CN1442891A - Soft type encapsulating structure and its making method - Google Patents
Soft type encapsulating structure and its making method Download PDFInfo
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- CN1442891A CN1442891A CN 02106484 CN02106484A CN1442891A CN 1442891 A CN1442891 A CN 1442891A CN 02106484 CN02106484 CN 02106484 CN 02106484 A CN02106484 A CN 02106484A CN 1442891 A CN1442891 A CN 1442891A
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- patterned circuit
- encapsulating structure
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- soft type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
A soft type packaging structure incldues providing a baseplate and forming a patternized circuit preset with inner pin, output pin, test circuit or test terminal by electroplating manner on the baseplate surface, then a covering protective film of polyimide or a protective soft welding proof paint on the upper side of the patternized circuit except the inner pin and continuously combining the inner pin of patternized circuit with the lug no IC crystal wafer having been finished with lugging operation by relative hot pressing, and at least, removing the base plate and covering the protective film of polyimide or the protective soft welding proof paint on the lower side of the patternized circuit except outer pin area.
Description
Technical field
Present invention is directed to a kind of soft type encapsulating structure and manufacture method, refer to especially a kind ofly can finish soft chip package base board simultaneously and make soft type encapsulating structure and the manufacture method that engages automatically with interior pin.
Background technology
Along with constantly progressing greatly of integrated circuit (IC) manufacturing technology, the memory span system under equal area increases with the geometric progression aspect, to make every effort to meet the design concept that product is light, thin, short, little, function is strong.Nowadays, 0.18 the semiconductor element of micron live width has entered the batch process stage, relatively, damage or influence the IC element of small fragility for preventing the external force environmental factor, various highdensity encapsulation (Packaging) structure also in response to and give birth to wafer size structure packing technique (Chip ScalePackage CSP) for example.And the IC element must be connected its existing design function of competence exertion with the circuit of assembling structure, and therefore in semiconductor package, the technology quality of its electric connection can directly have influence on IC circuit elements design quality.
And in various IC element electric connection technology, the automatic joining technique of soft winding (TapeAutomated Bonding; TAB) technology owing to possess has testing electrical property before joint that high line density (pin-pitch is trickle relatively), automation can be provided, the assembling, and the advantage of low manufacturing cost, therefore generally be used in ultra-large type integrated circuit, high-speed electronic component structure dress, boat too, medical science, and various consumption electronic products in.
The making flow process of the automatic joining technique of soft winding (TAB) mainly includes: (1) makes the soft winding of a pinization, at first lies in a Polyimide (polyimide; PI) form the copper film in the winding, and on the copper film, carry out process such as photoresistance and etching and on Polyimide, form driving hole (sprocket), component hole (devicehole), and metal pins pattern; (2) finish the metal coupling step (bumping process) of an IC element (wafer); (3) the pin winding that will finish individually and projection IC wafer connect, with pin engagement step (InnerLead Bonding in finishing; ILB); (4) carry out sealing, electrical characteristics test; (5) outer pin is carried on the element of institute's desire driving, to carry out outer pin engagement step (Outer Lead Bonding; OLB); And (6) carry out the integration testing work of element at last again.
And in above-mentioned making flow process, because but interior pin engagement step is concerning the IC wafer important key of operate as normal whether, and the spacing between pin is very fine, have suitable degree of difficulty in the making, therefore, how to improve in pin joining technique and structure also so become the important topic that TAB could be widely applied and produce in batches.
Consult Figure 1A and Figure 1B, be respectively one commonly use in the automatic joining technique of soft winding (TAB) in the generalized section of pin connection process; As shown in the figure, at first be that a soft winding (tapecarrier) 15 is provided, soft winding 15 mainly is the Polyimide winding layer 155 that includes a plurality of metal pins 153 (trace) and tool insulation effect, the part system of pin 153 is formed at the surface of winding layer 155 via etching technique, its another part then can be exposed to outside the winding layer 155.In addition; one IC wafer 11 is provided again; the upper surface of IC wafer 11 is equipped with a passive state protective layer (PassivationLayer) 115; and being provided with plurality of electrodes connection pad (die pad) 113 on IC wafer 11 upper surface top layers, each electrode connection pad 113 all keeps by the metal coupling (bump) 13 of a penetrable protective layer 115 electrically connecting with extraneous.
Afterwards, respectively each pin 153 is aimed at corresponding projection 13, utilize a joining tool (thermal head) 17 respectively to projection 13 and evenly heating and pressurization start of pin 153, cause each projection 13 to engage with corresponding pin 153, also therefore IC wafer 11 interior electrode connection pads 113 will electrically connect with pin 153 by projection 13, with the engagement step (ILB) of pin in finishing, shown in Figure 1B.
Only, in the above-mentioned interior pin processing procedure of commonly using TAB,, make pin 153 very easily be subjected to the influence of external force and twist, increase the aligning pressing degree of difficulty of pin 153 and corresponding projection 13 on foot because the width of each pin 153 is very trickle; In addition, the height of each projection 13 also or difference arranged needs the height of projection 13 is controlled in the minimum error, otherwise the engaging reliability and will reduce of pin 153 and projection 13, on the product product guarantor its certain trouble being arranged; Again, also must evenly heat accurately and stress on projection 13 and the pin 153, just can guarantee joint quality between the two; Again, projection 13 also is that influence engages whether respond well key factor with scolder cleannes on the pin 153.
At above-mentioned all shortcoming of commonly using pin processing procedure in the TAB, industry develops again and soft wafer module technology (chip on film; COF), the COF technology has than the feature that TAB technology is lighter, thinner, pin-pitch is trickleer, therefore receives much concern in the semiconductor packaging field in recent years.
Consult Fig. 2 A and Fig. 2 B, be respectively one commonly use in the soft wafer module technology (COF) in the generalized section of pin connection process; As shown in the figure, at first be that a soft substrate (film) 25 is provided, this soft substrate 25 mainly is to include a plurality of metal pins 253 and to have the winding 255 that insulation effect is made by the Polyimide material, and wherein bending pin 253 is to be attached on the lower surface of winding 255.In addition; one IC wafer 21 is provided again; the upper surface of IC wafer 21 is equipped with a passive state protective layer 215, and is provided with plurality of electrodes connection pad 213 on the upper surface top layer of IC wafer 21, and each electrode connection pad 213 all keeps by the metal coupling 23 of a penetrable protective layer 215 electrically connecting with extraneous.
Moreover, attach an anisotropy conducting film (Anti-isotropicConductive Film in the lower surface of metal pins 253; ACF) or anisotropic conductive (Anti-isotropic ConductivePaste; ACP) conductive layer 257, continue and respectively each pin 253 is aimed at corresponding projection 23 again, utilize a joining tool (thermal head) 27 respectively to projection 23 and evenly heating and pressurization start of pin 253, cause each projection 23 to engage with corresponding pin 253, also therefore the electrode connection pad 213 in the IC wafer 21 will be by projection 23 and conductive layer 257 and with pin 253 electric connections, with the engagement step (ILB) of pin in finishing, shown in Fig. 2 B.
Above-mentioned commonly using in soft wafer module (COF) processing procedure, the technology of most critical still is the joining technique of pin 253 and projection 23.Because the width of each pin 253 is very trickle, and the thickness of winding 255 is low more than the winding 155 of TAB technology, therefore pin 253 is subjected to the thermal stress influence and the situation of displacement is even more serious, causes each pin 253 more difficult with corresponding projection 23 aligning pressings; Again, the influencing factors such as scolder cleannes on the even pressurized, heated of the height of each projection 23, IC wafer 21 and projection 23, projection 23 and the pin 253 still exist as the TAB technology.Moreover the manufacturing cost of soft substrate 25 is also than soft winding 15 height, and product percent of pass is on the low side relatively, therefore in the COF technology also can't extensively and be applied to produce in batches now.
In addition, no matter be in the TAB technology in employed soft winding or the COF technology applied soft substrate to be all bent soft materials made, so in carrying out, need very high element alignment degree during the pin engaging process, degree of difficulty when relatively also it is made with regard to invisible increase and cost expenditure.
Summary of the invention
In view of this, the invention provides a kind of soft encapsulating structure that can significantly reduce manufacturing cost, simplification making flow process and raising product percent of pass and preparation method thereof.
A kind of soft type encapsulating structure, it mainly is to include: one includes the patterned circuit of interior pin at least; Surface in this patterned circuit is provided with a diaphragm; And be provided with an anti-welding protective paint in another surface portion zone of this patterned circuit.
A kind of manufacture method of soft type encapsulating structure, its key step system includes: a substrate is provided; Part upper surface in this substrate forms default patterned circuit; The one IC wafer of having finished projectionization is provided, and the projection of this IC wafer is aimed at patterned circuit corresponding with it, and cause projection to engage with corresponding patterned circuit; And remove this substrate, and form a diaphragm on a wherein surface of patterned circuit.
Above-mentioned manufacture method still can include the following step: form a conductive layer in the surface of patterned circuit, and electrically connect to cause projection and patterned circuit on the IC wafer by this conductive layer.Wherein these conduction series of strata are optional selects anisotropy conducting film (ACF), anisotropic conductive (ACP) and knockdown one of them is made.
A kind of manufacture method of soft type encapsulating structure, its key step system includes: a substrate is provided; Part upper surface in this substrate forms default patterned circuit; Formation one diaphragm is gone up on a wherein surface in patterned circuit; And remove this substrate, and on another surface portion zone of this patterned circuit, form an anti-welding protective paint.
The formation method system of described patterned circuit includes: form a photoresistance in the substrate other parts surface that is not defined as patterned circuit; Form at least one metal level with plating mode at upper surface of substrate, to become this patterned circuit; Wherein this patterned circuit system can include interior pin, pin shoulder, outer pin, passive device electrode connection pad, measurement circuit, calibrating terminal and knockdown one of them person thereof.Wherein this patterned circuit system can select by gold, nickel, copper, palladium, platinum, tungsten, nickel-Jin, palladium-nickel, titanium-palladium-Jin, titanium-platinum-Jin, chromium-nickel-Jin, titanium-tungsten-Jin and knockdown one of them made person thereof.
Wherein one of them made person of macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material, acryl resin and composite type thereof can select in this diaphragm system;
Above-mentioned manufacture method still can include the following step: a substrate is provided, and forms a temporary coating in the lower surface of this substrate; After patterned circuit forms, remove this temporary coating.
Wherein said substrate is to select copper, aluminium, iron, nickel, zinc, steel, stainless steel and knockdown one of them made person thereof.
This soft type encapsulating structure of the present invention and preparation method thereof can carry out the making and the interior pin connection process of soft substrate simultaneously, to simplify fabrication steps and to save cost of manufacture.And replace traditional etching mode pattern-making circuit to electroplate generation type, make ability so can significantly improve the fine circuit of soft chip package base board or soft winding, help the distribution density of soft wafer module technology COF or the automatic joining technique TAB of soft winding.Because pin all carries out under the higher substrate support of a hardness with automatic the joint with the making of soft chip package base board of IC wafer in it, pin and the location alignment ability of IC wafer when engaging in not only can effectively improving also can reduce the degree of difficulty on the connection process relatively and increase product percent of pass.And pin can engage by existing chip bonding technology board with the connection process of IC wafer in it, not only can improve product yield and product percent of pass, and can reduce cost of manufacture relatively.
Description of drawings
Figure 1A and Figure 1B: be respectively one commonly use in the automatic joining technique of soft winding (TAB) in the generalized section of pin connection process;
Fig. 2 A and Fig. 2 B: be respectively one commonly use in the soft wafer module technology (COF) in the generalized section of pin connection process;
Fig. 3 A to Fig. 3 E: be to be respectively the present invention can reach the substrate manufacture of soft type encapsulating structure and each step structure cut-away view of a preferred embodiment of interior pin connection process simultaneously;
Fig. 4: be another embodiment of the present invention structure cut-away view;
Fig. 5 A to Fig. 5 D: be that the present invention is making each step structure cut-away view of soft winding.
Embodiment
Seeing also Fig. 3 A to Fig. 3 E, is to be respectively the present invention can reach the substrate manufacture of soft type encapsulating structure and each step device cut-away view of a preferred embodiment of interior pin connection process simultaneously; As shown in the figure, key step of the present invention is to include:
At first, providing one can be by copper, aluminium, iron, nickel, zinc, steel, stainless steel or the made substrate 31 of above-mentioned material composition, part upper surface in substrate 31 can plan that according to design defining one includes interior pin, the pin shoulder, outer pin, passive device electrode connection pad, the patterned circuit position 333 of measurement circuit or calibrating terminal, the substrate 31 other parts surfaces that are not planned as patterned circuit position 333 then can select dry film or the made photoresistance 315 of liquid resistance material to be covered by one, and the lower surface formation one in substrate 31 can completely cut off the temporary coating 35 that follow-up plating material depends on, as shown in Figure 3A;
Moreover, form at least one metal level by modes such as plating or etchings at the upper surface of substrate 31, and the metal level that is positioned at predetermined pattern place on line 333 promptly becomes the patterned circuit (circuit) 33 that can include pin, pin shoulder, outer pin, passive device electrode connection pad, measurement circuit or calibrating terminal, remove photoresistance 315 and temporary coating 35 afterwards again, shown in Fig. 3 B.These patterned circuit 33 selected materials must have good zygosity with the formed projection of IC wafer, and in follow-up when substrate 31 is divested, the characteristic that can be divested together not is so can select multilayer or the single layer structure be made up of gold, nickel, copper, palladium, platinum, tungsten, nickel-Jin, palladium-nickel, titanium-palladium-Jin, titanium-platinum-Jin, chromium-nickel-Jin, titanium-tungsten-Jin or above-mentioned material composition;
Continue, it is made that pin 33 upper surfaces in the diaphragm 37 of reserving the wafer hole is attached at, diaphragm 37 may be selected to be macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material or acryl resin; And in this step, the part of interior pin 33 will be exposed to diaphragm 37 outer assembling operations in order to subsequent wafer, shown in Fig. 3 C;
Attach the conductive layer 39 of an anisotropy conducting film (ACF) or anisotropic conductive (ACP) in the surface of interior pin 33 again; And finished the upset of metal coupling IC wafer 41 or passive device with one, cause its metal coupling 43 and corresponding interior pin 33 contrapositions, heat and pressure process is carried out both and engaged through one again, and then toast (post-cure) and sealing steps such as (potting) to finish permanent connection of metal coupling 43 and 33 of interior pins, and IC wafer (or passive device) 41 can pass through electrode connection pad 413, projection 43, and conductive layer 39 and electrically connecting with interior pin 33, and can improve the reliability of product by this, shown in Fig. 3 D;
At last; utilize wet type or dry-etching mode that substrate 31 is divested; be located at interior pin 33 lower surfaces by the made soft anti-welding protective paint 45 (or diaphragm) of soft epoxy resin, the acryl resin of photosensitive type or hot baking type with wet type coating or dry type laminating type with one again; be somebody's turn to do interior pin 33 with protection, shown in Fig. 3 E.Certainly; form in the step at this anti-welding protective paint 45; can be kept at outer pin, measurement circuit or calibrating terminal area of space; or impose zinc-plated, nickel or gold is handled according to product demand; joint operation in order to follow-up external pin, measurement circuit or calibrating terminal; so can reach the making of soft chip package base board and the purpose of interior pin connection process simultaneously, shown in Fig. 3 E.
Because the making of patterned circuit and interior pin connection process all carry out in the higher substrate of a hardness and finish in this embodiment, therefore be not difficult on the location when engaging, the aligning (Alignment) with the IC wafer, and but nationality carries out connection process by the existing board that carries out the chip bonding technology, not only can reduce the degree of difficulty of interior pin connection process, also can reduce the cost of processing procedure.In addition, the making of circuit replaces traditional etching mode with plating mode, can significantly improve the fine circuit making ability of soft chip package base board and the distribution density of soft wafer module COF.
Certainly, pin 33 and the connection process system of projection 43 can select for use hot press (thermo-compression bonding), ultrasonic waves to engage that (ultra-sonic bonding), hot ultrasonic waves engage (thermo-sonic bonding), laser joint (laser bonding), scolding tin backflow modes such as (solder refolw) is finished in of the present invention.
In addition, seeing also Fig. 4, is the structure cut-away view of further embodiment of this invention; Institute of the present invention exposure technology also can be applicable to as in the automatic joining technique of soft winding (TAB), as long as when step 3D, need not under metal pins 33 peripheries are added the situation of conductive layer 39, directly will finish IC wafer 41 upsets of metal couplingization, cause its metal coupling 43 with corresponding in pin 33 contrapositions, again through heat, pressurize, subsequent steps such as baking and sealing get final product.
Again, the diaphragm 37 of the foregoing description can select one be located at wet type coating or dry type laminating type by the made soft anti-welding protective paint of soft epoxy resin, the acryl resin of photosensitive type or hot baking type in pin 33 upper surfaces; And the foregoing description.Pin 33 in soft anti-welding protective paint also can be protected by the lower surface that diaphragm made with macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material or acryl resins and that reserved the wafer hole is located at metal electrode 33.
And in this embodiment, owing to be in a substrate, to finish the making of patterned circuit and the connection process of interior pin equally, the degree of difficulty of pin connection process in therefore not only can reducing, reduce processing procedure cost, and significantly improve the fine circuit making ability of soft chip package base board and the distribution density of soft wafer module COF.
In addition, seeing also Fig. 5 A to Fig. 5 D, is that the present invention is at each step structure cut-away view of an embodiment who makes soft winding; As shown in the figure, the soft winding that the disclosed major technique of the present invention can be applied in the TAB technology is equally made, and its key step system includes:
At first, one substrate 31 is provided equally, part upper surface in substrate 31 defines a patterned circuit position 333 according to design planning, the substrate 31 other parts surfaces that are not planned as patterned circuit position 333 then nationality are covered by a photoresistance 315, and the lower surface formation one in substrate 31 can intercept the temporary coating 35 that follow-up plating material depends on, shown in Fig. 5 A;
Moreover, form at least one metal level by modes such as plating or etchings at the upper surface of substrate 31, and the metal level that is positioned at predetermined pattern place on line 333 promptly becomes the patterned circuit 33 that can include pin, pin shoulder, outer pin, measurement circuit or calibrating terminal, remove photoresistance 315 and temporary coating 35 afterwards again, shown in Fig. 5 B; Continue, impose diaphragm 57 by coating or pressing mode, electroplate the patterned circuit 33 that forms with protection, shown in Fig. 5 C in patterned circuit 33 tops; And
At last; with wet type or dry-etching mode substrate 31 is removed; and soft anti-welding protective paint 36 utilized wet type coating or dry type laminating type protection patterned circuit 33; and reserve outer pin field and engage the operation (not shown), so can finish the making of reaching soft winding in order to follow-up outer pin.And the surface treatment of inside and outside pin field can impose zinc-plated, nickel or gold is handled according to product demand, engages operation in order to follow-up inside and outside pin, shown in Fig. 5 D.
In this embodiment, because the making of patterned circuit 33 is all carried out in the higher substrate of a hardness and is finished, and the making of circuit replaces traditional etching mode with plating mode, and the fine circuit that therefore can significantly improve soft winding is made ability, distribution density, reached and reduce its cost of manufacture.
Only the above, it only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, the equalization of described shape, structure, feature and spirit being done according to the present invention changes and modifies such as, all should be included in the claim scope of the present invention.
Claims (24)
1. the manufacture method of a soft type encapsulating structure, its key step system includes:
One substrate is provided;
Part upper surface in this substrate forms default patterned circuit;
The one IC wafer of having finished projectionization is provided, and the projection of this IC wafer is aimed at patterned circuit corresponding with it, and cause projection to engage with corresponding patterned circuit; And
Remove this substrate, and form a diaphragm on a wherein surface of patterned circuit.
2. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: still can include the following step:
Form a conductive layer in the surface of patterned circuit, and electrically connect to cause projection and patterned circuit on the IC wafer by this conductive layer.
3. the manufacture method of soft type encapsulating structure as claimed in claim 2 is characterized in that: these conduction series of strata are optional selects anisotropy conducting film (ACF), anisotropic conductive (ACP) and knockdown one of them is made.
4. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: the formation method system of this patterned circuit includes:
Form a photoresistance in the substrate other parts surface that is not defined as patterned circuit; Form at least one metal level with plating mode at upper surface of substrate, to become this patterned circuit; And
Remove this photoresistance.
5. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: this patterned circuit system can include interior pin, pin shoulder, outer pin, passive device electrode connection pad, measurement circuit, calibrating terminal and knockdown one of them person thereof.
6. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: this patterned circuit system can select by gold, nickel, copper, palladium, platinum, tungsten, nickel-Jin, palladium-nickel, titanium-palladium-Jin, titanium-platinum-Jin, chromium-nickel-Jin, titanium-tungsten-Jin and knockdown one of them made person thereof.
7. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: still can include the following step:
Another surface portion zone in patterned circuit forms a diaphragm.
8. the manufacture method of soft type encapsulating structure as claimed in claim 7 is characterized in that: one of them made person of macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material, acryl resin and composite type thereof can select in this diaphragm system.
9. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: still can include the following step:
Another surface portion zone in patterned circuit forms a soft anti-welding protective paint.
10. the manufacture method of soft type encapsulating structure as claimed in claim 9 is characterized in that: one of them made person of soft epoxy resin and acryl resin can select in this soft anti-welding protective paint system.
11. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: after removing this substrate, also can form a soft anti-welding protective paint on the lower surface of patterned circuit.
12. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: still can include the following step:
One substrate is provided, and forms a temporary coating in the lower surface of this substrate; And
After patterned circuit forms, remove this temporary coating.
13. the manufacture method of soft type encapsulating structure as claimed in claim 1 is characterized in that: copper, aluminium, iron, nickel, zinc, steel, stainless steel and knockdown one of them made person thereof can select in this substrate system.
14. the manufacture method of a soft type encapsulating structure, its key step system includes:
One substrate is provided;
Part upper surface in this substrate forms default patterned circuit; Formation one diaphragm is gone up on a wherein surface in patterned circuit; And
Remove this substrate, and on another surface portion zone of this patterned circuit, form an anti-welding protective paint.
15. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: the formation method system of this patterned circuit includes:
Form a photoresistance in the substrate other parts surface that is not defined as patterned circuit;
Form at least one metal level with plating mode at upper surface of substrate, to become this patterned circuit;
Remove this photoresistance.
16. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: this patterned circuit system can include interior pin, pin shoulder, outer pin, passive device electrode connection pad, measurement circuit, calibrating terminal and knockdown one of them person thereof.
17. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: this patterned circuit system can select by gold, nickel, copper, palladium, platinum, tungsten, nickel-Jin, palladium-nickel, titanium-palladium-Jin, titanium-platinum-Jin, chromium-nickel-Jin, titanium-tungsten-Jin and knockdown one of them made person thereof.
18. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: one of them made person of macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material, acryl resin and composite type thereof can select in this diaphragm and anti-welding protective paint system.
19. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: still can include the following step:
One substrate is provided, and forms a temporary coating in the lower surface of this substrate; And
After patterned circuit forms, remove this temporary coating.
20. the manufacture method of soft type encapsulating structure as claimed in claim 14 is characterized in that: copper, aluminium, iron, nickel, zinc, steel, stainless steel and knockdown one of them made person thereof can select in this substrate system.
21. a soft type encapsulating structure is characterized in that: it mainly is to include:
One includes the patterned circuit of interior pin at least;
Surface in this patterned circuit is provided with a diaphragm; And
Another surface portion zone in this patterned circuit is provided with an anti-welding protective paint.
22. soft type encapsulating structure as claimed in claim 21 is characterized in that: this patterned circuit still can include outer pin, pin shoulder, passive device electrode connection pad, measurement circuit, calibrating terminal and knockdown one of them person thereof.
23. soft type encapsulating structure as claimed in claim 21 is characterized in that: this patterned circuit system can select by gold, nickel, copper, palladium, platinum, tungsten, nickel-Jin, palladium-nickel, titanium-palladium-Jin, titanium-platinum-Jin, chromium-nickel-Jin, titanium-tungsten-Jin and knockdown one of them made person thereof.
24. soft type encapsulating structure as claimed in claim 21 is characterized in that: one of them made person of macromolecule glue membrane materials such as Polyimide, poly-ethamine, epoxy resin, polyester material, acryl resin and composite type thereof can select in this diaphragm and anti-welding protective paint system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106484 CN1442891A (en) | 2002-03-04 | 2002-03-04 | Soft type encapsulating structure and its making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106484 CN1442891A (en) | 2002-03-04 | 2002-03-04 | Soft type encapsulating structure and its making method |
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| CN1442891A true CN1442891A (en) | 2003-09-17 |
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| CN 02106484 Pending CN1442891A (en) | 2002-03-04 | 2002-03-04 | Soft type encapsulating structure and its making method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106576428A (en) * | 2014-08-29 | 2017-04-19 | 住友金属矿山株式会社 | Method for manufacturing flexible copper wiring board, and flexible copper-clad layered board with support film used in said copper wiring board |
-
2002
- 2002-03-04 CN CN 02106484 patent/CN1442891A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106576428A (en) * | 2014-08-29 | 2017-04-19 | 住友金属矿山株式会社 | Method for manufacturing flexible copper wiring board, and flexible copper-clad layered board with support film used in said copper wiring board |
| CN106576428B (en) * | 2014-08-29 | 2019-10-18 | 住友金属矿山株式会社 | The manufacturing method of flexible copper wiring plate and its flexible copper-clad laminate used with support membrane |
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