CN1448800A - Multiply light shield putting flatwise device and method for improving superimposed micro-image - Google Patents
Multiply light shield putting flatwise device and method for improving superimposed micro-image Download PDFInfo
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- CN1448800A CN1448800A CN02106134A CN02106134A CN1448800A CN 1448800 A CN1448800 A CN 1448800A CN 02106134 A CN02106134 A CN 02106134A CN 02106134 A CN02106134 A CN 02106134A CN 1448800 A CN1448800 A CN 1448800A
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Abstract
The present invention is optical mask leveling device. The first example of the optical mask leveling device can hold two parallel optical masks with long side in the scanning direction. After the first irradiation, the adjacent image fields is irradiated via different optical masks, and in the second irradiation, each image field is further irradiated via the other optical mask to reach the double optical mask irradiation effect. The second example of the optical mask leveling device holds two parallel optical masks with long side perpendicular to the scanning direction. After the first irradiation, the adjacent image fields is irradiated via the same optical mask, and in the second irradiation, each image field is further irradiated via the other optical mask to reach the double optical mask irradiation effect.
Description
Technical field
The invention relates to photolithography in semiconductor manufacturing, be meant a kind of micro-photographing process situation that needs to use a plurality of stack light shields especially, use many light shields and keep flat device to reach time saving method.
Background technology
Integrated circuit manufacture process be with the multilayered structure framework on the semiconductor base material, each layer film needs to cooperate etch process to form each circuit pattern with little shadow after deposition.Not only the live width of circuit pattern must be up to specification, and the accuracy of overlay is also extremely important between the double layer circuit pattern.Particularly be close to and stepped into fully the deep-sub-micrometer epoch at instantly processing procedure, when degree of accuracy relative improve of layer (current layer) with anterior layer (previous layer) overlay, for example, 0.25 micron product, tolerable overlay error will taper to below 0.1 micron, and for 0.18 micron product, tolerable overlay error will more be reduced to below 0.07 micron.Therefore, the technology of reduction overlay error is the height of product yield with the pass.
In addition, the requirement of wire spoke is more along with the progress of processing procedure, and requires ardent day by day to graph thinning.Can reach not changing processing procedure under the requirement of enhancement as the resolution and the increase depth of focus, phase displacement light-cover (phase shift mask) is subjected to great attention already.No matter be the little shadow of I line, deep ultraviolet light lithography, even the little shadow of X-ray, the collocation phase displacement light-cover has been the little shadow step that improves resolution necessity.
Fig. 1 illustrates the principle of phase displacement light-cover, wherein among Figure 1A is to utilize traditional light shield irradiation, and light shield from top to bottom comprises a glass 10, and a chromium plating paper tinsel patterned layer 20.Label 30 is shown in the electric field of mask position, and 40 of labels are the electric field level in wafer position, and label 50 is the light intensities in wafer position.Therefore traditional light shield is for line-spacing when tight, because diffraction effect, and cause the resolution deficiency.Figure 1B shows and utilizes 180 ° of phase shift devices 25 to be added on one of them slit, so that the result of the phase displacement light-cover irradiation that changes of the electric field of a slit wherein.Result by Figure 1B can find to have added phase displacement light-cover, cut because of destruction interference supports between two slits, so the slit resolution obviously heightens.
For example, be radiation source with wavelength X=193nm at present, during as if numerical aperture NA=0.63, require little shadow of resolution FS=0.1 μ m.Rayleigh coefficient (related coefficient of photoresistance and process conditions) k1=FS*NA/ λ=0.39 will reach the k value of low value like this, hardly may, therefore, reach above-mentioned resolution, utilize phase displacement light-cover, be typical little shadow technology, in order to strengthen the resolution of image.
Only manage phase displacement light-cover and have the function that improves resolution, yet mask pattern adds the phase displacement light-cover of phase shift device, the problem that the sideline is but arranged, for example Fig. 2 is a typical example, eurymeric photoresistance, desired pattern one " worker " pattern 60, therefore, except pattern " worker " pattern 60, irradiation is all wanted in other places, makes the eurymeric photoresistance become the PAC of solubility.Yet, 180 ° of phase shift devices 25 do not expose to the sun to light still to have sideline 65 to result from the upper and lower part after producing the phase displacement light-cover effect when adding original light shield.Only the tube edge line is tiny, but because non-wanting still, and therefore, behind first time irradiation, not development earlier re-uses one second light shield 70 (shade institute desirable pattern 72 but expose the sideline) carrying out irradiation, and the sideline also so be subjected to irradiation.
It is simple only to manage above-mentioned little shadow step, yet change the alignment procedures that the light shield step needs more complicated at every turn, so classic method, first light shield that normally the pattern light shield is added the phase shift device follows row and carries out irradiation along the direction of scanning, all desire the image field end of irradiation until a wafer, change second wafer again, the 3rd wafer, after amount finishes extremely by the gross in regular turn, samsara first wafer again, change and have auxiliary second light shield of eliminating the border, follow row once more and carry out the stack pattern that all image fields of irradiation to the first wafer all have first light shield and second light shield, change second wafer more in regular turn and carry out irradiation, all have until whole batches till the stack pattern of two light shields as first wafer.
Above-mentioned classic method, because the last wafer irradiation of each wafer platform must carry out position correction once, therefore, each wafer just must be calibrated twice position.This is disadvantageous for production capacity or overlay error.
Summary of the invention
Therefore motivation of the present invention is to provide one can keep flat device by time saving new light shield, and the method for reaching is that industrial community is dealt with problems, all occasions that needs the stack pattern, and method of the present invention can be used.
The present invention seeks to propose a kind of new illumination and keep flat device to improve traditional little shadow, the problem that wastes time and energy when particularly needing at least twice irradiation, all any occasions that needs to use the stack pattern, can use, be not limited to the stack of phase shift light list and general light shield, and can therefore reduce wrong generation and improve production capacity.
The designed light shield of the present invention keeps flat device, can be with two embodiment explanations, in first embodiment, light shield keeps flat device, once can be simultaneously ccontaining two side by side two light shields, and long edge, back the direction of scanning side by side, therefore, and for the first time behind the irradiation, the adjacent image field of wafer is used with different light shield irradiations, in second time during irradiation, again each image field is mended with another light shield irradiation, for example before used the first light shield irradiation, then use for the second time second light shield during irradiation instead, otherwise before used the second light shield irradiation, and for the second time then used first light shield instead during irradiation, and then reach the effect that each image field all uses two light shield irradiations.
In a second embodiment, light shield keeps flat device, ccontaining two light shields side by side, long limit vertical scanning direction, therefore, for the first time behind the irradiation, each image field of wafer is used identical light shield irradiation, in second time during irradiation, again each image field is mended with another light shield irradiation, and reached the effect that each image field all uses two light shield irradiations.Because, can once before not needing to leave wafer block, just carry out twice irradiation behind the wafer block on the wafer.Therefore, can reduce the alignment time and reach the effect that improves production capacity.
Description of drawings
Fig. 1 shows the comparison of traditional light shield and phase displacement light-cover resolution;
Fig. 2 shows needs twice irradiation to eliminate an embodiment in light shield sideline when utilizing phase displacement light-cover;
Fig. 3 shows that the light shield according to method first embodiment design of the present invention keeps flat the relative position relation figure of device, camera lens and wafer;
Fig. 4 shows according to method first embodiment of the present invention, carries out each image field for the first time behind irradiation, and wafer is labeled respectively with " 1 " or " 2 " and has used first light shield or the second light shield irradiation to represent this image field;
Fig. 5 shows according to method first embodiment of the present invention, carries out each image field for the second time behind irradiation, and each image field of wafer is successively by first light shield and the second light shield irradiation, so each image field all is labeled with " 1 " and reaches " 2 ";
Fig. 6 A shows that the light shield according to method second embodiment design of the present invention keeps flat device, and Fig. 6 B shows that the light shield according to method first embodiment design of the present invention keeps flat device, shows simultaneously among the figure that light shield has the synoptic diagram of calibrating installation;
Fig. 7 shows according to method second embodiment of the present invention, carries out each image field for the first time behind irradiation, and each image field of wafer is labeled with " 1 " and has used the first light shield irradiation to represent this image field;
Fig. 8 shows according to method second embodiment of the present invention, carries out each image field for the second time behind irradiation, and each image field of wafer is successively by first light shield and the second light shield irradiation, so each image field all is labeled with " 1 " and reaches " 2 ".
Embodiment
Serves as at present profound the necessary method of micron because use phase displacement light-cover to improve resolution, yet therefore cause the problem that has new sideline to produce between phase shift device and the mask pattern also, classic method must spend many alignment times for eliminating the border, because wafer must be up and down in the wafer adsorption site.
Therefore, the present invention will design that a kind of light shield keeps flat device and propose according to this can solution to the problems described above, not only has the effect of the cost of saving time, and also can avoid the problem of unnecessary overlay error simultaneously.All any occasions that needs to use the stack pattern can be used, and are not limited to the stack of phase displacement light-cover and general light shield.
Light shield of the present invention keeps flat device and can be illustrated with two embodiment: please note that following embodiment arranges with two horizontal series arrangement of light shield and vertical order to do explanation, do not limit the scope of the invention but do not represent, if for example the photoresistance pattern needs the occasion of more light shields (above two) repeat exposure-making, light shield of the present invention keep flat device also can make into a plurality of light shields laterally order keep flat along the direction of scanning, perhaps keep flat along the vertical scanning direction order, its using method, use the explanation of above first and second embodiment, when promoting easily, therefore also should comprise within the scope of the present invention.
First preferred embodiment of the present invention, please refer to Fig. 3, at first wafer is located, and calibration, and the hypothesis light shield put the order as shown in Figure 3, first light shield 110 is on the right side, second light shield 120 is on a left side, by a light shield carrier 121 support it is on an X-Y mobile platform 122, the light shield carrier can be at three corrections for direction of X-Y-Φ.Mobile platform 122 can the horizontal X direction move, and also vertically the bifurcation direction moves.130 of wafers are to be positioned over another to have on the platform 131 that X-Y-Φ moves.Light source is from a rectangular slot grating 118 one side of irradiation first light shields 110 downwards, rightmost for example, again via lens 125 to wafer 130, scan beginning.This moment is with respect to the Far Left of first image field 131 of wafer 130.Light shield platform 122 moves right when advancing (first light shield 110 the rightest), treats that irradiation wafer 130 also is moved to the left synchronously.Treat that first light shield 110 all is scanned from right to left by the position of irradiation, first image field 131 of wafer is all irradiation end from left to right also, are designated as image field " 1 ".Please refer to Fig. 4.
Then, light shield platform continues to move right, so that continue via rectangular slot grating second light shield 120 that exposes to the sun, with second image field, 132 exposures to wafer.As the irradiation mode of first image field, second light shield 120 is from right to left during the end of scan, second image field 132 also from left to right exposure finish, be designated as image field " 2 ".Then, this moment rectangular raster slit 118 Far Lefts at second light shield 120.At this moment, can select by the first irradiation of the Far Left of second light shield 120.Be that light shield platform 122 does not move earlier.But 130 need of wafer once move two image fields.So that the Far Left of corresponding second light shield 120 of the rightmost of predetermined image field 134.Light shield platform 122 is moved to the left.As before described, when second light shield 120 the most left was scanned up to first light shield 110 the rightest, new image field 134 and image field 133 corresponding second light shields 120 and first light shield 110 were successively finished irradiation.
Heavy again coated with the above order, light shield is by 110-〉120-〉120-〉the 110 image field 1-that expose to the sun〉2-〉2-〉1.Be after each two light shield irradiations finish, crystal wafer platform just with two image fields be the unit stepping once.The end point of light shield is again the starting point of another time scanning irradiation in addition.Finish until a line, adjust the Y position of wafer again, finish to last image field 140 irradiations of the last cell of wafer.Certainly, above-mentioned move mode also can change again, for example, light shield platform also can be at every turn at two light shields by from right to left, or from left to right all behind the irradiation, two image fields of light shield platform and crystal wafer platform synchronous shift.
Above-mentioned exposure all is the complete image field exposure to wafer 130, as for part image field 142,143,144,145,146,147,148,149 or the like, whether at least can look to form one more than the wafer, and irradiation optionally can utilize the zone to make full use of on the wafer.Please refer to each image field on the wafer as shown in Figure 4, all irradiation has been once.
Subsequently, light shield keeps flat device, adjusts again, and the light shield unit that for example moves to left is 120 cover curtains with first light shield 110 and second light shield so that carry out the irradiation second time of each image field on the wafer all to reach each image field, and each exposure once.In addition, after finishing as above-mentioned each two light shield irradiations, crystal wafer platform just with two image fields be the unit stepping once, the end point of light shield is again the starting point of another time scanning irradiation.All take turns by two light shield institute irradiations until all image fields.
From the above, the present invention can reduce the very considerable irradiation time.
Second preferred embodiment of the present invention, be to use light shield as shown in Figure 6A to keep flat device, long limit, back is vertical with the direction of scanning side by side for first light shield 110 and second light shield 120, therefore, the mode of this kind irradiation is as classic method, at every turn to behind the light shield irradiation, wafer all be able to image field be the unit stepping once.Among the embodiment of Fig. 7, be to use first light shield 110 to be the cover curtain earlier for example, to each image field irradiation of wafer, each image field all is denoted as 1 on wafer.The result of wafer after by irradiation as shown.After this each image field irradiation finished in the wherein above-mentioned step, this wafer needed elder generation along direction of scanning translation one image field unit, and after each line finished, wafer need just carry out irradiation earlier along vertical scanning direction translation one image field unit.
Subsequently, light shield platform moves horizontally with the Y direction, so that second light shield 120 is in the direction of scanning.As traditional irradiation mode, make that each image field serves as that the cover curtain carries out irradiation with second light shield 120 once more, and reach once more as Fig. 8 result.
Above-mentioned second preferred embodiment, though sweep time is than the more time of first preferred embodiment cost, right use light shield of the present invention keeps flat device, can reach before wafer does not leave wafer block, just successively uses first light shield 110 and second light shield 120 to be cover act irradiation.Therefore can reduce the time of many calibrations than classic method, and can reduce mistake, reach the purpose that improves production capacity.
Please note that light shield of the present invention keeps flat device for making calibration easily, one can make first light shield and second light shield independently carry out all around, and the calibrating installation 170 (please refer to Fig. 6 A and Fig. 6 B) of angular setting can be additional to the periphery of first light shield 110 and second light shield 120, in order to the position of calibration first light shield 110 and second light shield 120 before irradiation for the first time and for the second time.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the described claim scope.
Claims (20)
1. the device of light shield putting flatwise device more than a kind, this device comprises at least:
One light shield putting flatwise device can keep flat one first light shield and one second light shield simultaneously along the direction of scanning;
One calibrating device is in order to calibrate this first light shield and second light shield of this light shield putting flatwise device.
2. a kind of many light shields putting flatwise device device according to claim 1 is characterized in that: more comprising the 3rd light shield or more light shield simultaneously in proper order along the direction of scanning traverse, serve as that the cover curtain is heavily to cover irradiation to photoresistance to be applied to needing a plurality of light shields.
3. a kind of many light shields putting flatwise device device according to claim 1 is characterized in that: above-mentioned calibrating device allows this first light shield and this second light shield to calibrate its position separately.
4. a kind of many light shields putting flatwise device device according to claim 1, it is characterized in that: above-mentioned calibrating device has horizontal direction, and vertical direction, and azimuthal move mode are with the position of this first light list of independent calibration and this second light shield.
5. the device of light shield putting flatwise device more than a kind, this device comprises at least:
One light shield putting flatwise device is along keeping flat one first light shield and one second light shield simultaneously perpendicular to the direction of scanning;
One calibrating device is in order to calibrate this first light shield and second light shield of this light shield putting flatwise device.
6. a kind of many light shields putting flatwise device device according to claim 5 is characterized in that: more comprising the 3rd light shield or more light shield simultaneously in proper order along the vertical scanning direction traverse, serve as that the cover curtain is heavily to cover irradiation to photoresistance to be applied to needing a plurality of light shields.
7. a kind of many light shields putting flatwise device device according to claim 5 is characterized in that: above-mentioned calibrating device allows this first light shield and this second light shield to calibrate its position separately.
8. a kind of many light shields putting flatwise device device according to claim 5, it is characterized in that: above-mentioned calibrating device has horizontal direction, and vertical direction, and azimuthal move mode are to calibrate the position of this first light shield and this second light shield.
9. the method for improving superimposed micro-image of the device of light shield putting flatwise device more than a kind, this method comprises following steps at least:
(1) provide a light shield putting flatwise device, so that this light shield putting flatwise device carries one first light shield and one second light shield simultaneously, this first light shield and second light shield are adjacent along the direction of scanning lengthening;
(2) locate the first predetermined image field of this wafer to the first line;
(3) utilize this first light shield and this second light shield for the cover curtain, wafer is carried out irradiation, to produce first image field and second image field respectively;
(4) be shifted this wafer to the 4th predetermined image field;
(5) utilize this second light shield and this first light shield for covering curtain to produce the 4th image field and the 3rd image field respectively, above-mentioned odd number image field is to utilize the exposure of first light shield, and the even number image field is to utilize the exposure of second light shield; And
(6) heavily cover step (3), (4), (5) to the predetermined image field end of a line.
10. method according to claim 9 is characterized in that: more inclusion uses a calibrating installation, in order to first light shield and one second light shield are calibrated before the irradiation in the first time irradiation and the second time respectively.
11. method according to claim 10 is characterized in that: above-mentioned calibrating device has horizontal direction, and vertical direction, and azimuthal move mode are to calibrate the position of this first light shield and this second light shield.
12. method according to claim 11, it is characterized in that: after more being included in the end of the first line image field, first predetermined image field of the second predetermined line of this wafer of vertical scanning direction translation is in being stated (2) to (6) step by the irradiation position heavily to be covered with.
13. method according to claim 12 is characterized in that: after the image field that more is included in the second predetermined line was exposed, the image field that carries out more predetermined line was by irradiation, and finished to last predetermined image field of last line image field of this wafer.
14. method according to claim 13, it is characterized in that: after more being included in last horizontal last predetermined image field to image field and finishing, with this last image field, be initial line, with this first light shield and this second light shield serves as that complementary cover curtain carries out irradiation, and wherein above-mentioned complementary cover curtain is meant that if this image field has utilized this first light shield irradiation complementary cover curtain is just selected the complementary cover curtain of second light shield for use, if this image field has utilized this second light shield, it is that complementary cover curtain exposes with stack that complementary cover curtain is just selected first light shield for use.
15. method according to claim 9 is characterized in that: wherein in above-mentioned (2) and (4) step, wafer is with opposite reverse with light shield, synchronous shift.
16. the method for improving superimposed micro-image of the device of light shield putting flatwise device more than a kind, this method comprises following steps at least:
(1) provide a light shield putting flatwise device, so that this light shield putting flatwise device carries one first light shield and one second light shield simultaneously, this first light shield and second light shield are adjacent along the direction of scanning lengthening;
(2) locate the first predetermined image field of this wafer to the first line;
(3) utilize this first light shield and this second light shield for the cover curtain, wafer is carried out irradiation, to produce first image field and second image field respectively;
(4) be shifted this wafer to the 4th predetermined image field;
(5) utilize this second light shield and this first light shield for covering curtain to produce the 4th image field and the 3rd image field respectively, above-mentioned odd number image field is to utilize the exposure of first light shield, the even number image field is to utilize the exposure of second light shield, and after two light shield sequential scannings of this of this light shield putting flatwise device, the position of this light shield is the line position after this wafer translation at every turn;
(6) heavily cover step (3), (4), (5) to the predetermined image field end of a line;
(7) first predetermined image field of second of this wafer of the vertical scanning direction translation predetermined line is in by the irradiation position.
(8) heavily cover step (3), (4), (5) to last predetermined image field of this wafer by irradiation;
(9) translational movement of this light shield putting flatwise device one light shield of horizontal scan direction translation; And
(10) last the predetermined image field with this wafer is an initial line, and heavily to cover the first predetermined image field of step (3) to (8) to this wafer also by irradiation, therefore reaching each image field serves as the overlapping exposure of cover curtain with this first light shield and this second light shield all.
17. method according to claim 16 is characterized in that: in above-mentioned (2) and (10) step, wafer and light shield are and reverse direction synchronous shift.
18. the method for improving superimposed micro-image of the device of light shield putting flatwise device more than a kind, this method comprises following steps at least:
(1) provide a light shield putting flatwise device, so that this light shield putting flatwise device carries one first light shield and one second light shield simultaneously, this first light shield and second light shield are adjacent along the vertical scanning direction lengthening, therefore have only this first light shield in the scanning line;
(2) wafer is carried out the irradiation first time, will be produced first image field in proper order by each line of the direction of scanning, wafer upper edge of irradiation, each line of irradiation in regular turn is until the irradiation end of a period for the first time of this wafer;
(3) translational movement of this light shield putting flatwise device one light list of vertical scanning direction translation is so that this second light shield is being scanned the position so that carry out the irradiation second time of each image field; And
(4) heavily covering step (2), (3) has utilized this first light shield and one second light shield to expose twice for the cover curtain until each image field all.
19. method according to claim 18 is characterized in that: in above-mentioned (2) and (4) step, wafer and light shield are and reverse direction synchronous shift.
20. method according to claim 18, it is characterized in that: this each image field is according to behind the FEFO in the above-mentioned step (2), and this wafer needs earlier along direction of scanning translation one image field unit, after each line finishes, wafer needs elder generation along vertical scanning direction translation one image field unit, just carries out irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021061343A CN1228691C (en) | 2002-04-04 | 2002-04-04 | Multiply light shield putting flatwise device and method for improving superimposed micro-image |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021061343A CN1228691C (en) | 2002-04-04 | 2002-04-04 | Multiply light shield putting flatwise device and method for improving superimposed micro-image |
Publications (2)
| Publication Number | Publication Date |
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| CN1448800A true CN1448800A (en) | 2003-10-15 |
| CN1228691C CN1228691C (en) | 2005-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021061343A Expired - Lifetime CN1228691C (en) | 2002-04-04 | 2002-04-04 | Multiply light shield putting flatwise device and method for improving superimposed micro-image |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN103246158A (en) * | 2012-02-14 | 2013-08-14 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
-
2002
- 2002-04-04 CN CNB021061343A patent/CN1228691C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246158A (en) * | 2012-02-14 | 2013-08-14 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
| CN103246158B (en) * | 2012-02-14 | 2015-03-25 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN102608860B (en) * | 2012-03-26 | 2016-02-03 | 深圳市华星光电技术有限公司 | Lithographic methods, reticle combination and exposure system |
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| Publication number | Publication date |
|---|---|
| CN1228691C (en) | 2005-11-23 |
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Granted publication date: 20051123 |