CN1506767A - Method for detemining photoetching projection parameter, device producing method and device - Google Patents
Method for detemining photoetching projection parameter, device producing method and device Download PDFInfo
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
The method involves the steps of: selecting features of the pattern to be imaged; notionally dividing the source in to a plurality of source elements; for each source element, calculating the process window for each selected feature and then the OPC rules that optimize the overlap of the calculated process windows. Finally, those source elements are selected for which the overlapping of the process windows and the OPC rules satisfy specified criteria. The selected source elements define the source intensity distribution.
Description
Technical field
The present invention relates to determining of parameter, specifically, relate to the processing window that radiation source intensity distributes, optical proximity correction is regular and adopt the lithographic projection of lithographic projection apparatus, more particularly, described lithographic projection apparatus comprises:
-radiating system is used to provide the tomographic projection light beam;
-supporting construction is used to support pattern and forms device, and pattern forms device and is used for making projected light beam have pattern according to required pattern;
-substrate holder is used for fixing substrate;
-optical projection system, the light beam that is used for having pattern projects the target part of substrate.
Background technology
Terminology used here " pattern formation device " should be broadly interpreted as the cross section that radiation laser beam that expression can be used for giving input has pattern, and described pattern is corresponding to the pattern that will partly set up in the target of substrate; Also can use term " light valve " in this case.In general, described pattern is corresponding to the particular functional layer in the device of being set up in the target part such as integrated circuit or other device (referring to the following stated).The example that this pattern forms device comprises:
-mask.The notion of mask is well-known in photoetching technique, and it comprises mask-type and various hybrid mask types such as binary, alternating phase-shift, attenuating phase-shift.According to the pattern on the mask, the setting of this mask in radiation laser beam shines on the mask selective transmission (under the situation of transmission mask) of described radiation or reflection (under the situation of reflection mask).Under the situation of mask, supporting construction generally is a mask holder, and it guarantees that mask can be fixed on the desired location in the radiation laser beam of input, can move described mask with respect to light beam where necessary.
-array of programmable mirrors.An example of this device is the matrix-addressable surface with viscoelasticity key-course and reflecting surface.The ultimate principle of this equipment is: the addressed areas of (for example) reflecting surface is with the form of diffraction light reflection incident light, and not addressed areas with the form reflection incident light of non-diffracted light.Adopt suitable light filter, can only stay diffraction light to the filtering from folded light beam of described non-diffracted light; By this method, light beam has the corresponding pattern of addressing pattern with matrix-addressable surface.Another embodiment of array of programmable mirrors adopts the matrix layout of micro-reflector, and by applying suitable location electric field, perhaps by adopting the piezoelectric excitation device, each micro-reflector can tilt around certain axle individually.Same reason, described catoptron is a matrix-addressable, therefore, the catoptron that is addressed will be with the direction reflection input radiation light beam of the catoptron that is different from not addressing; By this method, make folded light beam have the corresponding pattern of addressing pattern with the catoptron of matrix-addressable.Required matrix addressing operation can adopt suitable electronic installation to carry out.In the above two kinds of cases, pattern formation device can comprise one or more array of programmable mirrors.The more information of the relevant reflection mirror array that this paper quoted can be incorporated in this with it by reference referring to for example United States Patent (USP) 5296891, United States Patent (USP) 5523193 and PCT patented claim WO98/38597 and WO98/33096.Under the situation of array of programmable mirrors, described supporting construction can realize that for example it can be fixed or movable as requested by the mode of framework and plate.
-Programmable LCD array.In United States Patent (USP) 5229872, provide an example of this structure, by reference it is incorporated in this.As mentioned above, supporting construction in this case can realize that for example, it can be fixed or movable as requested according to the form of framework or plate.
For the sake of brevity, the remainder of this paper may be particularly at the example that relates to mask and mask holder in some place; But, should on the broad scope of above-mentioned pattern formation device, understand the General Principle of discussing in these situations.
For example, lithographic projection apparatus can be used for making integrated circuit (IC).In this case, pattern formation device can produce the circuit pattern corresponding to each layer of IC, and this pattern can be mapped to the target part (for example comprising one or more chips) on the substrate (silicon chip) of having used one deck radiation-sensitive materials (resist) coating.In general, single-chip comprises the whole network of the adjacent part that shines successively one at a time by optical projection system.In current device, adopt pattern to form operation by the mask on the mask holder, can distinguish two kinds of dissimilar machines.In the lithographic projection apparatus of a type, whole mask pattern is exposed to target partly shines each target part by disposable; The so-called wafer stepper of this equipment.In the another kind of equipment that is called the substep scanning device, by under projected light beam, scanning mask pattern gradually with given reference direction (" scanning " direction), while synchronous scanning be parallel to or antiparallel in the substrate holder of this direction, shine each target part; Therefore, in general, optical projection system has magnification M (usually＜1), and the speed V of scanning substrate holder is the speed that coefficient M multiply by the scanning mask holder.More information about lithographic equipment as herein described can be incorporated in this with it by reference referring to for example US 6046792.
In the manufacture process that adopts lithographic projection apparatus, pattern (for example in mask) is mapped to the substrate of small part by one deck radiation-sensitive materials (resist) covering.Before this image-forming step, substrate can pass through various steps, for example priming operation, be coated with resist and soft baking.After exposure, substrate can pass through other step, bakes (PEB), development, hard cure after for example exposing and to the measurement/check of the details of imaging.This process series is carried out the basis that pattern forms step with the individual course of doing device such as IC.Then, this have patterned layer and can pass through various processes, and for example etching, ion inject (doping), chemically mechanical polishing etc., all are used to realize individual course.Several layers if desired then must be to each new layer whole process repeated or its modification.At last, one group of device appears on the substrate (wafer).Then, these devices are separated from one another by the technology such as cutting or sawing, so far, independent device can be installed on the carrier, be connected to pin or the like.For example, from " microchip manufacturing: the practice guideline of semiconductor processes " (third edition, author Peter van Zant, McGraw Hill Publishing Co., 1997, ISBN 0-07-067250-4) can obtain more information in, by reference it is incorporated in this about these processes.
For for purpose of brevity, below optical projection system is called " lens "; But this term should be broadly interpreted as and comprise various types of optical projection systems, comprising for example reflective optics and mirror-lens system.Radiating system also can comprise the element according to any work in these kind of designs, is used for the projected light beam of radiation is carried out orientation, shaping or control following be called " lens " of these elements common or singlely.In addition, lithographic equipment can belong to have two or more substrate holders type of (and/or two or more mask holders).In these " multistage " device, can walk abreast and use other plate, perhaps can carry out preliminary step to one or more plates, other one or more plates are used for exposure simultaneously.For example, in US 5969441 and WO98/40791, describe the twin-stage lithographic equipment, by reference it has been incorporated in this.
In photoetching technique, there is the problem that is called optical proximity effect.This is that the intrinsic difference of the diffractogram compared with dense feature by isolation characteristic causes.Dense feature can comprise embedded pattern and tight periodic characteristic.When printing intensive and more isolation circuits simultaneously, optical proximity effect causes the difference of critical dimension (CD).Even when these circuits are identical on mask, but they are different when printing.
Optical proximity effect also depends on used illumination setting.At first adopted usually said traditional lighting pattern, it has discoid intensity distributions on the projecting lens hole.But along with trending towards that less feature is carried out imaging, the off-axis illumination pattern has become criterion, so as to improve the processing window of little feature, promptly the exposure and/or concentration range.But for the off-axis illumination pattern, as ring illumination, optical proximity effect can variation.
A solution of this problem is by making the different characteristic on the layering Butut expanded view have deviation to come contiguous revise (OPC) of applied optics.For example, according to a kind of biasing of form, by make more isolation circuits on the layering Butut expanded view thicker a little, make that they are with printed these features of setovering of the lateral dimension identical with dense wire in the image of substrate.In the biasing of another kind of form, use the end face correction, make no matter isolate or dense wire all adopts correct length to print.But in less spacing and when having off-axis illumination, CD is big more with the variation of spacing, that must apply, and line bais is many more, and it is more complicated to setover." supplemental characteristic " that be called " scattering strip " on optical proximity correction (OPC) the employing layering Butut expanded view of another kind of form comes the diffraction of Change Example such as isolation characteristic, makes it printed with correct size.For example, in US 5821014 and " automatic paralleling optical proximity correction and verification system " (people such as Watanabe, SPIE Vol.4000, the 1015th to 1023 page), discussed OPC.
The technology that is used for optimizing according to the pattern of imaging the spatial intensity distribution of radiation source also is known.According to a kind of method, radiation source is divided into some, to be equivalent on each piece or the form of the pointolite that connects or disconnects is simulated described system.For each source point, calculate the intensity that is produced on the point of selection of substrate successively.Then, optimizer is used to calculate the best source that comprises a plurality of light source pieces and distributes, so that intensity that makes on the substrate to be calculated and the difference minimum between the ideal tensile strength on the substrate are used for best impressing pattern.Another kind of technology is to calculate the actual strength of each piece of radiation source and the difference between the ideal tensile strength, and arranges with rank order.By accepting the source piece by rank order, reaching threshold value until illumination and obtain whole illumination intensity distribution.Can obtain the details of these technology from US6045976, by reference it is incorporated in this.
As everybody knows,, require advanced software algorithm and extremely complicated mask manufacturing for OPC, for source optimization, the advanced software of same requirement.Have such problem: with OPC with optimize illumination intensity distribution simultaneously and provide suitable processing window to combine satisfactorily for characteristic range or feature group with sufficient process scope.
Summary of the invention
An object of the present invention is to alleviate at least in part the problems referred to above.According to the present invention, a kind of method is provided, be used for determining that the pattern that uses for lithographic projection apparatus forms the distribution of projected light beam source strength and the optical proximity correction rule of device, described lithographic projection apparatus comprises:
-radiating system is used to provide the tomographic projection light beam;
-supporting construction is used to support pattern and forms device, and pattern forms device and is used to make projected light beam to have and the corresponding pattern of required pattern;
-substrate holder is used for fixing substrate; And
-optical projection system is used for described light beam with pattern is projected the target part of substrate,
Described method is characterised in that and may further comprise the steps:
Select a plurality of features of required pattern to be mapped;
Abstractively the radiation in the radiating system is divided into the multiple source element;
For each source element: calculate each selection feature processing window and determine to optimize the overlapping optical proximity correction rule of described calculation process window;
Select such source element: for these source elements, the overlapping and optical proximity correction of processing window is regular to satisfy designation criteria; And
Output is about the data of the following: the source element of selection, and its definition source strength distributes; And optical proximity correction rule.
