CN1476055A - Method of reducing reflectivity of compound crystal silicon layer - Google Patents
Method of reducing reflectivity of compound crystal silicon layer Download PDFInfo
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- CN1476055A CN1476055A CNA021297800A CN02129780A CN1476055A CN 1476055 A CN1476055 A CN 1476055A CN A021297800 A CNA021297800 A CN A021297800A CN 02129780 A CN02129780 A CN 02129780A CN 1476055 A CN1476055 A CN 1476055A
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Abstract
The method is the follows. A semiconductor substrate is provided as it is placed in a reactor in single wafer type chemical gas phase deposition. A gas contained silicon is led into the reactor to form polysilicon layer on substrate surface. Hydrogen is led into the reactor to regulate size of crystal grain at upper surface of the polysilicon and oxygen is led into the reactor to form film of silicon dioxide above polysilicon layer.
Description
Invention field
The invention relates to the process technique of semiconductor device (semiconductor device), particularly relevant for the reative cell (single-wafer chemicalvapot deposition chamber) that utilizes in the chemical vapour deposition (CVD) of single wafer formula, that is reduce the method for compound crystal silicon layer (polysilicon layer) reflectivity with synchronous processing procedure (in-situ process).
Background technology
As everyone knows, in the fabrication steps of semiconductor device, light is by the light source supply of microlithography system (Photolthographysystem), by light shield (Photo-mask), then with the photoresist layer (Photoresist) of the design transfer on the light shield to lower floor.Yet when the material that is positioned at the photoresist layer below belongs to highly reflective material (high reflectivity material), for example when metal level (metal layer) or compound crystal silicon layer, when irradiate light in above-mentioned highly reflective material, cause reflection improperly easily, and destroy the resolution of pattern significantly, this light reflection and influence the pattern resolution and relate to some mechanism.
Address the above problem for the reflection that reduces light, the dealer proposes a kind of anti-reflection layer (knti-reflection layer that is provided with between compound crystal silicon layer and photoresist layer; AL) method, that is before the first resistance layer of coating, earlier with chemical vapour deposition technique or spin-coating method (spin coating), practise bottom anti-reflective applicator (the bottom anti-reflection coating that claims in the surface of the material of high reflectances such as above-mentioned compound crystal silicon layer to form; BARC), below for an example so that relevant conventional art to be described.
Consult shown in Figure 1ly, it shows that conventional art forms the flow chart on the compound crystal silicon layer surface with antiradar reflectivity, and S301-S305 represents with step.
At first, in step S301, the semiconductor-based end, be positioned in the reative cell of batch formula chemical vapour deposition (CVD) (batch-type chemical vapor deposition).
In step S302, show SiH
4Import in batch formula reative cell, above the semiconductor-based end, to form compound crystal silicon layer.
Then, in step S303, expression moves to electricity slurry reinforced chemical vapour deposition (CVD) (plasma enhanced chemical vapor deposition:PECVD) reative cell with the above-mentioned semiconductor-based end.
Then, in step S304, be presented in the reative cell of the reinforced chemical vapour deposition (CVD) of electricity slurry, deposition nitrogen-oxygen-silicon compound layer is to form anti-reflection layer on the compound crystal silicon layer surface.
Then, then be to show to carry out traditional micro-photographing process (PhotolithograPhy) and etching step (etching) among the step S305, with the compound crystal silicon pattern that obtains wanting, gate electrode (gateelectrode) for example.
The reative cell that the formula chemical vapour deposition (CVD) is criticized in the conventional art utilization can form compound crystal silicon layer simultaneously on the surface at the semiconductor-based end of most sheets (semiconductor crystal wafer), and the processing procedure time and the cost of manufacture of saving each chip semiconductor wafer.Its major defect is:
Because the current densities downsizing gradually of advanced technology in recent years has been difficult to bear manufacture of semiconductor technology inaccuracy, for example utilize the compound crystal silicon layer of the reative cell deposition of criticizing the formula chemical vapour deposition (CVD) all once not good usually.
Moreover therefore the big relatively volume that has owing to the reative cell of criticizing the formula chemical vapour deposition (CVD), deposits in the process of compound crystal silicon layer, can produce a large amount of particles and residuals, might produce serious problem in successive process.Moreover, utilize conventional art, among different chemical vapour deposition (CVD) boards, deposit respectively, to form the anti-reflection layer that above-mentioned compound crystal silicon layer and above-mentioned nitrogen silicon compound layer constitute, this will cause the long processing procedure time.Therefore, having to provide a kind of reflectivity that can reduce compound crystal silicon layer, and the method for the shortcoming of improvement conventional art
Summary of the invention
The purpose of this invention is to provide a kind of method that reduces the reflectivity of compound crystal silicon layer,, reach the purpose of the reflectivity that reduces compound crystal silicon layer by the reative cell of single wafer formula chemical vapour deposition (CVD).
Another object of the present invention provides a kind of method that reduces the reflectivity of compound crystal silicon layer, reaches all once the purposes that promote deposited material.
A further object of the present invention provides a kind of method that reduces the reflectivity of compound crystal silicon layer, reduces reflectivity by handling or compound crystal silicon layer is produced react at the graphic chemical vapour deposition technique of single crystalline substance, reaches the purpose that shortens the processing procedure time.
The object of the present invention is achieved like this: a kind of method that reduces the reflectivity of compound crystal silicon layer is characterized in that: which comprises at least the following step:
(1) provides the semiconductor substrate;
(2) be positioned over the reactor of single wafer formula chemical vapour deposition (CVD) the above-mentioned semiconductor-based end;
(3) import silicon-containing gas in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), form compound crystal silicon layer with surface at the above-mentioned semiconductor-based end;
(4) import hydrogen in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), to adjust the crystallite dimension of above-mentioned compound crystal silicon layer upper surface;
(5) import oxygen in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), above above-mentioned compound crystal silicon layer, to form silica membrane.
Method of the present invention more comprises and imports ammonia in the reative cell of described single wafer formula chemical vapour deposition (CVD), handling above-mentioned compound crystal silicon layer surface, and forms the step of silicon nitride film.It comprises that more the importing nitrous oxide in the reative cell of described single wafer formula chemical vapour deposition (CVD), forms the step of nitrogen-oxygen-silicon compound film to handle described compound crystal silicon layer surface.The thickness of described compound crystal silicon layer is between the 500-2500 dust.The depositing temperature of described compound crystal silicon layer is greatly between 350-680 ℃.The deposition pressure of described compound crystal silicon layer is between 150-400mtorr.
It also comprises the following steps: method of the present invention
Moved to the reative cell of the reinforced chemical vapour deposition (CVD) of electricity slurry the above-mentioned semiconductor-based end; And at described silica membrane surface formation nitrogen-oxygen-silicon thing film.Described silicon-containing gas is selected from monosilane.
The present invention also provides the another kind of method that reduces the reflectivity of compound crystal silicon layer, at first, provides the semiconductor substrate.Then, the described semiconductor-based end, be positioned over the reactor of single wafer formula chemical vapour deposition (CVD), then, import silicon-containing gas in the reative cell of described single wafer formula chemical vapour deposition (CVD), form compound crystal silicon layer with surface at the described semiconductor-based end.Then, import ammonia and nitrous oxide in the reative cell of described single wafer formula chemical vapour deposition (CVD), above above-mentioned compound crystal silicon layer, to form the nitrogen-oxygen-silicon compound film.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Description of drawings
Fig. 1 forms the schematic flow sheet on the compound crystal silicon layer surface with antiradar reflectivity for conventional art.
Fig. 2 forms the schematic flow sheet on the compound crystal silicon layer surface with antiradar reflectivity for the present invention.
Fig. 3 forms the schematic flow sheet on the compound crystal silicon layer surface with antiradar reflectivity for the embodiment of the invention 2.
Fig. 4-Fig. 7 reduces the processing procedure generalized section of the reflectivity of compound crystal silicon layer for the present invention.
Fig. 8-Figure 11 is the processing procedure generalized section that the embodiment of the invention 2 reduces the reflectivity of compound crystal silicon layer.
Embodiment
Embodiment 1
Consult Fig. 4-shown in Figure 7, be the processing procedure generalized section figure of the reflectivity of the reduction compound crystal silicon layer of the embodiment of the invention 1.
At first, consult shown in Figure 4, the semiconductor-based end 100 that is made of single crystal silicon material (semiconductor crystal wafer), be provided, it be positioned in the reative cell of single wafer formula chemical vapor deposition (CVD) then, for example adopt (Applid materials by Applied Materials; AMAT) the single wafer formula board of Zhi Zaoing, commodity are called " TPCC " (Thermal Process Common Centura)
Next, consult shown in Figure 5, silane (silane) is imported in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), form thickness on surface, the above-mentioned semiconductor-based ends 100 approximately between the compound crystal silicon layer 102 of 500-2500 dust, the depositing temperature of above-mentioned compound crystal silicon layer 102 is controlled at about 350-680 ℃, and deposition pressure is controlled at about 150-400mtorr.
Then, consult shown in Figure 6ly, hydrogen is imported in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), with the size of the silicon crystal grain of adjusting above-mentioned compound crystal silicon layer 102 upper surfaces.Afterwards, oxygen is imported in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), form silica membrane 104 on above-mentioned compound crystal silicon layer 102 surfaces, thereby reduce the reflectivity on compound crystal silicon layer 102 surfaces.
Secondly, consult shown in Figure 7, in order further to reduce the reflectivity on compound crystal silicon layer 102 surfaces, preferably again with ammonia oxygen (NH
3) and/or nitrogen oxide (N
2O) import in the reative cell of heavy kind of above-mentioned single wafer formula chemical gaseous phase, contain nitrogen film 106 with what above the above-mentioned compound crystal silicon layer 102 that has been formed with silica membrane 104, form silicon nitride or nitrogen-oxygen-silicon compound.
Consult the schematic flow sheet that the demonstration embodiment of the invention 1 shown in Figure 2 forms the compound crystal silicon layer surface with antiradar reflectivity, the embodiment of the invention 1 is represented by step S401-step S405.
At first, represent the semiconductor-based end is positioned in the reative cell of single wafer formula chemical vapour deposition (CVD) at step S401.
Step S402 represents SiH
4In the importing reative cell, above the semiconductor-based end, to form compound crystal silicon layer.
Then, step S403 represents hydrogen is imported above-mentioned reative cell, to adjust the silicon crystal grain size on compound crystal silicon layer surface.
Step S404 represents oxygen is imported above-mentioned reative cell, to form silica membrane on above-mentioned compound crystal silicon layer surface.
At last, in step S405, with ammonia (NH
3) and/or nitrous oxide (N
2O) import above-mentioned reative cell, to reduce the reflectivity of above-mentioned compound crystal silicon layer.
Embodiment 2
Consult Fig. 8-shown in Figure 11, be the processing procedure generalized section of the reflectivity of the reduction compound crystal silicon layer of embodiments of the invention 2.
At first, consult shown in Figure 8, the one semiconductor-based end 200 (semiconductor crystal wafer) that is made of single crystal silicon material, be provided, it be positioned in the reative cell of single wafer formula chemical vapor deposition (CVD) then, for example adopt by Material Used (Applied Materials; AMAT) the single wafer formula board of company's manufacturing, commodity are by name " TPCC " (Thermal Process Common Centura).
Next, consult shown in Figure 9, silane is imported in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), to form thickness on surface, the above-mentioned semiconductor-based ends 200 approximately between the compound crystal silicon layer 202 of 500-2500 dust, the depositing temperature of above-mentioned compound crystal silicon layer 202 is controlled at about 350-6800 ℃, and deposition pressure is controlled at about 150-400mtorr.
Then, consult shown in Figure 10ly, ammonia and/or nitrous oxide are imported in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), contain nitrogen film 204 by what silicon nitride or nitrogen-oxygen-silicon compound constituted to form one at above-mentioned compound crystal silicon layer 202.Above-mentionedly contain the reflectivity that nitrogen film 204 can reduce compound crystal silicon layer 202, and form with the middle deposition of above-mentioned compound crystal silicon layer 202 at same reative cell.
Then, moved to the reative cell of the electricity reinforced chemical vapour deposition (CVD) of slurry (plasmaenhanced chemical vapor deposition:PECVD) the above-mentioned semiconductor-based end 200, next, form by nitrogen-oxygen-silicon compound layer 206 on the above-mentioned surface that contains nitrogen film 204, be used as anti-reflection layer, further to reduce the reflectivity of compound crystal silicon layer 202.
Shown in Figure 3, show that the embodiment of the invention 2 forms the schematic flow sheet on the compound crystal silicon layer surface with antiradar reflectivity, present embodiment 2 is represented by step S501-step S505.
At first, represent the semiconductor-based end is positioned in the reative cell of single wafer formula chemical vapour deposition (CVD) at step S501.
Step S502 represents SiH
4In the importing reative cell, above the semiconductor-based end, to form compound crystal silicon layer.
Then, step S503 represents ammonia and/or nitrous oxide are imported above-mentioned reative cell, to reduce the reflectivity of compound crystal silicon layer.
Step S504 represents the semiconductor-based end is moved to the reative cell of the reinforced chemical vapour deposition (CVD) of electricity slurry.
At last, among the step S505, deposition nitrogen-oxygen-silicon compound layer above above-mentioned compound crystal silicon layer is to be used as anti-reflection layer.
Feature of the present invention and effect:
The present invention is the reative cell with the chemical vapour deposition (CVD) of single wafer formula, with the method for the reflectivity that reduces compound crystal silicon layer, can promote deposited material all once.
Moreover the method according to this invention can be at single wafer formula chemical vapour deposition technique, and to handle or to make compound crystal silicon layer produce reaction and the reduction reflectivity, therefore, method of the present invention can shorten the processing procedure time.
Though the present invention drags example to disclose as above with preferable reality, so it is not in order to limiting the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, institute does to change and retouch, and all belongs within protection scope of the present invention.
Claims (8)
1, a kind of method that reduces the reflectivity of compound crystal silicon layer is characterized in that: which comprises at least the following step:
(1) provides the semiconductor substrate;
(2) be positioned over the reactor of single wafer formula chemical vapour deposition (CVD) the above-mentioned semiconductor-based end;
(3) import silicon-containing gas in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), form compound crystal silicon layer with surface at the above-mentioned semiconductor-based end;
(4) import hydrogen in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), to adjust the crystallite dimension of above-mentioned compound crystal silicon layer upper surface;
(5) import oxygen in the reative cell of above-mentioned single wafer formula chemical vapour deposition (CVD), above above-mentioned compound crystal silicon layer, to form silica membrane.
2, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1, it is characterized in that: it comprises that more the importing ammonia is in the reative cell of described single wafer formula chemical vapour deposition (CVD), handling above-mentioned compound crystal silicon layer surface, and form the step of silicon nitride film.
3, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1, it is characterized in that: it comprises that more the importing nitrous oxide in the reative cell of described single wafer formula chemical vapour deposition (CVD), forms the step of nitrogen-oxygen-silicon compound film to handle described compound crystal silicon layer surface.
4, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1 is characterized in that: the thickness of described compound crystal silicon layer is between the 500-2500 dust.
5, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1 is characterized in that: the depositing temperature of described compound crystal silicon layer is greatly between 350-680 ℃.
6, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1 is characterized in that: the deposition pressure of described compound crystal silicon layer is between 150-400mtorr.
7, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1 it is characterized in that: further comprising the following step:
Moved to the reative cell of the reinforced chemical vapour deposition (CVD) of electricity slurry the above-mentioned semiconductor-based end; And at described silica membrane surface formation nitrogen-oxygen-silicon thing film.
8, the method for the reflectivity of reduction compound crystal silicon layer according to claim 1 is characterized in that: described silicon-containing gas is selected from monosilane.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021297800A CN1476055A (en) | 2002-08-13 | 2002-08-13 | Method of reducing reflectivity of compound crystal silicon layer |
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|---|---|---|---|
| CNA021297800A CN1476055A (en) | 2002-08-13 | 2002-08-13 | Method of reducing reflectivity of compound crystal silicon layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288267A (en) * | 2023-01-06 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Technological method for furnace tube |
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2002
- 2002-08-13 CN CNA021297800A patent/CN1476055A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288267A (en) * | 2023-01-06 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Technological method for furnace tube |
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