CN1401611A - Bismuth sodium titanate series film material and preparing process thereof - Google Patents
Bismuth sodium titanate series film material and preparing process thereof Download PDFInfo
- Publication number
- CN1401611A CN1401611A CN 02135524 CN02135524A CN1401611A CN 1401611 A CN1401611 A CN 1401611A CN 02135524 CN02135524 CN 02135524 CN 02135524 A CN02135524 A CN 02135524A CN 1401611 A CN1401611 A CN 1401611A
- Authority
- CN
- China
- Prior art keywords
- bismuth
- solution
- sodium titanate
- temperature
- acetate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
A bismuth sodium titanate thin film series has a formula of (1-X)(Bi0.5Na0.5)TiO3+XMTiO3, where x=0-0.6 and M is chosen from Ba, Pb, Sr and Ca, and is prepared by metal-organic solution depositing method. Its advantages are proper electric conductivity in ferroelectric region, wide sinter temp range, and high storage and thermoelectric properties.
Description
(1) technical field
The present invention relates to a kind of bismuth sodium titanate series film material and preparation method thereof, belong to the thin-film material technical field.
(2) background technology
The molecular formula of bismuth-sodium titanate material is (Bi
1/2Na
1/2) TiO
3It is the perovskite typed ferroelectrics of nineteen sixty by people such as Smolensky invention.It has following advantage: strong (the residual polarization Pr=38 μ C/cm of ferroelectricity
2); Big (the k of piezo-electric modulus
t, k
33, about 50%); DIELECTRIC CONSTANT r is 240～340; Pyroelectric property and lead titanate are suitable with lead titanate-zirconate PZT; Good (its frequency constant N ρ=3200Hzm), thereby help making surface acoustic wave device of acoustical behavior; It also has the ferroelectric characteristic of relaxation property, and firing temperature belongs to intermediate sintering temperature.Have following weakness as the stupalith bismuth-sodium titanate: coercive electric field higher (73kv/cm) is difficult to polarization; This pottery is higher in the specific conductivity of ferroelectric phase region; This series ceramic sintering range is narrow; Na
2O easily absorbs water.
People such as the scholar K.Sakata of Tokyo college of science and T.Takenaka are devoted for years to and have successfully solved the bismuth-sodium titanate pottery in the study on the modification of bismuth-sodium titanate pottery and be difficult to the polar problem, and have obtained the non-plumbum ferroelectric piezoelectric ceramics of better performances.Specifically be divided into following four classes:
(1) (1-X) BNT+X (Sr
aPb
bCa
c) TiO
3(a+b+c=1); (2) (1-X) ENT+XBaTiO
3(3) (1-X) BNT+XMNbO
3(M is Na, K); (4) (1-X) BNT+ (1/2) * (Bi
2O
3.Sc
2O
3).
People such as scientist in Poland K.ROLEDERD in 1989 adopt flux method to prepare and are of a size of 0.5 * 0.5 * 0.2mm
3The bismuth-sodium titanate monocrystalline, determined the structure and the transformation temperature of bismuth-sodium titanate substantially.
So far, do not see the relevant report of any bismuth sodium titanate series film in the world as yet.
(3) summary of the invention
In order to reduce environmental pollution, overcome of the Lead contamination of the present Pb-based lanthanumdoped zirconate titanates series film material that is using to environment, reduce plumbous content in thin-film material to greatest extent, in order to improve the specific inductivity of this type of thin-film material, reduce dielectric loss, reduce dielectricity with variation of temperature, improve the anti-disruptive strength of this type of thin-film material.The present invention has prepared a kind of bismuth sodium titanate series film material, and has provided the preparation method.
The present invention is realized by following technical scheme:
The prepared bismuth sodium titanate series film material of the present invention is made up of titanium, bismuth, sodium, barium, lead, strontium, calcium and oxonium ion, has the thin-film material of perovskite structure.Their molecular formula is (1-X) (Bi
1/2Na
1/2) TiO
3+ XMTiO
3, wherein the X value is 0～0.6; M is any one in barium, lead, strontium or the calcium constituent.
