CN1482654A - Ono interpoly dielectric for flash memory cells and method for fabricating the same - Google Patents

Ono interpoly dielectric for flash memory cells and method for fabricating the same Download PDF

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Publication number
CN1482654A
CN1482654A CNA02155532XA CN02155532A CN1482654A CN 1482654 A CN1482654 A CN 1482654A CN A02155532X A CNA02155532X A CN A02155532XA CN 02155532 A CN02155532 A CN 02155532A CN 1482654 A CN1482654 A CN 1482654A
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nitride layer
layer
coating
substrate
silicon oxide
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CN100364066C (en
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Л
谢荣裕
韩宗廷
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Macronix International Co Ltd
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Macronix International Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)

Abstract

A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed over the nitride layer. The low temperature process can form a nitride layer for an oxide-nitride-oxide (ONO) dielectric structure at about a temperature of 700 DEG C. By such a process, an ONO dielectric structure can be formed using a low temperature deposition process, which can reduce the thickness of the ONO dielectric structure.

Description

The interior compound crystal dielectric medium of ONO and the manufacture method that are used for the brilliant unit of flash
Technical field
The invention relates to a kind of semiconductor element with and preparation method thereof, and particularly relevant for compound crystal (interpoly) dielectric medium in a kind of ONO that is used for the brilliant unit of flash and the method for using a single-wafer low temperature depositing manufacture craft to make this dielectric medium.
Background technology
It is flash element that semiconductor element has a kind of kenel, comprise that a floating gate electrode can store charge, electric charge can be provided by a channel region of floating gate electrode below, this floating boom generally comprises the dielectric material that one deck can store charge, and the dielectric medium structure that generally is used as floating boom is the structure of a kind of oxide-nitride thing-oxide (ONO).
The structure of this class has been played the part of very important role to the operating characteristic and the reliability of flash memory, and a high-quality ONO dielectric medium structure should provide grow the average time before for example fabricating low-defect-density, the inefficacy and high electric charge is kept ability.
A kind of method of the ONO of making dielectric medium is to use the hot manufacture craft of a kind of single-wafer, known method need deposit this dielectric film with the high temperature that is about 800 degree Celsius, because very high this manufacture craft of temperature has some shortcomings, can cause time (TDDB) weak point of dielectric material surface out-of-flatness, dielectric medium collapse and low acceptance rate etc. such as the high temperature manufacture craft.
Therefore, what need now is that manufacture craft with low temperature deposits the ONO dielectric material, and the out-of-flatness of minimizing ONO dielectric material surface.
Summary of the invention
In view of this, the invention provides a kind of manufacture method of semiconductor element, comprise a wafer substrate is provided, on wafer substrate, form one deck first silicon oxide layer; Utilize the low temperature depositing manufacture craft on first silicon oxide layer, to deposit one deck nitride layer; And on nitride layer, form one deck second silicon oxide layer.On the one hand, first silicon oxide layer is formed on the floating boom compound crystal (poly).
Other purpose of the present invention and advantage will below do further detailed narration, be familiar with this operator and also can reach purpose of the present invention easily through technology disclosed by the invention.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, elaborate.
Description of drawings
Fig. 1 and Fig. 2 illustrate the making flow chart into semiconductor element;
Fig. 3 figure is a chart that is presented at the uneven degree of ONO dielectric material under 800 degree Celsius and 700 degree;
Fig. 4 is the chart that is presented at the mortality of the ONO dielectric material accumulation under 800 degree Celsius and 700 degree;
Fig. 5 is the chart that is presented at the acceptance rate percentage of taking the photograph the ONO dielectric material under 800 degree and 700 degree.Label declaration
100 substrates, 120 tunnel layers
130 polysilicon layers (floating boom), 140 storehouse dielectric medium films
The 140-1 first oxide skin(coating) 140-2 nitride layer
140-3 second oxide skin(coating) 150 control gates
160 metal silicide layers, 170 clearance walls
180 cap rocks, 190 diffusion regions
Embodiment
Below will cooperate icon to describe the present invention in detail, and wherein in different figure, can use identical reference number also to represent identical or close element.
Fig. 1 and Fig. 2 illustrate the making flow chart into semiconductor element.Please refer to Fig. 1, provide a wafer substrate 100 in order to make active member, form one deck tunnel oxide 120 in substrate 100, form one deck polysilicon layer 130 on tunnel oxide 120, this polysilicon layer 130 can be used as a floating boom 130.
Then, on floating boom 130, form layer stack dielectric medium film or material 140, this dielectric medium film 140 comprises one deck first oxide skin(coating) 140-1, one deck nitride layer 140-2 and one deck second oxide skin(coating) 140-3, and this structure can be expressed as oxide-nitride thing-oxide (ONO) dielectric medium structure.In one embodiment, the first oxide skin(coating) 140-1 that is deposited on the floating boom 130 is with a kind of known Low Pressure Chemical Vapor Deposition (LPCVD), and under the pressure that is about 200 Torr, tranmittance is as allowing silane (SiH 4) and nitrogen oxide (N 2O) reaction is carried out.
Nitride layer 140-2 on the first oxide skin(coating) 140-1 forms with the low temperature depositing manufacture craft, wherein silane (SiH 4) and ammonia (NH 3) can be imported into as reacting gas.In one embodiment, the deposition manufacture craft of nitride layer 140-2 can be carried out under the temperature that is about 700 degree Celsius, and its pressure is about 275Torr.Then, with a known LPCVD manufacture craft, on nitride layer 140-2, form or deposition one deck second oxide skin(coating) 140-3.In one embodiment, the thickness of the first oxide skin(coating) 140-1 is about 43 dusts, and the thickness of nitride layer 140-2 is about 62 dusts, and the thickness of the second oxide skin(coating) 140-3 is about 59 dusts.
Please refer to Fig. 2, can form one deck control gate 150 with known semiconductor fabrication process, cover on the second oxide skin(coating) 140-3 of ONO dielectric medium film 140, on control gate 150, form layer of metal silicide layer 160, near the vertical sidewall of grid 150, can form clearance wall 170, form and on metal silicide layer 160, have one deck cap rock 180; Can in substrate 100, form diffusion region 190 at last, in order to as source electrode and drain region.
The result of low temperature depositing manufacture craft can make ONO film 140 have higher nucleation density in the early stage stage of growth of film, and compared to known high temperature deposition manufacture craft, therefore nitride layer 140-2 can present a more level and smooth surface.For instance, the surface that can significantly discover the silicon nitride layer that forms in the surface ratio that is about the silicon nitride layer that forms under Celsius 800 high temperature of spending under 700 degree Celsius is more uneven, shown in the chart of Fig. 3.
Please refer to Fig. 4, the obvious nitride layer of making according to said method has the time (TDDB) that higher dielectric medium collapses than the film of making of known high temperature deposition method; That is to say, can exceed three times than the nitride that under 800 degree Celsius, forms at its TDDB of nitride that forms under 700 degree Celsius.Fig. 5 is a chart, shows that the nitride layer made from said method has higher silicon acceptance rate than the nitride layer that forms with known high temperature deposition method.As shown in the figure, the temperature of nitride deposition manufacture craft is reduced to 700 degree Celsius and can promotes 13% to usefulness.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking claims person of defining.

Claims (14)

1, a kind of manufacture method of semiconductor element is characterized in that: comprising:
One wafer substrate is provided;
Form one first silicon oxide layer on this wafer substrate;
Form the mononitride layer on this first silicon oxide layer with the low temperature depositing manufacture craft;
Form one second silicon oxide layer on this nitride layer.
2, manufacture method as claimed in claim 1 is characterized in that: further comprise forming a floating boom compound crystal on this wafer substrate, and wherein this first silicon oxide layer is formed on this floating boom compound crystal.
3, manufacture method as claimed in claim 1 is characterized in that: the step that forms this nitride layer is included in this nitride layer of temperature deposit that is about 700 degree Celsius.
4, manufacture method as claimed in claim 1 is characterized in that: the step that forms this nitride layer is included in this nitride layer of pressure deposit that is about 275Torr.
5, manufacture method as claimed in claim 1 is characterized in that: the step that forms this first silicon oxide layer is included in and makes silane and nitrogen oxide reaction under the pressure that is about 200Torr.
6, manufacture method as claimed in claim 1 is characterized in that: the thickness of this first silicon oxide layer is about 43 dusts.
7, manufacture method as claimed in claim 1 is characterized in that: the thickness of this nitride layer is about 62 dusts.
8, manufacture method as claimed in claim 1 is characterized in that: the thickness of this second silicon oxide layer is about 59 dusts.
9, a kind of semiconductor element is characterized in that: comprising:
One substrate;
One first oxide skin(coating) is formed in this substrate;
The mononitride layer is formed on this first oxide skin(coating), and wherein this nitride layer forms with a low temperature depositing manufacture craft;
One second oxide skin(coating) is formed on this nitride layer.
10, semiconductor element as claimed in claim 9 is characterized in that: further comprise a floating boom compound crystal, be formed in the substrate, and wherein this first oxide skin(coating) is formed on this floating boom compound crystal.
11, semiconductor element as claimed in claim 9 is characterized in that: the formation temperature of this nitride layer is about 700 degree Celsius.
12, a kind of semiconductor element is characterized in that: comprising:
One substrate;
One floating gate electrode is formed in this substrate, and this floating gate electrode comprises:
One first oxide skin(coating) is formed in this substrate;
The mononitride layer is formed on this first oxide skin(coating), and wherein this nitride layer forms with a low temperature depositing manufacture craft;
One second oxide skin(coating) is formed on this nitride layer.
13, semiconductor element as claimed in claim 12 is characterized in that: this floating gate electrode further comprises a floating boom compound crystal, be formed in this substrate, and wherein this first oxide skin(coating) is formed on this floating boom compound crystal.
14, semiconductor element as claimed in claim 12 is characterized in that: this nitride layer forms under a temperature that is about 700 degree Celsius.
CNB02155532XA 2002-09-10 2002-12-05 Ono interpoly dielectric for flash memory cells and method for fabricating the same Expired - Lifetime CN100364066C (en)

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US10/237,668 US6777764B2 (en) 2002-09-10 2002-09-10 ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process
US10/237,668 2002-09-10

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452439C (en) * 2004-07-21 2009-01-14 海力士半导体有限公司 Transistor of semiconductor device and method of manufacturing the same
CN103594354A (en) * 2013-11-08 2014-02-19 溧阳市江大技术转移中心有限公司 Manufacturing method of dielectric layer
CN103606513A (en) * 2013-11-08 2014-02-26 溧阳市江大技术转移中心有限公司 Manufacturing method for semiconductor capacitor

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US7045847B2 (en) * 2003-08-11 2006-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with high-k gate dielectric
KR101432766B1 (en) * 2006-05-26 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8283224B2 (en) * 2008-12-23 2012-10-09 Texas Instruments Incorporated Ammonia pre-treatment in the fabrication of a memory cell
US8372714B2 (en) 2010-06-28 2013-02-12 Macronix International Co., Ltd. Semiconductor device and method of manufacturing a semiconductor device
KR101175148B1 (en) * 2010-10-14 2012-08-20 주식회사 유진테크 Method and apparatus for manufacturing memory device having 3 dimensional structure

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US5925908A (en) * 1997-07-30 1999-07-20 Motorola, Inc. Integrated circuit including a non-volatile memory device and a semiconductor device
US6051467A (en) * 1998-04-02 2000-04-18 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate a large planar area ONO interpoly dielectric in flash device
JP2000101038A (en) * 1998-09-17 2000-04-07 Sony Corp Manufacture of semiconductor device
US6339000B1 (en) * 1998-09-25 2002-01-15 Conexant Systems, Inc. Method for fabricating interpoly dielectrics in non-volatile stacked-gate memory structures
US6177363B1 (en) * 1998-09-29 2001-01-23 Lucent Technologies Inc. Method for forming a nitride layer suitable for use in advanced gate dielectric materials
US6163049A (en) 1998-10-13 2000-12-19 Advanced Micro Devices, Inc. Method of forming a composite interpoly gate dielectric
KR20010004263A (en) 1999-06-28 2001-01-15 김영환 Method of forming a gate in a stack gate flash EEPROM cell
US6248628B1 (en) * 1999-10-25 2001-06-19 Advanced Micro Devices Method of fabricating an ONO dielectric by nitridation for MNOS memory cells
US6180538B1 (en) * 1999-10-25 2001-01-30 Advanced Micro Devices, Inc. Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition
US6576548B1 (en) * 2002-02-22 2003-06-10 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device with reliable contacts/vias

Cited By (5)

* Cited by examiner, † Cited by third party
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CN100452439C (en) * 2004-07-21 2009-01-14 海力士半导体有限公司 Transistor of semiconductor device and method of manufacturing the same
US7564090B2 (en) 2004-07-21 2009-07-21 Hynix Semiconductor Inc. Transistor of a semiconductor device
CN103594354A (en) * 2013-11-08 2014-02-19 溧阳市江大技术转移中心有限公司 Manufacturing method of dielectric layer
CN103606513A (en) * 2013-11-08 2014-02-26 溧阳市江大技术转移中心有限公司 Manufacturing method for semiconductor capacitor
CN103606513B (en) * 2013-11-08 2016-02-17 溧阳市江大技术转移中心有限公司 A kind of manufacture method of semiconductor capacitor

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US6777764B2 (en) 2004-08-17
US20040046218A1 (en) 2004-03-11
TW200407974A (en) 2004-05-16

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