CN1379803A - Improved CMP products - Google Patents
Improved CMP products Download PDFInfo
- Publication number
- CN1379803A CN1379803A CN00814323A CN00814323A CN1379803A CN 1379803 A CN1379803 A CN 1379803A CN 00814323 A CN00814323 A CN 00814323A CN 00814323 A CN00814323 A CN 00814323A CN 1379803 A CN1379803 A CN 1379803A
- Authority
- CN
- China
- Prior art keywords
- alumina
- silicon
- transition state
- particle
- abrasive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 145
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 72
- 239000002245 particle Substances 0.000 claims abstract description 62
- 239000002002 slurry Substances 0.000 claims abstract description 31
- 239000003082 abrasive agent Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 63
- 229960001866 silicon dioxide Drugs 0.000 claims description 63
- 230000007704 transition Effects 0.000 claims description 48
- 229910001593 boehmite Inorganic materials 0.000 claims description 30
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 28
- 239000000843 powder Substances 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000008139 complexing agent Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 239000002612 dispersion medium Substances 0.000 claims 2
- 239000004840 adhesive resin Substances 0.000 claims 1
- 229920006223 adhesive resin Polymers 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 239000000463 material Substances 0.000 description 32
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 28
- 238000001354 calcination Methods 0.000 description 22
- 238000009472 formulation Methods 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000000047 product Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 239000000523 sample Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 239000008187 granular material Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000012010 growth Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000000452 restraining effect Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001238 wet grinding Methods 0.000 description 3
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 2
- 229910002706 AlOOH Inorganic materials 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- PZZYQPZGQPZBDN-UHFFFAOYSA-N aluminium silicate Chemical class O=[Al]O[Si](=O)O[Al]=O PZZYQPZGQPZBDN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000009156 water cure Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/888—Shaping or removal of materials, e.g. etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Abrasive materials comprising silica-coated transitional alumina particles with an average particle size of less than 50 nanometers and a BET surface area of at least 50 m2/gm are useful in CMP processes either in the form of slurries or as fixed abrasives.
Description
The background of invention
The present invention relates to CMP (chemical mechanical planarization) material, specifically, relate to and contain the material that the CMP as the αYang Hualv powder of abrasive material uses.
CMP is the method that is used for preparing semiconductor product very important in extensive electronic applications.Semiconductor device generally is by the copper for example of metal refining in the space between non-conductive structure, removes metal level then, and until exposing non-conductive structure, its complementary space is occupied and makes by metal.Requirement to abrasive material is contradicted each other in many aspects.Abrasive material must can be removed metal, but should remove non-conducting material.Its detachment's efficient must be high, again can not be too fast but remove, so that when reaching desired removal amount, but have little time to stop the removal process.
The CMP method can adopt the form of the slurry of abrasive material in liquid medium to implement, and in slurry except abrasive material, comprise also that generally other have the additive of " chemistry " effect, comprise complexing agent, oxygenant (for example hydrogen peroxide, iron nitrate, Potassium Iodate etc.); Inhibiter is benzotriazole for example; Sanitising agent; And tensio-active agent.But it also can adopt the fixed abrasive material to implement, and wherein abrasive grain is dispersed in and is fixed in the solidified resin base material, and described resin material can be chosen wantonly has the surface that profile is arranged.These fixed-abrasives can use, and need not contain the slurry of abrasive material, and described slurry needs to recycle before reusing, and usually needs purifying.Therefore, the solution that together uses with such fixed-abrasive just only contains the chemical additive of the CMP slurry that before is used for same purposes.
The CMP method can be used for any laminated apparatus that contains metal level and insulator layer, and described metal level and insulator layer deposit on the base material with a certain amount of separately successively, needs then its amount is reduced to uniform thickness and very uniform surfaceness (Ra).CMP is the process that settled layer is reduced to institute's required thickness and planeness.Problem is that the best abrasive material that the removal material is used can stay underproof quite coarse surface, and perhaps material is removed too soon, usually surpasses desired terminating point.And lack selectivity or stay ropy surface with those abrasive materials of medium speed removal material.
In the past, for example gama-alumina and silicon-dioxide can be compromised than the buffing material by using in these competing requirements.This has just reduced removal speed, but can not differentiate the difference between metal and the non-conducting material.Someone advises adopting median size to be about the Alpha-alumina of 100nm, finds that it can preferentially remove metal with respect to non-conducting material discriminatively.Yet unfortunately, its removal effect is too strong again, is easy to form " recessed ", and it is the phenomenon that forms depression in the metal level between adjacent non-conducting material structure.Recessed have disadvantageous effect to semi-conductive performance, therefore thinks very bad.The too strong performance of the removal effect of this Alpha-alumina formulation is enough improved by reducing granularity, yet, for some purposes, need more moderate grinding rate.
Therefore, the abrasive material that demand is such, it can be used for removing metal selectively, and relatively slow making recessedly can be reduced to minimum CMP purposes.
The narration of invention
The invention provides a kind of abrasive material of the CMP of being particularly useful for goods, it comprises the transition state of alumina particle, and described particle has the silicon-dioxide coating, and median size is less than 50nm, and the BET surface-area is greater than 50m
2/ gm.
" transition state of alumina " term formula Al that refers to see service
2O
3Aluminum oxide, but wherein α is not higher than the aluminum oxide of 90 weight % mutually.Therefore, this term just comprises each mixture mutually of aluminum oxide that two or more are represented with alpha, γ, χ, δ, η, κ, θ and ρ.
Under some situation, adding in the CMP formulation that contains the transition state of alumina that the silicon-dioxide coating is arranged has very big benefit up to 50 weight % boehmites, and this percentage ratio is benchmark with the weight of transition state of alumina with silicon-dioxide coating.
The present invention also comprises the method for making the transition state of alumina with silicon-dioxide coating, and it comprises that add-on is lower than 5 weight % aluminum oxide, in the AlOOH in the colloidal sol to boehmite sol adding silicon-dioxide; At 1100-1400 ℃ of temperature drying and calcining mixt, reach a couple of days, become to have the transition state of alumina of silicon-dioxide coating until boehmite conversion; Transition state of alumina with silicon-dioxide coating is ground the formation powder, and the BET surface-area of described powder is at least 50m
2/ gm, median size is less than 50nm.
The present invention also comprises a kind of slurry, and it is to contain transition state of alumina (maybe can contain the boehmite up to 50 weight %) with silicon-dioxide coating and the dispersion liquid that is selected from the additive of oxygenant, dispersion agent, complexing agent, corrosion inhibitor, sanitising agent and composition thereof.
According to the present invention, the present invention also provides the fixed that contains the transition state of alumina with silicon-dioxide coating abrasive material.
The invention provides a kind of preferred CMP method, it comprises the base material that contains metal and non-conducting material with a kind of abrasive polishing, described abrasive material contains the transition state of alumina powder with silicon-dioxide coating, and its alumina content is at least 90 weight %, and the BET surface-area of this aluminum oxide powder is at least 50m
2/ gm, the final particle width of at least 90% particulate is not more than 50nm, 20-50nm for example, final size is no more than 10% greater than the particle of 100nm.For for simplicity, the transition state of alumina powder that will have this size range and surface-area sometimes is called " alumina in Nano level " powder or particle.
The particle of transition state of alumina powder has the silicon-dioxide coating, but understand, term used herein " silicon-dioxide " is except that silicon-dioxide, the combined oxidation that also comprises silicon-dioxide and metal oxide, for example silicate of mullite, alkali-metal silico-aluminate and borosilicate, alkaline-earth metal etc.Like this, pointed " silicon-dioxide " percentage in fact also contains other compositions beyond the silicon-dioxide.
The alumina content of nano-alumina powder is at least 90% of a transition state of alumina, preferably is at least 95%.All the other are silicon-dioxide with a small amount of other are mutually oxidiferous.Calcination process if proceed to end, can form 100% Alpha-alumina, and it is the stable morphology of aluminum oxide.The purpose here is to form transition state of alumina, and it is the result of limited conversion in the calcination process, and calcination process is in check, to guarantee making at least 10%, and preferably at least 40%, the non-α phase of 10-70% most preferably.The purpose here is that also the transition state of alumina particle is not significantly to reunite, so separate easily.
When after this " width " of described nano-scale aluminum oxide particle being discussed, understand, except context clearly illustrates is other the meaning, it is meant and the vertical maximum sized number average value of particle longest dimension, in practice, how many outward appearances of finding nano-scale aluminum oxide particle is block, makes particle shaft size such as look like.Testing method is based on the scanning or the transmission electron microscope of use, JEOL 2000SX instrument and so on.
Collosol and gel especially applies the progress of crystal seed sol-gel method, makes it possible to make the aluminum oxide of microlitic structure, the size of its final crystal grain (often being called microcrystallite), and being about 0.1 micron is 100nm.
At the United States Patent (USP) 4 of authorizing people such as Bauer, 657, in 754, disclosed the sol-gel alumina from adding crystal seed of drying has been calcined, make at least a portion change into α-phase, carefully during calcining, do not cause excessive sintering or particle growth, then dried product is ground into α particulate powder.This just can guarantee to take place few sintering very.Just only need broken a small amount of sintered bonds thing when pulverizing like this, rather than broken final particle.Therefore can be that the situation of braised form is calcined to finish conversion just with product.This remains difficulty and expensive operation, and in fact is subjected to the restriction of Alpha-alumina final size (100nm) in the product.But such particle is more much bigger than nano-scale aluminum oxide particle of the present invention.
In patent application EP554908, disclosed the aluminum oxide that has the silicon-dioxide coating by formation, calcining is made at least 95% αYang Hualv in the alumina in Nano level size range then.But such alpha alumina particles is for the used CMP of goods of the present invention, and its effect of removing material is too strong.
USP5693239 has described the method on a kind of smooth metal works surface, and wherein abrasive ingredients is a αYang Hualv and the mixture of being permitted any, aluminium hydroxide, amorphous alumina or soft silica in the transition state of alumina.
United States Patent (USP) № 4956015 has disclosed the polishing composition that contains αYang Hualv and boehmite.
But above-mentioned document does not all disclose the formulation of the transition state of alumina abrasive material with silicon-dioxide coating of uniqueness of the present invention, does not disclose the CMP method of using them yet.
Transition state of alumina abrasive powders with silicon-dioxide coating can use with slurry form, when polishing pad is being wanted to move on the polished surface, this slurry is applied on this surface.Like this according to an embodiment, the present invention includes a kind of CMP method, one of them deformable polishing pad with want polished surface to contact under the situation to move, apply slurry simultaneously, this slurry contains the transition state of alumina powder, its alumina particle has the silicon-dioxide coating, and the BET surface-area of described alumina powder is at least 50m
2/ gm, transition state of alumina content are at least 90 weight %, and the final particle width of at least 90% particulate is 10-50nm, and final size is less than 10% greater than the particle of 100nm.
According to another embodiment, use the fixed abrasive material to come the smooth surface that will carry out the CMP processing, described fixed abrasive material is the transition state of alumina powder that is scattered in the solidified adhesive material, described transition state of alumina particle has the silicon-dioxide coating, and the BET surface-area of described powder is at least 50m
2/ gm, transition state of alumina content are at least 90 weight %, and wherein the final particle width of at least 90% particulate is less than 50nm, preferred 10-50nm, and final size is less than 10% greater than the particle of 100nm.But bond/abrasive emery wheel surface, for example wheel rim or the preferably coating on its major surfaces.It also can be the formulation that is scattered in the abrasive grain in the curable adhesive in addition, with the coating form be deposited on soft sheet material for example cover, coil or with plane surface on, then tackiness agent is solidify to form grinding tool.Before tackiness agent solidified, the surface of bond/abrasive layer can be slick, perhaps can form such surface tissue, and this structure contains the order of many bodies arbitrarily or repeatability.Such surface is said to be and is " customization processing ", because the needed any pattern of substrate surface that their can be promptly being configured as of being scheduled to have purposes and it will apply up.
The preparation of transition state of alumina
Can make transition state of alumina particulate appropriate method comprises, be lower than under the temperature that boehmite conversion becomes Alpha-alumina, with a kind of material that forms restraining mass around boehmite particles specifically is that silicon-dioxide is scattered in the boehmite gel, the add-on of described material will be enough to suppress growing up of granularity, then, in that most of at least aluminum oxide is changed under the temperature of transition state of alumina is dry and calcine gel, the form of gained transition state of alumina is loose granule, and wherein final particulate granularity is about 10-50nm.The BET surface-area of goods is generally 30-60m like this
2/ gm.
These granule are described to " loose ", are meant that they can relatively easily pulverize, and revert to width average less than about 50nm, BET surface-area above 50m
2The basic granules of/gm.
Calcining should not be in and particle grown up carry out under a lot of or excessive agglomerating temperature, otherwise it is extremely difficult that this will inevitably cause them to be separated into ultimate particle, if not impossible words.In fact the restraining mass coating makes the sintering of this product only betide about 1450 ℃ or higher temperature, and the calcining temperature that adopts usually is preferably below 1400 ℃.
Boehmite with silicon-dioxide coating carries out incinerating time and actual calcining temperature and is together determining conversion journey to the higher transition phase of aluminum oxide.At boehmite in the conversion process of alumina transition phases, for example χ, γ, η and ρ for example α, κ, δ and the coexistence of θ phase alumina mutually that might form with comparatively high temps mutually of the phase that lesser temps forms, during time lengthening under the high temperature, the ratio of α, δ and especially θ phase alumina can increase.But preferred principal phase is α (still being lower than 90%), γ, δ and θ phase alumina.
Think to form very thin coating near the boehmite particles of blocking material in gel, its can the migration of inhibited oxidation aluminium by granule boundary, change into the transitional alumina phase time at particle thus, stop or suppress at least largely the particulate growth.Therefore, the result has just formed the transition state of alumina particle, and its particle diameter is about the granularity in the initial boehmite gel.
Preferred blocking material most convenient ground is silicon-dioxide, and still, the material of other glass formation property that can work in the above described manner also within the scope of the invention.These can comprise the boracic material, for example borosilicate etc.In order to realize purpose of the present invention, emphasis point is the easiest acquisition and the wieldy material of discussing based on silicon-dioxide.
When silicon-dioxide when the blocking material, add-on preferably is about 0.5-10 weight %, is benchmark with the weight of aluminum oxide in the gel.Usually preferably silicon-dioxide is scattered in the colloidal sol or gel of boehmite, makes the dispersion fullest between each component.
Boehmite can be about tens of nm or following any boehmite with present commercially available its fineness of dispersion.Clearly, preferably adopt the constant boehmite of fine particle size because they do not have that some other product contains usually be difficult to the dispersive granule.
It seems silicon-dioxide may with the surface interaction of boehmite particles, the chances are forms silico-aluminate, and this can slow down to for example conversion and these particulate growths subsequently of αYang Hualv of comparatively high temps stable phase.Because particle growth is suppressed mechanism, does not just have what reason that calcining is remained on low temperature.Can obtain transformation efficiency faster with regard to allowing the higher calcining temperature of employing like this, can not produce adverse influence simultaneously the particle diameter of alpha-crystal.
Silicon-dioxide is joined the gelation of boehmite sol and collosol intermixture, is an important preferred feature of the present invention, because this can realize disperseing fully and uniformly.Silicon-dioxide is attached on the boehmite particles that is the colloidal state size substantially in addition, so the further growth of boehmite is subjected to very big inhibition.
When the conversion to the transition state of alumina phase reaches desired degree, particle is a loose form of ultimate particle, the width of ultimate particle is about 50nm or following, under scanning electronic microscope, present the form of a series of bar-shaped or bunch shape granules, or be the unitary coarse grid that contains ultimate particle sometimes.These loose granule or agglomerate for example with wet-milling or dry grinding just than being easier to be broken into individual particle.Owing to form the silica containing phase that stops in the grain boundary, they are relatively easily broken.The result has just formed the transition state of alumina product of number average particle width less than about 50nm.In the wet-milling process,, form a small amount of hydrated aluminum oxide, for example hibbsite through regular meeting by the surface hydrolysis of aluminum oxide.Such hydrate also can change into aluminum oxide in calcination process, for realizing purpose of the present invention, aluminum oxide that this surface modification is crossed and unmodified Alpha-alumina are not made any distinction between.
The inventive method can form new thin even-grained transition state of alumina particle.Therefore this method also can provide such aluminum oxide fine powder, and its BET surface-area is at least 50m
2/ gm preferably is at least 100m
2/ gm, wherein at least 90% total weight of powder is provided by transition state of alumina, and wherein at least 90% particulate width is not more than 50nm, preferred 10～50nm, final particle width is less than 10% greater than the particle of 100nm.Measure with ultra-thin sample, specifically is to draw the percentage of final particle width greater than the occupied total visual field of the particle of 100nm by microscope by electronics (scanning or transmission) for these oarse-grained percentage.
All the other substances content of aluminum oxide powder are mainly provided by restraining mass, and this restraining mass comprises silica containing material for example mullite or aluminium silicate salt, and it can account for 10% more than of gross weight, but preferably are lower than about 8 weight %.But when operating with above-mentioned preferred a small amount of silicon dioxide gel, transition state of alumina accounts for 95 weight % of powder usually.
Should carefully control the content of silicon-dioxide, because if add too much, its meeting and aluminum oxide bulk reaction.And add very little just limit alpha-particle growth effectively.Find actually, about 0.5-10 weight % of the solids content of gel, preferably about 1-8 weight % should be a silicon-dioxide.Therefore the content of silicon-dioxide should be less than about 10 weight % in the final product, preferably should be less than about 8 weight %, most preferably less than about 5 weight %.In majority operation, finding to add 2-8% silicon-dioxide is that effectively the percentage ratio here is with SiO
2The meter, and with the aluminum oxide gross weight (with Al
2O
3Meter) be benchmark.
The adding form of silicon-dioxide can be a colloidal silica, i.e. silicon dioxide gel or can to discharge such colloid under reaction conditions be the compound of colloidal sol, and later silicon dioxide gel forms coating around alumina particle.Such compound can comprise for example positive tetraethyl orthosilicate of organosilane and some metal silicate.Alkalimetal silicate is improper usually.The granularity of the solation of silicon-dioxide should be preferably similar to boehmite at least, or preferably less than boehmite, promptly about at the most several nm.
The silicon-dioxide that adds solation in boehmite sol can guarantee silicon-dioxide the most effective the most even distribution, so just can use minimum.
Before the gel calcining, it can be dry at a lower temperature, and calcining reaches two days or a couple of days in about 800-1300 ℃ temperature usually, but is generally 12-24 hour.The water in the gel is driven in calcining away, promotes the formation of silica sphere restraining mass, and the beginning boehmite is to the conversion of transition state of alumina phase.In the present invention, preferred calcining temperature is about 1100-1400 ℃, owing to have silicon-dioxide, and slightly long at the aluminum oxide that the required time ratio of this temperature is so usually.Lower limit calcining in this temperature range can make particle form the trend minimum of aggregation.
During calcining, very important in the soaking time of calcining temperature.Slowly be warmed up to calcining temperature, just can adopt shorter soaking time under calcining temperature, described slow intensification usually is a kind of function of the equipment that uses.Usually rotary oven only requires a very short time and just can arrive desired temperature, and the heating-up time of box-type furnace flower is much longer.Therefore, but in order to control and duplication of production, usually preferably use rotary oven.Large sample needs the longer time to reach uniform body temperature than small sample in addition.Considered above-mentioned factor, in fact temperature/the time-program(me) of Shi Yonging is determined by particular case.
Pulverizing can adopt routine techniques ball mill method for example wet or that do to finish.In addition, mullite or other manosil AS salt faces that also can utilize an endoparticle boundary to exist make pulverizing easier.Like this have the hot expansion property different mutually usually with aluminum oxide, behind too high and cold cycle, can form expansion stress at product, broken in such frictional belt.Sometimes, such stress self just is enough to cause fragmentation.Also can make these silica containing borders produce chemical stress by hot-water cure or with alkali or acid treatment product.But, more generally be that such heat or chemistry are pulverized and still needed certain follow-up machinery to grind, so that be broken into the powder of number average particle width less than 50nm fully.
Think that the specific characteristic of the very fine-grained powder that obtained by aforesaid method is both had 50m
2More than/the gm, more frequent is 120m
2The high surface area of/gm has very narrow size-grade distribution again, and promptly the following particulate final size of 10 weight % is greater than 100nm.Owing to grind and generally to adopt low pure αYang Hualv mill to be situated between to carry out, think that most of observed particle greater than 100nm is likely that the friction that is situated between by mill forms, rather than form by the transition state of alumina of boehmite conversion acquisition.Generally have much wide size-grade distribution and grind product that big alpha alumina particles obtains, and the particle of a large amount of particle diameters greater than 100nm arranged.Therefore, being 50nm even the alpha alumina particles of being made by art methods can be ground to form median size, and centering on the distribution of this median size, also must be to have the granularity more than 10% to surpass 100nm.
The final grinding that is used for obtaining nano-scale aluminum oxide particle preferably uses low pure αYang Hualv (about 88% αYang Hualv) or zirconium white mill to be situated between." zirconium white " mill Jie is meant and comprises that the mill made from zirconium white is situated between that described zirconium white is stable with for example additives such as yttrium oxide, rare earth elemental metals oxide compound, magnesium oxide, calcium oxide.It is experimental that above-mentioned preferred mill is situated between, the broken behavior of these mills Jie in process of lapping but its reason is considered to.High purity aluminium oxide mill is situated between and brokenly in process of lapping forms big fragment, and different is, low purity oxygen aluminium mill is situated between and generally forms micron-sized particle, and zirconium white mill Jie thing is very tough, and they almost do not form fragment.
The test of CMP suitability
In the manufacturing processed of semiconductor device, routine is many different conductions of deposition and a non-conducting material layer on silicon wafer substrate.Sedimentary layer often is uneven, needs " leveling ", forms the alap surface of Ra (tolerance of surfaceness).
In typical C MP operation, task is when removing material efficiently, stays flawless as far as possible surface.Though efficient is important, control is just more important, because the thickness of settled layer is measured with dust, when removal speed is too big, will be difficult to accurately stop when reaching desired layer thickness.Therefore, stable and controlled removal has been exactly a target.
When sedimentary material covers when having etched pattern in the above for example the sedimentary in advance layer of circuit being gone up, the stability of described removal is also very important.When tectum was removed to the degree of sedimentary etch layer in advance, further abrasion (promptly removing) just should not continue, and the filling part between all the other etch structures of layer is in advance no longer further denuded, and this further erosion process is called " recessed ".If the removal selectivity between original layer and the tectum is obvious, and tectal removal speed height, recessed possibility is just big, this can cause very irregular surface certainly, also will deposit other layers on this surface subsequently.
When evaluation one specific abrasive material can be used for the possibility of CMP, we had set up 2 class testing methods.First kind of selectivity that is intended to estimate removal, second kind is intended to estimate recessed possibility.
Selectivity test is carried out on having the sample of wanting smooth surface of being made by copper layer or silicon dioxide insulating layer (below be called " oxide compound " layer).A kind of sample in back is by deposition 10000 dusts (10 * 10 on the semiconductor grade silicon chip that thoroughly cleaned
-7M) oxide skin and making.This just removes speed for assessment the oxide compound sample is provided.With this oxide skin sample 400 dusts (4 * 10 on leveling is after-applied
-8M) titanium adhesion layer is 10000 dusts (10 * 10 subsequently
-7M) copper layer.This copper surface is used for assessing the removal speed of copper.
Recessed test is carried out on the silicon chip sample that has provided above-mentioned oxide skin, but this oxide skin is 16,000 dusts (16 * 10
-7M) thick.This oxide skin is through leveling, and etching then forms 2,200 dusts (2.2 * 10
-7M) dark pattern.Deposition 10000 dusts (10 * 10 on this etch layer
-7M) copper layer.This being flattened of copper surface until exposing oxide surface, is estimated the recessed degree of depth that forms then.
Embodiment 1-selective evaluation
Two kinds of alumina slurries contrasts of buying have been estimated CMP slurry that the present invention contains 95% transition state of alumina (wherein αYang Hualv accounts for 2%) and 5% silicon-dioxide and removed the copper that the employing above-mentioned steps makes and the performance of oxide compound on samples.
In boehmite sol, add silicon dioxide gel and make slurry of the present invention, the weight ratio that add-on will be enough to form silicon-dioxide and aluminum oxide is 5: 95, with the colloidal sol drying, forms powder, then powder was calcined 10 hours at 1170 ℃, again 1195 ℃ of calcinings 10 hours.The BET surface-area of burnt material is 45-50m
2/ gm.Then, powder is carried out wet-milling with 0.8mm zirconium white mill Jie in the Drais shredder, reach about 90m until surface-area
2/ gm.The slurry sediment that forms is concentrated into 10% solid, with nitric acid the pH value is adjusted to about 3.5.This slurry filters by the strainer of 10 microns of a series of Bauers and 5 microns.
Be that slurry (1000gm) and 250ml 30% superoxol of 10 weight % and 4gm benzotriazole and deionized water mix with above-mentioned solids content, make 4000gm CMP slurry of the present invention.
First kind of control sample (contrast-1) is the αYang Hualv of buying, and median size is about 100nm.It, is made by United States Patent (USP) № 4657754 described methods available from Saint-Gobain industry pottery art company with production number SL 9245.Second kind of control sample (contrast-2) is available from Buehler company limited with article number " Product CodeMasterprep ".It is considered to mainly is gama-alumina.
Every kind of slurry all forms like this: with the 2000gm solids content is that 10% alumina slurry mixes with 250ml 30% superoxol and 4gm benzotriazole, adds deionized water then, makes the slurry that gross weight reaches 4000gm.
On the polishing machine of laboratory, use has been tested this three kinds of slurries available from the perforation polishing pad of the IC1400 lamination of Rodel Inc. then.Polish pressure 34.5KPa (5psi) is applied on the polishing pad that moves with respect to base material, and the surface velocity of base material is about 1.2m/ second, and slurry flow from the teeth outwards is 100ml/ minute.
To every kind of slurry all is polish copper and these two kinds of base materials of silicon-dioxide, measures the removal speed to these two kinds of materials respectively.The result is as shown in the table.
| Aluminum oxide | The removal speed of copper | ????SiO 2Removal speed | Selectivity |
| Contrast 1 | 640 dusts/minute | 90 dusts/minute | ????7 |
| Contrast 2 | 590 dusts/minute | 340 dusts/minute | ????1.7 |
| The present invention-1 | 212 dusts/minute | 38 dusts/minute | ????6 |
As can be seen from the above, the αYang Hualv product has very big selectivity, but it is also very big to remove speed.The removal speed of gamma-alumina product is not too big, but selectivity is also little.It is littler that alumina slurry of the present invention is removed speed, can keep big selectivity simultaneously.
Adopt same technology, estimated the selectivity of same CMP slurry for tungsten and silicon-dioxide.The removal speed of tungsten and silicon-dioxide be respectively 402 and 38 dusts/minute, correspondingly, tungsten is about 10 with respect to the selectivity of silicon-dioxide.
The evaluation that embodiment 2-is recessed
Proof 3 kinds of same aluminum oxide in embodiment 1 are then tested recessed situation in the above described manner.Testing installation is exactly described in the embodiment 1, and the material of test that different is deposits the silicon-dioxide base material through etching and leveling of copper above being.End point is the initial moment that copper and silicon-dioxide base material are all seen.Use is available from the contourgraph test " recessed " of Tencor company.Tested the recessed degree of depth between the adjacent feature, the height of this feature is different, is the 5-45 micron.
In handling, CMP tested two kinds of identical " features ".A use is designated as the formulation processing of " contrast-1 " in embodiment 1, another use is designated as the formulation of " the present invention-1 " and handles in embodiment 1.Test-results as illustrated in fig. 1 and 2.In every cover figure, " a " figure is the vertical view (line of paler colour) of an explanation through " feature " of the silica matrix of leveling, wherein has the foursquare copper of piece still to keep after getting rid of the upper copper settling.Use the CMP formulation that copper is denuded to silica matrix.Among " a " figure in each figure, single line passes described feature, by the deepest part of recessed feature and the highest part of matrix on every side.In " b " figure, the line in " a " figure forms the profile of feature.The position of the arrow indication maximum normal distance on " a " and " b " two figure.In Fig. 1 series (contrast), the vertical range between the arrow is 65.5nm, and the respective distance in Fig. 2 series is 37.7nm.With CMP formulation of the present invention, not only amount of recess reduces greatly, and when using CMP formulation of the present invention, the profile of feature is also very clear shown in " b " figure.This also can find out from " a " figure significantly.
Can be clear that thus the recessed degree that obtains with goods of the present invention is light more than usefulness prior art formulation.
Embodiment 3 mixtures
In the present embodiment, the prior art aluminum oxide with the same mixture that contains in contrast.Having tested the present invention is that the transition state of alumina of silicon-dioxide coating and the mixture of boehmite are arranged, and some formulations of this this test are proof formulations in embodiment 1, and test is carried out in the same way.Under every kind of situation, slurry contains the transition state of alumina that 1.5 weight % boehmites and 1 weight % the present invention have the silicon-dioxide coating, its prescription and preparation method and identical described in the embodiment 1 (being called the present invention-1 here); Be used for the prior art αYang Hualv (being also referred to as contrast-1 in this embodiment) of contrast-1 formulation with 1 weight %; Be used for the gamma-alumina (being also referred to as contrast-2 in this embodiment) of contrast-2 formulation with 1 weight %.Tested the selectivity of described these formulations for tungsten metal and silicon-dioxide.The result who obtains is as shown in the table.
| Aluminum oxide | The removal speed of tungsten | The removal speed of silicon-dioxide | Selectivity |
| Contrast-1 | 545 dusts/minute | 72 dusts/minute | ????7.6 |
| Contrast-2 | 540 dusts/minute | 71 dusts/minute | ????7.6 |
| The present invention-1 | 640 dusts/minute | 24 dusts/minute | ????27 |
Can understand that from these data the selectivity and the removal speed of the mixture of boehmite is arranged, in addition better than only containing silica modified transition state of alumina as the formulation of unique abrasive ingredients.
Claims (10)
1. abrasive material that is used for the chemical mechanical planarization goods, it contains the transition state of alumina particle, and described particle has the silicon-dioxide coating, and median size is less than 50nm, and the BET surface-area is greater than 50m
2/ gm.
2. abrasive material as claimed in claim 1, wherein granularity is less than 10 volume % above the transition state of alumina particle of 100nm.
3. abrasive material as claimed in claim 1, the weight of wherein said silicon-dioxide coating account for below the 8 weight % of transition state of alumina particulate weight.
4. abrasive material as claimed in claim 1, it also contains boehmite, and wherein the content of boehmite is the 1-80 weight % of abrasive material total amount.
5. abrasive material as claimed in claim 1, it is a pulp-like, except the transition state of alumina with silicon-dioxide coating is arranged, also contain dispersion medium and the additive that is selected from oxygenant, dispersion agent, complexing agent, corrosion inhibitor, sanitising agent and composition thereof in this slurry.
6. abrasive material as claimed in claim 4, it is a pulp-like, except the transition state of alumina and boehmite with silicon-dioxide coating arranged, also contain dispersion medium and the additive that is selected from oxygenant, dispersion agent, complexing agent, corrosion inhibitor, sanitising agent and composition thereof in this slurry.
7. grinding tool that contains the fixed abrasive material, it contains the described abrasive material of claim 1, and this abrasive material is dispersed in the solidified adhesive resin.
8. grinding tool as claimed in claim 5, described grinding tool are coated abrasive tool.
9. grinding tool as claimed in claim 6, described coated abrasive tool has the surface that shape and profile are arranged.
10. chemical mechanical planarization method, wherein deformable polishing pad with want polished surface to contact under the situation to move, contact with slurry simultaneously, this slurry contains the transition state of alumina powder, the alumina particle of this powder has the silicon-dioxide coating, and the BET surface-area of this powder is at least 50m
2/ gm, alumina content are at least 90 weight %, and wherein at least 90% is transition state of alumina, and wherein the final particle width of at least 95% particulate is 10-50nm, and final size is less than 5% greater than the particle of 100nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41947799A | 1999-10-15 | 1999-10-15 | |
| US09/419,477 | 1999-10-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1379803A true CN1379803A (en) | 2002-11-13 |
Family
ID=23662444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00814323A Pending CN1379803A (en) | 1999-10-15 | 2000-08-30 | Improved CMP products |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1228159A1 (en) |
| JP (1) | JP2003512501A (en) |
| KR (1) | KR20020042869A (en) |
| CN (1) | CN1379803A (en) |
| AU (1) | AU754328B2 (en) |
| BR (1) | BR0014755A (en) |
| CA (1) | CA2383504A1 (en) |
| MX (1) | MXPA02003753A (en) |
| WO (1) | WO2001029145A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921057A (en) * | 2022-06-02 | 2022-08-19 | 江苏长电科技股份有限公司 | Epoxy plastic packaging material composition, preparation method and application |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5137521B2 (en) * | 2006-10-12 | 2013-02-06 | 日揮触媒化成株式会社 | Konpira sugar-like sol and process for producing the same |
| FR2928916B1 (en) | 2008-03-21 | 2011-11-18 | Saint Gobain Ct Recherches | FADE AND COATED GRAINS |
| KR101208896B1 (en) * | 2012-05-24 | 2012-12-06 | 주식회사 대한세라믹스 | Manufacturing method of alumina abrasive grains and alumina abrasive grains manufactured by the method |
| JP7183863B2 (en) * | 2018-03-13 | 2022-12-06 | Jsr株式会社 | Chemical mechanical polishing composition and chemical mechanical polishing method |
| JP7167557B2 (en) * | 2018-08-30 | 2022-11-09 | Jsr株式会社 | Alumina abrasive grain for chemical mechanical polishing and method for producing the same |
| JP7167558B2 (en) * | 2018-08-30 | 2022-11-09 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU650382B2 (en) * | 1992-02-05 | 1994-06-16 | Norton Company | Nano-sized alpha alumina particles |
| US5693239A (en) * | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
-
2000
- 2000-08-30 CA CA002383504A patent/CA2383504A1/en not_active Abandoned
- 2000-08-30 MX MXPA02003753A patent/MXPA02003753A/en not_active Application Discontinuation
- 2000-08-30 WO PCT/US2000/023797 patent/WO2001029145A1/en not_active Application Discontinuation
- 2000-08-30 BR BR0014755-9A patent/BR0014755A/en not_active Application Discontinuation
- 2000-08-30 AU AU70900/00A patent/AU754328B2/en not_active Ceased
- 2000-08-30 CN CN00814323A patent/CN1379803A/en active Pending
- 2000-08-30 EP EP00959610A patent/EP1228159A1/en not_active Withdrawn
- 2000-08-30 JP JP2001531935A patent/JP2003512501A/en active Pending
- 2000-08-30 KR KR1020027004829A patent/KR20020042869A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921057A (en) * | 2022-06-02 | 2022-08-19 | 江苏长电科技股份有限公司 | Epoxy plastic packaging material composition, preparation method and application |
| CN114921057B (en) * | 2022-06-02 | 2023-06-13 | 江苏长电科技股份有限公司 | Epoxy plastic package material composition, preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003512501A (en) | 2003-04-02 |
| MXPA02003753A (en) | 2002-08-30 |
| EP1228159A1 (en) | 2002-08-07 |
| CA2383504A1 (en) | 2001-04-26 |
| WO2001029145A1 (en) | 2001-04-26 |
| AU754328B2 (en) | 2002-11-14 |
| KR20020042869A (en) | 2002-06-07 |
| BR0014755A (en) | 2002-09-24 |
| AU7090000A (en) | 2001-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100396749C (en) | CMP products | |
| KR101607883B1 (en) | Abrasive particles having particular shapes and methods of forming such particles | |
| CN1667026B (en) | Polishing slurry, method of producing same, and method of polishing substrate | |
| US6645265B1 (en) | Polishing formulations for SiO2-based substrates | |
| JP4472747B2 (en) | Cerium oxide abrasive and polishing slurry | |
| JP2000336344A (en) | Abrasive | |
| WO1999035089A1 (en) | Alumina powder, process for producing the same and polishing composition | |
| CN1944496B (en) | Polishing slurry, method of producing same, and method of polishing substrate | |
| TW201631109A (en) | Polishing composition and manufacturing method of substrate using same | |
| TW200418966A (en) | A slurry composition and a polishing method using the same | |
| CN1379803A (en) | Improved CMP products | |
| KR100328308B1 (en) | Composition for polishing metal on semiconductcr wafer and method of using same | |
| CN100445343C (en) | Slurry for cmp and method of polishing substrate using same | |
| KR100679460B1 (en) | Cerium oxide and sheet-shaped mica complex abrasive material and method for manufacturing the same | |
| JP6792554B2 (en) | Polishing abrasive grains, polishing slurry and hard brittle material polishing method, and hard brittle material manufacturing method | |
| KR100697304B1 (en) | Sheet-Shaped Kaolin and Cerium Oxide Complex Abrasive Material and Method for Manufacturing the same | |
| CN1237141C (en) | Grinding milk and its application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |