CN1479171A - Oxidative carbonyl iron photoetching masking film plate - Google Patents
Oxidative carbonyl iron photoetching masking film plate Download PDFInfo
- Publication number
- CN1479171A CN1479171A CNA021393974A CN02139397A CN1479171A CN 1479171 A CN1479171 A CN 1479171A CN A021393974 A CNA021393974 A CN A021393974A CN 02139397 A CN02139397 A CN 02139397A CN 1479171 A CN1479171 A CN 1479171A
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- CN
- China
- Prior art keywords
- carbonyl iron
- iron oxide
- glass substrate
- oxide film
- orange
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
A photoetching mask with carbonyliron oxide film is prepared by chemical vapour deposition method (CVD), that is, the pentacarbonyl iron vapour carried by N2 reacts on the surface of glass to generate a carbonyliron oxide film (4Fe(Co)5+3O2=2Fe2O3+20CO). Its advantages are simple process and low cost.
Description
The invention relates to a carbonyl iron oxide mask, in particular to a microelectronic circuit photoetching mask, namely a manufacturing method of a carbonyl iron oxide mask product.
The rapid development of semiconductor and integrated circuit fabrication technology has enabled the semiconductor electric wafer to reach 300mm, 400mm, and the photolithography resolution is getting finer and finer, reaching the nanometer level, and the quality requirement for the photolithography mask is getting higher and higher, so the requirement for the module photolithography mask process for manufacturing semiconductor and integrated circuit (SOC) is getting higher and higher. The current substrate fabrication of semiconductors and integrated circuits is based on chromium oxide, which has several disadvantages: high production cost, high difficulty of nesting photoetching and the like.
The invention aims to provide a novel mask plate product, namely a carbonyl iron oxide mask plate is manufactured by a chemical vapor deposition method (CVD method) under the condition of 120 +/-2 ℃, the product is simple and convenient to operate, easy to photo-etch, stable in quality, capable of performing nested photo-etching, low in production cost, free from size limitation, capable of adjusting the thickness of a film layer according to requirements and capable of completely meeting the requirements of manufacturing semiconductors, integrated circuits and fine electronic components with different specifications. Through pilot plant test and small-batch production in the last 10 years, the technology completely achieves batch production.
In order to achieve the above object, the present invention is realized by: cutting the plate-making glass according to requirements, polishing and washing the cut glass substrate, ultrasonically cleaning, polishing, ultrasonically cleaning for the second time, immersing in concentrated sulfuric acid, and finally depositing. Wherein the polished glass substrate is subjected to ultrasonic cleaning, pickling and deposition for 2 times. And ultrasonically cleaning the cleaned glass substrate by using deionized water (the conductivity exceeds 5 megaohms), polishing for about 40 minutes in the positive and negative aspects, ultrasonically cleaning for the second time, and finally immersing in concentrated nitric acid. The glass substrate after being immersed in the concentrated nitric acid is dried, the carbonyl iron oxide film layer is deposited to form the carbonyl iron oxide film plate, and the mask plate is used for photoetching plate making of semiconductor and integrated circuit film plates.
The deposition process flow of the invention is as follows: and (3) introducing the compressed nitrogen into the iron pentacarbonyl container after passing through a dryer and a rotor flow meter, and bubbling the nitrogen in the iron Wangcarbonyl liquid and carrying out iron pentacarbonyl steam. After being measured by a drier rotor flowmeter, the oxygen is mixed with the pentacarbonyl iron steam and rises to the surface of the plate-making glass, and then a chemical reaction is carried out to obtain the ferric oxide film plate.
The main process indexes are as follows:
oxygen flow of 0.8-1.0L/min
Oxygen flow of 0.6-0.8L/min
The heating temperature is 120 +/-2 DEG C
The reaction time is 4-6 minutes
Soft water conductivity is not less than 5M omega
Water flow 2 l/min
Soaking in concentrated nitric acid for 20 hr
Polishing time 30-40 minutes (front and back)
Orange to orange in coating film color
Finished product area is 2-30 inches
The product of the invention has the following technical properties and indexes:
appearance: the surface is uniform and bright, has no blue strips, water marks, pinholes, scratches and is orange (or reddish orange).
Film thickness: 1700-2200A
Optical density: d is more than or equal to 2 (less than or equal to 400 nm).
Reflectance ratio: r is less than or equal to 30 percent of the front surface (400-500 nm).
Wear resistance: m is less than or equal to 500 circles.
Etching time: and 27 seconds is 10 seconds.
Pinhole density: no needles larger than 5 microns were present, and the density of needle holes smaller than 5 microns was shown in Table one.
Surface flatness table two:
| Pinhole Density rating | Pinhole Density (number/cm)2) |
| Class A | ≤0.05 |
| Class B | ≤0.10 |
| Class C | ≤0.15 |
unit: um
| Product specification | Flatness and grade | ||
| Class A | Class B | Class C | |
| 50×50×2.0 | ≤1 | ≤2 | ≤5 |
| 63.5×63.5×2.0 | ≤1 | ≤3 | ≤7 |
| 76×76×2.0 | ≤2 | ≤5 | ≤10 |
| 101×101×2.0 | ≤2.5 | ≤6 | ≤15 |
| 127×127×2.0 | ≤3 | ≤6 | ≤15 |
The main technical principle is as follows: nitrogen gas was used to carry iron pentacarbonyl vapor { Fe (CO)5And reacting on the surface of the glass substrate at the temperature of 120 +/-2 ℃, and generating a layer of carbonyl iron oxide film on the surface of the glass substrate after the reaction, and releasing a small amount of CO gas. The method is called chemical vapor deposition (CVD method for short), and the main reaction equation is as follows:
Claims (2)
1. a carbonyl iron oxide mask. The invention is characterized in that: carrying Fe (CO) with nitrogen by CVD5Steam reacts with the surface of the glass substrate at 120 +/-2 ℃ to generate a layer of carbonyl iron oxide film on the surface of the glass substrate, and the reaction equation is as follows:
2. the carbonyl iron oxide mask as claimed in claim 1, wherein the cut glass substrate is polished, cleaned with ultrasonic deionized water, and polished. And (4) carrying out secondary ultrasonic cleaning, finally immersing in concentrated nitric acid, drying and depositing a carbonyl iron oxide film layer.
The main process indexesare as follows:
oxygen flow of 0.8-1.0L/min
Oxygen flow of 0.6-0.8L/min
The heating temperature is 120 +/-2 DEG C
The reaction time is 4-6 minutes
Soft water conductivity is not less than 5M omega
Water flow 2 l/min
Soaking in concentrated nitric acid for 20 hr
Polishing time 30-40 minutes (front and back)
Orange to orange in coating film color
Finished product area is 2-30 inches
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021393974A CN1479171A (en) | 2002-08-30 | 2002-08-30 | Oxidative carbonyl iron photoetching masking film plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021393974A CN1479171A (en) | 2002-08-30 | 2002-08-30 | Oxidative carbonyl iron photoetching masking film plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1479171A true CN1479171A (en) | 2004-03-03 |
Family
ID=34147429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021393974A Pending CN1479171A (en) | 2002-08-30 | 2002-08-30 | Oxidative carbonyl iron photoetching masking film plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1479171A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103235481A (en) * | 2013-03-28 | 2013-08-07 | 深圳市科利德光电材料股份有限公司 | Glue uniformization chromium plate manufacturing process |
-
2002
- 2002-08-30 CN CNA021393974A patent/CN1479171A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103235481A (en) * | 2013-03-28 | 2013-08-07 | 深圳市科利德光电材料股份有限公司 | Glue uniformization chromium plate manufacturing process |
| CN103235481B (en) * | 2013-03-28 | 2015-06-17 | 深圳市科利德光电材料股份有限公司 | Glue uniformization chromium plate manufacturing process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |