CN1389016A - High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier - Google Patents

High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier Download PDF

Info

Publication number
CN1389016A
CN1389016A CN01802680A CN01802680A CN1389016A CN 1389016 A CN1389016 A CN 1389016A CN 01802680 A CN01802680 A CN 01802680A CN 01802680 A CN01802680 A CN 01802680A CN 1389016 A CN1389016 A CN 1389016A
Authority
CN
China
Prior art keywords
distortion
mentioned
amplifier
frequency signal
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN01802680A
Other languages
Chinese (zh)
Other versions
CN100426664C (en
Inventor
中山正敏
堀口健一
池田幸夫
功刀贤
酒井雄二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1389016A publication Critical patent/CN1389016A/en
Application granted granted Critical
Publication of CN100426664C publication Critical patent/CN100426664C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • H03F3/604Combinations of several amplifiers using FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3223Modifications of amplifiers to reduce non-linear distortion using feed-forward
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements

Abstract

The patent relates a high-frequency amplifier. A divider 3 for dividing and distributing a high-frequency signal input from an input terminal to two output sides, a main amplifying unit 4, connected to one output side of the divider 3, for amplifying one high-frequency signal output from the divider 3, a subsidiary amplifying unit 5, connected to the other output side of the divider 3, for performing no operation in case of a low instantaneous electric power of the other high-frequency signal output from the divider 3 and amplifying the other high-frequency signal in case of a high instantaneous electric power of the other high-frequency signal and a circulator 6 for injecting the high-frequency signal amplified in the subsidiary amplifying unit 5 into the output side of the main amplifying unit 4 and injecting the high-frequency signal amplified in the main amplifying unit 4 into an output terminal 2 are arranged.

Description

High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier
Technical field
The present invention relates under big compensation work state, also can realize high efficiency high-frequency amplifier, the feed-forward amplifier that uses this high-frequency amplifier and distortion compensation amplifier.
Background technology
Utilization is called the various modulation systems of QPSK (Quadriphase Phase Shift Keying) or QAM (Quadrature Amplitude Modulation), and modulation belongs to the high-frequency signal of communication bands such as VHF (ultrashort wave) frequency band, UHF (utmost point ultrashort wave) frequency band or microwave band.
In general, these high-frequency signals in the time of the frequency band that is equivalent to modulating wave, its amplitude time to time change.In other words, the action of envelope variation is arranged.In mobile communicating base station etc., amplify under the situation of a plurality of signals the envelope time to time change of high-frequency signal simultaneously.
Fig. 1 is the figure of one of time waveform example of the high-frequency signal of expression envelope variation.Transverse axis express time, the longitudinal axis are represented the power of high-frequency signal.
As shown in Figure 1, change in the time of the envelope of high-frequency signal and time-shift, the instantaneous peak power ratio average power when maximum of known packets winding thread is big.The ratio of average power and peak power is called crest factor or peak power ratio, and in the high-frequency signal that uses in mobile communicating base station etc., this crest factor reaches more than the 10dB sometimes in recent years.
Therefore, amplify the high-frequency signal that big crest factor is arranged when supposing peak power, the average output power in the time of then must use making real work and poor (the so-called compensation) of saturation power be big high-frequency amplifier fully also unsaturatedly.
In general, according to desired characteristic, adjust inner output matching circuit, make the load impedance constrained optimization of the outlet side of seeing from amplifier elements such as FET with high-frequency amplifier.For example, if under the situation that makes the load impedance constrained optimization, efficient increases, and then under the situation that makes the load impedance constrained optimization, saturation power increases.
; for example in " monolithic integrated microwave circuit " (electronic intelligence Communications Society; he is outstanding in the phase river; P.74; Fig. 7 4) or " MMIC technology basis and use " (リ ア ラ イ ズ society, high wood is according to the rattan work, P.155; 39 (a) of Figure 12) described in, the load impedance condition that load impedance condition that efficient is high (high efficiency coupling) and saturation power are big (high output coupling) is inconsistent in general.
Fig. 2 illustrates to pattern the saturation power seen from the amplifier element of high-frequency amplifier and the efficient figure with respect to the variation of load impedance on Smith chart.Solid line is represented the contour of saturation power, and dotted line is represented the contour of efficient.
In Fig. 2, realize the load impedance of maximum saturation power, use with * number expression ● number expression realizes the load impedance of maximal efficiency, and both are inconsistent, and utilizes power output to realize that the load impedance of maximal efficiency changes.
Therefore, under high efficiency load impedance condition, cut the big part of instantaneous power of high-frequency signal, its result, big disturbing wave leaks in the adjacent channel, the perhaps high-frequency signal deterioration of Fa Songing, error of transmission increases.
On the other hand, under the load impedance condition of big saturation power, though do not cut the big part of the instantaneous power of high-frequency signal, as the decrease in efficiency of high-frequency amplifier.
Because above reason, be difficult to constitute the high-frequency amplifier of the high state of the big state of saturation power and efficient of to get both.In other words, under the big state of compensation, the efficient of high-frequency amplifier descends significantly.For example under the situation of single B level amplifier, theoretic maximal efficiency is 78% during operate in saturation, is about 25% but be compensated for as 10dB when work theoretic maximal efficiency.Therefore, become the inefficient reason that is necessary to amplify the high-frequency amplifier of the base station of the big high-frequency signal of crest factor using with low distortion.
In order to solve such problem, the existing high-frequency amplifier that utilizes switch load impedances such as switch is arranged.
Fig. 3 for example represents the special structure chart of driving disclosed existing high-frequency amplifier in the flat 9-284061 communique, and Fig. 4 is the structure chart of the output matching circuit that uses in this existing high-frequency amplifier of expression.
101 is amplifier elements of FET (FET) or BJT (bipolar junction transistor) etc. in Fig. 3, the 102nd, direct voltage is supplied with the power circuit of amplifier element 101, and the 103rd, output matching circuit, the 104th, load.
The structure of output matching circuit 103 as shown in Figure 4, the switch 106 of the transformer of being used by impedance conversion 105 and the tap terminal of switching transformer 105 constitutes.Utilize control signal Sct1 diverter switch 106, the value of the load impedance Zin when amplifier element 101 is seen output matching circuit 103 is changed.
By under the little situation of power output, switch to high efficiency load impedance condition, under the big situation of power output, switch to big power output the load impedance condition, be the impedance of saturation power increased load, irrespectively realize good efficiency with the size of power output.
In addition, open flat 5-54725 communique the spy, the spy opens in the flat 11-41118 communique, as similar high-frequency amplifier, disclose by switching and be arranged on the switch in the match circuit or in match circuit, use variable-capacitance element etc., load impedance is changed, irrespectively realize the prior art of good efficiency with the size of power output.
Because existing high-frequency amplifier as above constitutes, so there is the problem of the high-frequency amplifier that is difficult to constitute the fully big and excellent in efficiency of envelope variation, the saturation power of following the tracks of high-frequency signal.
As mentioned above, in existing technology,,, the envelope by the modulating wave decision corresponding to changing, is changed the time so the reaction time that load impedance changes is long owing to have diverter switch or variable element.Therefore, in each communique of prior art, as mentioned above, imagine high output mode or low output mode that its purpose is mainly used to switch transmitter, purpose is not to follow the tracks of the envelope of high-frequency signal, and load impedance is changed.
In addition, promptly enable to carry out high speed and switch, but be difficult to constitute the output circuit that can be used for high-frequency amplifier have sufficient anti-power characteristic, switch or a variable element that loss is few, what there was efficient in its result improves the little problem of effect.
The present invention finishes in order to solve above-mentioned problem, and purpose is to constitute a kind of variation of following the tracks of the envelope of modulation, and output load impedance is changed, the enough big and good high-frequency amplifier of efficient of saturation power.
In other words, though purpose be to constitute a kind of under the big operating state of compensation, be power output than saturation power hour, also can realize the high-frequency amplifier of high efficiency.
In addition, the objective of the invention is to constitute enough big and good feed-forward amplifier and the low distortion amplifier of efficient of a kind of saturation power.
Disclosure of an invention
High-frequency amplifier of the present invention is only under the big situation of the instantaneous power of the high-frequency signal of importing, high-frequency signal is distributed to secondary amplifying device and the constant main amplifying device that high-frequency signal is amplified work that amplifies work respectively, the high-frequency signal that secondary amplifying device is amplified injects the outlet side of main amplifying device, exports the high-frequency signal that main amplifying device amplifies.
Therefore, can follow the tracks of the envelope variation of the high-frequency signal of modulation, output load impedance is changed, can constitute the envelope variation of the high-frequency signal of following the tracks of modulation, output load impedance is changed, the enough big and good high-frequency amplifier of efficient of saturation power, in other words, even can obtain under the big operating state of compensation, be power output, also can constitute the effect of the high-frequency amplifier of high efficiency than saturation power hour.
High-frequency amplifier of the present invention has: distribute from first distributor of the high-frequency signal of input terminal input; The main amplifying device of a kind of high-frequency signal that constant amplification first distributor distributes; Only under the big situation of the instantaneous power of high-frequency signal, amplify the secondary amplifying device of the another kind of high-frequency signal of first distributor distribution; And the high-frequency signal that secondary amplifying device amplifies injected the outlet side of main amplifying device, export the circulator of the high-frequency signal that main amplifying device amplifies simultaneously from lead-out terminal.
Therefore, can obtain to constitute the effect of such high-frequency amplifier: the envelope variation that can follow the tracks of the high-frequency signal of modulation, output load impedance is changed, under the little situation of the instantaneous power of high-frequency signal, as high efficiency amplifier work, under the big situation of the instantaneous power of high-frequency signal, as the big amplifier work of saturation power.
High-frequency amplifier of the present invention has: distribute from first distributor of the high-frequency signal of input terminal input; Second distributor that distributes behind the phase difference that a kind of high-frequency signal subsidiary 90 that first distributor is distributed is spent; The constant first main amplifying device and the second main amplifying device that amplifies the high-frequency signal of second distributor distribution respectively; Only under the big situation of the instantaneous power of high-frequency signal, amplify the secondary amplifying device of the another kind of high-frequency signal of first distributor distribution; And the high-frequency signal that secondary amplifying device is amplified injects the outlet side of the first main amplifying device and the outlet side of the second main amplifying device respectively, after the high-frequency signal that simultaneously the first main amplifying device and the second main amplifying device has been amplified respectively is synthetic, from the one 90 degree hybrid circuit of lead-out terminal output.
Therefore, can reduce the loss of high-frequency signal, improve the efficient of high-frequency amplifier, can obtain the effect that can reduce cost simultaneously.
High-frequency amplifier of the present invention has adjustment by the amplitude of the high-frequency signal of secondary amplifying device and the first amplitude phase adjusting apparatus of phase place.
Therefore, can make the amplitude and the phase place optimization of the high-frequency signal that injects main amplifying device, under the big situation of instantaneous power, adjust the apparent load impedance of main amplifying device, can obtain further to improve the effect of the efficient of high-frequency amplifier.
High-frequency amplifier of the present invention has adjustment by the amplitude of the high-frequency signal of secondary amplifying device and the first amplitude phase adjusting apparatus of phase place.
Therefore, can make the amplitude and the phase place optimization of the high-frequency signal that injects main amplifying device, under the big situation of instantaneous power, adjust the apparent load impedance of main amplifying device, can obtain further to improve the effect of the efficient of high-frequency amplifier.
High-frequency amplifier of the present invention has and will supply with high-frequency signal that passes through main amplifying device or the deferred mount that passes through the high-frequency signal of secondary amplifying device time of delay.
Therefore, can make time of delay of path supply high frequency signal of time of delay of path supply high frequency signal of main amplifying device one side and secondary amplifying device one side consistent, can obtain in broadband, to realize injecting to main amplifying device the effect of high-frequency signal from secondary amplifying device.
High-frequency amplifier of the present invention has and will supply with high-frequency signal that passes through main amplifying device or the deferred mount that passes through the high-frequency signal of secondary amplifying device time of delay.
Therefore, can make time of delay of path supply high frequency signal of time of delay of path supply high frequency signal of main amplifying device one side and secondary amplifying device one side consistent, can obtain in broadband, to realize injecting to main amplifying device the effect of high-frequency signal from secondary amplifying device.
High-frequency amplifier of the present invention has the frequency equalizer that the frequency characteristic of the high-frequency signal that makes by main amplifying device or the high-frequency signal by secondary amplifying device changes.
Therefore, can make the frequency characteristic of path supply high frequency signal of the frequency characteristic of path supply high frequency signal of main amplifying device one side and secondary amplifying device one side consistent, can obtain in broadband, to realize injecting to main amplifying device the effect of high-frequency signal from secondary amplifying device.
High-frequency amplifier of the present invention has the frequency equalizer that the frequency characteristic of the high-frequency signal that makes by main amplifying device or the high-frequency signal by secondary amplifying device changes.
Therefore, can make the frequency characteristic of path supply high frequency signal of the frequency characteristic of path supply high frequency signal of main amplifying device one side and secondary amplifying device one side consistent, can obtain in broadband, to realize injecting to main amplifying device the effect of high-frequency signal from secondary amplifying device.
The instantaneous power that high-frequency amplifier of the present invention has corresponding to the high-frequency signal of importing secondary amplifying device changes, and adjustment changes the AM-AM/PM adjusting device that reaches by phase characteristic from the instantaneous power of the high-frequency signal of secondary amplifying device output,
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as power output of input power.
The instantaneous power that high-frequency amplifier of the present invention has corresponding to the high-frequency signal of importing secondary amplifying device changes, and adjustment changes the AM-AM/PM adjusting device that reaches by phase characteristic from the instantaneous power of the high-frequency signal of secondary amplifying device output,
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as power output of input power.
The AM-AM/PM adjusting device that high-frequency amplifier of the present invention had has: be connected in series in two capacitors between AM-AM/PM adjusting device input terminal and the AM-AM/PM adjusting device lead-out terminal; With between two capacitors and the diode that couples together; And connect dc bias power between two capacitors with resistance by bias voltage.
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as power output of input power.
The AM-AM/PM adjusting device that high-frequency amplifier of the present invention had has: be connected in series in two capacitors between AM-AM/PM adjusting device input terminal and the AM-AM/PM adjusting device lead-out terminal; With between two capacitors and the diode that couples together; And connect dc bias power between two capacitors with resistance by bias voltage.
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as power output of input power.
The AM-AM/PM adjusting device that high-frequency amplifier of the present invention had has: the 3rd distributor that distributes the part of high-frequency signal; Detect first amplitude detecting device of the amplitude of the high-frequency signal that the 3rd distributor distributes; The amplitude of high-frequency signal of the 3rd distributor and the second amplitude phase adjusting apparatus of phase place have been passed through in adjustment; And the amplitude of the high-frequency signal that detects with reference to first amplitude detecting device, control the control device of the second amplitude phase adjusting apparatus.
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as value of the power output of input power.
The AM-AM/PM adjusting device that high-frequency amplifier of the present invention had has: the 3rd distributor that distributes the part of high-frequency signal; Detect first amplitude detecting device of the amplitude of the high-frequency signal that the 3rd distributor distributes; The amplitude of high-frequency signal of the 3rd distributor and the second amplitude phase adjusting apparatus of phase place have been passed through in adjustment; And the amplitude of the high-frequency signal that detects with reference to first amplitude detecting device, control the control device of the second amplitude phase adjusting apparatus.
Therefore, can make the power level of secondary amplifying device work and, can make the signal optimization of injecting main amplifying device, can obtain to improve the effect of high-frequency amplifier overall efficiency corresponding to the optimizations such as value of the power output of input power.
High-frequency amplifier of the present invention has: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components; The amplitude of the higher harmonic components that the adjustment separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And be arranged between separator and the circulator or separator and the one 90 degree hybrid circuit between, the synthesizer that synthesizes of the higher harmonic components of fundametal compoment that separator is separated and the 3rd amplitude phase adjusting apparatus adjustment.
Therefore, the load impedance of main amplifying device can be adjusted, the effect of the efficient of main amplifying device can be obtained further to improve higher harmonic components.
