CN1464537A - Dielectric material layer arrangement and process for making the same - Google Patents
Dielectric material layer arrangement and process for making the same Download PDFInfo
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- CN1464537A CN1464537A CN 02124398 CN02124398A CN1464537A CN 1464537 A CN1464537 A CN 1464537A CN 02124398 CN02124398 CN 02124398 CN 02124398 A CN02124398 A CN 02124398A CN 1464537 A CN1464537 A CN 1464537A
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Abstract
The present invention discloses a low-k dielectric material layer structure and manufacturing method thereof. The dielectric material layer structure includes: a base; a porosity dielectric material, mounted to the surface of the above base; and a compacted dielectric material, arranged on the above porosity dielectric material. The manufacturing method includes: providing a base; forming a low-k porosity dielectric material on the base, then, re-covering a layer of compacted dielectric material to the surface of porosity dielectric material. It can prevent the flaking of porosity dielectric material.
Description
Technical field
The invention relates to a kind of semiconductor structure and manufacture method thereof, particularly about a kind of structure and manufacture method thereof of dielectric materials layer.
Background technology
Along with the progress of integrated circuit technique, the element arithmetic speed has the demand that improves gradually.In circuit computing, the RC product value is the principal element that causes circuit delay.Therefore, the RC value that how to reduce circuit is the major subjects of integrated circuit manufacture process technology.At the back-end process (back-endprocess flow) of integrated circuit, reduce the dielectric constant of deposit dielectric matter, can reach the reduction parasitic capacitance, improve the purpose of circuit speed.
Be used to be used as inner metal dielectric layer (inter-metal dielectrics at present widely; IMD) material, common have a silicon dioxide (SiO
2), FSG (fluorinated SiO
2) and the black diamond (black diamond) produced of company of Applied Materials Inc.The dielectric constant of silicon dioxide is about 4.FSG is meant the fluorine doped silica, and its dielectric constant is about 3.5.The dielectric constant of black diamond then is 3.
But the semiconductor element arithmetic speed constantly improves, and dielectric constant is higher than 2.5 dielectric material and can not satisfies the demands.Therefore, the person skilled in the art proposes a kind ofly to form dielectric constant with method of spin coating (spin-on) and be lower than 2.5 advanced low-k materials, the advanced low-k materials of this class mostly is organosilane polymer, for example: HSQ (hydrogen silsequoxiane), MSQ (methyl silsequoxiane), or organic carbon hydrocarbon polymer: Silk, Flare, PAE-2, Velox, BCB etc.But; because the thermal endurance of this type of porousness dielectric material is relatively poor, therefore often in follow-up hot processing procedure, produce deformation, cause the acceptance rate of product to reduce; therefore the porousness dielectric material Inorganic Dielectric Material of can arranging in pairs or groups again usually is to remedy the heat labile shortcoming of porousness dielectric material.
Yet because porousness dielectric material and Inorganic Dielectric Material circle and only be physical property absorption, its absorption affinity is also strong inadequately, so peel off easily.Therefore and not meet complicated manufacture of semiconductor required the not good shortcoming of this absorption affinity may make next step processing procedure carry out, even cause component failure, reduce the acceptance rate of processing procedure.Therefore, how to improve the absorption affinity between low resistance porousness dielectric materials layer and the Inorganic Dielectric Material layer, be a big bottleneck that is faced at present.
On the other hand, (chemical vapor deposition CVD) is in the positive development stage low temperature chemical vapor deposition method, and this method is to utilize air and reactant gases as presoma, in order to deposition porousness dielectric material.
Yet,,, often still have the not good problem of tack to exist because it is loosely organized with the formed porousness dielectric material of low temperature chemical vapor deposition.
Summary of the invention
In order to address the above problem, main purpose of the present invention is to provide a kind of structure and manufacture method thereof of dielectric materials layer, can improve the not good problem of porousness dielectric material tack of low-k, avoids peel off (peeling) of dielectric materials layer.
One of purpose of the present invention is to provide a kind of dielectric material layer arrangement of peeling off of preventing.
For reaching above-mentioned purpose, the present invention proposes a kind of structure of dielectric materials layer, and this structure mainly comprises:
One substrate; One porousness dielectric material is arranged at above-mentioned substrate surface; And a fine and close dielectric material, be arranged on the above-mentioned porousness dielectric material.Described porousness dielectric material is provided with in the mode of exposing the substrate surface edge, and the substrate surface exposed portions serve directly contacts with close dielectric material.
Described dielectric material layer arrangement also comprises one second porousness dielectric material, make on the first fine and close dielectric material surface, and one second fine and close dielectric material, be covered on the first fine and close dielectric material surface of above-mentioned second porousness dielectric material and above-mentioned exposed portions serve.
As previously mentioned, above-mentioned porousness dielectric material and above-mentioned fine and close dielectric material all can utilize chemical vapour deposition technique (chemical vapor deposition; CVD) or method of spin coating (spin-on) form.And, above-mentioned porousness dielectric material can be made of half organosilane polymer or organic aromatic carbon hydrocarbon hydrogen polymer, and above-mentioned fine and close dielectric material can be made of one of half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond or its combination.Above-mentioned fine and close dielectric material is to be identical material with above-mentioned porousness dielectric layer material, and above-mentioned fine and close dielectric layer material imposes a densification.
Another object of the present invention is to provide a kind of manufacture method that prevents the dielectric material layer arrangement that dielectric materials layer peels off.
For achieving the above object, the present invention proposes a kind of manufacture method of dielectric materials layer, and the step of the method mainly comprises:
One substrate is provided; Form a porousness dielectric material in above-mentioned substrate surface; And form a fine and close dielectric material in above-mentioned porousness dielectric material.
Also comprise the edge of removing above-mentioned porousness dielectric material,, and the substrate surface exposed portions serve directly contacted with fine and close dielectric material up to the step of the above-mentioned substrate surface of exposed portions serve.
Also be included in the first fine and close dielectric material surface one second porousness dielectric material is set, and the second fine and close dielectric material is covered in step on the first fine and close dielectric material surface of above-mentioned second porousness dielectric material and above-mentioned exposed portions serve.
As previously mentioned, above-mentioned porousness dielectric material and above-mentioned fine and close dielectric material all can utilize chemical vapour deposition technique (chemical vapor deposition; CVD) or method of spin coating (spin-on) form.And, above-mentioned porousness dielectric material can be made of half organosilane polymer or organic aromatic carbon hydrocarbon hydrogen polymer, and above-mentioned fine and close dielectric material can be made of one of half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond or its combination.Above-mentioned fine and close dielectric material is to be identical material with above-mentioned porousness dielectric layer material, and above-mentioned fine and close dielectric layer material imposes a densification.
The present invention has following effect:
1. the fine and close dielectric material of dielectric material layer arrangement utilization of the present invention is covered in the porousness dielectric material surface, can improve the mechanical strength of dielectric layer, increases the adhesive force of dielectric layer to other materials, as: anti-reflecting layer (anti-reflection layer; And can prevent aqueous vapor (moisture) invasion and increase its corrosion stability ARC).
2. dielectric material layer arrangement of the present invention, the incidental problem of peeling off in the time of can avoiding known porousness dielectric material to pile up.
3. manufacture method of the present invention does not need to increase extra step, can not make processing procedure complicated.
Description of drawings
Figure 1A to Figure 1B is the processing procedure profile of embodiment 1 preparation dielectric materials layer;
Fig. 2 A to Fig. 2 D is the processing procedure profile of embodiment 2 preparation dielectric materials layers;
Fig. 3 is the section of structure of the dielectric materials layer that makes of embodiment 3;
Fig. 4 is the section of structure of the dielectric materials layer that makes of embodiment 4;
Fig. 5 is the section of structure of the dielectric materials layer that makes of embodiment 5.
Embodiment
Embodiment 1
Please refer to Figure 1A to Figure 1B, is a processing procedure profile that shows the preparation dielectric materials layer of the embodiment of the invention 1.
At first, please refer to Figure 1A, semiconductor substrate 10 is provided.Can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form a low-k porousness dielectric material 12 in surface, the above-mentioned semiconductor-based ends 10.The material of above-mentioned porousness dielectric material 12 is to be half organic substance or organic substance mostly, for example: half organosilane polymer (as: bydrogen silsesquioxane; HSQ, metbylsilsequioxane; MSQ), the nanoglass that produced of the SiLK that produced of Allied Signal the company FLARE, aeroge (aerogels), xerogel (xerogels), the Dow Chemical company that are produced or Nanopore company.
Then, please refer to Figure 1B, form a fine and close dielectric material 14 in above-mentioned porousness dielectric material 12 surfaces.Wherein, above-mentioned fine and close dielectric material 14 can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form, and its material can be by half organosilicon, and alkane polymer, organic aromatic carbon hydrocarbon hydrogen polymer silicon dioxide, fluorine silex glass or black diamond constitute.Above-mentioned fine and close dielectric material 14 may be with a kind of material with above-mentioned porousness dielectric material 12, passes through densification (densified) again, makes above-mentioned fine and close dielectric material 14 have character than above-mentioned porousness dielectric constant 12 densifications.Note that alleged " densification " herein, is a kind of notion of relativity, but not critical notion, that is the material of label 14 seems fine and close with respect to the material of label 12.The structure of fine and close dielectric material 14 is fine and close, so dielectric constant is higher than porousness dielectric constant 12 usually.So; just can utilize the above-mentioned porousness dielectric material 12 of above-mentioned fine and close dielectric material 14 protections; the phenomenon that makes above-mentioned porousness dielectric material 12 be not easy to peel off, but the dielectric constant of the dielectric materials layer of forming jointly by both simultaneously still Wei Te be unlikely to too high.
Present embodiment is a kind of structure that prevents that dielectric materials layer from peeling off, and its section of structure is seen Figure 1B.Above-mentioned substrate 10, its surface are provided with a porousness dielectric material 12, and be loosely organized because of it, has multiple hole, so dielectric constant values is quite low.Moreover a fine and close dielectric material 14 is arranged at above-mentioned porousness dielectric material 12 surfaces, because above-mentioned fine and close dielectric material 14 has fine and close structure, so cover on the above-mentioned porousness dielectric material 12, can prevent that above-mentioned porousness dielectric material 12 from peeling off.And, jointly form dielectric layer by above-mentioned porousness dielectric material 12 with above-mentioned fine and close dielectric material 14 according to the present invention, to compare as dielectric layer with the fine and close dielectric material of independent use, its dielectric constant values is lower.
Embodiment 2
Please refer to Fig. 2 A to the 2D figure.
At first, please refer to Fig. 2 A, semiconductor substrate 100 is provided.And, can decide on demand, utilize suitable deposition program, for example: chemical vapour deposition (CVD), form an etch stop layer 102 in surface, the above-mentioned semiconductor-based ends 100, the material of wherein above-mentioned etch stop layer 102 for example is a silicon oxynitride (SiON).
The second, please refer to Fig. 2 B, can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form a porousness dielectric material 104 in above-mentioned etch stop layer 12 surfaces.The material of above-mentioned porousness dielectric material 104 is to be half organic substance or organic substance mostly, for example: half organosilane polymer (as: hydrogen silsesquioxane; HSQ, methylsilsequioxane; MSQ), the nanoglass that produced of the SiLK that produced of Allied Sisnal the company FLARE, aeroge (aerogels), xerogel (xerogels), the Dow Chemical company that are produced or Nanopore company, because its structure is a porousness, therefore has quite low dielectric constant values usually.
The 3rd, please refer to Fig. 2 C, utilize proper procedure, for example: side washing (edge bead remove; EBR), remove the edge of above-mentioned porousness dielectric material 104,, pollute part in order to remove the edge that forms above-mentioned porousness dielectric material up to the above-mentioned etch stop layer of exposed portions serve 102 surfaces.
The 4th, please refer to Fig. 2 D, utilize proper procedure, for example: chemical vapour deposition technique or method of spin coating, compliance forms a fine and close dielectric material 106 in above-mentioned etch stop layer 102 and above-mentioned porousness dielectric material 104 surfaces, in order to comprehensive above-mentioned porousness dielectric material 104 is coated, because the compact structure of above-mentioned fine and close dielectric material 106, tack is good, can avoid porousness dielectric material 104 to come off.Above-mentioned fine and close dielectric material 106 is for example constituted by half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond.
Present embodiment is a kind of structure that prevents that dielectric materials layer from peeling off, and its section of structure is seen Fig. 2 D.Above-mentioned substrate 100 surfaces can be provided with an etch stop layer 102.Then, a porousness dielectric material 104 is arranged at above-mentioned etch stop layer 102.The area of above-mentioned porousness dielectric material 104 is less than the area of above-mentioned substrate 100, makes the above-mentioned etch stop layer of periphery exposed portions serve 102 surfaces of above-mentioned porousness dielectric material 104.
Moreover, one fine and close dielectric material 106, be arranged at above-mentioned porousness dielectric material 104 and above-mentioned etch stop layer 102 surfaces, compliance covers above-mentioned porousness dielectric material 104, that is the top surface of not only above-mentioned porousness dielectric material 104 covered by above-mentioned fine and close dielectric material 106, and the sidewall of above-mentioned porousness dielectric material 104 (side wall) part is also covered by above-mentioned fine and close dielectric material 106.Thus, above-mentioned porousness dielectric material 104 problem that is not easy to peel off.
Because above-mentioned fine and close dielectric material 106 has fine and close structure, so comprehensive covering on above-mentioned porousness dielectric material 104 and the above-mentioned etch stop layer 102 can prevent that above-mentioned porousness dielectric material 104 from peeling off.And, jointly form dielectric layer by above-mentioned porousness dielectric material 104 with above-mentioned fine and close dielectric material 106 according to the present invention, to compare as dielectric layer with the fine and close dielectric material of independent use, its dielectric constant values is lower.
As previously mentioned, according to the present invention, though in this embodiment with each simple layer porousness dielectric material and fine and close dielectric material and form dielectric layer but can decide on actual demand, porousness dielectric material and fine and close dielectric material can repeat to be provided with to be together to form dielectric layer, do not limit at this.
Embodiment 1 and the difference of embodiment 2 are that the area size of porousness dielectric material and fine and close dielectric material is consistent among the embodiment 1 in according to the present invention; fine and close dielectric material directly overlays the permeability dielectric material surface; in order to protection permeability dielectric material, prevent that it from peeling off.As for 2 of embodiment is that the area of porousness dielectric material is less than fine and close dielectric material; fine and close dielectric material compliance covers the surface of porousness dielectric material; make the porousness dielectric material not only top surface be capped; the sidewall of porousness dielectric material equally also is capped protection; make the porousness dielectric material be subjected to comprehensive protection, more difficult peeling off.
Embodiment 3
According to the present invention, embodiment 1 and embodiment 2 can look demand and merge use, repeat to be provided with porousness dielectric material and fine and close dielectric material.
Fig. 3 is an embodiment profile of multilayer dielectric layer of the present invention.It is common to the porousness dielectric material of high strength, high tenacity.Numbering 500 is substrates, and its surface is provided with one first porousness dielectric material 501.Then, one first fine and close dielectric material 502 compliances are formed at the surface of the above-mentioned first porousness dielectric material 501, in order to the above-mentioned first porousness dielectric material 501 of comprehensive covering.The follow-up porousness dielectric material 503 that is provided with again, its area equal and opposite in direction are in the above-mentioned first porousness dielectric material 501, and compliance forms one second fine and close dielectric material 504 again.Numbering 504a is the marginal portion when forming for above-mentioned second fine and close dielectric material 504 compliances, falls within the marginal portion 502a of the above-mentioned first fine and close dielectric material 502.So, repeat to be provided with one the 3rd porousness dielectric material the 505, the 3rd fine and close dielectric material 506, the 4th porousness dielectric material the 507, the 4th fine and close dielectric material 508 in regular turn, the 5th porousness dielectric material the 509, the 5th fine and close Jie, electric material 510, the 6th porousness dielectric material the 511, the 6th fine and close dielectric material 512, the 7th porousness dielectric material the 513, the 7th fine and close dielectric material 514, the 8th porousness dielectric material the 515, the 8th fine and close dielectric material 516.Wherein, the above-mentioned first porousness dielectric material 501, the above-mentioned second porousness dielectric material 503, above-mentioned the 3rd porousness dielectric material 505, above-mentioned the 4th porousness dielectric material 507, above-mentioned the 5th porousness dielectric material 509, above-mentioned the 6th porousness dielectric material 511, above-mentioned the 7th porousness dielectric material 513, the area size of above-mentioned the 8th porousness dielectric material 515 is all equal, can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form separately, its material is independent of organic aromatic carbon hydrocarbon hydrogen polymer (as: hydrogen silsesquioxane; HSQ, methylsilsequioxane, MSQ), the nanoglass that produced of the SiLK that produced of AlliedSignal the company FLARB, aeroge (aerogels), xerogel (xerogels), the Dow Chemical company that are produced or Nanopore company constitutes.And, the above-mentioned first fine and close dielectric material 502, the above-mentioned second fine and close dielectric material 504, the above-mentioned the 3rd fine and close dielectric material 506, the above-mentioned the 4th fine and close dielectric material 508, the above-mentioned the 5th fine and close dielectric material 510, the above-mentioned the 6th fine and close dielectric material 512, the above-mentioned the 7th fine and close dielectric material 514, the above-mentioned the 8th fine and close dielectric material 516 all can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form separately, and its material is independent of half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond constitute.
The marginal portion 506a of above-mentioned the 3rd fine and close dielectric material then falls within the surface of the marginal portion 504a of the above-mentioned second fine and close dielectric material, piles up the marginal portion 514a of the marginal portion 512a of the marginal portion 510a of the marginal portion 508a of above-mentioned the 4th fine and close dielectric material, above-mentioned the 5th fine and close dielectric material, above-mentioned the 6th fine and close dielectric material, above-mentioned the 7th fine and close dielectric material, the marginal portion 516a of above-mentioned the 8th fine and close dielectric material more in regular turn.
Embodiment 4
Fig. 4 is the profile of the multilayer dielectric layer of the embodiment of the invention 4.It is applicable to the medium porousness dielectric materials of material behavior such as intensity, toughness.Numbering 600 is substrates, and its surface is provided with one first porousness dielectric material 601.Then, one first fine and close dielectric material 602 compliances are formed at the surface of the above-mentioned first porousness dielectric material 601, in order to the above-mentioned first porousness dielectric material 601 of comprehensive covering.The follow-up porousness dielectric material 603 that is provided with again, its area equal and opposite in direction are in the above-mentioned first porousness dielectric material 601, and compliance forms one second fine and close dielectric material 604 again.Numbering 604a is the marginal portion when forming for above-mentioned second fine and close dielectric material 604 compliances, falls within the marginal portion 602a of the above-mentioned first fine and close dielectric material 602.Repeat to be provided with one the 3rd porousness dielectric material the 605, the 3rd fine and close dielectric material 606, the 4th porousness dielectric material the 607, the 4th fine and close dielectric material 608 so, in regular turn.Wherein, the area size of the above-mentioned first porousness dielectric material 601, the above-mentioned second porousness dielectric material 603, above-mentioned the 3rd porousness dielectric material 605, above-mentioned the 4th porousness dielectric material 607 is all equal.
Then; form one the 5th porousness dielectric material 609; the area of wherein above-mentioned the 5th porousness dielectric material 609 is less than above-mentioned the 4th porousness dielectric material 607; then; compliance forms one the 5th fine and close dielectric material 610; make above-mentioned the 5th porousness dielectric material 609 by comprehensive covering, intactly protect above-mentioned the 5th porousness dielectric material 609, peel off to prevent it.
Then, repeat to form one the 6th porousness dielectric material the 611, the 6th fine and close dielectric material 612, the 7th porousness dielectric material 613 the 8th fine and close dielectric material 616 again.Wherein, the area size of above-mentioned the 6th porousness dielectric material 611, above-mentioned the 7th porousness dielectric material 613, above-mentioned the 8th porousness dielectric material 615 is successively decreased in regular turn.Thus, all can make above-mentioned the 6th porousness dielectric material 611, above-mentioned the 7th porousness dielectric material 613, above-mentioned the 8th porousness dielectric material 615 be subjected to comprehensive covering and protection, be not easy to peel off.
The above-mentioned first porousness dielectric material 601, the above-mentioned second porousness dielectric material 603, above-mentioned the 3rd porousness dielectric material 605, above-mentioned the 4th porousness dielectric material 607, above-mentioned the 5th porousness dielectric material 609, above-mentioned the 6th porousness dielectric material 611, above-mentioned the 7th porousness dielectric material 613, above-mentioned the 8th porousness dielectric material 615 all can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form separately, and its material is independent of organosilane polymer (as: hydrogensilsesquioxane; HSQ, methylsilsequioxane; MSQ), the nanoglass that produced of the SiLK that produced of Allied Signal the company FLARE, aeroge (aerogels), xerogel (xerogels), the Dow Chemical company that are produced or Nanopore company constitutes.And, the above-mentioned first fine and close dielectric material 602, the above-mentioned second fine and close dielectric material 604, the above-mentioned the 3rd fine and close dielectric material 506, the above-mentioned the 4th fine and close dielectric material 608, the above-mentioned the 5th fine and close dielectric material 610, the above-mentioned the 6th fine and close dielectric material 612, the above-mentioned the 7th fine and close dielectric material 614, the above-mentioned the 8th fine and close dielectric material 616 all can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form, and its material is for example constituted by half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond.
The marginal portion 606a of above-mentioned the 3rd fine and close dielectric material then falls within the surface of the marginal portion 604a of the above-mentioned second fine and close dielectric material, piles up the marginal portion 614a of the marginal portion 612a of the marginal portion 610a of the marginal portion 608a of above-mentioned the 4th fine and close dielectric material, above-mentioned the 5th fine and close dielectric material, above-mentioned the 6th fine and close dielectric material, above-mentioned the 7th fine and close dielectric material, the marginal portion 616a of the above-mentioned the 8th fine and close dielectric material 616 more in regular turn.
Embodiment 5
Fig. 5 is the profile of the multilayer dielectric layer of the embodiment of the invention 5.It is applicable to the porousness dielectric material of low-intensity, low toughness.Numbering 700 is substrates, and its surface is provided with one first porousness dielectric material 701.Then, one first fine and close dielectric material 702 compliances are formed at the surface of the above-mentioned first porousness dielectric material 701, in order to the above-mentioned first porousness dielectric material 701 of comprehensive covering.The follow-up porousness dielectric material 703 that is provided with again, its area are less than the area of the above-mentioned first porousness dielectric material 701, and compliance forms one second fine and close dielectric material 704 again.Numbering 704a is the marginal portion when forming for above-mentioned second fine and close dielectric material 704 compliances, falls within the marginal portion 702a of the above-mentioned first fine and close dielectric material 702.Repeat to be provided with one the 3rd porousness dielectric material the 705, the 3rd fine and close dielectric material 706, the 4th porousness dielectric material the 707, the 4th fine and close dielectric material 708, the 5th porousness dielectric material the 709, the 5th fine and close dielectric material 710, the 6th porousness dielectric material the 711, the 6th fine and close dielectric material 712, the 7th porousness dielectric material the 713, the 7th fine and close dielectric material 714, the 8th porousness dielectric material the 715, the 8th fine and close dielectric material 716 so in regular turn.
As previously mentioned, the area size of the above-mentioned first porousness dielectric material 701, the second porousness dielectric material 703, the 3rd porousness dielectric material 705, the 4th porousness dielectric material 707, the 5th porousness dielectric, material 709, the 6th porousness dielectric material 711, above-mentioned the 7th porousness dielectric material 718, above-mentioned the 8th porousness dielectric material 715 is successively decreased in regular turn.Thus, all can make each layer porousness dielectric material 7 be subjected to comprehensive covering and protection, be not easy to peel off.Porous material according to present embodiment of the present invention is subjected to complete preservation, and whole dielectric materials layer peels off least easily.
The above-mentioned first porousness dielectric material 701, the above-mentioned second porousness dielectric material 703, above-mentioned the 3rd porousness dielectric material 705, above-mentioned the 4th porousness dielectric material 707, above-mentioned the 5th porousness dielectric material 709, above-mentioned the 6th porousness dielectric material 711, above-mentioned the 7th porousness dielectric material 713, above-mentioned the 8th porousness dielectric material 715 all can utilize chemical vapour deposition technique (CVD) or method of spin coating (spin-on) to form, and its material is independent of half organosilane polymer (as: hydrogensilsesquioxane; HSQ, metbylsilsequioxane; MSQ), the nanoglass that produced of the SiLK that produced of Allied Signal the company FLARE, aeroge (aerogels), xerogel (xerogels), the Dow Chehcal company that are produced or Nanopore company constitutes.And, the above-mentioned first fine and close dielectric material 702, the above-mentioned second fine and close dielectric material 704, the above-mentioned the 3rd fine and close dielectric material 706, the above-mentioned the 4th fine and close dielectric material 708, the above-mentioned the 5th fine and close dielectric material 710, the above-mentioned the 6th fine and close dielectric material 712, the above-mentioned the 7th fine and close dielectric material 714, the above-mentioned the 8th fine and close dielectric material 717 all can utilize chemical vapour deposition (CVD), method (CVD) or method of spin coating (spin-on) to form, and its material is for example constituted by half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond.
The marginal portion 706a of above-mentioned the 3rd fine and close dielectric material then falls within the surface of the marginal portion 704a of the above-mentioned second fine and close dielectric material, piles up the marginal portion 714a of the marginal portion 712a of the marginal portion 710a of the marginal portion 708a of above-mentioned the 4th fine and close dielectric material, above-mentioned the 5th fine and close dielectric material, above-mentioned the 6th fine and close dielectric material, above-mentioned the 7th fine and close dielectric material, the marginal portion 716a of the above-mentioned the 8th fine and close dielectric material 716 more in regular turn.
Claims (12)
1, a kind of dielectric material layer arrangement comprises:
One substrate;
One porousness dielectric material is arranged at above-mentioned substrate surface; It is characterized in that also comprising:
One fine and close dielectric material is arranged on the above-mentioned porousness dielectric material.
2, dielectric material layer arrangement as claimed in claim 1 is characterized in that described porousness dielectric material is provided with in the mode of exposing the substrate surface edge, and the substrate surface exposed portions serve directly contacts with close dielectric material.
3, dielectric material layer arrangement as claimed in claim 2, it is characterized in that described dielectric material layer arrangement also comprises one second porousness dielectric material, make on the first fine and close dielectric material surface, and one second fine and close dielectric material, be covered on the first fine and close dielectric material surface of above-mentioned second porousness dielectric material and above-mentioned exposed portions serve.
4,, it is characterized in that described fine and close dielectric material is to utilize chemical vapour deposition technique or method of spin coating to form as the described dielectric material layer arrangement of claim 1,2 or 3.
5,, it is characterized in that described fine and close dielectric material comprises that half organosilicon burns one of polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond or its combination as the described dielectric material layer arrangement of claim 1,2 or 3.
6,, it is characterized in that described fine and close dielectric material is identical material with described porousness dielectric layer material, and described fine and close dielectric material imposes a densification as the described dielectric material layer arrangement of claim 1,2 or 3.
7, a kind of method for preparing the described dielectric material layer arrangement of claim 1 comprises the steps:
One substrate is provided;
Form a porousness dielectric material in above-mentioned substrate surface; It is characterized in that, also comprise
Form the step that a fine and close dielectric material is covered in above-mentioned porousness dielectric material.
8, the manufacture method of dielectric material layer arrangement as claimed in claim 7, it is characterized in that, also comprise the edge of removing above-mentioned porousness dielectric material,, and the substrate surface exposed portions serve directly contacted with fine and close dielectric material up to the step of the above-mentioned substrate surface of exposed portions serve.
9, the manufacture method of dielectric material layer arrangement as claimed in claim 8, it is characterized in that, also be included in the first fine and close dielectric material surface one second porousness dielectric material is set, and the second fine and close dielectric material is covered in step on the first fine and close dielectric material surface of above-mentioned second porousness dielectric material and above-mentioned exposed portions serve.
10,, it is characterized in that described fine and close dielectric material is to utilize chemical vapour deposition technique or method of spin coating to form as the manufacture method of the described dielectric material layer arrangement of claim 7,8 or 9.
11, as claim 7, the manufacture method of 8 or 9 described dielectric material layer arrangements is characterized in that described fine and close dielectric material comprises one of half organosilane polymer, organic aromatic carbon hydrocarbon hydrogen polymer, silicon dioxide, fluorine silex glass or black diamond or its combination.
12,, it is characterized in that described fine and close dielectric material and above-mentioned porousness dielectric material are to be identical material, and above-mentioned fine and close dielectric layer material imposes a densification as the manufacture method of the described dielectric material layer arrangement of claim 7,8 or 9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024790B (en) * | 2009-09-22 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method, and integrated circuit and electronic equipment including the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024790B (en) * | 2009-09-22 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method, and integrated circuit and electronic equipment including the same |
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| Publication number | Publication date |
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| CN1217389C (en) | 2005-08-31 |
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