CN1497668A - Lower one atmosphere supply for fluorine to semiconductor working chamber - Google Patents
Lower one atmosphere supply for fluorine to semiconductor working chamber Download PDFInfo
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- CN1497668A CN1497668A CNA2003101029066A CN200310102906A CN1497668A CN 1497668 A CN1497668 A CN 1497668A CN A2003101029066 A CNA2003101029066 A CN A2003101029066A CN 200310102906 A CN200310102906 A CN 200310102906A CN 1497668 A CN1497668 A CN 1497668A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 229910052731 fluorine Inorganic materials 0.000 title claims description 17
- 239000011737 fluorine Substances 0.000 title claims description 17
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 129
- 238000010926 purge Methods 0.000 claims description 76
- 238000005516 engineering process Methods 0.000 claims description 41
- 238000004140 cleaning Methods 0.000 claims description 22
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 6
- 230000003134 recirculating effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 239000006187 pill Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000000605 extraction Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- -1 x=0.9~1.2 wherein Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 208000037805 labour Diseases 0.000 description 1
- 239000008141 laxative Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001543 purgative effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention is directed to a process and system for the versatile operation of process equipment, and especially semiconductor process chamber clean equipment, from any pressure level ranging from a vacuum to just less than one atmosphere absolute. The system of the present invention provides a storage vessel capable of storing gas at sub-atmospheric pressure and a vacuum pump. By using a vacuum pump, the vessel stores a reasonable quantity of gas without being pressurized above atmospheric pressure. Therefore, the entire capacity of the vessel can be supplied to the process because the vacuum pump pulls the contents from the vessel down to about 1 torr. In addition, the gas can be provided at a constant supply pressure, while providing a safe gas storage vessel, since the supply gas is never stored at a pressure above one atmosphere absolute. As a result, any leak in the vessel would result in the contents of the vessel remaining in the vessel with air in the surrounding atmosphere leaking into the tank.
Description
Background technology
1. technical field
The present invention relates generally to the technology and the system of semiconductor supply operating room gas of being used for.The invention particularly relates to and be used for supply gas to clean the technology and the system of semiconductor operating room, wherein this gas is stored in and is lower than under the atmospheric condition.
2. prior art people explanation
A key step of semiconductor device manufacturing is that the chemical reaction by the gas phase parent forms film on Semiconductor substrate.Typical sedimentary technology comprises chemical vapor deposition (CVD).Conventional hot CVD technology supply response gas is to substrate surface, at this substrate surface generation thermal activation chemical reaction on the surface of just processed substrate, to form thin layer.
Yet, be deposited in the whole operating room cavity and take place, not merely on substrate, take place.The thickest deposition occurs in the hottest zone of cavity, and this thermal region is generally area, but some zones that are deposited on other take place, or even perishing zone or directly be not exposed to the zone of gas phase parent.
These depositions may cause many problems, for example stop up the said minuscule hole of gas nozzle, destroy evenly flowing and influencing process uniformity of gas, and the window of staining the operating room, influence the ability of Processing Room.In addition, they may form particulate, the mechanical action that this particulate may be fallen on the substrate and form defective or hinder depositing system in sedimentary deposit.
For fear of such problem, the inner surface of operating room is carried out conventional cleaning so that unwanted deposition materials is removed from the cavity wall and the zone similarity of operating room.Such cleaning procedure carries out between the deposition step of each wafer or every n wafer usually.One type program comprises the dismounting cavity and with solution or each parts of solvent clean, dries the new assembly system of laying equal stress on then.This program expends a large amount of labours and time-consuming, has reduced the efficient of wafer process work production line and has increased expense.
In another cleaning procedure, molecular fluorine (F
2) and chlorine trifluoride (ClF
3) be the examples of gases of in washing and cleaning operation, using as etchant gas.Molecular fluorine is high corrosion and the dangerous gas that needs the special operational measure.Most of system needs constant relatively supply pressure so that operation is effectively carried out.Therefore, fluorine is stored under the positive pressure to adapt to this requirement.A major defect of this type compression system is that fluorine gas can spill this container and enter ambient atmosphere if the container of fluorine gas is housed to be leaked.
Summary of the invention
The invention provides and be used for technology that residue is removed from surface, semiconductor operating room.This technology may further comprise the steps:
(a) purge gas is stored in the hold-up vessel to be lower than an atmospheric pressure;
(b) under vacuum condition, purge gas is shifted out from hold-up vessel; And
(c) purge gas is passed through operating room to be cleaned.
Purge gas can with or at a distance plasma source activate down and pass through the operating room.In an embodiment of technology of the present invention, provide filter bed.Purge gas by by filter bed so that this purge gas is removed and purified to unwanted impurity.This purifies purge gas and is flowed into operating room to be cleaned then.
The present invention provides equally and has been used for recirculating process that residue is removed from surface, semiconductor operating room.This recirculating process may further comprise the steps:
(a) purge gas is stored in the hold-up vessel to be lower than an atmospheric pressure;
(b) under vacuum condition, purge gas is shifted out from hold-up vessel;
(c) purge gas is passed through at least one filter bed, purify this purge gas thus;
(d) purge gas is led to operating room to be cleaned, clean this operating room thus; And
(e) purge gas being recycled to step (c) is used for reusing in washing and cleaning operation.
Purge gas can with or at a distance plasma source activate down and pass through the operating room.Purge gas air-flow from hold-up vessel is adjusted to high concentration in the operation incipient stage, has formed the major part volume of this air-flow at the purge gas of the last stages recirculation of washing and cleaning operation.As a result, the last stages in cleaning needs the less purge gas from hold-up vessel.
The present invention provides the system that residue is removed from surface, semiconductor operating room of being used for equally, and this system comprises:
At least one container is used for storing purge gas; And
At least one vacuum pump is used for purge gas is extracted out from above-mentioned at least one container.
Purge gas is stored in this at least one container with the pressure of about 1 torr to about 750 torr scopes.
The present invention provides equally and has been used for recirculating system that residue is removed from surface, semiconductor operating room, and this recirculating system comprises:
At least one container is used for storing purge gas;
At least one vacuum pump is used for purge gas is extracted out from above-mentioned at least one container; And
At least one filtration/absorbent bed is used for filtering purge gas.
Purge gas is stored in this at least one container with the pressure of about 1 torr to about 750 torrs.
Description of drawings
Fig. 1 has illustrated the atmospheric pressure feed system that is lower than of one embodiment of the invention.
Fig. 2 has illustrated the atmospheric pressure feed system that is lower than with filtration/absorbent bed of one embodiment of the invention.
Fig. 3 has illustrated the atmospheric pressure feed system that is lower than with recirculation structure of one embodiment of the invention.
Fig. 4 illustrated one embodiment of the invention have a recirculation structure another be lower than an atmospheric pressure feed system.
Invention description
The present invention considers process equipment, semiconductor operating room cleaning equipment especially, the general operation of any stress level from vacuum to about 750 torr scopes.System of the present invention can finish this purpose at hold-up vessel that is lower than inventory of gas under the atmospheric pressure and vacuum pump by providing.By using vacuum pump, this system considers that a kind of container is in order to store an amount of gas under situation about not being forced on the atmospheric pressure.Therefore, because vacuum pump extracts the content in the container until about 1 torr out, most of capacity of this container can be supplied with technical process.
In addition, when the gas storage container of a safety is provided, surpass under the pressure condition of an absolute atmosphere because supply gas never is stored in, gas can be supplied with constant compression force.As a result, any gas leakage in the container can make the content of container remain in the container, and the air reality in the ambient atmosphere can enter in the container.Therefore, high activity and dangerous gas can be stored in the container, and needn't worry that gas leakage enters surrounding environment.
Additional benefit of the present invention be purge gas can be enough or at a distance plasma source activate down and pass through the operating room.
With reference to figure 1, the present invention is used for the system of cleaning chamber and mainly numbers 10 is described by reference.System 10 has design and is used for the storage tank or the container 14 of store washing gas.Be used for suitable purge gas of the present invention and comprise, for example fluorine gas, chlorine, ClFx and BrFx, x=1 wherein, 3,5, O
2, O
3, NF
3, perhaps their combination in any.Purge gas is that fluorine gas is more suitable.
Purge gas is supplied with the enough volumes that satisfy single washing and cleaning operation demand.For instance, this volume can be about 4 to about 8 liters.Yet this volume can depend on pending cleaning and change.Cleaning of the present invention can be used for uniting in cleaning chamber, depositing operation gap with many semiconductor technologies, and this depositing operation comprises for example SiO
2, SiNx, W, WSi, Tin, TaN, low K insulating coating, high K insulating coating, the photic etchant of Si base, the photic etchant of carbon back, perhaps any other and the CVD operation of the deposit of fluorine reaction generation volatile reaction product.
When the needs purge gas, the gas that pump 20 will be stored in the container 14 is extracted out with quality controller 32 indicated flows.Pump 20 can be any suitable vacuum pump that is used for making the purge gas outflow.Utilizing the Howleck regeneration techniques to have suitable surface passivation is suitable with the pump that the opposing fluorine corrodes.For instance, BOCEdwards IPX and EPX type pump are suitable.
Be malleation on the motor case (not shown) in order to ensure pump 20, inert gas is passed back into motor case by the bearing in the inflow pump 20 to prevent purge gas.This is crucial fail safe and durability place of this operation.In order to ensure fail safe and durability, inert gas flow to pump case with the flow of at least 1 standard liter/min.Suitable inert gas comprises, for example, and argon gas, helium, N
2, O
2, dry air, perhaps their combination in any.If corrosion process is not subjected to N
2Or O
2Influence can be used N
2And O
2Use argon gas more suitable in the present invention.
In order to prevent to make the pump overvoltage, by-pass valve 28 and bypass line 30 so that purge gas can flow back to container 14, are avoided back pressure excessive on the pump 20 in position.Purgative gas is known from experience some dilutions of generation.Because purge gas is NF for example
3Dilute by inert gas in most technologies, this dilution can not damage washing and cleaning operation.
The purge gas source that enters container 14 can be from various sources, and for example, cyclinder gas or generator pressurize.The gas that flows into container 14 is set to remain on about 550 torrs to the pressure between about 750 torrs, and it is more suitable to arrive between about 700 torrs at about 550 torrs.When needed, pump 20 is extracted purge gas out from container 14.Before technology just began, pump 20 was activated, and perhaps on the other hand, pump 20 is maintained at constant operator scheme.When needing the instruction of quality controller 32, valve 28 is closed and the mobile route that is set of purge gas flows to remote plasma chamber 36 by quality controller 32, until no longer needing purge gas.Under these conditions, the pressure of gas begins and can arrive about 750 torrs at about 550 torrs in the container 14, and descending then surpasses air feed up to demand, can make that like this pressure is low to moderate 1 torr.Therefore, if leak occurs in container 14 or supply main 12, because container is in and is lower than under the atmospheric pressure, purge gas can not leak to atmosphere.Formed the system of safety, leakproof like this.If it is required that more air accumulation surpasses technology, excessive purge gas can be discharged by pipeline 26.
With reference to figure 2, the purging system with filter bed mainly numbers 40 is described by reference.System 40 has filtration/absorbent bed 42 except the parts described in top Fig. 1.Filter bed 42 can be the combination of CFx pill, x=0.9～1.2 wherein, NaF, KF, CaF
2, NaHF
2, NaF (HF)
y, KF (HF)
y, CaF
2(HF)
y, y=1～4 wherein, perhaps their combination in any is to absorb HF, CF
4, SiF
4, and any other impurity that may in the unstripped gas that flow to container 14, exist.In this structure, filter bed has not only increased the purge gas that flow to plasma chamber 36, and allows the quality of the purge gas of supply container 14 to be lower than optimum state, has therefore reduced expense.
With reference to figure 3, the atmospheric pressure system that is lower than with recirculation structure mainly numbers 50 is described by reference.System 50 has 38 pipelines that leave from the operating room, and this pipeline is used for recirculation with the gas system of being back to.Under the situation of fluorine, in cleaning process, enter 60%～80% not being used of fluorine of cavity, and transformed back F
2May cause the gas (SiF just of particle issues in the operating room
4, CF
4, HF) by filter bed 42 from leave operating room 38 with separating the purge gas of crossing.Inert gas, for example, nitrogen and argon gas can with rich F
2Air-flow carries out recirculation together, the fluorine gas of high concentration can be supplied with remote control plasma chamber 36 so then.Like this can be with the actual use maximization of fluorine gas.
In cleaning process recycling, valve 52,56,62 and 68 is cutting out.Valve 58 and 66 is leaving.Fresh purge gas is extracted out by pump 20 from container 14, through mass flow controller 32.This gas is transfused to filter bed 42, and in this filter bed, impurity is removed from purge gas.The purge gas that purifies is imported plasma chamber 36 then and is finally flowed into operating room 38, in this operating room cleaning action takes place.Purge gas is extracted out from operating room 38 then, and in this operating room, purge gas mixed with the raw material purge gas before returning pump 20, was used for recirculation.This process recycling continues to carry out finishing until washing and cleaning operation.
The purge gas air-flow is adjusted to high concentration in the operation incipient stage, in the accounted for bigger amount of this air-flow of the purge gas of the last stages recirculation of operation process.As a result, the less raw material purge gas of last stages needs at washing and cleaning operation makes cost reduce.
With reference to figure 4, the operating room in Fig. 3 enters operator scheme, and as describing among Fig. 4, system readjusts and formed regeneration mode.In regeneration mode, valve 58,66 and 70 is cutting out.Valve 52,56,62 and 68 is leaving.Pump 64 38 is drawn to gas exhaust piping 74 and restarts operating room operation from the chamber by handling gas.In this technical process, filter bed 42 is regenerated.Inert gas, for example nitrogen flows back to this filter bed 42 by pump 20, same like this negative pressure is taken on this filter bed 42.As a result, the impurity that is absorbed in this filter bed is disengaged absorption, this filter bed of therefore having regenerated.The impurity that this desorb is got off is discharged through gas exhaust piping 26 from this filter bed by pump 20.In this process, F
2The gas supply can be full of pressure vessel 14, for washing and cleaning operation circulation is next time got ready.
The description that it should be understood that the front only is explanation of the present invention.Various alternative forms or change may design and not depart from the present invention by those this area skilled staff.Correspondingly, the invention is intended to comprise all such alternative forms, change and variation.
Claims (29)
1. be used for technology that residue is removed from surface, semiconductor operating room.This technology may further comprise the steps:
(a) above-mentioned purge gas is stored in the hold-up vessel to be lower than an atmospheric pressure;
(b) under vacuum condition, above-mentioned purge gas is shifted out from above-mentioned hold-up vessel; And
(c) above-mentioned purge gas is passed through operating room to be cleaned.
2. technology according to claim 1, wherein, above-mentioned purge gas plasma source at a distance activates down and passes through the operating room.
3. technology according to claim 1, wherein, above-mentioned purge gas activates down with remote plasma source and passes through the operating room.
4. technology according to claim 1, wherein, above-mentioned purge gas is selected from following gas: fluorine gas, chlorine, ClFx, BrFx, O
2, O
3, NF
3, and their combination in any.
5. technology according to claim 1, wherein, above-mentioned purge gas is a fluorine gas.
6. technology according to claim 1, wherein, above-mentioned hold-up vessel has about 4 liters-8 liters capacity.
7. technology according to claim 1, wherein, above-mentioned purge gas is with about 1 torr--and 750 torr pressure are stored in the above-mentioned hold-up vessel.
8. technology according to claim 1, wherein, above-mentioned operating room is the CVD operating room.
9. technology according to claim 8, wherein, above-mentioned CVD operating room is used for deposition and is selected from following material: SiO
2, SiNx, W, WSi, Tin, TaN, low K insulating coating, high K insulation tint, the photic etchant of Si base, the photic etchant of carbon back, and their combination in any.
10. technology according to claim 1 also is included in step (b) and makes inert gas by being used for extracting out from above-mentioned hold-up vessel the step of motor case of the vacuum pump of purge gas before.
11. technology according to claim 10, wherein, above-mentioned inert gas is selected from following gas: argon gas, helium, nitrogen, oxygen, dry air, and their combination in any.
12. technology according to claim 10, wherein, above-mentioned inert gas is an argon gas.
13. technology according to claim 10, wherein, above-mentioned inert gas flows in said motor shell with the flow of 1 standard liter/min at least.
14. technology according to claim 1 also is included in step (b) afterwards with the step of above-mentioned purge gas by filter bed.
15. technology according to claim 14 is characterized in that, above-mentioned filter bed comprises at least a following filter medium that is selected from: CFx pill, NaF, KF, CaF
2, NaHF
2, NaF (HF)
y, KF (HF)
y, CaF
2(HF)
y, and their combination in any.
16. be used for recirculating process that residue is removed from surface, semiconductor operating room, this recirculating process may further comprise the steps:
(a) purge gas is stored in the hold-up vessel to be lower than an atmospheric pressure;
(b) under vacuum condition, above-mentioned purge gas is shifted out from hold-up vessel;
(c) above-mentioned purge gas is passed through at least one filter bed, purify this purge gas thus;
(d) above-mentioned purge gas is led to operating room to be cleaned, thus the cleaning chamber; And
(e) above-mentioned purge gas recirculation is returned to step (c), be used in washing and cleaning operation, reusing.
17. technology according to claim 16, wherein, the above-mentioned purge gas in the step (d) plasma at a distance activates down and passes through the operating room.
18. technology according to claim 16, wherein, above-mentioned purge gas activates down with remote plasma and passes through the operating room.
19. technology according to claim 16, wherein, the purge gas in the above-mentioned hold-up vessel is adjusted to high concentration when beginning, and the purge gas of recirculation accounts for the major part volume by the purge gas of above-mentioned filter bed in process recycling.
20. technology according to claim 16, wherein, above-mentioned purge gas is selected from following gas: fluorine gas, chlorine, ClFx, BrFx, O
2, O
3, NF
3, and their combination in any.
21. technology according to claim 16, wherein, above-mentioned purge gas is a fluorine gas.
22. technology according to claim 16, wherein, above-mentioned hold-up vessel has about 4 liters-8 liters capacity.
23. technology according to claim 16, wherein, above-mentioned operating room is the CVD operating room.
24. technology according to claim 23, wherein, above-mentioned CVD operating room is used to deposit and is selected from following material: SiO
2, SiNx, W, WSi, Tin, TaN, low K insulating coating, high K insulating coating, the photic etchant of Si base, the photic etchant of carbon back, and their combination in any.
25. technology according to claim 16 also is included in step (c) and makes inert gas by being used for the step of purge gas from the motor case of the vacuum pump of above-mentioned hold-up vessel extraction before.
26. technology according to claim 25, wherein, above-mentioned inert gas is selected from following gas: argon gas, helium, nitrogen, oxygen, dry air, and their combination in any.
27. technology according to claim 25, wherein, above-mentioned inert gas is an argon gas.
28. technology according to claim 25, wherein, above-mentioned inert gas flows into the said motor shell with the flow of at least 1 standard liter/min.
29. technology according to claim 16, wherein, above-mentioned filter bed comprises and is selected from following at least a filter medium: CFx ball ball, NaF, KF, CaF
2, NaHF
2, NaF (HF)
y, KF (HF)
y, CaF
2(HF)
y, and their combination in any.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101029066A CN1497668A (en) | 2002-10-18 | 2003-10-20 | Lower one atmosphere supply for fluorine to semiconductor working chamber |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/274,250 | 2002-10-18 | ||
| CNA2003101029066A CN1497668A (en) | 2002-10-18 | 2003-10-20 | Lower one atmosphere supply for fluorine to semiconductor working chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1497668A true CN1497668A (en) | 2004-05-19 |
Family
ID=34256821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2003101029066A Pending CN1497668A (en) | 2002-10-18 | 2003-10-20 | Lower one atmosphere supply for fluorine to semiconductor working chamber |
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| Country | Link |
|---|---|
| CN (1) | CN1497668A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571121A (en) * | 2019-09-17 | 2019-12-13 | 江苏鲁汶仪器有限公司 | Ion beam etching device and method for self-cleaning by adopting remote plasma |
-
2003
- 2003-10-20 CN CNA2003101029066A patent/CN1497668A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571121A (en) * | 2019-09-17 | 2019-12-13 | 江苏鲁汶仪器有限公司 | Ion beam etching device and method for self-cleaning by adopting remote plasma |
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