The technological process of preparation bismuth sodium titanate series film material is as follows: (1) configuration solution in early stage, and early stage, solution can be a kind of of following situation:
1. pure bismuth-sodium titanate (Bi
1/2Na
1/2) TiO
3Solution, i.e. X=0
Stoichiometric ratio by molecular formula takes by weighing Bismuth trinitrate or bismuth acetate and SODIUMNITRATE or sodium-acetate raw material, and is former with what weigh up
Insert mill respectively or shredder grinds to form fine powder, the SODIUMNITRATE that grinds to form fine powder is dissolved in ethylene glycol monomethyl ether, and
Constantly heating and stirring, temperature is controlled at 40 ℃～200 ℃, makes 1# solution; Bismuth trinitrate is dissolved in the Glacial acetic acid,
And constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 2# solution;
2. adulterated bismuth sodium titanate series (1-X) (Bi
1/2Na
1/2) TiO
3+ XMTiO
3Solution i.e. 0＜X≤0.6
Stoichiometric ratio by molecular formula takes by weighing bismuth acetate or Bismuth trinitrate, sodium-acetate or SODIUMNITRATE and acetic acid M or nitric acid M, M
Be wherein any one of barium, lead, strontium or calcium, the sodium-acetate that weighs up or SODIUMNITRATE and acetic acid M or nitric acid M is former
Material inserts mill respectively or shredder grinds to form fine powder, and the various raw materials that grind to form fine powder are dissolved in the ethylene glycol first
Ether, and constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 1# solution; Bismuth acetate is dissolved in ice
In the acetic acid, and constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 2# solution; (2) select a kind of of solution in early stage, pour 1# solution into 2# solution, and lasting heated and stirred, heating and temperature control exists
40 ℃～200 ℃, mix until solution; Then mixing solutions is reduced to room temperature, added surely to solution again
The methyl ethyl diketone of tailor-made usefulness; (3) are accurately measured metatitanic acid four fourth fat by the stoichiometric ratio of molecular formula and are joined in the solution in early stage spent glycol methyl ether then then
Solution dilution is arrived needed volumetric molar concentration; (4) allow the early stage solution be the strainer of 0.2 μ m, filter out impurities and suspended matter, obtain bismuth-sodium titanate system by the aperture
The precursor solution of row film; (5) select the substrate of the silicon chip of process cleaning as film then; (6) with the precursor solution of sol evenning machine to the bismuth sodium titanate series film then, even glue 4 under 200～600 rev/mins speed～
10 seconds, even glue was 20～60 seconds under 2000～6000 rev/mins speed, and the wet film of gained is carried out in air
Thermal treatment rises to 300 ℃～600 ℃ with 10 ℃～20 ℃/minute temperature rise rates, and keeps 10～40 minutes,
Reduce to room temperature then; Repeat this step, can obtain the bismuth sodium titanate series film of 20～1000 nanometer thickness; (7) again the bismuth sodium titanate series film is carried out anneal, temperature is controlled at 400 ℃～800 ℃, and the time is 20～180
Minute, can obtain the more stable polycrystalline of performance or the orientation crystalline state the bismuth sodium titanate series film.
The used silicon chip type of substrate material is P type or N type; Silicon chip is oriented to (111) or (100).
The present invention adopts the sedimentary method of metal organosol to prepare the bismuth sodium titanate series ferroelectric membranc, has a series of critical natures such as ferroelectric, pyroelectricity and photoelectricity.Adopt the bismuth sodium titanate series film can prepare film capacitor at present, it has following advantage than ordinary capacitor: (1) specific inductivity is big, and (2) dielectric loss is little, and (3) dielectricity varies with temperature little, (4) height of anti-the disruptive strength.The bismuth sodium titanate series film can also be used to preparing ferroelectric random memory (non-volatile memory FERAM and FEFET), and be characterized in: (1) coercive electric field is low, and (2) dielectric loss is little, (3) resistivity height.The bismuth sodium titanate series film has overcome also that the bismuth-sodium titanate pottery is higher in the specific conductivity of ferroelectric phase region, sintering range is narrow and easy weakness such as suction.The market outlook of estimating bismuth sodium titanate series film maximum can be aspect the ferroelectric smart card of manufacturing.Also can be widely used in numerous areas such as microelectronics, photoelectron, computer, transmitter and aeronautical and space technology as a kind of new thin-film material bismuth sodium titanate series film material.It is the most promising newcomer in the ferroelectric membranc extended familys.
(4) embodiment
Embodiment 1.
Bismuth-sodium titanate (the Bi of one liter of 0.5mol concentration of configuration
1/2Na
1/2) TiO
3Solution selects X=0 in the molecular formula, concrete preparation process is as follows:
(1) stoichiometric ratio by molecular formula accurately takes by weighing analytically pure raw material: Bismuth trinitrate 49.00 grams, SODIUMNITRATE 8.58
Gram is inserted mill or shredder respectively, grinds to form fine powder; The SODIUMNITRATE that grinds to form fine powder is dissolved in 300ml
Ethylene glycol monomethyl ether, and constantly heat and stir, Heating temperature is 100 ℃; Make 1# solution; Bismuth trinitrate is molten
In the 600ml Glacial acetic acid, and constantly heat and stir, temperature is 100 ℃, makes 2# solution;
(2) pour 1# solution into 2# solution, and lasting heated and stirred, heating and temperature control is at 100 ℃, until molten
Liquid mixes; Then mixing solutions is reduced to room temperature, added the methyl ethyl diketone of stabilization again to solution
25ml; Then
(3) accurately measuring metatitanic acid four fourth fat 69ml by the stoichiometric ratio of molecular formula joins in the solution in early stage, then
The spent glycol methyl ether arrives 1000ml with solution dilution;
(4) allow the early stage solution be the strainer of 0.2 μ m by the aperture, filter out impurities and suspended matter, obtain titanium
The precursor solution of acid bismuth sodium series thin film; Then;
(5) the P type silicon chip of selecting process to clean, silicon chip is oriented to (111), as the substrate of film; Then
(6) with the precursor solution of sol evenning machine to the bismuth sodium titanate series film, even glue 6 under 500 rev/mins speed
Second, even glue is 30 seconds under 4500 rev/mins speed, the wet film of gained is heat-treated in air, with 15 ℃/
The temperature rise rate that divides rises to 500 ℃, and keeps 15 minutes, reduces to room temperature then; This step repeats 4 times, can
To obtain the bismuth-sodium titanate film of 220 nanometer thickness;
(7) again the bismuth sodium titanate series film is carried out anneal, temperature is controlled at 650 ℃, and the time is 150 minutes,
Can obtain the bismuth sodium titanate series film of more stable polycrystalline of performance or orientation crystalline state.
Embodiment 2.
The barium sodium bismuth titanate Ba of one liter of 0.5mol concentration of configuration
0.1(Bi
1/2Na
1/2)
0.9TiO
3Solution selects X=0.1 in the molecular formula; M=Ba, concrete preparation process is as follows:
(1) stoichiometric ratio by molecular formula accurately takes by weighing analytically pure raw material: bismuth acetate 35.10 grams, sodium-acetate 7.46
Gram, barium acetate 5.52 grams are inserted mill or shredder respectively, grind to form fine powder; Fine powder will be ground to form
Sodium-acetate and barium acetate are dissolved in the 300ml ethylene glycol monomethyl ether, and constantly heat and stir, and Heating temperature is
100 ℃; Make 1# solution; Bismuth trinitrate is dissolved in the 600ml Glacial acetic acid, and constantly heats and stir temperature
Degree is 100 ℃, makes 2# solution;
(2)～(7) processing step is identical with (2)～(7) processing step of embodiment 1.
Embodiment 3.
The plumbous Pb of the bismuth-sodium titanate of one liter of 0.5mol concentration of configuration
0.2(Bi
1/2Na
1/2)
0.8TiO
3Solution selects X=0.1 in the molecular formula; M=Pb, concrete preparation process is as follows:
(1) stoichiometric ratio by molecular formula accurately takes by weighing analytically pure raw material: Bismuth trinitrate 39.20 grams, SODIUMNITRATE 6.87
Gram, plumbic acetate 15.33 grams are inserted mill or shredder respectively, grind to form fine powder; The nitre of fine powder will be ground to form
Acid sodium and plumbic acetate are dissolved in the 600ml ethylene glycol monomethyl ether, and constantly heat and stir, and Heating temperature is 100 ℃; System
Become 1# solution; Bismuth trinitrate is dissolved in the 300ml Glacial acetic acid, and constantly heats and stir, temperature is 100 ℃,
Make 2# solution;
(2)～(7) processing step is identical with (2)～(7) processing step of embodiment 1.
Embodiment 4.
