CN1434326A - Period polarized magnesium doped lithium niobate all light switch and preparation process thereof - Google Patents
Period polarized magnesium doped lithium niobate all light switch and preparation process thereof Download PDFInfo
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- CN1434326A CN1434326A CN03102423A CN03102423A CN1434326A CN 1434326 A CN1434326 A CN 1434326A CN 03102423 A CN03102423 A CN 03102423A CN 03102423 A CN03102423 A CN 03102423A CN 1434326 A CN1434326 A CN 1434326A
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- doped lithium
- lithium niobate
- optical switch
- polarization
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Abstract
The invention refers to a new periodic polarized magnesian lithium niobate acid all optical switch and the making method. The project: use the high-magnesian biobic acid crystal, cut into the pieces, polish, polarize and etch the piece to make the reverse grating area and the proton anneal exchange optical wave-guide, and thus get the all-optical switch. it can realize the THz modulation.
Description
Technical field
The present invention relates to the design of the period polarized mg-doped lithium niobate all-optical switch of the invention of photoswitch, particularly a kind of novelty, belong to the optic communication device field.
Technical background
The many wavelength-division multiplex of optical fiber dense type (DWDM) can improve the Optical Fiber Transmission capacity, the effective all-optical switch of complicated high-speed light transmission network needs that comprises a plurality of nodes directly switches and the shutoff optical information, prevent wavelength blocker, wavelength can be reused, improve the dirigibility of network management.The photoswitch that now is used for the optical information processing technology roughly has two big classes: mechanical type and optical profile type.Wherein mechanical optical switch develops early, and this type of switching response speed is low, generally needs millisecond, though it can satisfy the test job requirement, can not satisfy the requirement of audio frequency, Video transmission system, let alone satisfy the needs of high speed optical fiber communication.And development recent years of optical profile type photoswitch is very rapid, research at present mainly concentrates on the integrated light guide formula photoswitch that the field that utilizes crystal causes the birefringence effect development, ferroelectric domain inversion structure cascade nonlinear effect photoswitch, Mach-Zender interferometer type photoswitch, hot light photoswitch etc.
Summary of the invention
The technical scheme that the purpose of this invention is to provide a kind of period polarized mg-doped lithium niobate all-optical switch design of novelty.Technical scheme
Use highly magnesium-doped lithium columbate crystal material, 3 crystal orientation X, Y, Z section along crystal, obtain～wafer of 20 * 25 * 1.0mm, wafer is carried out rubbing down processing, makes fan-shaped variable period polarization and periodic reversal optical grating construction, carry out the proton exchange annealing process and handle, the all-optical switch of the proton-exchanged optical waveguide structure that obtains annealing.
Wafer is processed, need the design photo mask board, the design of photo mask board at first is to finding the solution with the coupling mode equations of difference frequency cascaded second-order nonlinear interaction with frequency, wavelength and the refractive index that to control light, flashlight, conversion light wave simultaneously are updated in the accurate phase matching formula, satisfying under the accurate phase-matching condition, drawing the cycle of polarization structure grating and along total grating length of optical direction.Carve mask plate according to resulting value design cycle polarization grating structured light.
The invention has the beneficial effects as follows: have fast full optical transparency, speed is fast, noise is low, required control luminous power is little, and can realize the photoswitch of characteristics such as THz modulation.It is low and because the thin shortcoming such as processing that is difficult for of the high used crystal chip of polarized electric field has further improved the output exchange efficiency to have overcome intrinsic lithium columbate crystal anti-photorefraction performance simultaneously, makes it have better performance and application prospect in All-Optical Communication Network.
Description of drawings
Accompanying drawing: period polarized mg-doped lithium niobate all-optical switch synoptic diagram
Among the figure 1, signal light-wave 2, control light wave 3, conversion light wave 4, period polarized mg-doped lithium niobate structure 5, move back
The fire proton-exchanged optical waveguide
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is made specific description: as shown in drawings, it is period polarized mg-doped lithium niobate all-optical switch, it is to use highly magnesium-doped lithium columbate crystal to cut to the end along 3 direction X, Y, Z of crystal, be of a size of～20 * 25 * 1.0mm, the concentration of mixing magnesium is＞5mol%.Crystal is carried out rubbing down processing, makes fan-shaped variable period polarization and periodic reversal optical grating construction, carry out the proton exchange annealing process and handle, the all-optical switch of the proton-exchanged optical waveguide that obtains annealing, its concrete step of preparation process is as follows:
(1) wafer ± Z face is carried out the optics rubbing down
(2) carry out photoetching on wafer+Z surface
(3) etch metal A l electrode by designed mask plate structure, it is anti-evenly to smear floor height insulation then on electrode
Erosion glue
(4) at room temperature, with wafer ± the Z face links to each other with the NaCl liquid electrode, receives on the pulse power, and it is carried out the utmost point
Change, the sample after the polarization is carried out striping and cleaning
(5), put it into and fill at wafer+Z surface polarization counter-rotating grating region monox grizzly bar on the optical direction etching
In the benzoic quartz glass ware, vessel are put into carry out proton exchange in the constant temperature oven at a certain temperature,
Put it in the annealing furnace fast behind the exchange certain hour and anneal, erode monox then, moved back
The fire proton-exchanged optical waveguide.
(6) logical light end face is carried out the processing of optics rubbing down, obtain period polarized mg-doped lithium niobate all-optical switch.
