CN1445060A - Burnishing device - Google Patents
Burnishing device Download PDFInfo
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- CN1445060A CN1445060A CN 03119891 CN03119891A CN1445060A CN 1445060 A CN1445060 A CN 1445060A CN 03119891 CN03119891 CN 03119891 CN 03119891 A CN03119891 A CN 03119891A CN 1445060 A CN1445060 A CN 1445060A
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- light
- pad
- polishing
- permeable window
- burnishing
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A burnishing device comprises a burnishing platform; a burnishing pad which is installed on the burnishing platform and has a burnishing surface for burnishing a workpiece to be burnished; a top ring used for fixing the workpiece and pressing the workpiece firmly to the burnishing pad; and an optical sensor which is mounted at the burnishing platform and is used for measuring thickness of films formed on the workpiece. Said burnishing pad comprises a gasket having a hole defined therein, a light-transmittable window disposed in the hole for allowing light to pass therethrough, and a supporting part used for prevent the light-transmittable window standing out of the burnishing surface of the burnishing platform.
Description
Technical field
The present invention relates to a kind of burnishing device, further relate to a kind of burnishing device, be used for buffer's workpiece (such as semiconductor substrate) to flat mirror fineness with polishing pad with polishing pad.
Background of invention
In the last few years, narrowed down and multilayer wiring, and therefore must allow the apparent height planarization of semiconductor substrate along with the high integration of semiconductor device requires wiring.Special in the highly intergrated semiconductor device meticulousr interconnection line caused in lithography, using and had more short wavelength's light, so just make use the shorter wavelength light time to substrate on the permissible difference that raises of focus become more and more littler.Therefore the difference of focus rising should reduce as far as possible.In other words, the surface of semiconductor substrate necessarily requires high planarization.The mode on the surface of planarization semiconductor substrate is to utilize the out-of-flatness thing (concave surface and convex surface) of chemico-mechanical polishing (CMP) method removal on semiconductor substrate surface in the prior art.
In chemical mechanical polishing method, on the surface of semiconductor substrate after polished a period of time, polishing process must be in the precalculated position or the scheduled time finish.Such as, some integrated circuit (IC) design requires the dielectric film (insulating barrier) of silicon dioxide or analog to stay on the metal interconnected circuit of copper, aluminium or analog.Because of metal level or other rete further are deposited in last handling process on the insulating barrier, this insulating barrier is known as the intermediate layer.In this case, if the semiconductor substrate excessive polishing, then Xia Fang metal level will be exposed on the burnishing surface.Therefore, polishing process need be finished with a kind of like this state, promptly makes the intermediate layer of predetermined thickness keep not polishing.
According to another polishing process, interconnection channel with certain pattern is formed at the surface of semiconductor substrate, after copper is deposited upon on the semiconductor substrate, fill up interconnection channel with copper or copper alloy, remove unwanted copper layer segment by means of chemico-mechanical polishing (CMP) method then.Particularly the copper layer on semiconductor substrate is by means of the chemical mechanical polishing method selective removal, only stay the copper layer in interconnection channel, more particularly, require to remove the copper layer up to the insulating layer exposing of silicon dioxide or analog till the surface beyond the interconnection channel.
In addition, in some cases, the interconnection channel that the prescribed route pattern is used is formed in the semiconductor substrate, be filled in the groove of this kind semiconductor substrate such as electric conducting materials such as copper or copper alloys, remove unwanted electric conducting material part on semiconductor substrate surface by means of chemical mechanical polishing method (CMP) then.When the copper layer by means of after chemical mechanical polishing method (CMP) polishing, must be under the copper layer on the semiconductor substrate be being stayed in the groove as the state of wired circuit selective removal, that is interconnection channel.Especially the lip-deep copper layer of semiconductor substrate need be removed until the insulating layer exposing of silicon dioxide or analog till on the polished surface beyond the interconnection channel.
In these cases, if semiconductor substrate by excessive polishing up to the copper layer in interconnection channel is removed in the lump together with insulating barrier, to such an extent as to the resistance of the circuit on this semiconductor substrate will raise and may must abandon semiconductor substrate like this, the result causes the ample resources consume.On the contrary, stay the copper layer on insulating barrier if polished semiconductor substrate is not enough, then the interconnection line on semiconductor substrate can't be separated from each other on request, causes short circuit on the contrary between interconnection line.As a result, need polishing semiconductor substrate once again, will improve its manufacturing cost like this.When being formed on the semiconductor substrate and polishing by means of chemical mechanical polishing method (CMP), the metal film of other layer of aluminum or analog also foregoing problems can take place.
Therefore, propose to use optical pickocff to detect the terminal point that chemical mechanical polishing method CMP handles, will comprise that particularly the optical pickocff of luminescence component and photodetection assembly is arranged in the burnishing device.The luminescence component of optical pickocff applies light to the burnishing surface of semiconductor substrate, and photodetection assembly detects from the reflection of light of burnishing surface reflection and changes, by means of insulating barrier or the metal layer thickness of this measurement on this burnishing surface.The film thickness of utilize measuring like this detect the terminal point handled of chemical mechanical polishing method (CMP).
In carrying out the burnishing device that chemical mechanical polishing method (CMP) handles, be installed in that lip-deep polishing pad has lower light transmittance usually on the polishing block.Therefore, in the time of will being applied to the burnishing surface that is arranged at the semiconductor substrate on the polishing block by the polishing pad below from the light of optical sensor, the light-permeable window with high light transmission allows light to pass through wherein.The light-permeable window is arranged in the polishing pad, is applied on the burnishing surface of semiconductor substrate via the light-permeable window from the light of optical sensor.
Fig. 1 amplifies cross-sectional view for part, and it shows the double-deck polishing pad that comprises the light-permeable window in the prior art.As shown in Figure 1, polishing pad 310 comprises upper strata pad 311 and lower floor's pad 312, upper strata pad 311 has hole 311a and the light-permeable window 341 that is arranged at wherein, light-permeable window 341 is arranged among the hole 311a of upper strata pad 311, lower floor's pad 312 has the optical channel hole 312a that is arranged at wherein, the diameter of optical channel hole 312a is less than hole 311a, has between hole 311a, the 312a of different-diameter a ladder 313 is set.
In the prior art, the manufacturing of polishing pad 310 is as follows: apply sticker to the lower surface of upper strata pad 311 and the upper surface of lower floor's pad 312, and upper strata pad 311 and lower floor's pad 312 are in vertical direction pressing each other, and therefore, upper strata pad 311 and lower floor's pad 312 are bonded to each other.Then, light-permeable window 341 is embedded among the 311a of hole, light-permeable window 341 is attached to lower floor's pad 312 by means of the sticker that puts on ladder 313 upper surfaces.
But, because of 341 upper surfaces at ladder 313 of light-permeable window are attached to lower floor's pad 312, thus its bonded area with and bond strength less.Therefore, light-permeable window 341 may be peeled off from polishing pad 310.According to the power that is applied to polishing pad 310, light-permeable window 341 possibly can't be peeled off fully, but also can partly peel off, so produce the gap between light-permeable window 341 and lower floor's pad 312 or ladder 313.The gap of Xing Chenging can make at the polishing fluid on the upper surface of polishing pad 310 and leak out on the lower surface of light-permeable window 341 like this.When polishing fluid adhered to the lower surface of light-permeable window 341, the reflectivity of light-permeable window 341 subtracted greatly, thereby was difficult to use optical pickocff to detect the variation of reflectivity of the burnishing surface of semiconductor substrate.In such cases, can't record the film thickness of semiconductor substrate with high accuracy.
If polishing fluid enters into the gap between light-permeable window 341 and the ladder 313, then owing to the swelling of polishing pad, the zone of elasticity inequality produces in polishing pad 310, and harmful effect will be caused to the polishing process of semiconductor substrate in this zone.In addition, if there is the polishing fluid of low light transmission to enter at random between light-permeable window 341 and the optical pickocff, then the signal that detects by means of optical pickocff becomes unstable, makes the result of detection unreliable.
As previously mentioned, light-permeable window 341 is installed among the hole 311a that is defined in the upper strata pad 311, and the area of hole 311a is slightly larger than the area of light-permeable window 341, to allow light-permeable window 341 be installed in easily among the 311a of hole.Therefore, after light-permeable window 341 has been arranged among the 311a of hole, a little gap 314 is arranged between light-permeable window 341 and hole 311a.Like this, polishing fluid enters in the little gap and sclerosis in little gap 314 easily, and the polishing fluid after the sclerosis may cause the upper surface that is placed on polishing pad 310 to get polished semiconductor substrate and form scratch.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of burnishing device with polishing pad, it makes the optical pickocff can be with the film thickness on the polished surface of high accuracy stably measured, and can prevent that polished surface is by scratch.
According to first aspect present invention, a kind of burnishing device is provided, comprising: a polishing block; One polishing pad is installed on this polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon; One apical ring is used for fixing this work package, and makes this work package press this polishing pad; And an optical pickocff, be arranged in this polishing block, in order to measure the film thickness that forms on this work package, this polishing pad comprises: a liner has a hole to be defined in wherein; One light-permeable window, it is arranged in this hole to allow light to pass through wherein; And a strutting piece, be used to prevent that this light-permeable window from protruding the burnishing surface at described polishing pad.
According to a preferred version of the present invention, this strutting piece is set at the lower surface of light-permeable window.
According to a preferred version of the present invention, this liner and light-permeable window adopt sticker to combine closely.
According to a preferred version of the present invention, strutting piece comprises a resiliency supported seal, and the polishing fluid that is provided to prevention on the burnishing surface of polishing pad is introduced in the middle of light-permeable window and the optical pickocff.
According to a preferred version of the present invention, polishing pad comprises that a upper strata pad and places the following lower floor's pad of upper strata pad.
According to a preferred version of the present invention, this strutting piece comprises a light-permeable supporter.
According to a preferred version of the present invention, this polishing pad further comprises a reinforcing element, and it is placed in the middle of light-permeable window and the light-permeable supporter, is bent under work package institute's applied pressure of polished time to prevent the light-permeable window.
According to a preferred version of the present invention, this reinforcing element has shape memory.
According to a preferred version of the present invention, this liner comprises that a upper strata pad and is positioned over the lower floor's pad under the pad of upper strata.
According to second aspect present invention, a kind of burnishing device is provided, comprising: a polishing block; One polishing pad is installed on the described polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon; One apical ring in order to fixing described work package, and makes described work package press described polishing pad, and an optical pickocff, be arranged in the described polishing block, in order to detect the terminal point that described work package is polished, described polishing pad comprises: a liner has a hole to be defined in wherein; One light-permeable window, it is arranged in the described hole, is used to make light to pass through wherein; Described liner and described light-permeable window adopt sticker to combine closely; Reach a strutting piece, be arranged at the lower surface of described light-permeable window, be used for after the finishing of described burnishing surface is handled, stoping the described burnishing surface of described light-permeable window protrusion at described polishing pad.
According to a preferred version of the present invention, strutting piece comprises a resiliency supported seal, is introduced in the middle of light-permeable window and the optical pickocff with the polishing fluid on the burnishing surface that prevents to be provided to polishing pad.
According to a preferred version of the present invention, strutting piece comprises a light-permeable supporter.
According to a preferred version of the present invention, polishing pad further comprises: a reinforcing element, it is placed in the middle of light-permeable window and the light-permeable supporter, is used to prevent that the light-permeable window is bent under work package institute's applied pressure of polished time.
According to a preferred version of the present invention, reinforcing element has shape memory.
According to the present invention, because the light-permeable window is firmly supported by strutting piece, thus this light-permeable window is difficult for to lower recess, thus after finishing dealing with, finishing stops the rat of light-permeable window at this polishing pad.This useful reality can prevent more effectively that together with the advantage that is provided by the light-permeable window made from flexible material work package is by scratch.
Because of the light-permeable window is supported by the support seal with excellent sealability, so any being penetrated into to the polishing fluid of the lower surface of light-permeable window can be minimized.Therefore, but the paramount quality fineness of this polishing pad buffer workpiece, optical pickocff can high accuracy the film thickness on the surface of surveying work spare stably.
