CN1518132A - Organic light-emitting dipolar body fer lowering external light reflection and its manufacturing process - Google Patents
Organic light-emitting dipolar body fer lowering external light reflection and its manufacturing process Download PDFInfo
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- CN1518132A CN1518132A CNA031006574A CN03100657A CN1518132A CN 1518132 A CN1518132 A CN 1518132A CN A031006574 A CNA031006574 A CN A031006574A CN 03100657 A CN03100657 A CN 03100657A CN 1518132 A CN1518132 A CN 1518132A
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Abstract
An organic LED able to decrease the reflection of external light is prepared through providing a substrate, generating metallic reflection layer on the substrate, generating transparent anode, generating organic layer, generating semi-transparent electron-inplantation cathode and generating transparent electrodes. Its advantages are high effect to decrease the reflection of external light, optimal luminescent efficiency, simple structure and low cost.
Description
Technical field
The invention belongs to display components and processing procedure thereof, particularly a kind of organic light emitting diode and processing procedure thereof that reduces the ambient light line reflection.
Background technology
Organic electro-luminescent display (Organic Electro luminescence Display; OLED; Organic EL Display) is called organic light emitting diode (Organic Light Emitting Diode again; OLED) therefore display, can take the lead in replacing twisted-nematic (Twist Nematic owing to have high brightness, fast, compact, full-color, the no subtense angle of screen reaction speed, do not need LCD formula backlight and save light source and power consumption; TN) and supertwist to row (Super Twist Nematic; STN) market of LCD, and further replace small size membrane transistor LCD, and become the display unit that portable information product of new generation, mobile phone, personal digital assistant device and portable computer generally use.
As shown in Figure 1, the basic structure of organic light emitting diode is on the transparency carrier 10 that is coated with transparent anode 12, plates organic material in regular turn to form organic layer 14, to plate metal to form metallic cathode 16.
Usually cathodic metal is opaque and the tool reflectivity.When applied voltage makes element luminous, light radiates out via the path of transparent anode 12 and transparency carrier 10.
This kind is called bottom-emission (bottom emission) by the luminous mode of orientation substrate; Otherwise, transparent conductive anode is plated on the reflexive substrate of opaque tool (also can be and on transparency carrier, plate one deck reflective metal layer), after then plating identical organic layer, plate transparent cathode again, at this moment, the luminous system of element radiates via transparent cathode, is referred to as top light emitting (top emission).
Above-mentioned two kinds of structures all reflect the incident light of external environment easily because of having metallic reflector, make the contrast of display pannel reduce.Therefore, traditionally, in the bottom-emission structure, can utilize black and tool conductive material,, insert between organic layer and the reflective cathode, make the incident light of external environment be avoided producing reflection by this absorbed as zinc oxide.This kind structure is referred to as black negative electrode (black cathode).
As shown in Figure 2, another kind is referred to as interfering layer (black layer) structure, it is not that incident light is absorbed, but the interfering layer 26 that constitutes by the film that between the cloudy plate of organic layer 22 and metal (being reflective cathode) 28, plates the multilayer different refractivity, and the reverberation that makes translucent electronics inject cathode layer 24 and reflective cathode 28 by the thickness of adjusting interfering layer 26 produces 180 ° phase difference, damaging property interference and reach and reduce catoptrical effect, and then promote contrast.
No matter be the black negative electrode (black cathode) or the making of interfering layer (black layer), the conductivity of material all is the factor of considering.If the material conductivity of selecting is not good, may cause the driving voltage of element to increase, inconsistent with the low power consumption that requires now.And interfering layer more has the consideration of each layer film refractive index.So, in the selection of material certain degree of difficulty is arranged.In addition, as long as many one decks structure, will increase not to people and find pleasure in the cost seen and the increase of time on the processing procedure.Under the time-histories of being particular about time to market is considered, as long as can reduce one deck structure on the processing procedure, not only can reduce cost, and shorten the processing procedure time, also needn't be for, structure adjusting relevant process parameter because of increasing, and this will make that product is more competitive.
Summary of the invention
The purpose of this invention is to provide a kind of simple in structure, cost is low, reduce the organic light emitting diode and the processing procedure thereof of the reduction ambient light line reflection that the ambient light line reflection is disturbed, luminous efficiency is good.
The organic light emitting diode that the present invention reduces the ambient light line reflection comprises substrate, be formed at metallic reflector on the substrate, be formed at transparent anode electrode on the metallic reflector, be formed at organic layer on the transparent anode electrode, be formed at translucent electronics on the organic layer injects cathode layer, is formed at translucent electronics and injects the resilient coating of cathode layer and be formed at transparency electrode on the resilient coating; Processing procedure comprise provides substrate, in substrate form metallic reflector, in forming the transparent anode electrode on the metallic reflector, on the transparent anode electrode, form organic layer, on organic layer, forming translucent electronics and inject cathode layer and form transparency electrode.
Wherein:
A kind of organic light emitting diode processing procedure that reduces the ambient light line reflection, it comprises provides substrate, form the metal anode electrode, form organic layer on the metal anode electrode, form translucent electronics inject cathode layer and form transparency electrode on organic layer in substrate.
A kind of organic light emitting diode that reduces the ambient light line reflection, it comprises substrate, be formed at metal anode electrode on the substrate, be formed at organic layer on the transparent anode electrode, be formed at translucent electronics on the organic layer injects cathode layer, is formed at translucent electronics and injects the resilient coating on the cathode layer and be formed at transparency electrode on the resilient coating.
Translucent electronics injects on the cathode layer and forms so that produce the resilient coating of protection effect when the sputter transparency electrode with organic material; Transparency electrode system is formed on the resilient coating.
The thickness that translucent electronics injects cathode layer is about 0.5～5nm.
Inject cathode layer, be formed at translucent electronics and inject the resilient coating of cathode layer and be formed at transparency electrode on the resilient coating because the organic light emitting diode that the present invention reduces the ambient light line reflection comprises substrate, be formed at metallic reflector on the substrate, be formed at transparent anode electrode on the metallic reflector, be formed at organic layer on the transparent anode electrode, be formed at translucent electronics on the organic layer; Processing procedure comprise provides substrate, in substrate form metallic reflector, in forming the transparent anode electrode on the metallic reflector, on the transparent anode electrode, form organic layer, on organic layer, forming translucent electronics and inject cathode layer and form transparency electrode.When extraneous light injected cathode layer through translucent electronics, the light part of incident was injected the cathode layer reflection and is produced first reverberation via translucent electronics; Then can wear translucent electronics as for another part of the light of incident injects cathode layer and just produces reflection and form second reverberation up to metallic reflector; During use, by the thickness of adjusting organic layer and the thickness of transparent anode electrode, make and inject first reverberation of cathode layer reflection and produce 180 ° phase difference by second reverberation that metallic reflector reflects by translucent electronics, thereby damaging property interference, and then reduce extraneous reflection of light, reduce the interference of outside incident light, and the contrast of lift elements; Be the thickness of the present invention, can reach and reduce extraneous incident ray interference that promote the contrast of display, luminous efficiency is good by adjustment organic layer and transparent anode electrode.Not only simple in structure, cost is low, and reduces that the ambient light line reflection is disturbed, luminous efficiency is good, thereby reach purpose of the present invention.
Description of drawings
Fig. 1, be known bottom-emission mode LED structure schematic diagram.
Fig. 2, be known bottom-emission mode LED structure schematic diagram (interference layer structure).
Fig. 3, reduce the organic light emitting diode processing procedure embodiment one step 2 schematic diagram of ambient light line reflection for the present invention.
Fig. 4, reduce organic light emitting diode embodiment one structural representation of ambient light line reflection for the present invention.
Fig. 5, reduce the organic light emitting diode processing procedure embodiment two step 2 schematic diagrames of ambient light line reflection for the present invention.
Fig. 6, reduce organic light emitting diode embodiment two structural representations of ambient light line reflection for the present invention.
Embodiment
Embodiment one
As shown in Figure 4, the present invention's organic light emitting diode of reducing the ambient light line reflection comprises substrate 30, is formed at metallic reflector 32 on the substrate 30, is formed at transparent anode electrode 34 on the metallic reflector 32, is formed at organic layer 36 on the transparent anode electrode 34, is formed at translucent injection cathode layer 38 on the organic layer 36, is formed at the resilient coating 40 on the translucent injection cathode layer 38 and is formed at transparency electrode 42 on the resilient coating 40.
The thickness of translucent injection cathode layer 38 is about 0.5～5nm.
Organic light emitting diode (OLED) processing procedure that the present invention reduces the ambient light line reflection comprises the steps:
Step 1
As shown in Figure 3, provide substrate 30
Step 2
As shown in Figure 3, form metallic reflector 32
, be formed on the substrate 30 metal material in the mode of evaporation (Evaporation) or sputter (Sputtering) film forming, form metallic reflector 32, use the light that reflection organic light emitting diode itself sends as aluminium, chromium;
Step 3
As shown in Figure 4, form transparent anode electrode 34
Be selected from and be indium tin oxide (Indium Tin Oxide; ITO), indium-zinc oxide (Indium ZincOxide; Transparency conductive electrode material such as IZO), and steam method (Electron BeamEvaporation), hot steaming method (thermal Evaporation), chemical gaseous phase coating method (ChemicalVapor Deposition) or spray pyrolysis method methods such as (Spray Pyrolysis) with sputtering method, electron beam and on metallic reflector 32, form transparent anode electrode 34, in order to anode electrode as the organic light emission disome;
Step 4
Form organic layer 36
Be selected from and be Alq, NPB, CuPc, C545T, DCJTB, CBP, Balq, Ir (ppy)
3Deng fluorescence or phosphorescence pigment or misfit thing material, and with vacuum vapour deposition, ionization vapour deposition method, organic molecular line vapour deposition method, electricity slurry polymerization, the vacuum evaporation polymerization of the heating of vacuum vapour deposition, electron beam, soak methods such as lining method, rotation lining method, Langmuir-Blodgett (LB) membrane process, Sol-Gel method or electrolysis polymerization method and on transparent anode electrode 34, form organic layer 36;
Step 5
Form translucent electronics and inject cathode layer 38
Select the preferable and relatively more stable material of conductivity, inject the material of cathode layer 38 as electronics as lithium fluoride (LiF) metallic compound, on organic layer 36, form translucent electronics with sputter or evaporation and inject cathode layer 38, the AM aluminum metallization metal is arranged in pairs or groups with it again, can effectively reduce driving voltage value, and thickness must be enough approaches use and has certain light transmission and constitute translucent, and it is counted atomic layer level thickness and is about 0.5～5nm and gets final product.In addition, magnesium silver (Mg-Ag), aluminium lithium (Al-Li) alloy electrode material also have same effect;
Step 6
Form resilient coating 40
Inject on the cathode layer 38 to form resilient coating 40 in translucent electronics from organic materials such as CuPc; So that produce the protection effect during one deck transparency electrode under sputter, because high-octane forming sputtering film probably has the anxiety of the organic layer of undermining, satisfying needs to add this resilient coating 40 and absorbs most of energy;
Step 7
Be selected from and be transparent conductive materials such as indium tin oxide, indium-zinc oxide, and on resilient coating 40, form transparency electrode 42 with methods such as sputtering method, electron beam steaming methods; Sputtering method has advantages such as large tracts of land film forming, good film thickness uniformity and reproducibility, thereby is employed the film technique as volume production.
When to the organic light emitting diode applied voltage, light portion from organic layer 36 emissions radiates to the outside through transparency electrode 42 directions, part then goes out towards the outside radiation by metallic reflector 32, in this simultaneously, the incident ray 100 that comes from the outside also can be via metallic reflector 32 reflections, and this will make the contrast of display pannel reduce.
As shown in Figure 4, when extraneous light 100 injected cathode layer 38 through translucent electronics, the light part of incident was injected cathode layer 38 reflections and is produced first reverberation 200 via translucent electronics; Then can wear translucent electronics as for another part of the light of incident injects cathode layer 38 and just produces up to metallic reflector 32 and reflect and form second reverberation 300.It should be noted that in the present invention can be by the thickness 1d that adjusts organic layer 36 and the thickness 1d ' of transparent anode electrode 34, make and inject first reverberation 200 of cathode layer 38 reflections and produce 180 ° phase difference by second reverberation 300 that metallic reflector 32 reflects by translucent electronics, thereby damaging property interference, and then the reflection of reduction ambient light 100, reduce the interference of outside incident light, and the contrast of lift elements.
Embodiment two
As shown in Figure 6, the present invention's organic light emitting diode of reducing the ambient light line reflection comprises substrate 50, is formed at metal anode electrode 52 on the substrate 30, is formed at organic layer 54 on the metal anode electrode 52, is formed at translucent injection cathode layer 56 on the organic layer 54, is formed at the resilient coating 58 on the translucent injection cathode layer 56 and is formed at transparency electrode 60 on the resilient coating 58.
The thickness of translucent injection cathode layer 52 is about 0.5～5nm.
Organic light emitting diode (OLED) processing procedure that the present invention reduces the ambient light line reflection comprises the steps:
Step 1
As shown in Figure 5, provide substrate 50
Step 2
Form metal anode electrode 52
Select metal or alloy such as conductivity is preferable and working function is bigger nickel, palladium, platinum, gold, silver, chromium, equal directly to form on the substrate 50 metal anode electrode 52 with the wireless plating technology of vacuum vapour deposition, ionization vapour deposition method/sputtering method or the wet type of dry type resistance heating or electron beam heating;
Step 3
Form organic layer 54
Be selected from and be Alq, NPB, CuPc, C545T, DCJTB, CBP, Balq, Ir (ppy)
3Deng fluorescence or phosphorescence pigment or misfit thing material, and with vacuum vapour deposition, ionization vapour deposition method, organic molecular line vapour deposition method, electricity slurry polymerization, the vacuum evaporation polymerization of the heating of vacuum vapour deposition, electron beam, soak methods such as lining method, rotation lining method, Langmuir-Blodgett (LB) membrane process, Sol-Gel method or electrolysis polymerization method and on metal anode electrode 52, form organic layer 54;
Step 4
Form translucent electronics and inject cathode layer 56
Select the preferable and relatively more stable material of conductivity, inject the material of cathode layer 56 as electronics as lithium fluoride (LiF) metallic compound, on organic layer 54, form translucent electronics with sputter or evaporation and inject cathode layer 56, the AM aluminum metallization metal is arranged in pairs or groups with it again, can effectively reduce driving voltage value, and thickness must be enough approaches use and has certain light transmission and constitute translucent, and it is counted atomic layer level thickness and is about 0.5～5nm and gets final product.In addition, magnesium silver (Mg-Ag), aluminium lithium (Al-Li) alloy electrode material also have same effect;
Step 5
Form resilient coating 58
Inject on the cathode layer 56 to form resilient coating 58 in translucent electronics from organic materials such as CuPc; So that produce the protection effect during one deck transparency electrode under sputter, because high-octane forming sputtering film probably has the anxiety of the organic layer of undermining, satisfying needs to add this resilient coating 58 and absorbs most of energy;
Step 6
Be selected from and be transparent conductive materials such as indium tin oxide, indium-zinc oxide, and on resilient coating 58, form transparency electrode 60 with methods such as sputtering method, electron beam steaming methods; Sputtering method has advantages such as large tracts of land film forming, good film thickness uniformity and reproducibility, thereby is employed the film technique as volume production.
When to the organic light emitting diode applied voltage, light portion from organic layer 54 emissions radiates to the outside through transparency electrode 60 directions, part then goes out towards the outside radiation by metal anode electrode 52, in this simultaneously, the incident ray 400 that comes from the outside also can be via 52 reflections of metal anode electrode, and this will make the contrast of display pannel reduce.
As shown in Figure 6, when extraneous light 400 injected cathode layer 56 through translucent electronics, the light part of incident was injected cathode layer 56 reflections and is produced first reverberation 500 via translucent electronics; Then can wear translucent electronics as for another part of the light of incident injects cathode layer 56 and just produces up to metal anode electrode 52 and reflect and form second reverberation 600.It should be noted that in the present invention can be by the thickness 1p that adjusts organic layer 54, make and inject first reverberation 500 of cathode layer 56 reflections and produce 180 ° phase difference by second reverberation 600 that metal anode electrode 52 reflects by translucent electronics, thereby damaging property interference, and then reduce the reflection of ambient light 400, reach the effect of the contrast of lift elements.
The present invention has following advantage:
1, known increase black negative electrode (black cathode) though can reach the interference that reduces extraneous incident light, also may absorb the light that organic material sends to absorb extraneous incident light, has lowered the luminous efficiency of organic light emitting diode.The present invention is not because of increasing black negative electrode (black cathode) so luminous efficiency is good than known techniques.
2, known increase not only increases difficulty, increase cost, the output in the attenuating unit interval on the processing procedure to absorb the black negative electrode (black cathode) of extraneous incident light.The present invention can reach and reduce extraneous incident ray interference then by the thickness of adjusting organic layer and transparent anode electrode, promotes the contrast of display.
Claims (10)
1, a kind of organic light emitting diode processing procedure that reduces the ambient light line reflection, it comprises provides substrate; It is characterized in that it also be included in substrate form metallic reflector, in forming the transparent anode electrode on the metallic reflector, on the transparent anode electrode, form organic layer, on organic layer, forming translucent electronics and inject cathode layer and form transparency electrode.
2, the organic light emitting diode processing procedure of reduction ambient light line reflection according to claim 1 is characterized in that forming so that produce the resilient coating of protection effect when the sputter transparency electrode with organic material on the described translucent electronics injection cathode layer; Transparency electrode system is formed on the resilient coating.
3, the organic light emitting diode processing procedure of reduction ambient light line reflection according to claim 1 is characterized in that the thickness that described translucent electronics injects cathode layer is about 0.5～5nm.
4, a kind of organic light emitting diode processing procedure that reduces the ambient light line reflection, it comprises provides substrate; It is characterized in that it also is included in substrate and forms the metal anode electrode, forms organic layer on the metal anode electrode, form translucent electronics injection cathode layer and form transparency electrode on organic layer.
5, the organic light emitting diode processing procedure of reduction ambient light line reflection according to claim 4 is characterized in that forming so that produce the resilient coating of protection effect when the sputter transparency electrode with organic material on the described translucent electronics injection cathode layer; Transparency electrode system is formed on the resilient coating.
6, the organic light emitting diode processing procedure of reduction ambient light line reflection according to claim 4 is characterized in that the thickness that described translucent electronics injects cathode layer is about 0.5～5nm.
7, a kind of organic light emitting diode that reduces the ambient light line reflection, it comprises substrate and transparent anode electrode; It is characterized in that being formed with metallic reflector on the described substrate; The transparent anode electrode system is formed on the metallic reflector; In forming organic layer on the transparent anode electrode, injecting cathode layer, on translucent electronics injection cathode layer, form resilient coating and on resilient coating, form transparency electrode in forming translucent electronics on the organic layer.
8, the organic light emitting diode of reduction ambient light line reflection according to claim 7 is characterized in that the thickness that described translucent electronics injects cathode layer is about 0.5～5nm.
9, a kind of organic light emitting diode that reduces the ambient light line reflection, it comprises substrate and anode electrode; It is characterized in that described anode electrode is the metal anode electrode, in forming organic layer on the transparent anode electrode, injecting cathode layer, on translucent electronics injection cathode layer, form resilient coating and on resilient coating, form transparency electrode in forming translucent electronics on the organic layer.
10, the organic light emitting diode of reduction ambient light line reflection according to claim 9 is characterized in that the thickness that described translucent electronics injects cathode layer is about 0.5～5nm.
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| CN100369288C (en) * | 2005-05-11 | 2008-02-13 | 友达光电股份有限公司 | Organic electroluminescent display elements |
| US7642709B2 (en) | 2005-04-25 | 2010-01-05 | Au Optronics Corp. | Organic electroluminescent display with reflection-reducing properties |
| CN102113415A (en) * | 2008-07-29 | 2011-06-29 | 索尼公司 | Light-emitting element and organic electroluminescent display device |
| WO2014047866A1 (en) * | 2012-09-28 | 2014-04-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
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| US7642709B2 (en) | 2005-04-25 | 2010-01-05 | Au Optronics Corp. | Organic electroluminescent display with reflection-reducing properties |
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| CN102113415A (en) * | 2008-07-29 | 2011-06-29 | 索尼公司 | Light-emitting element and organic electroluminescent display device |
| CN104662690A (en) * | 2012-09-28 | 2015-05-27 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| WO2014047866A1 (en) * | 2012-09-28 | 2014-04-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| JP2015534230A (en) * | 2012-09-28 | 2015-11-26 | オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド | Organic electroluminescence device and manufacturing method thereof |
| EP2903049A4 (en) * | 2012-09-28 | 2016-06-01 | Oceans King Lighting Science | Organic electroluminescent device and preparation method thereof |
| CN104662690B (en) * | 2012-09-28 | 2016-10-26 | 海洋王照明科技股份有限公司 | A kind of organic electroluminescence device and preparation method thereof |
| US9570700B2 (en) | 2012-09-28 | 2017-02-14 | Ocean's King Lighting Science & Technology Co., Ltd. | Organic electroluminescent device and preparation method thereof including forming a cathode by combining zinc oxide, acetic acid and a phthalocyanine substance |
| CN104124373A (en) * | 2013-04-24 | 2014-10-29 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN109166982A (en) * | 2018-08-31 | 2019-01-08 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device, display panel and display device |
| CN116434705A (en) * | 2023-06-12 | 2023-07-14 | 惠科股份有限公司 | Driving circuit, display panel and display device |
| CN116434705B (en) * | 2023-06-12 | 2023-10-24 | 惠科股份有限公司 | Driving circuit, display panel and display device |
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