CN1497641A - Manufacturing method of gas-tight container, manufacturing method of image display device and binding method - Google Patents
Manufacturing method of gas-tight container, manufacturing method of image display device and binding method Download PDFInfo
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- CN1497641A CN1497641A CNA2003101024984A CN200310102498A CN1497641A CN 1497641 A CN1497641 A CN 1497641A CN A2003101024984 A CNA2003101024984 A CN A2003101024984A CN 200310102498 A CN200310102498 A CN 200310102498A CN 1497641 A CN1497641 A CN 1497641A
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Abstract
A bonding method using a bonding agent is provided, which has the steps of forming an underlayer on a first member, providing a bonding agent on the underlayer, forming a contact member, different from the bonding agent, on a second member, bringing the bonding agent into contact with the contact member so that the first member and the second member are bonded to each other. In the method described above, the wettability of the bonding agent to the underlayer is superior to that of the bonding agent to a surface of the first member before the underlayer is formed thereon, and the bondability of the bonding agent to the contact member is superior to that of the bonding agent to a surface of the second member before the contact member is formed thereon.
Description
Technical field
The present invention relates to the adhering method between the member.Also relate to gas-tight container or manufacturing method of anm image displaying apparatus.
Background technology
Be extensive use of gas-tight container.Particularly in the field of image display device, the manufacturing of gas-tight container is a kind of important technology.
Now, as image display device, generally use Brown tube (CRT) widely.Recently, the Brown tube of display frame above 30 inches also goes on the market.
In addition,, for example have as the tabular image display device: with UV-irradiation on fluorophor, the plasma display (PDP) that the activating fluorescent body is luminous; With electric field emission type electronic emission element (FE) or surface conductive type electronic emission element as electron source, make from above-mentioned electronic emission element electrons emitted and be radiated on the fluorophor tabular image display device that the activating fluorescent body is luminous etc.Begun to sell the PDP of the big picture about 40 inches on the market.
Secondly, above-mentioned image display device has gas-tight container, so when making image display device, implement to form the operation of gas-tight container.For example, known substrate and the substrate bonding that has formed fluorophor with electron source form gas-tight container, make the structure of image display device.
About the bonding method of carrying out two parts, the manufacture method of vacuum envelope that adopts this method and the manufacturing method of anm image displaying apparatus of utilizing this method, known have a for example patent documentation 1.In this patent documentation 1, disclose Materials for Metal Packaging has been filled in the structure that encapsulates in the substrate.
In addition, in patent documentation 2, disclose indium and silicon adhesive have been configured in the structure that encapsulates on the frame in the lump.
The ideograph of the display floater that constitutes with the electron source base board that has disposed a plurality of such electronic emission elements has been shown among Figure 13.In addition, Figure 21 represents the simple cross-section structure of display floater (shell 90) periphery.
In Figure 13, Figure 21, the electron source base board of a plurality of electronic emission element (not shown)s has been disposed in 81 expressions, is also referred to as backplate.The 82nd, on the inner surface of glass substrate, formed the front plate of fluorescent film and metal backing etc.The 86th, carriage.
At first, to utilize frit 202 to carry out bonding in advance for backplate 81 and carriage 86.
Secondly, as panel adhesives welding In film 93, be arranged on carriage 86 and the front plate 82.At this moment, in order to improve the tight contact of 93 pairs of carriages 86 of In film and front plate 82, silver paste film 204 is set as basalis.
After this, in vacuum chamber, under the temperature more than the fusing point of In, carriage 86 and front plate 82 are bonded together, encapsulate, constitute shell 90 by In film 93.
[patent documentation 1]
The spy opens the 2002-184313 communique
[patent documentation 2]
The spy opens the 2002-182585 communique
Summary of the invention
One object of the present invention is to provide a kind of bonding new adhering method that can realize that reliability is high.
Another object of the present invention is to provide a kind of manufacture method that has high reliability, can keep the gas-tight container of airtight conditions, and shows the good manufacturing method of anm image displaying apparatus of grade.
A first aspect of the present invention is a kind of manufacture method of gas-tight container, it is characterized in that:
Operation with bonding first member and second member,
This bonding process has:
On above-mentioned first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
On above-mentioned second member, form the operation of the contact member different with above-mentioned adhesives; And
The operation that above-mentioned adhesives is contacted with above-mentioned contact member;
Above-mentioned substrate is above-mentioned adhesives to the wettability of this substrate than the wettability good substrate of above-mentioned adhesives to the face before the above-mentioned substrate of the formation of above-mentioned first member,
Above-mentioned contact member be the cementability of this contact member and above-mentioned adhesives than forming the face before the above-mentioned contact member and the good contact member of cementability of above-mentioned adhesives,
After above-mentioned second member carried out the predetermined process operation, form the operation of above-mentioned contact member.
As above-mentioned treatment process, can enumerate film formation process for example and be exposed to operation in the atmosphere of regulation etc.After having carried out the treatment process of afore mentioned rules, when above-mentioned adhesives position contacting is bonding, be under the situation of unsuitable state, after this predetermined process operation, form the operation of above-mentioned contact member, can realize good bonding.
A second aspect of the present invention is in a first aspect of the present invention, and above-mentioned bonding operation is that first member and second member are bonded together, and forms the operation of the bonding wire of the closure of stipulating airtight space,
Form the operation of above-mentioned contact member, the total length that constitutes the position of the bonding wire that makes the contact member edge that comprises the contact member that utilizes this operation setting at least should become above-mentioned closure is the operation that contacts the state that exists with above-mentioned adhesives,
The cementability that contact contact member that exists and above-mentioned adhesives along the total length of position of the bonding wire that should become above-mentioned closure with above-mentioned adhesives is better than forming the above-mentioned contact member face and the cementability of above-mentioned adhesives before.
A third aspect of the present invention is a kind of manufacture method of gas-tight container, it is characterized in that:
Have bonding first member and second member, form the operation of the bonding wire of the closure of stipulating airtight space,
The operation that forms this bonding wire has:
On above-mentioned first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
The operation that is the state that has the contact member different along the total length of the position of the bonding wire that should become above-mentioned closure on above-mentioned second member with above-mentioned adhesives; And
The operation that above-mentioned adhesives is contacted with above-mentioned contact member;
Above-mentioned substrate is above-mentioned adhesives to the wettability of this substrate than above-mentioned adhesives to forming the good substrate of wettability of the face before the above-mentioned substrate on above-mentioned first member,
Above-mentioned contact member be with the cementability of above-mentioned adhesives than having the face before the above-mentioned contact member and the good contact member of cementability of above-mentioned adhesives on above-mentioned second member.
A fourth aspect of the present invention is that above-mentioned adhesives is made of metal in the first aspect of the invention described above any one party face to the third aspect.Adhesives needn't all be a metal in addition.Also can use alloy as metal in addition.The preferably low-melting material of adhesives in addition.Specifically, suitable use fusing point is the adhesives below 200 ℃.Be particularly suitable for constituting with low-melting-point metal, specifically, preferably using fusing point is low-melting-point metal below 200 ℃.
A fifth aspect of the present invention is that above-mentioned substrate is made of metal in the first aspect of the invention described above any one party face to the fourth aspect.Particularly with face that above-mentioned adhesives contacts on metal is preferably arranged.
A sixth aspect of the present invention is in the fourth aspect of the invention described above, and above-mentioned substrate is made of the metal that the metal than above-mentioned adhesives is difficult to oxidation.
A seventh aspect of the present invention is that above-mentioned adhesives should have oxide with above-mentioned contact member position contacting in any one party face in aspect the first aspect to the six of the invention described above.
