CN1459655A - Formation method of reflection type liquid crystal display and its layout structure of joint pad - Google Patents
Formation method of reflection type liquid crystal display and its layout structure of joint pad Download PDFInfo
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- CN1459655A CN1459655A CN 02120252 CN02120252A CN1459655A CN 1459655 A CN1459655 A CN 1459655A CN 02120252 CN02120252 CN 02120252 CN 02120252 A CN02120252 A CN 02120252A CN 1459655 A CN1459655 A CN 1459655A
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- crystal display
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Abstract
A method for preparing reflection-type LCD and the arranging structure of its connection pads features that when its thin-film transistors are prepared, the indium tin oxide is directly generated on the first or the second metal layer fo r directly obtaining connection pads after the contact window for scan pad or data pad is etched, so simplifying the process to generate light mask.
Description
Technical field
The present invention relates to the manufacturing technology of LCD (LCD), particularly about the formation method of a kind of reflective liquid-crystal display (reflective LCD) and the arrangement architecture of joint sheet thereof.
Background technology
Indium tin oxide (ITO) has been widely used for making transparent pixels (pixel) electrode of Thin Film Transistor-LCD and the contact layer of film transistor array plate (plate) and peripheral driver (driver) integrated circuit (IC) attaching.Because indium tin oxide has excellent contact resistance (contactresistance) and lifetime test fiduciary level (reliability of life test), therefore, indium tin oxide almost is to make the most general selection material of joint sheet.Yet for reflective liquid-crystal display, using indium tin oxide is not necessary as pixel electrode, because reflectivity gold layer replaces.But, in the reflective liquid-crystal display processing procedure, but still need one extra indium tin oxide light shield (mask) to make joint sheet.
In a typical reflective liquid-crystal display processing procedure, as shown in Figure 1, it is included as the first metal layer processing procedure 11, amorphous silicon island (a-Si island) processing procedure 12 and the second metal level processing procedure 13 of making the thin film transistor (TFT) structure, and the follow-up processing procedure 15 that still is included as scattering layer (scattering film) processing procedure (bumping) 14 that improves the light utilization rate, etching contact hole (contact window), deposition indium tin oxide are with processing procedure 16 that forms joint sheet and the processing procedure 17 that forms reflection horizon (reflector).Significantly, even if do not take indium tin oxide to be made for pixel electrode in a reflective devices, extra one indium tin oxide light shield processing procedure is still necessary programs in the tft array processing procedure to form joint sheet.This obviously causes processing procedure complicated and tediously long, and production efficiency is also low.And in etching contact hole process, first and second layer on surface of metal that is connected to thin film transistor (TFT) gate and source/drain respectively attaches residual chemical agent easily, when this will cause the indium tin oxide of subsequent deposition to be bonded to metal level surperficial, its property followed and poorly conductive and contact resistance are big, the efficient of then transmitting signal therebetween can reduce, and causes the quality of LCD bad.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of manufacture method of LCD of simplification.According to the inventive method, after a kind of program of making the reflective liquid-crystal display thin film transistor (TFT) array is included in the structure of deposition first or second metal level with the formation thin film transistor (TFT) array, form an indium tin oxide immediately on this first or second metal level, so, behind the subsequent etch contact hole, directly obtain scanner pad (scan bondingpad) or data pad (data bonding pad), needn't be again through one light shield to make the indium tin oxide joint sheet, processing procedure is simplified.
The technical solution used in the present invention is as follows:
A kind of formation method of reflective liquid-crystal display, the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Form indium tin oxide on this first metal layer;
Make gate, scanner pad and data pad with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Make source/drain and data line with this second metal level; And
Form conductive layer and connect this data pad and data line.
Said method more comprises the formation reflection horizon.
A kind of formation method of reflective liquid-crystal display, the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Make gate and sweep trace with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Form indium tin oxide on this second metal level;
Make source/drain, scanner pad and data pad with this second metal level; And
Form conductive layer and connect this scanner pad and sweep trace.
Said method more comprises the formation reflection horizon.
A kind of formation method of reflective liquid-crystal display, the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Form first indium tin oxide on this first metal layer;
Make gate and sweep trace with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Form second indium tin oxide on this second metal level;
Make source/drain and data line with this second metal level; And
Form the contact hole of scanner pad and data pad.
Said method more comprises the formation reflection horizon.
Said method more comprises the following steps:
Make the data pad with this first metal layer;
Make scanner pad with this second metal level;
Form first conductive layer and connect this scanner pad and sweep trace; And
Form second conductive layer and connect this data pad and data line.
A kind of arrangement architecture of joint sheet of reflective liquid-crystal display comprises:
The first metal layer, it comprises gate;
Indium tin oxide is on this first metal layer;
Second metal level, it comprises source/drain;
Data line connects this source electrode;
Scanner pad is provided by this first metal layer;
The data pad is provided by this first metal layer; And
This data pad and data line connect.
A kind of arrangement architecture of joint sheet of reflective liquid-crystal display comprises:
The first metal layer, it comprises gate;
Second metal level, it comprises source/drain;
Indium tin oxide is on this second metal level;
Sweep trace connects this gate;
Scanner pad is provided by this second metal level;
The data pad is provided by this second metal level; And
This scanner pad and sweep trace connect.
A kind of arrangement architecture of joint sheet of reflective liquid-crystal display comprises:
The first metal layer, it comprises gate;
First indium tin oxide is on this first metal layer;
Second metal level, it comprises source/drain;
Second indium tin oxide is on this second metal level;
First joint sheet with this first metal layer formation; And
Second joint sheet with this second metal level formation.
Wherein above-mentioned first and second joint sheet is respectively scanner pad and data pad.
The arrangement architecture of above-mentioned joint sheet more comprises:
Sweep trace connects this gate;
Data line connects this source electrode;
This second joint sheet and sweep trace connect; And
This first joint sheet and data line connect.
The formation method of reflective liquid-crystal display of the present invention and the arrangement architecture of joint sheet thereof form joint sheet when making thin film transistor (TFT) array for reflective liquid-crystal display simultaneously, have reduced the indium tin oxide light shield that forms joint sheet together, have simplified processing procedure.
Description of drawings
Fig. 1 is the manufacturing process of a known reflective liquid-crystal display;
Fig. 2 is the manufacturing process of the present invention's first preferred embodiment;
Fig. 3 A, Fig. 3 B and Fig. 3 C are respectively the synoptic diagram of the TFT that processing procedure obtained structure, scanner pad structure and data pad structure according to Fig. 2;
Fig. 4 is the manufacturing process of the present invention's second preferred embodiment;
Fig. 5 A, Fig. 5 B and Fig. 5 C are respectively the synoptic diagram of the TFT that processing procedure obtained structure, scanner pad structure and data pad structure according to Fig. 4;
Fig. 6 is the manufacturing process of the present invention's the 3rd preferred embodiment;
Fig. 7 A, Fig. 7 B and Fig. 7 C are respectively the synoptic diagram of the TFT that processing procedure obtained structure, scanner pad structure and data pad structure according to Fig. 6.
Embodiment
Below enumerate embodiment, and in conjunction with the accompanying drawings, the present invention is described in further detail.
Figure 2 shows that the LCD manufacturing process of first embodiment of the invention, it is in step 11 ' in, after finishing the first metal layer, deposit one deck indium tin oxide immediately on the first metal layer, this the first metal layer is included in the gate and following scanner pad and the data pad in the TFT structure, follow-up processing procedure 12 to 17 is identical with aforementioned known manufacturing process shown in Figure 1, but do not need the indium tin oxide deposition of step 16, therefore reduce the light shield processing procedure one, and the anchor effect between indium tin oxide and the first metal layer is preferable.This is formed at indium tin oxide on the first metal layer can directly be made for joint sheet behind the etching contact hole contact layer.Fig. 3 A, Fig. 3 B and Fig. 3 C are the structure cut-open view that processing procedure obtained according to Fig. 2, and wherein Fig. 3 A is the synoptic diagram of TFT structure, and Fig. 3 B is the synoptic diagram of scanner pad structure, and Fig. 3 C is the synoptic diagram of data pad structure.In Fig. 3 A, the thin film transistor (TFT) structure is roughly the same with known techniques, wherein gate 20a is provided by the first metal layer 20, deposit indium tin oxide 21 on it, gate insulation layer 22 covers gate 20a top, be formed with amorphous silicon island 23 on it, the surface of amorphous silicon island 23 is formed with the n+ zone 24 of the source of being made for/drain contact, and source/drain is provided by second metal level 25, cover insulation course 26 on it again and be covered 27, lining 27 can provide the making scattering layer, forms reflection horizon 28 on it again, and reflection horizon 28 is connected with second metal level 25 at contact hole 29.In Fig. 3 B, scanner pad 20b is provided by the first metal layer 20, after contact hole 30 forms, has been formed with indium tin oxide 21 on the scanner pad 20b.In Fig. 3 C, data pad 20c is still provided by the first metal layer 20, these are different with typical liquid crystal, yet data line 25d is still provided by second metal level 25, be connected by reflection horizon 28 between data line 25d and the data pad 20c, reflection horizon 28 is connected with data line 25d at contact hole 31, and is connected with data pad 20c at contact hole 32, and 33 is data pad contact hole.
The LCD manufacturing process of second embodiment of the invention, as shown in Figure 4, roughly the embodiment with Fig. 2 is identical for it, but in step 11, the first metal layer processing procedure is identical with aforementioned conventional process shown in Figure 1, and in step 13 ' in, after finishing second metal level, deposit one deck indium tin oxide immediately on second metal level, this second metal level is included in the source/drain and following scanner pad and the data pad in the TFT structure, same, this embodiment does not need the indium tin oxide deposition of step 16, therefore reduce the light shield processing procedure one, and the anchor effect between the indium tin oxide and second metal level is preferable.This is formed at indium tin oxide on second metal level can directly be made for joint sheet behind the etching contact hole contact layer.Fig. 5 A, Fig. 5 B and Fig. 5 C are the structure cut-open view that processing procedure obtained according to Fig. 4, and wherein Fig. 5 A is the synoptic diagram of TFT structure, and Fig. 5 B is the synoptic diagram of scanner pad structure, and Fig. 5 C is the synoptic diagram of data pad structure.In Fig. 5 A, the thin film transistor (TFT) structure is roughly the same with Fig. 3 A, but does not deposit indium tin oxide on the first metal layer 20, so do not have indium tin oxide on the gate 20a, and on second metal level 25, depositing indium tin oxide 21, other structures are then identical with Fig. 3 A.In Fig. 5 B, scanner pad 25b is provided by second metal level 25, these are different with typical liquid crystal, yet sweep trace 20d is still provided by the first metal layer 20, be connected by reflection horizon 28 between sweep trace 20d and the scanner pad 25b, reflection horizon 28 is connected with sweep trace 20d at contact hole 34, and is connected with scanner pad 25b at contact hole 35, and 30 is the scanner pad contact hole.In Fig. 5 C, data pad 25c is still provided by second metal level 25, after contact hole 33 forms, has been formed with indium tin oxide 21 on the data pad 25c.
Fig. 6 is the manufacturing process of third embodiment of the invention, it is in step 11 ' and 13 ' in, after finishing first and second metal level, deposit one deck indium tin oxide immediately on first and second metal level, this the first metal layer is included in the gate and following scanner pad in the TFT structure, and second metal level is included in the source/drain and following data pad in the TFT structure, other step is still identical with known techniques, same, this embodiment needn't be joint sheet deposition indium tin oxide behind the etching contact hole, therefore reduce the light shield processing procedure one, and the anchor effect between indium tin oxide and first and second metal level is preferable.This is formed at indium tin oxide on the first metal layer can directly be made for scanner pad behind the etching contact hole contact layer, is formed at indium tin oxide on second metal level then directly is made for the data pad behind the etching contact hole contact layer.Fig. 7 A, Fig. 7 B and Fig. 7 C are the structure cut-open view that processing procedure obtained according to Fig. 6, and wherein Fig. 7 A is the synoptic diagram of TFT structure, and Fig. 7 B is the synoptic diagram of scanner pad structure, and Fig. 7 C is the synoptic diagram of data pad structure.In Fig. 7 A, the thin film transistor (TFT) structure is roughly the same with known techniques, just deposits indium tin oxide 21a on the first metal layer 20, and deposit indium tin oxide 21b on second metal level 25.In Fig. 7 B, scanner pad 20b is still provided by the first metal layer 20, after contact hole 30 forms, has been formed with indium tin oxide 21a on the scanner pad 20b.In Fig. 7 C, data pad 25c is still provided by second metal level 25, after contact hole 33 forms, has been formed with indium tin oxide 21b on the data pad 25c.
The purpose of the above preferred embodiment is to illustrate the present invention, and unintentionally the present invention is limited, based on above explanation or to make an amendment or change from embodiments of the invention study be possible, so technological thought of the present invention is attempted and should be decided by the claim scope and the equalization thereof of this case.
Claims (12)
1. the formation method of a reflective liquid-crystal display is characterized in that: the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Form indium tin oxide on this first metal layer;
Make gate, scanner pad and data pad with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Make source/drain and data line with this second metal level; And
Form conductive layer and connect this data pad and data line.
2. the formation method of reflective liquid-crystal display as claimed in claim 1 is characterized in that: more comprise forming the reflection horizon.
3. the formation method of a reflective liquid-crystal display is characterized in that: the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Make gate and sweep trace with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Form indium tin oxide on this second metal level;
Make source/drain, scanner pad and data pad with this second metal level; And
Form conductive layer and connect this scanner pad and sweep trace.
4. the formation method of reflective liquid-crystal display as claimed in claim 3 is characterized in that: more comprise forming the reflection horizon.
5. the formation method of a reflective liquid-crystal display is characterized in that: the thin film transistor (TFT) array that this method forms reflective liquid-crystal display forms joint sheet simultaneously, includes following steps:
Form the first metal layer;
Form first indium tin oxide on this first metal layer;
Make gate and sweep trace with this first metal layer;
Making thin film transistor (TFT) structure;
Form second metal level;
Form second indium tin oxide on this second metal level;
Make source/drain and data line with this second metal level; And
Form the contact hole of scanner pad and data pad.
6. the formation method of reflective liquid-crystal display as claimed in claim 5 is characterized in that: more comprise forming the reflection horizon.
7. the formation method of reflective liquid-crystal display as claimed in claim 5 is characterized in that: more comprise the following steps:
Make the data pad with this first metal layer;
Make scanner pad with this second metal level;
Form first conductive layer and connect this scanner pad and sweep trace; And
Form second conductive layer and connect this data pad and data line.
8. the arrangement architecture of the joint sheet of a reflective liquid-crystal display is characterized in that: comprising:
The first metal layer, it comprises gate;
Indium tin oxide is on this first metal layer;
Second metal level, it comprises source/drain;
Data line connects this source electrode;
Scanner pad is provided by this first metal layer;
The data pad is provided by this first metal layer; And
This data pad and data line connect.
9. the arrangement architecture of the joint sheet of a reflective liquid-crystal display is characterized in that: comprising:
The first metal layer, it comprises gate;
Second metal level, it comprises source/drain;
Indium tin oxide is on this second metal level;
Sweep trace connects this gate;
Scanner pad is provided by this second metal level;
The data pad is provided by this second metal level; And
This scanner pad and sweep trace connect.
10. the arrangement architecture of the joint sheet of a reflective liquid-crystal display is characterized in that: comprising:
The first metal layer, it comprises gate;
First indium tin oxide is on this first metal layer;
Second metal level, it comprises source/drain;
Second indium tin oxide is on this second metal level;
First joint sheet with this first metal layer formation; And
Second joint sheet with this second metal level formation.
11. the arrangement architecture of the joint sheet of reflective liquid-crystal display as claimed in claim 10 is characterized in that: wherein this first and second joint sheet is respectively scanner pad and data pad.
12. the arrangement architecture of the joint sheet of reflective liquid-crystal display as claimed in claim 10 is characterized in that: more comprise:
Sweep trace connects this gate;
Data line connects this source electrode;
This second joint sheet and sweep trace connect; And
This first joint sheet and data line connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 02120252 CN1459655A (en) | 2002-05-17 | 2002-05-17 | Formation method of reflection type liquid crystal display and its layout structure of joint pad |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02120252 CN1459655A (en) | 2002-05-17 | 2002-05-17 | Formation method of reflection type liquid crystal display and its layout structure of joint pad |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1893096B (en) * | 2005-07-07 | 2011-01-26 | 三星电子株式会社 | Thin film transistor array panel and method for manufacturing the same |
| CN101248715B (en) * | 2005-08-24 | 2011-02-09 | 东丽薄膜先端加工株式会社 | Flat display member and method for manufacturing same, and flat display and method for manufacturing same |
-
2002
- 2002-05-17 CN CN 02120252 patent/CN1459655A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1893096B (en) * | 2005-07-07 | 2011-01-26 | 三星电子株式会社 | Thin film transistor array panel and method for manufacturing the same |
| US7932965B2 (en) | 2005-07-07 | 2011-04-26 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method for manufacturing the same |
| CN101248715B (en) * | 2005-08-24 | 2011-02-09 | 东丽薄膜先端加工株式会社 | Flat display member and method for manufacturing same, and flat display and method for manufacturing same |
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