CN1507081A - Organic LED element and its material - Google Patents
Organic LED element and its material Download PDFInfo
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- CN1507081A CN1507081A CNA021555796A CN02155579A CN1507081A CN 1507081 A CN1507081 A CN 1507081A CN A021555796 A CNA021555796 A CN A021555796A CN 02155579 A CN02155579 A CN 02155579A CN 1507081 A CN1507081 A CN 1507081A
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Abstract
The present invention is organic LED element and its material. The organic LED element includes an anode configured on transparent substrate, an organic light emitting layer on the anode, a cathode on the organic light emitting layer and a metal doped layer between the cathode and the organic light emitting layer. The metal doped layer has the component of metal doped organic compound.
Description
Technical field
The invention relates to a kind of organic light-emitting diode element (OLED) and be applied to the material of organic light-emitting diode element, and particularly relevant for a kind of organic light-emitting diode element and material thereof with low driving voltage.
Background technology
Have in light weight and display higher efficiency at present, LCD for example is by in the development widely.Yet LCD still has many problems, and for example the visual angle is wide inadequately, response time makes it can't use in animation at a high speed inadequately soon and need backlight so that more power consumption or the like.Especially, also there is a problem in LCD, can't accomplish the panel that maximizes exactly.
And existing now a kind of new flat-panel screens technology can solve the above problems the organic light emitting diode display that the flat-panel screens that this kind is new is promptly developed in recent years.
A kind of display element that utilizes the self luminous characteristic of luminous organic material to reach display effect of Organic Light Emitting Diode.It is made of a pair of electrodes and an organic luminous layer.Wherein, contain luminescent material in this organic luminous layer.Between electric current is by transparent anode and metallic cathode so that electronics and electric hole in luminescent material in conjunction with and when producing exciton, just can make luminescent material produce the mechanism of giving out light.
Known technology such as Applied Physics Letters, Vol.51, No.12, pp 913-915 (1987), C.W.Tang and S.A.VanSlyke reported in literature, what delivered is a kind of double-deck Organic Light Emitting Diode, and it also comprises an organic luminous layer and an electric hole transport layer or an electron transfer layer except having the pair of electrodes structure.When electronics and electric hole by injecting by two electrodes respectively, and after electron transfer layer or electric hole transport layer, just can be in organic luminous layer in conjunction with and produce and give out light.Wherein, the characteristic of the luminescent material in this organic luminous layer, according between the ground state of its material and the excitation state can jump and the different characteristic of luminescent chromaticity is arranged.
In addition, at Toppan Printing Co. (cf, 51st periodical meeting, societ ofApplied Physics, Preprint 28a-PB-4, p.1040) and Pioneer Co. (cf, 54stperiodical meeting, societ of Applied Physics, Preprint 29p-2c-15, p1127) mention in the document and utilize lithium and the formed negative electrode of aluminum metal alloy, can reduce the driving voltage of OLED element and can promote its brightness.
And in Japan Patent JP10270171 and European patent EP 1089361, also mention, the organic compound that one metal and that hangs down working function is had electron withdrawing group carries out common evaporation with a proper proportion, a formed electron injecting layer can effectively reduce the driving voltage of OLED element.
Yet, in known technology, utilize lithium and the formed negative electrode of aluminum metal alloy to reduce the element drives voltage method, still have its limit for the driving voltage that can reduce.In addition, utilize the organic compound that is mixed with metal and has electron withdrawing group as electron injecting layer, whereby with reduction element drives voltage method, though can reduce the driving voltage of element, the stability of this kind material and element operating efficiency are still not enough.
Summary of the invention
Therefore, purpose of the present invention is exactly a kind of organic light-emitting diode element being provided and being applied to the material of organic light-emitting diode element, to effectively reduce the driving voltage of element.
Another object of the present invention provides a kind of organic light-emitting diode element and is applied to the material of organic light-emitting diode element, to improve the operating efficiency and the stability of element.
The present invention proposes a kind of organic light-emitting diode element and is applied to the material of organic light-emitting diode element, this organic light-emitting diode element comprises the anode that is configured on the transparency carrier, be configured in a organic luminous layer on the anode, be configured in the negative electrode on the organic luminous layer and be configured in negative electrode and organic luminous layer between a metal-doped layer.Composition of this metal-doped layer is one to be doped with the organic compound of a metal, and wherein this organic compound is one to have the organic compound of high glass transition temperature, its chemical formula as the formula (1):
Formula (1)
Wherein, R
1～R
6Be independently hydrogen atom, replacement out of the ordinary or the alkyl (alkyl) that does not replace, the cycloalkyl (cycloalkyl) that replaces or do not replace, the alkoxyl (alkyloxy) that replaces or do not replace, the alkenyl (alkenyl) that replaces or do not replace, replacement or amido, the replacement that does not replace or the aromatic hydroxyl that does not replace, replacement or the multiple cyclic group of aromatic series, the replacement that do not replace or the aralkyl that does not replace.In addition, Ar
1～Ar
6The fragrant heterocyclic radical that can be multiple cyclic group of aromatic hydroxyl, replacement that replaces or do not replace or the aromatic series that does not replace, replacement or the aralkyl that does not replace, replacement or do not replace.Above-mentioned each functional group's substituting group can be halogen, cyano group or nitro.And the silane that X can be oxygen, sulphur, replacement or the amido that does not replace, replacement or do not replace.
In addition, the metal that is mixed in organic compound formula (1) can be alkali metal group metal, alkaline earth metal or transition metal, and the work function of this metal is not the most greater than 4.5eV.The ratio of wherein mixing metal in organic compound formula (1) is between 0.5%～10%, preferably between 1%～3%.And the alkali metal group metal that is mixed is lithium, sodium, potassium, rubidium, caesium preferably, and the alkaline earth metal that is mixed is beryllium, magnesium, calcium, strontium, barium preferably, and the transition metal that is mixed is yttrium, lanthanum, samarium, uranium preferably.
Organic light-emitting diode element of the present invention and be applied to the material of organic light-emitting diode element, not only can effectively reduce the driving voltage of organic light-emitting diode element.And the operating efficiency and the stability of lift elements greatly.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, elaborate.
Description of drawings
Fig. 1 is the generalized section with double-deck organic light-emitting diode element according to one embodiment of the invention;
Fig. 2 is the generalized section according to the organic light-emitting diode element with three-decker of another embodiment of the present invention;
Fig. 3 is the generalized section according to the organic light-emitting diode element with four-layer structure of another embodiment of the present invention;
Fig. 4 is the generalized section according to the organic light-emitting diode element with four-layer structure of another embodiment of the present invention;
Fig. 5 is the generalized section according to the organic light-emitting diode element with five-layer structure of another embodiment of the present invention;
Fig. 6 is the generalized section according to the organic light-emitting diode element with six layers of structure of another embodiment of the present invention;
Fig. 7 is for carrying out the graph of a relation that voltage (V)-electric current (A) is tested to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively;
Fig. 8 is for carrying out electric current (A)-brightness (cd/m to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively
2) test graph of a relation;
Fig. 9 is for carrying out the graph of a relation that voltage (V)-efficient (1m/W) is tested to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively;
Figure 10 is for carrying out brightness (cd/m to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively
2The graph of a relation of)-efficient (cd/A) test.
Label declaration:
100: transparency carrier 102: anode
104: organic luminous layer 106: negative electrode
105: metal-doped layer 108: protective layer
110: electron transfer layer 110a: electron injecting layer
112: electric hole transport layer 112a: electric hole implanted layer
Embodiment
Shown in Figure 1, it illustrates and is the generalized section with double-deck organic light-emitting diode element according to one embodiment of the invention.
Please refer to Fig. 1, the Organic Light Emitting Diode among Fig. 1 is the Organic Light Emitting Diode of pair of lamina structure, and it comprises a transparency carrier 100, an anode 102, an organic luminous layer 104, one metal-doped layer 105, one negative electrode 106 and a protective layer 108.
Wherein, transparency carrier 100 for example is glass substrate, plastic base or windable substrate.
Anode 102 is configured on the transparency carrier 100.And anode 102 is to be used for the efficient injection organic luminous layer 104 of Jiang Diandong, so anode 102 preferably has the above working function of 4.5eV.The material of anode 102 can be indium tin oxide (ITO), tin oxide, gold, silver, platinum or copper etc.
Organic luminous layer 104 is configured on the anode 102.Wherein, organic luminous layer 104 also has the characteristic of transmission of electric hole and electric transmission except having the characteristics of luminescence.Wherein, the characteristic of the luminescent material in the organic luminous layer 104, according between the ground state of its material and the excitation state can jump and the different characteristic of luminescent chromaticity is arranged.
In order to make negative electrode 106 more efficient electronics be injected organic luminous layer 104, organic light-emitting diode element of the present invention also is included in and disposes a metal-doped layer 105 between negative electrode 106 and the organic luminous layer 104, whereby so that the driving voltage of element can effectively reduce.In the structure of Fig. 1, metal-doped layer 105 can be used as an electron injecting layer of this element.Yet in other non-double-deck organic light-emitting diode element, this metal-doped layer 105 might not be the role who plays the part of electron injecting layer.The constituent of metal-doped layer 105 is a feature of the present invention, and chemical constitution that it is detailed and composition will be in follow-up detailed descriptions.
And the electric current that puts on organic light-emitting diode element is generally direct current, can also be pulse current or alternating current.In addition, the mode that the cold light of organic light-emitting diode element is luminous can be that penetration is given out light by anode 102, or is reflectively given out light by negative electrode 106.
Organic light-emitting diode element of the present invention can also be the Organic Light Emitting Diode (as shown in Figure 2) with three-decker.Please refer to Fig. 2, the Organic Light Emitting Diode of this three-decker the structure of its each tunic in having Fig. 1, also comprises between organic luminous layer 104 and anode 102 and disposes an electric hole transport layer 112.
In addition, Organic Light Emitting Diode of the present invention can also be the Organic Light Emitting Diode (as shown in Figure 3 and Figure 4) with four-layer structure.Please refer to Fig. 3, the Organic Light Emitting Diode of this four-layer structure, it is except disposing between organic luminous layer 104 and the anode 102 the electric hole transport layer 112.Between organic luminous layer 104 and metal-doped layer 105, also comprise and dispose an electron transfer layer 110.In addition, please refer to Fig. 4, the Organic Light Emitting Diode of another kind of four-layer structure, it disposes an electron transfer layer 110 between organic luminous layer 104 and metal-doped layer 105, then be configuration one electric hole implanted layer 112a between organic luminous layer 104 and anode 102.
In addition, Organic Light Emitting Diode of the present invention can also be the Organic Light Emitting Diode (as shown in Figure 5) with five-layer structure.Please refer to Fig. 5, the Organic Light Emitting Diode of this five-layer structure, it is except disposing the electron transfer layer 110 between organic luminous layer 104 and metal-doped layer 105, between organic luminous layer 104 and anode 102, dispose an electric hole transport layer 112, and between anode 102 and electric hole transport layer 112, also comprise and dispose an electric hole implanted layer 112a.
Moreover Organic Light Emitting Diode of the present invention can also be the Organic Light Emitting Diode (as shown in Figure 6) with six layers of structure.Please refer to Fig. 6, the Organic Light Emitting Diode of these six layers of structures, it also comprises between electron transfer layer 110 and organic luminous layer 104 and disposes an electron injecting layer 110a except disposing the electron transfer layer 110 between organic luminous layer 104 and metal-doped layer 105.In addition, between organic luminous layer 104 and anode 102,, between anode 102 and electric hole transport layer 112, also comprise and dispose an electric hole implanted layer 112a except disposing an electric hole transport layer 112.
In above-mentioned several organic light-emitting diode elements, the material of metal-doped layer 105 is a feature of the present invention, and what it was detailed is described as follows.
The material use of metal-doped layer 105 of the present invention mixes a metal and forms in an organic compound and derivative thereof.Wherein this organic compound is one to have the organic compound of high glass transition temperature.Wherein, the molecule basic framework of this organic compound is as the formula (1):
Formula (1):
Wherein, R
1～R
6Be independently hydrogen atom, replacement out of the ordinary or the alkyl (alkyl) that does not replace, the cycloalkyl (cycloalkyl) that replaces or do not replace, the alkoxyl (alkyloxy) that replaces or do not replace, the alkenyl (alkenyl) that replaces or do not replace, replacement or amido, the replacement that does not replace or the aromatic hydroxyl that does not replace, replacement or the multiple cyclic group of aromatic series, the replacement that do not replace or the aralkyl that does not replace.In addition, Ar
1～Ar
6The fragrant heterocyclic radical that can be multiple cyclic group of aromatic hydroxyl, replacement that replaces or do not replace or the aromatic series that does not replace, replacement or the aralkyl that does not replace, replacement or do not replace.And above-mentioned each functional group's substituting group can be halogen, cyano group or nitro.The silane that X can be oxygen, sulphur, replacement or the amido that does not replace, replacement or do not replace.
In addition, the metal that is mixed in organic compound formula (1) for example is alkali metal group metal, alkaline earth metal or transition metal, and the work function of this metal is not the most greater than 4.5eV.The ratio of wherein mixing metal in organic compound formula (1) is between 0.5%～10%, preferably between 1%～3%.And the alkali metal group metal that is mixed is lithium, sodium, potassium, rubidium, caesium preferably, and the alkaline earth metal that is mixed is beryllium, magnesium, calcium, strontium, barium preferably, and the transition metal that is mixed is yttrium, lanthanum, samarium, uranium preferably.
Below, to enumerate several and can be applicable to the example with organic compound of high glass transition temperature of the present invention, it is the part of compounds of formula (1).But, be not limited in the following examples of compounds of lifting at the compound shown in the formula (1).
Formula (2)
Formula (3)
Formula (4)
Formula (5)
Formula (6)
Formula (7)
Formula (8)
Formula (9)
Formula (10)
Formula (11)
Formula (12)
Formula (13)
Formula (14)
Formula (15)
Formula (16)
Formula (17)
Formula (18)
And metal-doped layer 105 of the present invention can carry out the mode of common evaporation or sputter with a special ratios with the organic compound of above-mentioned formula (1) and above-mentioned metal and form.What is particularly worth mentioning is that, the organic compound of formula of the present invention (1), its glass transition temperature is higher than 100.In addition, the thickness of metal-doped layer 105 of the present invention can be actual required and decide according to element, and generally speaking, thickness is crossed the thin pin hole of generation easily defectives such as (pin hole); Otherwise thickness is blocked up then must to be imposed high voltage and lowers efficiency.Therefore, the thickness of metal-doped layer 105 of the present invention is preferably between between the 0.5nm to 100nm.
In addition, the material of employed electric hole transport layer is not limited especially in the organic light-emitting diode element among the present invention, usually the compound that can be used as the material of electric hole transport layer all can use, it comprises three fragrant Ammonia derivatives, and TPD or NPB (α-naphylhenyldiamine) (chemical formula is as follows) for example arranged.
TPD
NPB
The material of employed electron transfer layer is not also limited especially in organic light-emitting diode element of the present invention, and the compound that can be used as the material of electron transfer layer usually all can use.And the material of electron transfer layer commonly used for example is AlQ3, Bebq2, TAZ or BCP (chemical formula is as follows).
AlQ3
Bebq2
TAZ
BCP
The generation type of the electron transfer layer in the organic light-emitting diode element of the present invention, electric hole transport layer, electron injecting layer and electric hole implanted layer is not limited especially.The known technology that can give an example is formation such as vacuum evaporation, method of spin coating method for example.In addition, the thickness of the electron transfer layer in the organic light-emitting diode element of the present invention, electric hole transport layer, electron injecting layer and electric hole implanted layer is not limited especially.Generally speaking, thickness is crossed defectives such as the thin pin hole of generation easily; Otherwise thickness is blocked up then must to be imposed high voltage and lowers efficiency.Therefore, how rice is preferable to 1 micron scope with 1 for the thickness of electron transfer layer of the present invention, electric hole transport layer, electron injecting layer and electric hole implanted layer.
The example of below enumerating an organic light-emitting diode element is describing it in detail, but following example is not to limit the scope of the invention.
Example one
Example one is disclosed to be a kind of manufacturing process with organic light-emitting diode element of four-layer structure.Please refer to Fig. 3, at first on glass substrate 100, form an indium tin oxide layer, with as an anode 102.Then, be under the environment of 10-6 holder in vacuum degree, plate the thick electric hole transport layer 112 of the about 60nm of one deck in the surface of anode 102.Wherein, the material of electric hole transport layer 112 is NPB.
Then, on the surface of electric hole transport layer 112, plate an organic luminous layer 104.Wherein, the thickness of this organic luminous layer 104 is 20nm.In this example, the chemical formula of the luminescent material of organic luminous layer 104 as the formula (11).
Formula (11)
Afterwards, on organic luminous layer 104, plate one deck AlQ3, with as an electron transfer layer 110.Wherein, the thickness of this electron transfer layer is 20nm.
Then, on electron transfer layer 110, form a metal-doped layer 105.Wherein, this metal-doped layer 105 utilizes organic compound formula (1) and caesium is carried out common evaporation and form with the ratio of ear than 2: 1 not.At this, the thickness of metal-doped layer 105 is 20nm.
Then, plate layer of aluminum on electron transfer layer 110, with as a negative electrode 106, wherein the thickness of negative electrode 106 is 100nm.At last, at the peripheral layer protective layer 108 that coats of the component structure of being finished.So promptly finish the making of organic light-emitting diode element of the present invention.
In order to prove organic light-emitting diode element of the present invention after adding metal-doped layer, can effectively reduce the driving voltage of element really and improve the efficient of element.Below enumerate two comparative examples, to carry out the comparison of element characteristic with the element of above-mentioned example one.
Wherein, the structure of the organic light-emitting diode element of comparative example one, except metal-doped layer 105 was removed, all the structure with example one was identical with composition for the structure of all the other each tunics.In other words, its negative electrode 106 surfaces of the organic light-emitting diode element of comparative example one are not formed with metal-doped layer 105.
In addition, the structure of the Organic Light Emitting Diode of comparative example two, identical with each tunic structure of element of example one, main difference be, with the organic compound with high glass transition temperature in original metal-doped layer 105, the compound lower with glass transition temperature replaces it.At this, the chemical constitution with the organic compound that hangs down glass transition temperature is suc as formula (12).
Formula (12)
Shown in Figure 7, it is for carrying out the graph of a relation that voltage (V)-electric current (A) is tested to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively.
Please refer to Fig. 7, by can significantly seeing among the figure, the driving voltage of the Organic Light Emitting Diode of example one of the present invention, obviously the driving voltage than the Organic Light Emitting Diode of comparative example one is low.This result proves that this metal-doped layer of configuration can effectively reduce the driving voltage of element really in organic light-emitting diode element.In example one, it is used as metal-doped layer with the organic compound that caesium is doped in formula (1).Compared to the Organic Light Emitting Diode that does not dispose metal-doped layer, its driving voltage value differs about 2V approximately.
In addition, the employed organic compound of metal-doped layer of the organic light-emitting diode element of comparative example two is the compound with low glass transition temperature.Comparative example two is compared with example one of the present invention, and the material that is used as metal-doped layer with the organic compound of high glass transition temperature still has lower driving voltage.
Shown in Figure 8, it is for carrying out electric current (A)-brightness (cd/m to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively
2) test graph of a relation.
Please refer to Fig. 8, by can significantly seeing among the figure, the organic light-emitting diode element of example one of the present invention, its surface in negative electrode adds the layer of metal doped layer, can't reduce the luminosity of element.Meaning is an organic light-emitting diode element of the present invention, though add the layer of metal doped layer in the surface of negative electrode by will hang down the driving voltage of element, this metal-doped layer can't influence luminosity of element.
Shown in Figure 9, it is for carrying out the graph of a relation that voltage (V)-efficient (1m/W) is tested to example one of the present invention, comparative example one with the organic light-emitting diode element of comparative example two respectively; Shown in Figure 10, its brightness (cd/m for respectively the organic light-emitting diode element of example one of the present invention, comparative example one and comparative example two being tested
2The graph of a relation of)-efficient (cd/A).
Please refer to Fig. 9 and Figure 10, by seeing significantly among the figure that the efficient of the organic light-emitting diode element of example one of the present invention is compared all obviously preferable with the comparative example one and the efficient of the Organic Light Emitting Diode of comparative example two.
Organic light-emitting diode element of the present invention, it is formed with a metal-doped layer on the surface of negative electrode, and this metal-doped layer is used in one and has and mix an alkali metal group metal, an alkaline earth metal or a transition metal in the organic compound of high glass transition temperature and form.Owing to dispose the event of this metal-doped layer at cathode surface, not only the driving voltage of organic light-emitting diode element is reduced, but also can improve the efficient of element.In addition, what deserves to be mentioned is that utilization of the present invention has the material of the organic compound of high glass transition temperature as metal-doped layer, can make the stability of organic light-emitting diode element higher.
Though the present invention with preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (23)
1, a kind of organic light-emitting diode element is characterized in that: comprising:
One transparency carrier;
One anode is configured on this transparency carrier;
One organic luminous layer is configured on this anode;
One negative electrode is configured on this organic luminous layer;
One metal-doped layer is configured between this negative electrode and this organic luminous layer, and composition of this metal-doped layer is 0.5%～10% the metal of mixing in an organic compound, and the chemical formula of this organic compound is suc as formula (1):
Formula (1)
Wherein, R
1～R
6Be independently hydrogen atom, replacement out of the ordinary or the alkyl (alkyl) that does not replace, the cycloalkyl (cycloalkyl) that replaces or do not replace, the alkoxyl (alkyloxy) that replaces or do not replace, the alkenyl (alkenyl) that replaces or do not replace, replacement or amido, the replacement that does not replace or the aromatic hydroxyl that does not replace, replacement or the multiple cyclic group of aromatic series, the replacement that do not replace or the aralkyl that does not replace, Ar in addition
1～Ar
6The fragrant heterocyclic radical that can be multiple cyclic group of aromatic hydroxyl, replacement that replaces or do not replace or the aromatic series that does not replace, replacement or the aralkyl that does not replace, replacement or do not replace, and the silane that X can be oxygen, sulphur, replacement or the amido that does not replace, replacement or do not replace.
2, organic light-emitting diode element as claimed in claim 1 is characterized in that: above-mentioned each functional group's a substituting group comprises halogen, cyano group or nitro.
3, organic light-emitting diode element as claimed in claim 1 is characterized in that: the glass transition temperature of this organic compound is higher than 100.
4, organic light-emitting diode element as claimed in claim 1 is characterized in that: this metal that is mixed in this organic compound comprises an alkali metal group metal, an alkaline earth metal or a transition metal.
5, organic light-emitting diode element as claimed in claim 4 is characterized in that: this alkali metal group metal comprises lithium, sodium, potassium, rubidium or caesium.
6, organic light-emitting diode element as claimed in claim 4 is characterized in that: this alkaline earth metal comprises beryllium, magnesium, calcium, strontium or barium.
7, organic light-emitting diode element as claimed in claim 4 is characterized in that: this transition metal comprises yttrium, lanthanum, samarium or uranium.
8, organic light-emitting diode element as claimed in claim 1 is characterized in that: the content of this metal that mixes in this organic compound is 1%～3%.
9, organic light-emitting diode element as claimed in claim 1 is characterized in that: the thickness of this metal-doped layer is between between the 0.5nm to 100nm.
10, organic light-emitting diode element as claimed in claim 1 is characterized in that: also comprise an electric hole transport layer, be configured between this anode and this organic luminous layer.
11, organic light-emitting diode element as claimed in claim 10 is characterized in that: the material of this electricity hole transport layer is selected from three fragrant Ammonia derivatives, and it comprises TPD and NPB.
12, organic light-emitting diode element as claimed in claim 1 is characterized in that: also comprise an electron transfer layer, be configured between this metal-doped layer and this organic luminous layer.
13, organic light-emitting diode element as claimed in claim 12 is characterized in that: the material of this electron transfer layer be selected from AlQ3, Bebq2, TAZ and BCP one of them.
14, organic light-emitting diode element as claimed in claim 1 is characterized in that: also comprise an electric hole implanted layer, be configured between this anode and this organic luminous layer.
15, organic light-emitting diode element as claimed in claim 1 is characterized in that: also comprise an electron injecting layer, be configured between this organic luminous layer and this metal-doped layer.
16, a kind of material that is applied to organic light-emitting diode element is characterized in that: the composition of this material is for mixing a metal of 0.5%～10% in an organic compound, and the chemical formula of this organic compound is suc as formula (1):
Formula (1)
Wherein, R
1～R
6Be independently hydrogen atom, replacement out of the ordinary or the alkyl (alkyl) that does not replace, the cycloalkyl (cycloalkyl) that replaces or do not replace, the alkoxyl (alkyloxy) that replaces or do not replace, the alkenyl (alkenyl) that replaces or do not replace, replacement or amido, the replacement that does not replace or the aromatic hydroxyl that does not replace, replacement or the multiple cyclic group of aromatic series, the replacement that do not replace or the aralkyl that does not replace, Ar in addition
1～Ar
6The fragrant heterocyclic radical that can be multiple cyclic group of aromatic hydroxyl, replacement that replaces or do not replace or the aromatic series that does not replace, replacement or the aralkyl that does not replace, replacement or do not replace, and the silane that X can be oxygen, sulphur, replacement or the amido that does not replace, replacement or do not replace.
17, the material that is applied to organic light-emitting diode element as claimed in claim 16 is characterized in that: above-mentioned each functional group's a substituting group comprises halogen, cyano group or nitro.
18, the material that is applied to organic light-emitting diode element as claimed in claim 16 is characterized in that: a glass transition temperature of this organic compound is higher than 100.
19, the material that is applied to organic light-emitting diode element as claimed in claim 16, it is characterized in that: this metal that is mixed in this organic compound comprises an alkali metal group metal, an alkaline earth metal or a transition metal.
20, the material that is applied to organic light-emitting diode element as claimed in claim 19 is characterized in that: this alkali metal group metal comprises lithium, sodium, potassium, rubidium or caesium.
21, the material that is applied to organic light-emitting diode element as claimed in claim 19, it is characterized in that: this alkaline earth metal comprises beryllium, magnesium, calcium, strontium or barium.
22, the material that is applied to organic light-emitting diode element as claimed in claim 19, it is characterized in that: this transition metal comprises yttrium, lanthanum, samarium or uranium.
23, the material that is applied to organic light-emitting diode element as claimed in claim 16 is characterized in that: the content of this metal that mixes in this organic compound is 1%～3%.
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| Publication number | Priority date | Publication date | Assignee | Title |
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2002
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| CN103026527B (en) * | 2010-05-28 | 2015-12-16 | 原子能和代替能源委员会 | There is the opto-electronic device burying electrode underground |
| CN110400826A (en) * | 2019-07-09 | 2019-11-01 | 深圳市华星光电技术有限公司 | Display panel and display device |
| WO2021003801A1 (en) * | 2019-07-09 | 2021-01-14 | 深圳市华星光电技术有限公司 | Display panel and display device |
| CN110400826B (en) * | 2019-07-09 | 2022-06-10 | Tcl华星光电技术有限公司 | Display panel and display device |
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| Publication number | Publication date |
|---|---|
| CN1278432C (en) | 2006-10-04 |
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Granted publication date: 20061004 Termination date: 20121211 |