A eighth aspect of the present invention is that above-mentioned contact member should have oxide with above-mentioned adhesives position contacting in any one party face in aspect the first aspect to the seven of the invention described above.
A ninth aspect of the present invention is in the eight aspect of the invention described above, and above-mentioned oxide is by SiO
2Or PbO constitutes.
A tenth aspect of the present invention is in any one party face in aspect the first aspect to the nine of the invention described above, to carry out under the condition of oxidation on the surface at least at above-mentioned adhesives, carries out forming in above-mentioned substrate the operation of above-mentioned adhesives.For example, as the operation that forms above-mentioned adhesives, the operation that can adopt above-mentioned adhesives under the temperature of carrying out fusion at least partly, in above-mentioned substrate, to be configured.And/or can adopt the operation that forms above-mentioned adhesives after, carry out above-mentioned bonding operation finish before under the maximum temperature of process, above-mentioned adhesives carries out the structure of fusion at least partly.Under these circumstances, adhesives is easily by the oxidation of the institute of the oxygen in the environmental gas.Under the situation of such condition, the application's invention is effective especially.Above-mentioned in addition contact member is preferably in not fusion under the above-mentioned maximum temperature.
A eleventh aspect of the present invention is a kind of manufacturing method of anm image displaying apparatus, this image display device has the display element in gas-tight container and this gas-tight container, and this manufacturing method of anm image displaying apparatus is characterised in that: have the operation that any one party face in first aspect to the ten aspects of the invention described above utilized is made above-mentioned gas-tight container.
A twelveth aspect of the present invention is in the tenth one side of the invention described above, above-mentioned gas-tight container has first substrate, second substrate relative with this first substrate, surrounds the encirclement member of the airtight space between this first substrate and second substrate, and above-mentioned first member is above-mentioned encirclement member.
A thirteenth aspect of the present invention is in the tenth one side of the invention described above, above-mentioned gas-tight container has first substrate, second substrate relative with this first substrate, surrounds the encirclement member of the airtight space between this first substrate and second substrate, and above-mentioned first member is above-mentioned first substrate or second substrate.
A fourteenth aspect of the present invention is a kind of manufacturing method of anm image displaying apparatus, this image display device has the display element in gas-tight container and this gas-tight container, this manufacturing method of anm image displaying apparatus is characterised in that: the manufacture method with the first aspect of the invention described above utilized or second aspect is made the operation of above-mentioned gas-tight container, and the processing of afore mentioned rules is in the operation of at least a portion that forms above-mentioned display element on above-mentioned second member or forms the operation of at least a portion of signal being supplied with the wiring of above-mentioned display element on above-mentioned second member.Concerning this aspect of invention, use also can combine the specific important document of the 4th to the tenth aspect of the invention described above in addition.
A fifteenth aspect of the present invention is a kind of manufacturing method of anm image displaying apparatus, this image display device has the display element in gas-tight container and this gas-tight container, this manufacturing method of anm image displaying apparatus is characterised in that: the manufacture method with the first aspect of the invention described above utilized or second aspect is made the operation of above-mentioned gas-tight container, the processing of afore mentioned rules is the operation of at least a portion of the wiring that above-mentioned display element is supplied with signal in formation on above-mentioned second member, forms at least a portion of above-mentioned contact member at least a portion of this wiring.Concerning this aspect of invention, use also can combine the specific important document of the 4th to the tenth aspect of the invention described above in addition.
A sixteenth aspect of the present invention is a kind of manufacturing method of anm image displaying apparatus, this image display device has the display element in gas-tight container and this gas-tight container, this manufacturing method of anm image displaying apparatus is characterised in that: the manufacture method with the first aspect of the invention described above utilized or second aspect is made the operation of above-mentioned gas-tight container, and the processing of afore mentioned rules is the operation that forms electrode or fluorophor on above-mentioned second member.Concerning this aspect of invention, use also can combine the specific important document of the 4th to the tenth aspect of the invention described above in addition.In above-mentioned manufacturing method of anm image displaying apparatus, preferably can adopt the structure that also has the operation that forms above-mentioned display element in addition.Before can beginning in the operation of the manufacturing of carrying out gas-tight container, the operation of formation display element carries out, carry out after also can finishing in addition in the operation of the manufacturing of carrying out gas-tight container, have under the situation of a plurality of operations in the operation that forms display element in addition, the Xingqi part operation that also can begin in the operation of the manufacturing of carrying out gas-tight container to advance is carried out another part operation after the operation of the manufacturing of carrying out gas-tight container begins.
A seventeenth aspect of the present invention is a kind of adhering method that uses adhesives, it is characterized in that having:
On first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
On second member, form the operation of the contact member different with above-mentioned adhesives; And
Above-mentioned adhesives is contacted with above-mentioned contact member, carries out the bonding operation of above-mentioned first member and above-mentioned second member,
To be above-mentioned adhesives compare the good substrate of wettability that forms the face before the above-mentioned substrate on above-mentioned first member to the wettability of this substrate in above-mentioned substrate, and above-mentioned adhesives is better to the cementability that forms the face before the above-mentioned contact member on above-mentioned second member than above-mentioned adhesives to the cementability of above-mentioned contact member.
In addition in above-described each side of the present invention, preferably this contact member will the member identical with above-mentioned substrate be arranged on second member above-mentioned contact member, the good member of cementability with above-mentioned adhesives when bonding than replacing with the cementability of above-mentioned adhesives.
In above-described each side of the present invention, be preferably in the operation that above-mentioned adhesives is contacted with contact member in addition.
In addition in above-described each side of the present invention, the immobilising temperature of the preferably above-mentioned contact member of temperature when above-mentioned adhesives is contacted with above-mentioned contact member.Before particularly making above-mentioned adhesives and above-mentioned contact member contacting, especially after being configured in above-mentioned adhesives in the substrate, and before making above-mentioned adhesives and above-mentioned contact member contact, can obtain and make above-mentioned adhesives experience be the structure of the temperature of the high state of flowability, but in the case, when adhesives was contacted with contact member, the said temperature when making temperature than the high state of above-mentioned flowability was low, contacted under the mobile state having suppressed.In the each side of above-described invention,, can be fit to adopt the substrate that silver, gold, platinum is arranged or comprise at least a alloy in them in addition as above-mentioned substrate.
Description of drawings
Fig. 1 is the figure of one of simple cross-section structure example of the periphery of expression shell of the present invention.
Fig. 2 is the plane graph of a structure example of the electron source that uses in the pattern ground expression image display device of the present invention.
Fig. 3 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 4 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 5 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 6 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 7 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 8 is the figure that the manufacturing process of the electron source in the key diagram 2 uses.
Fig. 9 is the illustration that expression forms voltage.
Figure 10 is the figure that the device that the characteristic of mensuration electronic emission element of the present invention is used is represented on pattern ground.
Figure 11 is the element current of expression surface conductive type electronic emission element of the present invention and the graph of relation of emission current and element voltage.
Figure 12 is the illustration of expression activation voltage.
Figure 13 is the oblique view of a structure example of pattern ground expression image display device of the present invention.
Figure 14 is the figure of example of the fluorescent film of pattern ground expression image display device of the present invention.
Figure 15 is one of the drive circuit of an expression image display device of the present invention illustration.
Figure 16 is the figure of one of the formation method of explanation In film of the present invention (adhesives) routine usefulness.
Figure 17 is the simple structure chart of one of expression method for packing of the present invention example.
Figure 18 is one of the simple cross-section structure illustration of the periphery of expression shell of the present invention.
Figure 19 is the simple structure chart of one of expression method for packing of the present invention example.
Figure 20 is the ideograph of a structure example of presentation surface conduction type electronic emission element.
Figure 21 is one of the simple cross-section structure illustration of the periphery of the existing shell of expression.
Figure 22 is the simple structure chart of one of the existing method for packing of expression example.
Figure 23 is the end view of the periphery of one of shell of the present invention example.
Embodiment
Below the execution mode of foregoing invention is adopted in expression.
Here enumerate concrete example, the manufacturing method of anm image displaying apparatus of execution mode of manufacture method of the execution mode of the adhering method that has the application concurrently and the application's gas-tight container is described
Execution mode.
Here, particularly to realize to realize that the form with the state of good homogeneous formation adhesives is a target.By on a member, forming the substrate that improves wettability, can make to have good uniformity.As utilizing wettability to form the structure of adhesives, be fit to adopt under the state of adhesives contact substrate the structure of the state of at least a portion experience fusion of adhesives.Specifically, when being configured in adhesives in the substrate, under the state of adhesives fusion, dispose, the adhesives fusion just can be realized.Here, utilizing wettability to realize that under the situation of uniform adhesives, the existence of the known oxide that forms is a problem on the surface of adhesives.For example, when being configured in adhesives in the substrate, if adopt on one side heat dispose adhesives structure and/or in the medium structure that is configured in the atmosphere of aerobic that contains of atmosphere, the then surperficial easy oxidation of adhesives.Therefore cementability excellent contact member is positioned on another member that becomes adhering object, improves cementability.
Here the following difference of carrying out to confirm wettability of the present invention.That is, measure extension width when being coated in above-mentioned adhesives in the above-mentioned substrate of above-mentioned first member.Next is determined under the identical conditions extension width when above-mentioned adhesives being coated on (be provided with above-mentioned substrate before) first member that above-mentioned substrate is not set.Extension width with the adhesives that applies on first member that substrate is not set is removed the extension width that is coated in suprabasil adhesives, if remove the result bigger than 1, then can confirm adhesives to the wettability of substrate comparison that the wettability of face of first member of substrate is not set is good.
In addition can the above-mentioned adhesives of following affirmation better than above-mentioned adhesives to the cementability of face that above-mentioned contact member is not set on above-mentioned second member (form contact member before face) to the cementability of above-mentioned contact member.That is, adopt the manufacture method of adhering method of the present invention or gas-tight container, constitute first gas-tight container.Breather pipe is arranged in this gas-tight container.Make 10 these first gas-tight containers.Under condition identical when forming this gas-tight container, second member with above-mentioned contact member is not set forms second gas-tight container.Breather pipe is arranged in this second gas-tight container.Make 10 these second gas-tight containers.Helium is ejected in these gas-tight containers.Measure the amount that enters inner helium with the leakage detector on the breather pipe that is connected each gas-tight container then.As condition determination at this moment, be to detect 1 * 10 in any at least 5 in above-mentioned 20 gas-tight containers
-12Pam
3The condition of the helium amount that/s is above.Specifically, at first the direction of peeling off along adhesive portion is not afterburning, measures above-mentioned 20 gas-tight containers helium amount separately.At this moment, in above-mentioned 20 gas-tight containers, if detect 1 * 10
-12Pam
3The gas-tight container of the helium amount that/s is above is below 4, and then above-mentioned 20 gas-tight containers helium amount is separately measured in the direction reinforcing a little of peeling off along adhesive portion.Under this condition, detect 1 * 10
-12Pam
3The sum of the gas-tight container of the helium amount that/s is above is not 5 when above, and the direction of peeling off along adhesive portion increases power again, measures the helium amount of above-mentioned 20 gas-tight containers.In the moment in that a series of mensuration of the peeling force that has applied regulation initial a series of mensuration of peeling force (or do not apply) finish, detecting 1 * 10
-12Pam
3The number of the gas-tight container of the helium amount that/s is above is under the situation more than 5, will measure end.To not 1 * 10 in this helium amount that detects constantly
-12Pam
3The above gas-tight container of/s is as certified products, relatively this percentage of A-class goods.If the percentage of A-class goods of first gas-tight container is than the percentage of A-class goods height of second gas-tight container, just can confirm that above-mentioned adhesives is better to the cementability of face that above-mentioned contact member is not set on above-mentioned second member than above-mentioned adhesives to the cementability of above-mentioned contact member.
Following with reference to accompanying drawing, describe preferred implementation of the present invention for example in detail.But, scope of the present invention is not only limited the meaning in the size, material, shape, its relative configuration relation etc. of the constituent part of record in this embodiment.In addition, as following execution mode,, also can use electroluminescent cell or plasma generating device etc. in addition as display element though use electronic emission element as display element.
In the image display device of present embodiment,, use Figure 20 formation thing shown in the example of passing the imperial examinations at the provincial level as the electronic emission element that is configured in the electron source.
As glass material, can use cheap soda-lime glass.In addition, preferably use the substrate that on glass substrate, has formed silicon oxide film.Under the situation that soda-lime glass is used as substrate, can be with this silicon oxide film as the sodium barrier layer.This silicon oxide film is preferably formed as the thickness about 0.5 micron.In addition, also can form this silicon oxide film well with sputtering method.Glass that sodium is few or quartz base plate also can be used as the substrate of embodiments of the present invention in addition.
Material as element electrode 22,23, can use general conductor material, metal such as metal such as Ni, Cr, Au, Mo, Pt, Ti or Pd-Ag preferably for example, perhaps suitably select from transparent conductive bodies such as the printed conductor that is made of metal oxide and glass etc. or ITO etc., its thickness is preferably hundreds of dusts to several microns scope.
The shapes of element electrode interval L, element electrode length W, element electrode 22,23 etc. are according to the suitably designs such as application form of actual components, but at interval L preferably from thousands of dusts to 1mm, consider voltage that is added between the pixel electrode etc., be scope from 1 micron to 100 microns.In addition, element electrode length W preferably considers resistance value, the electron emission characteristic of electrode, and the peek micron is hundreds of microns scope extremely.
To form conductive film (element film) 27 across the form of element electrode 22,23 as electron source.
As conductive film 27, in order to obtain the good electron emission characteristics, the particulate film that constitutes with particulate is good especially.The thickness of this film considers that the step coverage, the described formation treatment conditions of resistance value between the element electrode and back etc. of element electrode 22,23 suitably set in addition, but is preferably several dusts to thousands of dusts, and it is not good to get 10 dust to 500 Ettas.This layer resistance value is preferably 10
3～10
7Ω/.
The conductive film material generally is fit to adopt palladium Pd, but is not limited thereto.Film build method also be fit to adopt the method fired behind sputtering method, the coating solution etc. in addition.
If vacuum degree is according to the rules switched between element electrode 22,23 by not shown power supply, then form the gap (be full of cracks) of structural change at the position of conductive film 27.This gap area forms electron emission part.In addition, under the voltage of regulation, from by near this formed gap of formation processing, cause the electronics emission, electronic transmitting efficiency is also very low under this state.
The example of the voltage waveform of energising formation has been shown among Fig. 9.It is good especially that voltage waveform is impulse waveform.This is to apply continuously peak value of pulse as the method shown in Fig. 9 A of the pulse of constant voltage and while increasing the method shown in Fig. 9 B that peak value of pulse applies pulse.