The bismuth-sodium titanate calcium Ca of one liter of 0.5mol concentration of configuration
0.1(Bi
1/2Na
1/2)
0.9TiO
3, select X=0.1 in the molecular formula; M=Ca, concrete preparation process is as follows:
(1) stoichiometric ratio by molecular formula accurately takes by weighing analytically pure raw material: bismuth acetate 35.10 grams, sodium-acetate 7.46
Gram, calcium acetate 3.20 grams are inserted mill or shredder respectively, grind to form fine powder; The vinegar of fine powder will be ground to form
Acid bismuth and sodium-acetate are dissolved in the 300ml ethylene glycol monomethyl ether, and constantly heat and stir, and Heating temperature is 100 ℃; System
Become 1# solution; Bismuth trinitrate is dissolved in the 600ml Glacial acetic acid, and constantly heats and stir, temperature is 100 ℃,
Make 2# solution;
(2)～(7) processing step is identical with (2)～(7) processing step of embodiment 1.
Embodiment 5.
The bismuth-sodium titanate strontium Sr of one liter of 0.5mol concentration of configuration
0.1(Bi
1/2Na
1/2)
0.9TiO
3Solution selects X=0.1 in the molecular formula; M=Sr, concrete preparation process is as follows:
(1) stoichiometric ratio by molecular formula accurately takes by weighing analytically pure raw material: bismuth acetate 35.10 grams, sodium-acetate 7.46
Gram, strontium acetate 4.16 grams are inserted mill or shredder respectively, grind to form fine powder; The vinegar of fine powder will be ground to form
Acid bismuth and sodium-acetate are dissolved in the 300ml ethylene glycol monomethyl ether, and constantly heat and stir, and Heating temperature is 100 ℃; System
Become 1# solution; Bismuth trinitrate is dissolved in the 600ml Glacial acetic acid, and constantly heats and stir, temperature is 100 ℃,
Make 2# solution;
(2)～(7) processing step is identical with (2)～(7) processing step of embodiment 1.
Claims (3)
1. bismuth sodium titanate series film material is characterized in that it is made up of titanium, bismuth, sodium, barium, lead, strontium, calcium and oxonium ion, and its ingredient formula is (1-X) (Bi
1/2Na
1/2) TiO
3+ XMTiO
3, wherein the value of X is 0～0.6; M is any one in barium, lead, strontium or the calcium constituent.
2. preparation method who prepares bismuth sodium titanate series film material as claimed in claim 1 is characterized in that preparation process is as follows: (1) configuration solution in early stage, and early stage, solution can be a kind of of following situation:
1. pure bismuth-sodium titanate (Bi
1/2Na
1/2) TiO
3Solution, i.e. X=0
Stoichiometric ratio by molecular formula takes by weighing Bismuth trinitrate or bismuth acetate and SODIUMNITRATE or sodium-acetate raw material, with the raw material that weighs up
Insert mill respectively or shredder grinds to form fine powder, the SODIUMNITRATE that grinds to form fine powder is dissolved in ethylene glycol monomethyl ether, and
Constantly heating and stirring, temperature is controlled at 40 ℃～200 ℃, makes 1# solution; Bismuth trinitrate is dissolved in the Glacial acetic acid,
And constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 2# solution;
2. adulterated bismuth sodium titanate series (1-X) (Bi
1/2Na
1/2) TiO
3+ XMTiO
3Solution i.e. 0＜X≤0.6
Stoichiometric ratio by molecular formula takes by weighing bismuth acetate or Bismuth trinitrate, sodium-acetate or SODIUMNITRATE and acetic acid M or nitric acid M, M
Be wherein any one of barium, lead, strontium or calcium, the sodium-acetate that weighs up or SODIUMNITRATE and acetic acid M or nitric acid M is former
Material inserts mill respectively or shredder grinds to form fine powder, and the various raw materials that grind to form fine powder are dissolved in ethylene glycol monomethyl ether,
And constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 1# solution; Bismuth acetate is dissolved in Glacial acetic acid
In, and constantly heat and stir, temperature is controlled at 40 ℃～200 ℃, makes 2# solution; (2) select a kind of of solution in early stage, pour 1# solution into 2# solution, and lasting heated and stirred, heating and temperature control exists
40 ℃～200 ℃, mix until solution; Then mixing solutions is reduced to room temperature, added surely to solution again
The methyl ethyl diketone of tailor-made usefulness; (3) are accurately measured metatitanic acid four fourth fat by the stoichiometric ratio of molecular formula and are joined in the solution in early stage spent glycol methyl ether then then
Solution dilution is arrived needed volumetric molar concentration; (4) allow the early stage solution be the strainer of 0.2 μ m, filter out impurities and suspended matter, obtain bismuth-sodium titanate system by the aperture
The precursor solution of row film; (5) select the substrate of the silicon chip of process cleaning as film then; (6) with the precursor solution of sol evenning machine to the bismuth sodium titanate series film then, even glue 4 under 200～600 rev/mins speed～
10 seconds, even glue was 20～60 seconds under 2000～6000 rev/mins speed, and the wet film of gained is carried out in air
Thermal treatment rises to 300 ℃～600 ℃ with 10 ℃～20 ℃/minute temperature rise rates, and keeps 10～40 minutes,
Reduce to room temperature then; Repeat this step, can obtain the bismuth sodium titanate series film of 20～1000 nanometer thickness; (7) again the bismuth sodium titanate series film is carried out anneal, temperature is controlled at 400 ℃～800 ℃, and the time is 20～180
Minute, can obtain the more stable polycrystalline of performance or the orientation crystalline state the bismuth sodium titanate series film.
