CN1433959A - Process for combustion synthesizing high alpha phase superfine silicon carbide powder and silicon nitride whisker - Google Patents
Process for combustion synthesizing high alpha phase superfine silicon carbide powder and silicon nitride whisker Download PDFInfo
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- CN1433959A CN1433959A CN 02100195 CN02100195A CN1433959A CN 1433959 A CN1433959 A CN 1433959A CN 02100195 CN02100195 CN 02100195 CN 02100195 A CN02100195 A CN 02100195A CN 1433959 A CN1433959 A CN 1433959A
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- powder
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- whisker
- si3n4
- silica flour
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Abstract
The present invention provides a SHS process for preparing high alpha-phase Si3N4 powder and Si3N4 whiskers. For preparation of high alpha-phase powder the additive alpha-Si3N4 content is 10-100 wt% of silicon powder, NH4F+NH4Cl+CaF2 content is 1-60 wt% of silicon powder content, the nitrogen gas pressure for retaining SHS reaction is 1-30 MPa, the specific surface area of the obtained ultrafine Si3N4 powder body is in the range of 2-6 sq.m/g, and its equivalent grain size of adjustable in the range of 0.3-0.9 micrometer. For preparation of Si3N4 whiskers beta-Si3N4 whisker reactant component is Si powder, beta-Si3N4 powder is 5-15 wt% of silicon powder content, NH4Cl is 1-60 wt% of silicon powder content and analytically pure Al powder is 0.5-5 wt% of silicon powder content.
Description
The present invention relates to a class by the ultra-fine Si of high α phase content of synthetic (self-propagatinghigh-temperaturesynthesis, SHS) method preparation of self propagating high temperature
3N
4Powder and α-Si
3N
4Whisker and β-Si
3N
4Whisker.
Since The former Russian scholar A.G.Merzhanov in 1967 and I.P.Borovinskaya found the SHS phenomenon, SHS was one of most active research direction in Materials Science and Engineering field always.Its basic characteristics are: the outside necessary energy that provides is provided, bring out the local chemical reaction (this process be called light) that takes place of high heat-producing chemical reaction system, form chemical reaction forward position (being combustion wave), after this chemical reaction is under self exothermic support, continue to move ahead, show as combustion wave and spread whole reaction system, last synthetic materials.The most outstanding advantage of SHS synthesis technique be save energy, with low cost, synthetics purity is high.So adopt the product of SHS explained hereafter to develop into more than 500 kinds so far.But mainly by solid-solid reaction, its reaction mechanism is fairly simple for these products, and the technology ratio is easier to control.And the burning of gas-solid system is synthetic, and particularly the burning of nitrogen-silicon system is synthetic, reacts under condition of high voltage by gas phase N
2Reaction is carried out with solid phase Si, and intrapore gas is not enough can to carry out fully in the impact reaction, and the thawing of solid phase can hinder the infiltration of gas.Its reaction mechanism is more complicated, and technology is restive, is difficult to especially obtain the ultra-fine Si of high α phase content
3N
4Powder.
Silicon nitride is a kind of non-oxidized substance mineral of synthetic.Because silicon nitride has characteristics such as proportion is low, thermal expansion is little, hardness is big, Young's modulus is high, good heat resistance, its mechanical property and thermal property obviously are better than general oxide ceramics.Can produce various performance requriementss by technologies such as reaction sintering, hot pressed sintering, pressureless sintering and heavy sintering, difform silicon nitride ceramics and nitride silicon based complex phase ceramic goods, silicon nitride ceramics and nitride silicon based complex phase ceramic goods have become a kind of important heat-resisting, high-strength, wear-resisting, corrosion resistant engineering ceramic material.
Relate to the ultra-fine Si of combustion synthesizing high alpha phase content
3N
4The international monopoly of powder has SHS inventor A.G.Merzhanov academician at " preparation method of high α phase content silicon nitride " (the US Patent5032370) by name of various countries applications, is CN1017609B in the patent No. of China.But the synthetic sample weight of this patent is very little, is not suitable for the large dimension specimen large-scale production, can not be used for the ultra-fine Si of high α phase content
3N
4The production of powder.The United States Patent (USP) of U.S. Holt J.Birch etc. is " with the synthetic thin brilliant α-Si of burning synthesis method
3N
4(US4944930).This patent adopts the alkali-metal thing that iterates as nitrogenous source, and the basic metal of synthetics influences high-temperature behavior.These patents all only relate to powder, do not relate to Si
3N
4Whisker.
Summary of the invention:
The present invention solves and uses the raw material identical with prior art, adopts the simplest technology and equipment, the step that simplifies the operation, and preparation α phase content is greater than the Si of 90wt%
3N
4Ceramic powder, α-Si
3N
4Whisker and β-Si
3N
4Whisker.Its technical process is as follows:
(1) powder is by specifying the proportioning preparation, (2) ball milling 6 hours in the alcohol medium, and the oven dry of (3) powder is crossed 100 mesh sieves and (4) the powder combustion chamber of packing into is lighted.
Of the present invention theing contents are as follows:
For high α phase Si
3N
4The preparation of powder, additive α-Si
3N
4Content is the 10-100wt% of silica flour content, NH
4F+NH
4Cl+CaF
2Content be the 1-60wt% of silica flour content, wt% is weight percentage, and keeps the nitrogen pressure 1--30MPa of SHS reaction; Prepared ultra-fine Si
3N
4Powder by adjustment diluent addition and proportioning, and is adjusted synthetic technological condition, Si
3N
4The powder specific surface is at 2-6m
2In/g the scope, equivalent grain size is adjustable in the 0.3-0.9 mu m range.
For Si
3N
4The preparation of whisker, β-Si
3N
4Whisker reactant composition is the Si powder, β-Si
3N
4Powder is the 5-15wt% of silica flour content, the NH of the 1-60wt% of silica flour content
4The pure Al powder of the analysis of the 0.5-5wt% of Cl and silica flour content; α-Si
3N
4The reactant composition of whisker should be Si powder, α-Si
3N
4Powder is the NH of the 1-60wt% of the 5-15wt% of silica flour content and silica flour content
4F, the nitrogen pressure of reaction is answered 5--20MPa.
The present invention synthesizes high α phase Si
3N
4Powder and Si
3N
4The method of whisker, the method that has adopted multicomponent reactive diluent and inert additwe to combine by addition and the synthetic technological condition of the various diluents of strict control, has made α up to 93% ultra-fine Si
3N
4Powder, its specific surface is at 2-6m
2In/g the scope, equivalent grain size is adjustable in the 0.3-0.9 mu m range.
Synthesize Si by further investigation with the SHS technology
3N
4Mechanism and control technological parameter, synthetic SHSSi
3N
4, they have different leading phases and the α-Si of pattern
3N
4Powder, α-Si
3N
4Whisker and β-Si
3N
4Whisker is to satisfy different purposes and needs.
Basic parameter: recovery rate, powder at least 95%, whisker at least 60%; Powder particle size is 0.3-0.9 μ m, and specific surface is 2-6m
2/ g; β-Si
3N
4Whisker, diameter 1-3 μ m, long 100-1000 μ m; α-Si
3N
4Whisker, diameter 0.3-1.2 μ m, long 110-150 μ m.
Ultimate principle of the present invention is summarized as follows:
Be difficult to form combustion wave after the Si powder is lighted and spread in high pressure nitrogen, and can only form on the biscuit top layer the thick grey black Si of the about 1-2mm of one deck
3N
4Layer, and the centre accompanies a large amount of Si beads.This is because the melting of a large amount of Si is reunited, and has hindered N
2Thereby the infiltration to reaction front causes " stopping working ".This is a kind of Lock-in " quenching " phenomenon.Reunite for the fusion of avoiding Si, improve the α phase content in the reaction product silicon nitride, promote the crystalline growth, in silica flour, sneak into a certain amount of α-Si
3N
4, NH
4F+NH
4Cl+CaF
2, respectively as reactive thinner and inert diluent.α-Si wherein
3N
4Content is the 10-100wt% of silica flour content, NH
4F+NH
4Cl+CaF
2Content be the 1-60wt% of silica flour content.The nitrogen pressure of reaction should be greater than 1MPa.
Synthetic β-Si
3N
4The reactant composition of whisker should be Si powder, β-Si
3N
4Powder is the 5-15wt% of silica flour content, the NH of the 1-60wt% of silica flour content
4The pure Al powder of the analysis of the 0.5-5wt% of Cl and silica flour content.Synthetic α-Si
3N
4The reactant composition of whisker should be Si powder, α-Si
3N
4Powder is the NH of the 5-10wt% of the 5-15wt% of silica flour content and silica flour content
4F.The nitrogen pressure of reaction should be greater than 5MPa, the α-Si that makes
3N
4The whisker long axis direction is [001].
Description of drawings:
Fig. 1 is SHS of the present invention reaction chamber structural representation, ignition wire 1, reactant base substrate 2, thermometric thermopair 3, sample table 4.
Embodiment:
The pure silicon nitride of the synthetic high α phase of example 1:SHS
It is as follows to test used powder property: the Si powder, and the mass percent of impurities (down together) is: Fe (1.02), Al (<0.01), Ca (<0.01), Mg (<0.01), O (0.1), granularity is 5~25 μ m.Si
3N
4Powder, α phase content>93%, free Si<0.5%, N (36.5), O (2.2), Mg (0.01), Ca (0.02), Al (<0.005), Fe (0.012).NH
4F, analytical pure, NH
4F>99.5%, SO
4(0.005), PO
4(0.0005), K (0.005), Na (0.005), Ca (0.001), Mg (0.001), Fe (0.0005), water-insoluble (0.005).NH
4Cl, same NH
4F.CaF
2, analytical pure, CaF
2Be no less than 98.0%, weight loss on drying (0.4%), Cl (0.01), SO
4(0.05), N (0.005), Si (0.01), Fe (0.003), Pb (0.003).
When reactant ratio as follows: Si powder 69wt%, Si
3N
4Powder 20wt%, NH
4F and NH
4Cl is 5wt%, CaF
2Be 1wt%.Under the 5MPa nitrogen pressure, light prepared Si
3N
4Powder α is up to 91%, and its specific surface is 3-6m
2/ g, equivalent grain size is 0.3-0.7 μ m.
When reactant ratio as follows: Si powder 73.4wt%, Si
3N
4Powder 20wt%, NH
4F and NH
4Cl is 3wt%, CaF
2Be 0.6wt%.Under the 5MPa nitrogen pressure, light prepared Si
3N
4Powder α is up to 88%, and its specific surface is 3-6m
2/ g, equivalent grain size is 0.3-0.7 μ m.
Synthetic α-the Si of example 2:SHS
3N
4Whisker
Synthetic α-Si
3N
4The used powder of whisker is with the pure silicon nitride of synthetic high α phase.
When reactant ratio as follows: Si powder 86wt%, α-Si
3N
4Powder 8wt%, NH
4F is 6wt%.Under the 7MPa nitrogen pressure, light prepared α-Si
3N
4The long 30-150 μ of whisker m, diameter 0.3-1.0 μ m, draw ratio 30-500.
Synthetic β-the Si of example 3:SHS
3N
4Whisker
Synthetic β-Si
3N
4Si powder and NH that whisker is used
4Cl is with the powder of the pure silicon nitride of synthetic high α phase.β-Si
3N
4Powder, free Si<0.5%, N (36.5), O (2.2), Mg (0.01), Ca (0.02), Al (<0.005), Fe (0.012), the Al powder is pure for analyzing, Al>99.5%.
When reactant ratio as follows: Si powder 87wt%, β-Si
3N
4Powder 10wt%, NH
4F is 2wt%.Under the 7MPa nitrogen pressure, light prepared β-Si
3N
4Diameter of whiskers 1-3 μ m, long 300-1000 μ m.
Claims (2)
1, a kind of from spreading synthetic high α phase Si
3N
4Powder and Si
3N
4The method of whisker is characterized in that: for high α phase Si
3N
4The preparation of powder, additive α-Si
3N
4Content is the 10-100wt% of silica flour content, additive NH
4F+NH
4Cl+CaF
2Content be the 1-60wt% of silica flour content, wt% is weight percentage, and adjusts in the nitrogen pressure 1--30MPa scope of SHS reaction; Prepared ultra-fine Si
3N
4Powder is by adjusting additive addition and proportioning, Si
3N
4The powder specific surface is at 2-6m
2In/g the scope, equivalent grain size is in the 0.3-0.9 mu m range.
2, a kind of preparation method such as right 1 is characterized in that: for Si
3N
4The preparation of whisker, β-Si
3N
4Whisker reactant composition is the Si powder, β-Si
3N
4Powder is the 5-15wt% of silica flour content, the NH of the 1-60wt% of silica flour content
4The pure Al powder of the analysis of the 0.5-5wt% of Cl and silica flour content; α-Si
3N
4The reactant composition of whisker should be Si powder, α-Si
3N
4Powder is the NH of the 1-60wt% of the 5-15wt% of silica flour content and silica flour content
4F, the nitrogen pressure of reaction is answered 5--20MPa.
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CN1209281C CN1209281C (en) | 2005-07-06 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100415641C (en) * | 2005-12-21 | 2008-09-03 | 北京科技大学 | Method for synthesizing isotropic silicon nitride powder adopting layer type material-distribution |
CN102060544A (en) * | 2010-11-11 | 2011-05-18 | 北京科技大学 | Quick crystallization method for realizing amorphous silicon nitride powder by taking silica powder as additive |
CN102485645A (en) * | 2010-12-02 | 2012-06-06 | 中国科学院理化技术研究所 | Method for rapidly burning and synthesizing silicon nitride powder by taking foaming agent capable of generating nitrogen during decomposition as additive |
CN105483823A (en) * | 2015-12-04 | 2016-04-13 | 烟台同立高科新材料股份有限公司 | Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof |
-
2002
- 2002-01-22 CN CN 02100195 patent/CN1209281C/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100415641C (en) * | 2005-12-21 | 2008-09-03 | 北京科技大学 | Method for synthesizing isotropic silicon nitride powder adopting layer type material-distribution |
CN102060544A (en) * | 2010-11-11 | 2011-05-18 | 北京科技大学 | Quick crystallization method for realizing amorphous silicon nitride powder by taking silica powder as additive |
CN102060544B (en) * | 2010-11-11 | 2015-06-17 | 北京科技大学 | Quick crystallization method for realizing amorphous silicon nitride powder by taking silica powder as additive |
CN102485645A (en) * | 2010-12-02 | 2012-06-06 | 中国科学院理化技术研究所 | Method for rapidly burning and synthesizing silicon nitride powder by taking foaming agent capable of generating nitrogen during decomposition as additive |
CN102485645B (en) * | 2010-12-02 | 2013-06-05 | 中国科学院理化技术研究所 | Method for rapidly burning and synthesizing silicon nitride powder by taking foaming agent capable of generating nitrogen during decomposition as additive |
CN105483823A (en) * | 2015-12-04 | 2016-04-13 | 烟台同立高科新材料股份有限公司 | Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof |
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