CN1481202A - Display device mixed electro luminescence with luminescence - Google Patents
Display device mixed electro luminescence with luminescence Download PDFInfo
- Publication number
- CN1481202A CN1481202A CNA031467768A CN03146776A CN1481202A CN 1481202 A CN1481202 A CN 1481202A CN A031467768 A CNA031467768 A CN A031467768A CN 03146776 A CN03146776 A CN 03146776A CN 1481202 A CN1481202 A CN 1481202A
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- China
- Prior art keywords
- layer
- display device
- bar shaped
- photic
- light
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- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Display device includes substrate layer, bar shaped electrode photoetched, dielectric layer, electro photoluminescence layer, dielectric layer, bar shaped ITO electrode photoetched, transparent glass. Luminescent material ZnF2:GdF3 capable of generating blue ultraviolet light is selected as the material of electro photoluminescence layer between two dielectric layers. Photoluminescence is aligned and glued to ITO electrode with their bar shaped density and relative position total overlapped. Under power source driving in different frequencies, the electro photoluminescence material is capable of emitting strong ultraviolet light to excite photoluminescence so as to realize tabulate display with monocolor and multicolor shown. Two times of emissive power is enhanced in the invention.
Description
One, technical field
The present invention relates to a kind of flat-panel monitor.
Two, background technology
The main difficulty of current thin film electroluminescent device (TFELD) is to realize panchromaticization.In three primary colors, red and green all can meet the demands, and the brightness of blue light is then not enough.For this reason, the various countries researcher has launched many-sided research work round the brightness and the colorimetric purity that improve blue TFELD.
Generally concentrate on and select matrix and impurity and improve on the crystalline state of blue light material about the work of the brightness of blue membrane electroluminescent device, should make the energy gap increase of material make device send blue light, avoiding collecting in the sandwich just again, electronics source, electronics acceleration and these three processes of collision excitation luminescence center make the bottleneck process of thin film electroluminescence be difficult to overcome in the difficulty of one deck.The material that conventional interlayer thin-film electroluminescent displays part uses mainly is SrS:Ce, SrGa
2S
4: Ce, SrS:Cu etc., in the process of film preparation, because the difference of vapour pressure, the subnormal stoicheiometry of the sulfur content among the SrS causes serious mistake sulphur, and is although mend the crystallization that sulphur can improve material, bigger to the pollution of coating system; The tradition method for annealing can cause that the elements such as oxygen in the insulating barrier spread to luminescent layer, and destroys the performance of luminescent layer.
Three, summary of the invention
In order to overcome the existing in prior technology problem, the present invention selects suitable electroluminescent material, utilizes strong ultraviolet light that electroluminescence (EL) device sends as excitaton source, and excitated fluorescent powder makes it to produce visible light.Provide a kind of electricity to cause/photic mixed luminescence display device, strengthen conventional interlayer thin-film electroluminescent displays part luminous intensity to reach.
Technical program of the present invention lies in: in traditional sandwich electroluminescent display, the material selection of the electroluminescence layer between two dielectric layers can produce the luminescent material ZnF of ultraviolet light
2: GdF
3The bar shaped density of luminescence generated by light layer and ITO electrode and relative position be overlapping the alignment fully, bonding.Electroluminescent material can be launched strong ultraviolet light under the different frequency power drives, the exciting light electroluminescent layer realizes monochrome, multiple flat panel display such as colour.
The present invention compares the beneficial effect that is had with prior art: (1) is because structure and the electroluminescent material of selecting for use cause this device to realize monochromatic and colored the demonstration easily.(2) widened the used material of the monochromatic and colored demonstration of realization.(3) have only ITO electrode pair electroluminescence (EL) emission to produce and absorb, absorption loss reduces greatly, and emissive porwer has strengthened twice approximately.
Four, description of drawings
Fig. 1 electricity causes/photic mixed luminescence display device structural representation
Among the figure: electrode, 3 dielectric layers, 4 electroluminescence layers, 5 dielectric layers, 6 that 1 substrate layer, 2 is photo-etched into bar shaped are photo-etched into ITO electrode, 7 luminescence generated by light layers, 8 clear glasses of bar shaped
Five, embodiment
Below in conjunction with accompanying drawing to electricity of the present invention cause/photic mixed luminescence display device is further described.The present invention is that a kind of thin-film electro of sandwich construction causes/photic mixed luminescence device.
Electricity of the present invention causes/and photic mixed luminescence display device comprises: is followed successively by substrate layer 1, is photo-etched into electrode 2, dielectric layer 3, electroluminescence layer 4, dielectric layer 5, the ITO electrode 6 that is photo-etched into bar shaped, luminescence generated by light layer 7, the thin clear glass 8 of bar shaped.
Execution mode one
1. choosing has the substrate layer 1 that is photo-etched into strip electrode 2 (Al), line density 3/mm.
2. vacuum sputtering or electron beam evaporation evaporation SiO on electrode 2
2(dielectric layer 3).
3. at SiO
2On the dielectric layer 3, adopt electron beam evaporation plating can produce the luminescent material ZnF of ultraviolet light
2: GdF
3(electroluminescence layer 4).
4. on electroluminescence layer 4, vacuum sputtering or electron beam evaporation SiO
2(dielectric layer 5).
5. on dielectric layer 5, use bushing evaporation In
2O
3: Sn (ITO electrode 6), 3/mm of line density is vertical with the Al strip electrode.
6. on clear glass 8, vacuum evaporation Y successively
2O
3: Eu (red), Zn
2SiO
4: Mn (green), BaMgAl
10O
17: Eu (indigo plant), red, green, blue luminescence generated by light layer 7 is distributed be bar shaped alternate, its bar shaped density and relative position and the density and the relative position that are photo-etched into the ITO electrode 6 of bar shaped are consistent.
The bar shaped density of luminescence generated by light layer 7 and ITO electrode and relative position be overlapping the alignment fully, after bonding, the sealing, makes flat-panel display device of the present invention.This flat-panel monitor is exchanging under the 100-380V voltage, is colored and shows.
Execution mode two
Green light material ZnS:Cu or red light material SrS:Eu or blue material aluminate with electron beam evaporation plating or silk screen printing on thin clear glass 8; Other technologies are identical with execution mode one with condition, and this flat-panel monitor is exchanging under the 100-380V voltage, are monochromatic show (red green or blue).
Two dielectric layers 3,5 of the present invention both can adopt same material, also available different materials.Two dielectric layers can adopt symmetrical structure (two layers of thickness unanimity) and unsymmetric structure (two layers of thickness is different).Dielectric layer 3,5 of the present invention can also be selected yttria (Y for use
2O
3), hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), silicon nitride Si
3N
4, tantalum pentoxide Ta
2O
5And ferroelectric material lead titanates PbTiO
3With barium titanate BaTiO
3Deng material.
The material of electroluminescent material layer 4 of the present invention can also adopt the luminescent material ZnF that can produce ultraviolet light
2: Gd
2S
3, ZnF
2: Gd
2O
3Deng.
The material of luminescence generated by light layer 7 of the present invention also can adopt green light material ZnS:Cu, BaAl
12O
19: Mn, SrAl
2O
4: Eu, (Ce, Tb) MgAl
11O
19, LaPO
4: Tb, Ce; Red light material CaS:Eu, SrS:Eu, (Y, Gd) BO
3Blue light material BaMgAl
14O
23: the combination of one or more among the Eu.
Claims (5)
1. an electricity causes/photic mixed luminescence display device, comprise: be followed successively by substrate layer (1), be photo-etched into electrode (2), dielectric layer (3), electroluminescence layer (4), dielectric layer (5), the ITO electrode (6) that is photo-etched into bar shaped, the clear glass (8) of bar shaped, it is characterized in that: the material selection of the electroluminescence layer (4) between two dielectric layers (3) and (5) can produce the luminescent material ZnF of ultraviolet light
2: GdF
3The bar shaped density of luminescence generated by light layer 7 and ITO electrode and relative position be overlapping the alignment fully, bonding.
2. the electricity according to claim 1 causes/photic mixed luminescence display device, it is characterized in that: dielectric layer (3,5) both can adopt same material, also can adopt different materials, two dielectric layers (3,5) can adopt symmetrical structure (two layers of thickness unanimity) and unsymmetric structure (two layers of thickness is different).
3. cause/photic mixed luminescence display device according to claim 1,2 described electricity, it is characterized in that: the material of electroluminescence layer (4) also adopts ZnF
2: Gd
2S
3, ZnF
2: Gd
2O
3
4. cause/photic mixed luminescence display device according to claim 1,2 described electricity, it is characterized in that: the material of dielectric layer (3,5) also can be: yttria (Y
2O
3), hafnium oxide (HfO
2), silica (SiO
2), aluminium oxide (Al
2O
3), silicon nitride Si
3N
4, tantalum pentoxide Ta
2O
5And ferroelectric material lead titanates PbTiO
3With barium titanate BaTiO
3
5. cause/photic mixed luminescence display device according to claim 1,2 described electricity, it is characterized in that: the material of luminescence generated by light layer (7) adopts green light material ZnSCu, BaAl
12O
19: Mn, SrAl
2O
4: Eu, (Ce, Tb) MgAl
11O
19, LaPO
4: Tb, Ce; Red light material CaS:Eu, SrS:Eu, (Y, Gd) BO
3Blue light material BaMgAl
14O
23: the combination of one or more among the Eu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031467768A CN1481202A (en) | 2003-06-26 | 2003-06-26 | Display device mixed electro luminescence with luminescence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031467768A CN1481202A (en) | 2003-06-26 | 2003-06-26 | Display device mixed electro luminescence with luminescence |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1481202A true CN1481202A (en) | 2004-03-10 |
Family
ID=34156116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031467768A Pending CN1481202A (en) | 2003-06-26 | 2003-06-26 | Display device mixed electro luminescence with luminescence |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1481202A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161634A (en) * | 2015-09-10 | 2015-12-16 | 京东方科技集团股份有限公司 | Active matrix/organic light emitting diode (AMOLED) device, fabrication method thereof and display device fabricated from same |
| CN109545932A (en) * | 2017-09-22 | 2019-03-29 | 三星显示有限公司 | Light emitting diode |
-
2003
- 2003-06-26 CN CNA031467768A patent/CN1481202A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161634A (en) * | 2015-09-10 | 2015-12-16 | 京东方科技集团股份有限公司 | Active matrix/organic light emitting diode (AMOLED) device, fabrication method thereof and display device fabricated from same |
| CN105161634B (en) * | 2015-09-10 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of AMOLED devices and preparation method thereof, by its obtained display device |
| CN109545932A (en) * | 2017-09-22 | 2019-03-29 | 三星显示有限公司 | Light emitting diode |
| CN109545932B (en) * | 2017-09-22 | 2024-03-08 | 三星显示有限公司 | Light emitting diode |
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