3. the preparation method of bismuth sodium titanate series film material according to claim 2 is characterized in that the silicon chip type is P type or N type; Silicon chip is oriented to (111) or (100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02135524XA CN1176044C (en) | 2002-09-11 | 2002-09-11 | Bismuth sodium titanate series film material and preparing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02135524XA CN1176044C (en) | 2002-09-11 | 2002-09-11 | Bismuth sodium titanate series film material and preparing process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1401611A true CN1401611A (en) | 2003-03-12 |
| CN1176044C CN1176044C (en) | 2004-11-17 |
Family
ID=4748233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB02135524XA Expired - Fee Related CN1176044C (en) | 2002-09-11 | 2002-09-11 | Bismuth sodium titanate series film material and preparing process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1176044C (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100341590C (en) * | 2004-10-15 | 2007-10-10 | 洪克森 | Material for rehabilitation therapy capable of emitting biological photon wave spectrum |
| CN101215172B (en) * | 2008-01-09 | 2010-06-09 | 华中科技大学 | Method for preparing bismuth sodium titanate base leadless piezoelectricity thick film |
| CN103043719A (en) * | 2012-11-15 | 2013-04-17 | 华中科技大学 | Method for preparing sodium bismuth titanate oriented film and product thereof |
| CN103708739A (en) * | 2013-07-02 | 2014-04-09 | 济南大学 | Zinc-doped sodium bismuth titanate film and low temperature preparation method thereof |
| CN104072129A (en) * | 2014-04-18 | 2014-10-01 | 济南大学 | B-position equivalent zirconium doped sodium bismuth titanate film |
| CN104103755A (en) * | 2014-07-14 | 2014-10-15 | 上海交通大学 | Sodium bismuth titanate thin film system based resistance random access memory and preparation method thereof |
| CN107365152A (en) * | 2017-09-04 | 2017-11-21 | 苏州云舒新材料科技有限公司 | A kind of preparation method of the sub- ceramic membrane material of pyroelectricity |
| CN110451954A (en) * | 2019-07-23 | 2019-11-15 | 同济大学 | The low lead piezoelectric membrane of bismuth-sodium titanate base and preparation method with high inverse piezoelectric modulus |
| CN112341191A (en) * | 2020-10-26 | 2021-02-09 | 同济大学 | Lead-free ceramic dielectric with high energy storage density and high energy storage efficiency and preparation method thereof |
| CN115677342A (en) * | 2021-07-28 | 2023-02-03 | 中国科学院上海硅酸盐研究所 | Preparation method of perovskite structure BNT/LNO heteroepitaxial film |
-
2002
- 2002-09-11 CN CNB02135524XA patent/CN1176044C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100341590C (en) * | 2004-10-15 | 2007-10-10 | 洪克森 | Material for rehabilitation therapy capable of emitting biological photon wave spectrum |
| CN101215172B (en) * | 2008-01-09 | 2010-06-09 | 华中科技大学 | Method for preparing bismuth sodium titanate base leadless piezoelectricity thick film |
| CN103043719A (en) * | 2012-11-15 | 2013-04-17 | 华中科技大学 | Method for preparing sodium bismuth titanate oriented film and product thereof |
| CN103043719B (en) * | 2012-11-15 | 2014-05-07 | 华中科技大学 | Method for preparing sodium bismuth titanate oriented film and product thereof |
| CN103708739A (en) * | 2013-07-02 | 2014-04-09 | 济南大学 | Zinc-doped sodium bismuth titanate film and low temperature preparation method thereof |
| CN104072129A (en) * | 2014-04-18 | 2014-10-01 | 济南大学 | B-position equivalent zirconium doped sodium bismuth titanate film |
| CN104103755A (en) * | 2014-07-14 | 2014-10-15 | 上海交通大学 | Sodium bismuth titanate thin film system based resistance random access memory and preparation method thereof |
| CN107365152A (en) * | 2017-09-04 | 2017-11-21 | 苏州云舒新材料科技有限公司 | A kind of preparation method of the sub- ceramic membrane material of pyroelectricity |
| CN110451954A (en) * | 2019-07-23 | 2019-11-15 | 同济大学 | The low lead piezoelectric membrane of bismuth-sodium titanate base and preparation method with high inverse piezoelectric modulus |
| CN110451954B (en) * | 2019-07-23 | 2021-12-07 | 同济大学 | Sodium bismuth titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and preparation method thereof |
| CN112341191A (en) * | 2020-10-26 | 2021-02-09 | 同济大学 | Lead-free ceramic dielectric with high energy storage density and high energy storage efficiency and preparation method thereof |
| CN115677342A (en) * | 2021-07-28 | 2023-02-03 | 中国科学院上海硅酸盐研究所 | Preparation method of perovskite structure BNT/LNO heteroepitaxial film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1176044C (en) | 2004-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1097833C (en) | Dielectric ceramic and monolithic ceramic electronic part using the same | |
| CN103613382B (en) | Sodium bismuth titanate-barium titanate-potassium bismuth titanate lead-free piezoelectric texture ceramic and preparation method thereof | |
| KR101588509B1 (en) | Sodium niobate powder, method of manufacturing a sodium niobate powder, plate-like particle, method of manufacturing a plate-like particle, and method of manufacturing an oriented ceramics | |
| JP2008537724A (en) | High power piezoelectric ceramic composition | |
| CN109626988B (en) | Piezoelectric ceramic material with high piezoelectric response and high Curie temperature and preparation method thereof | |
| CN1401611A (en) | Bismuth sodium titanate series film material and preparing process thereof | |
| CN108395245B (en) | High-energy-storage-density sodium bismuth titanate-based dielectric film and preparation method and application thereof | |
| CN1837143A (en) | Process for preparing submicro-crystal piezoelectric ceramics | |
| CN1532167A (en) | Ceramic powder with perofskite structure and its producing method, electronic parts and capacitor | |
| US5527480A (en) | Piezoelectric ceramic material including processes for preparation thereof and applications therefor | |
| CN1335284A (en) | Piezoelectric ceramics | |
| CN1096439C (en) | High-performance piezoelectric ceramic | |
| CN1314087C (en) | Ferroelectric thin membrane and forming method thereof | |
| CN1459810A (en) | Dielectric composition with improved uniformity and insulation resistance, its preparing method and multi-layer ceramic capacitor using same | |
| CN101962293A (en) | Method for preparing leadless piezoelectric ceramic thin film | |
| CN105732022A (en) | Preparation method of piezoelectric ceramic with high Curie temperature and film thereof | |
| JP2002265278A (en) | Titanium oxide powder, method for producing the same, method for producing barium titanate powder, dielectric ceramic and multilayer ceramic capacitor | |
| CN1245332C (en) | Method for preparing a stable lead zircon-titanate sol and method for preparing films based on same | |
| CN1476414A (en) | Production of dielectric barium titanate particles | |
| CN1750995A (en) | A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof | |
| Wu et al. | Lead Zirconate Titanate Prepared from Different Zirconium and Titanium Precursors by Sol‐Gel | |
| JP2008537927A (en) | High power piezoelectric ceramic composition | |
| CN101386426B (en) | Method for preparing leadless piezoelectric potassium sodium niobate film | |
| CN1967848A (en) | Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method | |
| CN1768016A (en) | Piezoelectric ceramic |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |