CN1382841A - Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate - Google Patents
Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate Download PDFInfo
- Publication number
- CN1382841A CN1382841A CN 02111002 CN02111002A CN1382841A CN 1382841 A CN1382841 A CN 1382841A CN 02111002 CN02111002 CN 02111002 CN 02111002 A CN02111002 A CN 02111002A CN 1382841 A CN1382841 A CN 1382841A
- Authority
- CN
- China
- Prior art keywords
- growing
- growth
- melt method
- crucible
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A melt method for growing the sosoloid monocrystal of lead lead-titanate niobium-zincate, (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 where x=0.05-0.2, features that the raw material is pretreated by two steps and ther PZNT monocrystal is grown by heterosyntectonic crucible lowering method, where PMNT sosoloid monocrystal is used as seed, temp is 1380-1420 deg.C, the temp gradient at growth interface is 40-80 deg.C and lowering speed is 0.5-1 mm/hr.
Description
Technical field
The present invention relates to the growth method of a kind of relaxation base ferro-electricity single crystal lead lead-titanate niobium-zincate (PZNT) sosoloid monocrystal, more precisely relate to Bridgman-Stockbarge method for growing (preparation) relaxor based ferroelectrics PZNT monocrystalline.Wherein, the crystalline chemical constitution can be expressed as (1-x) Pb (Zn
1/3Nb
2/3) O
3-xPbTiO
3, be abbreviated as PZNT or PZN-PT.Belong to field of crystal growth.
Background technology
Lead lead-titanate niobium-zincate sosoloid is a kind of relaxation base ferroelectric material.There is an accurate homotype phase boundary in this sosoloid, near accurate homotype phase boundary, sosoloid monocrystal of lead lead-titanate niobium-zincate has good piezoelectric property and very big specific inductivity, and the Pb-based lanthanumdoped zirconate titanates that its over-all properties is higher than present application far away is a piezoelectric, piezoelectric strain constant d
33Reach 2000pC/N, electromechanical coupling factor k
33Reach 0.90～0.95, the field causes strain up 1.7%.The superior piezoelectricity of relaxation base ferro-electricity single crystal and electromechanical coupling performance make this material have a wide range of applications aspect the electromechanical transducers of new generation such as medical ultrasonic imaging device, high strain solid driving mechanism, highly sensitive sonar.With the B-scan ultrasonic imager of new generation (B ultrasonic) of this material work probe, its image resolution ratio and frequency span improve greatly.The high emergent property of relaxation base ferro-electricity single crystal makes it have a wide range of applications in high strain driving mechanism, and this will produce great influence to ultrasonic transducer and the contour The Application of Technology of driving mechanism.
With the ceramic phase ratio with composition, sosoloid monocrystal of lead lead-titanate niobium-zincate has more superior piezoelectricity, ferroelectric properties, so the monocrystalline research of relaxation base ferroelectric material is the research focus on present international ferroelectric boundary.At present, flux method is mainly adopted in the growth of sosoloid monocrystal of lead lead-titanate niobium-zincate, for example uses PbO fusing assistant [K.Harada, S.Shimanuki, T.Kobayashi, S.Saitoh and Y.Yamashita, J.Am.Ceram.Soc., 81 (11) (1998) 2785-2788].Flux method growth relaxation base ferro-electricity single crystal has its inherent shortcoming: because the complexity of component and plumbous oxide, zinc oxide easy volatile at high temperature, feasible requirement of shelter to process of growth is very strict, and the degree of supersaturation of growth solution changes greatly, the crystal growing process poor repeatability because the volatilization of oxide compound causes; Sporadic nucleation is difficult to control in the crystal growing process, generates inclusion easily, is difficult to obtain high quality, large-sized sosoloid monocrystal; Production efficiency is lower, and crystal growth is difficult to realize mass-producing [K.Harada, Y.Hosono, S.Saitoh and Y.Yamashita, Jpn.J.Appl.Phys., 39 (2000) 3117-3120].At present; flux method can't accomplish scale production large size, high-quality relaxation base ferro-electricity single crystal; crystalline size and quality all do not satisfy the requirement that ultra sonic imaging and high strain driving mechanism etc. are used, and crystal growth technique is not also broken through breadboard research level.
Compare with flux method, the Bridgman-Stockbarge method for growing technology can realize the mass-producing growing single-crystal, by introducing seeded growth, realizes the may command growth of crystalline size, the crystal growing process good reproducibility.Regrettably, there is not any publication openly to report up to now as yet and uses the melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate.
Summary of the invention
The object of the present invention is to provide a kind of reliable method of the sosoloid monocrystal of lead lead-titanate niobium-zincate of growing, this growth technique is realized the mass-producing of crystal growth easily, controlled, the good reproducibility of process of growth.The sosoloid monocrystal of lead lead-titanate niobium-zincate of this method growth is pure perovskite structure, crystalline structure is complete, piezoelectric property is good, realize the amplification of crystalline size easily, be expected to produce the large size, the high performance relaxation base ferro-electricity single crystal that satisfy application demands such as ultra sonic imaging and high strain driving mechanism.
The objective of the invention is to be undertaken that the melt method for growing of PZNT monocrystalline implements by a kind of falling crucible method, this method comprises: with zinc oxide, Niobium Pentxoxide, titanium dioxide and plumbous oxide is raw material, adopts the pre-synthesis method in B position to prepare the required raw material of crystal growth; Pre-synthetic material sealing in platinum crucible, is carried out the crystalline melt method for growing with the falling crucible method method.It is characterized in that proportioning raw materials is according to chemical formula (1-x) Pb (Zn
1/3Nb
2/3) O
3-xPbTiO
3Carry out, x is 0.05～0.20; The crucible fall off rate is 0.5～1.0mm/h.The thermograde of solid-liquid growth interface is 40-80 ℃/cm, and the Control for Kiln Temperature of crystal growing process is between 1380-1420 ℃.
Concrete enforcement of the present invention is divided into two and goes on foot greatly: the first step is the pre-treatment of crystal growth raw material; Second step was to carry out melt method for growing PZNT monocrystalline with crucible decline technology.
(1) pre-treatment of raw material
The raw material that the present invention uses is analytically pure zinc oxide, Niobium Pentxoxide, titanium dioxide and plumbous oxide, and the crystal chemistry according to design behind the raw material drying is formed (1-x) Pb (Zn
1/3Nb
2/3) O
3-xPbTiO
3Proportioning, wherein the preferential stoicheiometry of recommending in X=0.05～0.20 is X=0.09, i.e. 0.91Pb (Zn
1/3Nb
2/3) O
3-0.09PbTiO
3
The pre-treatment of raw material comprise batching, mixing, thermal treatment with etc. static pressure become piece.The purity requirement of raw material is higher, to reduce the defective of growing crystal.The mixing of raw material does not have strict restriction, and general mixing apparatus can use, as long as raw material is mixed, according to batching what, preferentially adopts " V " type stainless steel mixing tank and wet ball grinding to mix.Raw material can isostatic cool pressing also can not wait static pressure to become piece, in order to increase the size of growing crystal, increases the quality of feeding in the platinum crucible, and preferred isostatic cool pressing becomes piece.
The zinc oxide that mixes, Niobium Pentxoxide and titanium dioxide place the platinum crucible of adding a cover at 850-1150 ℃, react thermal treatment in 1-4 hour, and winner's composition is the zinc niobate (ZnNb of niobite structure
2O
6), have the zinc niobium titanyl compound (Zn of rutile structure on a small quantity
0.17Nb
0.33Ti
0.5O
2) and micro-anatase structured titanium dioxide (TiO
2).The products therefrom fine grinding, sieve, the plumbous oxide that adds the metering ratio mixes, and then, places the platinum crucible of adding a cover at 700-800 ℃ of thermal treatment 1-2 hour, and winner's composition is the yellow lead lead-titanate niobium-zincate sosoloid (Pb[(Zn of perovskite structure
1/3Nb
2/3)
1-xTi
x] O
3) with a small amount of burnt green stone niobium zinc titanyl compound (Pb mutually
1.83Nb
1.71Zn
0.29O
6.39).Above-mentioned product fine grinding, sieve, through calm hydraulic pressure or compression molding pre-treatment powder as crystal growth.
(2) melt method for growing of sosoloid monocrystal of lead lead-titanate niobium-zincate
Its difficulty of melt method for growing that falling crucible method carries out the PZNT monocrystalline is to determine suitable growth technique condition, comprise the warm field distribution of determining growth furnace, the thermograde of solid-liquid interface, the fall off rate of crucible reaches the carrying out along with growth, the timely adjusting of temperature field in the stove.All these technologies preferred all is the generation for fear of the green stone phase of Jiao, guarantees to grow the uniform PZNT monocrystalline of component.
The Pb[(Mg of heterogeneous isomorphism is adopted in crystal growth
1/3Nb
2/3)
0.69Ti
0.31] O
3Monocrystalline is as seed crystal, and this is an another important technology feature of the present invention, so select the seed crystal of PMNT monocrystalline as growth PZNT, is based on following 3 reasons:
The one, Pb[(Mg
1/3Nb
2/3)
0.69Ti
0.31] O
3Monocrystalline with the PZNT crystalline structure difference of growing less; The 2nd, have only a kind of impurity of Mg element in the two component, can reduce the introducing of impurity.Certainly, it is optimal to say so theoretically with PZNT seeded growth, but PZNT single crystal preparation process difficulty is often easy to crack.The 3rd, the applicant has comparatively sophisticated PMNT single crystal growing technology, and a large amount of PMNT seed crystals can stably be provided.
The seeded growth The Application of Technology has suppressed the generation of sporadic nucleation in the crystal growing process effectively, helps realizing the growth of crystalline may command, obtains large size, high performance PZNT monocrystalline.Crystal growth along seed crystal＜111 or＜110〉direction, according to crucible size, the cross-sectional area of selecting seed crystal for use and the ratio of the cross-sectional area of growing crystal are greater than 70%, to realize the continuous amplification of crystalline size.
The crucible that crystal growth is used, requirement can be born growth temperature, does not react with growth raw material simultaneously, for example precious metal or alloy crucible, particularly the oxide compound crucible of the crucible made of precious metal or coating or nitride crucible or the like, wherein preferred platinum crucible is convenient to processing, is reused.Install the easy welded seal of platinum crucible of seed crystal and growth raw material, realize the crystal growth under the sealed state, suppressed the volatilization of PbO, reduced pollution environment.Thickness, the shape of crucible do not have special requirement, and the thickness that as far as possible reduces platinum crucible under the prerequisite that can bear growth conditions is to reduce manufacturing cost.Crystal growing process adopts the many crucibles of a stove, and to enhance productivity, there have been a plurality of patent disclosures in technology Shanghai Inst. of Silicate, Chinese Academy of Sciences of this respect, CN1113970A for example, and the present invention is in conjunction with reference for its content.
Crystal growth equipment can adopt general warm terraced subtraction unit; also can adopt homemade crucible lowering means; for example we use aluminum oxide lagging material homemade monocrystalline decline stove (Fig. 5); can put into 4～10 platinum crucibles in the growth furnace; carry out the crystalline growth simultaneously, help realizing the mass-producing of PZNT single crystal growing.The heating element of growth furnace is MoSi
2Rod, the growth furnace temperature is 1200 ℃～1440 ℃, along the maximum temperature gradient of crucible descending direction greater than 60 ℃/cm.Main temperature controlling instruments is the DWK-702 precision temperature controller, temperature-controlled precision is big ± and 0.5 ℃.The mechanical precision of crucible fall off rate generally is controlled at ± and 0.1%, to grow the uniform PZNT monocrystalline of component.
Pretreated material sealing adopts falling crucible method to carry out the melt method for growing of sosoloid monocrystal of lead lead-titanate niobium-zincate in platinum crucible.Heterogeneous isomorphism seeded growth technology is adopted in crystal growth, utilizes lead magnoniobate lead titanate Pb[(Mg
1/3Nb
2/3)
0.69Ti
0.31] O
3Monocrystalline is as seed crystal, and crystal growth is along (111) or (110) face of seed crystal.Crystal growing process does not add fusing assistant.The Control for Kiln Temperature of growth furnace is at 1380 ℃, carrying out along with growth, the furnace temperature of growth furnace heats up according to the speed of 6 ℃/24hrs, and the temperature of growth furnace is controlled with DWK-702 PID (Proportional integral differential controller) precision temperature controller.The thermograde of solid-liquid growth interface is 40～80 ℃/cm, and lowering speed is 0.5-1.0mm/h.The crystal growth temperature-fall period, all crucibles were 700 ℃ of insulations 4 hours, and then, the temperature of growth furnace is reduced to room temperature with the speed of 50-80 ℃/h.
Compare with flux method growth PZNT monocrystalline, the characteristics of the growth method of sosoloid monocrystal of lead lead-titanate niobium-zincate provided by the invention are: 1. adopt the pre-synthesis method in B position to carry out the pre-treatment of raw material, suppressed the generation of burnt green stone phase in the crystal growing process effectively.2. adopt falling crucible method and heterogeneous isomorphism seeded growth technology, realized the control and the mass-producing of crystal growing process, improved repeatability; Suppressed the generation of sporadic nucleation in the crystal growing process, perfection of crystal is good.3. adopt the melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate, do not add fusing assistant, reduced the generation of inclusion in the crystal, improved crystal mass.4. crystal growth equipment is simple, and growthing process parameter is controlled easily, adopts a plurality of crucibles to carry out crystal growth simultaneously, has improved production efficiency.
The lead lead-titanate niobium-zincate of present method growth is because of the solution monocrystalline, and getting size is 10 * 12mm
2, (001) direction wafer carry out piezoelectric property test.Wafer plates silver ink firing electrode (550 ℃ thermal treatment 0.5 hour), polarization back (polarization condition: added the 1kV/mm electric field 15 minutes in 150 ℃ of silicone oil baths, be cooled to room temperature under the condition that electric field reduces by half), measures piezoelectric constant d
33, table 1 has provided the test result that every 2mm gets a point, shows that the monocrystalline of this method growth has good piezoelectric property.The electric property of test monocrystalline, this monocrystalline (001) wafer has bigger specific inductivity under the room temperature, is about 4000, and dielectric loss is lower, less than 0.1%.
Table 1 is the piezoelectric property d of sosoloid monocrystal of lead lead-titanate niobium-zincate (001) wafer
33(pC/N).Wafer size is 10 * 12mm
2, get a point every 2mm and test.
Table 1
Can grow piezoelectric constant d with technology of the present invention
33High-quality PZNT monocrystalline greater than 2000pC/N.Method of the present invention provides a kind of feasible scheme for the difficulty of the growth of solution relaxation base ferro-electricity single crystal, the large-scale industrial production of realization PZNT monocrystalline.Find out thus, melt method for growing relaxation base ferro-electricity single crystal provided by the invention---the method for lead lead-titanate niobium-zincate (PZNT) sosoloid monocrystal, can stably grow high-quality PZNT monocrystalline, realize the amplification of crystalline size being expected to prepare the PZNT monocrystalline that satisfies hi-tech application requiring such as ultra sonic imaging and high strain driving mechanism easily.
| ??2066 | ??1894 | ??1976 | ??1896 | ??1898 | ??2015 |
| ??2100 | ??1965 | ??1995 | ??1907 | ??2016 | ??1990 |
| ??1908 | ??2004 | ??2010 | ??1945 | ??1895 | ??1890 |
| ??2036 | ??1989 | ??1998 | ??2006 | ??1976 | ??2045 |
Description of drawings
Fig. 1 is the XRD diffraction curve of pre-treatment powder.(a) ZnO, Nb
2O
5And TiO
2950 ℃ of thermal treatments of compound 1.5 hours; (b) be the PbO that the powder of (a) gained adds the metering ratio, 750 ℃ of thermal treatment 1.5 hours.