Claims (6)
1. period polarized mg-doped lithium niobate all-optical switch, it is characterized in that: switch is～wafer of 20 * 25 * 1.0mm, highly magnesium-doped lithium columbate crystal material has the all-optical switch of fan-shaped variable period polarization structure (4), annealing proton-exchanged optical waveguide (5), strong anti-photorefraction ability and lower positive polarization electric field structure.
2. period polarized mg-doped lithium niobate all-optical switch according to claim 1 is characterized in that: the mixing magnesium density and be＞5mol% of described highly magnesium-doped lithium columbate crystal.
3. the preparation technology of a period polarized mg-doped lithium niobate all-optical switch, it is characterized in that: use highly magnesium-doped lithium columbate crystal, 3 crystal orientation X, Y, Z along crystal are cut into～wafer of 20 * 25 * 1.0mm, wafer is carried out rubbing down processing, polarization, fabrication cycle counter-rotating grating region structure (4), carry out the proton exchange annealing process and handle, proton-exchanged optical waveguide (5) obtains annealing.
4. the preparation technology of a period polarized mg-doped lithium niobate all-optical switch, it is characterized in that: the concentration that described highly magnesium-doped lithium columbate crystal is mixed magnesium is＞5mol%.
5. the preparation technology of period polarized mg-doped lithium niobate all-optical switch according to claim 3 is characterized in that: described rubbing down processing, polarization, annealing in process to wafer are divided into following process steps successively:
(1) to its ± the Z face carries out the optics rubbing down
(2) carry out photoetching on wafer+Z surface
(3) etch metal A l electrode by designed mask plate structure, it is anti-evenly to smear floor height insulation then on electrode
Erosion glue
(4) at room temperature, with wafer ± the Z face links to each other with the NaCl liquid electrode, receives on the pulse power, and it is carried out the utmost point
Change, the sample after the polarization is carried out striping and cleaning
(5), put it into and fill at wafer+Z surface polarization counter-rotating grating region monox grizzly bar on the optical direction etching
In the benzoic quartz glass ware, vessel are put into carry out proton exchange in the constant temperature oven at a certain temperature,
Put it in the annealing furnace fast behind the exchange certain hour and anneal, erode monox then, moved back
The fire proton-exchanged optical waveguide
(6) logical light end face is carried out the processing of optics rubbing down, obtain period polarized mg-doped lithium niobate all-optical switch
6. the preparation technology of period polarized mg-doped lithium niobate all-optical switch according to claim 5, it is characterized in that: the design of described mask plate is at first to finding the solution with the coupling mode equations of difference frequency cascaded second-order nonlinear interaction with frequency, wavelength and the refractive index that to control light, flashlight, conversion light wave simultaneously are updated in the accurate phase matching formula, satisfying under the accurate phase-matching condition, draw the cycle of polarization structure grating and, carve mask plate according to resulting value design cycle polarization grating structured light along total grating length of optical direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031024238A CN1183402C (en) | 2003-01-28 | 2003-01-28 | Period polarized magnesium doped lithium niobate all light switch and preparation process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031024238A CN1183402C (en) | 2003-01-28 | 2003-01-28 | Period polarized magnesium doped lithium niobate all light switch and preparation process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1434326A true CN1434326A (en) | 2003-08-06 |
| CN1183402C CN1183402C (en) | 2005-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031024238A Expired - Fee Related CN1183402C (en) | 2003-01-28 | 2003-01-28 | Period polarized magnesium doped lithium niobate all light switch and preparation process thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362418C (en) * | 2005-07-21 | 2008-01-16 | 上海交通大学 | Manufacturing method of wavelength regulatable broadband full optical wave length converter |
| CN100454126C (en) * | 2004-06-16 | 2009-01-21 | 日本碍子株式会社 | Production method for polarization inversion unit |
| CN103901698A (en) * | 2014-02-27 | 2014-07-02 | 中国科学院福建物质结构研究所 | Electrode structure manufacturing method for suppressing reversal domain lateral growth in ferroelectric crystal material polarization process |
| CN108563083A (en) * | 2018-06-05 | 2018-09-21 | 河海大学常州校区 | Non linear metal coats waveguide and its full photoabsorption modulation light switchs realization device |
| CN109962396A (en) * | 2019-01-03 | 2019-07-02 | 天津大学 | A kind of terahertz emission source and preparation method thereof |
-
2003
- 2003-01-28 CN CNB031024238A patent/CN1183402C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454126C (en) * | 2004-06-16 | 2009-01-21 | 日本碍子株式会社 | Production method for polarization inversion unit |
| CN100362418C (en) * | 2005-07-21 | 2008-01-16 | 上海交通大学 | Manufacturing method of wavelength regulatable broadband full optical wave length converter |
| CN103901698A (en) * | 2014-02-27 | 2014-07-02 | 中国科学院福建物质结构研究所 | Electrode structure manufacturing method for suppressing reversal domain lateral growth in ferroelectric crystal material polarization process |
| CN103901698B (en) * | 2014-02-27 | 2017-03-08 | 中国科学院福建物质结构研究所 | The production of electrode structure of compacting reversion farmland domain lateral growth in a kind of polarization process in ferroelectric crystal materials |
| CN108563083A (en) * | 2018-06-05 | 2018-09-21 | 河海大学常州校区 | Non linear metal coats waveguide and its full photoabsorption modulation light switchs realization device |
| CN108563083B (en) * | 2018-06-05 | 2021-07-13 | 河海大学常州校区 | Nonlinear metal-clad waveguide and all-optical modulation optical switch implementation device thereof |
| CN109962396A (en) * | 2019-01-03 | 2019-07-02 | 天津大学 | A kind of terahertz emission source and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1183402C (en) | 2005-01-05 |
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