CN1444265A - Device for depositing insulating layer in grooved channel - Google Patents
Device for depositing insulating layer in grooved channel Download PDFInfo
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- CN1444265A CN1444265A CN 02107115 CN02107115A CN1444265A CN 1444265 A CN1444265 A CN 1444265A CN 02107115 CN02107115 CN 02107115 CN 02107115 A CN02107115 A CN 02107115A CN 1444265 A CN1444265 A CN 1444265A
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- groove
- high density
- plasma enhanced
- enhanced chemical
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Abstract
This invention provides a device for depositing an isoaltion layer on a groove, suitable for forming a crystal with groove on a basis including: a high density electric pulp chemical gas phase deposition chamber for depositing a first isoaltion layer in the said groove not fully filled a hydrofluoric acid vapour etching chamber aojacent to the said chamber for removing part of the isolation layer to form the first isolation layer remained on the groove bottom and expose the said groove sidewall above the isolation layer, a second electric pulp chemical gas phase deposition chamber adjacent to the said etching chamber for depositing a second isolation layer and fully filling the said groove to form holeless groove isolation layer.
Description
Technical field
Present invention is directed to a kind of device of manufacture of semiconductor, be particularly to the device of a kind of depositing insulating layer in groove.
Background technology
At present in the processing procedure in the industry cycle,, often use a kind of high density plasma enhanced chemical vapor deposition (HDP-CVD) technology nationality to insert the effect of groove to improve oxide layer (being insulating barrier) for the step covering power of the deposition technique that promotes groove.In the processing procedure that forms shallow groove isolation layer (STI), it is insulating barrier will be filled up groove that a step is arranged, and known way is in a high density plasma enhanced chemical vapor deposition device, inserts groove with high density plasma enhanced chemical vapor deposition processing procedure once.
Yet, please refer to Fig. 1, Fig. 1 is the shortcoming schematic diagram of known way, for groove with narrow opening (openspacing) and/or high-aspect-ratio (high aspect ratio), known way has the generation that produces hole 20 phenomenons in insulating barrier 19, for example when the A/F of this groove 15 less than 0.15 μ m and/or depth-to-width ratio greater than 4 the time, the then present insulating barrier 19 that is deposited with high density plasma enhanced chemical vapor deposition program just is easy to have the generation of hole 20, and influences the insulation characterisitic of shallow channel isolation area.In addition, the symbol 12 among Fig. 1 is the expression shielding layer, and symbol 10 is the semiconductor-based end of expression.
Summary of the invention
In view of this, purpose of the present invention has been to address the above problem and the device of a kind of depositing insulating layer in groove is provided, and is applicable to form fluted wafer in substrate, and this device comprises at least: a wafer is written into the chamber, in order to keep in this wafer; One first high density plasma enhanced chemical vapor deposition chamber is adjacent to this wafer and is written into the chamber, in order to this wafer is implemented deposition one first insulating barrier in this groove, does not still fill up this groove; One hydrofluoric acid vapor etching chamber, be adjacent to this first high density plasma enhanced chemical vapor deposition chamber, form remaining this first insulating barrier that remains in this channel bottom in order to this wafer is implemented removal this first insulating barrier of part, and expose this trenched side-wall that is positioned at remaining this first insulating barrier top; One second high density plasma enhanced chemical vapor deposition chamber is adjacent to this hydrofluoric acid vapor etching chamber, in order to this wafer is implemented deposition one second insulating barrier and filled up this groove; And one wafer carry out the chamber, be adjacent to this second high density plasma enhanced chemical vapor deposition chamber.
Wherein, the device of this depositing insulating layer in groove can more comprise: one first silicon alkane gas source of supply device connects this first high density plasma enhanced chemical vapor deposition chamber; One first blunt gas source of supply device connects this first high density plasma enhanced chemical vapor deposition chamber; One first oxygen supply source apparatus connects this first high density plasma enhanced chemical vapor deposition chamber; And one first gas control system, between these first gas supply source devices and this first high density plasma enhanced chemical vapor deposition chamber, enter indoor flow of this first high density plasma enhanced chemical vapor deposition and time in order to control these first gases.
Wherein, the device of this depositing insulating layer in groove can more comprise again: a hydrofluoric acid vapor source of supply device connects this hydrofluoric acid vapor etching chamber; And a hydrofluoric acid vapor control system, between this hydrofluoric acid vapor source of supply device and this hydrofluoric acid vapor etching chamber, enter flow and time in this hydrofluoric acid vapor etching chamber in order to control this hydrofluoric acid vapor.
Wherein, the device of this depositing insulating layer in groove can more comprise again again: one second silicon alkane gas source of supply device connects this second high density plasma enhanced chemical vapor deposition chamber; One second blunt gas source of supply device connects this second high density plasma enhanced chemical vapor deposition chamber; One second oxygen supply source apparatus connects this second high density plasma enhanced chemical vapor deposition chamber; And one second gas control system, between these second gas supply source devices and this second high density plasma enhanced chemical vapor deposition chamber, enter indoor flow of this second high density plasma enhanced chemical vapor deposition and time in order to control these second gases.
The device of depositing insulating layer in groove according to the invention described above, owing to form remaining this first insulating barrier that remains in this channel bottom at this hydrofluoric acid vapor etching chamber, thereby reduced the original depth-to-width ratio of this groove, make the deposition manufacture process that can easily reach no hole (void-free) groove in this second high density plasma enhanced chemical vapor deposition chamber.Just in device of the present invention, can deposit first insulating barrier, this first insulating barrier of etching part continuously and deposit processing procedures such as second insulating barrier, and easily finish processing procedure, and can avoid issuable particulate problem in the processing procedure effectively with high-aspect-ratio and imperforate trench dielectric layer.
Description of drawings
Fig. 1 is the shortcoming schematic diagram that shows prior art method;
Fig. 2 shows the schematic representation of apparatus of depositing insulating layer of the present invention in groove;
Fig. 3 to Fig. 5 shows the each several part schematic representation of apparatus that the device of depositing insulating layer of the present invention in groove is included;
Fig. 6 to Fig. 9 is the groove processing procedure schematic diagram that shows the device of corresponding depositing insulating layer of the present invention in groove.
Embodiment
Please refer to Fig. 2～9 figure, Fig. 2 shows the schematic representation of apparatus of depositing insulating layer of the present invention in groove; Fig. 3, Fig. 4, Fig. 5 show the included each several part schematic representation of apparatus of the device of depositing insulating layer of the present invention in groove; Fig. 6, Fig. 7, Fig. 8, Fig. 9 are the groove processing procedure schematic diagram that shows the device of corresponding depositing insulating layer of the present invention in groove.
At first, please refer to Fig. 2 and Fig. 6, the invention provides the device 200 of a kind of depositing insulating layer in groove, be applicable to the processing wafer 201 that is formed with groove 610 in substrate 600 as shown in Figure 6, wherein symbol 620 is an expression shielding layer pattern.And the device 200 of this depositing insulating layer in groove includes a wafer and is written into chamber (load) 210, in order to temporary this wafer 201.
Then, please refer to Fig. 2 and Fig. 7, this device 200 includes one first high density plasma enhanced chemical vapor deposition chamber 220, is adjacent to this wafer and is written into chamber 210, in order to this wafer 201 is implemented deposition one first insulating barrier 710 in this groove 610, still do not fill up this groove 610.Wherein this first insulating barrier 710 for example is the silicon layer.
Then, please refer to Fig. 2 and Fig. 8, this device 200 includes a hydrofluoric acid vapor etching chamber 230, be adjacent to this first high density plasma enhanced chemical vapor deposition chamber 220, formation remains in remaining this first insulating barrier 710 ' of this channel bottom in order to this wafer 201 is implemented removal this first insulating barrier 710 of part, and exposes these groove 610 sidewalls that are positioned at remaining this first insulating barrier, 710 ' top.
Then, please refer to Fig. 2 and Fig. 9, this device 200 includes one second high density plasma enhanced chemical vapor deposition chamber 240, is adjacent to this hydrofluoric acid vapor etching chamber 230, in order to this wafer 201 is implemented deposition one second insulating barrier 910 and filled up this groove 610.Because aforesaid remaining this first insulating barrier 710 ' that remains in these groove 610 bottoms, and reduce the original depth-to-width ratio of this groove 610, thereby reach imperforate groove deposition manufacture process easily.Wherein this second insulating barrier 910 for example is the silicon layer.
Afterwards, please refer to Fig. 2, this wafer 201 (as shown in Figure 9) that will finish the groove deposition manufacture process more is sent to a wafer that is adjacent to this second high density plasma enhanced chemical vapor deposition chamber 240, and to carry out chamber (unload) 250 temporary.Be noted that in addition and in Fig. 2, omit the conveyer that diagram transmits this wafer 201.
Then, please refer to Fig. 3, the device 200 of this depositing insulating layer in groove can more comprise: one first silicon alkane gas (SiH
4) source of supply device 310, connect this first high density plasma enhanced chemical vapor deposition chamber 220 by feed tube 390; One for example is the first blunt gas source of supply device 320 of helium (He) or argon gas (Ar), and nationality connects this first high density plasma enhanced chemical vapor deposition chamber 220 by feed tube 390; One first oxygen (O
2) source of supply device 330, connect this first high density plasma enhanced chemical vapor deposition chamber 220 by feed tube 390; And one first gas control system 340, between these first gas supply source devices 310,320,330 and this first high density plasma enhanced chemical vapor deposition chamber 220, enter flow and time in this first high density plasma enhanced chemical vapor deposition chamber 220 in order to control these first gases (silicon alkane gas, blunt gas, oxygen).
Then, please refer to Fig. 4, the device 200 of this depositing insulating layer in groove can more comprise again: a hydrofluoric acid vapor source of supply device 410, and nationality connects this hydrofluoric acid vapor etching chamber 230 by feed tube 490; And a hydrofluoric acid vapor control system 420, between this hydrofluoric acid vapor source of supply device 410 and this hydrofluoric acid vapor etching chamber 230, enter flow and time in this hydrofluoric acid vapor etching chamber 230 in order to control this hydrofluoric acid vapor.
Then, please refer to Fig. 5, the device 200 of this depositing insulating layer in groove can more comprise again again: one second silicon alkane gas source of supply device 510 connects this second high density plasma enhanced chemical vapor deposition chamber 240 by feed tube 590; One for example is the second blunt gas source of supply device 520 of helium or argon gas, connects this second high density plasma enhanced chemical vapor deposition chamber 240 by feed tube 590; One second oxygen supply source apparatus 530 connects this second high density plasma enhanced chemical vapor deposition chamber 240 by feed tube 590; And one second gas control system 540, between these second gas supply source devices 510,520,530 and this second high density plasma enhanced chemical vapor deposition chamber 240, enter flow and time in this second high density plasma enhanced chemical vapor deposition chamber 240 in order to control these second gases (silicon alkane gas, blunt gas, oxygen).
The device 200 of depositing insulating layer in groove according to the invention described above, owing to form remaining this first insulating barrier 710 ' that remains in this channel bottom at this hydrofluoric acid vapor etching chamber 230, thereby reduced the original depth-to-width ratio of this groove 610, make the deposition manufacture process that can easily reach no hole (void-free) groove in this second high density plasma enhanced chemical vapor deposition chamber 240.Just in device 200 of the present invention, can deposit first insulating barrier 710, this first insulating barrier 710 of etching part continuously and deposit processing procedures such as second insulating barrier 910, and easily finish processing procedure, and can avoid institute's issuable particulate (particle) problem in the processing procedure effectively with high-aspect-ratio and imperforate trench dielectric layer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (9)
1. the device of a depositing insulating layer in groove is applicable to form fluted wafer in substrate, and the device of this depositing insulating layer in groove comprises at least:
One wafer is written into the chamber, in order to temporary this wafer;
One first high density plasma enhanced chemical vapor deposition chamber is adjacent to this wafer and is written into the chamber, in order to this wafer is implemented deposition one first insulating barrier in this groove, does not still fill up this groove;
One hydrofluoric acid vapor etching chamber, be adjacent to this first high density plasma enhanced chemical vapor deposition chamber, form remaining this first insulating barrier that remains in this channel bottom in order to this wafer is implemented removal this first insulating barrier of part, and expose this trenched side-wall that is positioned at remaining this first insulating barrier top;
One second high density plasma enhanced chemical vapor deposition chamber is adjacent to this hydrofluoric acid vapor etching chamber, in order to this wafer is implemented deposition one second insulating barrier and filled up this groove; And
One wafer carries out the chamber, is adjacent to this second high density plasma enhanced chemical vapor deposition chamber.
2. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: more comprise:
One first silicon alkane gas source of supply device connects this first high density plasma enhanced chemical vapor deposition chamber;
One first blunt gas source of supply device connects this first high density plasma enhanced chemical vapor deposition chamber;
One first oxygen supply source apparatus connects this first high density plasma enhanced chemical vapor deposition chamber; And
One first gas control system between these first gas supply source devices and this first high density plasma enhanced chemical vapor deposition chamber, enters indoor flow of this first high density plasma enhanced chemical vapor deposition and time in order to control these first gases.
3. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: more comprise:
One hydrofluoric acid vapor source of supply device connects this hydrofluoric acid vapor etching chamber; And
One hydrofluoric acid vapor control system between this hydrofluoric acid vapor source of supply device and this hydrofluoric acid vapor etching chamber, enters flow and time in this hydrofluoric acid vapor etching chamber in order to control this hydrofluoric acid vapor.
4. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: more comprise:
One second silicon alkane gas source of supply device connects this second high density plasma enhanced chemical vapor deposition chamber;
One second blunt gas source of supply device connects this second high density plasma enhanced chemical vapor deposition chamber;
One second oxygen supply source apparatus connects this second high density plasma enhanced chemical vapor deposition chamber; And
One second gas control system between these second gas supply source devices and this second high density plasma enhanced chemical vapor deposition chamber, enters indoor flow of this second high density plasma enhanced chemical vapor deposition and time in order to control these second gases.
5. the device of depositing insulating layer as claimed in claim 2 in groove is characterized in that: the described first blunt gas is argon gas or helium.
6. the device of depositing insulating layer as claimed in claim 4 in groove is characterized in that: the described second blunt gas is argon gas or helium.
7. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: the described first insulation series of strata silicon layer.
8. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: the described second insulation series of strata silicon layer.
9. the device of depositing insulating layer as claimed in claim 1 in groove is characterized in that: more comprise a conveyer, in order to transmit this wafer between these chambers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02107115 CN1444265A (en) | 2002-03-08 | 2002-03-08 | Device for depositing insulating layer in grooved channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02107115 CN1444265A (en) | 2002-03-08 | 2002-03-08 | Device for depositing insulating layer in grooved channel |
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| Publication Number | Publication Date |
|---|---|
| CN1444265A true CN1444265A (en) | 2003-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02107115 Pending CN1444265A (en) | 2002-03-08 | 2002-03-08 | Device for depositing insulating layer in grooved channel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
-
2002
- 2002-03-08 CN CN 02107115 patent/CN1444265A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
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