CN1459656A - Active type organic electroluminous display and its making method - Google Patents
Active type organic electroluminous display and its making method Download PDFInfo
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- CN1459656A CN1459656A CN02120294A CN02120294A CN1459656A CN 1459656 A CN1459656 A CN 1459656A CN 02120294 A CN02120294 A CN 02120294A CN 02120294 A CN02120294 A CN 02120294A CN 1459656 A CN1459656 A CN 1459656A
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Abstract
An active organic electroluminescent display is disclosed. Its each pixel region has at least two non-crystal silicon TFT elements whose channel is formed by one non-crystal silicon layer, a display region formed by an electrically conducting transparent layer, and a light mask layer to cover the region outside the display region for electric isolation and protection purposes.
Description
Technical field
The present invention relates to a kind of is the active system organic electroluminescent display (AM-OLED) of driving element with amorphous silicon film transistor (a-Si:H TFT), be particularly related to a kind of AM-OLED with light masking structure, parasitic OLED beyond can electric isolate pixels zone, and the maskable amorphous silicon layer is to prevent by follow-up process of surface treatment damage.
Background technology
Display of organic electroluminescence (Organic Electroluminescence Device; Organic LightEmitting Diode, hereinafter to be referred as OLED), can be distinguished into active (activematrix) and two kinds of passive types according to its type of drive, wherein active system organic electroluminescent display (hereinafter to be referred as AM-OLED) is with current drives, each pixel will have a switching thin-film transistor (switch TFT) at least, enters the usefulness of storage switch and addressing as view data; Need a drive thin film transistors (drivingTFT) in addition,, promptly control the bright difference that reaches GTG of pixel according to the size that the difference of electric capacity stored voltage is regulated drive current.Present active type of drive has two TFT type of drive of use and four TFT type of drive.
Generally speaking, the principle of luminosity of AM-OLED is to apply electric current so that electric energy converts luminous energy at specific organic film lamination, it has advantages such as the feature of the luminous thin thickness of face, light weight and self luminous high-luminous-efficiency, low driving voltage, and has the characteristic of wide, the high contrast in visual angle, high response speed, full-colorization and deflection.In the making as for the TFT element, then be amorphous silicon (amorphous silicon, TFT technology a-Si:H) that adopts LCD.See also Fig. 1, it shows the vertical view of the AM-OLED of existing non-crystalline silicon tft.With the AM-OLED that adopts two non-crystalline silicon tfts is example, and it includes the pixel region 10 of a plurality of arrays, by the data line 12 that extends along the Y direction and the source electrode line that extends along directions X (source line or claim V
DdLine) 14 formations.In each pixel region 10, include two sweep traces that extend along directions X 16, two non-crystalline silicon tft elements 18, a viewing area that transparency electrode constituted 20 and a capacitor 22 by rectangle.
See also Fig. 2 A, it is the diagrammatic cross-section that shows existing non-crystalline silicon tft element 18 along the tangent line A-A of Fig. 1.Below with the technology of the existing non-crystalline silicon tft element 18 of the method for making of etch-stop pattern (etching stopper type) explanation.At first, on a transparent substrates 30 surfaces, form a first metal layer, again the first metal layer definition is formed the figure of the bottom electrode of source electrode line 14, sweep trace 16 and capacitor 22.Then, on the surface of transparent substrates 30, form one first insulation course 32, one second insulation course 34 and an amorphous silicon (a-Si:H) layer 36 in regular turn, utilize the photoengraving lithography that part second insulation course 34 and amorphous silicon layer 36 are removed again, so that the presumptive area of non-crystalline silicon tft element 18 definition forms an island structure, be to remove fully as for second insulation course 34 and 36 of the amorphous silicon layers of source electrode line 14 tops.Then, definition forms an etch stop layer 38 above the pre-defined gate zone of island structure.Subsequently, on the whole surface of transparent substrates 30, form a doped amorphous silicon layer 40 and one second metal level 42 in regular turn, utilize the photoengraving lithography that the part doped amorphous silicon layer 40 and second metal level 42 are removed again, figure with the second metal level 42 definition formation top electrode of data line 12 and capacitor 22, and simultaneously the doped amorphous silicon layer 40 and second metal level 42 are retained on the surface of island structure, be to remove fully as for the doped amorphous silicon layer 40 and 42 of second metal levels of source electrode line 14 tops.And then, utilize the photoengraving carving technology, top, pre-defined gate zone definition in island structure forms an opening, second metal level 42 is distinguished become source electrode (42A or 42B), doped amorphous silicon layer 40 is distinguished becomes source diffusion region (40A or 40B), is intended for a raceway groove as for amorphous silicon layer 36.
Next; on the whole surface of transparent substrates 30, form a protective seam 44; utilize the photoengraving carving technology in protective seam 44, to form one first through hole 45I, one second through hole 45II and a third through-hole 45III at least again; wherein the first through hole 45I and the second through hole 45II make and expose near second metal level 42 of source/drain electrodes (42A or 42B) respectively, and third through-hole 45III then passes first insulation course 32 to expose the subregion of source electrode line 14.Thereafter, definition formation one has the figure of tin indium oxide (ITO) layer 46 of electrically conducting transparent effect on the surface of transparent substrates 30, constituting rectangular display area 20, and cover the exposed region of the first through hole 45I, the second through hole 45II and third through-hole 45III, so that the electrical connection effect to be provided.
See also Fig. 2 B, it is the diagrammatic cross-section that shows existing parasitic OLED along the tangent line A-A of Fig. 1.After above-mentioned non-crystalline silicon tft element 18 is finished, before carrying out evaporation process, need carry out the surface treatment program earlier, deposit an organic/polymer luminous material layer 47 and a cathodic metal layer 48 more in regular turn, just roughly finished the technology of AM-OLED.Yet, in existing process for treating surface, adopt ultraviolet and ozone (UV/O usually
3) or O
2The surface clean technology of plasma, and the UV light in the surface clean technology can damage amorphous silicon layer 36, and then cause the problem that threshold voltage (threshold voltage) increases or leakage current (leakage current) increases.For general TFT-LCD technology, can after the UV cleaning, carry out annealing in process, it can repair the damaged structure on surface, to address the above problem, but for the OLED technology of non-crystalline silicon tft, for fear of the restriction of follow-up evaporation organic/polymer material layer 47, can't provide this road annealing in process to solve the impaired problem of amorphous silicon layer 36.
In addition, for the non-crystalline silicon tft technology of existing five road masks, the figure of ITO layer 46 not only is applied in the viewing area 20, also must provide as the bridge that is electrically connected between second metal level and second metal level or between second metal level and the first metal layer, yet this but can cause forming a parasitic OLED zone 49 the ITO layer 46 beyond the viewing area 20, this parasitic OLED zone 49 also can produce luminescence phenomenon, and then causes unnecessary power consumption and vision to disturb.
Summary of the invention
Therefore, fundamental purpose of the present invention is to provide a kind of AM-OLED with light masking structure, this light masking structure covers the area beyond the viewing area, the maskable amorphous silicon layer to be preventing the damage of follow-up electricity or UV light cleaning, and can isolate stray capacitance to guarantee the luminescent quality of AM-OLED.
The present invention then provides a kind of active system organic electroluminescent display, includes in each pixel region: at least two non-crystalline silicon tft elements, and the raceway groove of non-crystalline silicon tft element is made of an amorphous silicon layer; One viewing area is made of a transparency conducting layer; And a light shield layer, be covered on the zone beyond the viewing area, its parasitic OLED beyond can electric isolate pixels zone, and the maskable amorphous silicon layer is damaged by follow-up process of surface treatment preventing.
According to above-mentioned purpose, one of the present invention is characterised in that a smooth masking structure is provided, and the maskable amorphous silicon layer to be preventing it by UV light or plasma damage in the follow-up surface clean technology, and then improves the problem that existing threshold voltage increases or leakage current increases.
Another feature of the present invention is to provide a smooth masking structure, can isolate parasitic OLED zone, therefore can effectively avoid parasitic OLED zone to produce luminescence phenomenon, and then reduces unnecessary power consumption and vision interference.
Description of drawings
Fig. 1 shows the vertical view of the AM-OLED of existing non-crystalline silicon tft;
Fig. 2 A is the diagrammatic cross-section along the existing non-crystalline silicon tft element of tangent line A-A ' demonstration of Fig. 1;
Fig. 2 B is the diagrammatic cross-section along the existing parasitic OLED of tangent line A-A ' demonstration of Fig. 1;
Fig. 3 A to 3F is the vertical view that shows the AM-OLED process of non-crystalline silicon tft of the present invention;
Fig. 4 A to 4G is the diagrammatic cross-section along the AM-OLED process of the tangent line B-B ' demonstration non-crystalline silicon tft of the present invention of Fig. 3; And
Fig. 5 A to 5G is the diagrammatic cross-section along the AM-OLED process of the tangent line C-C ' demonstration non-crystalline silicon tft of the present invention of Fig. 3.
Description of reference numerals in the accompanying drawing is as follows:
Prior art:
Pixel region～10; Data line～12; Source electrode line～14; Sweep trace～16; Non-crystalline silicon tft element～18; Viewing area～20; Capacitor～22; Transparent substrates～30; First insulation course～32; Second insulation course～34; Amorphous silicon layer～36; Etch stop layer～38; Doped amorphous silicon layer～40; Second metal level～42; Protective seam～44; First through hole～45I; Second through hole～45II; Third through-hole～45III; ITO layer～46; Organic/polymer luminous material layer～47; Cathodic metal layer～48; Parasitic OLED zone～49.
The technology of the present invention:
Transparent substrates～50; The first metal layer～52; Source electrode line～52S; First sweep trace～52I; Second sweep trace～52II; Electrode～52C under the capacitor; First insulation course～54; Second insulation course～55; Amorphous silicon layer～56; First through hole～57I; Etch stop layer～58; Doped amorphous silicon layer～60; Second metal level～62; Data line～62D; Electrode～62C on the capacitor; Opening～63I, 63II; Protective seam～64; Second through hole～57II; Third through-hole～57III; Fourth hole～57IV; Fifth hole～57V; Transparency conducting layer～66; Viewing area～66P; Light shield layer～68; Parasitic OLED zone～69; Organic/polymer luminous material layer～70; Cathodic metal layer～72; First non-crystalline silicon tft element～TFT1; Second non-crystalline silicon tft element～TFT2.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below:
Embodiment
The invention provides a kind of is the active system organic electroluminescent display (AM-OLED) of driving element with amorphous silicon film transistor (a-Si:H TFT), has a smooth masking structure on its transparency conducting layer, parasitic OLED beyond can electric isolate pixels zone, and be provided with shielding the damage that OLED technology was produced in follow-up minute.
With the AM-OLED that adopts two non-crystalline silicon tfts is example, and it includes the pixel region of a plurality of arrays, by the data line that extends along the Y direction and the source electrode line that extends along directions X (source line or claim V
DdLine) constitute.In each pixel region, include two sweep trace, two non-crystalline silicon tft elements, a viewing area and capacitors that constituted by the rectangle transparency electrode that extend along directions X.The method for making of general non-crystalline silicon tft structure, the method for making that can be divided into etch-stop type (etchingstopper type) and end channel-type (back channel type) below illustrates the AM-OLED of non-crystalline silicon tft of the present invention with the method for making of etch-stop type.
Fig. 3 A to 3F is the vertical view that shows the AM-OLED process of non-crystalline silicon tft of the present invention.Fig. 4 A to 4G is the diagrammatic cross-section along the AM-OLED process of the tangent line B-B ' demonstration non-crystalline silicon tft of the present invention of Fig. 3.Fig. 5 A to 5G is the diagrammatic cross-section along the AM-OLED process of the tangent line C-C ' demonstration non-crystalline silicon tft of the present invention of Fig. 3.
At first, shown in Fig. 3 A, 4A and 5A, on a transparent substrates 50 surfaces, form a first metal layer 52, again the first metal layer definition is formed the figure of the bottom electrode 52C of the second sweep trace 52II that the first sweep trace 52I that a source electrode line 52S who extends along directions X, extends along directions X, extends along directions X and a capacitor.Then, shown in Fig. 3 B, 4B and 5B, form one first insulation course 54, one second insulation course 55 and an amorphous silicon layer 56 in regular turn on the surface of transparent substrates 30, wherein the material of first insulation course 54 can be selected SiO for use
2, SiN, SiON, the material of second insulation course 55 can be selected SiO for use
2, SiN, SiON.Utilize the photoengraving lithography that part second insulation course 55 and amorphous silicon layer 56 are removed again, can be respectively on the presumptive area of the non-crystalline silicon tft element of the first sweep trace 52I and the second sweep trace 52II definition form an island structure, second insulation course 55 and 56 of amorphous silicon layers as for source electrode line 52S top are to remove fully, and pass first insulation course 54 to form one first through hole 57I, in order to expose the subregion of source electrode line 52S.Then, top, the pre-defined gate zone definition in island structure forms an etch stop layer 58.
Shown in Fig. 3 C, 4C and 5C, on the whole surface of transparent substrates 50, form a doped amorphous silicon layer 60 and one second metal level 62 in regular turn, wherein doped amorphous silicon layer 60 can use n
+The doped amorphous silicon material.Then, utilize the photoengraving lithography that the part doped amorphous silicon layer 60 and second metal level 62 are removed, then the definition of second metal level 62 can be formed the figure of the top electrode 62C of a data line 62D who extends along the Y direction and a capacitor, and the doped amorphous silicon layer 60 and second metal level 62 can be retained on the surface of island structure simultaneously, be to remove fully as for doped amorphous silicon layer 60 and 62 of second metal levels above the source electrode line 52S.And then, utilize the photoengraving carving technology, top, pre-defined gate zone definition in island structure forms an opening 63I and a 63II, second metal level 62 is distinguished become source electrode (62A or 62B), doped amorphous silicon layer 60 is distinguished become source diffusion region (60A or 60B), be used as a raceway groove as for 56 of amorphous silicon layers, so just roughly finish the first non-crystalline silicon tft element (TFT1) and the second non-crystalline silicon tft element (TFT2).
Shown in Fig. 3 D, 4D and 5D; on the whole surface of transparent substrates 50, form a protective seam 64; in protective seam 64, form one second through hole 57II, a third through-hole 57III, a fourth hole 57IV and a fifth hole 57V at least with the photoengraving carving technology again, and expose the first through hole 57I simultaneously.Wherein, the second through hole 57II and third through-hole 57III expose near second metal level 62 of source/drain electrodes (62A or 62B) of the second non-crystalline silicon tft element (TFT2) respectively, fourth hole 57IV exposes the end of the second sweep trace 52II, then exposes the part zone of the top electrode 62C of capacitor as for fifth hole 57V.
Shown in Fig. 3 E, 4E and 5E, definition formation one has the figure of transparency conducting layer 66 on the surface of transparent substrates 50, can use the ITO material, to constitute rectangular display area 66P, to cover the exposed region of the first through hole 57I, the second through hole 57II, third through-hole 57III, fourth hole 57IV and fifth hole 57V, then be electrically connected effect between the first transparency conducting layer 66I top electrode 62C that capacitor can be provided and the second sweep trace 52II, and the second transparency conducting layer 66II can provide the effect that is electrically connected between source electrode line 52S and the second sweep trace 52II.
Shown in Fig. 3 F, 4F and 5F, definition forms a light shield layer 68 on the whole surface of transparent substrates 50, it covers the first transparency conducting layer 66I and the second transparency conducting layer 66II at least, but need to expose viewing area 66P, light shield layer 68 maskable amorphous silicon layers 56 then, and isolate parasitic OLED zone 69 simultaneously.In order to simplify technology, the area beyond the pattern covers viewing area 66P of light shield layer 68.In a preferred embodiment, the optional usefulness of the material of light shield layer 68 has monolayer material (as: CrO light tight and insulation
x) or contain the double-decker (as: pi/carbon black) of macromolecule resin, or contain the double-decker (as: SiO of light tight metal
x/ Cr).
At last, shown in Fig. 4 G and 5G, before carrying out evaporation process, need carry out the surface treatment program earlier, can adopt ultraviolet and ozone (UV/O
3) or O
2The plasma surface cleaning, and then deposit an organic/polymer luminous material layer 70 and a cathodic metal layer 72 in regular turn, just roughly finish the technology of AM-OLED.
Compared with prior art, the present invention covers light shield layer 68 on the surface beyond the 66P of viewing area, maskable amorphous silicon layer 56 to be preventing it by UV light or plasma damage in the follow-up surface clean technology, and then improves the problem that existing threshold voltage increases or leakage current increases.In addition, light shield layer 68 covers the first transparency conducting layer 66I and the second transparency conducting layer 66II at least, can isolate parasitic OLED zone 69, therefore can effectively avoid parasitic OLED zone 69 to produce luminescence phenomenon, and then reduce unnecessary power consumption and vision interference.
Though the present invention with a preferred embodiment openly as above; but it is not in order to qualification the present invention, those skilled in the art, without departing from the spirit and scope of the present invention; should do various changes and retouching, so protection scope of the present invention is as the criterion by claims are defined.
Claims (19)
1. active system organic electroluminescent display, it includes the pixel region of a plurality of arrays, wherein includes in each pixel region:
At least two non-crystalline silicon tft elements, the raceway groove of this non-crystalline silicon tft element is made of an amorphous silicon layer;
One viewing area is made of a transparency conducting layer; And
One light shield layer covers this amorphous silicon layer of non-crystalline silicon tft element at least and exposes this viewing area.
2. active system organic electroluminescent display as claimed in claim 1, wherein this light shield layer is made of material opaque and insulation.
3. active system organic electroluminescent display as claimed in claim 2, wherein this light shield layer is by CrO
xSingle layer structure, the double-decker or the SiO of pi/carbon black
xThe double-decker of/Cr constitutes.
4. active system organic electroluminescent display as claimed in claim 1, wherein this light shield layer covers zone in addition, this viewing area.
5. active system organic electroluminescent display as claimed in claim 1, wherein this light shield layer covers this viewing area this transparency conducting layer in addition, in order to isolate the zone of a parasitic display of organic electroluminescence.
6. active system organic electroluminescent display as claimed in claim 1, wherein this transparency conducting layer is made of the ITO material.
7. active system organic electroluminescent display as claimed in claim 1, wherein each pixel region is formed by a data line that intersects vertically and the definition of one source pole line, and includes at least one capacitor in each pixel region.
8. active system organic electroluminescent display as claimed in claim 1 wherein is coated with a luminous organic material layer and a cathodic metal layer in addition on each pixel region surface.
9. the method for making of an active system organic electroluminescent display, it includes the following step:
One transparent substrates is provided;
On this transparent substrates, form a first metal layer, and the definition of this first metal layer formed two first, second sweep traces that extend along directions X and the figure of a capacitor lower electrode, wherein the bottom electrode of this capacitor is between this first, second sweep trace;
On the whole surface of this transparent substrates, form one first insulation course;
Definition forms an island structure on a predetermined TFT element area of this first sweep trace, and wherein this island structure is made of in regular turn one second insulation course and an amorphous silicon layer;
Form an etch stop layer in the top of this island structure, to cover the grid of this predetermined TFT element area;
On the surface of this island structure, form a doped amorphous silicon layer and one second metal level in regular turn;
This second metal level definition is formed one along the data line pattern of Y direction extension and the top electrode of a capacitor, and form an opening in the top of this island structure, be isolated into one source/drain electrode layer so that should be scheduled to this second metal level of TFT element area, and make this doped amorphous silicon layer of this predetermined TFT element area be isolated into one source/drain diffusion regions;
Form a protective seam on the whole surface of this transparent substrates, and form one first through hole and one second through hole in this protective seam, wherein this first through hole exposes one of this second sweep trace end, and this second through hole exposes one of top electrode of this capacitor end;
On the whole surface of this transparent substrates, form a transparency conducting layer, and this transparency conducting layer is defined the figure that forms a viewing area, make this transparency conducting layer cover the exposed region of this first through hole and this second through hole simultaneously; And
Form a light shield layer on the whole surface of this transparent substrates, wherein this light shield layer covers this amorphous silicon layer of this predetermined TFT element area at least, and this light shield layer exposes this viewing area.
10. the method for making of active system organic electroluminescent display as claimed in claim 9, other includes the following step:
Carry out surface clean technology;
Deposition one luminous organic material layer on the whole surface of this transparent substrates; And
Deposition one cathodic metal layer on the whole surface of this luminous organic material layer.
11. the method for making of active system organic electroluminescent display as claimed in claim 10, wherein this surface clean technology is ultraviolet and ozone (UV/O
3) or O
2The plasma surface cleaning.
12. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this light shield layer is made of material opaque and insulation.
13. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this light shield layer is by CrO
xSingle layer structure, the double-decker or the SiO of pi/carbon black
xThe double-decker of/Cr constitutes.
14. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this light shield layer shields the amorphous silicon layer of this non-crystalline silicon tft element.
15. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this light shield layer covers this viewing area this transparency conducting layer in addition, in order to isolate the zone of a parasitic display of organic electroluminescence.
16. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this transparency conducting layer is made of the ITO material.
17. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein the pattern of this viewing area is between this first, second sweep trace and this data line.
18. the method for making of active system organic electroluminescent display as claimed in claim 9, wherein this transparency conducting layer covers the exposed region of this first through hole and this second through hole, can make to produce between this second sweep trace and this electric capacity top electrode to be electrically connected.
19. the method for making of active system organic electroluminescent display as claimed in claim 9 when wherein making this predetermined TFT element on this first sweep trace, is also made another predetermined TFT element on this second sweep trace.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02120294XA CN1277148C (en) | 2002-05-22 | 2002-05-22 | Active type organic electroluminous display and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02120294XA CN1277148C (en) | 2002-05-22 | 2002-05-22 | Active type organic electroluminous display and its making method |
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| CN1459656A true CN1459656A (en) | 2003-12-03 |
| CN1277148C CN1277148C (en) | 2006-09-27 |
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Cited By (5)
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| CN101853104A (en) * | 2010-06-02 | 2010-10-06 | 信利半导体有限公司 | Display with touch screen function and manufacturing method thereof |
| CN101542735B (en) * | 2007-05-31 | 2012-04-18 | 松下电器产业株式会社 | Organic EL device and manufacturing method thereof, and Organic EL display |
| CN101533843B (en) * | 2008-03-12 | 2012-06-27 | 索尼株式会社 | Semiconductor device |
| CN101847648B (en) * | 2009-03-23 | 2012-11-21 | 北京京东方光电科技有限公司 | Active matrix organic light-emitting diode pixel structure and manufacturing method thereof |
| CN105336295A (en) * | 2014-08-05 | 2016-02-17 | 三星显示有限公司 | Display apparatus |
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2002
- 2002-05-22 CN CNB02120294XA patent/CN1277148C/en not_active Expired - Lifetime
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| CN101542735B (en) * | 2007-05-31 | 2012-04-18 | 松下电器产业株式会社 | Organic EL device and manufacturing method thereof, and Organic EL display |
| CN101533843B (en) * | 2008-03-12 | 2012-06-27 | 索尼株式会社 | Semiconductor device |
| CN101847648B (en) * | 2009-03-23 | 2012-11-21 | 北京京东方光电科技有限公司 | Active matrix organic light-emitting diode pixel structure and manufacturing method thereof |
| US8542337B2 (en) | 2009-03-23 | 2013-09-24 | Beijing Boe Optoelectronics Technology Co., Ltd. | Pixel structure of active matrix organic light emitting display and manufacturing thereof |
| CN101853104A (en) * | 2010-06-02 | 2010-10-06 | 信利半导体有限公司 | Display with touch screen function and manufacturing method thereof |
| CN101853104B (en) * | 2010-06-02 | 2012-05-30 | 信利半导体有限公司 | Display with touch screen function and manufacturing method thereof |
| CN105336295A (en) * | 2014-08-05 | 2016-02-17 | 三星显示有限公司 | Display apparatus |
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| US10784329B2 (en) | 2014-08-05 | 2020-09-22 | Samsung Display Co., Ltd. | Display apparatus |
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