CN1466160A - Low-voltage composite switch - Google Patents
Low-voltage composite switch Download PDFInfo
- Publication number
- CN1466160A CN1466160A CNA021246297A CN02124629A CN1466160A CN 1466160 A CN1466160 A CN 1466160A CN A021246297 A CNA021246297 A CN A021246297A CN 02124629 A CN02124629 A CN 02124629A CN 1466160 A CN1466160 A CN 1466160A
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- controllable silicon
- chip microcomputer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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Abstract
A low voltage combination switch characterizes in having a thyristor and a relay in parallel connected to the low votlage, a drive circuit controlling the thyristor, a drive circuit controlling the relay, a single chip processor, a switch signal and a voltage zero-cross detecting circuits in which, the thyristor is taken in zero-cross to avoid inrust current and the relay is pick-up conducted and the thyristor is cut-off, neight heat nor any harmonic wave will occur when cutting-off, the thyristor can be taken to can-cell its conduct signal to realize automatic cut-off of current in zero-cross.
Description
The invention belongs to the electrical engineering field, particularly be applied to low-voltage reactive compensator capable.
At present, the reactive loss of low voltage electric network (380V/220V) is to drop into automatically and cut out and reach by being articulated in electric capacitor on the electrical network.Idle compensating control generally all is to adopt A.C. contactor or bidirectional triode thyristor to come the control capacitor break-make as switch element now, it is big to shove during the A.C. contactor switching, electrical network is impacted big, it is serious that probe of contactor is ablated, even contact melting welding phenomenon takes place, correspondingly life of capacitors also can shorten greatly; Though controllable silicon can be realized operating passing zero, thereby surge current reduces greatly, but because of the intrinsic physical characteristic of silicon controlled, exist big, the temperature rise of power consumption inevitably, generation is known as the problem that the harmonic wave composition of " electropollution " etc. can influence the long-term safety operation of equipment, big power consumption has not only been offset the energy-saving effect of reactive power compensation, and the life-span of whole device and reliability can not effectively ensure, even can influence the normal operation of whole electrical network.
The objective of the invention is to manufacture and design the low pressure combination switch, use A.C. contactor or the controllable silicon shortcoming of capacitor switching switch by way of compensation in the present low-pressure reactive compensation to overcome.
The objective of the invention is to reach like this: a kind of low-voltage composite switch the invention is characterized in: have the controllable silicon that is connected in parallel and relay (relay or the contactor that can be used for the low-voltage alternating-current circuit that link to each other with low pressure.The relay of the following stated with), single-chip microcomputer, the switching signal testing circuit that links to each other with single-chip microcomputer and the voltage zero-crossing detection circuit that links to each other with single-chip microcomputer of drive circuit, control controllable silicon drive circuit and the control relay drive circuit of control silicon controlled drive circuit, control relay.Single-chip microcomputer is controlled by following program circuit: at first initialization, finish that each pin of single-chip microcomputer and each register initial value being set; Control signal requires switch connection, in this way the on state for connecting, begin the place to program, as its unaccessed state, then drop into the A phase relay, detect B phase voltage zero-crossing timing, and when zero passage, throw B phase controllable silicon, detect C phase voltage zero-crossing timing, and when zero passage, throw C phase controllable silicon, drop into B, C phase relay, withdraw from BC phase controllable silicon, begin the place to program; Control signal is for closing, the requirement switch turn-offs, and off state then begins to locate to program in this way, as not being off state, then drop into B, C phase controllable silicon, cut out the BC phase relay, turn-off controllable silicon, allow the controllable silicon current over-zero automatically shut down, after time-delay a period of time, cut out the A phase relay, begin the place to program.
Take the present invention of above measure, during input, voltage zero-cross moment with the zero cross fired conducting of controllable silicon elder generation, treat current stabilization after, with relay adhesive conducting, cut out relay again.Because when dropping into, be to use the controllable silicon input when voltage zero-cross, the silicon controlled response speed is fast, also be to connect during at voltage zero-cross at the two ends of load, electric current can not produce sudden change, thereby has avoided shoving.And after stable, then use relay adhesive conducting, and cut out controllable silicon, at this moment, be use the relay conducting, owing to the major loop contact resistance of relay is little, power consumption is very little, does not generate heat and produces without any harmonic wave; When cutting out, with the controllable silicon input, relay cuts out, and the controllable silicon Continuity signal is cancelled, and the characteristic of utilizing the controllable silicon current over-zero to turn-off realizes that current over-zero automatically shuts down.
The present invention is described in further detail in conjunction with the accompanying drawings more below:
Accompanying drawing 1 is a circuit block diagram of the present invention;
Accompanying drawing 2 is program flow diagrams of the present invention;
Accompanying drawing 3 is circuit block diagrams of the embodiment of the invention;
Accompanying drawing 4 is program flow diagrams of the embodiment of the invention;
Accompanying drawing 5 is low-voltage circuit figure of the embodiment of the invention;
Accompanying drawing 6 is high-tension circuit figure of the embodiment of the invention.
Referring to accompanying drawing 1.Accompanying drawing 1 is a phase control circuit of the present invention, as need control three-phase, then increases two-phase phase controllable silicon drive circuit and controlled controllable silicon, increases two-phase phase relay circuit and controlled relay, increases two-phase phase voltage zero cross detection circuit.The present invention is made of with the phase voltage zero cross detection circuit that links to each other with single-chip microcomputer with the single-chip microcomputer of control phase relay drive circuit, the switching signal testing circuit that links to each other with single-chip microcomputer the controllable silicon that is connected in parallel of another termination load of termination electrical network and phase relay drive circuit, the control phase controllable silicon drive circuit of relay, control silicon controlled phase controllable silicon drive circuit, control relay.At present, above-mentioned each element circuit, general technical staff all can manufacture and design.The controllable silicon bidirectional triode thyristor is as BTA41 series.Relay can be with general A.C. contactor or novel time pulse relay, the BST series of products that as above extra large Best Co., Ltd produces.The phase voltage zero cross detection circuit can adopt conventional optocoupler zero cross detection circuit.The switch controlling signal testing circuit can adopt conventional optocoupler testing circuit.The phase controllable silicon drive circuit can be designed to various ways, for example, uses an oscillation source, drives controllable silicon by intermediate frequency transformer.The phase relay drive circuit also can be designed to various ways, and for example low power relay drives high power relay.Single-chip microcomputer can be with multiple serial commodity, for example 51 series or PIC series, and the operation of single-chip microcomputer is by the program control that is write.
Accompanying drawing 3 is three-phase low pressure composite switch circuit block diagrams of the embodiment of the invention.For better effect, present embodiment has increased main high-power components testing circuit, lack detection circuit and switch working state display circuit on the basis of accompanying drawing 1.
Accompanying drawing 4 is program flow diagrams of the embodiment of the invention.Each main frame function declaration.1, initialization.Mainly be to finish each pin of single-chip microcomputer and each register initial value are set; 2, control signal is for connecting.Require switch connection, does then detecting have phase shortage? phase shortage is then turn-offed all controllable silicons and relay, and begins the place to program; Phase shortage not, is then detecting on-state now? on state in this way, whether then detect relay all connects, if any disconnecting the part relay, illustrate that then relay has fault, close all controllable silicons and relay this moment, the demonstration fault is also waited to repair, all connect as relay, then begin the place to program; As not being the on state, then detecting load and whether connect? as not connecing, then do not throw, begin the place to program; Connect as load, then drop into the A phase relay (owing in three-phase, only throw a phase, do not form the loop, so A is mutually only with a relay, without controllable silicon), detect B phase voltage zero-crossing timing, and when zero passage, throw B phase controllable silicon, whether B phase controllable silicon detects normally controlled after dropping into, as disconnect, it is undesired then to represent, turn-offs all controllable silicons and relay this moment, and the demonstration fault is waited to repair; As on, then detect C phase voltage zero-crossing timing, and when zero passage, throw C phase controllable silicon, after C phase controllable silicon drops into, whether normally controlledly detect, as disconnect, it is undesired then to represent, turn-offs all controllable silicons and relay this moment, and the demonstration fault is waited to repair; As on, then drop into B, C phase relay, withdraw from BC phase controllable silicon, and show on-state, begin to locate to program.3, control signal is for closing, is then detecting off state? whether off state then detects three-phase and all turn-offs in this way, whether meets turn-off criterion, in this way, then begins to locate to program; Otherwise, cut out all controllable silicons and relay, begin the place to program.As not being off state, then drop into B, C phase controllable silicon, cut out the BC phase relay, turn-off controllable silicon, allow the controllable silicon current over-zero automatically shut down, after time-delay a period of time, cut out the A phase relay, and show off state, begin to locate to program.
Accompanying drawing 5 and accompanying drawing 6 are respectively the low-voltage circuit figure and the high-tension circuit figure of present embodiment.Element main in the accompanying drawing 5 is: U1 is CMOS4050, U2 is CMOS4069, U3 is the TLP521-1 optocoupler, and U4 is the P87LPC764 single-chip microcomputer of PHILIPS company, and U5 is darlington array ULN2003, U6 is 74LS32, U7 is a three terminal regulator 7805, and T2 is a power transformer, and DPDT1 and DPDT2 are dpdt relay, J1 is 16 pin lead socket, and J2 is a three-pin socket.Element main in the accompanying drawing 6 is: U1 is that TLP521-4 optocoupler TB1 is week during B phase silicon controlled drives; TC1 is week during C phase silicon controlled drives; KA1, KB1, KC1 are respectively the time pulse relay of A, B, C phase, the BST series relay that the used time pulse relay of present embodiment is produced for Shanghai Best Co., Ltd; TRIAC1, TRIAC2 are B phase bidirectional triode thyristor; TRIAC3, TRIAC4 are C phase bidirectional triode thyristor; J1 is 16 pin lead socket.Contrast accompanying drawing 3, corresponding each element of each element circuit is as follows: A phase voltage zero cross detection circuit (the main high-power components state detection circuit of zero cross signal testing circuit double as among the embodiment, be that the detection of controllable silicon and relay status, load connect not testing circuit), constitute A phase voltage zero cross detection circuit by optocoupler U1, diode D3, resistance R 8 in the resistance R in the accompanying drawing 53, U2F, diode D2, electrochemical capacitor E2, resistance R 5, U6C and the accompanying drawing 6; B phase voltage zero cross detection circuit constitutes B phase voltage zero cross detection circuit by optocoupler U1, diode D2, resistance R 7 in resistance R 2, U1C, resistance R 11, capacitor C 2, U1D, capacitor C 4, resistance R 15, diode D4 and the accompanying drawing 6 in the accompanying drawing 5; C phase voltage zero cross detection circuit constitutes C phase voltage zero cross detection circuit by optocoupler U1, diode D1, resistance R 6 in resistance R 1, U1A, resistance R 9, capacitor C 1, U1B, capacitor C 3, resistance R 14, diode D1 and the accompanying drawing 6 in the accompanying drawing 5; A phase lack detection circuit is made of diode D8, capacitor C 14, resistance R 22, resistance R 23, U6D in the accompanying drawing 5; BC phase lack detection circuit is made of optocoupler U1, diode D4, resistance R 1, capacitor C 1 in resistance R 4, U2E, diode D3, resistance R 16, electric capacity E1, U1F and the accompanying drawing 6 in the accompanying drawing 5; The switch controlling signal testing circuit is made of three-pin socket J2, resistance R 17, diode D5, U3, resistance R 13, U1E, resistance R 6, electric capacity E3 in the accompanying drawing 5; The switch working state display circuit is made of resistance R 21, light-emitting diode L2, resistance R 20, light-emitting diode L1 in the accompanying drawing 5; B phase controllable silicon drive circuit is made of the middle all TB1 in resistance R 7, U2B, capacitor C 8, U2A, capacitor C 9, resistance R 8, darlington array U5, resistance R 12, triode N1, capacitor C 5, triode N3, U6A and the accompanying drawing 6 in the accompanying drawing 5, resistance R 4, resistance R 5; C phase controllable silicon drive circuit is made of the middle all TC1 in resistance R 7, U2B, capacitor C 8, U2A, capacitor C 9, resistance R 8, darlington array U5, resistance R 10, triode N2, capacitor C 6, triode N4, U6B and the accompanying drawing 6 in the accompanying drawing 5, resistance R 2, resistance R 3; A phase relay drive circuit is made of diode D6, resistance R 19, electrochemical capacitor E4, darlington array U5, U2C, double-point double-throw switch relay DPDT1 in the accompanying drawing 5; BC phase relay drive circuit is made of diode D7, resistance R 18, electrochemical capacitor E5, darlington array U5, U2D, double-point double-throw switch relay DPDT2 