High-frequency amplifier of the present invention has: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components; The amplitude of the higher harmonic components that the adjustment separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And be arranged between separator and the circulator or separator and the one 90 degree hybrid circuit between, the synthesizer that synthesizes of the higher harmonic components of fundametal compoment that separator is separated and the 3rd amplitude phase adjusting apparatus adjustment.
Therefore, the load impedance of the higher harmonic components of main amplifying device can be adjusted, the effect of the efficient of main amplifying device can be obtained further to improve.
High-frequency amplifier of the present invention has: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components; The amplitude of the higher harmonic components that the adjustment separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And the synthesizer that synthesizes of the higher harmonic components of fundametal compoment that is arranged between circulator and the secondary amplifying device, separator is separated and the 3rd amplitude phase adjusting apparatus adjustment.
Therefore, can reduce loss and size, the cost etc. of circulator, can adjust the load impedance of main amplifying device, can obtain further to improve the effect of the efficient of main amplifying device higher harmonic components.
High-frequency amplifier of the present invention has: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and higher harmonic components, fundametal compoment exported to the separator of the one 90 degree hybrid circuit; The amplitude of the higher harmonic components that the adjustment separator separates and the 3rd amplitude phase adjusting apparatus of phase place; The higher harmonic components of the 3rd amplitude phase adjusting apparatus adjustment is distributed into two the 2 90 degree hybrid circuit; Be arranged between the one 90 degree hybrid circuit and the first main amplifying device, to from a kind of higher harmonic components of the 2 90 degree hybrid circuit with passed through first synthesizer that the fundametal compoment of the one 90 degree hybrid circuit is synthesized; And be arranged between the one 90 degree hybrid circuit and the second main amplifying device, to from the another kind of higher harmonic components of the 2 90 degree hybrid circuit with passed through second synthesizer that the fundametal compoment of the one 90 degree hybrid circuit is synthesized.
Therefore, can obtain the effect that can reduce loss, raise the efficiency.
High-frequency amplifier of the present invention have be arranged between circulator and the lead-out terminal or the one 90 degree hybrid circuit and lead-out terminal between, make from the high-frequency signal of circulator or the one 90 degree hybrid circuit isolator by lead-out terminal.
Therefore, the characteristic variations of the secondary amplifying device that causes by reflected wave can be prevented, stable and the high high-frequency amplifier of efficient can be obtained to constitute.
High-frequency amplifier of the present invention have be arranged between circulator and the lead-out terminal or the one 90 degree hybrid circuit and lead-out terminal between, make from the high-frequency signal of circulator or the one 90 degree hybrid circuit isolator by lead-out terminal.
Therefore, the characteristic variations of the secondary amplifying device that causes by reflected wave can be prevented, stable and the high high-frequency amplifier of efficient can be obtained to constitute.
High-frequency amplifier of the present invention has and is arranged between secondary amplifying device and the circulator, makes high-frequency signal that secondary amplifying device the amplified isolator by circulator.
Therefore, can reduce the loss, can prevent the characteristic variations of the secondary amplifying device that causes by reflected wave again, can also obtain to constitute stable and the high high-frequency amplifier of efficient.
High-frequency amplifier of the present invention has and is arranged between secondary amplifying device and the one 90 degree hybrid circuit, makes high-frequency signal that secondary amplifying device the amplified isolator by the one 90 degree hybrid circuit.
Therefore, under the characteristic of the first main amplifying device and second main amplifying device situation inequality fully, can prevent that electric power from flowing into the outlet side of secondary amplifying device, can obtain to help the stabilisation of high-frequency amplifier, the effect of high efficiency.
High-frequency amplifier of the present invention has: handle from the base band processing device of the baseband signal of input terminal input; And the first frequency converting means that the baseband signal that base band processing device is handled is transformed into the high-frequency signal of importing main amplifying device and secondary amplifying device respectively.
Therefore, can realize that design is easy to low-frequency band and handles, can increase the degree of freedom of circuit structure, can constitute the high circuit of adjusting easily of circuit, precision.
High-frequency amplifier of the present invention has: handle from the base band processing device of the baseband signal of input terminal input; And the first frequency converting means that the baseband signal that base band processing device is handled is transformed into the high-frequency signal of importing main amplifying device and secondary amplifying device respectively.
Therefore, can realize that design is easy to low-frequency band and handles, can increase the degree of freedom of circuit structure, can constitute the high circuit of adjusting easily of circuit, precision.
The base band processing device that high-frequency amplifier of the present invention had has: the 4th distributor that will be distributed into two from the baseband signal of input terminal input; Detect second amplitude detecting device of the amplitude of a kind of baseband signal that the 4th distributor distributes; Adjustment is from the 4th amplitude phase adjusting apparatus of the amplitude of the baseband signal of second amplitude detecting device; And the amplitude and the pre-prepd data of the baseband signal that detects with reference to second amplitude detecting device, control the control device of the 4th amplitude phase adjusting apparatus.
Therefore, the degree of freedom of adjustment is big, can carry out the higher processing of precision, can obtain to help to improve the effect of the efficient of high-frequency amplifier.
The base band processing device that high-frequency amplifier of the present invention had has: the 4th distributor that will be distributed into two from the baseband signal of input terminal input; Detect second amplitude detecting device of the amplitude of a kind of baseband signal that the 4th distributor distributes; Adjustment is from the 4th amplitude phase adjusting apparatus of the amplitude of the baseband signal of second amplitude detecting device; And the amplitude and the pre-prepd data of the baseband signal that detects with reference to second amplitude detecting device, control the control device of the 4th amplitude phase adjusting apparatus.
Therefore, the degree of freedom of adjustment is big, can carry out the higher processing of precision, can obtain to help to improve the effect of the efficient of high-frequency amplifier.
High-frequency amplifier of the present invention has the 5th distributor of the high-frequency signal that distributes secondary amplifying device output; And the signal transformation that the 5th distributor distributes become the second frequency converting means of baseband signal, control device upgrades pre-prepd data with reference to the baseband signal of second frequency converting means conversion.
Therefore, even the characteristic variations of secondary amplifying device also can constantly be carried out Optimal Control, can obtain the effect of the high high-frequency amplifier of energy implementation efficiency, can also obtain to send to a distant place or receive, from the effect of remote monitoring and control high-frequency amplifier from a distant place by data with control device.
High-frequency amplifier of the present invention has the 5th distributor of the high-frequency signal that distributes secondary amplifying device output; And the signal transformation that the 5th distributor distributes become the second frequency converting means of baseband signal, control device upgrades pre-prepd data with reference to the baseband signal of second frequency converting means conversion.
Therefore, even the characteristic variations of secondary amplifying device also can constantly be carried out Optimal Control, can obtain the effect of the high high-frequency amplifier of energy implementation efficiency, can also obtain to send to a distant place or receive, from the effect of remote monitoring and control high-frequency amplifier from a distant place by data with control device.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 1.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 2.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 3.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 4.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 5.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 6.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 7.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 8.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 9.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 10.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 11.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 12.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 13.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 14.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 15.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 16.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 17.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 18.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 19.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 20.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 21.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 22.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 23.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 24.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 25.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 26.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 27.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 28.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Feed-forward amplifier of the present invention is extracted out in the loop in distortion and is had the described high-frequency amplifier of claim 29.
Therefore, can obtain to constitute the effect of the lower feed-forward amplifier of efficient height, distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 1; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 2; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 3; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 4; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 5; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 6; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 7; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 8; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 9; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 10; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 11; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 12; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 13; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 14; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 15; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 16; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 17; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 18; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 19; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 20; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 21; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 22; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 23; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 24; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 25; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 26; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 27; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 28; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
Low distortion amplifier of the present invention has: the described high-frequency amplifier of claim 29; And the compensation high-frequency amplifier is to the distortion linear compensation circuit of the distorted characteristic of high-frequency signal supply.
Therefore, energy implementation efficiency height, the lower compensated amplifier of distortion.
The simple declaration of accompanying drawing
Fig. 1 is one of the time waveform illustration of the high-frequency signal of expression envelope variation.
Fig. 2 is that the pattern face of land shows the figure corresponding to the variation of the saturation power of load impedance and efficient that sees from the amplifier element of high-frequency amplifier on Smith chart.
Fig. 3 is the special structure chart of driving disclosed existing high-frequency amplifier in the flat 9-284061 communique of expression.
Fig. 4 is the structure chart of the output matching circuit that uses in the existing high-frequency amplifier of expression.
Fig. 5 is the structure chart of the high-frequency amplifier of expression example 1 of the present invention.
Fig. 6 is one of the structure of main enlarging section of an expression and secondary enlarging section illustration.
Fig. 7 is the structure chart of the high-frequency amplifier of expression example 2 of the present invention.
Fig. 8 is the structure chart of the high-frequency amplifier of expression example 3 of the present invention.
Fig. 9 is the structure chart of the high-frequency amplifier of expression example 4 of the present invention.
Figure 10 is the structure chart of the high-frequency amplifier of expression example 4 of the present invention.
Figure 11 is the structure chart of the high-frequency amplifier of expression example 5 of the present invention.
Figure 12 is the structure chart of the high-frequency amplifier of expression example 6 of the present invention.
Figure 13 is the structure illustration of expression AM-AM/PM adjustment part.
Figure 14 is the structure chart that expression has the high-frequency amplifier of AM-AM/PM adjustment part.
Figure 15 is the structure chart that expression has the high-frequency amplifier of AM-AM/PM adjustment part.
Figure 16 is the structure chart of the high-frequency amplifier of expression example 7 of the present invention.
Figure 17 is the structure chart of the high-frequency amplifier of expression example 8 of the present invention.
Figure 18 is the structure chart of the high-frequency amplifier of expression example 9 of the present invention.
Figure 19 is the structure chart of the high-frequency amplifier of expression example 10 of the present invention.
Figure 20 is the structure chart of the high-frequency amplifier of expression example 11 of the present invention.
Figure 21 is the structure chart of the high-frequency amplifier of expression example 12 of the present invention.
Figure 22 is the structure chart of the high-frequency amplifier of expression example 13 of the present invention.
Figure 23 is the structure chart of expression as the AM-AM/PM adjustment part of baseband processing circuitry.
To be expression be transformed into the illustration that feeds back to baseband processing circuitry after the baseband signal with the part of the high-frequency signal of secondary enlarging section output to Figure 24.
Figure 25 is the structure chart of the feed-forward amplifier of expression example 14 of the present invention.
Figure 26 is the structure chart of the distortion compensation amplifier of expression example 15 of the present invention.
Figure 27 is the structure chart of the high-frequency amplifier of expression example 16 of the present invention.
Figure 28 is the figure that is illustrated in the measurement result when not making the work of secondary enlarging section in the high-frequency amplifier shown in Figure 27.
Figure 29 is the comparison diagram of the measurement result when being illustrated in the measurement result when making the work of secondary enlarging section in the high-frequency amplifier shown in Figure 27 and being worked in secondary enlarging section.
The optimal morphology of the usefulness that carries out an invention
Below, in order to be described in more detail the present invention, the optimal morphology that the present invention uses is implemented in explanation with reference to the accompanying drawings.
Example 1
Fig. 5 is the structure chart of the high-frequency amplifier of expression example 1 of the present invention.
In Fig. 5, the 1st, the input terminal of input high-frequency signal, the 2nd, the lead-out terminal of output high-frequency signal.The 3rd, the high-frequency signal from input terminal 1 input is distributed into two dispenser (first distributor), the 4th, the secondary enlarging section (secondary amplifying device) that is connected with an outlet side of dispenser 3.The 6th, circulator connects like this: the high-frequency signal of secondary enlarging section 5 outputs is injected the outlet side of main enlarging section 4, the high-frequency signal of main enlarging section 4 outputs is injected lead-out terminal.
Fig. 6 is one of the structure of main enlarging section 4 of expression and secondary enlarging section 5 illustration.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In main enlarging section 4 shown in Figure 6, the 7th, with an input matching circuit that outlet side is connected of dispenser 3, the 8th, amplify amplifier element from the high-frequency signal of input matching circuit 7, the 9th, the high-frequency signal that amplifier element 8 has been amplified is exported to the output matching circuit of circulator 6.
On the other hand, in secondary enlarging section 5 shown in Figure 6, the 10th, the input matching circuit that is connected with another outlet side of dispenser 3, the 11st, amplify amplifier element from the high-frequency signal of input matching circuit 10, the 12nd, the high-frequency signal that amplifier element 11 has been amplified is exported to the output matching circuit of circulator 6.
In addition, omitted the structural element of Dc bias being supplied with amplifier element 8, amplifier element 11 respectively among the figure.
Main enlarging section 4 is that to make bias voltage be the amplifier of so-called A level, AB level, B level, with the irrespectively constant amplifying high frequency signal of the size of instantaneous power.
On the other hand, secondary enlarging section 5 for example is that to make bias voltage be the amplifier of C level, and only because the envelope variation of modulated high-frequency signal, instantaneous power becomes amplifying high frequency signal under the big situation, does not export high-frequency signal under the little situation of instantaneous power.
Next illustrates working condition.
Under the little situation of the instantaneous power of high-frequency signal, 4 work of main enlarging section, do not work in secondary enlarging section 5.Therefore, the high-frequency signal that is input to main enlarging section 4 by input terminal 1, dispenser 3 is exaggerated element 8 and amplifies by behind the input matching circuit 7, by output matching circuit 9, circulator 6, from lead-out terminal 2 outputs (solid arrow Fig. 5).
See that from main enlarging section 4 the impedance Z L that outlet side is seen is the impedance (for example 50 Ω) that is connected on the lead-out terminal 2.In main enlarging section 4, with the load impedance ZL design output matching circuit 9 of outlet side, so that work expeditiously.Specifically, see the load impedance ZL_FET decision-making circuit constant that outlet side is seen, so that be coupling expeditiously from amplifier element 8.Therefore, under the little situation of instantaneous power, work expeditiously.
Under the big situation of the instantaneous power of high-frequency signal, work with main enlarging section 4 in secondary enlarging section 5.Therefore, the high-frequency signal that is input to secondary enlarging section 5 by input terminal 1, dispenser 3 is by behind the input matching circuit 10, be exaggerated element 11 and amplify,, be injected into the outlet side (dotted arrow among Fig. 5) of main enlarging section 4 by output matching circuit 12, circulator 6.
If see outlet side, can see that then the high-frequency signal identical with the high-frequency signal of main enlarging section 4 outputs returns from outlet side, changes significantly so can see load impedance ZL and ZL_FET from main enlarging section 4 one sides.
At this moment, if making the amplitude and the phase place of the high-frequency signal of the outlet side that is injected into main enlarging section 4 from secondary enlarging section 5 by circulator 6 is suitable value, then the load impedance ZL that sees from main enlarging section 4, the load impedance ZL_FET that sees from amplifier element 8 can regard as and be varied to saturation power seemingly and become big impedance.Therefore, compare with situation about not injecting from the high-frequency signal of secondary enlarging section 5, the saturation power of main enlarging section 4 increases.Therefore, do not switch the big part of instantaneous power, main enlarging section 4 amplifying high frequency signals, the high-frequency signal that has been exaggerated from lead-out terminal 2 output by circulator 6.
Like this, under the little situation of the instantaneous power of high-frequency signal, the load impedance of main enlarging section 4 is realizes the little high efficiency state of saturation power, and the high-frequency amplifier among Fig. 5 carries out work expeditiously.
On the other hand, under the big situation of the instantaneous power of high-frequency signal, owing to inject high-frequency signal from secondary enlarging section 5 by the outlet side of circulator 6 to main enlarging section 4, so the load impedance of seeing from the amplifier element 8 of main enlarging section 4 changes significantly, the saturation power of the high-frequency amplifier among Fig. 5 increases.
Therefore, the high-frequency amplifier of this example 1 and the size of saturation power are irrelevant, even also can realize working expeditiously when low output.
With different in the past, the high-frequency amplifier of this example 1 is not owing to have diverter switch and variable-capacitance element, change so can follow the tracks of the high speed of the envelope of high-frequency signal fully, the instantaneous power of in fact impossible tracking modulating wave changes, makes the load impedance of output matching circuit 9 to change equivalently and becomes possibility in existing structure.
As a result, can constitute with saturation power size irrelevant, the high-frequency amplifier that also can work expeditiously during low output, in other words, even can constitute at the high-frequency amplifier that compensates efficient under the big operating state.
In addition, compared with the past, owing to do not use diverter switch and variable-capacitance element, thus problems such as the resistance to pressure that caused by these structural elements and loss can not take place, thus the high-frequency amplifier that output is higher also can be applicable to, and can make the efficient height.
Because secondary enlarging section 5 is C level amplifiers,, there is not dc power so do not work under the little situation of the instantaneous power of the high-frequency signal in being input to input terminal 1 yet.Therefore, can not reduce the overall efficiency of the system that constitutes by main enlarging section 4 and secondary enlarging section 5.
In addition, amplification work is carried out in 5 of secondary enlarging sections under the big situation of instantaneous power, and the output high-frequency signal is not exported high-frequency signal under the little situation of instantaneous power, can biasing, so that dc power is enough little.Though wish so-called C level bias state, even under B level bias state, dc power is also very little under the little situation of instantaneous power, so can reach the purpose of the high efficiency of high-frequency amplifier.
In addition, under the big situation of instantaneous power, the high-frequency signal of exporting from secondary enlarging section 5 is in the outlet side reflection of main enlarging section 4, and the part of power output appears in the result on lead-out terminal 2, so the power consumption of secondary enlarging section 5 can not wasted, can not become the reason that efficient is descended significantly.
In addition, in the above description, although understand the situation of the amplifier element 8,11 that in main enlarging section 4, secondary enlarging section 5, uses single-stage respectively, but also can main enlarging section 4, secondary enlarging section 5 both or any one in use the amplifier element of multistage connection, can adjust the gain of high-frequency amplifier.
As mentioned above, if adopt this example 1, then owing to have: the dispenser 3 that will be distributed into two from the high-frequency signal of input terminal 1 input; Be connected, amplify main enlarging section 4 with an outlet side of dispenser 3 from the high-frequency signal of dispenser 3; Be connected, under the little situation of the instantaneous power of high-frequency signal, do not work with another outlet side of dispenser 3, amplify secondary enlarging section 5 from the high-frequency signal of dispenser 3; And with the high-frequency signal that has amplified secondary enlarging section 5 injects the outlet side of main enlarging section 4, the high-frequency signal that simultaneously main enlarging section 4 amplified injects lead-out terminal 2 circulator 6, so can follow the tracks of the variation of the envelope of modulated high-frequency signal, output load impedance is changed, under the little situation of the instantaneous power of high-frequency signal, as high efficiency amplifier work, under the big situation of the instantaneous power of high-frequency signal, as the big amplifier work of saturation power, can obtain to constitute the effect of above-mentioned such high-frequency amplifier.
Example 2
Fig. 7 is the structure chart of the high-frequency amplifier of expression example 2 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Fig. 7, the 13rd, with the 90 degree hybrid circuits (second distributor) that are distributed into two behind the phase difference of spending from the high-frequency signal additional 90 of dispenser 3,14A, 14B is two enlarging sections (the first main amplifying device that amplifies two high-frequency signals of 90 degree hybrid circuits, 13 outputs respectively, the second main amplifying device), the 15th, the high-frequency signal that secondary enlarging section 5 is exported is distributed into two, inject enlarging section 14A respectively, the outlet side of 14B makes enlarging section 14A, the high-frequency signal coupling back that 14B exports respectively is from the 90 degree hybrid circuits (the 2 90 degree hybrid circuit) of lead-out terminal 2 outputs.
In this example 2, constitute main enlarging section 4 by 90 degree hybrid circuits 13, enlarging section 14A, 14B and 90 degree hybrid circuits 15.
The work of main enlarging section 4 and secondary enlarging section 5 is identical with example 1.In other words, enlarging section 14A, the 14B of main enlarging section 4 amplifies the amplifier of work with the size of the instantaneous power of the high-frequency signal of input is irrelevant, is according to so-called A level, AB level, the biased amplifier of B level.In addition, secondary enlarging section 5 is for example according to the biased amplifier of C level, under variation, instantaneous power along with the envelope of modulated high-frequency signal become big situation, carries out amplification work, the output high-frequency signal.The output of secondary enlarging section 5 is connected on the separation terminal of the 90 degree hybrid circuits 15 that constitute main enlarging section 4.
Next illustrates working condition.
Under the little situation of the instantaneous power of the high-frequency signal of importing, 4 work of only main enlarging section.Therefore, a kind of high-frequency signal that dispenser 3 is distributed is amplified by two enlarging section 14A, 14B respectively by 90 degree hybrid circuits 13.The output power of two enlarging section 14A, 14B flows along the solid arrow among Fig. 7, and is synthetic in 90 degree hybrid circuits 15, from lead-out terminal 2 outputs.At this moment on the separation terminal of 90 degree hybrid circuits 15 output signal does not appear.The load impedance of seeing from main enlarging section 4 is the impedance (for example 50 Ω) that is connected on the lead-out terminal 2, and at this moment the match circuit energy efficiency of high-frequency amplifier inside is adjusted well.
On the other hand, under the big situation of instantaneous power, work respectively in main enlarging section 4, secondary enlarging section 5.Therefore, the another kind of high-frequency signal that dispenser 3 is distributed is amplified by secondary enlarging section 5 by 90 degree hybrid circuits 13.The output power of secondary enlarging section 5 flows along the dotted arrow among Fig. 7, is distributed into two by 90 degree hybrid circuits 15, injects the outlet side of enlarging section 14A, 14B respectively.
Because the reason identical with example 1, the apparent load impedance of enlarging section 14A, the 14B of main enlarging section 4 changes according to the high-frequency signal that injects from secondary enlarging section 5, at this moment owing to becoming the big load impedance of saturation power, so the signal of big instantaneous power also can amplify.Therefore, do not cut the big part of instantaneous power, enlarging section 14A, 14B be amplifying high frequency signal respectively, and 90 degree hybrid circuits 15 are exported the synthetic back of these high-frequency signals that are exaggerated from lead-out terminal 2.
Identical with example 1, the high-frequency amplifier of this example 2 of main enlarging section 4 and secondary enlarging section 5 is arranged, even also have no relations when saturation power is big, also can raise the efficiency during low output.
Under the situation that constitutes powerful high-frequency amplifier, the structure of the main enlarging section 4 among Fig. 7, so-called balance amplifier structure also can be used two amplifier 14A, 14B as synthetic power synthesizer in general.Owing to spend the separation terminal of hybrid circuits 15 from 90 of outlet side the high-frequency signal of secondary enlarging section 5 outputs is imported enlarging section 14A, 14B respectively, so do not need to use the circulator 6 of example 1, also can obtain the effect of example 1, in addition, can also obtain effect owing to the reduction cost degradation raising the efficiency, install of loss.
In addition, 90 degree hybrid circuits 13 of input side are provided with for 90 phase differences of spending that compensate the high-frequency signal that produces in 90 degree hybrid circuits 15 of outlet side, for example with distributor and deferred mount high-frequency signal is distributed into two, the phase difference of additional 90 degree gets final product.
As mentioned above, if adopt this example 2, then owing to have: the dispenser 3 that will be distributed into two from the high-frequency signal of input terminal 1 input; Be connected, will be distributed into two 90 degree hybrid circuits 13 from the high-frequency signal of dispenser 3 with an outlet side of dispenser 3; Amplify enlarging section 14A, 14B respectively from the high-frequency signal of 90 degree hybrid circuits 13; Be connected, under the little situation of the instantaneous power of high-frequency signal, do not work with another outlet side of dispenser 3, under the big situation of the instantaneous power of high-frequency signal, amplify secondary enlarging section 5 from the high-frequency signal of dispenser 3; And the outlet side that the high-frequency signal that has amplified secondary enlarging section 5 is injected enlarging section 14A, 14B respectively, the high-frequency signal that simultaneously enlarging section 14A, 14B has been amplified respectively is coupled together, export to 90 degree hybrid circuits 15 of lead-out terminal 2, so except the effect identical with example 1, do not need can also obtain the circulator 6 of example 1, also can reduce the loss of high-frequency signal, improve the efficient of high-frequency amplifier, the effect that can reduce cost simultaneously.
Example 3
Fig. 8 is the structure chart of the high-frequency amplifier of expression example 3 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Fig. 8, the 16th, adjust the variable attenuation portion (the first amplitude phase adjusting apparatus) of the amplitude of the high-frequency signal by secondary enlarging section 5, the 17th, adjust the variable phase shift portion (the second amplitude phase adjusting apparatus) of the phase place of the high-frequency signal by secondary enlarging section 5.In this example 3, variable attenuation portion 16 and variable phase shift portion 17 are arranged between secondary enlarging section 5 and the circulator 6, adjust the amplitude and the phase place of the high-frequency signal of secondary enlarging section 5 outputs.
Owing to do like this, so can make amplitude and the phase place optimization of injecting the high-frequency signal of main enlarging section 4 by circulator 6, adjust the apparent load impedance of the main enlarging section 4 under the big situation of instantaneous power, can obtain further to improve the effect of the efficient of high-frequency amplifier.
Example 4
In example 4, illustrate and adopt the structure different with the variable attenuation portion 16 of example 3, variable phase shift portion 17.
Fig. 9 is the structure chart of the high-frequency amplifier of expression example 4 of the present invention.The structure identical or suitable with Fig. 8 is marked with identical symbol.
In Fig. 9, variable attenuation portion 16 and variable phase shift portion 17 are arranged between dispenser 3 and the secondary enlarging section 5, adjust the amplitude phase place of high-frequency signal respectively after, amplify with secondary enlarging section 5.Owing to do like this, so the loss of variable attenuation portion 16, variable phase shift portion 17 is to the not influence of high-frequency signal from 5 outputs of secondary enlarging section, so except the effect identical, compare, can obtain further to improve the effect of the efficient of high-frequency amplifier with example 3 with example 3.
In addition, also variable attenuation portion 16, variable phase shift portion 17 can be used for the high-frequency amplifier shown in the example 2.
Figure 10 is the structure chart of the high-frequency amplifier of expression example 4 of the present invention.The structure identical or suitable with Fig. 7, Fig. 8 is marked with identical symbol.
In Figure 10, between dispenser shown in Figure 73 and secondary enlarging section 5, use variable attenuation portion 16, variable phase shift portion 17.Even like this, also can obtain the effect identical with the situation of Fig. 9.
In addition, also variable attenuation portion 16, variable phase shift portion 17 can be used between secondary enlarging section 5 shown in Figure 7 and the 90 degree hybrid circuits 15, can obtain and effect that example 3 is same.
Example 5
Figure 11 is the structure chart of the high-frequency amplifier of expression example 5 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 11, the 18th, with the delay circuit of supplying with time of delay by the high-frequency signal of secondary enlarging section 5 (deferred mount).In Figure 11, delay circuit 18 is arranged between dispenser 3 and the secondary enlarging section 5.Owing to utilize delay circuit 18 to make time of delay of path supply high frequency signal of main enlarging section 4 one sides consistent, so can obtain in broadband range, to realize from secondary enlarging section 5 effect to the effect of main enlarging section 4 injection high-frequency signals with the time of delay of the path supply high frequency signal of secondary enlarging section 5 one sides.
As delay circuit 18, both can adopt general circuits such as coaxial line, also can adopt the delay filter of the lag characteristic of utilizing band pass filter etc.
In addition, both delay circuit 18 can be arranged between secondary enlarging section 5 and the circulator 6, also can be according to extent time of delay of main enlarging section 4 and secondary enlarging section 5, be arranged on delay circuit 18 between dispenser 3 and the main enlarging section 4 or between main enlarging section 4 and the circulator 6.
In addition, also delay circuit 18 can be applied in the high-frequency amplifier of example 2.In other words, in Fig. 7, by delay circuit 18 is arranged between dispenser 3 and the secondary enlarging section 5 or secondary enlarging section 5 and 90 degree hybrid circuits 15 between, between between dispenser 3 and the main enlarging section 4 or main enlarging section 4 or enlarging section 14A, 14B and the 90 degree hybrid circuits 13, can obtain same effect.
In addition, according to being used for making the consistent frequency equalizer of frequency characteristic of the frequency characteristic of the high-frequency signal by main enlarging section 4 and the high-frequency signal by secondary enlarging section 5 with the same structure setting of delay circuit 18, also can obtain broadband effect, in addition, also can be provided with delay circuit 18, frequency equalizer both.
Example 6
Figure 12 is the structure chart of the high-frequency amplifier of expression example 6 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 12, the 19th, corresponding to the instantaneous power variation of the high-frequency signal of importing secondary enlarging section 5, the instantaneous power variation of adjusting the high-frequency signal of exporting from secondary enlarging section 5 reaches the AM-AM/PM adjustment part (AM-AM/PM adjusting device) of passing through phase characteristic.In this example 6, AM-AM/PM adjustment part 19 is arranged between dispenser 3 and the secondary enlarging section 5.
