CN1424373A - Composite abradant and composition and preparation thereof - Google Patents
Composite abradant and composition and preparation thereof Download PDFInfo
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- CN1424373A CN1424373A CN 01144315 CN01144315A CN1424373A CN 1424373 A CN1424373 A CN 1424373A CN 01144315 CN01144315 CN 01144315 CN 01144315 A CN01144315 A CN 01144315A CN 1424373 A CN1424373 A CN 1424373A
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- silicic acid
- silica gel
- cerium salt
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Abstract
A composite abrading agent for processing semiconductor is prepared from silica gel, silicic acid and Ce salt soluble to silicic acid. Its composition and its preparing process and also disclosed.
Description
Technical field
The present invention relates to a kind of multiple grinding agent and be used to prepare the composition and the method for this multiple grinding agent.
Background technology
Past because cerium oxide has excellent abrasiveness, therefore can be applicable in the semiconductor machining, again because of cerium oxide for SiO
2Sizable material removal rate is arranged, so be usually used in shallow trench dielectric layer flatening step in the semiconductor machining.
In recent years, there is the patent of many synthetic cerium oxide powders to deliver successively, for example United States Patent (USP) discloses a kind of method of synthetic cerium oxide for No. 5543126, it was included in the pH value at 8 to 11 o'clock, cerous hydroxide (IV) and Nitrates solution are placed closed pressure vessel, and controlled temperature between 100 to 200 ℃ to obtain the crystallinity cerium oxide.The method of No. 5389352 synthetic cerium oxide that discloses of United States Patent (USP), it comprises that cerium (III) ion is mixed the back with alkaline matter add H
2O
2As oxygenant, make cerium be transformed into tetravalence by trivalent, the airtight hydrothermal treatment consists of following again the process High Temperature High Pressure is to obtain required ceria oxide powder.No. the 5026421st, United States Patent (USP) discloses a kind of method of synthetic cerium oxide, it comprise with cerium salt (IV) with after trivalent rare earth metals is mixed through steps such as precipitation, filtration, drying, calcination to obtain required ceria oxide powder.The TaiWan, China patent announcement discloses a kind of method of synthetic cerium oxide for No. 328068, it was included in the pH value at 5 to 10 o'clock, and (III) mixes with alkali with cerous nitrate, quickly heated up to about 70 to 100 ℃, and kept this Heating temperature 0.2 to 20 hour, to obtain the ceria oxide powder of 10 to 80 nanometers.No. the 365563rd, TaiWan, China patent announcement discloses a kind of method of synthetic cerium oxide, it comprise cerous carbonate pulverized with non-aqueous solvent after, again through 600 to 800 ℃ temperature calcination, to obtain required fine ceria oxide powder.
According to above-mentioned patent as can be known, preparing ceria oxide powder method commonly used has two kinds, and a kind of is precipitation calcination method, and another kind is the high pressure hydrothermal method.Yet precipitation calcination method needs steps such as filtration, drying and high-temperature calcination, because high-temperature calcination can cause particle aggregation, therefore the scratch problem is often arranged on semiconductor application.On the other hand, hydrothermal method is because need the equipment of High Temperature High Pressure, so the cost costliness.Moreover, use the abrasive of the powder manufacturing of these two kinds of methods acquisitions can produce sedimentary problem, make it on the unicircuit processed and applied, be subjected to serious restriction.
The contriver is through discovering extensively and profoundly, in silica gel, add contain cerium salt silicic acid with modified silica-gel, thereby make SiO in the silica gel
2Particulate and cerium salt and silicic acid carry out the multiple grinding agent that heterogeneous nucleation (heterogeneous nucleation) is obtained, and can address the above problem.This multiple grinding agent has cerium oxide simultaneously to the high material removal rate of dielectric layer material and the silica gel advantages such as not sedimentation that suspend.
Summary of the invention
A first aspect of the present invention provides a kind of multiple grinding agent, and this multiple grinding agent is to be made by silica gel, silicic acid and the cerium salt that dissolves in silicic acid.
