CN1444217A - Dielectric recording medium and its mfg. method and device - Google Patents
Dielectric recording medium and its mfg. method and device Download PDFInfo
- Publication number
- CN1444217A CN1444217A CN03120558A CN03120558A CN1444217A CN 1444217 A CN1444217 A CN 1444217A CN 03120558 A CN03120558 A CN 03120558A CN 03120558 A CN03120558 A CN 03120558A CN 1444217 A CN1444217 A CN 1444217A
- Authority
- CN
- China
- Prior art keywords
- medium
- probe
- recording medium
- voltage
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
Abstract
A dielectric recording medium is provided with three layers of: a dielectric material, an electric conductor, and a substrate, and has a groove on the recording surface of the dielectric material. The groove is provided with one or a plurality of grooves. When a voltage is applied to a probe, the dielectric material just under the probe is polarized depending on an electric field generated between the electric conductor and the probe, which allows recording. Moreover, the groove facilitates the probe tracking since the probe scans along this groove.
Description
Technical field
The present invention relates to be used for recording the information in the medium recording medium of dielectric material or information reproduction, also relate to the method and apparatus that is used to make this medium recording medium.
Background technology
Developed multiple dielectric material and piezoelectric in recent years, wherein great majority are used for ultrasonic element, optical element, storer etc.According to this situation, the spontaneous polarization strength of having developed the measuring media material distributes and the method for the local anisotropy of piezoelectric.And, by using this technology, developed in dielectric material the technology of record and information reproduction.
Usefulness is noted down and the method for the dielectric film of the medium of information reproduction as making, known following method: adopt the method for vacuum coating apparatus, such as MOCVD (metal organic-matter chemical vapour deposition) method, sputtering method and laser ablation method; And the method for coating and sintering MO (metallorganics) material etc., such as molten iron electric crystal growth method, as liquid phase epitaxial method, sol-gal process and infusion process.Dielectric film by these method preparations can be used as the little electric capacity of medium or the non-volatile storage medium of ferroelectric memory.
On the other hand, the present inventor has proposed super high-density recording and/or the playback system of a kind of employing medium (ferroelectric) film as recording medium.This device is added to voltage on the probe with pellet shapes tip forming the polairzed area, thus recorded information.For information regeneration, adopt the function of scan non-linearity medium microscope (SNDM) to be implemented in record and therefrom reproduction in the nanoscale zone.Ferroelectric as the recording medium that is used for this system need have suitable specific inductive capacity and suitable coercive electric field.And the polarised direction of ferroelectric needs without exception perpendicular to the recording surface in nanoscale zone, also need extremely thin, such as 1000 dusts or littler.
Yet the classic method of making dielectric film is having difficulties aspect the dielectric film of the used condition of the recording medium that preparation is satisfied and above-mentioned SNDM method is used.
For example, apply and fire or the sol-gal process of sintering MO material in because need not vacuum plant etc., therefore can obtain dielectric film by lower cost.But, be difficult to the polarised direction that control requires as the recording medium essential condition of high record density, also be difficult to be formed uniformly 1000 dusts or thinner film.Because even film just has been uniformly after spin coating, film also easily during follow-up ablating work procedure because the decomposition of organic principle and removal become porous, therefore, can't control the generation of the growth nucleus of ferroelectric crystal with nano level uniform-dimension.And the growth of the crystal film in traditional sol-gal process is normally to the substrate crystal epitaxial growth, do not carry out the ferroelectric crystal orientation control, be the control of polarised direction.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of medium recording medium that constitute and be convenient to probe tracking by the dielectric material that is suitable for high density recording, extremely thin and its polarised direction of this dielectric material also provides a kind of method and apparatus that is used to make this medium recording medium without exception perpendicular to recording surface.
Above-mentioned purpose of the present invention can be used to adopt probe to write down and/or the medium recording medium of information reproduction are realized by a kind of.This medium recording medium are provided with: substrate; Be arranged on the electric conductor on the substrate; Be arranged on the dielectric material that is used on the electric conductor by probe records information; And the groove on the recording surface of dielectric material.
According to medium recording medium of the present invention, be provided with three layers: substrate; Electric conductor; And the dielectric material that is used as recording layer.On the recording layer of dielectric material, be provided with the groove that probe is followed the tracks of thereon.The setting of this groove can be convenient to follow the tracks of and describe at the recording layer middle probe when record or reproduction.
In aspect of medium recording medium of the present invention, the dielectric material in beneath trenches is a ferroelectric at least just.
According to this aspect, the dielectric material that at least a portion is positioned under the groove of probe tracking has ferroelectric properties.According to this on the one hand, polairzed area (record or no record are arranged) becomes clear.Therefore, can and can under good situations, write down and/or reproduce so that probe is followed the tracks of in recording areas.And not only groove but also whole surface all can be formed by ferroelectric material.About ferroelectric material, preferably adopt for example PZT and LiTaO
3
Medium recording medium of the present invention on the other hand in, just in time in the spontaneous polarization direction of the ferroelectric of beneath trenches in the direction vertical with recording surface.
According to this aspect, because the crystal orientation of ferroelectric is consistent with direction perpendicular to recording surface, so also just be provided with direction with the corresponding polairzed area of recorded information, this just allows to carry out high quality record.
Medium recording medium of the present invention on the other hand in, be provided with a plurality of grooves.
According to this aspect,, can also write down at a plurality of grooves simultaneously and/or reproduce owing to, therefore can write down very a large amount of information for the recording surface of recording medium is provided with a plurality of grooves.
Medium recording medium of the present invention on the other hand in, groove is arranged to concentric.
According to this aspect, because a plurality of record tracks with one heart and have an independent existence, therefore can write down and reproduce a plurality of data simultaneously, the speed that this has just improved record and has reproduced, and be convenient to the management of data.Even there is defective track, also can adopts another track to replace this track, and can use whole medium recording medium and do not abandon it.And because record and reproduction can be undertaken by rotation recording medium, therefore structure writes down and transcriber easily.
Medium recording medium of the present invention on the other hand in, groove is arranged to spiral.
According to this aspect,, be preferably therefore for long recording of information with continuous because record track spirality ground is provided with.This structure that also can adopt a plurality of spirality tracks independently to be provided with.And because record and reproduction can be undertaken by rotation recording medium, therefore structure writes down and transcriber easily.
Medium recording medium of the present invention on the other hand in, substrate is a silicon substrate.
According to this aspect, use chemically stable and silicon substrate that hardly can thermal deformation as substrate for the planarity on the surface of holding the record with prevent that physical damage is very useful.
Above-mentioned purpose of the present invention can realize by a kind of method of making the medium recording medium that adopt probe records or information reproduction, the method comprises: apply operation, the fluent material that will contain the medium parent that dissolves in solvent and the solvent is coated to substrate and is provided with on the one side of electric conductor; The solvent evaporation operation makes solvent evaporation after applying operation; Forming process, the tip portion with probe after the solvent evaporation operation is put in the medium parent that is layered on the substrate; Voltage applies operation, voltage is applied between the probe and electric conductor that accompanies the medium parent therebetween; And mobile process, apply operation and apply under the voltage condition probe is moved being similar to voltage.
Method according to manufacturing medium recording medium of the present invention, can have substrate, form groove on the dielectric material surface of the recording surface of electric conductor and this recording medium of three layers of dielectric material becoming, the dielectric material in beneath trenches just in time can be become ferroelectric crystal.By probe is moved along this groove, can easily be used to write down tracking with information reproduction.And, since the part of beneath trenches be the polaxis direction with perpendicular to the consistent ferroelectric crystal of the direction of recording surface, so with information to write down the polarised direction of corresponding polairzed area also identical, this just allows to carry out high quality record and reproduction.
Apply operation and be the fluent material that to contain the medium parent that dissolves in solvent and the solvent and be coated to operation on the substrate that is provided with electric conductor.The medium parent is a collosol state.Ethanol, ester etc. can be used as solvent.Specifically, MO (metallorganics) material can be used as described fluent material.Preferably, the MO material as fluent material can be the sol-gel parent of kind of liquid.For example, " the PZT spin coating liquid " of " KOJUNDO CHEMICAL LAB, CO., LTD " manufacturing can be used for making pzt thin film.Can adopt spin coating method etc.The solvent evaporation operation is evaporated solvent and is made its curing by gel from the medium parent of coated collosol state.The degree of solidifying can be such, makes the part of putting into probe by exerting pressure become etat lacunaire.That is, the organic principle of MO material does not decompose in this operation as yet fully.In forming process, the tip portion of probe is put in the medium parent of solid state, and on the surface of medium parent, forms etat lacunaire.Incidentally, the etat lacunaire in the forming process forms also can apply in the operation at voltage subsequently and carries out.Apply in the operation at voltage, under the situation that forms etat lacunaire on the medium parent surface, voltage is applied between the probe and electric conductor that accompanies the medium parent therebetween.Under because of the effect that applies the weak current that voltage forms, just in time in the medium parent fraction below probe, from the nucleus of probe side growth ferroelectric.Incidentally, even omission as the forming process of finishing operation, makes above-mentioned medium parent fraction ground pyrolysis by surface and employing weak current with probe contact medium parent, also can when applying, voltage form etat lacunaire.In the mobile process, make probe move and form subsequently ferroelectric crystal applying under the condition of voltage, and form groove and make it stable.
In aspect of the method for manufacturing medium recording medium of the present invention, described method also is provided with electric field and applies operation, applies parallel electric field when firing the medium parent behind mobile process.
According to this aspect, by applying perpendicular parallel electric field in the recording material for medium that on fire, forms groove, can adopt the crystal that is formed under the groove to make the whole surface crystallization of medium, and can make crystal orientation aim at the direction vertical with recording surface as seed crystal.
The method of manufacturing medium recording medium of the present invention on the other hand in, apply operation and adopt spin-coating method.
According to this aspect, the medium parent of collosol state can be coated on the substrate with predetermined uniform thickness.Viscosity by control material, the rotational speed of spinner wait and control film thickness.
The method of manufacturing medium recording medium of the present invention on the other hand in, with regard to the medium parent is coated on the substrate, can adopt sol-gal process.
According to this aspect, in applying operation, the fluent material of collosol state, instant colloidal liquid material are as described fluent material.Described colloidal sol shape fluent material contains solvent and colloidal sol shape medium parent.In applying operation, according to sol-gel process, colloidal sol shape fluent material is coated on the substrate, and solvent is partly evaporated to form gel.According to this on the one hand, for example can forming with comparalive ease, thickness is the medium recording film of 1000 dusts.
Above-mentioned purpose of the present invention can adopt probe to write down or the device of the medium recording medium of information reproduction is realized by a kind of the manufacturing.This device is equipped with: coating unit, and the fluent material that is used for comprising the medium parent that solvent and solvent dissolve is coated to the surface that substrate is provided with electric conductor; Be used to make the solvent evaporation device of solvent evaporation; Building mortion is used for the tip portion of probe is put into the medium parent that is layered on the substrate; Voltage bringing device is used for voltage is applied between the probe and electric conductor that accompanies the medium parent therebetween; And mobile device, move under the condition that is used to make probe apply voltage at voltage bringing device.
According to the device of manufacturing medium recording medium of the present invention, can produce and have these medium recording medium of three layers of substrate, electric conductor and dielectric material, it has: at the lip-deep groove of the dielectric material that becomes recording surface; And just in time below probe and its polaxis direction be arranged on ferroelectric crystal perpendicular to the direction of recording medium.
In aspect of the device of manufacturing medium recording medium of the present invention, described device also has been equipped with the electric field bringing device, applies parallel electric field when being used for firing the medium parent behind the mobile device traveling probe.
According to this aspect, by in the recording material for medium that on fire, forms groove it being applied parallel electric field, can produce a kind of like this medium recording medium, its whole surface utilizes the crystal that is formed at beneath trenches as seed crystal and crystallization, and has the crystal that the polaxis orientation is arranged on the direction vertical with recording surface.
When reading in conjunction with the accompanying drawing of following Short Description, can be from below with reference to more being expressly understood essence of the present invention, effectiveness and other feature the detailed description of the preferred embodiments of the present invention.