Only under the instantaneous power of high-frequency signal reaches situation more than a certain numerical value, secondary enlarging section 5 is power output, but in order to reach the overall high efficiency of high-frequency amplifier, the instantaneous power value that requires secondary enlarging section 5 to start working reaches the variation optimization corresponding to the instantaneous output of instantaneous input power.Promptly must make variation (the so-called AM-AM characteristic) optimization of the power output when changing corresponding to the input power of secondary enlarging section 5 one sides.
In addition, if because the variation of instantaneous input power, cause the phase characteristic (so-called AM-AM characteristic) of passing through of secondary enlarging section 5 to change, then change by circulator 6, the phase place of high-frequency signal that is injected into the outlet side of main enlarging section 4, the apparent load impedance of main enlarging section 4 changes and leaves desirable state.
In order to compensate above phenomenon, realize best effort, and AM-AM/PM adjustment part 19 is set.
AM-AM/PM adjustment part 19 generally can constitute with nonlinear circuit.
Figure 13 is the structure illustration of expression AM-AM/PM adjustment part 19.
In Figure 13, the 20th, input terminal (AM-AM/PM adjustment part input terminal), the 21st, two capacitors that direct-current blocking-up is used, the 22nd, dc bias power, the 23rd, bias voltage resistance, the 24th, diode, the 25th, lead-out terminal (AM-AM/PM adjustment part lead-out terminal).
AM-AM/PM adjustment part 19 among Figure 13 by two capacitors 21 of be connected in series input terminal 20 and lead-out terminal 25, with between two capacitors 21 and the diode 24, the dc bias power of with resistance 23 Dc bias being supplied with between two capacitors 21 by bias voltage 22 that couple together constitute.
AM-AM/PM adjustment part 19 shown in Figure 13 is to use IEEE Transactionon Microwave Theory and Techniques, vol.45, No.12, one of nonlinear circuit of disclosed diode example in 2431 pages of December 1997 is commonly used to the linear compensation circuit of amplifier nonlinearity (being distortion) usefulness by way of compensation.Owing to constitute like this AM-AM/PM adjustment part 19, so can obtain can be with the nonlinear effect of simple structure compensation pair enlarging section 5.
Be not limited to Figure 13, circuit constant of the circuit by will generally having nonlinear characteristic etc. is altered to desirable value, just can constitute AM-AM/PM adjustment part 19.
Figure 14 is the structure chart that expression has the high-frequency amplifier of the AM-AM/PM adjustment part 19 different with Figure 13.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 14, the 26th, the dispenser (the 3rd distributor) of the part of the high-frequency signal that taking-up dispenser 3 is distributed, the 27th, detection is by the level detection portion (first amplitude detecting device) of the instantaneous power level of the high-frequency signal of dispenser 26 distribution, the 28th, according to the instantaneous power level of level detection portion 27, control variable attenuation portion 29 (the second amplitude phase adjusting apparatus), variable phase shift portion (the 3rd amplitude phase adjusting apparatus).
According to the instantaneous power level that level detection portion 27 is detected, adjust variable attenuation portion 29, variable phase shift portion 30 respectively, so that reach the attenuation amount of phase shift that control part 28 store in advance, can be as 19 utilizations of AM-AM/PM adjustment part.
Figure 15 is the structure chart that expression has the high-frequency amplifier of the AM-AM/PM adjustment part 19 different with Figure 13, Figure 14.The structure identical or suitable with Figure 14 is marked with identical symbol.
Control part 28 shown in Figure 15 changes the bias condition of secondary enlarging section 5 according to the instantaneous power level that is detected by dispenser 26, level detection portion 27.Along with bias condition changes,, can realize desirable AM-AM/PM characteristic owing to gain with by phase place so secondary enlarging section 5 according to the instantaneous power level of input, changes bias condition.Like this, by changing bias condition, utilize the second amplitude phase adjusting apparatus of secondary enlarging section 5 as high-frequency signal.
As mentioned above, by AM-AM/PM adjustment part 19 is set, can make the power level of secondary enlarging section 5 work and, can make the signal optimization of injecting main enlarging section 4, can obtain to improve the effect of the overall efficiency of high-frequency amplifier corresponding to the optimizations such as value of the power output of input power.
In addition, even it is also passable that AM-AM/PM adjustment part 19 is applied to example 2, can obtain same effect.
Example 7
Figure 16 is the structure chart of the high-frequency amplifier of expression example 7 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 16, the 31st, separate the fundametal compoment of the high-frequency signal of exporting secondary enlarging section 5 and the duplexer (separator) of two times of higher harmonic components such as ripple, the 32nd, the variable attenuation portion (the 3rd amplitude phase adjusting apparatus) of the amplitude of the higher harmonic components that adjustment duplexer 31 separates, the 33rd, adjust the variable phase shift portion (the 4th amplitude phase adjusting apparatus) of the phase place of the higher harmonic components that duplexer 31 separates, the 34th, export to the duplexer (synthesizer) of circulator 6 after the fundametal compoment that the higher harmonic components of having passed through variable phase shift portion 33 is separated with duplexer 31 is synthetic.
As everyone knows, by in output circuit, making the load impedance optimization of two times of higher harmonic components such as ripple, can improve the efficient and the distorted characteristic of high-frequency amplifier.In addition, in general, the C level amplifier or the B level amplifier that use in the secondary enlarging section 5 are non-linear according to it, export a plurality of higher harmonic components.
Therefore, by regulating from the amplitude phase place of the higher harmonic components of secondary enlarging section 5 outputs, the same outlet side that injects main enlarging section 4 with fundametal compoment can change the load impedance of the 4 pairs of high order harmonic components in main enlarging section, can further improve the efficient of main enlarging section 4.
Be separated in fundametal compoment and the higher harmonic components that takes place in the secondary enlarging section 5 with duplexer 31.Fundametal compoment is transfused to duplexer 34, after higher harmonic components has been adjusted its amplitude and phase place by variable attenuation portion 32, variable phase shift portion 33, in duplexer 34, synthesize (dotted arrow among Figure 16) again, inject the outlet side of main enlarging section 4 by circulator 6 with fundametal compoment.At this moment, adjust variable attenuation portion 32, variable phase shift portion 33, so that realize injecting the optimum condition (phase amplitude) of higher harmonic components of the outlet side of main enlarging section 4.
Owing to behind the amplitude and phase place optimization with the higher harmonic components of the high-frequency signal of secondary enlarging section 5 outputs, inject the outlet side of main enlarging section 4, so can obtain further to improve the effect of the efficient of high-frequency amplifier.
In addition, in the high-frequency amplifier of example 2,, can obtain same effect even duplexer 31, variable attenuation portion 32, variable phase shift portion 33 and duplexer 34 are arranged on secondary enlarging section 5 and 90 degree are also passable between the hybrid circuits 15.
Example 8
Also the duplexer 34 shown in the example 7 can be arranged on the outlet side of the main enlarging section 4 among Fig. 5.
Figure 17 is the structure chart of the high-frequency amplifier of expression example 8 of the present invention.The structure identical or suitable with Fig. 5, Figure 16 is marked with identical symbol.
In Figure 17, duplexer 34 is arranged between circulator 6 and the main enlarging section 4.Therefore, the fundametal compoment of separating with duplexer 31 is transfused to duplexer 31 afterwards by circulator 6, in duplexer 34, synthesize the outlet side that synthetic fundametal compoment and higher harmonic components are injected into main enlarging section 4 with the higher harmonic components of having passed through variable attenuation portion 32, variable phase shift portion 33.
In other words, can obtain the effect same with example 7, compare with example 7 simultaneously, because just fundametal compoment by circulator 6, so can use the circulator 6 of the narrow-band that is fit to fundametal compoment, the loss of circulator 6, big or small cost etc. can be reduced, the efficient and the cost degradation of high-frequency amplifier can be obtained to realize improving.
Example 9
Figure 18 is the structure chart of the high-frequency amplifier of expression example 9 of the present invention.The structure identical or suitable with Fig. 7, Figure 16 is marked with identical symbol.
In Figure 18, the 35th, the phase differences of 90 degree are added in the 90 degree hybrid circuits (the 2 90 degree hybrid circuit) that distribute on the higher harmonic components of the variable attenuation portion 32 of having passed through, variable phase shift portion 33.34A, 34B are the duplexers (first synthesizer, second synthesizer) that is separately positioned between enlarging section 14A and the 90 degree hybrid circuits 15, synthesizes between enlarging section 14B and the 90 degree hybrid circuits 15, to fundametal compoment and higher harmonic components.
Utilize 90 degree hybrid circuits 13 owing to constitute enlarging section 14A, the 14B of main enlarging section 4, carry out work with 90 phase differences of spending, so the higher harmonic components of injecting also is necessary to have the phase difference of 90 degree.In this example 9, with 90 degree hybrid circuits 35 phase difference of 90 degree is supplied with the higher harmonic components that is distributed into two, after utilizing duplexer 34A, 34B respectively the fundametal compoment of having passed through 90 degree hybrid circuits 15 and the higher harmonic components of having passed through 90 degree hybrid circuits 35 synthesize, injection enlarging section 14A, 14B.
By such processing, can obtain the effect same with example 8, simultaneously different with example 8, do not need to use circulator 6, so can obtain the effect that can reduce loss, raise the efficiency.
Example 10
Figure 19 is the structure chart of the high-frequency amplifier of expression example 10 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 19,36 are arranged on the isolator between circulator 6 and the lead-out terminal 2, are provided with to such an extent that make high-frequency signal lead to lead-out terminal 2 from circulator 6.
Under lead-out terminal 2 directly was connected situation on the antenna etc., because the difference of the surrounding enviroment of antenna, high-frequency signal was from antenna-reflected sometimes.
At this moment, because the effect of circulator 6, reflected wave does not appear in the outlet side in main enlarging section 4.Therefore, reflected wave by circulator 6, is added in the outlet side of secondary enlarging section 5, so by isolator 36 is set, reflected wave is separated from lead-out terminal 2.Therefore, the characteristic variations of the secondary enlarging section 5 that causes by reflected wave can be prevented, the effect of the high-frequency amplifier stable, that efficient is high can be obtained to constitute.
In addition, in the structure of example 2,, can obtain same effect if isolator 36 is arranged between 90 degree hybrid circuits 15 and the lead-out terminal 2.
Example 11
Also the isolator 36 shown in the example 10 can be arranged between secondary enlarging section 5 and the circulator 6.
Figure 20 is the structure chart of the high-frequency amplifier of expression example 11 of the present invention.The structure identical or suitable with Fig. 5, Figure 19 is marked with identical symbol.
In Figure 20, isolator 36 is arranged between secondary enlarging section 5 and the circulator 6, be provided with to such an extent that make the direction of leading to circulator 6 from the high-frequency signal of secondary enlarging section 5.Even from lead-out terminal 2 inputs, reflected wave does not return the outlet side of main enlarging section 4 and secondary enlarging section 5 yet from the reflected wave of antenna, thus the same with example 10, can prevent the deterioration that the characteristic of main enlarging section 4, secondary enlarging section 5 is caused by reflected wave.
Can obtain the effect same with example 10, compare with example 9 simultaneously, the loss of the high-frequency signal of main enlarging section 4 outputs is the loss in the circulator 6, can reduce the loss of isolator 36, can obtain to improve the effect of the efficient of high-frequency amplifier.
Example 12
Also the isolator 36 shown in the example 10,11 can be applied in the high-frequency amplifier of example 2.
Figure 21 is the structure chart of the high-frequency amplifier of expression example 12 of the present invention.The structure identical or suitable with Fig. 7, Figure 19 is marked with identical symbol.
In Figure 21, isolator 36 is arranged between secondary enlarging section 5 and the 90 degree hybrid circuits 15, isolator 36 is provided with to such an extent that make the high-frequency signal of secondary enlarging section 5 outputs lead to the direction of the separation terminal of 90 degree hybrid circuits 15.
Have under the situation of identical characteristic at the enlarging section of main enlarging section 4 14A, 14B, power output on the separation terminal of 90 degree hybrid circuits 15, do not occur from enlarging section 14A, 14B., under the different situation of the characteristic of enlarging section 14A, 14B, on the separation terminal of 90 degree hybrid circuits 15, occur power output therewith accordingly, be injected into the outlet side of secondary enlarging section 5 from enlarging section 14A, 14B.Because the effect of this phenomenon, the characteristic of secondary enlarging section 5 changes, along with the difference of situation, instantaneous power originally with regard to little situation under, working forcibly owing to the effect of the electric power that flows into from outlet side in the secondary enlarging section 5 that do not work, direct current ought to not flow, electric current takes place flow.
Therefore, by isolator 36 being arranged between secondary enlarging section 5 and the 90 degree hybrid circuits 15, under the characteristic of enlarging section 14A, 14B situation inequality fully, can prevent that also electric power from flowing into the outlet side of secondary enlarging section 5, can obtain to help the stabilisation of high-frequency amplifier, the effect of high efficiency.
Example 13
Figure 22 is the structure chart of the high-frequency amplifier of expression example 13 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 22, the 37th, the input terminal of input baseband signal, the 38th, to handling the baseband processing circuitry (base band processing device) of distribution from the baseband signal of input terminal 37, the 39th, will be transformed into the frequency-conversion circuit (first frequency converting means) of high-frequency signal from two baseband signals of baseband processing circuitry 38.
In frequency- conversion circuit 39,40A, 40B are the frequency translation frequency mixers, the 41st, and local oscillator portion.After the baseband signal that frequency translation is exported the local signal and the baseband processing circuitry 38 of 41 outputs of local oscillation portion respectively with frequency mixer 40A, 40B is carried out mixing, export to main enlarging section 4, secondary enlarging section 5 respectively.
In example 1~12, the signal that inputs to input terminal 1 is a high-frequency signal, distribute with 3 pairs of these high-frequency signals of dispenser, be input in main enlarging section 4 and the secondary enlarging section 5, but in example 13, in the Base-Band Processing portion 38 of communication equipment, the baseband signal of low frequency is distributed to two paths.That is, distribute to path that comprises main enlarging section 4 and the path that comprises secondary enlarging section 5 by Base-Band Processing portion 38.
The baseband signal that is input to input terminal 37 is distributed into after two by Base-Band Processing portion 38, is transformed into high-frequency signal by frequency-conversion circuit 39.Identical with example 1, these two high-frequency signals are amplified by main enlarging section 4 and secondary enlarging section 5 respectively, export to lead-out terminal 2 via circulator 6.
After by Base-Band Processing portion 38 base band signal process being distributed into two baseband signals, be transformed into two high-frequency signals by frequency-conversion circuit 39, so the processing of the variable attenuator 16 shown in the example 3~6, variable phase shifter 17, delay circuit 18, frequency equalizer, AM-AM/PM adjustment part 19 etc. can be applied to Base-Band Processing portion 38, can be easy to realize in the low-frequency band above-mentioned various processing in design.Therefore, the degree of freedom of these circuit structures increases, and can constitute the high circuit of adjusting easily of circuit, precision.
For example Figure 23 is the figure of expression as the structure of the AM-AM/PM adjustment part of baseband processing circuitry 38.The structure identical or suitable with Figure 22 is marked with identical symbol.
In Figure 23, the 42nd, distribute dispenser (the 4th distributor) from the baseband signal of input terminal 37, the 43rd, detection is by the level detection portion (second amplitude detecting device) of the level of the high-frequency signal of dispenser 42 distribution.The 44th, control part (control device), the 45th, ROM, the 46th, the level phse conversion portion (the 4th amplitude phase adjusting apparatus) of the level phase place of adjustment high-frequency signal.If control part 44 is received the level value that level detection portion 43 is detected, just with reference to the data of storing in advance among the ROM45, control level phse conversion portion 46.In addition, 47A, 47B will become the D/A transformation component of analog signal from the digital signal conversion of dispenser 42, level phse conversion portion 46 respectively.
Be input to baseband signal in the input terminal 37 and be assigned with portion 42 and be distributed into two, a baseband signal that is assigned with is transformed into the baseband signal of simulation by D/A transformation component 47.
In addition, the level of another baseband signal that is assigned with detects in level detection portion 43, and control part 44 is with reference to the level value that detects and be stored in data among the ROM in advance, control level/phse conversion portion 46, the level and the phase place of adjustment baseband signal.The baseband signal that has been adjusted level and phase place is transformed into the baseband signal of simulation by D/A transformation component 47.
The baseband signal that D/ A transformation component 47A, 47B export respectively is transformed into high-frequency signal respectively by frequency conversion part shown in Figure 22 39.
Like this, handle owing to carry out these with the digital signal processing method of base band, so compare with the situation of processing high-frequency signal, the degree of freedom of adjustment is big, can carry out the higher processing of precision, and the result can obtain to help to improve the effect of the efficient of high-frequency amplifier.
In addition, to be expression be transformed into baseband signal with the part of the high-frequency signal of secondary enlarging section 5 outputs to Figure 24, feeds back to the illustration of baseband processing circuitry 38.The structure identical or suitable with Figure 23 is marked with identical symbol.
In Figure 24, the 48th, the RAM of energy rewrite data, the 49th, analog signal is transformed into the A/D converter of digital signal, the 50th, the frequency mixer (second frequency converting means) that local signal and high-frequency signal from local oscillation portion 41 are carried out mixing, the 51st, the high-frequency signal that secondary enlarging section 5 is amplified is distributed to the dispenser (the 5th distributor) of circulator 6 and frequency mixer 50.
The signal of importing from the input terminal 37 of baseband signal is distributed by dispenser 42.Detect the instantaneous level of the baseband signal of distributing to secondary enlarging section 5 one sides by level detection portion 43, control circuit 44 is with reference to the data of storing among detected instantaneous level and the RAM, and control level phse conversion portion 46 realizes desirable AM-AM/PM characteristic.
Take out the part of the output of secondary enlarging section 5 with dispenser 51, in frequency mixer 50, carried out being transformed into baseband signal with A/D transformation component 49, in the input control circuit 44 after the frequency translation.Control circuit 44 can be adjusted the control of level phse conversion portion 46 by the desirable AM-AM/PM characteristic of storing among the RAM48 and the output of A/D transformation component 49 are compared.At this moment the data rewriting among the RAM48 is become optimum data.
Like this, obtain the part of the high-frequency signal of secondary enlarging section 5 outputs by dispenser 51, by frequency mixer 50, A/D transformation component 49 high-frequency signal of obtaining is transformed into baseband signal, control device is according to this baseband signal, with the Data Update among the RAM48 of institute's reference is optimum value, even, also can constantly carry out Optimal Control, can obtain the effect of can implementation efficiency high high-frequency amplifier so the characteristic of secondary enlarging section 5 changes along with variations in temperature etc.In addition, because the data among remote transmission or the distance reception RAM48, so can also obtain from the effect of telemonitoring and control high-frequency amplifier.
In addition, the same with example 6, control circuit 44 can also be adjusted the bias condition of secondary enlarging section 5, can utilize secondary enlarging section 5 as the 4th amplitude phase adjusting apparatus.
In addition, in Figure 22,, also can be formed in the structures of distributing after the frequency-conversion circuit 39 though show in baseband processing circuitry 38 structure that the path with main enlarging section 4, secondary enlarging section 5 separates.
Example 14
Explanation is applied to situation in the feed-forward amplifier with the high-frequency amplifier shown in the example 1~13.
Figure 25 is the structure chart of the feed-forward amplifier of expression example 14 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 25, the 52nd, the input terminal of feed-forward amplifier, the 53rd, the dispenser that the high-frequency signal that is input in the input terminal 52 is distributed, the 54th, the main enlarging section of amplifying the feed-forward amplifier of the high-frequency signal that dispenser 53 distributes is the structure of the high-frequency amplifier of example 1.The 55th, will supply with time of delay the delay circuit of another high-frequency signal of distributing of dispenser 53, the 56th, the high-frequency signal of in the future autonomous enlarging section 54 and be distributed into two synthetic dispenser from the high-frequency signal of delay circuit 55 after synthetic.The 57th, the loop is extracted in the distortion of feed-forward amplifier out, is made of dispenser 53, main enlarging section 54, delay circuit 55, synthetic dispenser 56.
The 58th, will supply with the delay circuit of a high-frequency signal of synthetic dispenser 56 distribution time of delay, the 59th, the auxiliary enlarging section of amplifying another high-frequency signal of synthetic dispenser 56 distribution, the 60th, the synthetic portion that the output of the output of delay circuit 58 and auxiliary enlarging section 59 is synthesized, the 61st, the lead-out terminal of the feed-forward amplifier of the high-frequency signal that the synthetic portion of output 60 is synthetic.The 62nd, the loop is eliminated in the distortion of feed-forward amplifier, is made of delay circuit 58, auxiliary enlarging section 59, synthetic portion 60.
An output output of synthetic dispenser 56 is extracted the distortion component that extract out in loop 57 out by distortion, after amplifying in auxiliary enlarging section 59, is transfused in the synthetic portion 60.After another output signal of synthetic dispenser 56 has been passed through delay circuit 58, in synthetic portion 60, synthesize with the output signal of auxiliary enlarging section 59.The amplitude of distortion component that has at this moment passed through delay circuit 58 and the distortion component that has amplified in auxiliary enlarging section 59 is identical, phase place is opposite, carries out the distortion compensation of main enlarging section 54.
The mobile communicating base station needing low distortion ground to amplify under the situation of the big signal of peak power ratio, is used feed-forward amplifier with amplifier etc.Therefore use under the operating state that for example compensates more than the 10dB mostly the main enlarging section 54 that is arranged in the feed-forward amplifier.Be used for main enlarging section 54 by high-frequency amplifier, can realize constituting the effect of the little feed-forward amplifier of efficient height, distortion example 1.
In general, for the distortion of step-down amplifier, carrying out distortion compensation is effectively, but can not improve the value of the saturation power of amplifier.Therefore, can not compensate owing to amplifier saturated cuts the distortion that is taken place at the peak value of the envelope of the modulating wave described in the existing technology.
On the other hand, in the high-frequency amplifier of example 1 of the present invention,,, can realize not lowering efficiency and improve the high-frequency amplifier of saturation power from another viewpoint even can constitute the also high high-frequency amplifier of efficient under the big state of compensation.Therefore, the high-frequency amplifier with example 1 uses very effective as the main enlarging section 54 of feed-forward amplifier.Therefore, can obtain to constitute the effect of the littler feed-forward amplifier of efficient height, distortion.
In Figure 25, though used the high-frequency amplifier of example 1, not limit by this as the main enlarging section 54 of feed-forward amplifier, also can use the high-frequency amplifier in the example 2~13.
Example 15
Figure 26 is the structure chart of the high-frequency amplifier of expression example 15 of the present invention.The structure identical or suitable with Fig. 5 is marked with identical symbol.
In Figure 26, the 63rd, the input terminal of distortion compensation amplifier, the 64th, preposition distortion linear compensation circuit (distortion linear compensation circuit), the 65th, the enlarging section that the high-frequency amplifier of usefulness example 1 constitutes, the 66th, the lead-out terminal of distortion compensation amplifier.
The preposition distortion linear compensation circuit 64 that is arranged between input terminal 63 and the enlarging section 65 is to have the nonlinear linear compensation circuit opposite with the distorted characteristic of enlarging section 65.
From the high-frequency signal of input terminal 63 input by preposition distortion linear compensation circuit 64 supply with opposite non-linear after, supply with distorted characteristics by enlarging section 65, from lead-out terminal 66 outputs.Because the distorted characteristic of the non-linear and enlarging section 65 of preposition distortion linear compensation circuit 64 is cancelled each other, so on lead-out terminal 66, can obtain linear high-frequency signal.
Because the reason same with example 14, by with the high-frequency amplifier combination in preposition distortion linear compensation circuit 64 and the example 1~13, can the implementation efficiency height, the little distortion compensation amplifier of distortion.
Also can be arranged between enlarging section 65 and the lead-out terminal 66, replace preposition distortion linear compensation circuit 64 having the nonlinear main distortion linear compensation circuit (distortion linear compensation circuit) opposite with the distorted characteristic of enlarging section 65.
Example 16
In this example 16, the mensuration and the result thereof that carry out for the work effect of confirming high-frequency amplifier of the present invention are described.
Figure 27 is the structure chart of the high-frequency amplifier of expression example 16 of the present invention.Imagination example 1, the high-frequency amplifier among Figure 27 be special trial-production in order to present work effect of the present invention.
In Figure 27,1ex is the input terminal of input high-frequency signal, 71ex is the coupler of a part that takes out the power of the high-frequency signal that inputs to input terminal 1 in order to measure input power, 72ex is a power meter of measuring the power of the high-frequency signal that is taken out by coupler 71ex, 3ex is distributed into the high-frequency signal from input terminal 1ex two dispenser, is equivalent to the dispenser 3 shown in the example 1.
4ex is main enlarging section, is equivalent to the main enlarging section 4 shown in the example 1 (Fig. 5, Fig. 6).In main enlarging section 4ex, 73ex is the driving amplifier that constitutes the driver one-level of main enlarging section 4ex, and 7ex is that circuit is adjusted in the input of the FET of afterbody, and 8ex is the FET that constitutes the afterbody of main enlarging section 4ex, and 9ex is an output regulation circuit.
Output regulation circuit 9ex is made of manual variable tuning device, in order to measure the load impedance that can manually change FET8ex.
5ex is secondary enlarging section, is equivalent to the secondary enlarging section 5 shown in the example 1 (Fig. 5, Fig. 6).In secondary enlarging section 5ex, 74ex is the driving amplifier that constitutes the driver one-level of secondary enlarging section 5ex, and 10ex is that circuit is adjusted in the input of the FET of afterbody, and 11ex is the FET that constitutes the afterbody of secondary enlarging section 5ex, and 12ex is an output regulation circuit.
6ex is the circulator that the output of secondary enlarging section 5ex is injected the outlet side of main enlarging section 4ex, is equivalent to the circulator 6 shown in the example 1 (Fig. 5, Fig. 6).
In addition, 16ex, 17ex are arranged on variable attenuation portion between dispenser 3ex and the secondary enlarging section 4ex, variable phase shift portion respectively, be equivalent to the variable attenuation portion 16 shown in the example 4 (Fig. 9), variable phase shift portion 17 respectively, be used for adjusting amplitude, the phase place of 5ex path, secondary enlarging section one side respectively.75ex is a power meter, measures from the power of the high-frequency signal of circulator 6ex output.
The FET8ex of the afterbody of main enlarging section 4ex is the system MGFS36V of Mitsubishi Electric, and the FET11ex of the afterbody of secondary enlarging section 5ex is the system MGFS32V of Mitsubishi Electric, all is the general GaAsFET that microwave band is used.
In addition, driving amplifier 73ex, the 74ex of main enlarging section 4ex, secondary enlarging section 5ex adopt the system GaAsMMIC3 of Mitsubishi Electric level amplifier MGF7122A.This MMIC also is the general MMIC that the microwave band amplifier is used.
In addition, be the commercially available circulator of generally using as output regulation circuit 9ex, the circulator 6ex of manual variable tuning device as microwave circuit, can be from purchases such as MAURY マ イ Network ロ ウ エ イ Block company or TRAK マ イ Network ロ ウ エ イ Block companies.
The FET8ex of the afterbody of main enlarging section 4ex is biased into AB level (electric current during no signal is 280mA).On the other hand, the FET11ex of the afterbody of secondary enlarging section 5ex is biased into C level (electric current during no signal is 0mA).Mensuration below frequency has been carried out during for 1.9Ghz.
At first, do not make secondary enlarging section 5ex work, only make main enlarging section 4ex work, carried out the saturation power of the high-frequency amplifier among Figure 27 and the mensuration of efficient.In other words, be the mensuration that the problem of the affirmation high-frequency amplifier that carries out with existing technology is used, carried out respectively output regulation circuit 9ex with main enlarging section 4ex be fixed under the situation of saturation power increased load impedance conditions A (hereinafter to be referred as loading condition A) and the situation of the load impedance condition B (hereinafter to be referred as loading condition B) that efficient improves when being fixed on small-signal under mensuration.
Figure 28 is the result of this mensuration.Transverse axis is represented power output, and unit is dB, be with at this moment gain (unit is dB for the left side longitudinal axis, power output-input power) and efficient (the right side longitudinal axis, unit are %) curve change figure.
As can be seen from Figure 28, when the big loading condition A of saturation power, saturation power (power output that sharply descends with gain in Figure 28 is represented) has obtained 37.2dBm.When this loading condition A, power output hour, the efficient when for example power output is 30dBm (compensation 7.2dB) is 25%.
On the other hand, under the situation of the loading condition B of excellent in efficiency, efficient was 32% when power output was 30dBm when small-signal, but saturation power drops to 35.5dBm.That is, if saturation power is big loading condition A, decrease in efficiency during small-power then if be the loading condition B of excellent in efficiency during small-power, then can obtain to represent the result of the existing technical task of saturation power deficiency.
Secondly, the loading condition B of excellent in efficiency made the secondary enlarging section 5ex work that is biased into the C level when load impedance condition of output regulation circuit 9ex was fixed on small-power, measured.At this moment the high-frequency amplifier that just can be equivalent to invent.At this moment measurement result is shown among Figure 29.Identical with Figure 28, transverse axis is a power output, and (the left side longitudinal axis) and the efficient of will gaining (the right side longitudinal axis) is drawn as curve.Put down in writing the existing characteristic when secondary enlarging section 5ex is worked in the lump.
Power output is when 30dBm is following, and secondary enlarging section 5ex is cut-off state, and power output does not take place.Therefore do not make the existing situation of secondary enlarging section 5ex work and make the situation of the present invention of secondary enlarging section 5ex work present same characteristic.
And described in enforcement form 1, after power output surpassed 30dBm, secondary enlarging section 5ex was conducting state, at the output emergent power, is injected into the outlet side of main enlarging section 4ex via circulator 6ex.Because the effect of this injecting power, apparent power changes, and saturation power increases.
At this moment saturation power is 37.5dBm, when in a single day the saturation power shown in Figure 28 is the loading condition A of maximum, can obtain saturation power about equally.In addition, efficient shown in Figure 29 is the value that comprises the power consumption of secondary enlarging section 5ex.
Therefore, confirmed following effect: when realizing, for example be in the work of 30dBm, efficient can be brought up to 32% from 25% in power output with saturation power 37.5dBm that saturation power increased load condition (Figure 28 A) is equated and compensation work.
By above mensuration, clear and definite such excellent effect of the present invention: utilize the structure of the present invention of the circulator 6ex that has used the secondary enlarging section 5ex that is biased into the C level and outlet side, the efficient in the time of increasing saturation power and can improve small-power during compensation work.
More than, as purpose of the present invention, even illustrated that purpose is with the big high order harmonic component of high-power amplification peak power ratio also can constitute high efficiency high-frequency amplifier under the big state of compensation.; because the switching time of the load impedance of the structures shape of high-frequency amplifier of the present invention is very short; so self-evident, can adapt in the past the main purpose of (switching is arranged on the method for adjusting the switch in the circuit), promptly switch the high output mode of high-frequency amplifier and low output mode, under any circumstance can both realize the purpose of efficiency operation.
Be difficult to constitute in the past can in the output circuit of high-frequency amplifier, use have roughly enough voltage endurances, little switch and a variable element of loss, what there was efficient in the result improves the little problem of effect, but the circulator that uses among the present invention and 90 the degree hybrid circuits generally have enough voltage endurances and also lose little, so the result can constitute the high-frequency amplifier of working stability, excellent in efficiency.
The possibility of industrial utilization
As mentioned above, high-frequency amplifier of the present invention, feed-forward amplifier and distortion compensation amplifier Even under big compensation work state, also be suitable for realizing high efficiency High frequency amplification system.

Claims (87)

1. high-frequency amplifier, it is characterized in that: only under the big situation of the instantaneous power of the high-frequency signal of importing, above-mentioned high-frequency signal is distributed to secondary amplifying device and the constant main amplifying device that above-mentioned high-frequency signal is amplified work that amplifies work respectively, the above-mentioned high-frequency signal that above-mentioned secondary amplifying device is amplified injects the outlet side of above-mentioned main amplifying device, exports the above-mentioned high-frequency signal that above-mentioned main amplifying device amplifies.
2. a high-frequency amplifier is characterized in that having: distribute from first distributor of the high-frequency signal of input terminal input;
The main amplifying device of a kind of above-mentioned high-frequency signal that above-mentioned first distributor of constant amplification distributes;
Only under the big situation of the instantaneous power of above-mentioned high-frequency signal, amplify the secondary amplifying device of the another kind of high-frequency signal of above-mentioned first distributor distribution; And
The above-mentioned high-frequency signal that above-mentioned secondary amplifying device is amplified injects the outlet side of above-mentioned main amplifying device, exports the circulator of the above-mentioned high-frequency signal that above-mentioned main amplifying device amplifies simultaneously from lead-out terminal.
3. a high-frequency amplifier is characterized in that having: distribute from first distributor of the high-frequency signal of input terminal input;
Second distributor that distributes behind the phase difference that a kind of above-mentioned high-frequency signal subsidiary 90 that above-mentioned first distributor is distributed is spent;
The constant first main amplifying device and the second main amplifying device that amplifies the above-mentioned high-frequency signal of above-mentioned second distributor distribution respectively;
Only under the big situation of the instantaneous power of above-mentioned high-frequency signal, amplify the secondary amplifying device of the another kind of above-mentioned high-frequency signal of above-mentioned first distributor distribution; And
The above-mentioned high-frequency signal that above-mentioned secondary amplifying device is amplified injects the outlet side of the above-mentioned first main amplifying device and the outlet side of the above-mentioned second main amplifying device respectively, after the above-mentioned high-frequency signal that simultaneously the above-mentioned first main amplifying device and the above-mentioned second main amplifying device has been amplified respectively is synthetic, from the one 90 degree hybrid circuit of lead-out terminal output.
4. high-frequency amplifier according to claim 2 is characterized in that: have adjustment by the amplitude of the high-frequency signal of secondary amplifying device and the first amplitude phase adjusting apparatus of phase place.
5. high-frequency amplifier according to claim 3 is characterized in that: have adjustment by the amplitude of the high-frequency signal of secondary amplifying device and the first amplitude phase adjusting apparatus of phase place.
6. high-frequency amplifier according to claim 2 is characterized in that: have and will supply with high-frequency signal that passes through main amplifying device or the deferred mount that passes through the high-frequency signal of secondary amplifying device time of delay.
7. high-frequency amplifier according to claim 3 is characterized in that: have and will supply with high-frequency signal that passes through main amplifying device or the deferred mount that passes through the high-frequency signal of secondary amplifying device time of delay.
8. high-frequency amplifier according to claim 2 is characterized in that: have the frequency equalizer that the frequency characteristic of the high-frequency signal that makes by main amplifying device or the high-frequency signal by secondary amplifying device changes.
9. high-frequency amplifier according to claim 3 is characterized in that: have the frequency equalizer that the frequency characteristic of the high-frequency signal that makes by main amplifying device or the high-frequency signal by secondary amplifying device changes.
10. high-frequency amplifier according to claim 2, it is characterized in that: have instantaneous power variation corresponding to the high-frequency signal of the secondary amplifying device of input, adjustment changes and passes through the AM-AM/PM adjusting device of phase characteristic from the instantaneous power of the above-mentioned high-frequency signal of above-mentioned secondary amplifying device output
11. high-frequency amplifier according to claim 3, it is characterized in that: have instantaneous power variation corresponding to the high-frequency signal of the secondary amplifying device of input, adjustment changes and passes through the AM-AM/PM adjusting device of phase characteristic from the instantaneous power of the above-mentioned high-frequency signal of above-mentioned secondary amplifying device output
12. high-frequency amplifier according to claim 10 is characterized in that the AM-AM/PM adjusting device has:
Be connected in series in two capacitors between AM-AM/PM adjusting device input terminal and the AM-AM/PM adjusting device lead-out terminal;
With between above-mentioned two capacitors and the diode that couples together; And
Connect dc bias power between above-mentioned two capacitors by bias voltage with resistance.
13. high-frequency amplifier according to claim 11 is characterized in that the AM-AM/PM adjusting device has:
Be connected in series in two capacitors between AM-AM/PM adjusting device input terminal and the AM-AM/PM adjusting device lead-out terminal;
With between above-mentioned two capacitors and the diode that couples together; And
Connect dc bias power between above-mentioned two capacitors by bias voltage with resistance.
14. high-frequency amplifier according to claim 10 is characterized in that the AM-AM/PM adjusting device has:
The 3rd distributor that distributes the part of high-frequency signal;
Detect first amplitude detecting device of the amplitude of the high-frequency signal that above-mentioned the 3rd distributor distributes;
The amplitude of above-mentioned high-frequency signal of above-mentioned the 3rd distributor and the second amplitude phase adjusting apparatus of phase place have been passed through in adjustment; And
The amplitude of the above-mentioned high-frequency signal that detects with reference to above-mentioned first amplitude detecting device is controlled the control device of the above-mentioned second amplitude phase adjusting apparatus.
15. high-frequency amplifier according to claim 11 is characterized in that the AM-AM/PM adjusting device has:
The 3rd distributor that distributes the part of high-frequency signal;
Detect first amplitude detecting device of the amplitude of the above-mentioned high-frequency signal that above-mentioned the 3rd distributor distributes;
The amplitude of above-mentioned high-frequency signal of above-mentioned the 3rd distributor and the second amplitude phase adjusting apparatus of phase place have been passed through in adjustment; And
The amplitude of the high-frequency signal that detects with reference to above-mentioned first amplitude detecting device is controlled the control device of the above-mentioned second amplitude phase adjusting apparatus.
16. high-frequency amplifier according to claim 2 is characterized in that having: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components;
Adjust the amplitude of the above-mentioned higher harmonic components that above-mentioned separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And
Be arranged between above-mentioned separator and the circulator or above-mentioned separator and the one 90 degree hybrid circuit between, the synthesizer that synthesizes of the above-mentioned higher harmonic components of above-mentioned fundametal compoment that above-mentioned separator is separated and above-mentioned the 3rd amplitude phase adjusting apparatus adjustment.
17. high-frequency amplifier according to claim 3 is characterized in that having: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components;
Adjust the amplitude of the above-mentioned higher harmonic components that above-mentioned separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And
Be arranged between above-mentioned separator and the circulator or above-mentioned separator and the one 90 degree hybrid circuit between, the synthesizer that synthesizes of the above-mentioned higher harmonic components of above-mentioned fundametal compoment that above-mentioned separator is separated and above-mentioned the 3rd amplitude phase adjusting apparatus adjustment.
18. high-frequency amplifier according to claim 2 is characterized in that having: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and the separator of higher harmonic components;
Adjust the amplitude of the above-mentioned higher harmonic components that above-mentioned separator separates and the 3rd amplitude phase adjusting apparatus of phase place; And
The synthesizer that the above-mentioned fundametal compoment that is arranged between circulator and the above-mentioned secondary amplifying device, above-mentioned separator is separated and the above-mentioned higher harmonic components of above-mentioned the 3rd amplitude phase adjusting apparatus adjustment are synthesized.
19. high-frequency amplifier according to claim 3 is characterized in that having: separate the fundametal compoment of the high-frequency signal that secondary amplifying device amplifies and higher harmonic components, fundametal compoment exported to the separator of the one 90 degree hybrid circuit;
Adjust the amplitude of the above-mentioned higher harmonic components that above-mentioned separator separates and the 3rd amplitude phase adjusting apparatus of phase place;
The above-mentioned higher harmonic components of above-mentioned the 3rd amplitude phase adjusting apparatus adjustment is distributed into two the 2 90 degree hybrid circuit;
Be arranged between above-mentioned the one 90 degree hybrid circuit and the first main amplifying device, to from a kind of above-mentioned higher harmonic components of above-mentioned the 2 90 degree hybrid circuit with passed through first synthesizer that the above-mentioned fundametal compoment of above-mentioned the one 90 degree hybrid circuit is synthesized; And
Be arranged between above-mentioned the one 90 degree hybrid circuit and the above-mentioned second main amplifying device, to from the another kind of above-mentioned higher harmonic components of above-mentioned the 2 90 degree hybrid circuit with passed through second synthesizer that the above-mentioned fundametal compoment of above-mentioned the one 90 degree hybrid circuit is synthesized.
20. high-frequency amplifier according to claim 2 is characterized in that: have be arranged between circulator and the lead-out terminal or the one 90 degree hybrid circuit and lead-out terminal between, make from the high-frequency signal of circulator or above-mentioned the one 90 degree hybrid circuit isolator by lead-out terminal.
21. high-frequency amplifier according to claim 3 is characterized in that: have be arranged between circulator and the lead-out terminal or the one 90 degree hybrid circuit and lead-out terminal between, make from the high-frequency signal of circulator or above-mentioned the one 90 degree hybrid circuit isolator by lead-out terminal.
22. high-frequency amplifier according to claim 2 is characterized in that: have and be arranged between secondary amplifying device and the circulator, make high-frequency signal that above-mentioned secondary amplifying device amplified isolator by above-mentioned circulator.
23. high-frequency amplifier according to claim 3 is characterized in that: have and be arranged between secondary amplifying device and the one 90 degree hybrid circuit, make high-frequency signal that above-mentioned secondary amplifying device amplified isolator by above-mentioned the one 90 degree hybrid circuit.
24. high-frequency amplifier according to claim 2 is characterized in that having: handle from the base band processing device of the baseband signal of input terminal input; And
The above-mentioned baseband signal of above-mentioned base band processing device processing is transformed into the first frequency converting means of the high-frequency signal of importing main amplifying device and secondary amplifying device respectively.
25. high-frequency amplifier according to claim 3 is characterized in that having: handle from the base band processing device of the baseband signal of input terminal input; And
The above-mentioned baseband signal of above-mentioned base band processing device processing is transformed into the first frequency converting means of the high-frequency signal of importing main amplifying device and secondary amplifying device respectively.
26. high-frequency amplifier according to claim 24 is characterized in that base band processing device has:
To be distributed into two the 4th distributor from the baseband signal of input terminal input;
Detect second amplitude detecting device of the amplitude of a kind of above-mentioned baseband signal that above-mentioned the 4th distributor distributes;
Adjustment is from the 4th amplitude phase adjusting apparatus of the amplitude of the above-mentioned baseband signal of above-mentioned second amplitude detecting device; And
The amplitude and the pre-prepd data of the above-mentioned baseband signal that detects with reference to above-mentioned second amplitude detecting device are controlled the control device of above-mentioned the 4th amplitude phase adjusting apparatus.
27. high-frequency amplifier according to claim 25 is characterized in that base band processing device has:
To be distributed into two the 4th distributor from the baseband signal of input terminal input;
Detect second amplitude detecting device of the amplitude of a kind of above-mentioned baseband signal that above-mentioned the 4th distributor distributes;
Adjustment is from the 4th amplitude phase adjusting apparatus of the amplitude of the above-mentioned baseband signal of above-mentioned second amplitude detecting device; And
The amplitude and the pre-prepd data of the above-mentioned baseband signal that detects with reference to above-mentioned second amplitude detecting device are controlled the control device of above-mentioned the 4th amplitude phase adjusting apparatus.
28. high-frequency amplifier according to claim 26 is characterized in that having: the 5th distributor that distributes the high-frequency signal of secondary amplifying device output; And
The signal transformation that above-mentioned the 5th distributor is distributed becomes the second frequency converting means of baseband signal,
Control device upgrades pre-prepd data with reference to the above-mentioned baseband signal of above-mentioned second frequency converting means conversion.
29. high-frequency amplifier according to claim 26 is characterized in that having: the 5th distributor that distributes the high-frequency signal of secondary amplifying device output; And
The signal transformation that above-mentioned the 5th distributor is distributed becomes the second frequency converting means of baseband signal,
Control device upgrades pre-prepd data with reference to the above-mentioned baseband signal of above-mentioned second frequency converting means conversion.
30. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 1.
31. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 2.
32. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 3.
33. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 4.
34. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 5.
35. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 6.
36. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 7.
37. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 8.
38. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 9.
39. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 10.
40. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 11.
41. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 12.
42. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 13.
43. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 14.
44. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 15.
45. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 16.
46. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 17.
47. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 18.
48. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 19.
49. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 20.
50. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 21.
51. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 22.
52. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 23.
53. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 24.
54. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 25.
55. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 26.
56. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 27.
57. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 28.
58. feed-forward amplifier, have extraction from the distortion elimination loop that the distortion of the distortion of the high-frequency signal of input terminal input is extracted the loop out and extracted the distortion of the distortion correction high-frequency signal of extracting out in the loop with above-mentioned distortion out, this feed-forward amplifier is characterised in that:
In distortion extraction loop, have the described high-frequency amplifier of claim 29.
59. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 1; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
60. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 2; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
61. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 3; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
62. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 4; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
63. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 5; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
64. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 6; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
65. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 7; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
66. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 8; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
67. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 9; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
68. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 10; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
69. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 11; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
70. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 12; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
71. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 13; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
72. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 14; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
73. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 15; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
74. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 16; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
75. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 17; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
76. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 18; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
77. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 19; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
78. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 20; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
79. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 21; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
80. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 22; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
81. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 23; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
82. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 24; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
83. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 25; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
84. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 26; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
85. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 27; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
86. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 28; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
87. a distortion compensation amplifier is characterized in that having: the described high-frequency amplifier of claim 29; And the distortion linear compensation circuit that compensates the distorted characteristic that above-mentioned high-frequency amplifier supplies with to high-frequency signal.
CNB01802680XA 2000-09-05 2001-08-30 High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier Expired - Fee Related CN100426664C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP269077/00 2000-09-05
JP2000269077A JP4786021B2 (en) 2000-09-05 2000-09-05 High frequency amplifier, feed forward amplifier and distortion compensation amplifier

Publications (2)

Publication Number Publication Date
CN1389016A true CN1389016A (en) 2003-01-01
CN100426664C CN100426664C (en) 2008-10-15

Family

ID=18755753

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB01802680XA Expired - Fee Related CN100426664C (en) 2000-09-05 2001-08-30 High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier

Country Status (8)

Country Link
US (1) US6894562B2 (en)
EP (1) EP1317063B1 (en)
JP (1) JP4786021B2 (en)
KR (1) KR100597157B1 (en)
CN (1) CN100426664C (en)
CA (1) CA2389303C (en)
DE (1) DE60131861D1 (en)
WO (1) WO2002021685A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388623C (en) * 2003-07-15 2008-05-14 福州大学 Parallel distortion signal generator and power amplifier applied circuit thereof
CN104682890A (en) * 2013-11-26 2015-06-03 台扬科技股份有限公司 Radio frequency signal amplifying system
CN109391243A (en) * 2017-08-08 2019-02-26 罗德施瓦兹两合股份有限公司 Amplifier circuit and method

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI115935B (en) * 2003-02-25 2005-08-15 Nokia Corp Method and apparatus for regulating amplifier characteristics
US7038539B2 (en) * 2003-05-06 2006-05-02 Powerwave Technologies, Inc. RF amplifier employing active load linearization
US7062234B2 (en) 2003-07-28 2006-06-13 Andrew Corporation Pre-distortion cross-cancellation for linearizing power amplifiers
US20050134377A1 (en) * 2003-12-23 2005-06-23 Dent Paul W. Doherty amplifier
US7339426B2 (en) * 2004-03-19 2008-03-04 Powerwave Technologies, Inc. High efficiency linear amplifier employing dynamically controlled back off
US7440733B2 (en) 2004-04-09 2008-10-21 Powerwave Technologies, Inc. Constant gain nonlinear envelope tracking high efficiency linear amplifier
US20060017509A1 (en) * 2004-07-21 2006-01-26 Veitschegger William K Auxiliary transistor gate bias control system and method
US20060017607A1 (en) * 2004-07-26 2006-01-26 Kyocera Corporation Amplitude modulator, selector switch, high frequency transmitting/receiving apparatus including the same, and radar apparatus, and radar apparatus-mounting vehicle and radar apparatus-mounting small ship
US7295065B2 (en) * 2004-11-18 2007-11-13 Beecem Communications Inc. High efficiency doherty amplifier with a segmented main amplifier
US7180372B2 (en) * 2004-12-07 2007-02-20 Stmicroelectronics, Inc. High frequency amplifier
US7868700B2 (en) * 2005-11-28 2011-01-11 Paragon Communications Ltd. Method and apparatus for reducing current consumption of MIMO systems
JP2007329830A (en) * 2006-06-09 2007-12-20 Kyocera Corp Power amplifier, communication apparatus, and method for adjusting power amplifier
US20090111405A1 (en) * 2007-10-30 2009-04-30 Huang Chung-Er Signal matching module for single or multiple systems
JP5052366B2 (en) * 2008-02-20 2012-10-17 株式会社エヌ・ティ・ティ・ドコモ Control method for high-efficiency feedforward amplifier
US8416018B2 (en) 2008-11-10 2013-04-09 Mitsubishi Electric Corporation Variable frequency amplifier
US8233851B2 (en) * 2010-02-03 2012-07-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method and apparatus for providing impedance matching for high-frequency signal transmitter
JP5556643B2 (en) * 2010-12-17 2014-07-23 富士通株式会社 Amplifying device and distortion compensation method
US9876478B2 (en) * 2011-11-04 2018-01-23 Skyworks Solutions, Inc. Apparatus and methods for wide local area network power amplifiers
WO2013067031A2 (en) 2011-11-04 2013-05-10 Skyworks Solutions, Inc. Apparatus and methods for power amplifiers
US8670732B2 (en) 2011-11-11 2014-03-11 Hbc Solutions, Inc. Broadband amplifier system using a 3dB quadrature combiner to dynamically modulate load impedance
US9467940B2 (en) 2011-11-11 2016-10-11 Skyworks Solutions, Inc. Flip-chip linear power amplifier with high power added efficiency
KR101952875B1 (en) * 2017-08-24 2019-05-23 삼성전기주식회사 Power amplifier and integrated circuit comprising the same
WO2019119436A1 (en) 2017-12-22 2019-06-27 华为技术有限公司 Signal processing circuit, radio frequency signal transmitter, and communication device
KR102056915B1 (en) * 2018-03-19 2020-01-22 주식회사 유텔 Pulsed power amplifier
EP4128529A4 (en) * 2020-03-23 2024-01-03 Ericsson Telefon Ab L M Amplifier circuits and methods of operating an amplifier circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL50477C (en) * 1936-03-03
JPS5291632A (en) * 1976-01-29 1977-08-02 Toshiba Corp Amplifier
JPS5840908A (en) * 1981-09-03 1983-03-10 Toshiba Corp Amplifying device
JPS61258513A (en) * 1985-05-13 1986-11-15 Nec Corp Linearity compensation circuit
JPS62289004A (en) 1986-06-09 1987-12-15 Toyo Commun Equip Co Ltd Output variable high frequency power amplifier
US4985686A (en) * 1989-12-04 1991-01-15 Motorola, Inc. Active load impedance control system for radio frequency power amplifiers
JP3058720B2 (en) 1991-06-21 2000-07-04 オリンパス光学工業株式会社 Image forming device
JPH0511527U (en) * 1991-07-25 1993-02-12 三菱電機株式会社 Booster amplifier
JPH071622U (en) * 1993-05-31 1995-01-10 日本放送協会 Class B power amplifier
JP2522201B2 (en) * 1994-06-24 1996-08-07 日本電気株式会社 Phase control circuit for power synthesis
JPH09284061A (en) 1996-04-17 1997-10-31 Sony Corp Power amplifier device
JPH1141118A (en) 1997-07-15 1999-02-12 Matsushita Electric Ind Co Ltd Transmitter
IL121666A (en) 1997-08-31 2001-03-19 Bronfeld Joshua Electronic dice

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388623C (en) * 2003-07-15 2008-05-14 福州大学 Parallel distortion signal generator and power amplifier applied circuit thereof
CN104682890A (en) * 2013-11-26 2015-06-03 台扬科技股份有限公司 Radio frequency signal amplifying system
CN104682890B (en) * 2013-11-26 2018-01-30 台扬科技股份有限公司 Radiofrequency signal amplification system
CN109391243A (en) * 2017-08-08 2019-02-26 罗德施瓦兹两合股份有限公司 Amplifier circuit and method
CN109391243B (en) * 2017-08-08 2023-12-22 罗德施瓦兹两合股份有限公司 Amplifier circuit and method

Also Published As

Publication number Publication date
JP2002076781A (en) 2002-03-15
KR20020067513A (en) 2002-08-22
WO2002021685A1 (en) 2002-03-14
DE60131861D1 (en) 2008-01-24
EP1317063B1 (en) 2007-12-12
JP4786021B2 (en) 2011-10-05
EP1317063A1 (en) 2003-06-04
KR100597157B1 (en) 2006-07-05
US20020171477A1 (en) 2002-11-21
CN100426664C (en) 2008-10-15
EP1317063A4 (en) 2005-08-17
US6894562B2 (en) 2005-05-17
CA2389303A1 (en) 2002-03-14
CA2389303C (en) 2005-12-06

Similar Documents

Publication Publication Date Title
CN1389016A (en) High-frequency amplifier, feed-forward amplifier and distortion compensation amplifier
CN1578114A (en) Modulation circuit device, modulation method and radio communication device
CN1081850C (en) Power amplifier and communication device
CN1292533C (en) Balance high frequency device, method for improving balance characteristic and balance high frequency circuit using the device
CN1515104A (en) High-frequency signal receiver and method of mfg. same
CN1467919A (en) Transmitting circuit device and wireless communications device
CN1214670C (en) Amplifier with distortion compensator and radio communication base station
CN1508982A (en) Wireless communication apparatus, wireless communication method, antenna apparatus and first duplexer
CN1311644C (en) Transceiver able to generate series resonance with parasitic capacitance
CN1551489A (en) Variable impedance circuit, amplifier, multiplier, high-frequency circuit using same
CN1420626A (en) Power amplifier, power amplifying method and radio communication device
CN1284304C (en) Variable gain amplifier and radio communication device
CN1210863C (en) N-port direct receiver
CN1707941A (en) Multistage amplifying devices, and reception device and transmission device using the same
CN1610251A (en) High frequency power amplifier circuit and electronic component for high frequency power amplifier
CN1977446A (en) Bidirectional frequency converter and radio equipment using same
CN1397106A (en) High-frequency amplifier and high-frequency mixer
CN1879328A (en) Optical-wireless fusion communication system and optical-wireless fusion communication method
CN1695335A (en) Transmitter
CN1447539A (en) Two-Way light transmission system and station and sub-station used thereof
CN1409497A (en) Distortion compensation device
CN1497839A (en) Class D amplifier
CN1503462A (en) Three-phase mixer circuit and high frequency signal receiver using the same
CN1665133A (en) Transmitting circuit, communication equipment, audio equipment, video equipment, and transmitting method
CN1771668A (en) Information processing terminal system and transmission/reception method using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081015

Termination date: 20140830

EXPY Termination of patent right or utility model