A second aspect of the present invention provides a kind of composition that is used to prepare above-mentioned multiple grinding agent, and said composition comprises silica gel, silicic acid and dissolves in the cerium salt of silicic acid.
A third aspect of the present invention provides a kind of above-mentioned composition that uses to prepare the method for above-mentioned multiple grinding agent, this method comprises following step: at first silica gel is heated to more than 60 ℃, in silicic acid, add the cerium salt that dissolves in silicic acid on the other hand, the silicic acid that then this kind is contained cerium salt slowly is added in the above-mentioned silica gel, utilizes the SiO in the silica gel
2Particulate carries out heterogeneous nucleation as crystal seed with cerium salt and silicic acid, to obtain required multiple grinding agent.
The invention provides a kind of multiple grinding agent, it is by silica gel, silicic acid and to dissolve in the cerium salt of silicic acid obtained.This multiple grinding agent contains by silica gel, silicic acid and dissolves in the compound abrasive particle that silicic acid carries out the heterogeneous nucleation gained, can be used in the semiconductor machining, refers to the planarization process of semiconductor machining especially.
The present invention provides a kind of composition that is used to prepare above-mentioned multiple grinding agent again, the cerium salt that it comprises silica gel, silicic acid and dissolves in silicic acid.
Used silica gel of the present invention is general semiconductor machining dust head, and wherein the solid content of silicon-dioxide is below 40%, to be preferably below 30%.
The used silicic acid of the present invention is the general commercially available person of getting, and the concentration of this silicic acid and nucleogenesis have substantial connection, as desire to carry out heterogeneous nucleation, and silicic acid concentration is preferable to be maintained below the 10 weight %.
There is no particular restriction for the used cerium salt of the present invention kind, as long as can be dissolved in silicic acid, preferred embodiments is cerous nitrate ammonium salt ((NH
4)
2Ce (NO
3)
6) etc.This dissolves in the cerium salt of silicic acid, in composition total weight, is generally below the 5 weight %, is preferably 0.1 to 5 weight %.
The present invention provides a kind of above-mentioned composition that uses to prepare the method for above-mentioned multiple grinding agent on the other hand.The related step of the inventive method comprises and at first silica gel being heated to more than 60 ℃, adds the cerium salt that dissolves in silicic acid on the other hand in silicic acid, and the silicic acid that then this kind is contained cerium salt slowly is added in the above-mentioned silica gel, utilizes the SiO in the silica gel
2Particulate carries out heterogeneous nucleation as crystal seed with cerium salt and silicic acid, to obtain required multiple grinding agent.
In the aforesaid method, used temperature and nucleogenesis have substantial connection, as desire to carry out heterogeneous nucleation, and silica gel generally need be heated to 60 ℃ of temperature to the boiling point of silica gel, is preferably 70 ℃ of boiling points to silica gel, are more preferred from 70 ℃ to 150 ℃.
When not adding cerium salt as yet in the silicic acid, this silicic acid can optionally be handled through strong cation-exchanging resin well known to those skilled in the art in advance, to remove alkalimetal ion, for example sodium ion.Thereafter, the silicic acid that will contain cerium salt slowly is added in the silica gel, and interpolation speed is as long as keep the unlikely decline of silica gel temperature.
Utilize SiO
2Particulate carries out heterogeneous nucleation as crystal seed with cerium salt and silicic acid multinomial influence factor, essential through many-sided comprehensive consideration, wherein can the degree of supersaturation idea explain for one:
When degree of supersaturation much larger than 1 the time, since be Yin Wendu cross low or silicic acid concentration higher, silicic acid can be partial to homogeneous nucleation, when degree of supersaturation less than 1 the time, because Yin Wendu is too high or silicic acid concentration is on the low side, therefore silicic acid can tend to not nucleation, need be controlled under suitable service temperature and the silicic acid concentration, just can make silicic acid invest SiO as crystal seed
2On the particulate and carry out heterogeneous nucleation.This degree of supersaturation has substantial connection with the particle diameter and the surface potential of crystal seed again, yet understands more accurate to each other mechanism as yet at present.As mentioned above, as desire to keep silicic acid and silica gel carries out heterogeneous nucleation, silicic acid concentration need be kept below the 10 weight %, and silica gel need be heated to 60 ℃ of boiling points to silica gel.