in the accompanying drawing 5; B phase controllable silicon is bidirectional triode thyristor CTRIAC1, TRIAC2, as withstand voltage higher as selected controllable silicon, and also can be only with one; C phase controllable silicon is for for bidirectional triode thyristor TRIAC3, TRIAC4, and is withstand voltage higher as selected controllable silicon, also can be only with one; KA1, KB1, KC1 are respectively the time pulse relay of A, B, C phase; Single-chip microcomputer then is made of the single-chip microcomputer U4 in the accompanying drawing 5, capacitor C 10, capacitor C 11, crystal oscillator CRY1, E7; The power filter rectification circuit then is made of capacitor C 12, transformer T1, transformer T2, rectifier bridge heap RIDGE1, electrochemical capacitor E6, capacitor C 7, three-terminal voltage-stabilizing pipe U7, electrochemical capacitor E8, capacitor C 13 in the accompanying drawing 5, supplies with the cell operation that each needs DC power supply; The dynamic overvoltage protection of B phase silicon controlled is made of the resistance R in the accompanying drawing 69, capacitor C 4, resistance R 10, capacitor C 5, and is withstand voltage higher as silicon controlled, also can cancel; The dynamic overvoltage protection of C phase silicon controlled is made of resistance R 11, capacitor C 2, resistance R 12, capacitor C 3 in the accompanying drawing 6, and is withstand voltage higher as silicon controlled, also can cancel.The connecting relation of each pin is looked for along identifier and being got final product.As identifier is arranged in the accompanying drawing 5 is L1C, and then the pin that indicates the L1C place of all in the presentation graphs all is linked together.
Claims (6)
1. low-voltage composite switch the invention is characterized in: single-chip microcomputer, switching signal testing circuit that links to each other with single-chip microcomputer and the voltage zero-crossing detection circuit that links to each other with single-chip microcomputer with drive circuit, control controllable silicon drive circuit and control relay drive circuit of the controllable silicon that is connected in parallel that links to each other with low pressure and relay, control silicon controlled drive circuit, control relay.
2. a kind of low-voltage composite switch according to claim 1 is characterized by: described Single-chip Controlling program circuit is at first initialization, finishes each pin of single-chip microcomputer and each register initial value are set; Control signal requires switch connection, in this way the on state for connecting, begin the place to program, as its unaccessed state, then drop into the A phase relay, detect B phase voltage zero-crossing timing, and when zero passage, throw B phase controllable silicon, detect C phase voltage zero-crossing timing, and when zero passage, throw C phase controllable silicon, drop into B, C phase relay, withdraw from BC phase controllable silicon, begin the place to program; Control signal is for closing, the requirement switch turn-offs, and off state then begins to locate to program in this way, as not being off state, then drop into B, C phase controllable silicon, cut out the BC phase relay, turn-off controllable silicon, allow the controllable silicon current over-zero automatically shut down, after time-delay a period of time, cut out the A phase relay, begin the place to program.
3. a kind of low-voltage composite switch according to claim 1 is characterized by: the switch working state display circuit that links to each other with single-chip microcomputer also can be set.
4. a kind of low-voltage composite switch according to claim 1 is characterized by: the load that links to each other with single-chip microcomputer also can be set connect not testing circuit.
5. a kind of low-voltage composite switch according to claim 1 is characterized by: the main high-power components state detection circuit that links to each other with single-chip microcomputer also can be set.
6. a kind of low-voltage composite switch according to claim 1 is characterized by: also the lack detection circuit that links to each other with single-chip microcomputer can be set.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNA021246297A CN1466160A (en) | 2002-06-20 | 2002-06-20 | Low-voltage composite switch |
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CNA021246297A CN1466160A (en) | 2002-06-20 | 2002-06-20 | Low-voltage composite switch |
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CN1466160A true CN1466160A (en) | 2004-01-07 |
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CNA021246297A Pending CN1466160A (en) | 2002-06-20 | 2002-06-20 | Low-voltage composite switch |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101159193B (en) * | 2007-09-28 | 2010-09-08 | 珠海格力电器股份有限公司 | Control method and system for prolonging electric service life of one-phase relay and alternating current contactor |
CN102136380A (en) * | 2011-03-21 | 2011-07-27 | 齐齐哈尔齐力达电子有限公司 | Arc extinction combination switch with rectifier tube |
CN102723933A (en) * | 2011-03-30 | 2012-10-10 | 上海军远通信设备有限公司 | Alternating current combination switch |
CN104426150A (en) * | 2013-08-26 | 2015-03-18 | 深圳市华冠电气有限公司 | Single-phase heavy-current compound switch and control method thereof |
WO2015127788A1 (en) * | 2014-02-26 | 2015-09-03 | 瑞斯康微电子(深圳)有限公司 | Intelligent control switch for power line carrier |
CN104426150B (en) * | 2013-08-26 | 2016-11-30 | 深圳市华冠电气有限公司 | Single-phase big electric current combination switch and control method thereof |
CN106249673A (en) * | 2016-07-22 | 2016-12-21 | 张其发 | Voltage real-time monitoring control circuit |
WO2018090972A1 (en) * | 2016-11-17 | 2018-05-24 | 深圳市欧瑞博科技有限公司 | Contact protection circuit of relay and power supply control device containing contact protection circuit |
CN110350370A (en) * | 2019-07-17 | 2019-10-18 | 南京伊科诺电气科技有限公司 | A kind of intelligent socket and its operating passing zero method |
CN110957739A (en) * | 2019-12-16 | 2020-04-03 | 深圳市华冠电气有限公司 | Combination switch and input method thereof |
-
2002
- 2002-06-20 CN CNA021246297A patent/CN1466160A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101159193B (en) * | 2007-09-28 | 2010-09-08 | 珠海格力电器股份有限公司 | Control method and system for prolonging electric service life of one-phase relay and alternating current contactor |
CN102136380A (en) * | 2011-03-21 | 2011-07-27 | 齐齐哈尔齐力达电子有限公司 | Arc extinction combination switch with rectifier tube |
CN102723933A (en) * | 2011-03-30 | 2012-10-10 | 上海军远通信设备有限公司 | Alternating current combination switch |
CN102723933B (en) * | 2011-03-30 | 2014-08-20 | 上海军远通信设备有限公司 | Alternating current combination switch |
CN104426150A (en) * | 2013-08-26 | 2015-03-18 | 深圳市华冠电气有限公司 | Single-phase heavy-current compound switch and control method thereof |
CN104426150B (en) * | 2013-08-26 | 2016-11-30 | 深圳市华冠电气有限公司 | Single-phase big electric current combination switch and control method thereof |
WO2015127788A1 (en) * | 2014-02-26 | 2015-09-03 | 瑞斯康微电子(深圳)有限公司 | Intelligent control switch for power line carrier |
CN106249673A (en) * | 2016-07-22 | 2016-12-21 | 张其发 | Voltage real-time monitoring control circuit |
WO2018090972A1 (en) * | 2016-11-17 | 2018-05-24 | 深圳市欧瑞博科技有限公司 | Contact protection circuit of relay and power supply control device containing contact protection circuit |
CN110350370A (en) * | 2019-07-17 | 2019-10-18 | 南京伊科诺电气科技有限公司 | A kind of intelligent socket and its operating passing zero method |
CN110957739A (en) * | 2019-12-16 | 2020-04-03 | 深圳市华冠电气有限公司 | Combination switch and input method thereof |
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