Fig. 2 is the XRD diffraction curve of the sosoloid monocrystal of lead lead-titanate niobium-zincate of melt method for growing, corresponds respectively to the XRD test result of same monocrystalline top and bottom.
Fig. 3 is specific inductivity, the loss temperature spectrum before the polarization of sosoloid monocrystal of lead lead-titanate niobium-zincate (001) wafer.
Embodiment
For further understanding substantive distinguishing features of the present invention and obvious improvement, the embodiment in conjunction with indefiniteness further specifies embodiments of the present invention and effect with reference to the accompanying drawings:
Obtain the raw material of crystal growth with the pre-synthesis method in B position, growth raw material is according to chemical formula (1-x) Pb (Zn
1/3Nb
2/3) O
3-xPbTiO
3The X=0.09 proportioning.High-purity zinc oxide, Niobium Pentxoxide and titanium dioxide powder mix with wet ball grinding, and gained powder drying is placed in the platinum imitation frosted glass crucible of adding a cover, and 950 ℃ of thermal treatments 1.5 hours, winner's composition was the zinc niobate (ZnNb of niobite structure
2O
6).Above-mentioned powder adds the plumbous oxide of metering ratio, wet ball grinding mixes, gained powder drying is placed in the platinum imitation frosted glass crucible of adding a cover, and 750 ℃ of thermal treatments 1.5 hours, gained pretreating raw material master composition was the lead lead-titanate niobium-zincate sosoloid 0.91Pb (Zn of perovskite structure
1/3Nb
2/3) O
3-0.09PbTiO
3Above-mentioned powder isostatic cool pressing method binder is become piece.Yet carry out the melt method for growing of sosoloid monocrystal of lead lead-titanate niobium-zincate with falling crucible method.Adopt the Pb[(Mg of heterogeneous isomorphism
1/3Nb
2/3)
0.69Ti
0.31] O
3Monocrystalline is as seed crystal, and crystal growth is along (111) face of seed crystal, and the cross-sectional area of seed crystal is the 80% continuous amplification with the realization crystalline size with the ratio of the cross-sectional area of growing crystal.The furnace temperature of single crystal growing furnace rises to the small portion at 1380 ℃ of fusing briquetting material and seed crystal top, is incubated after 6 hours, and with 0.65mm/h speed decline crucible, growth PZNT crystal.Along with the carrying out of growth, the furnace temperature of single crystal growing furnace heats up with 6 ℃/24h speed, and furnace temperature reaches as high as 1420 ℃ during growth ending.Crystal growth phase reaches 80 ℃/cm along the maximum temperature gradient of crucible descending direction, and the thermograde of steady-state growth stage solid-liquid growth interface can maintain 50 ℃/cm.After crystal growth finished, with the cooling of cooling motor, rate of temperature fall was 15 ℃/h.The crystal growth temperature-fall period, all growth crucible are shaken to initial growth position insulation 4 hours in the time of 700 ℃, and then, the temperature of growth furnace is reduced to room temperature with the speed of 60 ℃/h.
The X=0.15 main composition of configuration earlier is the zinc niobate of niobite structure, treatment temp was handled 1.2 hours for 980 ℃, add PbO again, treatment temp be 700 ℃ 2 hours, then along (110) length of looking unfamiliar, 60 ℃/cm of thermograde, the growth furnace temperature control is at 1400 ℃, cooling rate is 10 ℃/h, and all the other are with embodiment 1, and its performance is as shown in table 1.
Claims (9)
1, a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal comprises that raw material is handled, intensification is melted, grows and the cooling crystal growth technique, it is characterized in that:
A, press chemical formula and form (1-x) Pb (Zn
1/3Nb
2/3) O
3-xPbTiO
3Proportioning, wherein x=0.05～0.20;
B, raw materials pretreatment are the mixing raw materials of zinc oxide, Columbium pentoxide and the titanium dioxide that will mix, in 850-1150 ℃ of reaction thermal treatment in 1-4 hour, add metering then than plumbous oxide 700-800 ℃ of thermal treatment 1-2 hour;
C, make seed crystal with the magnoniobate sosoloid monocrystal of lead lead-titanate, do not add fusing assistant, the heterogeneous isomorphism Bridgman-Stockbarge method for growing, the Control for Kiln Temperature of process of growth is 1380-1420 ℃ of scope, the thermograde of solid-liquid growth interface is 40-80 ℃, and lowering speed is 0.5-1.0mn/h.
2, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: chemical constitution is 0.91Pb (Zn
1/3Nb
2/3) O
3-0.09PbTiO
3
3, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: crystal is along PMNT seed crystal＜111〉or＜110〉direction growths.
4, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: main composition is the zinc niobate of niobite structure after the zinc oxide that mixes, Columbium pentoxide and the thermal treatment of titanium dioxide compound; Add metering PbO, main composition is the yellow powder of calcium peptide ore deposit structure after the thermal treatment.
5, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: the cross-sectional area of selecting seed crystal for use and the ratio of the cross-sectional area of growing crystal are greater than 70%.
6, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: the crucible that uses during growth is the oxide compound crucible or the nitride crucible of precious metal crucible or coating.
7, by claim 1 or 6 described a kind of melt method for growing that prepare lead zinc niobate metatitanic acid sosoloid monocrystal, it is characterized in that: use platinum crucible during growth.
8, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: after the mixed back of plumbous oxide of raw materials pretreatment process adding metering is even, place the platinum crucible of adding a cover.
9, by the described a kind of melt method for growing for preparing lead zinc niobate metatitanic acid sosoloid monocrystal of claim 1, it is characterized in that: along the maximum temperature gradient of crucible descending direction greater than 60 ℃/cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021110026A CN1187483C (en) | 2002-03-12 | 2002-03-12 | Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021110026A CN1187483C (en) | 2002-03-12 | 2002-03-12 | Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1382841A true CN1382841A (en) | 2002-12-04 |
| CN1187483C CN1187483C (en) | 2005-02-02 |
Family
ID=4741357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021110026A Expired - Fee Related CN1187483C (en) | 2002-03-12 | 2002-03-12 | Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1187483C (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336944C (en) * | 2004-04-02 | 2007-09-12 | 中国科学院上海硅酸盐研究所 | Two-steps method for growing niobium plumbum zincic acid-aluminium titanate of relaxation ferroelectric monocrystal |
| CN100354229C (en) * | 2003-07-11 | 2007-12-12 | 艾布尔光子学有限公司 | A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof |
| CN100390327C (en) * | 2005-08-03 | 2008-05-28 | 清华大学 | Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent |
| CN100429334C (en) * | 2004-12-03 | 2008-10-29 | 中国科学院上海硅酸盐研究所 | Pyroelectric single crystal material of PMN-PT and application thereof |
| CN100437949C (en) * | 2003-06-05 | 2008-11-26 | 上海交通大学 | Method for preparing electric ferroelectric thick film by liquid phase epitaxy |
| CN101805185A (en) * | 2010-03-19 | 2010-08-18 | 江苏工业学院 | Method for preparing leadmagnesio-niobate lead titanate relaxation ferroelectric ceramics |
| CN101851091A (en) * | 2010-04-14 | 2010-10-06 | 河北理工大学 | Temperature change resistance composite high-dielectric electronic material and preparation method thereof |
| CN102383189A (en) * | 2011-11-02 | 2012-03-21 | 南京航空航天大学 | Preparation method for lead zinc niobate-lead titanate monocrystal |
| CN102492991A (en) * | 2011-12-14 | 2012-06-13 | 常州大学 | Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof |
| CN101747036B (en) * | 2009-12-22 | 2012-07-04 | 河北理工大学 | Low-frequency dielectric ceramic with low-temperature sintering and ultralow temperature change ratio and preparation method thereof |
| CN101723677B (en) * | 2009-02-24 | 2012-11-28 | 江苏工业学院 | Preparation method of ferroelectric ceramics with high dielectric constant and low dielectric loss |
| CN104152997A (en) * | 2013-05-14 | 2014-11-19 | 中国科学院上海硅酸盐研究所 | Quaternary relaxation piezoelectric single crystal material and growing method thereof |
| CN104153000A (en) * | 2013-05-14 | 2014-11-19 | 中国科学院上海硅酸盐研究所 | Ternary relaxation piezoelectric single crystal material and growing method thereof |
| CN104480530A (en) * | 2014-12-31 | 2015-04-01 | 西安交通大学 | Preparation method for relaxor ferroelectric single crystal raw material |
| CN112899780A (en) * | 2021-01-20 | 2021-06-04 | 吉林大学 | Directional growth method of relaxation ferroelectric single crystal lead niobate zincate-lead titanate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437950C (en) * | 2006-12-22 | 2008-11-26 | 中国科学院上海硅酸盐研究所 | Height tropism zinc oxide nano column array ultrasonic auxiliary water solution preparation method |
-
2002
- 2002-03-12 CN CNB021110026A patent/CN1187483C/en not_active Expired - Fee Related
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437949C (en) * | 2003-06-05 | 2008-11-26 | 上海交通大学 | Method for preparing electric ferroelectric thick film by liquid phase epitaxy |
| CN100354229C (en) * | 2003-07-11 | 2007-12-12 | 艾布尔光子学有限公司 | A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof |
| CN100336944C (en) * | 2004-04-02 | 2007-09-12 | 中国科学院上海硅酸盐研究所 | Two-steps method for growing niobium plumbum zincic acid-aluminium titanate of relaxation ferroelectric monocrystal |
| CN100429334C (en) * | 2004-12-03 | 2008-10-29 | 中国科学院上海硅酸盐研究所 | Pyroelectric single crystal material of PMN-PT and application thereof |
| CN100390327C (en) * | 2005-08-03 | 2008-05-28 | 清华大学 | Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent |
| CN101723677B (en) * | 2009-02-24 | 2012-11-28 | 江苏工业学院 | Preparation method of ferroelectric ceramics with high dielectric constant and low dielectric loss |
| CN101747036B (en) * | 2009-12-22 | 2012-07-04 | 河北理工大学 | Low-frequency dielectric ceramic with low-temperature sintering and ultralow temperature change ratio and preparation method thereof |
| CN101805185A (en) * | 2010-03-19 | 2010-08-18 | 江苏工业学院 | Method for preparing leadmagnesio-niobate lead titanate relaxation ferroelectric ceramics |
| CN101805185B (en) * | 2010-03-19 | 2013-03-13 | 江苏工业学院 | Method for preparing leadmagnesio-niobate lead titanate relaxation ferroelectric ceramics |
| CN101851091B (en) * | 2010-04-14 | 2012-09-12 | 河北理工大学 | Temperature change resistance composite high-dielectric electronic material and preparation method thereof |
| CN101851091A (en) * | 2010-04-14 | 2010-10-06 | 河北理工大学 | Temperature change resistance composite high-dielectric electronic material and preparation method thereof |
| CN102383189A (en) * | 2011-11-02 | 2012-03-21 | 南京航空航天大学 | Preparation method for lead zinc niobate-lead titanate monocrystal |
| CN102383189B (en) * | 2011-11-02 | 2013-12-18 | 南京航空航天大学 | Preparation method for lead zinc niobate-lead titanate monocrystal |
| CN102492991A (en) * | 2011-12-14 | 2012-06-13 | 常州大学 | Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof |
| CN104152997A (en) * | 2013-05-14 | 2014-11-19 | 中国科学院上海硅酸盐研究所 | Quaternary relaxation piezoelectric single crystal material and growing method thereof |
| CN104153000A (en) * | 2013-05-14 | 2014-11-19 | 中国科学院上海硅酸盐研究所 | Ternary relaxation piezoelectric single crystal material and growing method thereof |
| CN104153000B (en) * | 2013-05-14 | 2016-08-10 | 中国科学院上海硅酸盐研究所 | Ternary system relaxation type monocrystalline piezoelectric material and growing method thereof |
| CN104152997B (en) * | 2013-05-14 | 2018-07-20 | 中国科学院上海硅酸盐研究所 | Quaternary system relaxation type monocrystalline piezoelectric material and its growing method |
| CN104480530A (en) * | 2014-12-31 | 2015-04-01 | 西安交通大学 | Preparation method for relaxor ferroelectric single crystal raw material |
| CN112899780A (en) * | 2021-01-20 | 2021-06-04 | 吉林大学 | Directional growth method of relaxation ferroelectric single crystal lead niobate zincate-lead titanate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1187483C (en) | 2005-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1187483C (en) | Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate | |
| Luo et al. | Growth and characterization of relaxor ferroelectric PMNT single crystals | |
| EP2235762B1 (en) | Method of making ternary piezoelectric crystals | |
| Harada et al. | Crystal growth and electrical properties of Pb ((Zn1/3Nb2/3) 0.91 Ti0. 09) O3 single crystals produced by solution Bridgman method | |
| CN1080777C (en) | Method for preparing relaxing ferroelectric single crystal lead magnoniobate | |
| CN101985775A (en) | Ternary system relaxation ferroelectric single crystal material and preparation method thereof | |
| WO2005035840A1 (en) | Piezoelectric single crystal, piezoelectric single crystal element and method for preparation thereof | |
| CN104419984B (en) | Preparation method of perovskite-structure relaxor ferroelectric single crystal lead indium niobate-lead magnesium niobate-lead titanate | |
| Chen et al. | Bridgman growth, crystallographic characterization and electrical properties of relaxor-based ferroelectric single crystal PIMNT | |
| CN104372409B (en) | Ternary system relaxation base ferroelectric piezoelectric single crystal and its growing method | |
| Fang et al. | Growth mechanism and electrical properties of Pb [(Zn1/3Nb2/3) 0.91 Ti0. 09] O3 single crystals by a modified Bridgman method | |
| Guo et al. | Growth and electrical properties of Pb (Sc1/2Nb1/2) O3–Pb (Mg1/3Nb2/3) O3–PbTiO3 ternary single crystals by a modified Bridgman technique | |
| CN104152997B (en) | Quaternary system relaxation type monocrystalline piezoelectric material and its growing method | |
| US6899761B2 (en) | Single crystals of lead magnesium niobate-lead titanate | |
| CN110318097B (en) | Preparation method of lanthanum gallium niobate single crystal | |
| CN102383189A (en) | Preparation method for lead zinc niobate-lead titanate monocrystal | |
| CN1410603A (en) | Growth of high curie point lead niobate lead indate-lead titanate single crystal using crucible descending method | |
| Benayad et al. | Segregation study and segregation modeling of Ti in Pb [(Mg1/3Nb2/3) 0.60 Ti0. 40] O3 single crystal grown by Bridgman method | |
| Xu et al. | Seeded growth of relaxor ferroelectric single crystals Pb [(Zn1/3Nb2/3) 0.91 Ti0. 09] O3 by the vertical bridgman method | |
| KR102493602B1 (en) | METHOD OF FABRICATING COMPOSITE TEMPLATE CERAMIC OF PLATE―LIKE (Pb,Ba)TiO3 | |
| US8597535B2 (en) | Method of making ternary piezoelectric crystals | |
| Benayad et al. | Characteristics of Pb [(Zn1/3Nb2/3) 0.955 Ti0. 045] O3 single crystals versus growth method | |
| Wang et al. | Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2) O3–Pb (Mg1/3Nb2/3) O3–PbTiO3 by the seed-induced modified Bridgman technique | |
| Karaki et al. | Top-seeded solution growth of Pb [(In1/2Nb1/2),(Mg1/3Nb2/3), Ti] O3 single crystals | |
| CN100560812C (en) | The preparation method of lead niobate lead indate-lead titanate lead solid solution monocrystalline |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |