriazole.When having copper corrosion inhibitor, its content generally is approximately the 0.1-5 grams per liter, and typical example is about 2.5 grams per liters.
Composition of the present invention also comprises abrasive particle.The abrasive particle that is adopted comprises the abrasive particle that those often use in polishing slurries.The example of suitable abrasive particle comprises aluminum oxide, silicon-dioxide, ferric oxide, zirconium white, cerium oxide and titanium dioxide and composition thereof.Preferred abrasive particle is an aluminum oxide.And abrasive particle can comprise bivalent rare earth ion or its colloidal state hydroxide suspension body, and wherein rare earth ion has its higher valence state.Some suitable rare earth examples are Ce 4+, Pr 4+And Tb 4+Or their the colloidal state oxide compound suspensoid of cerium oxide for example.Bivalent rare earth or rare earth oxide colloid play oxide catalyst.
The bivalent rare earth additive is those disclosed additive in common unsettled U.S. Patent Application Serial Number 08/756,361 for example, can be the part of polishing slurries, introduces above-mentioned United States Patent (USP) here as a reference.
Abrasive particle generally has the particle diameter of about 10-1000 nanometer, preferably has the particle diameter of about 50-200 nanometer.The amount of abrasive particle represents to be approximately 0.5%-6% with weight percent, and preferred weight percent is approximately 2%-4%.
When needing, can adopt the mixture of abrasive.The example of these mixtures comprises aluminum oxide (approximately 0.1-6 weight %), silicon-dioxide (approximately 0.1-5 weight %) and zirconium white (approximately 0.1-6 weight %).More typical abrasive mixture comprises aluminum oxide (approximately 1-5 weight %) and silicon-dioxide (approximately 1-20 weight %).
And slurry of the present invention is aqueous slurry preferably.The suitable slurry of other type comprises the slurry that those use the dilution organic solvent, and described dilution organic solvent for example is Texacar PC, list and polyvalent alcohol for example methyl alcohol, ethanol, ethylene glycol and glycerine.Certainly, when needs, the mixture of these thinners and with the mixture of water all be operable.
Composition of the present invention also comprises tensio-active agent.Suitable tensio-active agent comprises anionic, cationic, nonionic and zwitterionic compound.The example that is used for tensio-active agents more of the present invention for example discloses at following document: Kirk-Othmer, Encyclopedia of Chemical Terminology, 3rd Edition, Vol.22 (John Wiley ﹠amp; Sons, 1983), Sislet ﹠amp; Wood, and Encyclopedia ofSurface Active Agent (Chemical Publishing Co., Inc.1964), McCutcheon ' s Emulsifiers ﹠amp; Detergents, North American andInternational Edition (McCutcheon Division, The MCPublishing Co., 1991), Ash, The Condensed Encyclopedia ofSurfactants (Chemical Publishing Co., Inc., 1989), Ash, WhatEvery Chemical Technologist Wants to Know About...Emulsifiers and Wetting Agent, Vol.1 (Chemical PublishingCo., Inc., 1988), Tadros, Surfactants (Academic Press, 1984), Napper, Polymeric Stabilization of Colloidal Dispersion (Academic Press, 1983) and Rosen, Surfactants ﹠amp; InterfacialPhenomena, 2 NdEdition (John Wiley ﹠amp; Sons, 1989), introduce all documents here as a reference.The exemplary of suitable tensio-active agent is: sodium alkyl sulfate, alkyl sodium sulfonate, quaternary salt class be tetramethyl-ammonium halide, cetyl trimethyl ammonium halide, oxyhydroxide, ninth of the ten Heavenly Stems ether and combination thereof for example.Preferred surfactants is for example sodium hexy1 sulfate, heptyl sodium sulfate, sodium octyl sulfate, nonyl sodium sulfate and a sodium lauryl sulphate of vitriol, and sodium octyl sulfate is best.Sodium octyl sulfate can have been bought on market, and trade mark is Dupanol80 (Witco), Standapol LF (Henkel/Cognis), Texapon842, (Henkel), Texapon890 (Henkel), Sulfotex OA (Henkel) and PolystepB-29 (Stephan).
The amount of tensio-active agent be generally about 0.1-100 milliliter/liter, preferably approximately be the 20-50 milliliter/liter.
Composition of the present invention also comprises chloride-ion source and source of sulfate ions.Chloride-ion source and source of sulfate ions generally exist with the form of salt, comprise for example salt of sodium and potassium of basic metal; Alkaline-earth metal is the salt of calcium for example; With ammonia salt.
Preferred chloride-ion source is a sodium-chlor, and preferred source of sulfate ions is a sodium sulfate.
The content of each generally is approximately the 0.001-5 grams per liter in chloride-ion source and the source of sulfate ions, and the amount of preferred chloride-ion source is approximately the 0.05-0.1 grams per liter.The amount of preferred source of sulfate ions is approximately the 1-3 grams per liter.
Preferably, but not necessarily, paste compound comprises two parts, and wherein part A comprises oxygenant, tensio-active agent, chloride-ion source and source of sulfate ions and corrosion inhibitor (if existence); Part B comprises abrasive particle.
Composition of the present invention, especially the optimum concn of each component cause under low overdraft concerning copper high polishing velocity, with respect to other cushioning material for example Ta and the Ti to more clean Surface, better last pattern and lower metallurgical imperfection is for example swiped, spot corrosion etc. after the good selectivity of copper, the rinsing.
Paste compound of the present invention can be used for polishing Cu, W and Al and alloy thereof, and with respect to Ti, TiN, Ta and TaN Cu, W and Al is had selectivity.
The structure of handling according to the present invention generally is to have to be embedded in for example semiconducter device of the copper-connection in the silicon-dioxide (line, embolism, path, whole with partial interconnection) of dielectric material, this structure can also comprise tectum, silicon nitride for example is as in low k dielectric/Damascus and double damask structure.Silicon-dioxide generally is the silicon-dioxide or the TEOS (tetraethyl orthosilicate) of high density plasma deposition.
Copper-connection uses tantalum, tantalum nitride, titanium or titanium nitride and composition thereof as stopping or cushioning material between copper and the medium usually.Therefore, the CMP composition contacts various material, and copper, medium or tectum and chip back surface, chip back surface be the silicon thin layer of oxidation normally.
In view of the above, compare polishing composition with medium and also must have selectivity to remove metal.
The present invention makes it can realize high polishing velocity to Cu under low overdraft.For example, the overdraft that is adopted can be low to moderate 1 pound/inch 2The general overdraft that is adopted is approximately 1 pound/inch 2, preferably approximately is 2-6 pound/inch 2In case known present disclosure, under situation about too much not testing, those skilled in the art can determine to polish or other smooth parameter.For example, the speed of rotation of polishing platen (liner) generally is approximately 10-90 rev/min, and preferably approximately 40-80 rev/min, the speed of rotation of chip carrier generally is approximately 10-70 rev/min, preferably approximately 15-60 rev/min.
Polishing underlay can be the liner that often uses in the microelectronic device polishing.
By the available polishing velocity of the present invention generally be approximately 6,000 to 11,000 dusts/minute, more typically be approximately 8000 to 9000 dusts/minute.
Following nonrestrictive example is used to further specify the present invention.
Especially, table 1 shows the polishing velocity of Cu under the situation that has and do not exist various salt.When not having any interpolation salt, the polishing velocity of Cu is low, be approximately 330 dusts/minute.Yet, the NaCl that adds 10mM polishing velocity can be brought up to about 9400 dusts/minute.Interpolation based on the anion surfactant Duponol of sodium octyl sulfate also the Cu polishing velocity can be brought up to about 1900 dusts/minute.All other salt does not show and can significantly improve the Cu polishing velocity.
In the example that provides below, slurry comprises the iron nitrate of 10g/l, the aluminium sesquioxide of 1.5W% and the benzotriazole of 1.5 grams per liters.Sodium octyl sulfate is surfactant D uponol (Dupont), Standapol (Cognis) or the Texapon (Cognis) that market can have been bought.
Table 1
The Cu polishing velocity: dust/minute
Overdraft: 5 pounds/inch 2, RR platen/carrier
The 50/30IC-1000 liner
Westech 372 polishing machines
Iron nitrate, BTA, aluminum oxide+salt
Salt 10 (mM) The Cu polishing speed, dust/min
?1 Iron nitrate+BTA+ aluminum oxide ?330
?2 +NaCl ?9417
?3 +Na 2SO 4 ?268
?4 + Trisodium Citrate 2H 2O ?312
?5 +NaNO 3 ?274
?6 +Na 2HPO 4 ?233
?7 + sodium oxalate ?281
?8 +Na 2SiF 6 ?224
?9 +NaF ?260
?10 + Dupono (sodium octyl sulfate) ?1936
Table 2 shows the polishing velocity of Cu when having Duponol (sodium octyl sulfate) and other Na salt.Obviously vitriol and muriate increase the polishing velocity of Cu, and other material does not have significant effect.
Table 2
The Cu polishing velocity
5 pounds/inch of overdraft 2, RR platen/carrier 50/30IC-1000 liner
Westech 372 polishing machines
Iron nitrate, BTA, aluminum oxide, 10mM sodium octyl sulfate+salt
Salt 10 (mM) The Cu polishing speed, dust/min
?1 Iron nitrate+BTA+ aluminum oxide+Duponol (sodium octyl sulfate) ?1936
?2 +NaCl ?5105
?3 +Na 2SO 4 ?3142
?4 + Trisodium Citrate 2H 2O ?2365
?5 +NaNO 3 ?1960
?6 +Na 2HPO 4 ?1124
?7 + sodium oxalate ?2569
?8 +Na 2SiF 6 ?2132
?9 +NaF ?1865
Table 3 shows the combined effect of muriate and other salt.Add muriate under all conditions and all improve the polishing velocity of Cu.
Table 3
The Cu polishing velocity: dust/minute
5 pounds/inch of overdraft 2, RR platen/carrier 50/30IC-1000 liner
Westech 372 polishing machines
Iron nitrate, BTA, aluminium sesquioxide+10mMNaCl+ salt
Salt 10 (mM) The Cu polishing speed, dust/min
?1 Iron nitrate+BTA+ aluminum oxide+NaCl ?9417
?2 +Na 2SO 4 ?8862
?3 + Trisodium Citrate 2H 2O ?8483
?4 +NaNO 3 ?9540
?5 +Na 2HPO 4 ?8393
?6 + sodium oxalate ?10061
?7 +Na 2SiF 6 ?6626
?8 +NaF ?8914
?9 Sodium octyl sulfate ?5105
Table 4 has shown the combined effect of NaCl, sodium octyl sulfate and other salt.
Table 4
The Cu polishing velocity: dust/minute
5 pounds/inch of overdraft 2, RR platen/carrier 50/30IC-1000 liner
Westech 372 polishing machines
Iron nitrate, BTA, aluminum oxide+10mM sodium octyl sulfate, 10mMNaCl+ salt
Salt 10 (mM) The Cu polishing speed, dust/min
?1 Iron nitrate+BTA+ aluminum oxide+sodium octyl sulfate+NaCl ?5105
?2 +Na 2SO 4 ?8337
?3 + Trisodium Citrate 2H 2O ?4626
?4 +NaNO 3 ?7088
?5 +Na 2HPO 4 ?7886
?6 + sodium oxalate ?8325
?7 +Na 2SiF 6 ?7246
?8 +NaF ?8119
Fig. 1 shows for various additives, the relation between variation of the polishing velocity of Cu and the overdraft.Comparison curves 1 and 2 as can be seen, even under higher overdraft, the existence of BTA has also reduced the polishing velocity of Cu.Add muriate and significantly do not increase polishing velocity (curve 3,4 and 7).Yet, with sodium octyl sulfate to combine effect remarkable, shown in curve 5 and 6.
Comparison curves 2 and 3 as can be seen, under the situation that has sodium octyl sulfate (Duponol), even under lower chloride concentration, also can access higher polishing velocity.
The invention provides a kind of polishing technology that utilizes two slurries partly to flow, these two slurry part streams comprise part A in first-class and the part B in second stream.In different embodiments of the invention, the difference that can use the various combinations of flow velocity to set up the slurry that is best suited for specified criteria is formed.Can adjust this flowing in the different time in polishing process forms with the difference of setting up slurry in each polishing stage.
The description of front illustrates and has described the present invention among the present invention.In addition, the disclosure only illustrates and has described most preferred embodiment of the present invention, but as mentioned above, corresponding with the skills and knowledge of top instruction and/or association area, should understand the present invention can use in various other combination, modification and environment, and can change or revise in the described here invention theory scope.The foregoing description is in order to illustrate known enforcement best mode of the present invention, so that others skilled in the art can be in these or other embodiment and according to concrete application of the present invention or use needed various modification to utilize the present invention.Therefore, this description is not intended to limit the invention to form disclosed herein.And, should be interpreted as additional claim and comprise alternate embodiments.

Claims (25)

1. a paste compound comprises abrasive particle, oxygenant, tensio-active agent, chloride-ion source and source of sulfate ions.
2. the paste compound of claim 1 is comprising about 0.5 abrasive particle to about 6% weight percent, about oxygenant of 1 to 50g/l, about tensio-active agent of 0.1 to about 100ml/l; About chloride-ion source of 0.001 to about 20g/l and about source of sulfate ions of 0.001 to about 20g/l.
3. the paste compound of claim 1 wherein also comprises corrosion inhibitor.
4. the paste compound of claim 3, wherein the amount of corrosion inhibitor is about 0.1 to about 5 grams per liters.
5. the paste compound of claim 4, wherein corrosion inhibitor is selected from imidazoles, triazole and substituted triazole.
6. the paste compound of claim 4, wherein corrosion inhibitor comprises benzotriazole.
7. the paste compound of claim 1, wherein chloride-ion source comprises sodium-chlor.
8. the paste compound of claim 1, wherein the amount of chloride-ion source is about 0.001 to about 5 grams per liters.
9. the paste compound of claim 1, wherein the amount of chloride-ion source is about 0.05 to about 0.1 grams per liter.
10. the paste compound of claim 1, wherein the amount of source of sulfate ions is about 1 to about 3 grams per liters.
11. the paste compound of claim 1, wherein source of sulfate ions comprises sodium sulfate.
12. the paste compound of claim 1, wherein oxygenant comprises iron nitrate.
13. the paste compound of claim 1, wherein abrasive particle comprises aluminum oxide.
14. the paste compound of claim 1, wherein tensio-active agent comprises vitriol.
15. the paste compound of claim 14, wherein this vitriol is selected from sodium hexy1 sulfate, heptyl sodium sulfate, sodium octyl sulfate, nonyl sodium sulfate and sodium lauryl sulphate and composition thereof.
16. the paste compound of claim 1, wherein tensio-active agent is selected from sodium alkyl sulfate, alkylsulfonate, quaternary ammonium salt, ninth of the ten Heavenly Stems ether and composition thereof.
17. the paste compound of claim 1, wherein tensio-active agent comprises sodium octyl sulfate.
18. a method that is used for glazed surface comprises paste compound is provided from the teeth outwards; Polish this surface by contacting with polishing underlay, wherein paste compound comprises abrasive particle, oxygenant, tensio-active agent, chloride-ion source and source of sulfate ions.
19. the method for claim 18, wherein this surface is selected from copper, aluminium, tungsten and their alloy.
20. the method for claim 19 is copper or copper alloy with polished surface wherein, wherein paste compound further comprises copper corrosion inhibitor.
21. the method for claim 20 is a refractory metal liner below copper or copper alloy wherein.
22. the method for claim 21, wherein this refractory metal liner is selected from niobium, tantalum, titanium, their nitride and their mixture.
23. the method for claim 18 wherein adopts about 1 to about 9 pounds/inch 2Overdraft polish.
24. the method for claim 23, wherein overdraft is approximately 2 to 6 pounds/inch 2
25. the method for claim 20, wherein the speed of polishing underlay is approximately 10 to about 90 rev/mins in polishing process, and the speed of chip carrier is approximately 10 to about 70 rev/mins in polishing process.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111083A1 (en) * 2005-04-21 2006-10-26 Anji Microelectronics (Shanghai) Co., Ltd. Polishing slurry and its use
WO2006125371A1 (en) * 2005-05-17 2006-11-30 Anji Microelectronics (Shanghai) Co., Ltd Polishing slurry
WO2010037265A1 (en) * 2008-09-26 2010-04-08 安集微电子（上海）有限公司 Chemical-mechanical polishing liquid
CN101724347A (en) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN101896571A (en) * 2007-12-19 2010-11-24 卡伯特微电子公司 Halide anions for metal removal rate control
CN102079063A (en) * 2009-12-01 2011-06-01 中芯国际集成电路制造(上海)有限公司 Chemical and mechanical grinding method
CN116042098A (en) * 2023-02-08 2023-05-02 广东粤港澳大湾区黄埔材料研究院 Nano alumina polishing solution and application thereof in polishing of infrared chalcogenide glass

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111083A1 (en) * 2005-04-21 2006-10-26 Anji Microelectronics (Shanghai) Co., Ltd. Polishing slurry and its use
WO2006125371A1 (en) * 2005-05-17 2006-11-30 Anji Microelectronics (Shanghai) Co., Ltd Polishing slurry
CN101896571A (en) * 2007-12-19 2010-11-24 卡伯特微电子公司 Halide anions for metal removal rate control
WO2010037265A1 (en) * 2008-09-26 2010-04-08 安集微电子（上海）有限公司 Chemical-mechanical polishing liquid
CN101724347A (en) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN102079063A (en) * 2009-12-01 2011-06-01 中芯国际集成电路制造(上海)有限公司 Chemical and mechanical grinding method
CN116042098A (en) * 2023-02-08 2023-05-02 广东粤港澳大湾区黄埔材料研究院 Nano alumina polishing solution and application thereof in polishing of infrared chalcogenide glass

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TWI306895B (en) 2009-03-01

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