According to third aspect present invention, a kind of burnishing device is provided, comprising: a polishing block; One polishing pad is installed on this polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon; One apical ring is used for fixing this polished work package, and makes this work package press this polishing pad; One optical pickocff is arranged in this polishing block, is formed at the thickness of the film on this work package in order to measurement, and this polishing pad comprises: a liner has a hole to be defined in wherein; One light-permeable window, it is arranged in this hole, and allows light to pass through wherein, and this liner and this light-permeable window adopt sticker to combine closely; One light-permeable supporter is arranged on the lower surface of this light-permeable window, protrudes on this burnishing surface of this polishing pad to stop this light-permeable window; And a reinforcing element, be arranged between this light-permeable window and this light-permeable supporter, be bent under this work package institute's applied pressure of polished time to prevent this light-permeable window, this reinforcing element has shape memory.
According to a preferred version of the present invention, polishing pad comprises a upper strata pad, wherein defines a hole, comprises that also one places the following lower floor's pad of upper strata pad, this lower floor's spacer has an optical channel hole that is defined in wherein, and its diameter diameter with the hole of upper strata pad basically is identical.
If light-permeable window bending under applied pressure when work package is accepted polishing, then there is the light of capacity to advance and may disperses to be the light-permeable window by light-permeable window or light, thereby can't be accurately and MEASUREMENTS OF THIN thickness stably.Be plugged between light-permeable window and the light-permeable strutting piece because of having highly flexual reinforcing element, strengthened so support the structure of light-permeable window, and prevent from when work package is polished, under applied pressure, to make this light-permeable window bending.In addition, because of reinforcing element has excellent adherence, that is reinforcing element can closely contact with another object, so optical system can be kept with high accuracy MEASUREMENTS OF THIN thickness stably.
According to a preferred version of the present invention, a kind of polishing pad is provided, it comprises: a upper strata pad has a hole to be defined in wherein; One light-permeable window, it is arranged in the hole of upper strata pad and allows light by wherein; One lower floor's pad, it is arranged at upper strata pad below, and has an optical channel hole and be defined in wherein, and the diameter in this hole diameter with the hole of upper strata pad basically is identical; And a film, it is plugged between upper strata pad and lower floor's pad.Preferably, apply the surface of sticker to film, these surfaces closely contact with the lower floor pad with the upper strata pad.
The whole lower surface of light-permeable window is kept with this transparent membrane and is contacted, so the whole lower surface of light-permeable window and transparent membrane combination.Because the bonded area of light-permeable window is greater than the bonded area of the light-permeable window of routine, so the bond strength of light-permeable window increases.Therefore, can prevent that the light-permeable window from peeling off from polishing pad.Like this, stop polishing fluid to be penetrated on the lower surface of light-permeable window, thereby but make the paramount quality finish of this polishing pad buffer workpiece.Simultaneously, optical pickocff can be stably with the film thickness on the surface of high accuracy surveying work spare.
Because of light-permeable window and lower floor's pad fully are separated from each other by means of transparent membrane, so can prevent that the polishing fluid of low transparency is introduced between light-permeable window and the optical pickocff, optical pickocff therefore can be stably with the film thickness on high accuracy surveying work spare surface.
According to a preferred version of the present invention, a kind of polishing pad is provided, it comprises: a liner has a hole to be defined in wherein; With a light-permeable window, it is arranged in this hole and allows light to pass through wherein, and the light-permeable window is made by the material more soft than the surface of this liner.
More soft because of the light-permeable window than the surface of liner, so when trimming polished pad, more be difficult for scratch light-permeable window, can avoid polished work package like this by this light-permeable window institute scratch.Because the light-permeable window is soft, behind trimming polished pad, even this light-permeable window projection on the surface of polishing pad, more impossible damage work package when buffer's workpiece.
According to the present invention, a kind of method of making polishing pad is provided, this method comprises: prepare a upper strata pad, wherein define a hole; Form one and allow the light-permeable window of light by therebetween, it is arranged in the hole of upper strata pad; Prepare lower floor's pad, wherein define an optical channel hole, the diameter in optical channel hole is substantially equal to the bore dia of upper strata pad; Under upper strata pad and the oriented state of lower floor's pad, plant a film between upper strata pad and lower floor's pad, be applied with sticker on the upper and lower surface of film, make optical channel hole in lower floor's pad be aligned in hole in the pad of upper strata; And and the pressurization relative with the lower floor pad and upper strata pad and lower floor's pad are bonded to each other by the film that is plugged on therebetween with the upper strata pad, preferably, forming process comprises the material injection is defined in the interior hole of upper strata pad.
Use preceding method, polishing pad there is no any gap and is created between light-permeable window and the upper strata pad, therefore, will not have any polishing fluid and hardens between light-permeable window and upper strata pad, can prevent work package like this because of the polishing fluid of sclerosis and cause scratch.
The present invention aforementioned and other purpose, feature and advantage can become clearer by the detailed description below in conjunction with accompanying drawing.Accompanying drawing illustrates the preferred embodiments of the present invention.
Brief Description Of Drawings
Accompanying drawing 1 is that the part of polishing pad in the prior art is amplified cross-sectional view;
Accompanying drawing 2 is the schematic diagram of configured in one piece of the burnishing device of first embodiment of the invention;
Accompanying drawing 3 is that the part of the polishing pad of first embodiment of the invention is amplified cross-sectional view;
Accompanying drawing 4 is the plane graph of the polishing block of the burnishing device shown in the accompanying drawing 2;
Accompanying drawing 5 is the vertical cross section figure of the consecutive steps of polishing pad preparation method shown in accompanying drawing 3 figure to accompanying drawing 8;
Accompanying drawing 9 is the stereogram of the burnishing device of another embodiment of the present invention;
Accompanying drawing 10 is that the part of the polishing pad of the second embodiment of the present invention is amplified cross-sectional view;
Accompanying drawing 11 is the bottom view of the polishing pad of accompanying drawing 10;
Accompanying drawing 12 is that the part of the polishing pad of the third embodiment of the present invention is amplified cross-sectional view;
Accompanying drawing 13 is that the part of the modification of polishing pad shown in the accompanying drawing 12 is amplified cross-sectional view;
Accompanying drawing 14 is that the part of another modification of polishing pad shown in accompanying drawing 12 figure is amplified cross-sectional view.
The preferred embodiment explanation
2 be described as follows to accompanying drawing 8 with reference to the accompanying drawings according to the burnishing device with polishing pad of the first embodiment of the present invention.
Accompanying drawing 2 is an end view, and it shows the part cross section according to the burnishing device of the first embodiment of the present invention.As shown in Figure 2, burnishing device comprises polishing block 20 and the apical ring 30 that is mounted thereon with polishing pad 10, and apical ring 30 is in order to fixed polished work package W semiconductor substrate and towards the upper surface pressurized operation part W of polishing pad 10 for example.The upper surface of polishing pad 10 is as burnishing surface, and this burnishing surface and polished semiconductor substrate W do sliding contact.Burnishing surface can be made up of the upper surface of fixed abrasive sheet in addition, and the upper surface of this abrasive sheet comprises the fine abrasive particle that ceria or analog are made and utilizes araldite to fix.
Item ring 30 is coupled to apical ring axle 31, and apical ring axle 31 is coupled to motor and lift cylinders (not shown).Apical ring 30 can be by means of the lift cylinders vertical moving like this, and by motor rotation around apical ring axle 31, indicated as accompanying drawing 2 arrows.Apical ring 30 flexible liners 32 are installed on its lower surface, and this cushion 32 is made by polyurethane and analog.Polished semiconductor substrate W attracts under vacuum for example and is clamped on the lower surface of cushion 32.When apical ring 30 rotation, the semiconductor substrate W that is clamped on the lower surface of cushion 32 compresses to polishing pad 10 under predetermined pressure.The lead ring 33 of apical ring 30 is provided with around its lower periphery, is used for fixing semiconductor substrate W and is got loose by apical ring 30 to avoid this semiconductor substrate W.
As shown in Figure 2, optical pickocff 40 is arranged on 20 li of polishing blocks, is formed at the lip-deep dielectric film (layer) of semiconductor substrate W or the film thickness of metal film (layer) in order to measurement.Optical pickocff 40 comprises luminescence component and photodetection assembly, the luminescence component irradiation of optical pickocff 4 is to the polished surface of semiconductor substrate W, and the photodetection assembly of optical pickocff 40 receives the reverberation from the surface of semiconductor substrate W, so just can measure lip-deep insulating barrier or the metal layer thickness of semiconductor substrate W.For instance, luminescence component can apply the surface from LED emitted laser bundle or light to semiconductor substrate.Under some situation, luminescence component can utilize white light.
Cylindrical light-permeable window 41 is installed on polishing pad 10 wherein, passes through wherein in order to the light of permission from optical pickocff 40, and for instance, light-permeable window 41 has footpath outside 18 millimeters.Accompanying drawing 3 amplifies cross-sectional view for the part that shows the polishing pad 10 that comprises light-permeable window 41, and as shown in Figure 3, polishing pad 10 is to comprise the double-deck polishing pad with upper strata pad 11 and lower floor's pad 12.For instance, this upper strata pad 11 is made by polyurathamc, and such as the IC-1000 that company of sieve Dell (Rodel) makes, lower floor's pad 12 is then made by non-woven, such as the SUBA400 of sieve Dell manufacturing.Light-permeable window 41 is preferable by the transparent material person of making, and specifically, this light-permeable window 41 also can be by high light transmittance being arranged as made without the polyurethane of foaming.Usually, upper strata pad 11 is made by hard material, and lower floor's pad 12 is made by the material more soft than upper strata pad 11.
As shown in Figure 3, upper strata pad 11 has the hole 11a that is defined in wherein, and light-permeable window 41 then is arranged among the hole 11a of upper strata pad 11.Lower floor's pad 12 has and is arranged at one of them optical channel hole 12a, and the diameter of optical channel hole 12a is substantially equal to the diameter of hole 11a.Transparent adhesive-film 13 is inserted between upper strata pad 11 and the lower floor's pad 12, and sticker puts on the upper surface and the lower surface of transparent adhesive-film 13.Upper strata pad 11 and lower floor's pad 12 are bonded to each other by means of transparent adhesive-film 13.This 13 of transparent adhesive-film can comprise the chip (core sheet) of thick 50 microns polyethylene terephthalate (PET) and the pressure-sensitive sticker of acrylic rubber, and it is applied in the upper surface and the lower surface of chip.
The whole lower surface of light-permeable window 41 contacts and fixing with this transparent adhesive-film 13, makes light-permeable window 41 whole lower surfaces be linked to transparent adhesive-film 13.Because of the bonded area of light-permeable window 41 bonded area, so the strength of connection of light-permeable window 41 increases greater than the light-permeable window of routine.Therefore, can prevent that light-permeable window 41 from peeling off from polishing pad 10.Like this, can prevent that polishing fluid Q from infiltrating into the lower surface of light-permeable window 41, like this, but polishing pad 10 polishing semiconductor substrate W are to high-quality polishing degree.Simultaneously, optical pickocff 40 can high accuracy be stably measured the film thickness on the surface of semiconductor substrate W.
Because of light-permeable window 41 and lower floor's pad 12 are complete separately by means of transparent adhesive-film 13 each other, can avoid being introduced between light-permeable window 41 and the optical pickocff 40 so have the polishing fluid Q of low light transmission.So make optical pickocff 40 can stably measure the film thickness on the surface of semiconductor substrate W with high accuracy.
Accompanying drawing 4 is the plane graph of the polishing block 20 of the burnishing device shown in the accompanying drawing 2.As shown in Figure 4, polishing block 20 has individual center C
T, polishing block 20 has geometric center C by the semiconductor substrate W of 30 fixings of apical ring around this center and rotate
W Optical pickocff 40 is arranged in the polishing block 20, so that the geometric center C by the semiconductor substrate W that fixed by apical ring 30
W, simultaneously rotary finishing platform 20 and polishing semiconductor substrate W.Though optical pickocff 40 moves below semiconductor substrate W, optical pickocff 40 can be along the bow-shaped route (center C that comprises semiconductor substrate W
W) film thickness of burnishing surface of continuous detecting semiconductor substrate W.In order to shorten interval detection time of film thickness, can add another optical pickocff 40 as the indication of accompanying drawing 4 dotted lines, allow at least two optical pickocffs in order to detect film thickness.
When polishing block 20 turned around, the light of the luminescence component of optical pickocff 40 emission passed through light-permeable window 41, and is applied on the burnishing surface of semiconductor substrate W.The light that applies is reflected by the burnishing surface of semiconductor substrate W, and the photodetection assembly by optical pickocff 40 detects then.Photodetection assembly by means of optical pickocff 40 changes into the signal of telecommunication to the light that detection obtains, and this signal of telecommunication is handled by controller 44, with the film thickness of the burnishing surface that is used for measuring semiconductor substrate W.
The principle of the film thickness of the insulating barrier of use optical pickocff detected silica or analog or the metal level of copper, aluminium or analog will be simply described as follows.The measurement of using the film thickness of optical pickocff is to utilize by top layer and the interference of light that medium caused of adjoining top layer, especially refer to when light puts on film on the substrate, part light is by the surface reflection of film, remaining light then passes through film, part is passed through surface or the substrate reflection of the light of film by bottom then, and all the other light are by this bottom or this substrate simultaneously.In such cases, when bottom was made by metal, remaining light was absorbed by bottom, come from the light that the surface of film reflects and come from lower floor or light that the surface of this substrate is reflected between phase difference constitute and interfere.When the same each other phase time of light that the surface of the light that reflects from the surface of film and this lower floor or substrate is reflected, luminous intensity increases; During out-phase, luminous intensity lowers the light that reflects when the surface of the light that reflects from the surface of this film and this lower floor or substrate each other.Like this, the intensity of reflection is different because of the refractive index of incident light wavelength, film thickness and film.Light by substrate reflection separates by diffraction grating or analog, describes a profile by the mensuration to the catoptrical intensity of each wavelength, and by the analysis of this profile being measured the thickness of the film on the substrate.
In the spendable optical pickocff of another kind, monochromatic light (having single wavelength light) or white light put on the film on substrate, and based on the photo measure reflectivity of reflection, lip-deep reflectivity that this reflectivity is included in film and combination at the lip-deep reflectivity of bottom or substrate.Because of reflectance changes with the thickness of polished film and the difference of type, so can detect the terminal point of polishing by the variation that monitors reflectivity.
A kind of method of making polishing pad 10 5 is described as follows to accompanying drawing 8 with reference to the accompanying drawings.
(1) as shown in Figure 5, the upper strata pad 11 that preparation is made by polyurathamc, and hole 11a is formed at the assigned address of upper strata pad 11.
(2) as shown in Figure 6, be infused in without polyurathamc 14 among the hole 11a of upper strata pad 11, and merge (binding) to upper strata pad 11.Like this, light-permeable window 41 is by made without the polyurethane of foaming among the 11a of hole.In addition, have in shape and can separate manufacturing with upper strata pad 11, chimericly then go in the 11a of the hole of this upper strata pad 11 light-permeable window 41 that should hole 11a.
(3) as shown in Figure 7, the upper strata pad 11 of manufacturing and light-permeable window 41 are cut into 1.9 millimeters appointed thickness thus.
(4) having the optical channel hole 12a that diameter equates with hole 11a in fact is formed in lower floor's pad 12.Then, the transparent adhesive-film 13 that has sticker to be applied thereto surface and lower surface is inserted between upper strata pad 11 and the lower floor's pad 12, as shown in Figure 8.In this situation, make optical channel hole 12a in lower floor's pad 12 be aligned in the hole 11a in the upper strata pad 11 lower floor's pad 12 and upper strata pad 11 location.In the polishing pad of prior art, groove is arranged in upper strata pad 11 and the lower floor's pad 12, and groove is aligned with each other thereby upper strata pad and lower floor's pad can be positioned the appropriate location.But, according to the present invention, because of optical channel hole 12a in lower floor's pad 12 has and the substantially the same diameter of hole 11a in upper strata pad 11,, so need not in upper strata pad and lower floor's pad, groove to be set so these holes can be used for upper strata pad 11 and lower floor's pad 12 are positioned the appropriate location.
(5) then, with the pressing that is perpendicular to one another of upper strata pad 11 and lower floor's pad 12, make it bonded to each other by means of transparent adhesive-film 13.So just can finish the polishing pad 10 shown in the accompanying drawing 3.
When hole 11a formed light-permeable window 41, polishing pad 10 did not produce the gap between light-permeable window 41 and upper strata pad 11 without polyurathamc 14 injects the hole 11a of upper strata pad 11.Therefore, the sclerosis of polishing fluid between light-permeable window 41 and upper strata pad 11, can not occur, can avoid the scratch that polishing fluid caused of semiconductor substrate W like this because of solidifying.
The operating instruction of the burnishing device that polishing semiconductor substrate W uses is as follows.
The semiconductor substrate W that is fixed on the lower surface of apical ring 30 compresses polishing pad 10 on the upper surface of the polishing block 20 that has rotated, at this moment, polishing fluid Q supplies on the polishing pad 10 from polishing liquid supply nozzle 22.Therefore, utilize polishing fluid Q to semiconductor substrate W polishing, and polishing fluid Q appear between polished lower surface of semiconductor substrate W and the polishing pad 10.
When substrate W in this way and when polishing, at every turn when polishing block 20 revolutions one time, optical pickocff 40 directly pass through substrate W polished surface under.Because of optical pickocff 40 is positioned at center C by semiconductor substrate W
WBow-shaped route, optical pickocff 40 can be along the film thickness of the burnishing surface of the bow-shaped route continuous detecting semiconductor substrate W of semiconductor substrate W.Particularly make the light of launching from the luminescence component of optical pickocff 40 by optical channel hole 12a and light-permeable window 41 lower floor's pad 12, and the burnishing surface of arrival semiconductor substrate W.The burnishing surface of semiconductor substrate W reflects the light that has applied then, and the light of this reflection is received by the photodetection assembly of optical pickocff 40.Deliver to controller 44 from the signal of optical pickocff 40 outputs, controller 44 is measured the film thickness of the burnishing surface of semiconductor substrate W.Signal from optical pickocff 40 is handled and monitored to controller 44, when so just can detect that the film on the burnishing surface of semiconductor substrate W has been polished to predetermined thickness, therefore, so just can determine the terminal point of chemical mechanical polishing method CMP processing.Optical pickocff 40 can be arranged on the crooked route, and the center C of semiconductor substrate W is not passed through in this path
W
In the present embodiment, polishing pad 10 comprises two-layer pad.Yet polishing pad 10 can include the multilayer mats more than three layers or three layers.When polishing pad 10 comprised this multilayer mats, the position that transparent adhesive-film can be provided with made it be fixed and contacts the lower surface of light-permeable window.In this case, the rete that is positioned at transparent adhesive-film top is as the upper strata pad, and the rete that is positioned at transparent adhesive-film below is then as lower floor's pad.Therefore the present invention can be applicable to this multilayer mats.
In the present embodiment, the polishing pad that is installed on the polishing block is used for buffer's workpiece, but the present invention also is applicable to the burnishing device of another type.For example, the present invention is applicable to the burnishing device with banded polishing pad 51 that burnishing surface is provided as shown in Figure 9.In burnishing device shown in the accompanying drawing 9, banded polishing pad that is have abrasive grains in its lip-deep belt body 51, belt body 51 is wound on two rotary drums that separate 52,53.Rotary drum 52,53 rotates and moves belt body 51 in arrow 54 direction indications with circus movement or linear reciprocating motion, supports base 55 at band on the belt body 51 and down between the band.56 fixing semiconductor substrate W are pressed against by means of the zone of supporting the belt body 51 that base 55 is supported by apical ring.So just can make the surface of semiconductor substrate W polished by means of belt body 51.Support that base 55 has optical pickocff (not shown) to be embedded at wherein, this optical pickocff applies light to the semiconductor substrate W that is fixed by apical ring 56, and detects the reverberation of semiconductor substrate W.Based on the reverberation that optical pickocff detects, can measure the insulating barrier on the burnishing surface of semiconductor substrate W or the film thickness of metal level, this belt body 51 has light-permeable window 41 in the position of corresponding optical pickocff and is incorporated into wherein.
With reference to the accompanying drawings 10 and the polishing pad of accompanying drawing 11 explanation second embodiment of the invention as follows.Accompanying drawing 10 is the part amplification profile diagram, and it shows the polishing pad of second embodiment of the invention, and accompanying drawing 11 is the bottom view of polishing pad shown in the accompanying drawing 10.In accompanying drawing 10 and accompanying drawing 11, similarly parts and element indicate similar elements numeral and the symbol as first embodiment, in explanation no longer individually herein.
Among first embodiment, light-permeable window 41 is made by the hard polyaminoester identical with upper strata pad 11 (IC-1000).Therefore, when the surface of polishing pad 10 during, the possible scratch in the surface of light-permeable window 41, when the scratch that the surface produced of light-permeable window 41 may be at polished semiconductor substrate, in semiconductor substrate, cause scratch by means of trimmer finishing (regeneration).
Moreover in first embodiment, end is only supported (with reference to the accompanying drawings 3) by means of transparent adhesive-film 13 under the light-permeable window 41.As a result, when polishing pad 10 was repaired by means of trimmer, wipeed off by means of trimmer on the surface of polishing pad 10, under the elastic reaction of transparent adhesive-film 13 this light-permeable window 41 is moved down simultaneously.After polishing pad 10 is by means of the trimmer finishing, light-permeable window 41 upwards pushes back light-permeable window 41 under the elastic reaction of transparent adhesive-film 13, therefore the rat of light-permeable window 41 is higher than the surface of polishing pad 10, reaches the identical distance of being removed by polishing pad 10 of thickness.Because of light-permeable window among first embodiment 41 is made by hard material, if semiconductor substrate polishes under the state on the surface of polishing pad 10 in light-permeable window 41 projectioies with polishing pad 10, then semiconductor substrate quite may be impaired because of the light-permeable window 41 of projection.
According to second embodiment, polishing pad 110 has light-permeable window 141, and it is made by the more soft material of material (IC-1000) than upper strata pad 11, or by softer and make preferable than lower floor's pad 12 harder materials than upper strata pad 11.Light-permeable window 141 places the hole 11a of upper strata pad 11, and light-permeable window 141 is made preferable by transparent material.Because of light-permeable window 141 is softer than upper strata pad 11,, so prevent the semiconductor substrate of scratch acceptance polishing by means of light-permeable window 141 so when polishing pad 110 was accepted finishing, the light-permeable window more was difficult for scratch.Because of light-permeable window 141 is soft, even after polishing pad 110 finishings, these light-permeable window 141 projectioies are higher than the surface of polishing pad 110, and when semiconductor substrate was accepted polishing, the possibility of its damage semiconductor substrate was littler.
Among second embodiment, shown in the accompanying drawing 10, the high flexibility with excellent sealability supports seal 120 to be arranged at light-permeable window 141 belows in order to support light-permeable window 141.As shown in Figure 11, support that seal 120 is an annular shape, and be installed within the optical channel hole 12a in lower floor's pad 12 on the side face that this support seal 120 is by having excellent sealability and flexible sticker is made.
Because of light-permeable window 141 is supported by the support seal 120 with excellent sealability, so can lip-deep polishing fluid minimizes under the light-permeable window 141 with infiltrating into.Therefore, but polishing pad 110 polishing semiconductor substrates to high-quality polishing degree, and optical pickocff can high accuracy be stably measured the film thickness on the surface of semiconductor substrate.In addition, because of supporting that seal 120 can prevent effectively that the low polishing fluid of light transmission is introduced between light-permeable window 141 and the optical pickocff, so optical pickocff can be stably with high accuracy MEASUREMENTS OF THIN thickness.In addition, because of light-permeable window 141 supports seal 120 firmly to support by high flexibility, so when polishing pad 110 finishings, light-permeable window 141 is more difficult to lower recess, so after finishing is finished dealing with, can avoid light-permeable window 141 projectioies to be higher than the surface of polishing pad 110.This fact is made the advantage that is provided together with light-permeable window 141 by flexible material, can prevent more effectively that semiconductor substrate is by scratch.
Among second embodiment, light-permeable window 141, upper strata pad 11 and lower floor's pad 12 are connected to each other by means of the sticker 130 that excellent sealability is arranged, and make not form the gap between light-permeable window 141, upper strata pad 11 and lower floor's pad 12.Therefore, polishing fluid can not harden the polishing fluid scratch that can avoid semiconductor substrate to be hardened like this between light-permeable window 141, upper strata pad 11 and lower floor's pad 12.
Polishing pad according to third embodiment of the invention 12 is described as follows with reference to the accompanying drawings.In the accompanying drawing 12, similarly parts and element indicate same components numeral and the symbol as first embodiment, in hereinafter explanation no longer individually.
As shown in Figure 12, polishing pad according to the 3rd embodiment has the light-permeable window of being supported by light-permeable supporter 220 241, this light-permeable supporter 220 is made by acrylic resin, polyethylene gel, polyvinyl resin or analog, and this light-permeable window 241 and/or light-permeable support 220 are preferable to be made by transparent material.There are height pliability and excellent adhesive reinforcing element 230 to be inserted between light-permeable window 241 and the light-permeable supporter 220.For instance, reinforcing element 230 has 1 to 2 refractive index, this reinforcing element 230 can be made by the frozen glue shape elastomer of thick 1.27 millimeters (50 mils), and light-permeable window 241, reinforcing element 230 and a kind of optical system that for example has refractive index 1.4 of light-permeable supporter 220 common compositions, as shown in Figure 12.By laser beam sources emission have wavelength 800 how the laser beam of rice put on semiconductor substrate polishing pad on 6 degree to the angular ranges of 48 degree via optical system with respect to vertical direction, thereby the film thickness of measurement semiconductor substrate.
If the light-permeable window is exerted pressure crooked down when the polishing semiconductor substrate, enough light then can't be arranged by this light-permeable window, perhaps light may be dispersed in the light-permeable window, so can't accurately reach MEASUREMENTS OF THIN thickness stably.For instance, be used as abrasive grains,, and make foregoing problems become more obvious then because of the more unlikely arrival semiconductor substrate of light if the about 0.2 micron ceria of average diameter grinds slurry.In the present embodiment, be inserted between light-permeable window 241 and the light-permeable supporter 220 because of having highly flexual reinforcing element 230, so be used to support that the structure of light-permeable window 241 obtains to strengthen, light-permeable window 241 is crooked under applied pressure when preventing the polishing semiconductor substrate, and preferably, this reinforcing element 230 has the pliability that equates with pad 12 (SUBA400) of lower floor basically.
In addition, because of reinforcing element 230 has excellent adherence, that is reinforcing element 230 can closely contact another object, and optical system can be kept with high accuracy MEASUREMENTS OF THIN thickness stably like this.Preferably reinforcing element 230 is with the person that can not produce the bubble, may make light scattering by wherein because be formed at wherein bubble.Reinforcing element 230 preferably can be replied its original shape (shape memory) after distortion.For instance, this reinforcing element 230 is preferably made by the elastomer with shape memory, as polyester elastomer.
In accompanying drawing 12, reinforcing element 230 is supported on the protuberance 220a of the upper surface that is arranged at light-permeable supporter 220.Yet this light-permeable supporter 220 can not have protuberance, and as shown in Figure 13, reinforcing element 230 can directly be supported on the upper surface of light-permeable supporter 220.The footpath is not to only limit to shown in accompanying drawing 12 and the accompanying drawing 13 outside the reinforcing element 230, also can be identical with the external diameter of light-permeable window 241 and light-permeable supporter 220, and shown in accompanying drawing 14 figure.For more accurate MEASUREMENTS OF THIN thickness, the light of xenon or the emission of halogen light electron gun can be vertically to be applied on the semiconductor substrate substantially, in order to MEASUREMENTS OF THIN thickness, shown in accompanying drawing 13 and accompanying drawing 14.The light of xenon or the emission of halogen light electron gun has a plurality of frequencies.
In second and third embodiment, polishing pad comprises two-layer pad.Yet this polishing pad also can be three layers or the more multilayer mats or the single-layer pad of multiple film layer.
Though shown in detail and some preferred embodiments of the present invention be described, must be clear that, in the scope that does not deviate from the claims of enclosing, can make different modifications and changes.
Industrial applicability
The present invention preferably is applied to have polishing pad and is used for buffer's workpiece (such as semiconductor Substrate) to flat mirror fineness burnishing device.
Claims (16)
1, a kind of burnishing device comprises:
One polishing block;
One polishing pad is installed on the described polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon;
One apical ring is used for fixing described work package, and makes described work package press described polishing pad; And
One optical pickocff is arranged in the described polishing block, and in order to measure the film thickness that forms on described work package, described polishing pad comprises:
One liner has a hole to be defined in wherein;
One light-permeable window, it is arranged in the described hole to allow light to pass through wherein; And
One strutting piece is used to prevent that described light-permeable window from protruding the burnishing surface at described polishing pad.
2, a kind of burnishing device according to claim 1, wherein, described strutting piece is arranged on the lower surface of described light-permeable window.
3, a kind of burnishing device according to claim 2, wherein, described liner and described light-permeable window adopt sticker to combine closely.
4, a kind of burnishing device according to claim 3, wherein, described strutting piece comprises a resiliency supported seal, is imported between described light-permeable window and the described optical pickocff with the polishing fluid on the described burnishing surface that prevents to be provided to described polishing pad.
5, a kind of burnishing device according to claim 4, wherein, described polishing pad comprises that a upper strata pad and places the following lower floor's pad of described upper strata pad.
6. a kind of burnishing device according to claim 3, wherein, described strutting piece comprises a light-permeable supporter.
7, a kind of burnishing device according to claim 6, wherein, described polishing pad further comprises a reinforcing element, it is arranged between described light-permeable window and the described light-permeable supporter, is bent under described work package institute's applied pressure of polished time to prevent described light-permeable window.
8, a kind of burnishing device according to claim 7, wherein, described reinforcing element has shape memory.
9, a kind of burnishing device according to claim 8, wherein, described liner comprises that a upper strata pad and is positioned over the lower floor's pad under the pad of described upper strata.
10, a kind of burnishing device comprises:
One polishing block;
One polishing pad is installed on the described polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon;
One apical ring in order to fixing described work package, and makes described work package press described polishing pad, and
One optical pickocff is arranged in the described polishing block, and in order to detect the terminal point that described work package is polished, described polishing pad comprises:
One liner has a hole to be defined in wherein;
One light-permeable window, it is arranged in the described hole, is used to make light to pass through wherein; Described liner and described light-permeable window adopt sticker to combine closely; And
One strutting piece is arranged at the lower surface of described light-permeable window, is used for stoping after the finishing of described burnishing surface is handled the described burnishing surface of described light-permeable window protrusion at described polishing pad.
11, a kind of burnishing device according to claim 10, wherein, described strutting piece comprises a resiliency supported seal, is directed between described light-permeable window and the described optical pickocff to prevent the polishing fluid that is provided to the described burnishing surface on the described polishing pad.
12, a kind of burnishing device according to claim 10, wherein, described strutting piece comprises a light-permeable supporter.
13, a kind of burnishing device according to claim 1, wherein, described polishing pad further comprises a reinforcing element, it is placed between described light-permeable window and the described light-permeable supporter, is used to prevent that described light-permeable window is bent under described work package institute's applied pressure of polished time.
14, a kind of burnishing device according to claim 13, wherein, described reinforcing element has shape memory.
15, a kind of burnishing device comprises:
One polishing block;
One polishing pad is installed on the described polishing block, and has the burnishing surface that is used to treat the polishing of buffer's workpiece thereon;
One apical ring is used for fixing described polished work package, and makes described work package press described polishing pad;
One optical pickocff is arranged in the described polishing block, is formed at the thickness of the film on the described work package in order to measurement, and described polishing pad comprises:
One liner has a hole to be defined in wherein;
One light-permeable window, it is arranged in the described hole, and allows light to pass through wherein, and described liner and described light-permeable window adopt sticker to combine closely;
One light-permeable supporter is arranged on the lower surface of described light-permeable window, protrudes on the described burnishing surface of described polishing pad to stop described light-permeable window; And
One reinforcing element is arranged between described light-permeable window and the described light-permeable supporter, is bent under described work package institute's applied pressure of polished time to prevent described light-permeable window, and described reinforcing element has shape memory.
16, a kind of burnishing device according to claim 15, wherein, described liner comprises, one upper strata pad, wherein define a hole, also comprise lower floor's pad, it is arranged at the following of described upper strata pad and defines an optical channel hole therein, and the diameter in described optical channel hole is substantially the same with the described bore dia of described upper strata pad.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002062270 | 2002-03-07 | ||
| JP2002062270A JP4131632B2 (en) | 2001-06-15 | 2002-03-07 | Polishing apparatus and polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1445060A true CN1445060A (en) | 2003-10-01 |
Family
ID=28034843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03119891 Pending CN1445060A (en) | 2002-03-07 | 2003-03-07 | Burnishing device |
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| Country | Link |
|---|---|
| CN (1) | CN1445060A (en) |
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| CN101905438A (en) * | 2010-07-13 | 2010-12-08 | 厦门大学 | Polishing pressure detection device for heavy-calibre element |
| CN101400479B (en) * | 2006-03-27 | 2010-12-15 | 飞思卡尔半导体公司 | Polishing pad and polishing apparatus |
| CN102452040A (en) * | 2010-10-29 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing memory effect of chemical mechanical grinding equipment of fixed abrasive particles |
| CN102554766A (en) * | 2004-12-10 | 2012-07-11 | 东洋橡胶工业株式会社 | Polishing pad and manufacturing method of the same |
| CN101660896B (en) * | 2009-09-23 | 2013-04-17 | 中国电子科技集团公司第四十五研究所 | Semiconductor wafer film thickness detecting device on basis of infrared optical interference method |
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| CN110997232A (en) * | 2017-08-04 | 2020-04-10 | 应用材料公司 | Polishing pad with window and method of manufacturing the same |
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| CN102554766A (en) * | 2004-12-10 | 2012-07-11 | 东洋橡胶工业株式会社 | Polishing pad and manufacturing method of the same |
| CN102554766B (en) * | 2004-12-10 | 2014-11-05 | 东洋橡胶工业株式会社 | Polishing pad and manufacturing method of the same |
| CN101400479B (en) * | 2006-03-27 | 2010-12-15 | 飞思卡尔半导体公司 | Polishing pad and polishing apparatus |
| CN101660896B (en) * | 2009-09-23 | 2013-04-17 | 中国电子科技集团公司第四十五研究所 | Semiconductor wafer film thickness detecting device on basis of infrared optical interference method |
| CN101905438A (en) * | 2010-07-13 | 2010-12-08 | 厦门大学 | Polishing pressure detection device for heavy-calibre element |
| CN102452040A (en) * | 2010-10-29 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing memory effect of chemical mechanical grinding equipment of fixed abrasive particles |
| CN103506935A (en) * | 2012-06-20 | 2014-01-15 | 不二越机械工业株式会社 | Workpiece grinding apparatus |
| CN106863104A (en) * | 2015-10-01 | 2017-06-20 | 株式会社荏原制作所 | Lapping device |
| CN106903810A (en) * | 2015-10-21 | 2017-06-30 | 株式会社迪思科 | Topping machanism |
| CN106903810B (en) * | 2015-10-21 | 2020-02-21 | 株式会社迪思科 | Cutting device |
| US11986922B2 (en) | 2015-11-06 | 2024-05-21 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| CN108527010A (en) * | 2017-03-06 | 2018-09-14 | 株式会社荏原制作所 | Grinding method, grinding device, base plate processing system and recording medium |
| CN108527010B (en) * | 2017-03-06 | 2021-09-10 | 株式会社荏原制作所 | Polishing method, polishing apparatus, and substrate processing system |
| CN110997232A (en) * | 2017-08-04 | 2020-04-10 | 应用材料公司 | Polishing pad with window and method of manufacturing the same |
| CN110997232B (en) * | 2017-08-04 | 2022-05-13 | 应用材料公司 | Polishing pad with window and method of manufacturing the same |
| CN110509178A (en) * | 2019-09-17 | 2019-11-29 | 清华大学 | A kind of cmp method for semiconductor substrate, device |
| CN110509178B (en) * | 2019-09-17 | 2021-08-10 | 清华大学 | Chemical mechanical polishing method and device for semiconductor substrate |
| CN113478382A (en) * | 2021-07-20 | 2021-10-08 | 湖北鼎汇微电子材料有限公司 | Detection window, chemical mechanical polishing pad and polishing system |
| CN113478382B (en) * | 2021-07-20 | 2022-11-04 | 湖北鼎汇微电子材料有限公司 | Detection window, chemical mechanical polishing pad and polishing system |
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