At first, illustrate the situation of peak value of pulse with Fig. 9 A as constant voltage.T1 among Fig. 9 A and T2 are the pulse duration and the pulse spacings of voltage waveform.Usually, setting T1 is that 1 microsecond to 10 millisecond, T2 are the scope of 10 microseconds to 100 millisecond.The crest value of triangular wave (crest voltage when energising forms) can suitably be selected according to the form of electronic emission element.According to such condition, for example extremely apply voltage between tens of minutes in the several seconds.Impulse waveform is not limited to triangular wave, also can adopt desirable waveforms such as square wave.
Secondly, while increase the situation that the impulse wave peak value applies potential pulse with Fig. 9 B explanation.T1 among Fig. 9 B and T2 can be identical with T1 and the T2 among Fig. 9 A.The peak value of triangular wave (crest voltage when energising forms) can be for example to increase about the 0.1V step one by one.
Energising form to be handled like this and is finished, and promptly measures and flows through the electric current that pulse voltage applies the element in the process, obtains resistance value, for example during the resistance more than showing 1M Ω, energising is formed finish.
Under the state after this forms processing, the electronics luminous efficiency is very low.Therefore in order to improve electronic transmitting efficiency, preferably said elements is called the processing of activation.
Under the state of the appropriate vacuum that has organic compounds, pulse voltage is added between the element electrode 22,23 repeatedly, can carry out this activation and handle.Import the gas comprise carbon atom then, make the carbon that comes from this or carbide make carbon film near being deposited on above-mentioned gap (be full of cracks).
One example of this operation now is described, for example uses three nitriles (trinitrile), import in the vacuum space, keep 1.3 * 10 by the slow valve of letting out as carbon source
-4About Pa.Because the member that uses in the shape of vacuum plant and the vacuum plant etc. have some influences, the pressure of three nitriles of importing is preferably 1 * 10
-5Pa～1 * 10
-2About Pa.
Figure 12 represents to activate the preference that the voltage that uses in the operation applies.The maximum voltage value that applies is suitably selected in the scope of 10～20V.
In Figure 12 A, T1 is the pulse duration of the positive and negative of voltage waveform, and T2 is the pulse spacing, and the positive and negative absolute value of setting voltage value equates.In addition, in Figure 12 B, T1 and T1 ' are respectively the pulse duration of the positive and negative of voltage waveform, and T2 is the pulse spacing, T1＞T1 ', and the positive and negative absolute value of setting voltage value equates.
At this moment,, stop energising, will delay vent shut valve, finish to activate and handle in the moment that emission current Ie roughly reaches capacity.
Utilize above operation can make electronic emission element shown in Figure 20.
With the fundamental characteristics of Figure 10, Figure 11 explanation according to the electronic emission element of above-mentioned component structure and manufacture method making.
Figure 10 is the evaluation of measuring schematic representation of apparatus that mensuration has the electron emission characteristic of the electronic emission element of above-mentioned structure to use.In Figure 10, the 51st, element voltage Vf is added in the power supply of using on the element, the 50th, measure the galvanometer that the element current If of the electrode part flow through element uses, the 54th, the anode that the emission current Ie that seizure is launched from the electron emission part of element uses, the 53rd, voltage is added in the high voltage source of using on the anode 54, the 52nd, the galvanometer that the emission current Ie that mensuration is launched from the electron emission part of element uses.
When mensuration flows through the element current If between the element electrode 22,23 of electronic emission element and flows to the emission current Ie of anode, power supply 51 and galvanometer 50 are connected on the element electrode 22,23, the anode 54 that connects power supply 53 and galvanometer 52 are configured in the top of this electronic emission element.
In addition, this electronic emission element and anode 54 are arranged in the vacuum plant 55, have necessary equipment in exhaust pump 56 and the vacuum gauge equal vacuum device in this vacuum plant, under desirable vacuum state, carry out the evaluation of measuring of this element.In addition, be that the distance H of 1kV～10kV, anode and electronic emission element is to measure in the scope of 2mm～8mm at the voltage of anode 54.
The typical case of the relation of the emission current Ie that measured by evaluation of measuring device shown in Figure 10 and element current And if element voltage Vf has been shown among Figure 11.In addition, the size of emission current Ie and element current If is significantly different, but in Figure 11 for the variation of If, Ie relatively is discussed qualitatively, the usefulness lineal scale is with the unit souvenir longitudinal axis arbitrarily.
This electronic emission element has three features at emission current Ie.
The first, as can be seen from Figure 11, if this element applies the above element voltage of certain voltage (being called threshold voltage, the Vth among Figure 11), then emission current Ie sharply increases, and below threshold voltage vt h, almost detects less than emission current Ie on the other hand.That is, conclude that expression is as the characteristic that has the non-linear element of the clear and definite threshold voltage vt h of emission current Ie.
The second, because emission current Ie is relevant with element voltage Vf, so can control emission current Ie with element voltage Vf.
The 3rd, relevant by the emission electric charge that anode 54 is caught with the time that applies element voltage Vf.Can utilize the time that applies element voltage Vf to control the quantity of electric charge of being caught by anode 54.
Secondly, the electron source and the image display device of present embodiment are described.
As the basic structure of the electron source of present embodiment, can enumerate structure for example shown in Figure 2.This electron source is forming many Y directions wirings (wiring down) 24 and forming many directions Xs wirings (going up wiring) 26 by insulating barrier 25 in this Y direction wiring 24 on the substrate 81, configuration comprises the electronic emission element of electrode pair (element electrode 22,23) respectively near the cross part of this both direction wiring.
The image display device of present embodiment adopts the illustrative electron source of Fig. 2 to constitute, and with Figure 13 its basic structure is described.
In Figure 13, the 81st, constitute the substrate of above-mentioned electron source, the 82nd, on the inner surface of glass substrate 83, formed the front plate of the substrate of fluorescent film 84 and metal backing 85 etc., the 86th, as the carriage that surrounds member.Utilize adhesives such as foregoing In film and frit etc., the substrate 81 of bonding formation electron source, carriage 86 and front plate 82 under 400～500 ℃ temperature, are fired more than 10 minutes, encapsulate, and constitute the shell 90 of gas-tight container.
In addition,, the not shown supporter that is called dividing plate is set,, also can constitutes the shell 90 that atmospheric pressure is had abundant intensity even under the situation of large tracts of land panel by between front plate 82 and electron source base board 81.
The manufacture method of the shell of present embodiment is: utilize frit etc. in advance carriage 86 to be bonded on electron source base board 81 or the front plate 82 a certain person among both, when predetermined gap formation shell 90 is set between electron source base board 81 and front plate 82, on the bonding plane of carriage 86, substrate is set, adhesives is arranged in this substrate.At this moment, as above-mentioned substrate, adopt above-mentioned adhesives the wettability comparison carriage 86 of this substrate not to be provided with the good substrate of wettability of the face of above-mentioned substrate.
As above-mentioned adhesives with metal for well, can be fit to adopt low-melting-point metal.The employing fusing point is that the adhesives below 200 ℃ is advisable.Using under the situation of metal as adhesives in addition, as the suitable alloy that adopts indium or comprise indium of this metal.
In addition, as above-mentioned substrate metal preferably, particularly be fit to adopt the metal that is not easy oxidation.Above-mentioned substrate is preferably different with the composition of above-mentioned adhesives.Particularly metal is being used under the situation of above-mentioned adhesives, is preferably using metal than the more difficult oxidation of above-mentioned adhesives as this substrate.The complexity of oxidation is stipulated with the size of standard oxidationreduction potential.As this substrate, be advisable with silver, gold, platinum or the alloy that comprises a certain person in them.