Another aspect of the present invention provides a kind of computer system, described computer system comprises data processor and data storage device, data processor is suitable for coming deal with data according to the executable program that is stored in the data storage device, and wherein said executable program is suitable for carrying out said method.
The present invention also provides a kind of computer program, and described computer program comprises the computer program that is used for carrying out the program code devices of said method on computers and transmits described computer program.
Another aspect of the present invention provides a kind of method of utilizing lithographic projection apparatus to make device, and described lithographic projection apparatus comprises:
-radiating system is used to provide the tomographic projection light beam;
-supporting construction is used to support pattern and forms device, and pattern forms device and is used to make projected light beam to have and the corresponding pattern of required pattern;
-substrate holder is used for fixing substrate; And
-optical projection system, the light beam that is used for having pattern projects the target part of substrate,
Said method comprising the steps of:
A kind of substrate is provided, and described substrate is covered by one deck energy-sensitive material at least in part;
The pattern that provides a kind of hope on substrate, to set up;
On supporting construction, provide pattern to form device;
Set up source strength and distribute in radiating system, described radiating system corresponds essentially to the summation of source element of the selection of said method output;
The pattern that is mapped to optical proximity correction rules modification on the substrate, that export according to the method described above according to hope comes define pattern to form the pattern of device; And
In the processing window of said method output, utilize radiation laser beam with pattern, utilize the source strength of being set up to distribute and defined pattern form device with described substrate on the target area exposure of energy-sensitive material layer.
The present invention also provides a kind of device of making according to the said method of making device.
Be used to make IC although specifically mention equipment according to the present invention in this article, should be appreciated that undoubtedly this equipment has many other possible application.For example, it can be used for making the guiding of integrated optics system, magnetic domain memory and test pattern, LCD panel, thin-film head etc.The technician knows, under the situation of these alternative application, the use of term herein " layering Butut expanded view ", " wafer " or " chip " should be considered respectively by more generally term " mask ", " substrate " and " target part " replace.
In this article, term " radiation " and " light beam " are used to comprise all types of electromagnetic radiation, comprising ultraviolet radiation (for example having wavelength 365,248,193,157 or 126nm) and EUV (far ultraviolet radiation, for example have wavelength coverage 5-20nm), and the particle beams such as ion beam or electron beam.
Description of drawings
Now only as an example, embodiments of the invention are described, in the accompanying drawing with reference to accompanying schematic figure:
Fig. 1 illustrates lithographic projection apparatus according to an embodiment of the invention;
Fig. 2 is the process flow diagram that explanation embodies the summary of method of the present invention;
Fig. 3 schematically illustrates the feature of the pattern for the treatment of imaging;
Fig. 4 (a), 4 (b) and 4 (c) illustrate the distinct methods that radiation source is divided into source element;
Fig. 5 schematically illustrates the another kind of structure that in accordance with another embodiment of the present invention radiation source is divided into element;
Fig. 6 (a), 6 (b) and 6 (c) schematically illustrate the optimization of the processing window and the overlapping processing window of specific pattern feature; And
Fig. 7 schematically illustrates the source element of collecting to select best radiation source according to overlapping processing window and optical adjacent simultaneously.
Embodiment
Embodiment 1
Fig. 1 illustrative is according to the lithographic projection apparatus of one particular embodiment of the present invention.Described equipment comprises:
-radiating system Ex, IL are used to provide the projected light beam PB of radiation (for example EUV radiation), also comprise radiation source LA under this particular case;
-the first thing frame (mask holder) MT, it is equipped with the mask seat that is used for fixing mask MA (for example layering Butut expanded view) and is connected to and is used for making exactly first locating device of mask with respect to element PL location;
-the second thing frame (substrate holder) WT, it is equipped with the block substrate that is used for fixing substrate W (for example applying the silicon wafer of resist) and is connected to and is used for making exactly second locating device of substrate with respect to element PL location;
-optical projection system (" lens ") PL (for example refraction or mirror-lens system, reflector group or field deflection device array) is used for the illuminated portion of mask MA is mapped to the target portion C (for example comprising one or more chips) of substrate W.As described herein, described equipment belongs to transmission-type (having transmission mask in other words).But in general, it also can belong to for example reflection type (for example having reflection mask).Another kind of alternatives is that described equipment can adopt another kind of pattern to form device, for example array of programmable mirrors of the above-mentioned type.
Source LA (for example being arranged on electron beam path undulator on every side in plasma LPP, storage ring or the synchrotron that mercury lamp, excimer laser, discharge source, laser produce) produces radiation laser beam.Feed-in illuminator (illuminant) IL after described light beam or direct feed-in or the regulating device of process such as optical beam expander Ex.Illuminant IL can comprise adjusting gear AM, is used for being provided with the outside and/or the inner radial scope (generally being called the outside and σ inside of σ respectively) of light beam intensity distributions.In addition, it generally comprises various other elements, for example integrator IN and condenser CO.Like this, the light beam PB that is radiated on the mask MA has required homogeneity and intensity distributions on its cross section.
Should be understood that about Fig. 1, source LA can be positioned at (for example normally this situation when source LA is mercury lamp) within the lithographic projection apparatus shell, but also can be away from lithographic projection apparatus, the radiation laser beam feed-in equipment that it produced (for example by means of suitable directional mirror); The situation of latter event when normally source LA is excimer laser.The present invention and claims comprise both of these case.
Light beam PB intersects with the mask MA that is fixed on the mask holder MT subsequently.Through being reflected selectively by mask MA, light beam PB scioptics PL, the latter gather light beam PB the target portion C of substrate W.By means of second locating device (interfering meter measuring device IF), substrate holder WT can move exactly, thereby for example locatees different target portion C in the path of light beam PB.Equally, for example after machine searching is carried out to mask MA in the mask storehouse or scanning process, first locating device can be used for exactly mask MA with respect to the path of light beam PB and locate.In general, by means of long stroke module of clearly not describing among Fig. 1 (coarse positioning) and short stroke module (thin location), realize moving of thing frame MT, WT.But under the situation of wafer stepper (relative with step-scan equipment), mask holder MT can only be connected on the short stroke driver or can fix.
Described equipment can be used for two kinds of different modes:
1. in step-by-step system, it is static that mask holder MT keeps fully, and whole mask images disposable (i.e. single " sudden strain of a muscle ") projects to the target portion C.Substrate WT then moves up at x and/or y, makes different target portion C can be subjected to light beam PB irradiation.
2. in scan mode, occur identical situation basically, only given target portion C is not exposed with single " sudden strain of a muscle ".On the contrary, mask holder MT can move with speed v so that make projected light beam PB scanning mask images according to assigned direction (usually said " direction of scanning ", for example y to); Simultaneously, substrate holder WT moves with speed V=Mv according to identical or reverse direction simultaneously, and wherein M is the magnification (M=1/4 or 1/5 usually) of lens PL.By this method, can expose to bigger target portion C, and can not damage resolution.
The lithographic projection apparatus of Fig. 2 explanation and Fig. 1 is used, embodies the process flow diagram of a kind of method of the present invention.At step S10, be mapped to pattern on the substrate for hope, select a plurality of features, and to specify the size surplus of its permission be critical dimension.Fig. 3 schematically illustrates the part of pattern to be mapped, three features the 11,12, the 13rd that annular is represented, the example of the feature of selecting.Carry out further initialization at step S10, so as optical proximity correction (OPC) scope that definition allows, just to admissible feature biasing (for example widen or extend) quantitative limitation and to the restriction of supplemental characteristic size, and select acceptable minimum overlay processing window OPW threshold value.Illustrate that the lower limit what OPW remains acceptable can define from the following aspect: 1) the maximum focusing range of OPW; 2) the maximum exposure scope of OPW; 3) 1) and 2) function, the two product for example; 4) area of OPW; Perhaps 5) combination of above-mentioned factor for example adopts the logical operator such as AND and OR to make up.
Do not need to carry out above step and step S20 to S40 for as shown in Figure 1 actual lithographic projection apparatus, will carry out above step and step S20 to S40 undoubtedly but adopt the computer module of analog physical equipment thereby pattern, illuminator, projecting lens or the like to be expressed as under the situation of numerical data.Therefore, should be understood to comprise respective virtual item in the computer module undoubtedly with reference to these projects.
At step S20, radiation source is divided into some elements abstractively.Should be understood that, " the projected light electron gun " of expression used herein " radiation source " or equivalence can refer to produce the actual source such as laser instrument of radiation, perhaps can refer to the part in the radiation path for example, it is as virtual or " second " source, integrator or other device for example, " source " that described integrator or other device have been regulated radiation and be effective as subsequent item in the beam path.In following examples, radiation source comprises the light beam on the unthreaded hole of illuminator.Unthreaded hole is normally circular, is schematically represented by the circle 14 among Fig. 4 (a).Complete radiation source has the intensity distributions that becomes with corresponding to position in the unthreaded hole 14 of the angle intensity distributions that is incident upon the radiation on the mask.
As mentioned above, for the calculating according to the method for this embodiment, radiation source is divided into a plurality of elements, and each element is corresponding to the zone or the pixel in source.Each source element can " be connected " or " disconnection ".Whole source can be regarded the summation of the element of " connection " as.In order to simplify calculating, each source element can be approximately point source, shown in the cross symbols among Fig. 4 (a).According to an embodiment, below successively the source is divided for the described calculating of step S20 each elemental areas, be that each point on the grid of Fig. 4 (a) is carried out, so that topped whole unthreaded hole.
But, because of center far away requires the source on the unthreaded hole to have certain symmetry, that is to say that the center of gravity of distribution preferably is positioned at the unthreaded hole center usually.Therefore, according to another embodiment shown in Fig. 4 (b), by unthreaded hole 14 is divided into two halves, each source element that wherein is used to calculate comprises two daughter elements 15,16, every partly one, opposite fully with respect to optical axis (unthreaded hole center), just be enough to construct a symmetrical source.Like this, the single source " element " that is used to calculate can be made up of a plurality of daughter elements 15,16.In this example, the source by only considering half (by the grid representation of the left-half of Fig. 4 (b)), and the source of adopting symmetry to produce second half, calculated amount reduces half.
According to another embodiment shown in Fig. 4 (c), unthreaded hole is divided into quadrant, and each source element comprises four daughter elements that the source was obtained of representing with the cross symbols that produces on 16,17,18 in other three quadrants by the point source 15 in Z-axis and transverse axis reflection first quartile.In fact, this equally also can carry out work, because the fact is: the positive exponent of diffractogram generally is identical with negative rank, and calculated amount can be reduced to 1/4th approximately.
As Fig. 4 (a) and (b) and (c), source element is positioned on the rectangular node, but this just constructs an example of source element; Can according to circumstances adopt other suitable division, for example hexagonal mesh or the point source arranged according to polar coordinates.Source unthreaded hole 14 also can be divided into six or the zone except that two or four.The accurate position of net region can be arbitrarily in the unthreaded hole.
Below with reference to Fig. 5 explanation set up the synthetic source element, another improved embodiment of the source element promptly formed by a plurality of point sources.(i) left-half of unthreaded hole is divided into the grid of N point, shown in the upper left of Fig. 5.One of these points corresponding symmetric points in the right half part of unthreaded hole are selected, shown in two cross symbols.(ii) the latter half of unthreaded hole is divided into the grid (M can be identical with N) of M point, and another is selected symmetrical source point, shown in two little squares in the middle illustration of going up of Fig. 5.(iii) as described below, the source element of choosing at last that is used for the calculating of step S20 is from step (i) and two summations that the source is right (ii), in other words, source element comprises in the upper right portion of Fig. 5 four daughter elements shown in two cross symbols and two squares.Then, step (ii) and (iii) is repeated M time, and it is right to handle all M " on/down " source point, makes source from step (i) to remaining unchanged; And then return step (i), and make " left side/right side " source to being incremented to down a pair of point, repeating step is (ii) and (iii) M time more subsequently.Repeat this process, up to all N " left side/right side " source to all M " on/down " source to being calculated, provide M*N source element summation, schematically describe in the right-hand column as Fig. 5.In these M*N source element of the pattern characteristics of each selection each carried out OPC of the following stated and the analysis of OPW.
The source unthreaded hole is divided into a left side/right side with level and vertical divider and last/following aliquot also can be carried out according to being different from described mode, for example rotates arbitrarily angled and/or not necessarily is perpendicular to one another.Unique criterion is the direction difference of separator bar.This embodiment has been described in conjunction with unthreaded hole is divided into aliquot (shown in Fig. 4 (b)), but for the not division as Fig. 4 (a) shown in or shown in Fig. 4 (c) be divided into quadrant or other division can be carried out equally.
At step S20, for each source element ( daughter element 15,16,17 and 18 that for example comprises Fig. 4 (c)), continue to calculate the processing window of each feature of selecting, as described in Chris A Mack " Inside Prolith " (ISBN 0-9650922-0-8) the 10th chapter in 1997.
Fig. 6 (a) is the feature 11,12 selected for source element of graphic extension and 13 processing window 21,22 and 23 schematically.Processing window defines and will produce the dosage of acceptable feature printing and the scope of focusing (being exposure latitude EL and focusing tolerance (focusing on the degree of depth of DOF)) in the size surplus of definition.And then definite OPC rule, its optimizing process window overlapping.For example by applying biasing so that reduce local dose effectively to the structure that has than large-spacing, this process is simple.Owing to reduced local dose effectively, therefore push away on the processing window of described feature, therefore need heavy dose of so that with described feature exposure.This schematically is illustrated among Fig. 6 (b), and in the figure, the result who uses fixed OPC rule moves, makes it overlapping to greatest extent from the position of Fig. 6 (a) processing window 21,22 and 23.Apply biasing with applying biasing or replacing, the use that can comprise supplemental characteristic in the OPC rule is so that optimizing process window overlapping.Can and be included in wherein the bibliographic reference data from " silicon treatment process " (ISBN 0-9616721-6-1) of S Wolf and R N Tauber and obtain about determining the more information of OPC rule.Except along the position of the processing window of dosage among Fig. 6 (b) and focal axis, use shape and size that the described result who determines the OPC rule also influences processing window among Fig. 6 (b).Therefore, according to the present invention, the shape of computation process window 21,22,23 and/or the additional step of size variation, the additional step of OPC rule etc. has been determined in the additional step of overlapping definite OPC rule of optimizing process window and application thereafter, can comprise in the method.
Fig. 6 (c) illustrates the overlapping processing window OPW of result of expression available processes window, wherein for given source element and by using the OPC rule of calculating, can successfully print the feature of selection.Repeat this process, thereby each source element is determined one group of OPC rule, and obtain best OPW.
Fig. 7 is the result's of step S20 a synoptic diagram.Each cross symbols is represented the OPC and the OPW diagram of particular source element.Fig. 7 just helps to understand the two-dimensional diagram of signal of the present invention.In fact, each organizes the OPC rule can be expressed as multi-C vector with mathematical way, and cross symbols is arranged in the multi-C vector space.As mentioned above, OPW is characterised in that a plurality of parameters, for example exposure latitude, focusing tolerance, window area or its combination.The OPW criterion can be combined as a value that is drawn as perpendicular line among Fig. 7.For example, the value that is drawn as perpendicular line can be represented a kind of function: have [the maximum DOF of OPW] about the threshold value of [the maximum exposure tolerance of OPW] about the threshold value A ND of [the maximum DOF of OPW].This function can be written as on mathematics: MaxDOF ﹠amp; (MaxDOF＞F ﹠amp; MaxEL＞E).This will be drawn as curve to the MaxDOF of those source points, and wherein MaxDOF is greater than the value F that selects, and MaxEL is greater than the value E that selects simultaneously.This is an example.Can consider other many combinations.
According to step S30, must estimate radiation source element and the radiation source element of choosing those intensity distributions that will form best source.At first, the source element of selection must have the OPW of the minimum threshold that satisfies step S10 appointment.Described threshold value is represented by the horizontal dotted line among Fig. 7.For example, the maximum depth of focus of described threshold value can be greater than 0.3 μ m, and maximum exposure tolerance (EL) can be greater than 7%.In this example, threshold value is used an above parameter.Can eliminate source element corresponding to the cross symbols under the lines.Can carry out above process to above-mentioned functions be used for the drawing curve of Fig. 7 each point effectively.
Secondly, source element must have complete public OPC regular collection so that there is consistance when the pattern of design such as mask forms device.According to realizing a kind of method of the present invention, carry out in the zone that comprises the high density cross symbols with similar OPC in the pattern of this process by marked graph 7.Suitable zone is by 30 expressions of the imaginary ellipse among Fig. 7.From mathematics, this method step is sought the zone with high density point in multidimensional OPC vector space.Select each point then, begin in high-density region, wherein main criteria is to have sufficient source element, makes whole illumination fully bright; For example in order to put into practice needs, at least 10% source unthreaded hole area must be illuminated.Therefore, not necessarily there be strict the restriction in the scope of the OPC value of the source element selected; This will depend on the dot density of particular case, still, optimum criterion beyond doubt: the OPC value is identical as far as possible, make selection source element point the OPC value expand to minimum.
Undoubtedly, everybody understands, and for method of the present invention, does not need to mark source element as shown in Figure 7, and in fact this is not that the physics of multidimensional OPC vector is possible.Fig. 7 just helps to understand graphic extension of the present invention.Calculating can be undertaken by the processor of handling related data.
After choosing the source element collection, determine the final set of OPC rule at step S35.The OPC vector of the public OPC vector of the source element by being similar to selection provides the OPC rule set effectively.In step S35, the final set of OPC rule preferably adopts the whole best source of the source element summation that comprises selection to determine, rather than adopts source element separately.The OPC rule adopts the known software routine of optimizing OPW as mentioned above to determine.
At step S40, the result of output optimization method.These results comprise the radiation source groups elements of expression selection and the data of OPC rule set.Can also randomly rather than export the processing window of the source element grouping of selection necessarily.With reference to Fig. 7, the radiation source groups elements of selection is corresponding to the cross symbols in the zone 30.Best radiation source intensity distribution is provided by the summation of these elements.Processing window information can help to adopt the correct exposure to pattern of OPC rule and best source, but this information is dispensable for the photoetching technique equipment of setting such as steeper or scanner.
The equipment of the method for execution in step S10 to S40 is the ingredient of lithographic projection apparatus shown in Figure 1 not necessarily, can be to have the access right of the data of representing pattern to be mapped and the conventional computer system with physical property of protection equipment.Undoubtedly, described equipment can be to be exclusively used in the system that is used with lithographic projection apparatus.Carry out best or can comprise near the computer system of the calculating of best radiation source and OPC and to be stored in the data-carrier store, to carry out so that carry out the software of realizing method of the present invention by processor.
One or more in each ingredient of another step S50 of execution graph 2 randomly.The desirable strength that comprises the source distributes, can be used for constructing the actual emanations source with described intensity distributions for the data output of the radiation source groups elements of selecting.This can be undertaken by one or more light beams being formed among the illuminant IL that members are included in projector equipment, for example comprises optical devices such as grey optical filtering or spatial filtering mirror or other is used for suitable refraction, reflection, diffraction or the filtration unit that limited strength distributes.In addition, can be applicable to required pattern, so that design being used for such as mask forms device to the pattern of substrate exposure about the data of best OPC rule set.At last, described method can comprise that employing radiation source and above-mentioned pattern form device with pattern Mapping step to image exposure to substrate and in the processing window that step S40 is obtained.
Though specific embodiment of the present invention below has been described, as everybody knows, the present invention can implement according to being different from described mode.Above description is not to be used for limiting the present invention.
Claims (15)
1. a method is used for determining that the pattern that uses for lithographic projection apparatus forms the distribution of projected light beam source strength and the optical proximity correction rule of device, and described equipment comprises:
-radiating system is used to provide the tomographic projection light beam;
-supporting construction is used to support pattern and forms device, and described pattern forms device and is used to make described projected light beam to have and the corresponding pattern of required pattern;
-substrate holder is used for fixing substrate; And
-optical projection system is used for described light beam with pattern is projected the target part of described substrate,
Described method is characterised in that and may further comprise the steps:
Select a plurality of features of described required pattern to be mapped;
Abstractively the described radiation in the described radiating system is divided into the multiple source element;
For each source element: calculate each selection feature processing window and determine to optimize the overlapping described optical proximity correction rule of described computation process window;
Select the overlapping and described optical proximity correction rule of described processing window to satisfy those source elements of designation criteria; And
Output is about the data of the following: the source element of described selection, and its definition source strength distributes; And optical proximity correction rule.
2. the method for claim 1 is characterized in that: criterion or combination of criteria about the described step of selecting source element are that described overlapping processing window surpasses predetermined threshold.
3. method as claimed in claim 1 or 2 is characterized in that: a criterion about the described step of selecting source element is about the substantially the same described optical proximity correction rule of the element of described selection.
4. as claim 1,2 or 3 described methods, it is characterized in that: the step of the described source element of described selection comprises the zone that has the high density source element in the described vector space of sign by described optical adjacent rule definition.
5. method according to any one of the preceding claims is characterized in that also comprising distributing according to the source strength corresponding to the summation of the source element of described selection and calculates the step of described output optical proximity correction rule.
6. method according to any one of the preceding claims, it is characterized in that: each source element comprises four daughter elements, and they are symmetrical arranged, in all quadrants in described source each one.
7. method according to any one of the preceding claims, it is characterized in that: each source element comprises at least one group of two daughter elements, described two daughter elements are arranged on two half relative parts in described source.
8. as above claim each described method wherein, it is characterized in that: the described step that described radiation is divided into the multiple source element comprises: select first group of daughter element; Select second group of daughter element; And the combination of creating described first and second groups of daughter elements, successively as in the described source element each.
9. method according to any one of the preceding claims, it is characterized in that also comprising that generation can insert the step that the light beam of described radiating system limits member, described light beam limits the source strength that member is used for setting up in described radiating system the source element summation of the selection that corresponds essentially to described output and distributes.
10. method according to any one of the preceding claims, it is characterized in that also comprising that the pattern of generation such as mask forms the step of device, wherein, according to hope be mapped on the described substrate, determine that according to the pattern of the optical proximity correction rules modification of described output described pattern forms the pattern of device.
11. computer system, it comprises data processor and data storage device, described data processor is suitable for coming deal with data according to the executable program that is stored in the described data storage device, wherein, described executable program is suitable for carrying out each described method in the above claim.
12. a computer program, it comprises the program code means that is used for 1 to 10 each the described method of enforcement of rights requirement on computers.
13. a computer program, it carries the described computer program of claim 12.
14. a method of utilizing lithographic projection apparatus to make device, described lithographic projection apparatus comprises:
-radiating system is used to provide the tomographic projection light beam;
-supporting construction is used to support pattern and forms device, and described pattern forms device and is used to make described projected light beam to have and the corresponding pattern of required pattern;
-substrate holder is used for fixing substrate; And
-optical projection system is used for described light beam with pattern is projected the target part of described substrate,
Said method comprising the steps of:
A kind of substrate is provided, and described substrate is at least in part by the energy-sensitive layer of material covers;
The pattern that provides a kind of hope on described substrate, to form;
On described supporting construction, provide pattern to form device;
Form source strength and distribute in described radiating system, described source strength distributes and corresponds essentially to the summation of the source element of the selection of each described method output in the claim 1 to 10;
Be mapped on the described substrate, determine that according to the described pattern of the described optical proximity correction rules modification of each described method output in the claim 1 to 10 described pattern forms the pattern of device according to hope; And
Employing distributes by the source strength of using described formation and described definite pattern forms that device produces describedly has a pattern grace radiation laser beam, is exposed in the target area of the energy-sensitive material layer on the described substrate.
15. device that method according to claim 14 is made.
Applications Claiming Priority (2)
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| EP02258468 | 2002-12-09 | ||
| EP02258468.4 | 2002-12-09 |
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| CN1506767A true CN1506767A (en) | 2004-06-23 |
| CN100487573C CN100487573C (en) | 2009-05-13 |
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| CNB2003101225413A Expired - Lifetime CN100487573C (en) | 2002-12-09 | 2003-12-08 | Method for detemining photoetching projection parameter, device producing method and device |
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| US (1) | US7026082B2 (en) |
| JP (1) | JP4056462B2 (en) |
| KR (1) | KR100606491B1 (en) |
| CN (1) | CN100487573C (en) |
| DE (1) | DE60324884D1 (en) |
| SG (1) | SG121840A1 (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101788760B (en) * | 2009-01-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of optical proximity correction rule |
| CN107077077A (en) * | 2014-09-22 | 2017-08-18 | Asml荷兰有限公司 | Processing window identifier |
| CN107179625A (en) * | 2017-06-29 | 2017-09-19 | 惠科股份有限公司 | A kind of manufacture method of the spacer units of display panel, light shield and display panel |
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| JP4528580B2 (en) * | 2004-08-24 | 2010-08-18 | 株式会社東芝 | Illumination light source design method, mask pattern design method, photomask manufacturing method, semiconductor device manufacturing method, and program |
| US7246343B2 (en) * | 2004-09-01 | 2007-07-17 | Invarium, Inc. | Method for correcting position-dependent distortions in patterning of integrated circuits |
| US7372540B2 (en) * | 2004-10-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7908572B2 (en) * | 2004-10-15 | 2011-03-15 | Takumi Technology Corporation | Creating and applying variable bias rules in rule-based optical proximity correction for reduced complexity |
| US7173688B2 (en) | 2004-12-28 | 2007-02-06 | Asml Holding N.V. | Method for calculating an intensity integral for use in lithography systems |
| WO2006084479A1 (en) * | 2005-02-12 | 2006-08-17 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
| US7642019B2 (en) * | 2005-04-15 | 2010-01-05 | Samsung Electronics Co., Ltd. | Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore |
| KR100655428B1 (en) | 2005-10-24 | 2006-12-08 | 삼성전자주식회사 | Optical proximity correction system and method thereof |
| US20080158529A1 (en) * | 2006-12-28 | 2008-07-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8576377B2 (en) * | 2006-12-28 | 2013-11-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080180696A1 (en) * | 2007-01-30 | 2008-07-31 | Sony Corporation | Process window for EUV lithography |
| US8191018B1 (en) * | 2007-07-17 | 2012-05-29 | Kovio, Inc. | Methods and software for printing materials onto a substrate |
| TWI424516B (en) * | 2007-10-10 | 2014-01-21 | Asml Netherlands Bv | Method of placing a substrate, method of transferring a substrate, support system and lithographic projection apparatus |
| US8151223B2 (en) * | 2008-07-14 | 2012-04-03 | Mentor Graphics Corporation | Source mask optimization for microcircuit design |
| JP5607308B2 (en) * | 2009-01-09 | 2014-10-15 | キヤノン株式会社 | Original data generation program and method |
| US8479125B2 (en) * | 2009-03-31 | 2013-07-02 | Christophe Pierrat | Lithography modeling and applications |
| US8446565B2 (en) * | 2010-01-11 | 2013-05-21 | Macronix International Co., Ltd. | Methods of optical proximity correction in manufacturing semiconductor devices |
| CN102385242A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Method and system for manufacturing mask |
| WO2013037788A1 (en) * | 2011-09-13 | 2013-03-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for correcting the effects of electronic proximity using the deconvolution of the pattern to be exposed by means of a probabilistic method |
| US8612904B1 (en) * | 2012-11-21 | 2013-12-17 | Global Foundries Inc. | Use of polarization and composite illumination source for advanced optical lithography |
| JP6447163B2 (en) * | 2015-01-21 | 2019-01-09 | 株式会社ニューフレアテクノロジー | Drawing data creation method for energy beam drawing apparatus |
| US10459345B2 (en) * | 2015-03-06 | 2019-10-29 | Asml Netherlands B.V. | Focus-dose co-optimization based on overlapping process window |
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| US5465220A (en) | 1992-06-02 | 1995-11-07 | Fujitsu Limited | Optical exposure method |
| US6320648B1 (en) | 1998-10-12 | 2001-11-20 | Steven R. J. Brueck | Method and apparatus for improving pattern fidelity in diffraction-limited imaging |
| TWI285295B (en) * | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
| US6519760B2 (en) | 2001-02-28 | 2003-02-11 | Asml Masktools, B.V. | Method and apparatus for minimizing optical proximity effects |
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2003
- 2003-11-25 TW TW092133073A patent/TWI257524B/en active
- 2003-12-04 US US10/727,034 patent/US7026082B2/en active Active
- 2003-12-08 KR KR1020030088792A patent/KR100606491B1/en active IP Right Grant
- 2003-12-08 CN CNB2003101225413A patent/CN100487573C/en not_active Expired - Lifetime
- 2003-12-08 SG SG200307226A patent/SG121840A1/en unknown
- 2003-12-08 JP JP2003409103A patent/JP4056462B2/en not_active Expired - Lifetime
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101788760B (en) * | 2009-01-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of optical proximity correction rule |
| CN107077077A (en) * | 2014-09-22 | 2017-08-18 | Asml荷兰有限公司 | Processing window identifier |
| CN107077077B (en) * | 2014-09-22 | 2019-03-12 | Asml荷兰有限公司 | Processing window identifier |
| US10755025B2 (en) | 2014-09-22 | 2020-08-25 | Asml Netherlands B.V. | Process window identifier |
| US11379648B2 (en) | 2014-09-22 | 2022-07-05 | Asml Netherlands B.V. | Process window identifier |
| CN107179625A (en) * | 2017-06-29 | 2017-09-19 | 惠科股份有限公司 | A kind of manufacture method of the spacer units of display panel, light shield and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4056462B2 (en) | 2008-03-05 |
| DE60324884D1 (en) | 2009-01-08 |
| SG121840A1 (en) | 2006-05-26 |
| US20040137343A1 (en) | 2004-07-15 |
| TW200424793A (en) | 2004-11-16 |
| KR100606491B1 (en) | 2006-07-31 |
| CN100487573C (en) | 2009-05-13 |
| US7026082B2 (en) | 2006-04-11 |
| TWI257524B (en) | 2006-07-01 |
| KR20040050859A (en) | 2004-06-17 |
| JP2004191981A (en) | 2004-07-08 |
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