Description of drawings
Figure 1A is the planimetric map of the structure of expression medium recording medium of the present invention;
Figure 1B is the cut-open view of the A-A along the line of Figure 1A;
Fig. 2 A is the synoptic diagram of the form of expression medium recording medium of the present invention to Fig. 2 C, Fig. 2 A represents to have the band shape or the card shape medium of a plurality of linear channel, Fig. 2 B represents to have the dish type medium of a plurality of concentric grooves, and Fig. 2 C represents to have the dish type medium of spiral groove;
Fig. 3 is the process flow diagram of manufacturing process of the method for expression manufacturing medium recording medium of the present invention;
Fig. 4 A and Fig. 4 B are the synoptic diagram of the operation of expression manufacturing medium recording medium of the present invention, Fig. 4 A represents the operation of MO coated materials on substrate, the MO material is the colloidal sol that adopts solvent, and Fig. 4 B represents to make solvent to be evaporated from coated MO material and pass through the operation that gel solidifies;
Fig. 5 C is the synoptic diagram of following Fig. 4 B to Fig. 5 F, the operation of representing manufacturing medium recording medium of the present invention, Fig. 5 C is illustrated in the operation that forms groove and ferroelectric crystal in the MO material of solid state, Fig. 5 D is illustrated in the medium recording medium that form in the operation shown in Fig. 5 C, Fig. 5 E is illustrated in when firing the medium recording medium that form in the operation shown in Fig. 5 C it is applied the operation of parallel electric field, and Fig. 5 F is illustrated in the medium recording medium that form in the operation shown in Fig. 5 E;
Fig. 6 is the block diagram of the structure of the expression device that is used to make the medium recording medium of the present invention;
Fig. 7 is the synoptic diagram of an example of the device of the expression groove that is used to form the medium recording medium;
Fig. 8 is expression dielectric thickness and the synoptic diagram that makes the relation between the oppositely required minimum voltage in polairzed area, wherein adopts the probe radius as a parameter;
Fig. 9 is the synoptic diagram of an example of the expression information recording/reproducer that adopts medium recording medium related to the present invention; And
Figure 10 is the synoptic diagram of an example of the expression information recording/reproducer that adopts the medium recording medium with a plurality of grooves related to the present invention.
Embodiment
(embodiment of medium recording medium)
The embodiment of medium recording medium of the present invention is described below with reference to Fig. 1 and Fig. 2.Figure 1A is the planimetric map of the structure of expression medium recording medium of the present invention.Figure 1B is the sectional view of the A-A along the line of Figure 1A.Fig. 2 A is the synoptic diagram of the form of expression medium recording medium of the present invention to Fig. 2 C, Fig. 2 A represents to have the band shape or the card shape medium of a plurality of linear channel, Fig. 2 B represents to have the dish type medium of a plurality of concentric grooves, and Fig. 2 C represents to have the dish type medium of spiral groove.
As shown in Figure 1, medium recording medium 1 are provided with dielectric material 11, electric conductor 12 and substrate 13 these three layers, and have the groove 15 on the recording surface of dielectric material 11.Groove 15 is one or more, as number in the figure 15a to shown in the 15c.The dielectric material 11 of groove 15 belows is a ferroelectric crystal 14.
With regard to dielectric material 11, it is contemplated that following material: LiTaO
3As PbTiO
3-PbZrO
3The PZT material of solid solution; By PbTiO
3The lead titanates of expression; By PbZrO
3The lead zirconates of expression; By BaTiO
3The barium titanate of expression; By LiNbO
3The lithium niobate of expression; PLZT material as the solid solution of plumbous (Pb), lanthanum (La), zirconium (Zr) and titanium (Ti); BNPB material as the solid solution of bismuth (Bi), sodium (Na), plumbous (Pb) and barium (Ba); And other material.
Groove 15 is used to make probe 26 along the scanning of this groove, and is convenient to probe 26 and follows the tracks of.Incidentally, the width of groove 15 equates with the tip diameter of nano level probe 26 basically.Therefore, can realize very highdensity record.
In addition, in order to guarantee to move the convenience and the intensity thereof of medium recording medium 1 with this structure, can be with the material such as plastics or pottery around these medium encapsulating, but record and/or reproduce except the surface.
Function as the medium recording medium 1 with said structure of recording medium is as described below.In the time of on the probe 26 on voltage being applied to the groove 15 that leans against dielectric material 11, produce electric field between probe 26 and electric conductor 12, that part of polarised direction that goes up ferroelectric crystal 14 that probe 26 is leaned on is alignd with the direction of an electric field that is applied.By making this polarization arrive the back side of dielectric material 11, can form stable polairzed area and recorded information therein.On the other hand, for reproducing, under probe 26 leans against situation on the groove 15, can scan groove 15, and carry out the detection that changes with the corresponding small capacitance of the orientation of spontaneous polarization by adopting by the SNDM method that the present inventor invented by probe 26.The information of reproducing recorded thus.When record and/or reproduction,, therefore can accurately and easily follow the tracks of because probe 26 moves along groove 15.
Then explanation is about some examples of the shape of medium recording medium.Fig. 2 A represents to have the band shape or the card shape medium recording medium 1 of a plurality of linear channel.It can be used for and traditional band shape or the identical application of card-shape recording medium, by adopting the groove 15 of predetermined quantity, can write down or reproduce bulk information simultaneously, has therefore improved record and/or reproduction speed.And, the independent convenient management of each groove 15 data management and processing.Here, groove 15 can be the aggregate of each particulate concave shape.
Fig. 2 B represents to have the disc shape media recording medium 2 of a plurality of concentric grooves 15.It can be used for the application identical with traditional disc recording medium, and by adopting the groove 15 of predetermined quantity, can write down or reproduce a large amount of information simultaneously.And the independent management of each groove 15 or tissue can be convenient to data management and processing.
Fig. 2 C represents to have the disc shape media recording medium 3 of spiral groove 15.It can be used for and the identical application such as (CD) of conventional small CD, and it also is applicable to the record and the reproduction of long and continuous information.
(with the relevant embodiment of method that makes the medium recording medium)
The method of manufacturing medium recording medium of the present invention is described to Fig. 5 F below with reference to Fig. 3.Incidentally, Fig. 3 is the process flow diagram of manufacturing process of the method for expression manufacturing medium recording medium of the present invention.Fig. 4 A is the synoptic diagram of the expression manufacturing process relevant with manufacture method of the present invention with Fig. 4 B.Fig. 5 C is the synoptic diagram that is illustrated in after Fig. 4 B of manufacturing process to Fig. 5 F.
At first, apply in the operation (step S101), coating material 16 is coated on the substrate 13 at dielectric material.On the substrate of making by silicon etc. 13, be provided with electric conductor 12 by said method or similar approach, and applied coating material 16 thereon.Coating material 16 is a colloidal sol, it be by as the MO material dissolves of dielectric material to solvent, as obtaining in the ethanol.Can adopt spinner to wait and apply, make it to have predetermined uniform thickness, for example be about 1000 dusts.
Secondly, in solvent evaporation operation (step S102), the employing annealing device waits the solvent evaporation that makes in the coating material 16 to solidify the MO material, begins to become gel from colloidal sol.Heat-treat condition is for example to handle 3 minutes at 150 ℃.The film of MO material is put to dry MO molecular film at this moment, does not have ferroelectric properties as yet.
Then, in forming process (step S103), the tip portion of the probe 26 of conduction is inserted in the film of MO material, up to the tip portion of the probe 26 predetermined degree of depth in the film of sinking.Probe 26 has diameter in nano level little hemispherical tip part, and it is inserted for example degree of depth as hemisphere portion is buried in the film.
Then, apply in the operation (step S104), between probe 26 and electric conductor 12, apply predetermined voltage, so that the film of MO material is applied electric field at voltage.For example, if the film thickness of MO material is about 1000 dusts, the voltage that is applied is about 10V so, if the film thickness of MO material is about 500 dusts, the voltage that is applied preferably is about 5V so.Incidentally, the voltage that is applied can be DC voltage, also can be alternating voltage.
By applying voltage, in the film of MO material, there is faint electric current to flow, this has just produced heat.By this heat, crystallization has taken place from the just in time surface below probe 26 one side of film, thereby with the essentially identical nano level film micro area of the tip diameter of probe 26 in form ferroelectric crystal 14.Even this shows that faint electric current also has because of the caused enough heat release energy of film impedance, makes MO material breakdown and crystallization in the film micro area.Incidentally, forming process (step S103) can be omitted and carry out when execution voltage applies operation (step S104).In this case, by contacting the surperficial of above-mentioned medium parent with probe and adopting this weak current to make above-mentioned medium parent fraction ground pyrolysis, can during applying voltage, form etat lacunaire.
And in this operation, electric field vertically is added on the electric conductor 12 from probe 26, and the polarization orientation of crystal can align with the direction perpendicular to film surface, therefore can carry out polarity correction simultaneously with crystal growth and handle, and this is favourable.
Then, in probe mobile process (step S105), probe 26 applies at voltage and moves under the condition of operation to form groove 15.Form groove 15 by this operation, simultaneously, form ferroelectric crystal 14 for 15 times and make groove 15 stable at groove.Ferroelectric crystal 14 is to wherein record and the therefrom part of information reproduction.Moving of probe 26 can be not only carried out by traveling probe 26 itself but also by mobile media.When forming a plurality of groove 15, can use a plurality of probes 26 simultaneously.And, if in the dish type medium, form spiral groove 15, can be by the tip portion of probe 26 being put into rotating dish type medium, simultaneously probe 26 radially being moved to form groove.
As mentioned above, can have groove 15 and the medium recording medium that are positioned at the ferroelectric crystal 14 of groove 15 belows by above-mentioned operation preparation.In addition, by fire/parallel electric field applies operation (step S106) can make the ferroelectric crystal 14 of groove 15 belows become better, it can also make the whole thin film crystallization of MO material.
Firing/parallel electric field applies in the operation (step S106), and it is to carry out in the temperature of the decomposition temperature that is higher than the MO material in baking apparatus that the firing of the medium recording medium that obtained by probe mobile process (step S105) handled.Baking apparatus has the parallel pole that is arranged at intervals at wherein, and its size is enough to cover whole medium recording medium, and fires processing when applying parallel electric field.Like this, the ferroelectric crystal 14 that can adopt the operation by probe mobile process and front to obtain makes whole thin film crystallization as seed crystal, and the voltage that can pass through to be applied obtains crystal orientation at the ferroelectric crystal 14 perpendicular to the direction of film surface.
The ad hoc structure of aforesaid each operation then is described.Fig. 4 A is illustrated in the operation that applies the MO material on the substrate 13, and the MO material is the colloidal sol that adopts such as the solvent of ethanol; That is, coating material 16 comprises dielectric material.This operation applies operation corresponding to the dielectric material among Fig. 3.The substrate 13 that is provided with coating material 16 above is placed in the spin coating 21 of spinner 20.The nozzle 22 of coating material 16 on the center that is arranged in spin coating 21 oozes, and since the rotation of spinner 20 coating material 16 is coated on the whole surface of substrate 13 with thin and homogeneous thickness.Can control the rotational speed of the viscosity of coating material 16, the amount of dripping, spinner 20 etc., so that obtain for example film thickness of 1000 dusts.In dielectric material applies operation, by with dry inert gas, fill the inside of the spinner 20 that is placed with substrate 13 as nitrogen, any change can not take place or change coating material.
Fig. 4 B represents from coating material 16 evaporating solvent and makes it begin to change to the operation that gel ground solidifies from colloidal sol.This operation is corresponding to the solvent evaporation operation among Fig. 3.The substrate 13 that is coated with coating material 16 is placed on the heating arrangement 24, solvent is evaporated from coating material 16 and makes its curing.Can control solid state by waiting heating-up temperature, heat time heating time.Incidentally, coating material 16 is called as dielectric material 11 after curing.
Then, Fig. 5 C represents to form the operation of groove 15.By pressure the tip portion of probe 26 is placed in the dielectric material 11 on the substrate 13, makes its tip portion be absorbed in the degree of depth predetermined in the film.Probe 26 along moving perpendicular to the direction of figure paper plane, applies voltage simultaneously with this understanding between probe 26 and electric conductor 12.This operation applies the combination of operation and probe mobile process corresponding to the forming process among Fig. 3, voltage.Part at the tip portion of putting into probe 26 forms groove 15, and the voltage that passes through to be applied forms ferroelectric crystal 14 15 times at groove.Fig. 5 D is the cut-open view of edge perpendicular to the direction of groove 15, and expression forms the dielectric material 11 of groove 15 and crystal 14.By these operations, can form medium recording medium 1 related to the present invention.
Fig. 5 E represents the medium recording medium 1 that form are further fired and applied the operation of parallel electric field in the operation of Fig. 5 C.Medium recording medium 1 are placed between the electrode 29a and 29b of baking apparatus 25, and wherein ablating work procedure carries out in the temperature of the decomposition temperature that is higher than the MO material, simultaneously it is applied parallel electric field.This operation applies operation corresponding to firing among Fig. 3/parallel electric field.Like this, can adopt formed ferroelectric crystal 14 to make whole thin film crystallization as seed crystal, the voltage that can pass through to be applied obtains crystal orientation at the ferroelectric crystal 14 perpendicular to the direction of film surface.Fig. 5 F is the cut-open view of the medium recording medium of the final form that forms in these operations.
(being used to make the embodiment of the device of medium recording medium)
Below with reference to Fig. 6 and Fig. 7 the embodiment that is used to make the device of medium recording medium of the present invention is described.
As shown in Figure 6, the device 4 that is used to make the medium recording medium is provided with: dielectric material coating unit 32; Solvent evaporation device 33; Building mortion 34; Voltage bringing device 35; Probe moving device 36; Fire/parallel electric field bringing device 37; And the controller 31 that is used to control these devices.
The device that dielectric material coating unit 32 is MO coated materials of being used for being dissolved in solvent to the top substrate 13 that is formed with electric conductor 12 for example uses spinner.The MO material is coated on the substrate with predetermined thickness.Viscosity by control MO material, the rotational speed of spinner wait and control coating thickness.
Solvent evaporation device 33 is to be used for evaporating the device of solvent from being coated in dielectric material 11 on the substrate 11, can use heating arrangement 24, as heating plate.By waiting control heating-up temperature, heat time heating time control of carrying out evaporating solvent and curing medium material 11.
Building mortion 34 is to be used for the tip portion of probe 26 is put into dielectric material 11 that is coated on the substrate 13 and the device that forms groove 15.Control the degree of depth of formed groove 15 by be added to elastic force on the probe 26 with controls such as springs.Perhaps, also can control perpendicular to the position on the direction of recording surface by mechanically setting probe 26.
Voltage bringing device 35 is the devices that are used for applying voltage between probe 26 and electric conductor 12.It is transformed into ferroelectric crystal 14 by applying voltage with the dielectric material 11 that is in probe 26 belows.The voltage that is applied can be DC voltage or alternating voltage.Institute's making alive is controlled in the fixed predetermined value with the film thickness of dielectric material 11.
Probe moving device 36 is to be used for putting into dielectric material 11 and voltage puts on the device that under the condition of probe probe 26 is moved at the tip portion of probe 26.It forms groove 15 on the surface of dielectric material 11.The may command translational speed makes under this speed, just in time forms the crystal 14 of good condition below probe 26.
Fire/parallel electric field bringing device 37 is the devices that are used for firing in parallel electric field the medium recording medium that prepared by said apparatus.The ferroelectric crystal 14 that its employing is formed under the probe 26 makes whole film become the crystal that is oriented in perpendicular on the direction of recording surface as seed crystal.It forms the medium recording medium with ferroelectric crystal in high quality.
Fig. 7 is the synoptic diagram of an example that expression is used to form the device 5 of groove, and this device forms groove 15 and crystal 14, and is used to prepare disc shape media recording medium 2 or 3.By the tip portion of probe 26 being put into dielectric material 11, it being applied voltage, rotating media recording medium and traveling probe 26, form groove 15 and crystal 14.One end of the swing arm 43 on probe 26 and the support column 42 that is arranged on pedestal 40 links to each other, and the other end of probe 26 is placed in the dielectric material 11.Support column 42 is provided with rack and rinion adjustment 44 and micromatic setting 45, the pressure of 26 pairs of dielectric materials 11 of scalable probe.Rack and rinion adjustment 44 for example is made of accurate screw rod.On the other hand, micromatic setting 45 for example is made of piezoelectric element, and the voltage that imposes on piezoelectric element by control is accurately regulated the position of swing arm 43.Medium recording medium 2 are placed on the platform 48 of motor 47 and rotation.Probe 26 by unshowned feed mechanism along the dish move radially, thereby form concentric or spiral groove 15.
As mentioned above, the device 5 that is used to form groove comprises building mortion shown in Figure 6 34, voltage bringing device 35 and probe moving device.Incidentally, for the medium recording medium 1 of band shape or card-shape, a kind of structure that also can utilize medium recording medium 1 to be arranged in the linear feeding mechanism forms groove 15 and ferroelectric crystal 14.Be not limited to above-mentioned explanation, can adopt any mechanism and device to form medium recording medium 1,2 and 3 with identity function.
Dielectric thickness is described and makes relation between the oppositely required minimum voltage in polairzed area below with reference to Fig. 8.Though Fig. 8 has represented that the diameter of tip portion of the thickness of medium recording medium and probe is in micron-sized relation, but can determine, if the diameter of the thickness of medium recording medium and the tip portion of probe is reduced to nanoscale, can obtain being similar to relation shown in Figure 8.Because the polairzed area corresponding to record has the size substantially the same with probe diameter, therefore preferably make diameter less so that carry out highdensity record.On the other hand, Fig. 8 has told about along with the dielectric thickening, forms the required voltage in polairzed area and also becomes higher.Particularly when probe diameter hour, along with the increase of dielectric thickness, required voltage increases sooner.Therefore, in order to be applicable to low voltage operating, dielectric should be thinner.Medium recording medium of the present invention form like this, make the THICKNESS CONTROL of its dielectric material 11 get evenly and thinner, for example are about 1000 dusts, thereby satisfy this demand.
(adopting the information recording/reproducer of medium recording medium of the present invention)
Then introduce the information recording/reproducer that has adopted medium recording medium of the present invention with reference to figure 9 and Figure 10.Fig. 9 is the synoptic diagram of structure of block diagram that the information recording/reproducer 6 of the medium recording medium with a groove 15 has been adopted in expression.Figure 10 is the synoptic diagram of pith that the information recording/reproducer 7 of the medium recording medium with a plurality of grooves 15 has been adopted in expression.
As shown in Figure 9, information recording/reproducer 6 is provided with: card-shape medium recording medium 1; Probe 26; Electrode 51; Exchange (AC) signal generator 52; Tracer signal generator 53; Totalizer 54; Oscillator 55; Frequency modulation (FM) detuner 56; Signal detector 57; Inductance L; Inductance L a; Capacitor C a; And switch SW 1.In addition, the obvious various general utility functionss that also are provided with as information record carrier.
Electrode 51 is the refurn electrodes of high-frequency electric field that are used for producing and being added to by probe 26 at oscillator 55 film micro area of medium recording medium 1.
AC signal generator 52 is the devices that are used to produce the AC signal that imposes on probe 26.It imposes on dielectric film micro area with AC field, and modulates the signal that is read when reading information, so that the separation that signal is read in assurance.And AC signal generator 52 makes the tracer signal biasing from tracer signal generator 53, and the tracer signal of biasing is imposed on probe 26 to write down this information.Make that with the difference of capacitor C s under the corresponding probe 26 of polarized state the oscillation frequency of oscillator 55 is modulated.By it is carried out demodulation, can monitor and whether carry out recording operation accurately.When sense information, SW1 links to each other with terminal a one side.When writing information, SW1 links to each other with terminal b one side.
Tracer signal generator 53 will be recorded in the signal that information translation in the medium recording medium 1 becomes the form be suitable for writing down.Also can optimally set also output-voltage levels, pulse width etc.
Totalizer 54 will be from the signal that is used to write down of record signal generator 53 with from the AC signal plus of AC signal generator 52, so that it is modulated and be applied to probe 26.
Oscillator 55 produces by frequency modulation (PFM) and is used to read the signal of the information that is write down.The frequency of oscillator for example is set to about 1GHz.
Inductance L a and capacitor C a constitute low (LC) wave filter that ends, and it is installed is the AC signal interference oscillatory device 55 that is used to prevent AC signal generator 52.The oscillation frequency of oscillator 55 is about 1GHz, even therefore the AC signal of AC signal generator 52 is the MHz level, also can adopt simple LC wave filter that they are separated basically.And the frequency representation that increases the AC signal improves data transfer rate, in this case, can select to be applicable to the filter constants of this situation.
Inductance L with constitute resonant circuit corresponding to the capacitor C s of the polairzed area under the probe 26.The variation of capacitor C s can cause change of resonance frequency, causes the frequency modulation (PFM) of the oscillator signal of oscillator 55.By this frequency modulation (PFM) of demodulation, just can read this recorded information.Here, though there is capacitor C a in resonant circuit, because to compare capacitor C s very little with capacitor C a, therefore capacitor C s is a leading factor concerning resonance frequency.
The oscillator signal of FM demodulator 56 demodulated oscillators 55, this signal are to come frequency modulation by the resonant circuit that inductance L and capacitor C s constitute.Use typical FM pick-up unit for this reason.
The AC signal that signal detector 57 adopts AC signal generators 52 carries out Coherent Detection as synchronizing signal to the signal of demodulation in FM demodulator 56, and the information of reproducing recorded.
Follow the recording operation of descriptive information data recording/reproducing device 6.SW1 links to each other with terminal b.At first, information to be recorded is input in the tracer signal generator 53.In tracer signal generator 53, the predetermined format that information translation to be recorded is become to be suitable for writing down, and as having the setting voltage level and setting the digital recording signal of pulsewidth and export.
Tracer signal from tracer signal generator 53 adds to probe 26 through inductance L a.Then,, in the ferroelectric crystal 14 of the groove 15 of medium recording medium 1, form the polairzed area by the electric field that between the electric conductor 12 of probe 26 and medium recording medium 1, produces, thus recorded information.
Monitoring record information is performed such: adopt by inductance L and be positioned at the resonant circuit that the capacitor C s corresponding to formed polairzed area under the probe 26 constitutes to come the oscillation frequency of oscillator 55 is carried out frequency modulation (PFM), carry out demodulation with 56 pairs of this FM signal of FM demodulator, and adopt the AC signal of AC signal generator 52 in signal detector 57, to carry out Coherent Detection as synchronizing signal.
The then reproduction of descriptive information data recording/reproducing device 6 operation.SW1 links to each other with terminal a.The AC signal adds to probe 26 from AC signal generator 52.This AC signal is the synchronizing signal in the Coherent Detection.When probe 26 is followed the tracks of groove 15, detect the capacitor C s corresponding, promptly corresponding capacitor C s with recorded information with the polairzed area.The resonance frequency of the resonant circuit that constitutes by capacitor C s and the inductance L oscillation frequency of coming modulating oscillator 55 then.This FM signal by demodulation, and adopts the AC signal of AC signal generator 52 to carry out Coherent Detection as synchronizing signal in signal detector 57 in FM demodulator 56, thereby reproduces the information of record.
The signal that picks up by this way reproduces as synchronizing signal by the AC signal that adopts AC signal generator 52, has therefore reproduced the information that is write down.Incidentally,, can adopt any device, as long as it is to be used for the circuit of the AC signal Synchronization of AC signal generator 52 ground reproducing signal, as lock-in amplifier for the device that is used for Coherent Detection.
Then the information recording/reproducer 7 that has adopted the medium recording medium that are provided with a plurality of grooves 15 is described with reference to Figure 10.Incidentally, transcriber 7 is with the difference of above-mentioned information recording/reproducer 6, this device have a plurality of groove 15a to 15c and corresponding with it a plurality of probe 26a to 26c.As for the structure total, with reference to the explanation of relative assembly 6 with information recording/reproducer 6.In addition, also be like this in the situation of device with more grooves 15.
When information recording/reproducer 7 carries out recording operation, adopt and the signal that is used to write down from the tracer signal generator is modulated, and offer probe 26a to 26c by inductance L a to Lc respectively from the different frequency of AC signal generator.By the voltage that provides to 26c for probe 26a, between the ferroelectric crystal 14 of the groove 15 of medium recording medium 1 and electric conductor 12, produce electric field, form the polairzed area according to these electric fields.Each probe 26a to 26c in along groove 15a to 15c corresponding one move recorded information sequentially.Probe 26a is to the mobile control that is very easy to tracking of 26c along each groove 15a to 15c.
Formed capacitor C sa to Csc at probe 26a under 26c, they are corresponding to the polairzed area and corresponding to recorded information.For record condition, by adopt by capacitor C sa to Csc, capacitor C a to Cc and the resonance frequency of the resonant circuit that constitutes of inductance L come the oscillation frequency of oscillator is modulated, with FM demodulator modulation signal is carried out demodulation, and make restituted signal with from the AC signal Synchronization of AC signal generator, the recording of information condition that provides to 26c for probe 26a can be provided.
Then, for the reproduction of information recording/reproducer 7 operation, offer probe 26a to 26c by inductance L a to Lc respectively from the signal with different frequency of AC signal generator.When probe 26a scans each groove 15a to 15c to 26c, detect be in probe 26a to the corresponding capacitor C sa in the polairzed area under the 26c to Csc, promptly with the corresponding capacitor C sa of recorded information to Csc.By adopt by these capacitor C sa to Csc, capacitor C a to Cc and the resonance frequency of the resonant circuit that constitutes of inductance L come the oscillation frequency of oscillator is modulated.Then, with FM demodulator modulation signal is carried out demodulation.By make restituted signal with from the AC signal Synchronization of AC signal generator.Like this, just can separate and reproduce by each probe 26a to information that 26c picked up.
Under the prerequisite that does not break away from spirit of the present invention or essential characteristic, the present invention can other particular form implement.Therefore, these embodiment all should be considered as illustrative and nonrestrictive in all respects, scope of invention should be indicated by claims rather than foregoing description, and all should be included in the present invention in the meaning and all changes in the scope of the equivalent of claim.
The Japan special permission communique No.2002-063053's that submitted on March 8th, 2002 is whole open, comprises that instructions, claims, accompanying drawing and summary are incorporated herein by all quoting.
Claims (13)
1. one kind is adopted probe to write down or the medium recording medium of information reproduction, and it comprises:
Substrate;
Be arranged on the electric conductor on the described substrate;
Be arranged on the dielectric material that is used for coming recorded information on the described electric conductor by probe; And
Groove on the recording surface of described dielectric material.
2. medium recording medium as claimed in claim 1 is characterized in that, the described dielectric material that at least just in time is positioned at described beneath trenches is a ferroelectric.
3. medium recording medium as claimed in claim 2 is characterized in that, the spontaneous polarization direction that just in time is positioned at the ferroelectric of described beneath trenches is the direction perpendicular to described recording surface.
4. medium recording medium as claimed in claim 1 is characterized in that, are provided with a plurality of described grooves.
5. medium recording medium according to any one of claims 1 to 4 is characterized in that, described groove is arranged to concentric.
6. medium recording medium according to any one of claims 1 to 4 is characterized in that, described groove is arranged to spiral.
7. medium recording medium according to any one of claims 1 to 4 is characterized in that, described substrate is a silicon substrate.
8. a production is used to adopt probe to write down or the method for the medium recording medium of information reproduction, and it comprises:
Apply operation, the fluent material that will contain the medium parent that dissolves in solvent and the described solvent is coated to substrate and is provided with on the surface of electric conductor;
The solvent evaporation operation, after described coating operation with solvent evaporation;
Forming process, the tip portion with probe after described solvent evaporation operation is put in the medium parent that is laminated on the substrate;
Voltage applies operation, after described forming process voltage is applied between the probe and electric conductor that accompanies the medium parent therebetween; And
Mobile process makes described probe move applying under the voltage condition.
9. the method for production medium recording medium as claimed in claim 8 is characterized in that also comprising that electric field applies operation, applies parallel electric field when wherein firing described medium parent after described mobile process.
10. produce the method for medium recording medium as claimed in claim 8 or 9, it is characterized in that, described coating operation adopts spin-coating method.
11. the method for production medium recording medium as claimed in claim 8 is characterized in that, for described medium parent is coated on the described substrate, adopts sol-gel process.
12. a production is used to adopt probe to write down or the device of the medium recording medium of information reproduction, it comprises:
Coating unit, the fluent material that is used for comprising the medium parent that solvent and described solvent dissolve is coated to the surface that substrate is provided with electric conductor;
Be used to make the solvent evaporation device of solvent evaporation;
Building mortion is used for the tip portion of probe is put into the medium parent that is laminated on the substrate;
Voltage bringing device is used for voltage is applied between the probe and electric conductor that accompanies the medium parent therebetween; And
Mobile device is used for applying at described voltage bringing device and moves described probe under the condition of voltage.
13. the device that is used to produce the medium recording medium as claimed in claim 12 is characterized in that also comprising the electric field bringing device, is used for after described mobile device moves described probe applying when firing described medium parent parallel electric field.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053/2002 | 2002-03-08 | ||
| JP2002063053A JP2003263804A (en) | 2002-03-08 | 2002-03-08 | Dielectric recording medium, and method and apparatus for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1444217A true CN1444217A (en) | 2003-09-24 |
Family
ID=27784916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN03120558A Pending CN1444217A (en) | 2002-03-08 | 2003-03-10 | Dielectric recording medium and its mfg. method and device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7065033B2 (en) |
| JP (1) | JP2003263804A (en) |
| CN (1) | CN1444217A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114483A (en) * | 2006-07-25 | 2008-01-30 | 希捷科技有限公司 | Electric field assisted writing using a multiferroic recording media |
| CN101320577B (en) * | 2007-02-23 | 2012-07-04 | 三星电子株式会社 | Ferroelectric information storage medium and method of manufacturing the same |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60202850T2 (en) * | 2001-03-23 | 2006-02-09 | International Business Machines Corp. | DEVICE AND METHOD FOR SAVING AND READING HIGH DENSITY DATA |
| WO2003023423A2 (en) * | 2001-09-10 | 2003-03-20 | Pioneer Corporation | Dielectric constant measuring apparatus and dielectric constant measuring method |
| JP4771324B2 (en) * | 2001-09-10 | 2011-09-14 | パイオニア株式会社 | Dielectric information apparatus, tape-shaped medium recording / reproducing apparatus, and disk-shaped medium recording / reproducing apparatus |
| JP4141745B2 (en) * | 2002-06-06 | 2008-08-27 | 康雄 長 | Dielectric recording / reproducing head, dielectric recording medium unit, and dielectric recording / reproducing apparatus |
| JP3954457B2 (en) * | 2002-07-09 | 2007-08-08 | パイオニア株式会社 | Dielectric recording medium and dielectric recording / reproducing apparatus |
| JP3954456B2 (en) * | 2002-07-09 | 2007-08-08 | パイオニア株式会社 | Pickup device |
| JP4017104B2 (en) * | 2002-07-09 | 2007-12-05 | パイオニア株式会社 | Dielectric recording / reproducing head and tracking method |
| JP4082947B2 (en) * | 2002-07-09 | 2008-04-30 | パイオニア株式会社 | Recording / reproducing head and manufacturing method thereof |
| JP4098689B2 (en) | 2002-09-11 | 2008-06-11 | 康雄 長 | Dielectric reproducing apparatus, dielectric recording apparatus, and dielectric recording / reproducing apparatus |
| JP3701268B2 (en) * | 2002-09-11 | 2005-09-28 | 康雄 長 | Dielectric recording apparatus, dielectric reproducing apparatus, and dielectric recording / reproducing apparatus |
| WO2004041914A1 (en) * | 2002-11-05 | 2004-05-21 | Eamex Corporation | Conductive polymer composite structure |
| JP3958196B2 (en) * | 2002-11-28 | 2007-08-15 | 康雄 長 | Dielectric recording / reproducing head and dielectric recording / reproducing apparatus |
| US20070014047A1 (en) * | 2003-05-01 | 2007-01-18 | Yasuo Cho | Recording/reproduction head and recording/reproduction device |
| JP2005004890A (en) | 2003-06-12 | 2005-01-06 | Yasuo Cho | Data recording/reproducing device using needle-like member, and data recording/reproducing method |
| AU2003260523A1 (en) * | 2003-08-22 | 2005-03-10 | Fmc Foret, S.A. | Method, devices and reagents which are used for wastewater treatment |
| US7590040B2 (en) | 2003-08-25 | 2009-09-15 | Yasuo Cho | Signal detecting method and apparatus and information reproducing apparatus and method |
| US7754353B2 (en) * | 2003-10-31 | 2010-07-13 | Newns Dennis M | Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer |
| JP4145773B2 (en) * | 2003-11-06 | 2008-09-03 | パイオニア株式会社 | Information recording / reproducing apparatus and recording medium |
| JP4642073B2 (en) * | 2005-03-31 | 2011-03-02 | パイオニア株式会社 | Signal processing circuit and reproducing apparatus |
| KR100695111B1 (en) * | 2005-06-18 | 2007-03-14 | 삼성에스디아이 주식회사 | Ferroelectric cold cathode and ferroelectric field emission device comprising the same |
| US20080074792A1 (en) * | 2006-09-21 | 2008-03-27 | Nanochip, Inc. | Control scheme for a memory device |
| US20080232228A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Systems and methods of writing and reading a ferro-electric media with a probe tip |
| US7903533B2 (en) * | 2007-04-23 | 2011-03-08 | Seagate Technology Llc | Probe head with narrow read element |
| US20080318086A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Surface-treated ferroelectric media for use in systems for storing information |
| US20080316897A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Methods of treating a surface of a ferroelectric media |
| US7626846B2 (en) * | 2007-07-16 | 2009-12-01 | Nanochip, Inc. | Method and media for improving ferroelectric domain stability in an information storage device |
| US20090201015A1 (en) * | 2008-02-12 | 2009-08-13 | Nanochip, Inc. | Method and device for detecting ferroelectric polarization |
| US20090213492A1 (en) * | 2008-02-22 | 2009-08-27 | Nanochip, Inc. | Method of improving stability of domain polarization in ferroelectric thin films |
| US20100002563A1 (en) * | 2008-07-01 | 2010-01-07 | Nanochip, Inc. | Media with tetragonally-strained recording layer having improved surface roughness |
| US20100085863A1 (en) * | 2008-10-07 | 2010-04-08 | Nanochip, Inc. | Retuning of ferroelectric media built-in-bias |
| JP4903827B2 (en) * | 2009-03-18 | 2012-03-28 | 株式会社東芝 | Nonvolatile memory device |
| JP2011029271A (en) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | Thin-film characteristic measuring device and method, and thin-film processing device and method |
| CN103837807B (en) * | 2012-11-23 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | The method of measurement deep trench carriers concentration distribution |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA757388B (en) * | 1974-12-16 | 1977-07-27 | Photovoltaic Ceramic Corp | Ferroelectric ceramic devices |
| US4490945A (en) * | 1983-03-23 | 1985-01-01 | Rca Corporation | Stylus manufacturing apparatus and method |
| EP0560757B1 (en) * | 1989-06-23 | 1996-12-18 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for storing digital information in the form of stored charges |
| KR970017286A (en) * | 1995-09-06 | 1997-04-30 | 가나이 츠토무 | Tracking method and storage |
| US5985404A (en) * | 1996-08-28 | 1999-11-16 | Tdk Corporation | Recording medium, method of making, and information processing apparatus |
| JP4160135B2 (en) * | 1997-07-31 | 2008-10-01 | 三星電子株式会社 | Disk device using ferroelectric thin film |
| NO309500B1 (en) * | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelectric data processing apparatus, methods for its preparation and readout, and use thereof |
| US6515957B1 (en) * | 1999-10-06 | 2003-02-04 | International Business Machines Corporation | Ferroelectric drive for data storage |
| SG116437A1 (en) * | 2000-12-22 | 2005-11-28 | Fuji Photo Film Co Ltd | Information recording medium, information recording and reproducing method and manufacturing method of information recording medium. |
-
2002
- 2002-03-08 JP JP2002063053A patent/JP2003263804A/en active Pending
-
2003
- 2003-03-07 US US10/382,992 patent/US7065033B2/en not_active Expired - Fee Related
- 2003-03-10 CN CN03120558A patent/CN1444217A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114483A (en) * | 2006-07-25 | 2008-01-30 | 希捷科技有限公司 | Electric field assisted writing using a multiferroic recording media |
| CN101114483B (en) * | 2006-07-25 | 2013-05-15 | 希捷科技有限公司 | Electric field assisted writing using a multiferroic recording media |
| CN101320577B (en) * | 2007-02-23 | 2012-07-04 | 三星电子株式会社 | Ferroelectric information storage medium and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003263804A (en) | 2003-09-19 |
| US20030169672A1 (en) | 2003-09-11 |
| US7065033B2 (en) | 2006-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1444217A (en) | Dielectric recording medium and its mfg. method and device | |
| CN1784729A (en) | Recording/reproduction head and device | |
| JP4109475B2 (en) | Dielectric recording medium, method for manufacturing the same, and apparatus for manufacturing the same | |
| US5481527A (en) | Information processing apparatus with ferroelectric rewritable recording medium | |
| US7221639B2 (en) | Pickup device | |
| JP2004046934A (en) | Dielectric recording medium and dielectric recording and reproducing device | |
| US7283453B2 (en) | Recording/reproducing head | |
| US6942914B2 (en) | Dielectric recording medium, and method of and apparatus for producing the same | |
| JPH04212737A (en) | Device and method for detecting positional deviation | |
| JP4641943B2 (en) | Ferroelectric thin film manufacturing method, voltage application etching apparatus, ferroelectric crystal thin film substrate, and ferroelectric crystal wafer | |
| CN101320577B (en) | Ferroelectric information storage medium and method of manufacturing the same | |
| JPH08297871A (en) | High-density recording medium and large-capacity recorder | |
| JP2005158248A (en) | Information storage medium with electric charge and dipole coupled | |
| JP2022104596A (en) | Ferroelectric storage device, method for reading information in ferroelectric storage device, and method for writing and reading information in ferroelectric storage device | |
| CN101430900A (en) | Ferroelectric recording medium, method for manufacturing same and microdot recording system including it | |
| JP2981789B2 (en) | Recording medium and information processing device | |
| JPH06236585A (en) | Information recording and reproducing method | |
| JPH06111392A (en) | Information recording medium and information reproducing method | |
| JPH04341947A (en) | Production of substrate and production of recording medium | |
| JPS6158889B2 (en) | ||
| JPH0845123A (en) | Production of electrode substrate | |
| JPS61227242A (en) | Recording medium | |
| JPH06231496A (en) | Information reproducing device and information recording device | |
| JPH04114332A (en) | Recording medium and information processing method and information processing device using the medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |