CN1476027A

CN1476027A - Preparation method of ceramic grain boundary layer condensor

Info

Publication number: CN1476027A
Application number: CNA03126252XA
Authority: CN
Inventors: 锐张; 张锐; 王海龙; 许红亮; 关绍康
Original assignee: Zhengzhou University
Current assignee: Zhengzhou University
Priority date: 2003-07-16
Filing date: 2003-07-16
Publication date: 2004-02-18
Anticipated expiration: 2023-07-16
Also published as: CN1301516C

Abstract

The method selects hexagonal silicon carbide or relaxation iron electric material in semiconduction as ceramic basic material, selects low eutectic mixture consisting of copper oxide, aluminium oxide, magnesium oxide and silicon oxide as high insulation boundary phase to prepare boundary ceramic capacitor by one-time buring through utilizing article wrapping up technique to realize distributive homogenization for structure and phase.

Description

Pottery brilliant interlayer capacitor preparation method

Affiliated technical field

The present invention relates to ceramic capacitor preparation technology, be specifically related to a kind of pottery brilliant interlayer capacitor preparation method.

Background technology

In recent years, the miniaturization of electronics electronic circuit, densification have had swift and violent development, and electronic ceramic more and more is subject to people's attention as the effect on electronics industry basis, have also obtained critical role in high-tech sector.The high frequency characteristics that ceramic capacitor is little with its volume, capacity is big, simple in structure, good, various in style, cheap, be convenient to produce in enormous quantities and be widely used in fields such as household electrical appliance, communication equipment, industrial instrumentation instrument.Germany, the U.S. etc. have begun one's study ceramic for since the capacitor of medium before and after nineteen twenty, capacitor ceramic material has obtained extensive studies and development, new material continues to bring out, and has successively developed temperature compensating capacitor pottery, thermostable type capacitance ceramic, low-temperature sintering capacitance ceramic, irreducibility capacitance ceramic, ferroelectric condenser pottery etc.

Along with electronic devices and components develop to miniaturization day by day, requirement is increasing as the dielectric constant of the material of capacitor.The method of raising dielectric constant commonly used is with existing ceramic capacitor mutual superposition, forms multi-layer capacitor, carries out only petrochemical industry then and handles, and adds external electrode, and corresponding volume can reduce greatly.But solely in the petrochemical process, the problem such as aging of interior electrode composition control, cost and multi-layer capacitor is all restricting the solely development of petrochemical industry capacitor.Therefore, grain-boundary layer capacitor just becomes one of research focus of contemporary ceramic capacitor.Grain-boundary layer capacitor is as a kind of novel semi-conductor capacitor, for ceramic capacitor develops the prospect that provides good to little, the capacious direction of volume.On the semiconductor grain interface, the very high solid solution insulating barrier of one layer resistivity is as grain boundary layer, grain boundary layer is the real medium of this medium, therefore and crystal grain can be considered the electrode of galvanic circle, and whole ceramic body just can be regarded a large capacitor that is combined by the mode of many small capacitors by serial or parallel connection as.

The boundary ceramics capacitor has very high dielectric constant, this just means the capacitor that can make high power capacity in the small size scope, preferably resolve the contradiction of miniaturization and high power capacity, it is compared with other ceramic capacitor, dielectric constant or capacitance are steady with variation of temperature, and the suitable height of operating voltage has very high reliability.Compare with traditional ceramic capacitor, it has very high dielectric constant; Simultaneously, its ageing resistace is superior to multi-layer capacitor far away.The unique advantage of these of grain-boundary layer capacitor will play an important role in the development process of microelectric technique, such as capacity cell in traditional integrated circuit all is circumscribed, this is because traditional capacitor is difficult to accomplish miniaturization and jumbo unification, there has been the boundary ceramics capacitor just can utilize the filming technology to make film boundary ceramics capacitor, can be embedded in the integrated circuit (IC) chip.

The boundary ceramics capacitor of technology comparative maturity is to contain BaTiO at present ₃The boundary ceramics capacitor of series, but these materials all are traditional relaxation ferroelectric material basically, and its preparation is all made complex process, cost height through double firing process; And grain boundary structure is not easy to realize homogenizing, and structure is inhomogeneous, causes over-voltage breakdown easily, and dependability is poor.Simultaneously because the hot coefficient and the Si difference of existing boundary ceramics capacitor material are bigger, even matching is also bad in the embedding integrated circuit (IC) chip.

Summary of the invention

The object of the present invention is to provide once-firing to prepare the method for grain-boundary layer capacitor, to overcome deficiencies such as prior art processes complexity, cost height, grain boundary structure be inhomogeneous.

Technical scheme of the present invention is:

The boundary ceramics method of preparing capacitor comprises and selects ceramic matrix, packing technology, firing process, the steps include:

A, the relaxation ferroelectric material selecting hexagonal carborundum for use or have semiconduction select for use one or more eutectic mixtures to form crystal boundary phase material as ceramic matrix material;

B, adopt the particle technique for packing, with ceramic matrix material and crystal boundary mutually material wrap up mixing according to the ratio of 65-80: 35-20, crystal boundary phase material is evenly distributed on around the ceramic matrix material particle, form crystal boundary phase material layer;

C, employing single firing process are fired the material after wrapping up among the b, and firing temperature is 650-1650 ℃, and heating rate is 300 ℃-700 ℃/hour, and temperature retention time is 0.5-4 hour, promptly makes the boundary ceramics capacitor of matrix semiconducting, the high insulating of crystal boundary.

In above-mentioned preparation method, the relaxation ferroelectric material with semiconduction is a kind of in barium titanate, lead titanates, the strontium titanates; Eutectic mixture is one or more in cupric oxide, aluminium oxide, magnesium oxide, the silica, and the crystal boundary phase content is 5-35% (percentage by weight); The packing technology method is sol-gel method or solution reaction method; Single firing process is normal pressure-sintered or hot pressed sintering.

Compared with prior art, the invention has the advantages that:

1, the present invention has also selected for use the semi-conducting material of other type as capacitor matrix except selecting for use traditional relaxation ferroelectric material as the ceramic matrix in a creative way.With SiC is example, it is a kind of semi-conducting material, have characteristics such as big thermal conductivity, high critical breakdown electric field, high forbidden band, high carrier mobility and are optimal selection as the principal crystal grain of grain-boundary layer capacitor, in addition because SiC itself is a semiconductor, can adopt once-firing, simplify the manufacturing process of grain-boundary layer capacitor; SiC is high temperature resistant and corrosion resistant performance makes the capacitor for preparing possess the ability of steady operation under mal-condition.

2, the advanced particle packaging method of employing is realized the dispersing uniformity between the different crystal boundaries phases, has guaranteed the electrical conductance of blapharoplast and the high-insulativity of crystal boundary.

3, adopt single firing process, simplified the preparation process of ceramic capacitor greatly, reduced cost, acquisition dielectric constant height, the ceramic grain-boundary layer capacitor that dependability is good, ageing properties is good, technology is simple, with low cost make the The Application of Technology of grain-boundary layer capacitor become possibility in popularization simultaneously.

4, the dielectric constant height of grain-boundary layer capacitor might part substitute traditional ceramic capacitor, and the application to the only stone multi-layer capacitor of traditional ceramics has simultaneously proposed challenge.

Embodiment

Further specify embodiment of the present invention and effect with following indefiniteness embodiment.

Embodiment 1

1, select basis material and crystal boundary phase material:

Select for use six side's phase silicon carbide particles as ceramic matrix material, basic granularity is 8 microns, and the largest particles is less than 28 microns, and minimum particle size is greater than 3 microns; The basic granularity of the relaxation ferroelectric material of selecting for use is the 2-25 micron;

The eutectic mixture of selecting for use aluminium oxide, magnesium oxide and silica to form be crystal boundary mutually;

Select silver nitrate, bismuth oxide, turpentine wet goods basic material for use, be configured to the silver slurry as electrode.

2, packing technology:

A. the powder of ceramic matrix material is added water and be configured to suspension-turbid liquid, ultrasonic dispersion 10 minutes places powerful stirring the on the magnetic stirring apparatus, and the pH value is 2;

B. prepare the compound solution of being made up of crystal boundary phase material, the pH value is 7;

C. adopt solution reaction packing technology method, in the ratio adding a of solution for preparing among the b with 75: 25 (volume ratio), the powerful stirring 10 minutes; Ammonia water titration forms colloid, is wrapping to the ceramic matrix material particle surface; Suction filtration cleans the composite granule behind the parcel, under 80 ℃ of temperature dry 4 hours then.

3, single firing process:

Adopting hot-pressing sintering technique, is in 15 millimeters the graphite jig with the composite powder diameter of packing into, carries out hot pressed sintering, and protective atmosphere is a nitrogen, and firing temperature is 1450 ℃, and heating rate is 600 ℃/hour, is incubated 1 hour, and pressure is 30 MPas.

Electrode applies: the silver slurry that will prepare is printed onto the agglomerate surface, 650 ℃ of following burning infiltrations, is incubated 0.5 hour, is prepared into the carborundum grain-boundary layer capacitor, and dielectric constant reaches more than 20000.

Embodiment 2

Selecting barium titanate for use is ceramic matrix material, and copper sulphate, magnesium nitrate are formed crystal boundary insulation phase, and the crystal boundary phase content is 25% (percentage by weight); Particle packing technology sol-gel method, process conditions such as embodiment 1; Adopt normal pressure-sintered technology once-firing, firing temperature is 950 ℃, and heating rate is 300 ℃/hour, temperature retention time 4 hours.The sample electrode preparation is with embodiment 1, and the dielectric constant that obtains capacitor is greater than 2500.

Embodiment 3

Select for use six side's phase silicon carbide particles as ceramic matrix material, selecting cupric oxide for use is the crystal boundary phase; Particle packing technology sol-gel method, process conditions such as embodiment 1; Adopt normal pressure-sintered technology once-firing, firing temperature is 900 ℃, and heating rate is 200 ℃/hour, temperature retention time 1 hour.Select silver nitrate, bismuth oxide, the turpentine wet goods basic material as electrode for use, be configured to the silver slurry, sample electrode prepare with embodiment 1, and the dielectric constant of acquisition capacitor is greater than 1800.

Claims

1, boundary ceramics method of preparing capacitor comprises and selects ceramic matrix material, packing technology, firing process, it is characterized in that:

C, employing single firing process are fired the material after b wraps up, and firing temperature is 650-1650 ℃, and heating rate is 300 ℃-700 ℃/hour, and temperature retention time is 0.5-4 hour.

2, according to the described boundary ceramics method of preparing capacitor of claim 1, it is characterized in that: said relaxation ferroelectric material with semiconduction is a kind of in barium titanate, lead titanates, the strontium titanates, and granularity is the 1-50 micron.

3, according to the described boundary ceramics method of preparing capacitor of claim 1, it is characterized in that: said eutectic mixture is one or more in cupric oxide, aluminium oxide, magnesium oxide, the silica, and the crystal boundary phase content is the 5-35% weight ratio.

4, according to the described boundary ceramics method of preparing capacitor of claim 1, it is characterized in that: said packing technology method is sol-gel method or solution reaction method.

5, according to the described boundary ceramics method of preparing capacitor of claim 1, it is characterized in that: said single firing process is normal pressure-sintered or hot pressed sintering, for the carborundum hot-pressing sintering technique, for the normal pressure-sintered technology of relaxation ferroelectric.