CN1381909A - Method for modifying spin valve with surfactant - Google Patents
Method for modifying spin valve with surfactant Download PDFInfo
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- CN1381909A CN1381909A CN 02103674 CN02103674A CN1381909A CN 1381909 A CN1381909 A CN 1381909A CN 02103674 CN02103674 CN 02103674 CN 02103674 A CN02103674 A CN 02103674A CN 1381909 A CN1381909 A CN 1381909A
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- spin valve
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Abstract
A method for modifying spin valve by surfactant features that the Ta, NiFa, Cu, Bi, NiFe, FeMn and Ta are sequentially deposited on a cleaned glass substrate. Bi as surfactant is used, and so the exchange coupling field Hex is increased to 60%. Its advantages are easy preparing, and low cost.
Description
Technical field: the present invention relates to the preparation method of giant magnetoresistance multilayer film, particularly relate to the modification of Spin Valve giant magnetoresistance multilayer film.
Background technology: the Spin Valve multilayer film is the giant magnetic resistor material of a kind of practicability of developing rapidly the nearly more than ten years, and it has broad application prospects at transducer, hard disc of computer read head and magneto-resistor random asccess memory aspects such as (MRAM).The key for preparing this thin-film material is at the top layer deposition antiferromagnet FeMn of multilayer film layer; so that itself and following soft magnetosphere produce pinning effect; at document B.Dieny; V.S.Speriosu; J S.Metin; S.S.P.Parkin; B.A.Gurney; P.Baumgart; and D.R.Wilhoit, J.Appl.Phys., 69; 4774 (1991). the typical structure of middle proposition is: monocrystalline silicon Si/ tantalum Ta (50 )/ferronickel NiFe (60 )/copper Cu (22 )/ferronickel NiFe (40 )/ferrimanganic FeMn (70 )/tantalum Ta (50 ), tantalum Ta is respectively nonmagnetic resilient coating and protective layer.Though the Spin Valve multilayer film of this structure can be used for making relevant magneto-resistance device,, as document Yu Guanghua, Li Minghua, Zhu Fengwu, JiangHongwei, Lai Wuyan, and Chai Chunlin, Chin.Phys.Lett., 18,1245 (2001).That reports is such, segregates to the NiFe/FeMn interface easily owing to isolate Cu layer atom, causes the exchange coupling field of this Spin Valve giant magnetoresistance multilayer film to descend, thereby influences its magnetics stability.At present, in order to improve the magnetics stability of device, need increase the exchange coupling field H between antiferromagnet and the ferromagnetic material as much as possible
ExDocument A.E.Berkowitz, Kentaro Takano, J.Magn.Magn.Mater., 200,552 (1999) the middle methods that propose to adopt usually are: with the alternative FeMn material of antiferromagnets such as IrMn, PtMn and PdPtMn.Do like this, no doubt improved exchange coupling field H
Ex, increased magnetics stability, but also brought new problem.Because at first be that these noble metal manganese alloy antiferromagnets are relatively expensive, in addition, after finishing based on the Spin Valve multilayer film preparation of these antiferromagnets, the film exchange coupling field H that has
ExVery little, even be zero, need carry out magnetic-field heat treatment and make and exchange coupling system magnetic order just can reach higher exchange coupling field H
ExSo, owing to these two reasons will cause cost to increase greatly.
Summary of the invention: the present invention proposes surfactant Bi is inserted in the typical Spin Valve NiFe/Cu/NiFe/FeMn structure, not only can improve the exchange coupling field H between NiFe and FeMn
Ex, the magnetics stability of increase Spin Valve simultaneously, can reduce relevant element manufacturing cost.
The present invention inserts a spot of surfactant Bi between Cu layer in the Ta/NiFe/Cu/NiFe/FeMn/Ta structure and the pinned NiFe layer, to prepare the Spin Valve giant magnetoresistance multilayer film of improvement in performance.Preparation process is to carry out in magnetic control sputtering device; with deposition of tantalum Ta (50～120 )/ferronickel NiFe (60～100 )/copper Cu (23～30 )/Bi (2～30 )/ferronickel NiFe (35～60 )/ferrimanganic FeMn (70～150 )/tantalum Ta (50～90 ) successively on the glass substrate that cleans up or the monocrystalline silicon substrate, the Ta layer is respectively as resilient coating and protection against oxidation layer.Sputtering chamber base vacuum degree is 1 * 10
-5～6 * 10
-5Pa, it is 0.4～0.7Pa that argon gas during sputter (99.99%) is pressed; Substrate is cooled with circulating water, and is parallel to the magnetic field that the substrate direction is added with 150～250Oe, to bring out a direction of easy axis.
The present invention is owing to adopt surfactant Bi to insert in the Spin Valve giant magnetoresistance multilayer film film, surfactant Bi is compared with NiFe with Cu less surface free energy and diffusion into the surface ability faster, can suppress Cu atom gathering partially at the NiFe/FeMn interface.Thereby the exchange coupling of Spin Valve giant magnetoresistance multilayer film can not be subjected to the influence of any impurity, its exchange coupling field H
ExThan the exchange coupling field H that does not insert the Spin Valve of Bi
ExImprove maximum and can reach 60%, have easy to prepare, do not need magnetic-field heat treatment, low, the exchange coupling field H of cost
ExImprove advantages such as obvious.
Description of drawings: Fig. 1 is the exchange coupling field H of Spin Valve giant magnetoresistance multilayer film Ta (60 )/ferronickel NiFe (70 )/copper Cu (26 )/Bi (χ )/ferronickel NiFe (45 )/ferrimanganic FeMn (120 )/tantalum Ta (60 )
ExWith the relation curve that inserts Bi layer thickness χ.
Embodiment: preparation Spin Valve giant magnetoresistance multilayer film in magnetic control sputtering device.At first with glass substrate organic chemistry solvent and deionized water ultrasonic cleaning, on the sputtering chamber sample base of packing into then.Substrate is cooled with circulating water, and is parallel to the magnetic field that the substrate direction is added with 250 Oe.Sputtering chamber base vacuum 4 * 10
-5Pa, argon gas when sputter (purity is 99.99%) press and to be deposition of tantalum Ta (60 )/ferronickel NiFe (70 )/copper Cu (26 )/Bi (12 )/ferronickel NiFe (45 )/ferrimanganic FeMn (120 )/tantalum Ta (60 ) successively under the condition of 0.5Pa.From Fig. 1 exchange coupling field H
ExWith in the relation curve that inserts Bi layer thickness χ as can be seen, exchange coupling field H between NiFe/FeMn in the Spin Valve when inserting the thick activator Bi of 12
ExCompare when not inserting activator Bi and improved 60%.
Claims (2)
1, a kind of method of utilizing surfactant to modifying spin valve, in magnetic control sputtering device, to deposit Ta, NiFe, Cu, NiFe, FeMn, Ta on the glass substrate that clean up or the monocrystalline silicon substrate, it is characterized in that the order of deposition is tantalum Ta (50～120 )/ferronickel NiFe (60～100 )/copper Cu (23～30 )/Bi (2～30 )/ferronickel NiFe (35～60 )/ferrimanganic FeMn (70～150 )/tantalum Ta (50～90 ) successively.
2, the method for utilizing surfactant to modifying spin valve as claimed in claim 1 is characterized in that, sputtering chamber base vacuum degree is 1 * 10
-5～6 * 10
-5Pa, Ar Pressure is 0.4～0.7Pa during sputter, substrate is cooled with circulating water, and is parallel to the magnetic field that the substrate direction is added with 150～250 Oe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021036748A CN1141743C (en) | 2002-02-08 | 2002-02-08 | Method for modifying spin valve with surfactant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021036748A CN1141743C (en) | 2002-02-08 | 2002-02-08 | Method for modifying spin valve with surfactant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1381909A true CN1381909A (en) | 2002-11-27 |
| CN1141743C CN1141743C (en) | 2004-03-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021036748A Expired - Fee Related CN1141743C (en) | 2002-02-08 | 2002-02-08 | Method for modifying spin valve with surfactant |
Country Status (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007076718A1 (en) * | 2005-12-31 | 2007-07-12 | Institute Of Physics, Chinese Academy Of Sciences | A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| CN102623132A (en) * | 2012-03-30 | 2012-08-01 | 海南大学 | Method for improving anisotropic magnetoresistance sensitivity by using surfactant |
-
2002
- 2002-02-08 CN CNB021036748A patent/CN1141743C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007076718A1 (en) * | 2005-12-31 | 2007-07-12 | Institute Of Physics, Chinese Academy Of Sciences | A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| US7936595B2 (en) | 2005-12-31 | 2011-05-03 | Institute Of Physics, Chinese Academy Of Sciences | Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| CN102623132A (en) * | 2012-03-30 | 2012-08-01 | 海南大学 | Method for improving anisotropic magnetoresistance sensitivity by using surfactant |
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| Publication number | Publication date |
|---|---|
| CN1141743C (en) | 2004-03-10 |
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