Another factor that influences nucleogenesis is the acid-basicity that carries out the nucleation action system.As desire to keep silicic acid and cerium salt and silica gel and carry out heterogeneous nucleation smoothly, the nucleation system preferably is maintained at alkalescence.Itself is alkalescence silica gel, when adding contains the silicic acid of cerium salt, then may reduce the alkalescence of silica gel.Therefore, when the silicic acid that contains cerium salt adds in the silica gel, can optionally add alkaline matter in silica gel, to keep the stability of silica gel.There is no particular restriction for this alkaline matter kind, only otherwise participate in the essence reaction and can be adjusted to the karyonide system being alkalescence and getting final product, for example can use potassium hydroxide etc.
According to the present invention, the multiple grinding agent that makes through aforesaid method is alkalescence, and it can be optionally further handled and be acid through Zeo-karb, so that the range of application of this multiple grinding agent is more extensive.Zeo-karb used herein can be identical with the used Zeo-karb of above-mentioned processing silicic acid, but also can use other Zeo-karb well-known to those skilled in the art.
Following example will the invention will be further described, is not in order to limiting marrow of the present invention and category, and modification that any those skilled in the art can reach easily and change all are covered by in marrow of the present invention and the category.
ExampleGrinding test
Test is ground in the multiple grinding agent that utilizes each example to make, and condition is as follows: the A. instrument: IPEC/Westech 472B. condition: pressure: 5psi
Back pressure: 0psi
Temperature: 30 ℃
Grinding head rotating speed: 50rpm
Grinding stage rotating speed: 60rpm
Grinding pad pattern: Rodel IC1400
Slurry flow rate: 200 ml/min C. wafers: silicon oxide film, available from Silicon Valley Microelectronics, Inc., be with
The LPCVD technology is deposit 0.85 micron ± 5% silicon oxide on 6 inches Silicon Wafers
Film.
Before and after grinding, all measure the thickness of silicon oxide dielectric layer with elcometer (KLA-Tencor company, SM300 type machine).The measuring method of worn speed is to record dielectric layer thickness T with above-mentioned elcometer earlier before grinding
1After grinding 1 minute with the multiple grinding agent that is the slurries form in the example respectively, with Evergreen Model 10X type machine (solid-state instrument company (SolidState Equipment Corporation)) cleaning wafer, then dry up wafer, record dielectric layer thickness T with above-mentioned elcometer again
2With T
1Subtract T
2Be the worn speed of dielectric layer.SiO
2Concentration is calculated
The SiO of each example gained silicate solution
2Concentration can be utilized the density conversion of gained silicate solution.Suppose SiO
2Proportion be 2.2g/cm
3(this is the reference value of general document), the proportion of water is 1g/cm
3, with (1-X) g water and Xg SiO
2Uniform mixing then gets the SiO of X * 100%
2The aqueous solution makes that its density is D, can following formulate: D=1/[(1-X)/1+X/2.2] X=SiO
2(weight %)=1.8333333 * (D-1)/D * 100%
Above-mentioned formula is to have only SiO in the supposing the system
2With water.If only contain the additive of trace in the system, then calculate and the actual SiO that records by above-mentioned formula
2The error amount of concentration is at ± 5%, and therefore density commonly used is directly calculated SiO in the solution in the experiment
2Concentration.Above-mentioned formula is applicable in any system of the present invention.Example 1
60 weight part silica gel (the very luxuriant Evergreen trade number 33K of company) are added in 150 weight parts waters, make mixture heating up to 100 ℃, obtain to contain approximately SiO
2Particle solid content 8.6 weight % are as the silica gel of crystal seed.On the other hand, with 48 weight parts water glass (SiO
2Content 30%) with 270 weight parts waters dilutions and stir, use strong cation-exchanging resin (Amerlite-120) to carry out ion-exchange then, obtain about 300 weight part silicic acid, it is about 1.02 to measure the proportion of this silicic acid, is converted into SiO
2Concentration about 3.6%.In this silicate solution, add about 0.5 weight part (NH
4)
2Ce (NO
3)
6, gained solution slowly is added in the silica gel of above-mentioned heating with wriggling group Pu, make required multiple grinding agent.With the worn speed of above-mentioned grinding measurements determination, the result is as shown in table 1 with this multiple grinding agent.Example 2
In the identical mode of example 1, but, obtain to contain approximately SiO only with 100 weight part silica gel heating (not adding in the entry)
2The silica gel of particle solid content 30 weight %; (NH
4)
2Ce (NO
3)
6Consumption is 1.5 weight parts; And add about 1 weight part KOH in addition and be alkalescence to keep solution.With the worn speed of above-mentioned grinding measurements determination, the result is as shown in table 1 with the agent of gained multiple grinding.Example 3
With the same way as of example 2, but add in 50 weight parts waters 60 weight part silica gel and heating, obtain to contain approximately SiO
2The silica gel of particle solid content 16.3 weight %.With the worn speed of above-mentioned grinding measurements determination, the result is as shown in table 1 with the agent of gained multiple grinding.Example 4
With the same way as of example 3, but (NH
4)
2Ce (NO
3)
6Consumption is 0.5 weight part; And Zeo-karb (Amerlite-1 20) is passed through in the agent of gained multiple grinding again carry out ion-exchange,, the pH value of this multiple grinding agent is reduced to below 2.5, obtain final multiple grinding agent to remove the alkalimetal ion in the multiple grinding agent.With the worn speed of above-mentioned grinding measurements determination, the result is as shown in table 1 with the final multiple grinding agent of gained.Example 5
With the same way as of example 4, but (NH
4)
2Ce (NO
3)
6Consumption is 0.1 weight part; The KOH consumption is about 0.8 weight part.With the worn speed of above-mentioned grinding measurements determination, the result is as shown in table 1 with the final multiple grinding agent of gained.The abrasive characteristic of table 1 example gained abrasive
| Example number | SiO 2Worn speed (/min) |
| Example 1 | 310 |
| Example 2 | 863 |
| Example 3 | 428 |
| Example 4 | 367 |
| Example 5 | 351 |
| Blank * | 58 |
*: the silica gel that uses heating is as abrasive, with the worn speed of above-mentioned grinding measurements determination.
In the table 1, example 1 to 3 shows that the silica gel through silicic acid and cerium salt heterogeneous nucleation can make the multiple grinding agent increase by 500 above to the worn speed of wafer, after Zeo-karb was processed into acidity, worn speed did not have any change again for example 4 and 5 demonstration multiple grinding agent.
Claims (14)
1. multiple grinding agent, it is by silica gel, silicic acid and to dissolve in the cerium salt of silicic acid obtained.
2. abrasive as claimed in claim 1, wherein the concentration of this silicic acid is below the 10 weight %.
3. abrasive as claimed in claim 1, wherein this cerium salt that dissolves in silicic acid is cerous nitrate ammonium salt ((NH
4)
2Ce (NO
3)
6).
4. as the abrasive of claim 1, wherein this dissolves in the consumption of the cerium salt of silicic acid, in the gross weight of silica gel, silicic acid and cerium salt, is below the 5 weight %.
5. composition that is used to prepare the multiple grinding agent, the cerium salt that it comprises silica gel, silicic acid and dissolves in silicic acid.
6. as the composition of claim 5, wherein the concentration of this silicic acid is below the 10 weight %.
7. as the composition of claim 5, wherein this cerium salt that dissolves in silicic acid is cerous nitrate ammonium salt ((NH
4)
2Ce (NO
3)
6).
8. as the composition of claim 5, wherein this dissolves in the cerium salt of silicic acid, in composition total weight, is below the 5 weight %.
9. method for preparing the multiple grinding agent, it comprises silica gel is heated to more than 60 ℃ that the silicic acid that will contain cerium salt again is added in the silica gel, utilizes silica gel as crystal seed, carries out the heterogeneous nucleation effect with cerium salt and silicic acid, to obtain the multiple grinding agent.
10. as the method for claim 9, wherein the concentration of this silicic acid is below the 10 weight %.
11. as the method for claim 9, wherein this cerium salt is cerous nitrate ammonium salt ((NH
4)
2Ce (NO
3)
6).
12. as the method for claim 9, wherein the consumption of this cerium salt in the gross weight of silica gel, silicic acid and cerium salt, is below the 5 weight %.
13. as the method for claim 9, it can optionally add alkaline matter in silica gel when the silicic acid that contains cerium salt adds silica gel.
14. as the method for claim 9, wherein the agent of gained multiple grinding can be optionally handled and is acid through Zeo-karb.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01144315 CN1246413C (en) | 2001-12-14 | 2001-12-14 | Composite abradant and composition and preparation thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01144315 CN1246413C (en) | 2001-12-14 | 2001-12-14 | Composite abradant and composition and preparation thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1424373A true CN1424373A (en) | 2003-06-18 |
| CN1246413C CN1246413C (en) | 2006-03-22 |
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ID=4677472
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104694081A (en) * | 2015-03-23 | 2015-06-10 | 江苏天恒纳米科技股份有限公司 | Cobalt-containing doped silicon dioxide nano-composite abrasive grain sol and preparation method thereof, and polishing solution and preparation method thereof |
| CN104745146A (en) * | 2015-03-23 | 2015-07-01 | 江苏天恒纳米科技股份有限公司 | Nano-composite abrasive particle sol containing cerium-doped silicon dioxide, polishing agent and preparation method thereof |
| CN104877633A (en) * | 2015-05-26 | 2015-09-02 | 上海大学 | Magnesium-element-doped silicon dioxide sol compound abrasive grains, polishing solution and preparation method thereof |
| CN104946202A (en) * | 2015-05-26 | 2015-09-30 | 上海大学 | Iron-doped silica sol composite abrasive grain, and polishing solution composition and preparation method thereof |
| US11028288B2 (en) * | 2013-12-16 | 2021-06-08 | Rhodia Operations | Liquid suspension of cerium oxide particles |
-
2001
- 2001-12-14 CN CN 01144315 patent/CN1246413C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11028288B2 (en) * | 2013-12-16 | 2021-06-08 | Rhodia Operations | Liquid suspension of cerium oxide particles |
| CN104694081A (en) * | 2015-03-23 | 2015-06-10 | 江苏天恒纳米科技股份有限公司 | Cobalt-containing doped silicon dioxide nano-composite abrasive grain sol and preparation method thereof, and polishing solution and preparation method thereof |
| CN104745146A (en) * | 2015-03-23 | 2015-07-01 | 江苏天恒纳米科技股份有限公司 | Nano-composite abrasive particle sol containing cerium-doped silicon dioxide, polishing agent and preparation method thereof |
| CN104694081B (en) * | 2015-03-23 | 2019-09-20 | 江苏海迅实业集团股份有限公司 | The Compostie abrasive particles of silica nanometer containing cobalt doped colloidal sol, polishing fluid and preparation method thereof |
| CN104877633A (en) * | 2015-05-26 | 2015-09-02 | 上海大学 | Magnesium-element-doped silicon dioxide sol compound abrasive grains, polishing solution and preparation method thereof |
| CN104946202A (en) * | 2015-05-26 | 2015-09-30 | 上海大学 | Iron-doped silica sol composite abrasive grain, and polishing solution composition and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1246413C (en) | 2006-03-22 |
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