In addition, the contact member different with the composition of above-mentioned adhesives is arranged on upward relative with the above-mentioned adhesives position of another substrate (substrate of not bonding carriage 86).At this moment, above-mentioned adhesives is better to the cementability of face that above-mentioned contact member is not set on above-mentioned another substrate (substrate of not bonding carriage 86) than above-mentioned adhesives to the cementability of above-mentioned contact member.
As above-mentioned contact member oxidation film preferably, specifically, SiO preferably
2Or PbO.
In addition, above-mentioned substrate and above-mentioned contact member preferably its material or shape or material and shape neither with member.Though also can use the member identical as above-mentioned contact member, may not necessarily guarantee that the good and cementability of wettability makes the best of both worlds with above-mentioned substrate.Particularly having under the situation of oxide skin(coating) on the surface of adhesives, be difficult to take into account both.In addition, contact member forms the face (forming the preceding face of contact member) of contact member even oxide also can form oxidation film as contact member here.Be to constitute under the situation of substrate of above-mentioned electron source for example at the member that forms contact member, even constitute the substrate of this electron source oxide is arranged from the teeth outwards, treatment process by film forming of accompanying with the formation of the formation of later electronic emission element and wiring etc., sometimes on substrate, should produce pollution etc., perhaps answer position contacting to form wiring and wait member at this with the adhesives position contacting.Be to constitute under the situation of substrate of front plate at the member that forms contact member in addition, even constitute on the substrate surface of this front plate oxide arranged, by later formation fluorophor or as the processing of metal backing of accelerating field etc., sometimes on substrate, should produce pollution etc., perhaps answer position contacting to form members such as electrode or wiring at this with the adhesives position contacting.Therefore, after being preferably at least one treatment process that the member that makes reply before the operation that contact member contacts with adhesives form contact member carries out and finishing, form the operation of contact member.Particularly, be preferably on the member that forms contact member should with the formation operation end of the member of regulations such as wiring on the above-mentioned adhesives position contacting or electrode after form the operation of contact member.Particularly, after being preferably in whole treatment process that the member that makes reply before the operation that contact member contacts with adhesives form contact member carries out and finishing, form the operation of contact member.
In addition, along as the carriage that surrounds member,, form the adhesive portion that forms by substrate, adhesives and contact member as the bonding wire of closed wire.For example in structure shown in Figure 13, the wiring that forms on the surface of the substrate 81 that constitutes electron source is drawn out in the structure in the outside of bonding wire, if constitute the substrate 81 of electron source is the substrate that forms contact member, even then substrate 81 resembles the substrate that has oxide the substrate that has applied silicon oxide film from the teeth outwards, but owing on it, form wiring, so the part that forms wiring cementability deficiency sometimes.In the case, at least on the part that forms wiring, by in this wiring, forming contact member, along the total length and the cementability excellent contact member of adhesives of the position that should form bonding wire can contact with adhesives exist after, contact with adhesives and to get final product.Particularly preferably, after having passed through the operation that forms above-mentioned contact member, the total length of the position that should form bonding wire contacts with above-mentioned adhesives.In addition, substrate preferably also forms along the total length of the position that should form bonding wire.
In reduced atmosphere, carry out under the situation carry out above-mentioned bonding operation, be particularly suitable for adopting adhering method of the present invention, in the surperficial oxidized atmosphere of above-mentioned at least adhesives, carry out adhesives being arranged under the situation of above-mentioned suprabasil operation in addition, be particularly suitable for adopting adhering method of the present invention.
In addition, when being configured in above-mentioned adhesives in the substrate, under the situation of fusion configuration, be particularly suitable for adopting adhering method of the present invention.
In addition, with the described embodiment in back, the concrete structure example of the Vacuum Package portion of the image display device of detailed description present embodiment and effect etc.
Internal pressure (total pressure) is 10 during as the shell encapsulation of the gas-tight container of present embodiment
-5Below.For the vacuum degree after reaching this pressure and keeping shell 90 encapsulation, carried out the getter processing.
Above-mentioned getter has evaporation type and non-evaporation type, evaporation type getter is a kind of like this getter, promptly in shell 90, switch on or utilize high frequency to being that the alloy of main component heats with Ba etc., on container inner wall, form vapor-deposited film (getter flash of light), utilize the inner gas that takes place of getter metal covering absorption that activates, keep condition of high vacuum degree.
On the other hand, non-evaporation type getter is getter materials such as configuration Ti, Zr, V, Al, Fe, and heating in a vacuum by obtaining " the getter activation " of gas absorption characteristic, can be adsorbed emission gas.
In general, flat type image display device is because thin, thus can not fully guarantee to keep the setting area of evaporation type getter of vacuum or the flashed area that instantaneous discharge is used, and they are arranged near the carriage beyond the image display area.Therefore, the central portion that image shows and the electricity of getter setting area are led little, and the effective exhaust velocity of the central portion of electronic emission element and fluorophor diminishes.
In image display device with electron source and image display member, the image display area that the part of generation bad air is mainly shone by electron beam.Therefore, make fluorophor and electron source keep preferably non-evaporation type getter being configured near the fluorophor and electron source as the generation source of launching gas under the situation of high vacuum.
Illustrated among Figure 15 and utilized the structure example display floater that constitutes with the electron source of simple matrix configuration shown in Figure 2, show the image display device of usefulness based on the TV of the TV signal of NTSC mode.
In Figure 15, the 101st, image display panel shown in Figure 13 (shell), the 102nd, scanning circuit, the 103rd, control circuit, the 104th, shift register, the 105th, line storage, the 106th, sync separator circuit, the 107th, information signal generator, Va are direct voltage sources.
In image display device of the present invention as implied above, by two direction wirings voltage is added on each electronic emission element, carry out the electronics emission, by being connected the HV Terminal Hv on the direct voltage source Va, high pressure is added on the metal backing 85 as anode, the electron beam of generation is quickened, and impact fluroescence film 84 can display image.
At this moment, the manufacturing method of anm image displaying apparatus with present embodiment can suppress the generation of the vacuum leak of bonding portion extremely effectively, can long-term display quality excellent images.
Here the structure of said image display device is an example of image display device of the present invention, can carry out various distortion according to technological thought of the present invention.About input signal, though enumerated the NTSC mode, input signal is not limited thereto, and PAL, HDTV etc. are too.
Below, embodiments of the invention are described, but the present invention is not limited to these embodiment.
[embodiment 1]
Present embodiment is to make shown in Figure 2 to connect the electron source of a plurality of surface conductive type electronic emission elements with matrix wiring, with the example of this electron source manufacturing image display device shown in Figure 13.
At first, as electronic emission element, on the substrate 81 of electron source, made the electronic emission element of type shown in Figure 20.
Below, the manufacture method of the electron source of present embodiment is described with reference to Fig. 2 to Fig. 8.
(formation of element electrode)
On glass substrate 81, the employing sputtering method at first forms the titanium Ti (thickness is 5nm) as bottom, behind the formation platinum Pt (thickness is 40nm), applies photoresists on it, adopt exposure, development, these a series of photoetching processes of etching, formed element electrode 2,3 (with reference to Fig. 3).In addition, in the present embodiment, the interval L of element electrode is 10 microns, and relative length W is 100 microns.
(formation of Y direction wiring)
About the wiring material of wiring 24 of Y direction and directions X wiring 26, preferably the voltage of approximate equality can be supplied with the low resistance of a plurality of surface conductive type electronic emission elements, suitably set material, thickness, wiring width etc.
Carry out drying after adopting silk screen print method to print the agent of silver (Ag) slurry seal, fire, formed Y direction wiring 24 (with reference to Fig. 4) with the temperature about 420 ℃.Such Y direction wiring 24 be connected along a right electrode of each element electrode of Y direction arrangement, make the effect that has behind the panel as scan electrode.The thickness of this Y direction wiring 24 is about 15 microns, and width is about 100 microns.In addition, use the method same to form lead-out wiring to external drive circuit with it.
(formation of interlayer insulating film)
In order to make X and Y direction wiring insulation, form interlayer insulating film 25.For the cross part of Y direction wiring (scanning signal lines) 24 that cover back described directions X wiring and form earlier and can carry out directions X and connect up and be connected, on connecting portion, open and form contact hole (with reference to Fig. 5) corresponding to each element with the conductivity of other element electrodes.
Specifically, the photosensitive glass slurry is printed on all surfaces of substrate, uses the photomask of figure to expose then, then develop, fire with regulation with silk screen print method.In the present embodiment, the operation of printing-exposing for 4 times repeatedly-developing-firing has been carried out stacked.In addition, under the temperature about 480 ℃, fire.The thickness of this interlayer insulating film 25 is about 30 microns generally, and width is 150 microns.
(formation of directions X wiring)
Be connected on another right electrode of each element electrode of arranging along directions X as the directions X of public wiring wiring 26, be threadlike graph and form, so as to connect they (with reference to Fig. 6).Use the agent of silver (Ag) photosensitive paste seal in the material, carried out carrying out drying after the silk screen printing, after the photomask of the figure of use regulation exposes, develop.After this under the temperature about 480 ℃, fire, formed wiring.In addition, the thickness of directions X wiring 26 is about 10 microns, and width is about 50 microns.
Formed substrate like this with XY matrix wiring.
(formation of conductive film)
Secondly, after aforesaid substrate cleaned fully, in containing the solution of waterproofing agent, carry out surface treatment, so that make the surface have hydrophobicity.This be conductive film for coating after this form the aqueous solution of usefulness can be on element electrode expanded configuration moderately.
After this, between element electrode 22,23, formed conductive film 27.With the ideograph among Fig. 8 this operation is described.In addition, discrete for the flatness that compensates each element electrode on the substrate 81, the configuration drift condition of several Local observations figures on substrate, position offset between the observation station is similar to straight line, carrying out position compensation finishes, by the coating electrically conductive film formation material, whole locations of pixels skews ground does not take place be coated in reliably on the corresponding position.
In the present embodiment, be purpose with the palladium film that obtains as conductive film, at first by water 85: dissolve palladium-proline complex compound 0.15 weight % in the aqueous solution that isopropyl alcohol (IPA) 15 constitutes, obtained to contain the solution of organic palladium.Some other additives have been added.As drop feedway 71, use the ink discharge device that utilizes piezoelectric element, will put the footpath and be adjusted into 60 microns, with between the drop feed element electrode of this solution (Fig. 8 A).
After this, in air,, formed the conductive film 27 ' (with reference to Fig. 8 B) that constitutes by palladium oxide (PdO) to 350 ℃ of processing of firing of heating 10 minutes of this substrate.Obtain the some footpath and be about the film that 60 microns, thickness are 10nm to the maximum.
(formation operation)
Secondly, in being called the operation of formation,, produce be full of cracks in inside, formation electron emission part 28 (Fig. 8 (c)) to processings of switching on of above-mentioned conductive film 27 '.
Concrete method is, lead-out wiring portion around the residual aforesaid substrate 81, cover hood-like lid in the overall mode of covered substrate, and substrate 81 between inside make the vacuum space, by the portion of terminal of external power source voltage is added between the two directions wiring 24,26 from this lead-out wiring, make between the element electrode 22,23 energising, make conductive film 27 ' destroy partly, be out of shape or rotten, form the electron emission part 28 that is high resistance state on electric.
If energising heating in containing the vacuum atmosphere of some hydrogen at this moment then utilizes hydrogen to promote reduction, the conductive film 27 ' that is made of palladium oxide PdO is become the conductive film 27 that constitutes by palladium Pd.
Because reduction is contracted in the local be full of cracks (gap) that produces, this be full of cracks occurrence positions and shape had a significant impact the uniformity of original film when this variation took place.Discrete for the characteristic that suppresses majority element, the central portion that is preferably in conductive film 27 causes above-mentioned be full of cracks, and linearly as far as possible.
In addition, near the be full of cracks that forms by this formation processing, under assigned voltage, also cause the electronics emission, but luminous efficiency is also very low under present condition.
In the present embodiment, form the impulse waveform shown in use Fig. 9 B in handling, T1 is 0.1 millisecond, and T2 is 50 milliseconds.The voltage that applies increases about 0.1V every 5 seconds from 0.1V.Energising forms processing end like this: measure the electric current that flows through element when applying pulse voltage, obtain resistance value, in the moment that presents the resistance more than 1000 times with respect to the resistance before forming processing, make to form the processing end.
(activation operation)
Handle similarly to cover hood-like lid with above-mentioned formation, and substrate 81 between inside make the vacuum space,, by two directions wiring 24,26 pulse voltage is added between the element electrode 22,23 repeatedly from the outside, activate operation.Import the gas comprise carbon atom then, thus obtained carbon or carbide are deposited near the above-mentioned be full of cracks as carbon film.
In the present embodiment, use three nitriles, import in the vacuum space, keep 1.3 * 10 by the slow valve of letting out as carbon source
-4Pa.
Figure 12 is illustrated in and activates the preference that the voltage that adopts in the operation applies.In the scope of 10～20V, suitably select the maximum voltage value apply.
Stop energising in the moment that emission current Ie roughly reaches capacity after about 60 minutes, close the slow valve of letting out, finish to activate and handle.
In above operation, on substrate, can make the electron source that connects a plurality of electronic emission elements formations with matrix wiring.
Secondly, made image display device with above-mentioned electron source.With Fig. 1, Figure 13 and Figure 14 its manufacture method is described.
Fig. 1 is the figure of simple cross-section structure of periphery of shell 90 of the image display device of expression present embodiment.
In Fig. 1, the 81st, disposed the substrate of the electron source of a plurality of electronic emission elements, be called backplate.The 82nd, on the inner surface of glass substrate, formed the front plate of fluorescent film and metal backing.
Figure 14 is arranged on the key diagram of the fluorescent film 84 on the front plate 82.Under the situation of black and white image, 84 of fluorescent films are made of fluorophor, under the situation of color fluorescence film, by the arrangement of fluorophor, constitute fluorescent film 84 by the black conductive body 91 and the fluorophor 92 that are called black streaking or black matrix etc.The purpose that black streaking, black matrix are set is: the color boundary section blackening when making colored the demonstration between each fluorophor 92 of needed three primary colors fluorophor and so on, thus make colour mixture etc. unshowy; And the ambient light that suppresses on the fluorescent film 84 reflects the decrease of contrast that causes.
In addition, the inner surface side at fluorescent film 84 is provided with metal backing 85 usually.The purpose of metal backing is: by direct reflection, will reflex to front plate 82 1 sides towards the light of inner face one side in the light that fluorophor is sent out, and improve brightness; And have as the effect that applies the anode that beam voltage uses etc.After having made fluorescent film, carry out the surface smoothing processing (being commonly referred to film forming) of the inner surface side of fluorescent film,, can make metal backing after this by deposit Al such as vacuum evaporations.
In the present embodiment, front plate 82 is the material of the few PD-200 of alkali composition (Japan AGC (strain) system) with backplate 81 using plasma demonstration similarly with electric glass.
Be arranged between front plate 82 and the backplate 81 by the support that will be called dividing plate 205 (with reference to Fig. 1), even can constitute the shell 90 that under the situation of large tracts of land panel, also can have sufficient intensity atmospheric pressure.
Utilize frit 202 that carriage 86 is bonded on the backplate 81, under 400～500 ℃ temperature, fire more than 10 minutes, fix.In addition, by In film 93 as adhesives, bonding carriage 86 and front plate 82.
It is higher slightly to utilize frit 202 to be bonded in the height of the carriage 86 on the backplate 81 by the aspect ratio that makes dividing plate 205, sets separately height and shape, determines the thickness of the In film 93 after bonding.Thus, dividing plate 205 has the function as the thickness regulation member of In film 93.
Even the gas that In film 93 is at high temperature launched is also few,, use metal In owing to have low melting point.Under the situation that metal or alloy is used as adhesive member, do not need to comprise solvent and adhesive.As material usefulness, can make the gas of emitting considerably less the material that do not comprise solvent and adhesive.
Contact member 203 is arranged on the front plate 82 that is equivalent to second member.In the present embodiment, use conduct with SiO
2SiO for the film of main component
2Film.By silk screen printing with SiO
2Insulation printing slurry for main component is provided with SiO
2Contact member 203.As the formation method of contact member 203, can also adopt the method for whirl coating or infusion process formation sol gel solution in addition, or spatter film forming equal vacuum vapour deposition method.
At first, in order further to improve the wettability of the In of fusion, make carriage 86 keep hot state with sufficient temperature to substrate.Just enough more than 100 ℃.The basalis 204 that is formed by silver paste is the porous membranes that contain many pores with the big inside of the tight contact of glass.Therefore, should make the In of fusion be impregnated into basalis 204 inside fully in the present embodiment, utilize ultrasonic bonding flatiron 205 to be welded on the basalis 204, form In film 93.The liquid In of fusion is sufficient under the temperature more than 200 ℃.Metal In is supplied to usually to the Welding iron front end, utilizes not shown device for supplying, adds to bonding location at any time.In addition, the thickness of In film 93 with bonding after the thickness of In film 93 compare abundantly, regulate the translational speed of ultrasonic bonding flatiron 205 and the quantity delivered of In.In the present embodiment, for the thickness that makes the In film 93 after the encapsulation is about 300 microns, on carriage 86, form with about 500 microns thickness.In addition, in atmospheric pressure atmosphere, carry out the configuration of suprabasil In as adhesives.
Adopt formation method shown in Figure 16, after forming In film 93 on the carriage 86, adopt the bonding panel of method for packing shown in Figure 17.This operation is carried out in vacuum chamber later.Between with relative front plate 82 and backplate 81, be set under the state at certain interval, keep two substrates to carry out heating in vacuum.Carry out the vacuum(-)baking of substrate with the high temperature more than 300 ℃, so that from substrate emission gas, when after this returning room temperature, panel inside reaches sufficient vacuum degree.At this constantly, In film 93 is molten condition, is mobile high state.Find the level of backplate 81 fully, so that the unlikely outflow of the In of fusion.Behind the vacuum(-)baking, temperature is dropped near the fusing point of In, utilize positioner 200, make the interval of front plate 82 and backplate 81 dwindle at leisure, contact, carry out bonding, the i.e. encapsulation of two substrates.Temperature is dropped near the fusing point, is the flowability for the liquid In that suppresses to be molten condition, prevents from unwantedly when bonding to flow and overflow.
In the formation method of the In film 93 that illustrates with Figure 16, form surface film oxide.In the present embodiment, use basalis 204 for the thickness distribution that reduces In film 93.Adopted the structure that does not form the In film in front plate 82 1 sides in addition.In addition on the substrate of front plate 82 1 sides, the oxide-film that adopts silk screen print method to be pre-formed to exist on the surface with adhesives is bonding SiO easily
2Film (contact member 203) is so that In film (the In film that oxide layer is arranged on the surface) is bonding easily.
Make display floater shown in Figure 13 like this, connect the drive circuit that constitutes by scanning circuit, control circuit, modulation circuit, direct voltage source etc., made plane image display device.
If the fundamental characteristics of the surface conductive type electronic emission element of making as electron source in the employing present embodiment, then can be according at peak value that is added in the pulse-like voltage between the relative element electrode more than the threshold voltage and width, control is from the emitting electrons of electron emission part, can also therefore can show semi-tone according to its median Control current amount.
In addition, under the situation that has disposed a plurality of surface conductive type electronic emission elements, selection wire signal according to each row, row is selected in decision, if above-mentioned pulse-like voltage suitably is added on each element by each information signal line, then voltage suitably can be added in arbitrarily on the element, can be with each element conductive.
In the image display device of present embodiment, by directions X terminal and Y direction terminal, the mode of cutting apart with the time is added in assigned voltage on each electronic emission element, by HV Terminal Hv high pressure is added on the metal backing 85, can shows matrix image figure arbitrarily with the preferable image quality that does not have picture element flaw.
[embodiment 2]
Among Figure 18 and Figure 19 an alternative embodiment of the invention has been shown.Figure 18 represents the simple cross-section structure of the adhesive portion of shell periphery, and Figure 19 represents the schematic diagram when bonding.
In the present embodiment, also be to utilize the In film to carry out the bonding of carriage 86 and backplate 81.That is, carriage is equivalent to first member, and front plate and backplate are equivalent to second member.Form on the plate 81 overleaf voltage is added in the wiring of using on the element.Contact member 203b is to be the PbO film of main component with PbO.This contact member is the member of the cementability of raising and adhesives, and while double as insulating barrier is so that as the In film of adhesives and the not conducting of connecting up.Identical with embodiment 1 in addition.In backplate as second member, the PbO of double as interlayer insulating film and contact member is arranged in the wiring, represent that the figure of such state is Figure 23.Figure 23 sees the figure that Figure 18 sees from the left side.Contact member 203b covers many wirings, and contact member 203b double as makes the layer owing to the concavo-convex smooth usefulness that exists many wirings to occur.Identical with embodiment 1, along whole peripheries of shell contact member is set, realize bonding along whole peripheries of shell.
In the present embodiment, even use with SiO as the contact member 203a of front plate one side
2Be the film of main component, use the film as main component with PbO as the contact member 203b of backplate one side, carrying out suitably, combined transformation also is effective.Though adopted in addition form substrate on the carriage, in front plate and/or form the structure of contact member overleaf on the plate, also can be and/or form the substrate that is used for forming adhesives on the plate overleaf in front plate, on carriage, form contact member.
In addition, in the above embodiments 1,2, though in vacuum environment, carry out packaging process, but also can in atmospheric environment, encapsulate, discharge the panel gas inside from the exhaust of other setting with substrate aperture then, be formed with the shell 90 of vacuum gap, even under these circumstances, the present invention is also effective.
If adopt the execution mode of above explanation, then can make the shell that to keep high vacuum at low cost.In addition, if make electronic emission element and, then can form the image display device that high vacuum, electron emission capability are good, show the grade excellence with its display unit of using as electron source.
If adopt the application's invention, then can realize high bonding of reliability, can the high gas-tight container of fabrication reliability, the image display device that can also make.
Claims (17)
1. the manufacture method of a gas-tight container is characterized in that:
Operation with bonding first member and second member,
This bonding operation has:
On above-mentioned first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
On above-mentioned second member, form the operation of the contact member different with above-mentioned adhesives; And
The operation that above-mentioned adhesives is contacted with above-mentioned contact member;
Above-mentioned substrate is above-mentioned adhesives to the wettability of this substrate than the wettability good substrate of above-mentioned adhesives to the face before the above-mentioned substrate of the formation of above-mentioned first member,
Above-mentioned contact member be the cementability of this contact member and above-mentioned adhesives than forming the face before the above-mentioned contact member and the good contact member of cementability of above-mentioned adhesives,
After above-mentioned second member carried out the predetermined process operation, form the operation of above-mentioned contact member.
2. the manufacture method of gas-tight container according to claim 1, it is characterized in that: above-mentioned bonding operation is that first member and second member are bonded together, and forms the operation of bonding wire of the closure of regulation airtight space,
Form the operation of above-mentioned contact member, the total length that constitutes the position of the bonding wire that makes the contact member edge that comprises the contact member that utilizes this operation setting at least should become above-mentioned closure is the operation that contacts the state that exists with above-mentioned adhesives,
The cementability that contact contact member that exists and above-mentioned adhesives along the total length of position of the bonding wire that should become above-mentioned closure with above-mentioned adhesives is better than forming the above-mentioned contact member face and the cementability of above-mentioned adhesives before.
3. the manufacture method of a gas-tight container is characterized in that:
Have bonding first member and second member, form the operation of the bonding wire of the closure of stipulating airtight space,
The operation that forms this bonding wire has:
On above-mentioned first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
Operation along the total length setting of the position of the bonding wire that should become above-mentioned closure on above-mentioned second member contact member different with above-mentioned adhesives; And
The operation that above-mentioned adhesives is contacted with above-mentioned contact member;
Above-mentioned substrate is above-mentioned adhesives to the wettability of this substrate than the wettability good substrate of above-mentioned adhesives to the face before the above-mentioned substrate of the formation of above-mentioned first member,
Above-mentioned contact member be with the cementability of above-mentioned adhesives than the face before the above-mentioned contact member of being provided with of above-mentioned second member and the good contact member of cementability of above-mentioned adhesives.
4. according to the manufacture method of any described gas-tight container in the claim 1 to 3, it is characterized in that: above-mentioned adhesives is made of metal.
5. according to the manufacture method of any described gas-tight container in the claim 1 to 3, it is characterized in that: above-mentioned substrate is made of metal.
6. the manufacture method of gas-tight container according to claim 4, it is characterized in that: above-mentioned substrate is made of the metal that the metal than above-mentioned adhesives is difficult to oxidation.
7. according to the manufacture method of any described gas-tight container in the claim 1 to 3, it is characterized in that: above-mentioned adhesives should have oxide with above-mentioned contact member position contacting.
8. according to the manufacture method of any described gas-tight container in the claim 1 to 3, it is characterized in that: above-mentioned contact member should have oxide with above-mentioned adhesives position contacting.
9. the manufacture method of gas-tight container according to claim 8, it is characterized in that: above-mentioned oxide is by SiO
2Or PbO constitutes.
10. according to the manufacture method of any described gas-tight container in the claim 1 to 3, it is characterized in that: carry out under the condition of oxidation on the surface at least at above-mentioned adhesives, carries out forming in above-mentioned substrate the operation of above-mentioned adhesives.
11. manufacturing method of anm image displaying apparatus, this image display device has the display element in gas-tight container and this gas-tight container, it is characterized in that: have the operation that any described manufacture method of utilizing in the claim 1 to 3 is made above-mentioned gas-tight container.
12. manufacturing method of anm image displaying apparatus according to claim 11, it is characterized in that: above-mentioned gas-tight container has first substrate, and opposed second substrate of this first substrate, surrounds the encirclement member of the airtight space between this first substrate and second substrate, and above-mentioned first member is above-mentioned encirclement member.
13. manufacturing method of anm image displaying apparatus according to claim 11, it is characterized in that: above-mentioned gas-tight container has first substrate, and opposed second substrate of this first substrate, surrounds the encirclement member of the airtight space between this first substrate and second substrate, and above-mentioned first member is above-mentioned first substrate or second substrate.
14. a manufacturing method of anm image displaying apparatus, this image display device have the display element in gas-tight container and this gas-tight container, it is characterized in that: have the operation that claim utilized 1 or 2 described manufacture methods are made above-mentioned gas-tight container,
Wherein, the processing of afore mentioned rules is to form the operation of at least a portion of signal being supplied with the wiring of above-mentioned display element in the operation of at least a portion that forms above-mentioned display element on above-mentioned second member or on above-mentioned second member.
15. a manufacturing method of anm image displaying apparatus, this image display device have the display element in gas-tight container and this gas-tight container, it is characterized in that: have the operation that claim utilized 1 or 2 described manufacture methods are made above-mentioned gas-tight container,
Wherein, the processing of afore mentioned rules is the operation of at least a portion of the wiring that above-mentioned display element is supplied with signal in formation on above-mentioned second member, and forms at least a portion of above-mentioned contact member at least a portion of this wiring.
16. a manufacturing method of anm image displaying apparatus, this image display device have the display element in gas-tight container and this gas-tight container, it is characterized in that: have the operation that claim utilized 1 or 2 described manufacture methods are made above-mentioned gas-tight container,
Wherein, the processing of afore mentioned rules is the operation that forms electrode or fluorophor on above-mentioned second member.
17. an adhering method that uses adhesives is characterized in that comprising:
On first member, form the operation of substrate;
In this substrate, form the operation of adhesives;
On second member, form the operation of the contact member different with above-mentioned adhesives; And
Above-mentioned adhesives is contacted with above-mentioned contact member, carries out the bonding operation of above-mentioned first member and above-mentioned second member,
Wherein, to be above-mentioned adhesives compare the good substrate of wettability of the face before the above-mentioned substrate of formation of above-mentioned first member to the wettability of this substrate in above-mentioned substrate,
Above-mentioned adhesives is better to the cementability of the face before the above-mentioned contact member of the formation of above-mentioned second member than above-mentioned adhesives to the cementability of above-mentioned contact member.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP305320/2002 | 2002-10-21 | ||
| JP2002305320 | 2002-10-21 | ||
| JP338984/2003 | 2003-09-30 |
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| CN1497641A true CN1497641A (en) | 2004-05-19 |
| CN100405520C CN100405520C (en) | 2008-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101024984A Expired - Fee Related CN100405520C (en) | 2002-10-21 | 2003-10-21 | Manufacturing method of gas-tight container, manufacturing method of image display device and binding method |
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| CN (1) | CN100405520C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531488A (en) * | 2012-07-06 | 2014-01-22 | 佳能株式会社 | Semiconductor device, method of manufacturing the same, and camera |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992184A (en) * | 1995-09-28 | 1997-04-04 | Ise Electronics Corp | Fluorescent display tube and manufacture thereof |
| JP3599588B2 (en) * | 1999-02-26 | 2004-12-08 | キヤノン株式会社 | Image forming device |
| KR100491913B1 (en) * | 1999-03-31 | 2005-05-27 | 가부시끼가이샤 도시바 | Method for manufacturing flat image display and flat image display |
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2003
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531488A (en) * | 2012-07-06 | 2014-01-22 | 佳能株式会社 | Semiconductor device, method of manufacturing the same, and camera |
| US9209330B2 (en) | 2012-07-06 | 2015-12-08 | Canon Kabushiki Kaisha | Semiconductor device, method of manufacturing the same, and camera |
| CN103531488B (en) * | 2012-07-06 | 2016-05-18 | 佳能株式会社 | Method and the camera of semiconductor equipment, manufacture semiconductor equipment |
Also Published As
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| CN100405520C (en) | 2008-07-23 |
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