CN1412271A - Fluorescent powder for GaN base light-emitting diode - Google Patents

Fluorescent powder for GaN base light-emitting diode Download PDF

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Publication number
CN1412271A
CN1412271A CN 02152035 CN02152035A CN1412271A CN 1412271 A CN1412271 A CN 1412271A CN 02152035 CN02152035 CN 02152035 CN 02152035 A CN02152035 A CN 02152035A CN 1412271 A CN1412271 A CN 1412271A
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emitting diode
fluorescent material
light
fluorescent powder
general formula
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CN1162511C (en
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苏锵
徐剑
张剑辉
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Sun Yat Sen University
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Sun Yat Sen University
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Abstract

The present invention relates to a fluorescent powder for preparing GaN base light-emitting diode (LED). Said fluorescent powder is a composite sulfide. Said invention provides its general formula, and its raw material composition and preparation method. Said fluorescent powder can be excited by 300nm-500 nm (specially 400nm-470 nm) light so as to give out 510 nm-650 nm light, and can be used for preparing green or white GaN base LED light-emitting diode with high luminosity.

Description

Fluorescent material that the GaN based light-emitting diode is used and preparation method thereof
Technical field
The present invention relates to fluorescent material that a kind of GaN based light-emitting diode uses and preparation method thereof.
Background technology
GaN based light-emitting diode LED (Light Emitting Diode) is a kind of novel luminescent device, it is little to have volume, long current consumption of life-span hangs down and does not need to use the advantages such as mercury of contaminate environment, can be widely used on the various lighting installations, comprise indoor lamp, traffic lights, stop-light, street lamp, automobile taillight, indicator, brake lamp, outdoor ultra-large type screen, display screen and billboard etc. replace the function of various bulb gradually.This novel green light source will become the lighting source of new generation of 21 century, to energy-saving and environmental protection, improve aspects such as people's quality of life and all be significant.The fluorescent material that can be used for GaN base LED at present is also few, as mixes yttrium aluminum garnet (YAG) the type fluorescent material of Ce, but because it is to utilize blue led and YAG type fluorescent material to make the white light LEDs of two primary colours, and energy conversion rate is lower, colour rendering index is not high yet.Existingly can be used for purple pipe (UV-LED) excited fluorescent powder, common as the high-pressure mercury lamp phosphor, but these fluorescent material can't satisfy the needs of UV-LED on excitation wavelength; And on working conditions, also to contain mercury different with temperature rather different when being applied to UV-LED because of it.
Summary of the invention
The purpose of this invention is to provide to excite at 300nm-500nm light and send down fluorescent material that GaN based light-emitting diode 510nm-650nm light, that be suitable for using in market uses and preparation method thereof, its method is simple, the energy conversion rate height.
Fluorescent material provided by the invention is a kind of complex sulfide, and general formula is (A xR 1-xS) (B 2S 3) yOr (A xR 1-xS) (B 2S 3) Y-z(C 2S 3) zWherein A represents the combination (as Mg, Sr, Ca, Ba, Cd, Pd, Hg and Zn) of one or more divalent-metal ions; B represents at least a or multiple aluminium that is selected from, the element of gallium or indium; On behalf of one or more, C be selected from the element of Gd, Y and La; R represents the combination (as Mn, Cu, Ag, Sm, Tb, Tm, Yb, Pr, Ce, Dy, Ho and Er) of Eu or Eu and other activator ion; 0.001≤x≤1,1≤y≤5,0.01≤z≤1.
The method that the present invention relates to prepare this fluorescent material system is as follows:
1) by the mole proportioning of general formula expression requirement, compound or salt to contain A contain B metal or compound or salt, and the compound or the salt that contain C are raw material, and the compound or the salt that contain R are raw material, and by the proportioning weighing of general formula requirement, it is even to mix porphyrize.
2) mixture that preceding step is obtained adds hydrogen sulfide or carbon adds in the atmosphere of sulphur at hydrogen sulfide, dithiocarbonic anhydride, hydrogen, between temperature 800-1200 ℃, forms through the one or many calcining.
3) promptly get product behind the sintered compact crushing screening that preceding step is obtained.
Adopt the inventive method synthetic fluorescent material to send 510nm-650nm light under 300nm-500nm light excites, the GaN based light-emitting diode that is suitable for using in market uses, and can be complementary with blue-ray LED, prepares two novel primary colours white light LEDs; Also can be complementary, partly be used for the preparation of three primary colours white light LEDs, energy conversion rate height as green emitting phosphor with UV-LED; Its synthetic method is simple and convenient, has filled up the blank that existing market needs.
Description of drawings
Fig. 1 is embodiment 1[(Sr 0.99Eu 0.01) S] (Ga 2S 3) the X ray spectrogram.
Fig. 2 is embodiment 1[(Sr 0.99Eu 0.01) S] (Ga 2S 3) emmission spectrum figure (400nm excites).
Fig. 3 is embodiment 3[(Ca 0.9Eu 0.1) S] (Ga 2S 3) 1.25Emmission spectrum figure (470nm excites).
Fig. 4 is embodiment 5[(Ca 0.96Eu 0.04) S] (Ga 2S 3) 0.6(Y 2S 3) 0.4Emmission spectrum figure (470nm excites).
Embodiment
Embodiment one:
[(Sr 0.99Eu 0.01) S] (Ga 2S 3) fluorescent material synthetic:
SrCO 3(analytical pure) 4.3846 grams;
Ga 2O 3(4N) 5.6232 grams;
Eu 2O 3(4N) 0.0528 gram.
With above-mentioned material in agate mortar, grind be mixed after, in the corundum crucible of packing into, at H 2800 ℃ of following calcinations in the S atmosphere, calcination time is no less than 1 hour, and take out the cooling back, and crushing screening obtains the greeny powder of outward appearance, sends green light at 250nm under 500nm light excites.Its X-ray spectrogram is seen Fig. 1, and emmission spectrum figure sees Fig. 2.
Embodiment two:
[(Sr 0.96Eu 0.02Tm 0.02) S] (Ga 2S 3) fluorescent material synthetic:
SrCO 3(analytical pure) 1.4172 grams;
Ga 2O 3(4N) 1.8744 grams;
Eu 2O 3(4N) 0.0352 gram;
Tm 2O 3(4N) 0.0386 gram.
With above-mentioned material in agate mortar, grind be mixed after, in the corundum crucible of packing into, at H 2800 ℃ of following calcinations in the S atmosphere, calcination time is no less than 1 hour,, take out the cooling back, and crushing screening obtains the greeny powder of outward appearance, sends green light at 250nm under 500nm light excites.
Embodiment three:
[(Ca 0.9Eu 0.1) S] (Ga 2S 3) 1.25Synthesizing of fluorescent material:
CaCO 3(analytical pure) 3.6024 grams;
Ga 2O 3(4N) 9.3728 grams;
Eu 2O 3(4N) 0.7038 gram.
With above-mentioned material in agate mortar, grind be mixed after, in the corundum crucible of packing into, at H 2850 ℃ of following calcinations in the S atmosphere, calcination time is no less than 1 hour,, take out the cooling back, and crushing screening obtains outward appearance and is the xanchromatic powder, sends sodium yellow at 250nm under 520nm light excites.Its emmission spectrum figure sees Fig. 3.
Embodiment four:
[(Sr 0.45Ca 0.45Eu 0.1) S] [(Al 0.2Ga 1.8) S 3] 2Synthesizing of fluorescent material:
SrCO 3(analytical pure) 0.6643 gram;
CaCO 3(analytical pure) 0.4503 gram;
Ga 2O 3(4N) 3.3739 grams;
Al (OH) 3(4N) 0.3120 gram;
Eu 2O 3(4N) 0.1760 gram;
S (analytical pure) 2.56 grams.
With above-mentioned material in agate mortar, grind be mixed after, pack in the little corundum crucible, again monkey is put into the big crucible of carbon-point, cover the corundum lid, 900 ℃ of following calcinations in retort furnace, calcination time is no less than 1 hour, take out the cooling back, crushing screening obtains outward appearance and is yellowish green powder, excites luminous down to 500nm light at 250nm.
Embodiment five:
[(Ca 0.96Eu 0.04) S] (Ga 2S 3) 0.6(Y 2S 3) 0.4Synthesizing of fluorescent material:
CaCO 3(analytical pure) 4.803 grams;
Ga 2O 3(4N) 5.6232 grams;
Y 2O 3(4N) 4.5162 grams;
Eu 2O 3(4N) 0.3519 gram.
With above-mentioned material in agate mortar, grind be mixed after, in the quartz boat of packing into, at H 2950 ℃ of following calcinations in the S atmosphere, calcination time is no less than 1 hour,, take out the cooling back, and crushing screening obtains outward appearance and is the xanchromatic powder, and luminous under 250nm excites to 520nm light, emmission spectrum is seen Fig. 4.
Embodiment six:
[(Ca 0.96Eu 0.04) S] (Ga 2S 3) 1.5[(Y 1.4Gd 0.6) S 3]] 0.5Synthesizing of fluorescent material:
CaCO 3(analytical pure) 0.9607 gram;
Ga 2O 3(4N) 2.8116 grams;
Y 2O 3(4N) 0.7903 gram;
Gd 2O 3(4N) 0.5438 gram;
Eu 2O 3(4N) 0.0704 gram.
With above-mentioned material in agate mortar, grind be mixed after, in the quartz boat of packing into, at H 2900 ℃ of following calcinations in the S atmosphere, calcination time is no less than 1 hour, and take out the cooling back, and crushing screening obtains outward appearance and is the xanchromatic powder, excites luminous down to 520nm light at 250nm.

Claims (3)

1. fluorescent material that the GaN based light-emitting diode is used, the general formula that it is characterized in that this fluorescent material is (A xR 1-xS) (B 2S 3) yOr (A xR 1-xS) (B 2S 3) Y-z(C 2S 3) z, wherein A is the combination of one or more divalent-metal ions, B is at least a or multiple aluminium that is selected from, the element of gallium or indium, C is selected from the element of Gd, Y and La for one or more, and R is the combination of Eu or Eu and other activator ion, 0.001≤x≤1,1≤y≤5,0.01≤z≤1.
2. GaN based light-emitting diode fluorescent material as claimed in claim 1 is characterized in that the R in the general formula of this fluorescent material is Eu.
3. method for preparing the fluorescent material that GaN based light-emitting diode as claimed in claim 1 uses, it is characterized in that expressing the mole proportioning of requirement by general formula, use simple substance or the compound or the salt of expressed element, through batching, behind the porphyrize mixing, add hydrogen sulfide or carbon adds in the atmosphere of sulphur at hydrogen sulfide, dithiocarbonic anhydride, hydrogen, between temperature 800-1200 ℃, form through the one or many calcining.
CNB021520356A 2002-11-25 2002-11-25 Fluorescent powder for GaN base light-emitting diode Expired - Fee Related CN1162511C (en)

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CN1162511C CN1162511C (en) 2004-08-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105219381A (en) * 2015-10-26 2016-01-06 陕西光电科技有限公司 A kind of rear-earth-doped thiogallate phosphor material powder and preparation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105219381A (en) * 2015-10-26 2016-01-06 陕西光电科技有限公司 A kind of rear-earth-doped thiogallate phosphor material powder and preparation method

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Granted publication date: 20040818