CN1384970A - Organic light emitting diode having spheircal shaped patterns - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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Abstract
A approach is provided for increasing the emission intensity of an organic light emitting diode (OLED) and the total external emission efficiency for an OLED at a normal viewing angle. With the approach of the invention, the intensity and efficiency have been increased by factors of 9.6 and 3.0 respectively by applying spherically shaped patterns to the back of the device substrate. The inventive approach captures light previously lost to wave-guiding in the substrate and, with proper choice of substrate, light previously lost to wave-guiding in the organ/anode layers.
Description
Background technology of the present invention
Related application
The present invention relates to application number is 60/162,552, the applying date is on October 29th, 1999, the U.S. Provisional Application that is entitled as " output couple efficiency of Organic Light Emitting Diode being improved " by the back substrate figure, and the priority of this application is enjoyed in request, this provisional application transfers the applicant, herein can be in conjunction with reference.
Invention field
The present invention relates to the light-emitting device field, relate in particular to organic light emitting apparatus (OLEDs) and emission effciency thereof.
Prior art
Mass data be downloaded and be browsed to access internet also need with more and more faster speed, and to the frequent requirement of portable and little footprint, make people express more requirements to the capacity of display unit.To require selected display unit be flat-panel monitor for this, but the employed lcd technologies of most of now flat-panel monitors (LCD) are subjected to its performance limitations to be difficult to meet the requirement of increase.New Display Technique provides the huge prospect that overcomes the LCD technical limitation.This new technology is based on the application of Organic Light Emitting Diode (OLEDs), and this diode has used electroluminescent thin-film material.
Typical Organic Light Emitting Diode comprises: the lamination (t of plate glass substrate
Sub～1mm, n
Sub=1.51) a, indium tin oxide layer (ITO) (t
ITO～100nm, n
ITO～1.8), one or more organic layer (t
Org～0.1nm, n
Org=1.6-1.8) and a reflective cathode (for example Mg: Ag or Li: Al), t represents bed thickness herein, and n represents this layer refractive index.For the sake of simplicity, the discussion is here carried out based on an organic layer, and luminescence phenomenon appears on this layer.But those skilled in the art are readily appreciated that following discussion and analyze and also can be applied at an easy rate more on the complicated apparatus structure.
An important performance indexes of display system is that intake converts radiative efficient to.In organic light emitting diode display, determine that a deciding factor of system effectiveness is coupling efficiency (η
Ext), the inner light that produces is coupled in the device outside with this coupling efficiency.For satisfying the demand for development of following display system, need to improve the coupling efficiency of Organic Light Emitting Diode.
Purpose of the present invention and summary
Therefore, an object of the present invention is to improve the coupling efficiency of Organic Light Emitting Diode.For reaching this purpose, the invention provides a kind of method that improves the Organic Light Emitting Diode emissive porwer and under normal visual angle, improve the whole external emission efficient that is used for Organic Light Emitting Diode.Use method of the present invention, by spheircal shaped patterns being applied to the device substrate backside, emissive porwer and emission effciency have been enhanced 9.6 and 3.0 coefficients respectively.The inventive method is caught the light that is before lost by waveguide in substrate, and by selecting suitable substrate, also catch previous in organic/anode layer by light that waveguide lost.The method according to this invention, a kind of surperficial building method is provided, it is compared with the device of making on typical flat glass sheet substrate, when using glass substrate, the emission effciency of Organic Light Emitting Diode doubles at least, when using the high index plastic substrate, the emission effciency of Organic Light Emitting Diode increases by two times at least.
Brief description of drawings
Fig. 1 has shown the ray diagram of different optical paths in the dull and stereotyped Organic Light Emitting Diode;
Fig. 2 A and 2B provide the schematic diagram of the light emission effciency of use ball curved surface characteristic according to the present invention to improve Organic Light Emitting Diode;
Fig. 3 A has shown the far-field intensity distribution figure of measured plate glass substrate and desired lambertian emitter curve;
Fig. 3 B has shown the experimental result of using or do not use the glass substrate device of ball curved surface characteristic according to the present invention;
Fig. 3 C has shown the experimental result of the PC substrate of using or do not use ball curved surface characteristic according to the present invention and the experimental result of plate glass substrate.
Detailed description of the present invention
A kind of new method has been described to increase substantially the emission effciency of Organic Light Emitting Diode herein.In the method, at first propose one and resolve notion so that a kind of valuable tool using to be provided, compare with the raising of description emission effciency of the present invention and with the result of prior art.By this suitable parsing notion, of the present invention the method that is used to obtain improved Organic Light Emitting Diode emission effciency described.Finally, the inventor realized improving emission effciency of the present invention method a plurality of embodiment and these embodiment are described.
As described in the background section, the coupling efficiency (η of Organic Light Emitting Diode
Ext) in the determining of organic light emitting diode display emission effciency, be a deciding factor.By considering the refractive index relevant, analyze the η of the hierarchy pattern of using in the Organic Light Emitting Diode with each layer
ExtBe very simple.As the prophesy of this analysis, study the ray diagram of dull and stereotyped Organic Light Emitting Diode shown in Figure 1, proved the loss that substrate layer (light II) and the interior light of organic/anode layer (light III) are held back.By among the figure shown in the light I, only the light with suitable emitted at small angles can transmit.
Because the substrate refractive index (is n less than the organic layer refractive index
Subs＜n
Org), so can obtain by sin
-1(n
Subs/ n
Org) the critical angle θ that limited
Orgc2, wherein in the organic layer with greater than θ
Orgc2The light of angular emission in ITO and organic layer by waveguide.The light emission path is described as light III in Fig. 1.Equally, because n
Glass＜n
SubsSo, also can obtain by sin
-1(n
Air/ n
Org) the critical angle θ that limited
Orgc1, wherein in organic layer with greater than θ
Orgc1The light of angular emission in substrate by waveguide, shown in light II among Fig. 1.Because only with less than θ
Orgc2The light of angular emission penetrates from device, and shown in light I among Fig. 1, all have in fact all lost through the light that waveguide keeps, and show η
ExtMinimizing.Use ray optics, supposing provides radiating light and emission in heterogeneity in organic layer from point source, and transmission coefficient is T, and it is at θ＜θ
Orgc1The time be 1, be 0 on the contrary, thereby can calculate η
ExtAnd η
Subs, the latter represents in the substrate by the emission light part of waveguide.
η
subs＝cosθ
orgc1-cosθ
orgc2 (2)
[referring to N.C.Greenham, R.H.Friend, and D.D.C.Bradley, " angle of departure relation of conjugated polymer light-emitting diode: the relation that is used for efficiency calculation ", Adv.Mat.6,491 (1994)]
In addition, under the same assumed conditions, outside light distribution is presented:
[referring to G.Gu, D.Z.Garbuzov, P.E.Burrows, S.Venkatesh, and S.R.Forrest " the high external quantum efficiency of organic light emitting apparatus ", Opt.Lett.22,396 (1997)]
It is similar to the intensity cosine curve of lambertian emitter.(note that above-mentioned formula and model all ignored the known complicated microscopic pores effect of model that makes, but do not change method described herein and result's qualitative effect.)
Note T=1, θ＜θ
Orgc1Supposition represent a kind of simplification.Particularly, it represents the upper limit of desired emissive porwer.If use the expression formula of T (θ), this expression formula limits by use fresnel formula on each interface, can obtain the lower limit (ignoring the microscopic pores effect) of emissive porwer.But this simplification is considered to provide an approximation.At T=1, θ＜θ
Orgc1In the formula under the situation (1), the determining of the represented factor of (2) and formula (3), suppose with all interior lights of these angle reflections in the dark and finally all launch, and suppose that in second kind of situation (lower limit) the neither one internal reflected light is readmitted.Resulting in both cases I
Ext(θ
Ff) the result, the cosine result who obtains together with the Fresnel reflector is marked in Fig. 3 A, and obtains the experimental result of the Organic Light Emitting Diode that obtains on the plate glass substrate simultaneously.Difference between two kinds of refraction patterns (be R=1, represent the finally all transmissions of all reverberation, R=0 represents that all reverberation all lose) is very little, thereby can effectively use any supposition usually.Because the expression formula that obtains under the T=1 supposition is simpler, so the expression formula when this specification hereinafter uses T=1.
Because the ranges of indices of refraction of desired organic layer is between 1.6 and 1.8, corresponding as can be seen coupling efficiency η from formula (1)
ExtScope between 0.20 and 0.15, this proof coupling efficiency in the system effectiveness that reduces importance--promptly the 80-85% of the light of inner generation is trapped in device.Be wound with OLED etched recesses in glass and hold back direction of light, make coupled outside efficient improve 1.9 ± 0.2 coefficients [referring to G.Gu, etc., the same] to change in substrate and the organic layer/ITO layer.This method also is not suitable for the manufacturing of device layer, and in the device layer, the metal wire and/or the circuit that are used for passive or driven with active matrix device must pass deep trouth.This method also has unfavorable factor, promptly needs the non-perpendicular curved surface in fabulous etching control and the substrate, has greatly strengthened the complexity that substrate is made.
The method according to this invention, a solution of holding back problem and provide for light is to be patterned into sphere at the substrate dorsal part, makes spherical being centered close on the light source.Most of illumination is mapped on air-substrate interface, and the light loss that is caused by waveguide sharply reduces.This spheircal shaped patterns of substrate is schematically described in Fig. 2.
Referring to accompanying drawing, sphere is fixed to the substrate rear portion, or substrate is configured as sphere shown in Fig. 2 A, allow light to penetrate from substrate with wide-angle more.The θ of maximum angle from board device of light directive outside
Orgc1Increase to the θ in the patterning apparatus of back of the present invention
Max=tan
-1(ρ
Lens/ t
Subs) (shown in Fig. 2 A).Reaching this degree is θ
MaxDetermined by actual graphical and can be made when bigger that outer coupling efficiency is enhanced η
Ext=1-cos θ
Max(obtaining) by the upper limit of integral that changes formula (1).The spherical center of curvature does not have direct corresponding Organic Light Emitting Diode setting, because refraction effect can not further be coordinated the far field mould, because light can not penetrate lens/air interface when common incident.Other method of breaking substrate rear surface flatness also can obtain inner body reflection still less, and has therefore improved external efficiencies.
The applicant has shown a plurality of embodiments of the invention that are used for below, and these embodiment have realized and worked out experimental result.Realize that the required different parameters of embodiment is set forth in table 1 below.Three available parameters shown in the table 1 can be understood better in conjunction with Fig. 2.First parameter that obtains is substrate coefficient (n
Subs), can determine θ fully by it
Orgc1And θ
Orgc2, and can determine η fully
ExtAnd η
Subsn
SubsAlso determined the strength distribution curve of substrate layer inboard, this curve n
SubsReplace the n in the formula (3)
AirObtain.[referring to G.Gu, etc., the same]
I
Subs(θ
Subs) more important, because the external intensity that formula (3) has only been described when substrate is flat board distributes.If substrate is configured as hemisphere, wherein device is positioned at its center, then I
Ext(θ
Ff) will equal I
Subs(θ
Subs).In fact, in all situations except the flat plate substrate special case, I
Subs(θ
Subs) at definite I
Ext(θ
Ff) time directly works.Continue n
SubsTo I
SubsEffect be to work as n
SubsMaking during increase distributes concentrates, until n
Subs=n
Org, at this I
Subs(θ
Subs) reproduce the intensity distributions occur in the homogeneous in the organic layer at first.
Resulting second parameter is to assemble the maximum angular (θ of the light that enters (in the substrate) lens
Subs, max).This parameter is by whole substrate thickness (t
Subs) and lens radius (ρ
Lens) through expression formula θ
Subs=tan
-1(ρ
Lens/ t
Subs) obtain.Suppose θ
Subs, maxEnough big (is θ to catch all light that transmit substrate without lens
Subs, max＞sin
-1(n
Air/ n
Subs)), all are with greater than θ so
Subs, maxThe light that sends of angle will be by waveguide and loss in substrate.According to the same analysis of derived expression (1), to θ
Subs, maxSame supposition under, can obtain being centered close to the expression formula of the outer coupling efficiency of spherical on-chip Organic Light Emitting Diode now.
Be proof θ
Subs, maxImportance, think if θ
Subs, max=76 ° (is ρ
Lens=4t
Subs) and n
Subs=n
Org, substrate is gone in the transmittance of 14 ° of expressions 24% of decomposing so.
The 3rd and last parameter that obtains are the distance (d of device from the skew of lens curvature central vertical
Offset).This parameter is why important to be because its influences far-field distribution pattern strongly.Work as d
Offset≠ 0 o'clock, I
ExtAnalytical expression be very easy to find in the prior art.The intention of discussing is to point out effectively (d when Organic Light Emitting Diode is provided with too away from lens
Offset＞0), I
ExtTo compare I
SubsMore concentrated, (d when Organic Light Emitting Diode is provided with too closely apart from lens
Offset＜0), I
ExtCompare I
SubsDisperse.But, for deviant in a big way, because | d
Offset|＞0, about η
ExtThe one less effect that reduces is only arranged.
Note and be used for limiting Fig. 2 A far-field angle θ
FfLight drawn under the situation of d=0, and in the drawings, the offset d between lens curvature center and the Organic Light Emitting Diode is drawn into non-zero, thus it can clearly be discerned.Note also that plastic lens array is laminated to the sphere feature that is had on the planar substrates and is described specially in Fig. 2 B.
Though use basic substrate face design before noticing in traditional light-emitting diode, said method before be not used in the improvement of Organic Light Emitting Diode output coupling.In addition, this Organic Light Emitting Diode method is not implied by the light-emitting diode application.Simultaneously note that also the high refractive index of being found (for example n＞4) has hindered the advantage that people can obtain from Organic Light Emitting Diode in the emissive material of traditional light-emitting diode.Particularly, except the structure substrate shape, by substrate coefficient and emissive material coefficient are complementary, all coupled outside loss in possible the cancellation element, (the transparent substrate material that is n～1.6-1.8) also is easy to acquisition in the suitable coefficient scope.
At method of the present invention, the inventor has made a plurality of embodiment, and they will be described hereinafter.Organic Light Emitting Diode among these embodiment is manufactured on glass and Merlon (PC) substrate.The glass substrate of being made up of 0.7mm and the thick soda-lime glass of 1.1mm is coated with from the buying of Applied Films CO. company and by the producer and applies ITO.By the thick PC substrate that constitutes of layer of 175 μ m from the buying of Goodfellows Co. company, wherein the ITO film of 100nm in Edwards A306 RF magnetron under 150W radio-frequency power and the room temperature with the pure argon cathode vacuum spraying plating of 2 mTorr on above-mentioned layer.The cathode vacuum sputter target is 90% indium sesquioxide, and 10% tin oxide, diameter are 3 inches.Deposition is 33nm/min.Organic Light Emitting Diode is by gathering-(N-vinyl carbazole) (polyvinylcarbazole)/2-(4-phenylbenzene)-5-(4-t-butyl-phenyl)-1,3 around single, and 4-oxadiazoles (PBD)/coumarin 6 (C6) layer spins and evaporates 100 to 200nmMg:Ag negative electrodes [Wu] and makes.The refractive index of organic layer is 1.67 when ellipsometer is measured at λ=634nm and λ=830nm.Typical devices size and geometry are made of the circle of diameter 1.75mm.
Do experiment with six different substrate structures, they are represented with test 1 to 6 in table 1.Base wafer assembly figure is provided among Fig. 2 A (having all relevant parameter labels).
Table 1 examination substrate material lens material R
Lensρ
Lenst
Subsθ
MaxD I
Normal/ I
0F/F
0Test (mm) (mm) (mm) ± 0.1 ± 0.11 glass N/A N/A N/A 0.7 N/A N/A 1.0 1.0
(n=1.51) 2 glass glass 3.4 3.4 0.7 78 °+1.0 3.6 2.0
(n=1.51) (n=1.51) 3 glass glass 3.4 3.4 2.0 60 °+2.3 9.5 1.6
(n=1.51) (n=1.51) 4 glass silicones 2.7 2.4 1.9 51 °+0.6 2.1 1.6
(n＝1.51) (n＝1.41)5 PC N/A N/A N/A 1.0 N/A N/A 1.0 1.0
(n=1.61) 6 PC epoxy resin are 2.7 2.4 1.0 67 °-0.3 1.6 3.0
(n＝1.61) (n＝1.60)
Substrate is used for different coupled outside experiments with lens parameter (Fig. 2 A limits).I
Normal/ I
0And F/F
0Gained result's ratio in the same sampling device of making on expression normal transmission intensity and the whole flat plate substrates of emissive porwer with respect to the same substrate material.All the mensuration of emissive porwer does not comprise edge-emission.
In test 1, use the plate glass substrate that does not have change.In test 2 and 3, use from the glass substrate that has glass condenser of Edmund Scientific Co company buying.In test 4, use the glass substrate that has molded silicone lens.In back three tests, use from the gel that is complementary of FIS Co. company buying lens are fixed on the substrate.When needs, substrate thickness can add other glass slide and improves by using with the preceding identical gel that is complementary is sticking.Silicone lens utilizes the silicones (n=1.405) of GE RTV615 to mould with the ball milling impression in the teflon parts.In test 5 and 6, use the PC substrate.In the test 5, use the dressing plate substrate, and in test 6, molded epoxy resin lenses is placed on the PC substrate.Epoxy resin lenses is used above-described same mould manufacturing with two kinds of component epoxy (n=1.61) of Master Bond EP42HT.Lens adhere on the substrate with unvulcanized epoxy resin.For each test, the far field intensity pattern uses large tracts of land (diameter 1cm) Si photodetector at distance device 10cm place, measures with 6 ° increment between 0 ° (normally) is to 90 °.
Previously described three parameters show in Fig. 2 A---substrate coefficient (n
Subs), light enters the maximum angle (θ of lens
Subs, max) and device from the vertical shift value (d at lens curvature center
Offset)---all values are determining that whole emission flux and external intensity all play a decisive role on distributing in this experiment.Because the grasp of parameter, the experiment with computing result is exactly a very simple thing.Normal and whole emission flux of being measured in each test all are listed in the table 1.The emission flux pattern of surveying in each angle place in each test shows in Fig. 3 B and 3C.All emission flux result is at initial position.
In the test that has glass substrate (test 2-4), all launch flux and improved a coefficient between 1.6 to 2.0 ± 0.1.These results are consistent with the assay value that obtains from formula (5) and (1), but note, in test 3, expect bigger d
OffsetCan reduce the efficient of lens a little.(because θ
Subs, max＜sin
-1(n
Silicone/ n
Subs), the low index of silicones does not have considerable influence for the result.) in the experiment of using PC substrate and epoxy resin lenses (test 6), all launch flux (test 5) under the dull and stereotyped PC substrate situation of use and be enhanced 3.0 ± 0.1 coefficient, this meets again by formula (5) and (1) resulting assay value.Note that it should be identical that the dull and stereotyped situation of PC and glass substrate is used in formula (1) indication, in fact effect is identical in the range of indeterminacy of experiment can to observe two kinds of situations (test 1 and 5) from Fig. 3 C.Relatively provide a kind of experimental proof by PC substrate and glass substrate gained result.
The emission Flux Distribution is the result be presented now.In all results, can make general transmit flux and d
OffsetValue is associated.Test 3 expression one limiting value: d
Offset=2.3mm and I
Normal/ I
0=9.5.Test 6 expression another limiting value: d
Offset=-0.3mm and I
Normal/ I
0=1.6.Owing in each test, use different substrate and lens material, I
Normal/ I
0Value not only by d
OffsetDetermine; But I
ExtAnalytical expression and our result all prove, for 6 ° of tapers of standard, d
OffsetIt is reigning parameter.In Fig. 3 B and 3C, whole emission intensity plot results have been presented.These results prove again and improve d
OffsetFocusing effect.Test in addition 6 result prove use that the lens that have high coefficient substrate produce in reproducing organic layer etc. how effectively be on the direction intensity distributions---launch flux in this test to keep effectively from 0 ° to 72 ° continuously.
Be that in Fig. 3 A and 3B, people can find out between the data that are used for plate glass substrate (test 1) and the two kinds of different refraction patterns mentioned above and are associated in fact at last with noting.In addition, data and lambertian distribution result's departs from the further validity that strengthens the described refraction pattern of this specification more greatly.
Though described the present invention in detail, those skilled in the art still need understand above-mentioned specification and not limit its spirit and scope fully.This patent content required for protection is being set forth in the appended claims thereafter.
Claims (20)
1. light-emitting device, this device comprises:
Transparent substrate with first surface and second surface;
Be arranged on the transparency conducting layer on this substrate first surface;
Be arranged on the organic layer on the conductive oxide layer;
Be arranged on the top contact on this organic layer;
Wherein, the profile on this substrate second surface presents molded non-planar.
2. light-emitting device as claimed in claim 1 is characterized in that above-mentioned molded non-planar is spherical.
3. light-emitting device as claimed in claim 1 is characterized in that by the molded substrate surface, makes the profile of second surface present molded non-planar.
4. light-emitting device as claimed in claim 1 is characterized in that the first surface of second hyaline layer by will having non-flat second surface is stacked on the second surface of this substrate, makes the profile of second surface present molded non-planar.
5. a method that improves Organic Light Emitting Diode (OLED) luminous emissivity is characterized in that this Organic Light Emitting Diode is set on the first surface of transparent substrate, and this method comprises the steps:
Make the second surface of this substrate present molded non-planar.
6. the method that is used to improve the Organic Light Emitting Diode luminous emissivity as claimed in claim 5 is characterized in that described molded non-planar is spherical.
7. the method that is used to improve the Organic Light Emitting Diode luminous emissivity as claimed in claim 5, the profile that it is characterized in that described second surface by the described substrate surface of molding so that it presents molded non-planar.
8. the method that is used to improve the Organic Light Emitting Diode luminous emissivity as claimed in claim 5, the first surface that it is characterized in that second hyaline layer by will having the on-plane surface second surface is stacked on the second surface of this substrate, makes described second surface profile present molded non-planar.
9. a method that is used to make light-emitting device comprises the steps:
Transparent substrate with first and second surfaces is provided;
Deposit transparent conductive layer on the first surface of this substrate;
On this transparency conducting layer, deposit the OLED layer;
Make the second surface of this substrate present molded non-planar.
10. the method for manufacturing light-emitting device as claimed in claim 9 is characterized in that this molded non-planar is spherical.
11. the method for manufacturing light-emitting device as claimed in claim 9 is characterized in that by the molded substrate surface, makes the profile of described second surface present molded non-planar.
12. the method for manufacturing light-emitting device as claimed in claim 9 is characterized in that the first surface of second hyaline layer by will having the on-plane surface second surface is stacked on the second surface of this substrate, makes the second surface profile present molded non-planar.
13. a light-emitting device, this device comprises:
Transparent substrate with first surface and second surface;
Be arranged on the Organic Light Emitting Diode layer on this substrate first surface;
Wherein, the described second surface of this substrate is molded as molded non-planar.
14. light-emitting device as claimed in claim 13 is characterized in that above-mentioned molded non-planar is spherical.
15. a light-emitting device, this device comprises:
Transparent substrate with first surface and second surface,
Be arranged on the Organic Light Emitting Diode layer on this substrate first surface;
Wherein, the first surface of second hyaline layer by will having the on-plane surface second surface is stacked on the second surface of this substrate, makes described second surface profile present molded non-planar.
16. light-emitting device as claimed in claim 15 is characterized in that above-mentioned molded non-planar is spherical.
17. a method that improves the light-emitting device luminous emissivity is characterized in that this light-emitting device comprises at least two Organic Light Emitting Diode layers that are arranged on the transparent substrate first surface, this method comprises the steps:
Make the profile of the second surface selected portion of described substrate present molded non-planar, this selected portion is selected it is aimed at one output ray optics at least two Organic Light Emitting Diodes.
18. the method that is used to improve the luminous emissivity of light-emitting device as claimed in claim 17 is characterized in that above-mentioned molded non-planar is spherical.
19. the method that is used to improve the luminous emissivity of light-emitting device as claimed in claim 17, the profile that it is characterized in that described selected second surface by molded described substrate surface so that it presents molded non-planar.
20. the method that is used to improve the luminous emissivity of light-emitting device as claimed in claim 17, the first surface that it is characterized in that second hyaline layer by will having the on-plane surface second surface is stacked on the second surface of this substrate, makes the profile of described selected second surface present molded non-planar.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16255299P | 1999-10-29 | 1999-10-29 | |
| US60/162,552 | 1999-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1384970A true CN1384970A (en) | 2002-12-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00815102A Pending CN1384970A (en) | 1999-10-29 | 2000-10-30 | Organic light emitting diode having spheircal shaped patterns |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1236216A1 (en) |
| JP (1) | JP2003513423A (en) |
| KR (1) | KR20020065893A (en) |
| CN (1) | CN1384970A (en) |
| AU (1) | AU1244601A (en) |
| WO (1) | WO2001033598A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454568C (en) * | 2003-06-06 | 2009-01-21 | 精工爱普生株式会社 | Organic electroluminescent display panel, method of manufacturing it and display device equiped with the panel |
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| US6916440B2 (en) | 2001-05-31 | 2005-07-12 | 3M Innovative Properties Company | Processes and apparatus for making transversely drawn films with substantially uniaxial character |
| AU2002352967A1 (en) | 2001-11-29 | 2003-06-10 | The Trustees Of Princeton University | Increased emission efficiency in organic light-emitting devices on high-index substrates |
| US7012363B2 (en) | 2002-01-10 | 2006-03-14 | Universal Display Corporation | OLEDs having increased external electroluminescence quantum efficiencies |
| FR2836584B1 (en) * | 2002-02-27 | 2004-05-28 | Thomson Licensing Sa | LIGHT EMITTING PANEL WITH LIGHT EXTRACTION ELEMENTS |
| TWI341927B (en) * | 2002-05-15 | 2011-05-11 | Reflexite Corp | Optical structures |
| US7153122B2 (en) | 2002-05-28 | 2006-12-26 | 3M Innovative Properties Company | Apparatus for making transversely drawn films with substantially uniaxial character |
| JP2005175417A (en) * | 2003-07-28 | 2005-06-30 | Ricoh Co Ltd | Light emitting element array, light writing unit, and image forming apparatus |
| CN100511759C (en) | 2003-09-08 | 2009-07-08 | Lg化学株式会社 | Organic light emitting device and manufacturing method thereof |
| KR100977964B1 (en) | 2004-02-04 | 2010-08-24 | 사천홍시현시기건유한공사 | Organic Electroluminescence device |
| GB0404698D0 (en) * | 2004-03-03 | 2004-04-07 | Cambridge Display Tech Ltd | Organic light emitting diode comprising microlens |
| US7414263B2 (en) | 2004-03-16 | 2008-08-19 | Lg Chem, Ltd. | Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing the same |
| CN101180554B (en) | 2005-04-08 | 2012-03-21 | 3M创新有限公司 | Heat setting optical films |
| US7798678B2 (en) | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
| JP4839867B2 (en) * | 2006-02-03 | 2011-12-21 | 株式会社日立製作所 | Light emitting element and display device |
| KR101376558B1 (en) | 2006-06-14 | 2014-03-21 | 코닌클리케 필립스 엔.브이. | Structured oled with micro optics for generating directed light |
| US8373341B2 (en) | 2007-07-10 | 2013-02-12 | University Of Florida Research Foundation, Inc. | Top-emission organic light-emitting devices with microlens arrays |
| GB2457691A (en) | 2008-02-21 | 2009-08-26 | Sharp Kk | Display with regions simultaneously operable in different viewing modes |
| JP2011029172A (en) * | 2009-06-30 | 2011-02-10 | Fujifilm Corp | Organic el device, and design method thereof |
| JP5480567B2 (en) * | 2009-09-01 | 2014-04-23 | パナソニック株式会社 | Organic light emitting device |
| JP5306949B2 (en) * | 2009-09-14 | 2013-10-02 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
| TW201122357A (en) * | 2009-12-31 | 2011-07-01 | Yuieh Hsene Electronics Co Ltd | Light emission device using light transmissive layer as corresponding structure of refraction. |
| WO2012053571A1 (en) * | 2010-10-22 | 2012-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and lighting device |
| US9293734B2 (en) | 2010-12-23 | 2016-03-22 | Universal Display Corporation | Light extraction block with curved surface |
| DE102014214721A1 (en) * | 2014-07-25 | 2016-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Arrangement for spatially and wavelength-resolved detection of light radiation emitted by at least one OLED or LED |
| US10663745B2 (en) | 2016-06-09 | 2020-05-26 | 3M Innovative Properties Company | Optical system |
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| GB9207524D0 (en) * | 1992-04-07 | 1992-05-20 | Smiths Industries Plc | Radiation-emitting devices |
| EP0597391B1 (en) * | 1992-11-09 | 1998-09-09 | Central Glass Company, Limited | Glass plate with ultraviolet absorbing multilayer coating |
| JP3420399B2 (en) * | 1995-07-28 | 2003-06-23 | キヤノン株式会社 | Light emitting element |
| US5814416A (en) * | 1996-04-10 | 1998-09-29 | Lucent Technologies, Inc. | Wavelength compensation for resonant cavity electroluminescent devices |
-
2000
- 2000-10-30 AU AU12446/01A patent/AU1244601A/en not_active Abandoned
- 2000-10-30 WO PCT/US2000/029822 patent/WO2001033598A1/en not_active Application Discontinuation
- 2000-10-30 KR KR1020027005440A patent/KR20020065893A/en not_active Application Discontinuation
- 2000-10-30 CN CN00815102A patent/CN1384970A/en active Pending
- 2000-10-30 EP EP00974009A patent/EP1236216A1/en not_active Withdrawn
- 2000-10-30 JP JP2001535202A patent/JP2003513423A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454568C (en) * | 2003-06-06 | 2009-01-21 | 精工爱普生株式会社 | Organic electroluminescent display panel, method of manufacturing it and display device equiped with the panel |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001033598A8 (en) | 2001-11-01 |
| AU1244601A (en) | 2001-05-14 |
| WO2001033598A1 (en) | 2001-05-10 |
| KR20020065893A (en) | 2002-08-14 |
| EP1236216A1 (en) | 2002-09-04 |
| JP2003513423A (en) | 2003-04-08 |
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