CN1412350A - Working platform for deposition process - Google Patents
Working platform for deposition process Download PDFInfo
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- CN1412350A CN1412350A CN 01136241 CN01136241A CN1412350A CN 1412350 A CN1412350 A CN 1412350A CN 01136241 CN01136241 CN 01136241 CN 01136241 A CN01136241 A CN 01136241A CN 1412350 A CN1412350 A CN 1412350A
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- reaction chamber
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Abstract
The working platform for making Ti/TiN film deposition process includes a physical vapor deposition (PVD) vacuum reactino chamber, at least a metal-organic chemical vapor deposition (MOCVD) vacuum reaction chamber, and a radio frequency (RF) treatment reaction chamber, in which the RF treatment reaction chamber can be substituted for plasma treatment process of MOCVD vacuum reactino chamber so as to increase producing capacity of working platform.
Description
Technical field
The present invention relates to a kind of workplatform of the Ti/TiN of carrying out depositing of thin film processing procedure, particularly a kind ofly include the plasma treatment reaction chamber, can be used for carrying out the workplatform of the deposition manufacture process of titanium nitride.
Background technology
Titanium (Titanium, Ti) with titanium nitride (Titanium nitride, TiN) be resistant to elevated temperatures metallic conductor, have splendid thermostability, physical strength and erosion resistance, therefore in manufacture of semiconductor, often play the part of the adhering layer or the role of diffused barrier layer.When especially being produced on the bilayer structure of Ti/TiN on the silicon substrate surface, can bring into play the oxonium ion that absorbs the silicon interface, with effective reduction contact resistance value (contactresistance).Generally speaking, the production method of TiN is to utilize physical vapor deposition (physical vapordeposiTion, PVD) method, form the TiN film with sputter on silicon substrate or contact hole sidewall, but for fear of the gradient coating performance difference of PVD method and easily form columnar structure, therefore (chemical vapor deposiTion, CVD) method replaces with chemical meteorology deposition mostly now.The CVD method that is used for carrying out the TiN thin film deposition can be divided into two kinds according to employed precursor (precursor), a kind ofly is to use inorganic precursor, as: TiCl
4/ NH
3, but corrosion impurity and particulate are formed in the film; Another kind be to use organic precursor as: TDMAT and TDEAT are commonly referred to as MOCVD (metal-organicCVD) method.
In the Ti/TiN depositing of thin film method, earlier with sputter process depositing Ti film, with M0CVD method depositing TiN thin film, need then the carbon in the organic precursors, hydrogen ion to be got rid of again, with thickness that reduces the TiN film and the resistance value that reduces the TiN film by plasma treatment.Please refer to Fig. 1, Fig. 1 shows the synoptic diagram of the workplatform 10 of known depositing Ti/TiN film.One workplatform 10 includes a plurality of wafers and holds/relief chamber's 12, one PVD vacuum reaction chambers 14, MOCVD vacuum reaction chamber 161, the 2nd MOCVD vacuum reaction chamber 162, one cooling rooms 18 and transfer system 20.In workplatform 10, carry out the mode of Ti/TiN thin film deposition process, be earlier a wafer (not shown) is loaded into wafer and holds/relief chamber 12 in, wafer can be transferred in the PVD vacuum reaction chamber 13 via transfer system 20 then, to carry out Ti depositing of thin film processing procedure.Thereafter wafer can be transmitted system 20 and is sent in the MOCVD vacuum reaction chamber 161, carrying out primary TiN thin film deposition process, and the TiN film is carried out the plasma treatment processing procedure first time.Then repeat above-mentioned action, wafer can be transmitted system 20 and be sent in the 2nd MOCVD vacuum reaction chamber 162, carrying out secondary TiN thin film deposition process, and the TiN film is carried out the plasma treatment processing procedure second time.At last then by transfer system 20 with wafer handling to cooling room 18, treat to transmit wafer again after the wafer cooling to hold/relief chamber 12 in.
Because wafer must carry out two TiN thin film deposition process and twice plasma treatment processing procedure in MOCVD vacuum reaction chamber 161,162, therefore all need dispose the transfer line of organic precursors, the transfer conduit of plasma reaction gas in first, second MOCVD vacuum reaction chamber 161,162, make the configuration of first, second MOCVD vacuum reaction chamber 161,162 become comparatively complicated and expensive.And, consuming time more of a specified duration for fear of the plasma treatment processing procedure, 161,162 finish deposition manufacture process and plasma treatment processing procedure in same MOCVD vacuum reaction chamber, can make the Production Time of Ti/TiN film prolong, and then influence the output of workplatform 10.
Summary of the invention
In view of this, the present invention then proposes a kind of workplatform of the Ti/TiN of carrying out depositing of thin film processing procedure, it is provided with wireless wave-wave (radio frequency frequently, RF) process chamber, can replace wafer at the indoor plasma treatment processing procedure that carries out of MOCVD vacuum reaction, with the Production Time of shortening Ti film/TiN film, and then the output of raising workplatform.And, can omit the equipment of relevant plasma treatment processing procedure in the first or the 2nd MOCVD vacuum reaction chamber, only replace its function with RF process chamber simple in structure, can make the configuration of first, second MOCVD vacuum reaction chamber become comparatively simple and cheap.
The workplatform of deposition manufacture process of the present invention includes: a physical vapor deposition (physical vapordeposiTion, PVD) vacuum reaction chamber; At least one metal organic chemical vapor deposition (metal-organicchemical vapor deposiTion, MOCVD) vacuum reaction chamber; One wireless wave-wave is (radiofrequency, RF) process chamber frequently.
Description of drawings
Fig. 1 shows the synoptic diagram of the workplatform of known depositing Ti/TiN film;
Fig. 2 A and 2B show the diagrammatic cross-section of Ti/TiN film;
Fig. 3 shows the synoptic diagram of the workplatform of the Ti/TiN of carrying out depositing of thin film processing procedure of the present invention.Nomenclature: 10 workplatformes; 12 wafers hold/relief chamber; The 14PVD vacuum reaction chamber; 161 the one MOCVD vacuum reaction chambers; 162 the 2nd MOCVD vacuum reaction chambers; 18 cooling rooms; 20 transfer systems.The 22 semiconductor-based ends; 24 gates; 26 sources/drain area; 28 interlayer dielectric layers; 30 contact holes; 31 openings; The 32Ti film; The 34TiN film; 36,361,362 metal carbonyl conducting layers; 40 workplatformes; 42 wafers hold/relief chamber; The 44PVD vacuum reaction chamber; 461 the one MOCVD vacuum reaction chambers; 402 the 2nd MOCVD vacuum reaction chambers; The 48RF process chamber; 52 cooling rooms; 50 transfer systems.
Embodiment
The present invention proposes a kind of workplatform of deposition manufacture process, and it is provided with the wireless wave-wave, and (radiofrequency, RF) process chamber can replace wafer at the indoor plasma treatment processing procedure that carries out of MOCVD vacuum reaction frequently.
Following most preferred embodiment is an example with the workplatform that carries out Ti/TiN depositing of thin film processing procedure, illustrates that Ti/TiN film of the present invention can be applied in the adhering layer or the making of diffused barrier layer.See also Fig. 2 A and 2B, it shows the diagrammatic cross-section of Ti/TiN film.Shown in Fig. 2 A, semiconductor substrate 22 includes a gate 24, one source/drain area 26, one interlayer dielectric layer 28, interlayer dielectric layer 28 is run through so that come out in the surface of source/drain area 26 in one contact hole 30, one Ti film 32 is deposited on the bottom and sidewall in contact hole 30, and a TiN film 34 is deposited on Ti film 32 surfaces, and a metal carbonyl conducting layer 36 fills up contact hole 30.Wherein, Ti/TiN film 32,34 is used as barrier layer, to reduce contact resistance value, also can be used as adhering layer, to increase the tack between metal carbonyl conducting layer 36 and the silicon substrate 22.In addition, shown in Fig. 2 B, include one first plain conductor 361 on the surface, the semiconductor-based ends 22, interlayer dielectric layer 28, plurality of openings (via) 31 runs through interlayer dielectric layer 28 so that first plain conductor 361 exposes to the open air out, Ti film 32 is deposited on the bottom and sidewall of opening 31, and TiN film 34 is deposited on Ti film 32 surfaces, and one second metal carbonyl conducting layer 362 fills up opening 31.
See also Fig. 3, it shows the synoptic diagram of the workplatform 40 of the deposition manufacture process that carries out Ti film 32/TiN film 34 of the present invention.In the deposition method of Ti film 32/TiN film 34, earlier with sputter process depositing Ti film 32, again with MOCVD method depositing TiN thin film 34, need then the carbon in the organic precursors, hydrogen ion to be got rid of, with the thickness that reduces TiN film 34, increase the density of TiN film 34 and reduce the resistance value of TiN film 34 by plasma treatment.The present invention proposes a workplatform 40 that is used for depositing Ti film 32/TiN film 34, include a plurality of wafers and hold/relief chamber 42, one PVD vacuum reaction chamber 44, one the one MOCVD vacuum reaction chamber 461, one the 2nd MOCVD vacuum reaction chamber 462, one RF process chamber, 48, one cooling rooms 52 and a transfer system 50.In workplatform 40, carry out the mode of deposition manufacture process, be earlier a wafer (not shown) is loaded into wafer and holds/relief chamber 42 in, wafer can be transferred in the PVD vacuum reaction chamber 44 via transfer system 50 then, to carry out the deposition manufacture process of Ti film 32.
Thereafter, wafer can be transmitted system 50 and be sent in the MOCVD vacuum reaction chamber 461, carrying out primary TiN film 34 deposition manufacture process, and TiN film 34 is carried out the plasma treatment processing procedure first time.Then repeat above-mentioned action, wafer can be transmitted system 50 and be sent in the 2nd MOCVD vacuum reaction chamber 462, carrying out secondary TiN film 34 deposition manufacture process, and TiN film 34 is carried out the plasma treatment processing procedure second time.At last then by transfer system 50 with wafer handling to cooling room 52, treat to transmit wafer again after the wafer cooling to hold/relief chamber 42 in.
It should be noted that in order effectively to promote the efficient of deposition manufacture process, can optionally use RF process chamber 48, to replace first time in first, second MOCVD vacuum reaction chamber 461,462, plasma treatment processing procedure for the second time.For instance, when wafer after a MOCVD vacuum reaction chamber 461 is finished primary TiN film 34 deposition manufacture process, wafer handling can be carried out the plasma treatment processing procedure first time to RF process chamber 48, and in a MOCVD vacuum reaction chamber 461, can carry out primary TiN film 34 deposition manufacture process simultaneously another wafer.Identical mode also can be applied in the 2nd MOCVD vacuum reaction chamber 462, to replace plasma treatment processing procedure for the second time.Use first, second MOCVD vacuum reaction chamber 461,462 and RF process chamber 48 as for how to arrange in pairs or groups, then can do suitable adjustment according to process requirement.
Compared to known techniques, plasma treatment processing procedure more of a specified duration consuming time can carry out in RF process chamber 48 in workplatform 40 provided by the present invention, therefore can effectively arrange wafer in first, second MOCVD vacuum reaction chamber 461,462, to carry out the first time, secondary TiN thin film deposition process, with the Production Time of shortening Ti film 32/TiN film 34, and then the output of raising workplatform 40.And, can omit the equipment of relevant plasma treatment processing procedure in the first or the 2nd MOCVD vacuum reaction chamber 461,462, only replace its function, can make the configuration of first, second MOCVD vacuum reaction chamber 461,462 become comparatively simple and cheap with RF process chamber simple in structure 48.
In addition, workplatform proposed by the invention also can be applicable on the Ta/TaN depositing of thin film processing procedure.Therefore, in PVD vacuum reaction chamber 44, can carry out Ta depositing of thin film processing procedure, in a MOCVD vacuum reaction chamber 461, primary TaN thin film deposition process can be carried out, and in the 2nd MOCVD vacuum reaction chamber 462, secondary TaN thin film deposition process can be carried out.
The above embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes the personage who has the knack of this skill can understand content of the present invention and is implementing according to this, when not limiting claim of the present invention with it, promptly the equalization of doing according to disclosed spirit generally changes or modifies, and must be encompassed in the claim scope of the present invention.
Claims (10)
1. the workplatform of a deposition manufacture process is characterized in that: include:
One physical vapor deposition (physical vapor deposiTion, PVD) vacuum reaction chamber;
At least one metal organic chemical vapor deposition (metal-organic chemical vapordeposiTion, MOCVD) vacuum reaction chamber;
One wireless wave-wave is (radio frequency, RF) process chamber frequently.
2. the workplatform of deposition manufacture process as claimed in claim 1, it is characterized in that: other includes:
One wafer holds/relief chamber, a wafer cooling room and a wafer transfer system.
3. the workplatform of deposition manufacture process as claimed in claim 1, it is characterized in that: this MOCVD vacuum reaction chamber is used for carrying out deposition manufacture process and plasma treatment processing procedure.
4. the workplatform of deposition manufacture process as claimed in claim 3, it is characterized in that: this RF process chamber can replace the plasma treatment processing procedure of this MOCVD vacuum reaction chamber.
5. the workplatform of deposition manufacture process as claimed in claim 1, it is characterized in that: this workplatform is used for carrying out Ti/TiN depositing of thin film processing procedure.
6. the workplatform of deposition manufacture process as claimed in claim 5, it is characterized in that: this PVD vacuum reaction chamber is used for carrying out Ti depositing of thin film processing procedure.
7. the workplatform of deposition manufacture process as claimed in claim 6, it is characterized in that: this MOCVD vacuum reaction chamber is used for carrying out TiN depositing of thin film processing procedure.
8. the workplatform of deposition manufacture process as claimed in claim 1, it is characterized in that: this workplatform is used for carrying out Ta/TaN depositing of thin film processing procedure.
9. the workplatform of deposition manufacture process as claimed in claim 8, it is characterized in that: this PVD vacuum reaction chamber is used for carrying out Ta depositing of thin film processing procedure.
10. the workplatform of deposition manufacture process as claimed in claim 9, it is characterized in that: this MOCVD vacuum reaction chamber is used for carrying out TaN depositing of thin film processing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011362413A CN1172022C (en) | 2001-10-11 | 2001-10-11 | Working platform for deposition process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011362413A CN1172022C (en) | 2001-10-11 | 2001-10-11 | Working platform for deposition process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1412350A true CN1412350A (en) | 2003-04-23 |
| CN1172022C CN1172022C (en) | 2004-10-20 |
Family
ID=4673519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011362413A Expired - Fee Related CN1172022C (en) | 2001-10-11 | 2001-10-11 | Working platform for deposition process |
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| Country | Link |
|---|---|
| CN (1) | CN1172022C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100348772C (en) * | 2003-12-25 | 2007-11-14 | 中芯国际集成电路制造(上海)有限公司 | Temperature control device for collimator in physical vapour deposition system |
| CN101563560B (en) * | 2006-12-19 | 2012-07-18 | 应用材料公司 | Non-contact process kit |
| CN102634776A (en) * | 2012-05-03 | 2012-08-15 | 徐明生 | Chemical vapor deposition device for continuously preparing two-dimensional nanofilm |
| CN101310036B (en) * | 2004-11-16 | 2014-08-06 | 应用材料公司 | Multi-layer high quality gate dielectric for low-temperature poly-silicon tfts |
| CN104862657A (en) * | 2015-04-17 | 2015-08-26 | 东北大学 | Titanium alloy surface nano Ti/TiN gradient film and preparation method thereof |
-
2001
- 2001-10-11 CN CNB011362413A patent/CN1172022C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100348772C (en) * | 2003-12-25 | 2007-11-14 | 中芯国际集成电路制造(上海)有限公司 | Temperature control device for collimator in physical vapour deposition system |
| CN101310036B (en) * | 2004-11-16 | 2014-08-06 | 应用材料公司 | Multi-layer high quality gate dielectric for low-temperature poly-silicon tfts |
| CN101563560B (en) * | 2006-12-19 | 2012-07-18 | 应用材料公司 | Non-contact process kit |
| CN102634776A (en) * | 2012-05-03 | 2012-08-15 | 徐明生 | Chemical vapor deposition device for continuously preparing two-dimensional nanofilm |
| CN104862657A (en) * | 2015-04-17 | 2015-08-26 | 东北大学 | Titanium alloy surface nano Ti/TiN gradient film and preparation method thereof |
| CN104862657B (en) * | 2015-04-17 | 2017-03-22 | 东北大学 | Titanium alloy surface nano Ti/TiN gradient film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1172022C (en) | 2004-10-20 |
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