CN1454031A - Method for producing electroluminescent display apparatus - Google Patents
Method for producing electroluminescent display apparatus Download PDFInfo
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- CN1454031A CN1454031A CN03122133A CN03122133A CN1454031A CN 1454031 A CN1454031 A CN 1454031A CN 03122133 A CN03122133 A CN 03122133A CN 03122133 A CN03122133 A CN 03122133A CN 1454031 A CN1454031 A CN 1454031A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 24
- 239000002274 desiccant Substances 0.000 claims abstract description 11
- 238000001179 sorption measurement Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000007789 sealing Methods 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 6
- 230000008595 infiltration Effects 0.000 abstract description 3
- 238000001764 infiltration Methods 0.000 abstract description 3
- 239000005394 sealing glass Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- -1 3-aminomethyl phenyl anilino- Chemical class 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000016768 molybdenum Nutrition 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WBEDMFHOODHFKR-UHFFFAOYSA-N 1-n,1-n'-bis(3-methylphenyl)-1-n,1-n',4-triphenylcyclohexa-2,4-diene-1,1-diamine Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C2(C=CC(=CC2)C=2C=CC=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 WBEDMFHOODHFKR-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 208000031481 Pathologic Constriction Diseases 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000036262 stenosis Effects 0.000 description 1
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- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/872—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
Abstract
The invention provides a manufacturing method of electroluminescent display device, in a sealing structure of an EL element of the invention, there are inhibited a fluctuation of a width of sealing resin, infiltration of moisture in a portion formed with an organic EL element and breaking of a device substrate formed with the EL element. In this structure, a sealing glass substrate is mounted on a quartz plate, and a device glass substrate is absorbed by an absorbing plate. The organic EL display unit formed on a main surface of the device glass substrate and a desiccant layer formed on a main surface of the sealing glass substrate are disposed facing to each other. There is provided on a main surface of the absorbing plate a convex portion for applying a load by the absorbing plate to the sealing resin. The load is applied by the absorbing plate until a gap between the device glass substrate and the sealing glass substrate becomes a predetermined gap.
Description
Technical field
The present invention relates to the manufacture method of el display device, refer to especially about possess the 1st substrate that forms electroluminescent cell on the first type surface, with method for packing in order to the el display device of the 2nd substrate that seals above-mentioned the 1st substrate.
Background technology
In recent years, because of adopting the EL display unit of electroluminescence (Electro Luminescence :) element hereinafter referred to as " EL ", be about to become replacement cathode ray tube (CRT, Cathode Ray Tube) and LCD (LCD, Liquid Crystal Display) next be display unit from generation to generation, and gets most of the attention.
Organic EL display panel is to dispose most rectangular pixels on the element glass substrate, comprise in this pixel organic EL with in order to driving the thin-film transistor (TFT, thin film transistor) of organic EL, and form the viewing area.Based on organic EL fear the water characteristic, and a kind of packaging structure is proposed, can utilize the crown cap of coating drier or hermetic sealing substrate to be covered in above-mentioned glass substrate and infiltrate to prevent that water from dividing as lid.
When using the packaging structure of sealed glass substrate, be, apply load-carrying, and utilize the involution resin to make it to fit with flat board with formed element glass substrate of organic EL and sealed glass substrate.
The problem that invention institute desire solves
Yet, maximization along with the element glass substrate, the load-carrying that large-area element glass substrate is applied uniformity also becomes difficult, and the load-carrying that applies for making in the applying step can uniformityization must utilize materials such as fender, and then derives various relevant issues.For example, produce the deviation of involution resin width, in its width stenosis comparatively, or produce big space part between element glass substrate and sealed glass substrate, moisture then may be from this infiltration.
In addition, in the applying step, though load-carrying is added on the element glass substrate so that and be adjusted into predetermined gap between the hermetic sealing substrate, it is crooked that this load-carrying may make the element glass substrate produce, and occur breaking.
Summary of the invention
The present invention is the manufacture method of grinding the el display device of wound in view of the above problems, wherein this el display device possesses has: the 1st substrate that forms electroluminescent cell on first type surface, in order to encapsulate the 2nd substrate of above-mentioned the 1st substrate, in the manufacture method of this el display device, be to have above-mentioned the 1st substrate is adsorbed in adsorption plate, and utilization is added in load-carrying the mode of above-mentioned adsorption plate, make above-mentioned the 1st substrate utilize the involution resin and with the step of above-mentioned the 2nd baseplate-laminating, and, be provided with the protuberance that is added in above-mentioned involution resin in order to load-carrying with adsorption plate at the first type surface of above-mentioned adsorption plate.
According to said structure, when fit the 1st substrate and the 2nd substrate, can suppress the deviation of involution resin width.
In addition, except said structure, and on the 2nd substrate, has the bag portion that drier is formed on the bottom.According to said structure, because of the bottom formation drier of bag portion, so can guarantee the bigger drier and the interval width of organic EL.Like this, can prevent to produce because of drier contact organic EL causes the impaired situation of organic EL.
In addition, except said structure, and on above-mentioned adsorption plate first type surface, be provided with the recess relative with bag portion.Because of being provided with a bag portion, 1st substrate portion relative with bag portion will be born the load-carrying of adsorption plate and may be produced the situation of breaking because of crooked.According to said structure, by on adsorption plate, being provided with recess, and make the load-carrying of adsorption plate can not be applied to the 1st substrate portion, do not break or crooked situation produces so have.
And because of the substrate area that applies load-carrying is dwindled, airlift is pressed and also can be reduced, and the problem that solves the substrate maximization is had its superiority.
Description of drawings
Fig. 1 is the vertical view of the element glass substrate 1 of expression embodiment of the present invention.
Fig. 2 is the vertical view of the sealed glass substrate 20 of expression embodiment of the present invention.
Fig. 3 is the cutaway view before the element glass substrate 1 of expression embodiment of the present invention is fitted with sealed glass substrate 10.
Fig. 4 is the element glass substrate 1 of expression embodiment of the present invention and the phantom of sealed glass substrate 10 fit-states.。
Fig. 5 is the vertical view of the pixel of the organic EL display element 2 of expression.
Fig. 6 (a) reaches the cutaway view of the pixel that (b) is the organic EL display element 2 of expression.
Symbol description: 1 element glass substrate; 2 organic EL display elements; 10 sealed glass substrates; 11 bags of portions (recess); 12 desiccant layers; 13 involution resins; 20 adsorption plates; 21 protuberances; 22 recesses; 30 quartz plates; 40 ultraviolet lamps.
Embodiment
Below, with reference to accompanying drawing to describe embodiments of the present invention in detail.At first, with regard to the formed element glass substrate of organic EL be illustrated in order to the hermetic sealing substrate that encapsulates this element glass substrate.
Fig. 1 is the vertical view of expression element glass substrate 1.On the first type surface of element glass substrate 1 (female glass substrate), most organic EL display elements 2 is configured to rectangular across predetermined interval.The function of each organic EL 2 is as organic EL panel, wherein comprises most the pixels that are made of with TFT etc. organic EL and organic EL driving.
Fig. 2 is the vertical view of expression sealed glass substrate 10.On the first type surface of sealed glass substrate 10, being formed with recess 11 (hereinafter referred to as bag portion 11), is corresponding with the formation zone of organic EL display element 2.Bag portion 11 is formed at than on the big zone of organic EL 2.Bag portion 11 for example forms with the processing mode of etching sealed glass substrate 10 first type surfaces.
Then, on the bottom of bag portion 11, be formed with desiccant layer 12 in order to moistures such as absorption moisture.Desiccant layer 12 is for example with pulverous calcium oxide and barium monoxide etc., and will be dissolved under the state of solvent as the resin of bonding agent, coats the bottom of bag portion 11, and utilizes ultraviolet ray (UV) to shine or impose heat treatment and make it sclerosis.
In order to increase desiccant layer 12 surface areas, for example helically shaped comparatively desirable to be coated with, but its shape can be arbitrary form.At bag portion 11 bottoms configuration desiccant layer 12, be in order to ensure the interval width of bigger desiccant layer 12 with organic EL, undermine organic EL to prevent desiccant layer contact organic EL.
In addition, the involution resin 13 that will be made by epoxy resin etc. is coated on the sealed glass substrate 10 around bag portion 11.This involution resin 13 also can not be formed on the sealed glass substrate 10, and is formed on the element glass substrate 1.
Then, with reference to Fig. 3 and Fig. 4 with the applying step of explanation element glass substrate 1 with sealed glass substrate 10.Fig. 3 is the cutaway view before element glass substrate 1 is fitted with sealed glass substrate 10, and Fig. 4 is the phantom of element glass substrate 1 and sealed glass substrate 10 fit-states, is the part that expression forms a slice organic EL panel.
As shown in Figure 3, at nitrogen (N
2) in the such inert gas environment of gas, sealed glass substrate 10 is to be placed on the quartz plate 30, on the other hand, element glass substrate 1, be vacuum suction on metallic adsorption plate 20, this adsorption plate 20 is the opposites that are configured in quartz plate 30 tops.Also promptly, formed organic EL display element 2 on the first type surface of element glass substrate 1 with formed desiccant layer 12 on the first type surface of sealed glass substrate 10, is to dispose in the mode that faces one another.
Then, on the first type surface of adsorption plate 20, be provided with protuberance 21, be added on the involution resin 13 in order to load-carrying with adsorption plate 20.In addition, the first type surface of adsorption plate 20 is provided with the recess 22 relative with bag portion 11.These recess 22 formed width are greater than bag portion 11.
Therefore, with not shown travel mechanism adsorption plate 20 is descended.Then, as shown in Figure 4,, be added to till the interval G that reaches predetermined between element glass substrate 1 and the sealed glass substrate 10 by the load-carrying that adsorption plate 20 is applied.
At this, because of the first type surface of adsorption plate 20 is provided with the recess 22 relative with bag portion 11, so the load-carrying of adsorption plate 20 is added on the involution resin 13 fifty-fifty.Like this, can suppress the deviation of involution resin 13 width W, so can eliminate the problem that moisture infiltrates from involution resin 13 width W narrows.
In addition, because of the first type surface of adsorption plate 20 is provided with the recess 22 relative with bag portion 11, so do not add thereon in that the part of element glass substrate 1 that should recess 22 is then had adsorption plate 20.Like this, can prevent that element glass substrate 1 this part is crooked or break toward the below.If this recess 22 is not set, then element glass substrate 1 can produce buckling phenomenon, and because of forming the relation of bag portion 11, makes crooked amplitude bigger, is element glass substrate 1 flaw or the situation of breaking and derive.
In addition, the width L1 of recess 22 is comparatively desirable with the width L2 greater than bag portion 11.This is because the load-carrying of adsorption plate 20 is not applied to the cause of the element glass substrate 1 at bag portion 11 places.
Then, utilize ultraviolet ray (UV after being configured in quartz plate 30 back sides, Ultra Violet) irradiation unit 40, make ultraviolet ray penetrate quartz plate 30 and sealed glass substrate 10, and shine in involution resin 13, make 13 sclerosis of involution resin, and make element glass substrate 1 and sealed glass substrate 10 therefore bind.
And, the about 0.7mm of thickness of element glass substrate 1, sealed glass substrate 10, depth d 1 about 0.3mm of bag portion 11, about 10 μ m to the 20 μ m of interval G, the about 0.5mm to 1mm of the depth d 2 of recess 22 (height of protuberance 22) are comparatively desirable.
As above-mentioned mode, element glass substrate 1 and sealed glass substrate 10 are fitted, be formed at organic EL display element 2 unlikely infiltrations that are subjected to external moisture content of element glass substrate 1 with protection.
Then, element glass substrate 1 and sealed glass substrate 10 with fitting cut into each organic EL display element 2, to be made into each organic EL panel respectively.
Then, the dot structure example at organic EL display element 2 is illustrated.
Fig. 5 is the vertical view of organic EL display element 2 pixels of expression, and Fig. 6 (a) is the cutaway view of expression A-A line in Fig. 5, the cutaway view of Fig. 6 (b) B-B line that is expression in Fig. 5.
As Fig. 5 and shown in Figure 6, be in signal line 51 and 52 enclosing region of drain signal line, to form display pixel 115, and be adapted to rectangular.
In this display pixel 115 is to be provided with: the driving of the organic EL 60 of self-emission device, the switch TFT30 that supplies with these organic EL 60 electric currents and control timing, supply organic EL 60 electric currents is with TFT40 and keep electric capacity.And organic EL 60 are the light emitting element layers that are made of the anode 61 of the 1st electrode and luminescent material, and the negative electrode 65 of the 2nd electrode constitutes.
Also be, have the 1TFT30 of switch near the crossover location of two holding wires 51,52 with TFT, the source electrode 33s of this TFT30 be double as be and keep forming between the capacitance electrode line 54 outside the capacitance electrode 55 of electric capacity, be connected with the grid 41 of EL element driving simultaneously with the 2TFT40 of TFT, the source electrode 43s of 2TFT is connected with the anode 61 of organic EL 60, and the drain electrode 43d of another side then is connected with the driving power supply line 53 of the current source of supplying with organic EL 60.
Moreover, dispose the maintenance capacitance electrode line 54 parallel with signal line 51.This maintenance capacitance electrode line 54 is to be made of institutes such as chromium, forms electric capacity at 55 store charges of capacitance electrode that are connected with TFT source electrode 33s across gate insulating film 12.And the purpose of this maintenance electric capacity 56 is set, be in order to keep being applied to the voltage of 2TFT40 grid 41.
As shown in Figure 6, organic EL display, be by substrate that glass or synthetic resin etc. constituted or have the substrate of conductivity or the substrate 10 of semiconductor substrate etc. on, lamination is formed with TFT and organic EL in regular turn.But, with substrate with conductivity and semiconductor substrate during as substrate 10, on these substrates 10 except forming SiO
2Or outside the dielectric film such as SiN, also form the 1st, 2TFT and organic EL.The grid of all TFT belongs to all that to be positioned at across gate insulating film above the active layer be so-called top grid structure.
At first, the 1TFT30 of switch with TFT is described.
Shown in Fig. 6 (a), on the insulated substrate 10 that is constituted by quartz glass, alkali-free glass etc., with chemical vapour deposition technique (CVD, Chemical Vapor Deposition) etc. form amorphous silicon film, (hereinafter referred to as " a-Si film "), this a-Si film irradiating laser is made it melting recrystallization and becomes polysilicon film (hereinafter referred to as " p-Si film "), and with this film as active layer 33.On this active layer 33, with the SiO that forms
2The individual layer of film, SiN film or laminate are as gate insulating film 32.And then thereon, have: form the signal line 51 and the drain signal line 52 that forms by aluminium that double as is a grid 31 by refractory metals such as chromium, molybdenums, and dispose aluminum driving power supply line 53, with driving power as organic EL.
Then, on whole gate insulating film 32 and active layer 33, lamination has SiO in regular turn
2Film, SiN film and SiO
2Film and form interlayer dielectric 15, and insert metal such as aluminium in the contact hole of establishing at correspondence drain electrode 33d so that drain electrode 36 to be set forms all sidedly to be made of organic resin again and makes the planarization insulating film 17 that has an even surface.
Then, just be illustrated in order to the 2TFT40 of the TFT that drives organic EL.Shown in Fig. 6 (b), on the insulated substrate 10 that is constituted by quartz glass, alkali-free glass etc., be formed with in regular turn: a-Si film irradiating laser is become the active layer 43, gate insulating film 12 of polycrystalline and by grids that refractory metal constituted 41 such as chromium, molybdenums, in this active layer 43, be provided with raceway groove 43c and be provided with source electrode 43s and drain electrode 43d in these 43c both sides.Then, on whole gate insulating film 12 and active layer 43, lamination has SiO in regular turn
2Film, SiN film and SiO
2Film and form interlayer dielectric 15, and in the set contact hole of correspondence drain electrode 43d, insert the driving power supply line 53 that metal such as aluminium is connected with driving power with configuration.Dispose the planarization insulating film 17 that has an even surface that makes that constitutes by organic resin more all sidedly.And then, on position, form contact hole to source electrode 43s that should planarization insulating film 17, by this contact hole setting contact with source electrode 43s by the transparency electrode that ITO constituted, the anode 61 that also is about to organic EL is located on the planarization insulating film 17.This anode 61 is to separate to form island on each display pixel.
The structure of organic EL 60 is that following lamination is in regular turn formed: by tin indium oxide (ITO, Indium Tin Oxide) anode that transparency electrode constituted 61 such as, by MTDATA (4, two (the 3-aminomethyl phenyl anilino-) symbasis of 4-) (4,4-bis (3-methylphenylphenylamino) biphenyl) the 1st hole transporting layer that is constituted, by TPD (4,4,4-three (3-aminomethyl phenyl anilino-) triphenylamine) (4,4,4-tris (3-methylphenylphenylamino) triphenylanine) hole transporting layer 62 formed of the 2nd hole transporting layer that is constituted, by comprising quinacridone (Quinacridone)) luminescent layer 63 that constituted of the Bebq2 (10-benzo [h] quinoline-beryllium compound) of derivative, and by electron supplying layer 64 that Bebq2 constituted, by the magnesium indium alloy, aluminium, or the negative electrode 65 that aluminium alloy constituted.
And, on planarization insulating film 17, more be formed with the 2nd planarization insulating film 66.Then, 61 on anode becomes the structure of removing the 2nd planarization insulating film 66.
The effect of invention
According to the present invention, with the formed device substrate of organic EL, and in order to seal this base The hermetic sealing substrate of plate can suppress the deviation of involution resin width when fitting, and can prevent from forming The part of organic EL is infiltrated moisture.
And, because bag section bottom is formed with drier, can guarantee drier and organic EL The interval has enough width. Like this, can prevent because of drier contact organic EL, and injure Organic EL.
And then, relative with bag section recessed because being provided with on the absorption plate master surface of absorptive element substrate Section is so can solve device substrate thereby impaired problem.
Claims (8)
1. the manufacture method of an el display device, this el display device possesses and has: form the 1st substrate of electroluminescent cell on the first type surface, in order to seal the 2nd substrate of described the 1st substrate, it is characterized in that:
Have and make described the 1st substrate be adsorbed in adsorption plate, and by utilizing described adsorption plate to apply the mode of load-carrying, make the step of described the 1st substrate and the 2nd baseplate-laminating with the involution resin, and, be provided with the protuberance that is applied to described involution resin in order to load-carrying with adsorption plate at the first type surface of described adsorption plate.
2. the manufacture method of el display device as claimed in claim 1 is characterized in that, described the 2nd substrate has the bag portion that the bottom is formed with drier.
3. the manufacture method of el display device as claimed in claim 2 is characterized in that, the first type surface of described adsorption plate is provided with the recess relative with bag portion.
4. the manufacture method of el display device as claimed in claim 3 is characterized in that, is located at the formed width of recess of described adsorption plate first type surface, greater than described bag portion.
5. the manufacture method of an el display device, this el display device is to possess to have: the formation zone that forms the 1st substrate of electroluminescent cell, described electroluminescent cell on first type surface relatively and be provided with the 2nd substrate of desiccant layer at first type surface, it is characterized in that
Possessing has: described the 2nd substrate is placed on the substrate-placing plate, and described the 1st substrate is adsorbed on be arranged on described substrate-placing with the adsorption plate on the plate, and then, under described the 1st substrate state relative with described the 2nd substrate, by utilizing described adsorption plate to apply the mode of load-carrying, make the step of described the 1st substrate and described the 2nd baseplate-laminating with the involution resin bed, and, be provided with the protuberance that is applied to described involution resin in order to load-carrying with described adsorption plate at the first type surface of described adsorption plate.
6. the manufacture method of el display device as claimed in claim 5, wherein, described desiccant layer is to be formed in the bag portion set in described the 2nd substrate.
7. the manufacture method of el display device as claimed in claim 6 wherein, is provided with the recess relative with bag portion at the first type surface of described adsorption plate.
8. the manufacture method of el display device as claimed in claim 7 wherein, is located at the formed width of recess of described adsorption plate first type surface, greater than the bag portion that is located at described the 2nd substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002127420A JP2003323978A (en) | 2002-04-26 | 2002-04-26 | Method of manufacturing electroluminescent display device |
| JP2002127420 | 2002-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1454031A true CN1454031A (en) | 2003-11-05 |
| CN100359714C CN100359714C (en) | 2008-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031221335A Expired - Lifetime CN100359714C (en) | 2002-04-26 | 2003-04-17 | Method for producing electroluminescent display apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7025650B2 (en) |
| JP (1) | JP2003323978A (en) |
| KR (1) | KR100500061B1 (en) |
| CN (1) | CN100359714C (en) |
| TW (1) | TWI223970B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975304B1 (en) * | 2001-06-11 | 2005-12-13 | Handspring, Inc. | Interface for processing of an alternate symbol in a computer device |
| IL161910A (en) * | 2004-05-10 | 2009-08-03 | Itzhak Bar Yona | Retro-reflective aiming means, particularly for hand firearms |
| JP4820100B2 (en) * | 2005-03-01 | 2011-11-24 | 東北パイオニア株式会社 | Self-luminous panel, self-luminous panel manufacturing method, illumination and display device |
| KR100711875B1 (en) | 2005-07-29 | 2007-04-25 | 삼성에스디아이 주식회사 | Quartz plate supporting apparatus for fabricating organic light emitting display |
| KR100673765B1 (en) | 2006-01-20 | 2007-01-24 | 삼성에스디아이 주식회사 | Organic light-emitting display device and the preparing method of the same |
| KR100688790B1 (en) * | 2006-01-27 | 2007-03-02 | 삼성에스디아이 주식회사 | Organic light emitting display device and fabricating method of the same |
| TWI348422B (en) * | 2007-05-30 | 2011-09-11 | Chimei Innolux Corp | Lamination stage, lamination device thereof and lamination method of an organic light emission display |
| US20090006198A1 (en) * | 2007-06-29 | 2009-01-01 | David George Walsh | Product displays for retail stores |
| KR101552729B1 (en) * | 2009-04-30 | 2015-09-11 | 엘지디스플레이 주식회사 | method of manufacturing a flexible display device |
| KR101927942B1 (en) | 2012-02-09 | 2018-12-12 | 삼성디스플레이 주식회사 | Organic light emitting display device and the method for manufacturing the such |
| CN105118844A (en) * | 2015-07-01 | 2015-12-02 | 深圳市华星光电技术有限公司 | Manufacturing method for flexible display panel and flexible display panel |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147217A (en) * | 1990-10-11 | 1992-05-20 | Hitachi Ltd | Device for pressurizing liquid crystal display element cell |
| US5499127A (en) * | 1992-05-25 | 1996-03-12 | Sharp Kabushiki Kaisha | Liquid crystal display device having a larger gap between the substrates in the display area than in the sealant area |
| JP3169864B2 (en) * | 1997-09-18 | 2001-05-28 | 日本電気株式会社 | LCD panel manufacturing equipment |
| US6290793B1 (en) * | 1998-06-16 | 2001-09-18 | International Business Machines Corporation | Stress-free liquid crystal cell assembly |
| JP2000164354A (en) * | 1998-11-25 | 2000-06-16 | Toyota Motor Corp | Sealing method and sealing device for el element |
| JP2001077529A (en) * | 1999-09-08 | 2001-03-23 | Canon Inc | Method and device for pasting substrate |
| CN1117400C (en) * | 2000-06-27 | 2003-08-06 | 复旦大学 | Packaging method for organic electroluminescence device |
| JP2002359071A (en) * | 2001-04-20 | 2002-12-13 | Lg Phillips Lcd Co Ltd | Organic light emitting element |
-
2002
- 2002-04-26 JP JP2002127420A patent/JP2003323978A/en active Pending
-
2003
- 2003-04-04 TW TW092107694A patent/TWI223970B/en not_active IP Right Cessation
- 2003-04-17 CN CNB031221335A patent/CN100359714C/en not_active Expired - Lifetime
- 2003-04-25 KR KR10-2003-0026232A patent/KR100500061B1/en active IP Right Grant
- 2003-04-25 US US10/423,055 patent/US7025650B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI223970B (en) | 2004-11-11 |
| US7025650B2 (en) | 2006-04-11 |
| US20040023591A1 (en) | 2004-02-05 |
| KR20030084746A (en) | 2003-11-01 |
| KR100500061B1 (en) | 2005-07-12 |
| TW200400775A (en) | 2004-01-01 |
| JP2003323978A (en) | 2003-11-14 |
| CN100359714C (en) | 2008-01-02 |
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