CN1459836A - Chemical mechanical grinding process of tungsten metal capable of reducing scrape - Google Patents
Chemical mechanical grinding process of tungsten metal capable of reducing scrape Download PDFInfo
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- CN1459836A CN1459836A CN 02120608 CN02120608A CN1459836A CN 1459836 A CN1459836 A CN 1459836A CN 02120608 CN02120608 CN 02120608 CN 02120608 A CN02120608 A CN 02120608A CN 1459836 A CN1459836 A CN 1459836A
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Abstract
A chemicomechanical grinding process for decreasing the microscratch on tungsten layer covering on a dielectric layer and filled in the windows on dielectric layer which is on an electric conducting layer generated on a semiconductor substrate features that in the first half process, the standard grinding slurry is used and in the second half process the oxide slurry is used for grinding.
Description
Technical field
The invention relates to that (hemical-mechanical polishing, CMP) processing procedure are particularly to a kind of cmp processing procedure that the tungsten metal level is carried out to a kind of cmp, can reduce the generation of scratches.
Background technology
In manufacture of semiconductor, as: super large integrated circuit (VLSI) or very big integrated circuit (ULSI) processing procedure, in order to ensure the accuracy of carrying out micro-photographing process on high density assembly, the degree that has an even surface of sedimentary deposit becomes a considerable factor.Especially work as manufacture of semiconductor and be developed to the 0.5micron stage, (chemical-mechanical polishing, CMP) method becomes a major technique that the comprehensive planarization of VLSI or ULSI processing procedure can be provided to cmp.
The CMP method often is applied to the isostructural planarization processing procedure of intraconnections, interlayer hole connector or contact plunger of tungsten metal.In the CMP of tungsten metal processing procedure, the tungsten metal level is selected therefore can allow overmastication, and can obtain smooth tungsten plug than high with the grinding rate of dielectric layer.But, in process of lapping, easily produce some wafer defects, as: scratches, this can cause the interior situation that produces short circuit or open circuit of plug structure of interior metal and dielectric (IMD) layer.Conventional art is in order to solve the problem of this scratches, is the various new abrasive grains of exploitation, and this abrasive grains is mixed to suspending agent, the slurry material that makes new advances with making, however do not see yet that so far it effectively improves the scratches phenomenon of CMP processing procedure.
Fig. 1-Fig. 4 is the generalized section of the CMP processing procedure of conventional tungsten metal.At first, as shown in Figure 1, provide semiconductor substrate 10, it includes: most first conductive layers 12 are that definition is formed on the surface at the semiconductor-based end 10, and be to be deposited on the surface at the semiconductor-based end 10 by the dielectric layer 14 that the silica material constitutes, to cover first conductive layer 12.Then, as shown in Figure 2, carry out little shadow and anisotropic dry ecthing procedure, form most interlayer hole structures 16 in dielectric layer 14, it can expose the surface of each first conductive layer 12 respectively.Then, as shown in Figure 3, go up second conductive layer 18 that deposition is made of the tungsten metal material in dielectric layer 14 surfaces, and make second conductive layer 18 fill up each interlayer hole structure 16, until arriving predetermined thickness.At last, as shown in Figure 4, utilize the CMP method that second conductive layer 18 is carried out etch-back, can remove interlayer hole structure 16 second conductive layer 18 in addition, and can make second conductive layer 18 obtain smooth surface.Thus, second conductive layer 18 that retains in interlayer hole structure 16 is to be used as a tungsten plug 19.Its major defect is:
In the CMP processing procedure of above-mentioned tungsten metal, include the tripoli of colloid in the employed slurry or be KOH, the NH of dispergated alum clay and alkali
4OH solution mixes, and the abrasive grains in the slurry can produce reagentia with the surface of dielectric layer 14, and then the situation of scratches takes place on lapped face.Therefore, the follow-up tungsten metal that is embedded in the dielectric layer 14 easily produces the problem of short circuit, open circuit or high leakage current; In addition, the situation of overmastication taking place in the CMP of tungsten metal processing procedure, the dielectric layer 14 of part can be removed, then can cause problems such as oxidation material burn into tungsten plug 19 depressions.
Tradition solves one of method of scratches, is a kind of flexible abrasive slurries that do not contain abrasive grains of research and development, for example: the synthetic of soft tripoli glue class.Yet, use the flexible abrasive slurry to suffer to grind that the uniformity is not good, output reduces, the processing procedure cost increases and problem such as operating difficulties.
Two of the method for tradition solution scratches, be operating parameter or the operating procedure of adjusting the CMP processing procedure, as: grinding rate, time, direction etc., but has complicated relevance between these process parameter, and by about grinding environment institute on every side, if will find out the direct correlation of setting with the board hardware, the problem of its experiment difficulty and measuring equipment both expensive is arranged.
Summary of the invention
The objective of the invention is to propose a kind of cmp processing procedure that reduces the tungsten metal of scratches, by using the oxide slurry, overcome the defective of conventional art, can effectively reduce the scratches quantity on dielectric layer surface, avoid producing in the assembly situation that opens circuit, prevent to produce between the metal interconnecting problem of high leakage current, reach the purpose of the electrical quality of guaranteeing semiconductor subassembly.
The object of the present invention is achieved like this: a kind of cmp processing procedure that reduces the tungsten metal of scratches, it is characterized in that: it comprises the following steps:
The semiconductor substrate is provided, and it includes an at least one tungsten plug and an inner metal dielectric layer;
The leading portion of the cmp processing procedure of tungsten metal grinds, and is employing standard tungsten slurry, carries out on the lapped face of this tungsten plug and this dielectric layer;
The back segment of the cmp processing procedure of tungsten metal grinds, and is to adopt the monoxide slurry, carries out on the lapped face of this tungsten plug and this dielectric layer.
The leading portion of the cmp processing procedure of this tungsten metal grinds the grinding effect that provides standard tungsten slurry.This standard tungsten slurry is an acid compound.This oxide slurry provides the oxidation buffer effect.This oxide slurry is the alkali material.This semiconductor-based end, include:
First conductive layer is that definition is formed on the surface at this semiconductor-based end, and is covered by this dielectric layer;
The interlayer hole structure is to pass through this dielectric layer and the surface of this first conductive layer is exposed;
The tungsten metal level is to be formed on this dielectric layer and to fill up this interlayer hole structure, and this tungsten metal level that wherein retains in this interlayer hole structure is to be used as this tungsten plug.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Description of drawings
Fig. 1-Fig. 4 is the generalized section of the CMP processing procedure of conventional tungsten metal.
Fig. 5-Figure 11 is the generalized section of tungsten metal CMP processing procedure of the present invention.
Embodiment
Consult Fig. 5-shown in Figure 11, tungsten metal CMP processing procedure of the present invention comprises the steps:
Consult shown in Figure 5ly, semiconductor substrate 20 is provided, it includes most first conductive layers 22, be that definition is formed on the surface at the semiconductor-based end 20, and by the dielectric layer 24 that the silica material constitutes, be to be deposited on the surface at the semiconductor-based end 20, to cover first conductive layer 22.
Then, consult shown in Figure 6ly, carry out little shadow and anisotropic dry ecthing procedure, form most interlayer hole structures 26 in dielectric layer 24, it can expose the surface of each first conductive layer 22 respectively.
Then, consult shown in Figure 7ly, go up deposition by tungsten metal level 28 in dielectric layer 24 surface, and make tungsten metal level 28 fill up each interlayer hole structure 26, until arriving a predetermined thickness.
Follow-up, consult shown in Figure 8ly, tungsten metal level 28 is carried out etch-back, can use the CMP processing procedure of tungsten metal of the present invention, the apparent height of tungsten metal level 28 with dielectric layer 24 trimmed, the tungsten metal levels 28 that then remain in the interlayer hole structure 26 are as a tungsten plug 29.In the leading portion process of lapping of the CMP of tungsten metal of the present invention processing procedure, be to use acid standard tungsten slurry, it includes SiO
2, H
2O
2, WO
xAnd other chemical composition, can have the grinding effect, but still can on dielectric layer 24 surfaces, produce the scratches phenomenon.In order to relax the extent of injury of abradant surface, the back segment process of lapping of the CMP processing procedure of tungsten metal of the present invention is to change to adopt the oxidation buffer processing procedure.As shown in Figure 9, in the leading portion process of lapping of CMP processing procedure, be the oxide slurry 30 that an alkali is provided, or be called fusion (fuse) film that it includes NH on lapped face
4OH can reduce the quantity of the scratches that produces in the CMP processing procedure.
Subsequently, as shown in figure 10, when oxide slurry 30 was removed fully, the height of dielectric layer 24 also can reduce, and made tungsten plug 29 protrude in the surface of dielectric layer 24.
At last, as shown in figure 11, definition forms second conductive layer 32 on the surface at the semiconductor-based end 20, and it can form by tungsten plug 29 and with first conductive layer 22 and be electrically connected.
Compared to conventional art, the CMP processing procedure of tungsten metal of the present invention is to use oxide slurry 30 in the back segment process of lapping, can effectively reduce the scratches quantity on dielectric layer 24 surfaces.So can avoid producing the situation that opens circuit in the assembly, and can prevent to produce between the metal interconnecting problem of high leakage current, and then guarantee the electrical quality of semiconductor subassembly.And oxide slurry 30 is only used in the back segment process of lapping, therefore can keep use standard tungsten slurry in the leading portion process of lapping, and new material or step need be provided.Also therefore, the CMP processing procedure of tungsten metal of the present invention control is simple, can effectively improve productive rate "
Though the present invention discloses as above with preferred embodiment, so it is not in order to limiting the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, a little change and the retouching done all belongs within protection scope of the present invention,
Claims (6)
1, a kind of cmp processing procedure that reduces the tungsten metal of scratches, it is characterized in that: it comprises the following steps:
The semiconductor substrate is provided, and it includes an at least one tungsten plug and an inner metal dielectric layer;
The leading portion of the cmp processing procedure of tungsten metal grinds, and is employing standard tungsten slurry, carries out on the lapped face of this tungsten plug and this dielectric layer;
The back segment of the cmp processing procedure of tungsten metal grinds, and is to adopt the monoxide slurry, carries out on the lapped face of this tungsten plug and this dielectric layer.
2, the cmp processing procedure that reduces the tungsten metal of scratches according to claim 1 is characterized in that: the leading portion of the cmp processing procedure of this tungsten metal grinds the grinding effect that provides standard tungsten slurry.
3, the cmp processing procedure that reduces the tungsten metal of scratches according to claim 1 is characterized in that: this standard tungsten slurry is an acid compound.
4, the cmp processing procedure that reduces the tungsten metal of scratches according to claim 1, it is characterized in that: this oxide slurry provides the oxidation buffer effect.
5, the cmp processing procedure that reduces the tungsten metal of scratches according to claim 1, it is characterized in that: this oxide slurry is the alkali material.
6, the cmp processing procedure that reduces the tungsten metal of scratches according to claim 1, it is characterized in that: this semiconductor-based end, include:
First conductive layer is that definition is formed on the surface at this semiconductor-based end, and is covered by this dielectric layer;
The interlayer hole structure is to pass through this dielectric layer and the surface of this first conductive layer is exposed;
The tungsten metal level is to be formed on this dielectric layer and to fill up this interlayer hole structure, and this tungsten metal level that wherein retains in this interlayer hole structure is to be used as this tungsten plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02120608 CN1210772C (en) | 2002-05-23 | 2002-05-23 | Chemical mechanical grinding process of tungsten metal capable of reducing scrape |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02120608 CN1210772C (en) | 2002-05-23 | 2002-05-23 | Chemical mechanical grinding process of tungsten metal capable of reducing scrape |
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| CN1459836A true CN1459836A (en) | 2003-12-03 |
| CN1210772C CN1210772C (en) | 2005-07-13 |
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|---|---|---|---|
| CN 02120608 Expired - Lifetime CN1210772C (en) | 2002-05-23 | 2002-05-23 | Chemical mechanical grinding process of tungsten metal capable of reducing scrape |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452911B (en) * | 2007-11-30 | 2010-10-27 | 中芯国际集成电路制造(上海)有限公司 | Test construction for detecting W plug chemical mechanical polishing process |
| CN102110641A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for overcoming tungsten plug sagging shortcoming during chemical-mechanical polishing process |
| CN101752206B (en) * | 2008-12-01 | 2011-09-07 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding particle residue |
| CN103515296A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Method for planarization of conductive plug |
| CN103972083A (en) * | 2014-05-26 | 2014-08-06 | 武汉新芯集成电路制造有限公司 | Manufacturing process for metal tip structures on wafer surface |
| CN104308720A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Grinding head washing device, grinding equipment and washing method |
| CN112259454A (en) * | 2019-07-22 | 2021-01-22 | 华邦电子股份有限公司 | Chemical mechanical polishing process |
-
2002
- 2002-05-23 CN CN 02120608 patent/CN1210772C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452911B (en) * | 2007-11-30 | 2010-10-27 | 中芯国际集成电路制造(上海)有限公司 | Test construction for detecting W plug chemical mechanical polishing process |
| CN101752206B (en) * | 2008-12-01 | 2011-09-07 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding particle residue |
| CN102110641A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for overcoming tungsten plug sagging shortcoming during chemical-mechanical polishing process |
| CN103515296A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Method for planarization of conductive plug |
| CN103515296B (en) * | 2012-06-26 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | The method of planarization of conductive plug |
| CN103972083A (en) * | 2014-05-26 | 2014-08-06 | 武汉新芯集成电路制造有限公司 | Manufacturing process for metal tip structures on wafer surface |
| CN104308720A (en) * | 2014-08-27 | 2015-01-28 | 上海华力微电子有限公司 | Grinding head washing device, grinding equipment and washing method |
| CN112259454A (en) * | 2019-07-22 | 2021-01-22 | 华邦电子股份有限公司 | Chemical mechanical polishing process |
| CN112259454B (en) * | 2019-07-22 | 2024-04-12 | 华邦电子股份有限公司 | Chemical mechanical polishing process |
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| Publication number | Publication date |
|---|---|
| CN1210772C (en) | 2005-07-13 |
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