CN1377079A - Composite material and application thereof - Google Patents

Composite material and application thereof Download PDF

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Publication number
CN1377079A
CN1377079A CN02119922A CN02119922A CN1377079A CN 1377079 A CN1377079 A CN 1377079A CN 02119922 A CN02119922 A CN 02119922A CN 02119922 A CN02119922 A CN 02119922A CN 1377079 A CN1377079 A CN 1377079A
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Prior art keywords
fin
semiconductor element
oxide
copper
composite material
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CN02119922A
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CN1197151C (en
Inventor
近藤保夫
金田润也
青野泰久
阿部辉宜
稻垣正寿
斋藤隆一
小池义彦
荒川英夫
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Hitachi Ltd
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Hitachi Ltd
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Abstract

The invention discloses a composite material that possesses low heat expansion ratio, high heat conduction ratio and good plastic workability. The said material consists of metal and non-organic particle whose thermal expansion coefficient is smaller than that of the said metal. The characteristics are that the mode of dispersed non-organic particles (exprssed in the particle area in a cross section) makes 95% or more of particles form a connected aggregation with complex configuration. The said composite material contains 20-80% volume of cupreous oxide and copper as the remainder. Under the region of room temperature to 300 deg.c, the thermal expansion coefficient is 5X10 to the power -6 -14X10 to the power -6 per deg.c, the heat conduction ratio is 30-325 W/m.k. The said composite material is suitable for making radiating fins of semiconductor parts and dielectric pieces of electrostatic attractors.

Description

Composite material and application thereof
Technical field
The present invention relates to have the composite material of low coefficient of thermal expansion and high thermal conductivity and the production method of described composite material, but also relate to for example application in semiconductor device of described composite material.
Background technology
Power electronics comprises and relates to the power electronic device that electrical power and electric energy are changed and controlled, and the technology with the power electronic device of break-make pattern work also comprises the application technology that relates to energy conversion system.
The conversion of electrical power needs various power semiconductors with switching characteristic.Actual these semiconductors that use comprise rectifier diode (having a pn knot that only has electric current to flow in a direction), thyristor, bipolar transistor, and MOSFET (combination with a plurality of pn knots).Recently the semiconductor of exploitation comprises that igbt (IGBF) and response gate signal carry out the grid-control of switch and end thyristor (GTO).
These power semiconductors can generate heat when energising.Along with the increase of electric weight and speed, described semi-conductive caloric value can be bigger.Because the deterioration and the lost of life appear in heating, the radiator that prevents that himself and adjacent regions temperature from raising should be installed in the described semiconductor in order to prevent described semiconductor.Usually the material as radiator is a copper, and it is cheap and thermal conductivity is high (393W/m).Unfortunately, copper is not suitable for the radiator of power semiconductor, because the coefficient of thermal expansion of copper is up to 17 * 10 -6/ ℃, thereby, can not be 4.2 * 10 with coefficient of thermal expansion -6/ ℃ silicon welded together well.A method that addresses this problem is to adopt coefficient of thermal expansion molybdenum close with silicon or tungsten to make radiator, perhaps inserts molybdenum or tungsten between radiator and semiconductor element.
Power semiconductor is different with the electronic semi-conductor element.The latter is an illustration with the integrated circuit of being made up of the integrated electronic circuit that forms on single semiconductor chip (IC).According to its function, electronic semi-conductor's element is divided into memory element, logic element, microprocessor etc.The problem that relates to nearest electronic semi-conductor's element is heating, and when degree of integration and speed of service increase, caloric value increases.What is worse, lost efficacy and deterioration in order to prevent, the independent singly level Hermetic Package of electronic semi-conductor's element quilt is so that and isolated from atmosphere.Extensively the encapsulation of adopting is ceramic packaging (wherein, each semiconductor element all is fixed on the pottery by chips welding) and Plastic Package (employing plastic seal).A new development of satisfying high reliability and high-speed cruising requirement is that the multichip module of a plurality of semiconductor elements (MCM) is installed on single substrate.
During the structure plastic package, the terminal of semiconductor element wherein is connected with lead frame by welding lead, and whole assembly adopt plastic seal.For solving the obtained latest developments of ever-increasing heating problem is that wherein lead frame plays the packaging part of thermolysis or the packaging part of the radiator that is used to dispel the heat wherein is installed.Lead frame or the radiator that is used to dispel the heat adopt the copper production of high thermal conductivity usually.Unfortunately, can expect to break down, reason is that the coefficient of thermal expansion difference of copper and silicon is bigger.
On the contrary, during the structure ceramic package, semiconductor element places on the ceramic substrate with printing wiring thereon, and whole assembly adopts metal or ceramic shield sealing.Ceramic substrate has adopted the Cu-Mo of radiator effect or Cu-W composite material or kovar alloy to make back boxing.Requirement can have low coefficient of thermal expansion with the low production cost manufacturing, the ceramic material of high heat conductivity and good machinability.
MCM comprises having metal or the ceramic substrate that forms film wiring thereon, and a plurality of fixing thereon semiconductor elements (with the nude film form) hold the ceramic packaging and the seal closure of said elements.Heat radiation if desired, described packaging part can be equipped with radiator or radiating fin.Metal substrate adopts copper or aluminium manufacturing.The advantage of these two kinds of metals is that thermal conductivity is good, but shortcoming is the coefficient of thermal expansion height, and this can cause the matching variation with semiconductor element.Therefore, the substrate with MCM of high reliability adopts silicon or aluminium nitride (AlN) to make.The radiator that welds together with ceramic package should adopt the thermal conductivity height and the low made of coefficient of thermal expansion, so that realize good coupling with encapsulating material.
As mentioned above, all semiconductor device all can generate heat at run duration, and, if heat is accumulated, also can break down.Therefore, good heat-conductivity need be had so that the radiator that dispels the heat.Directly or by the indirect radiator that welds of insulating barrier not only should have high thermal conductivity with semiconductor element, but also should have low coefficient of thermal expansion, so that realize matched well with semiconductor element.
Main semiconductor element is based on Si or GaAS, and the thermal coefficient of expansion of these two kinds of materials is for being respectively 2.6 * 10 -6-3.6 * 10 -6/ ℃ and 5.7 * 10 -6-6.9 * 10 -6/ ℃.On coefficient of thermal expansion, comprise AlN, SiC, Mo, W and Cu-W in the known materials suitable with these two kinds of materials.When being used for radiator separately, the thermal transmission coefficient of above-mentioned various materials and thermal conductivity can not be controlled as requested.The machinability difference of these materials and production cost height.Japan Patent discloses flat 8-78578 and has proposed a kind of Cu-Mo sintered alloy.Japan Patent discloses flat 9-181220 and has proposed a kind of Cu-W-Ni sintered alloy.Japan Patent discloses flat 9-209058 and has proposed a kind of Cu-SiC sintered alloy.Japan Patent discloses flat 9-15773 and has proposed a kind of Al-SiC composite material.Change if respectively constitute the thing ratio in these traditional composite materials, then its thermal transmission coefficient and thermal conductivity can in very large range be adjusted.Yet the plastic working of above-mentioned material is poor, thereby is difficult to be processed into thin plate, and needs a lot of procedure of processings.
An object of the present invention is to provide have low coefficient of thermal expansion, the composite material of high thermal conductivity and good plastic working, the semiconductor device that adopts described composite wood to make is provided, be provided for the radiator of described semiconductor device, a kind of electrostatic attraction device is provided, and a kind of dielectric piece that is used for described electrostatic attraction device is provided.
Disclosure of the Invention
First aspect of the present invention is a kind of composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal, when it is characterized in that disperseing described inorganic particulate, should make 95% or more particle (size with the particle area on the cross section is represented) form the aggregation that connects with complex configuration.
Second aspect of the present invention is a kind of composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal, it is characterized in that at 100 μ m 2Cross section on the number of described inorganic particulate of individualism be less than or equal to 100, remaining particle distributes with the aggregate form with complex configuration that connects.
The 3rd aspect of the present invention is a kind of composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal, it is characterized in that the Vickers hardness of described inorganic particulate is less than or equal to 300.
The 4th aspect of the present invention is a kind of composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal, the thermal coefficient of expansion of described composite material is in 20-105 ℃ scope, its recruitment, average out to increases 0.025-0.035ppm/ ℃ from the every W/mk of 20 ℃ value.
The 5th aspect of the present invention is a kind of composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal, it is characterized in that the form dispersed and distributed of described inorganic particulate with the aggregation that connects, described aggregation is the elongation shape along the plastic working direction.
The 6th aspect of the present invention is a kind of composite material that is made of the oxide particle of copper and copper, when it is characterized in that disperseing the oxide particle of described copper, should make 95% or more particle (the area numerical table with particle in the cross-sectional area shows) form the aggregation that connects with complex configuration.
The 7th aspect of the present invention is a kind of fin that is used for semiconductor device that adopts described composite material manufacturing.
The 8th aspect of the present invention is a kind of fin that is used for having on its of semiconductor device nickel coating.
The 9th aspect of the present invention be a kind ofly to comprise a plurality of dielectric substrate and be fixed on the semiconductor device of a plurality of semiconductor elements on each described dielectric substrate, and the conductive layer of the upper and lower surface of each described dielectric substrate by being formed at described dielectric substrate is directly connected in described fin.
The of the present invention ten aspect is a kind of semiconductor device that comprises the dielectric substrate with fin and be fixed on the semiconductor element on the described dielectric substrate, wherein, described fin be the of the present invention the 7th or eight aspect in the fin that defines.
The 11 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises the semiconductor element that is fixed on the fin, the lead frame that is connected with described fin, and the metal line that described lead frame and described semiconductor element is coupled together with electrically conducting manner; Described semiconductor element adopts plastic seal, and wherein, described fin is the fin that defines in aspect the of the present invention the 7th or the 8th.
The 12 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises the semiconductor element that is fixed on the fin, the lead frame that is connected with described fin, and the metal line that described lead frame and described semiconductor element is linked up with electrically conducting manner; Described semiconductor element adopts plastic seal, and described fin opens wide at the relative opposite side of a side that links to each other with described semiconductor element, and wherein, described fin is the fin that defines in aspect the 7th or the 8th of the present invention.
The 13 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises the semiconductor element that is fixed on the fin, be used for the lead-in wire that is connected with the wiring of outside, heart place exists an open spaces to lay the ceramic multilayer wiring substrate of described semiconductor element therein, and the metal line that described semiconductor element is connected with the terminal of substrate with electrically conducting manner, described fin and described substrate interconnect, so that make described semiconductor element be fixed on place, described space, described substrate then is connected on the seal closure, thereby, described semiconductor element and atmospheric environment are kept apart, wherein, described fin is the fin that defines in aspect the of the present invention the 7th or the 8th.
The 14 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises the semiconductor element that is fixed on the fin, be used for the terminal that is connected with the wiring of outside, heart place exists a groove to hold the ceramic multilayer wiring substrate of described semiconductor element therein, and the metal line that the terminal of described semiconductor element and substrate is connected with electrically conducting manner, the groove of described fin and described substrate interconnects, so that make described semiconductor element be fixed in described groove, described substrate is connected on the seal closure, thereby described semiconductor element and atmospheric environment are kept apart, wherein, described fin is the fin that defines in aspect the 7th or the 8th of the present invention.
The 15 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises fin, be connected to semiconductor element on the described fin by heat-conducting resin, the lead frame that is connected with the ceramic insulation substrate, and the TAB that described semiconductor element and lead frame is connected with electrically conducting manner, described fin and described substrate interconnect, so that making described semiconductor element and atmospheric environment keeps apart, and, described semiconductor element and described dielectric substrate are inserted into the elastic resin of heat conduction between the two and keep apart, wherein, described fin is the fin that defines in aspect the 7th or the 8th of the present invention.
The 16 aspect of the present invention is a kind of semiconductor device, described semiconductor device comprises first fin, the semiconductor element that is connected with described fin by metal, second fin that is connected with ground plate, described first fin is fixed on the ground plate of this fin, and the TAB that is connected to the terminal of described semiconductor element with electrically conducting manner, described semiconductor element adopts plastic seal, wherein, described fin is the fin that defines in aspect the 7th or the 8th of the present invention.
The 17 aspect of the present invention is a kind of dielectric piece that is used for the electrostatic attraction device, and described dielectric piece is formed by the Composite Preparation that any aspect in aspect above-mentioned first to the 6th defines.
The 18 aspect of the present invention is a kind of electrostatic attraction device, described electrostatic attraction device comprises an electrode layer and the dielectric piece with described electrode layer welding, when on described electrode layer, applying voltage, described dielectric piece can produce electrostatic attraction, so that object is fixed on the surface of described dielectric piece, wherein, described dielectric piece is the dielectric piece that defines in aspect the 17 of the present invention.
Composite material according to the present invention is made of metal and inorganic particulate.Described metal comprises Au, Ag, Cu and Al, and wherein, Cu is optimal, because it has high fusing point and high intensity.Described inorganic particulate is should be preferably stable behind those softer and sintering, and the mean thermal expansion coefficients in 20-150 ℃ scope is equal to or less than 5.0 * 10 -6/ ℃, preferably be equal to or less than 3.5 * 10 -6/ ℃, Vickers hardness is 300 or lower inorganic particulate.(they and traditional inorganic particulate are as SiC and Al 2O 3Difference, the difference in hardness of these two kinds of materials and parent metal is very big).This soft inorganic particulate can make to have good plastic working (hot working or cold working) behind the sintering.Rollability makes that producing thin sheet material in short process time becomes possibility.The composite material that is obtained is owing to the inorganic particulate dispersed and distributed wherein has high intensity.The possible example of described inorganic particulate comprises the oxide of copper, the oxide of tin, the plumbous oxide and the oxide of nickel.In described these examples, the oxide of preferably copper is because of its thermal coefficient of expansion minimum.
Composite material of the present invention should preferably adopt hard and tiny ceramic particle, as SiC and Al 2O 3Strengthen, the Vickers hardness of described ceramic particle is equal to or higher than 1000, and mean particle diameter is 3 μ m or littler, and its content is 5 volume % or lower.
Can pass through sintering according to fin of the present invention and dielectric piece, optional rolling and plastic working (for example compacting) obtains its final shape.
Cuprous oxide (the Cu that should preferably contain 20-80 volume % according to composite material of the present invention 2O) copper (Cu) alloy, wherein Cu phase and Cu 2O constitutes described dispersed structure mutually.Described composite material should preferably have 5 * 10 -6-14 * 10 -6/ ℃ thermal coefficient of expansion, and in the scope of room temperature to 300 ℃, the thermal conductivity of 30-325W/mk.
Described copper-cuprous oxide composite material should preferably contain the cuprous oxide (Cu of 20-80 volume % 2O), the rest is copper (Cu).Cu 2O is mutually corresponding with Cu to have orientation texture.Described composite material should preferably have 5 * 10 -6-14 * 10 -6/ ℃ thermal coefficient of expansion, and in the scope of room temperature to 300 ℃, be the thermal conductivity of 30-325W/mk.Thermal conductivity on the direction of orientation should greater than with the perpendicular direction of this direction of orientation on 2 times of thermal conductivity.
The following step production of composite material by adopting according to the present invention: copper powders may and cuprous oxide powder are mixed, mixed powder is suppressed, the formed body of suppressing at 800-1050 ℃ of following sintering, and carry out cold or thermoplasticity processing.(copper powders may is an example of described metal, and cuprous oxide powder is an example of described inorganic particulate.)
Carbon/carbon-copper composite material according to the present invention is prepared from by the mixed-powder of cupric oxide that contains unavoidable impurities (CuO) and copper (Cu).The amount of cupric oxide is 10.8-48.8 volume %.Its production process comprises the steps: described mixed-powder press forming, at the 800-1050 ℃ of described compression forming body of following sintering, makes described compression forming body curing thus and forms Cu by the reaction between CuO and Cu 2O carries out hot pressing or cold compaction (as plastic working) and annealing in process again.
Carbon/carbon-copper composite material of the present invention is by Cu and Cu 2O constitutes, and the former thermal coefficient of expansion is up to 17.6 * 10 -6/ ℃, thermal conductivity is up to 391W/mk, and the latter's thermal coefficient of expansion is lower, is 2.7 * 10 -6/ ℃, thermal conductivity then is 12W/mk.Just it can be configured as the fin that is used for semiconductor device by sintering.The sintered body that obtains be the Cu of 20-80Vol% by Cu and content 2O constitutes.The thermal coefficient of expansion of described sintered body is 5 * 10 -6-14 * 10 -6/ ℃, the thermal conductivity in the scope of room temperature to 300 ℃ is 30-325W/mk.Cu 2O content is equal to or higher than at 20% o'clock, and described composite material has the desired high thermal conductivity coefficient of fin.Cu 2O content was equal to or less than 80% o'clock, and described composite material has enough thermal conductivitys and structural strength.
Substantially go up by powder metallurgy according to composite material of the present invention and to obtain.Described carbon/carbon-copper composite material is by Cu powder and Cu 2O powder or CuO powder preparation form.Described these powder (as raw material) mix in predetermined ratio, the described mixed-powder of in mould, colding pressing, and the preform that is obtained carried out sintering.If necessary, obtaining sintered body is carried out the processing of heat or cold plasticity again.
The mixing of raw material powder is by using V-Mixer, and spherical grinding machine is perhaps realized by mechanical alloying.The particle size of raw material powder influences Cu behind pressing mold performance and the sintering 2The dispersiveness of O.Therefore, the particle diameter of Cu powder should be 100 μ m or littler, Cu 2The particle diameter of O and CuO powder should be 10 μ m or littler, is preferably 1-2 μ m.
At 400-1000kg/cm 2Pressure under, described mixed-powder is colded pressing in mould.Described pressure should be preferably along with Cu 2The increase of O content and increasing.
In argon atmospher, under the normal pressure or adopt HIP under pressure, to carry out hot pressing the preform of described mixed-powder is carried out sintering.Sintering should carry out under 800-1050 ℃ about 3 hours.Sintering temperature should be along with Cu 2The increase of O content and raising.Sintering temperature changes according to the kind of parent metal.When parent metal is copper, be 800 ℃ or lower as sintering temperature, then the sintered body that obtains will have low-density.In addition, at 1050 ℃ or higher sintering temperature Cu and Cu can take place 2Eutectic reaction between O, thus partial melting caused.Therefore, sintering range is 900-1000 ℃ fully.
Carbon/carbon-copper composite material according to the present invention is by Cu and Cu 2O constitutes, and the hardness of described composite material is low.Therefore, if necessary, can carry out cold working or hot working to it, above-mentioned processing is carried out in for example rolling and forging behind sintering.Add the anisotropy that trade union causes thermal conductivity, it is favourable that this need carry out heat conducting application scenario at specific direction for intensity or some.
According to the present invention, raw material powder can be CuO.With this CuO powder and Cu powder, and with the powder pressing forming that is mixed.The preform that sintering obtained is so that the Cu oxidation.As a result, just obtain a kind of by Cu matrix and Cu 2The sintered body that the O decentralized photo constitutes.At high temperature be transformed into Cu with the CuO of Cu coexistence according to following equation (1) 2O (it is thermally-stabilised phase).
2Cu+CuO→Cu+Cu 2O???????????????????(1)
Need the time of certain-length just can make the represented reaction of equation (1) reach balance.As sintering temperature is 900 ℃, then 3 hours just enough.
Cu in the sintered body 2The O particle should be tiny as far as possible, because its particle diameter is to the density of composite material, intensity and plastic working are influential.Mixed method is very big to the influence of particle diameter.Mixed tensor is high more, and the powder particle that cohesion takes place is few more.Thereby, can obtain tiny Cu behind the sintering 2O.
According to the present invention, Cu 2The particle of O phase can be done following definite according to employed hybrid machine.The diameter of 50 volume % or more particle is equal to or less than 50 μ m (if use is V-Mixer (mixed tensor is little)), or particle diameter is less than or equal to 50 μ m (if the spherical grinding machine of steel ball is housed in using), or particle diameter is less than or equal to 10 μ m when (mixed tensor maximum) (use mechanical alloying), and the particle diameter of remaining part is 50-200 μ m.When particle diameter is 200 μ m or when bigger, the porosity height of the composite material that is obtained, thereby its plastic working is poor.Work as Cu 2When the content of O phase surpassed 50 volume %, the thermal conductivity of the composite material that is obtained was low, and performance is inhomogeneous, thereby, be not enough to be used as the fin of semiconductor device.A kind of preferred construction is a kind of by Cu equally distributed Cu mutually and therein 2The structure that O phase (50 μ m or littler) constitutes.Cu 2The shape of O particle is extremely irregular, and fuses mutually before sintering; Their particle diameter can be observed under high power before the sintering.Cu 2The corresponding 10 μ m or littler that are preferably of O.
The accompanying drawing summary
Fig. 1 is that sintered body in embodiments of the invention 1 (specimen coding 4) is (by the Cu of Cu and 55 volume % 2The O formation) microstructural light micrograph.
Fig. 2 is that sintered body in embodiments of the invention 2 is (by the Cu of Cu and 55 volume % 2The O formation) microstructural light micrograph.
Fig. 3 is that sintered body in embodiments of the invention 3 is (by the Cu of Cu and 40 volume % 2The O formation) microstructural light micrograph.
Fig. 4 is that material after the forging in the embodiments of the invention 4 is (by the Cu of Cu and 55 volume % 2O constitutes) microstructural light micrograph, described microstructure is the microstructure on the parallel plane of the bearing of trend when forging.
Fig. 5 is the microstructural light micrograph of the sintered body (CuO by Cu and 32.2 volume % constitutes) in the embodiments of the invention 5 (specimen coding 14).
Relation between coefficient of thermal expansion shown in Fig. 6 and the thermal conductivity.
Fig. 7 is the plan view of the IGBT module in the embodiments of the invention 6.
Fig. 8 is the profile of the IGBT module in the embodiments of the invention 6.
Fig. 9 A-9D is the schematic diagram of the production stage of the IGBT module among the embodiment 6.
Shown in Figure 10 is matrix bending (being warpage) amount in each step of the IGBT module in producing embodiments of the invention 6.
Figure 11 is plane graph and the profile that is equipped with the energy conversion device of the IGBT module in the embodiments of the invention 6.
Shown in Figure 12 A and the 12B is the amount of bow of still being unkitted the energy conversion device of the IGBT module that has in the embodiments of the invention 6.
Shown in Figure 13 A and the 13B is the amount of bow that has been equipped with the energy conversion device of the IGBT module in the embodiments of the invention 6.
The profile of the plastic package of the fin in Figure 14 the has been built-in embodiments of the invention 7.
Figure 15 is the profile with plastic package of the fin in the embodiments of the invention 7 that expose.
Figure 16 is the profile of the packaging part in the embodiments of the invention 8.
Figure 17 is the profile with ceramic package of the radiating fin in the embodiments of the invention 8.
Figure 18 is the profile of the semiconductor device in the embodiments of the invention 9.
Figure 19 is the profile of the semiconductor device in the embodiments of the invention 9.
Figure 20 is the profile of the MCM in the embodiments of the invention 10.
Figure 21 is the profile of the electrostatic attraction device relevant with the present invention.
Implement optimal mode of the present invention
Embodiment 1
The raw material powder that uses in the present embodiment is cathode copper powder (particle diameter is 75 μ m or littler) and Cu 2O powder (particle diameter is 1-2 μ m, and purity is 3N).According to ratio shown in the table 1 above-mentioned two kinds of powder are mixed.The mixture (1400g) that is obtained is equipped with in one in the spherical grinding machine of dry type of steel ball and fully mixes, the time was above 10 hours.The mixed powder that is obtained is placed in the mould that diameter is 150mm, and at 400-1000kg/cm 2Pressure under cold pressing, described pressure is according to Cu 2O content and deciding.As a result, just having obtained diameter is 150mm, and height is the preform of 17-19mm.In argon atmospher, described pre-type body is carried out sintering.The sintered body that is obtained is carried out chemical analysis, structural testing, and carry out the mensuration of coefficient of thermal expansion, thermal conductivity and Vickers hardness.Subsidiary mentioning carried out sintering 3 hours under 900-1000 ℃, actual temp is according to Cu 2O content and deciding.Employing is carried out TMA and is analyzed coefficient of thermal expansion in Instrument measuring room temperature to the 300 ℃ scope of (thermo-mechanical analysis).Thermal conductivity adopts the laser method of burning to measure.Institute obtains and the results are shown in the table 1.The sintered body that obtains (specimen coding 4) has microstructure as shown in Figure 1.
Chemical analysis results shows that the composition of the sintered body that obtains is consistent with mixed proportion.Can obviously find out by table 1, according to Cu and Cu 2The ratio difference of O, the excursion of coefficient of thermal expansion and thermal conductivity is very big.Therefore, might produce sintered body with the desired hot property of fin.
Table 1
Numbering Form (volume %) Thermal coefficient of expansion (* 10 -6/℃) Thermal conductivity (W/mK)
Cu ?Cu 2O
?1 20 ?80 ?5.5 ?41
?2 ?30 ?70 ?7.0 ?63
?3 ?40 ?60 ?8.4 ?93
?4 ?45 ?55 ?9.3 ?116
?5 ?50 ?50 ?10.1 ?138
?6 ?60 ?40 ?10.8 ?183
?7 ?70 ?30 ?12.9 ?229
?8 ?80 ?20 ?13.8 ?280
Microphoto shown in Figure 1 (* 300) shows Cu in its microstructure 2The O particle size is 50 μ m or littler, Cu 2O evenly disperses in mutually at Cu.(Cu 2The O particle has slightly in the mix stages gathering and in the sintering stage grows up).In the microphoto, white portion is represented the Cu phase, and black is partly represented Cu 2The O phase.
It may be noted that Cu by Fig. 1 2The O particle is with irregularly shaped dispersion, occupy cross-sectional area its 99% or more.
Described Cu phase and Cu 2Hardness (the H of O phase v) be respectively 210-230 and 75-80.The sintered body that is obtained has good machinability (turning and drilling), can easily be processed into desired shape.
Embodiment 2
The step that is adopted is identical with embodiment 1, and what use when just mixing is V-Mixer.The sintered body that is obtained is by the Cu of Cu and 55 volume % 2O constitutes.Adopt the method identical, microstructure, coefficient of thermal expansion and the thermal conductivity of described sintered body are measured with embodiment 1.
Fig. 2 is the Cu by Cu and 55 volume % 2The light micrograph (* 300) of the sintered body that O constitutes.Can obviously find out by photo, have the very big Cu of size difference in the microstructure 2The O particle.Big Cu 2Take place to assemble when the O particle mixes in V-Mixer and form.The Cu that the coefficient of thermal expansion of the sintered body in the present embodiment is identical with composition with thermal conductivity 2O Cu mutually in homodisperse sintered body almost suitable.Yet measured result is different different because of the position.It may be noted that most of Cu 2The O particle is as in Fig. 1, and with irregularly shaped dispersion, but their aggregation extent is than big among Fig. 1.
Embodiment 3
The raw material powder that uses in the present embodiment is cathode copper powder (its particle diameter is 74 μ m or littler) and CuO powder (its particle diameter is 3N as 1-2 μ m, purity).Above-mentioned two kinds of powder are mixed, to obtain the mixture that constitutes by the CuO of Cu and 22.4 volume %.In the interior planetary ball mill (diameter 120mm) that steel ball (diameter 8mm) be housed, adopt mechanical alloying method fully to mix the mixture (300g) that is obtained and reach 25 hours.It is the mould of 80mm that the mixed powder that is obtained is placed a diameter, and at 1000kg/cm 2Pressure under cold pressing.The result just obtains a kind of pre-type body.Under 800 ℃, the described pre-type body of sintering in argon atmospher, the time is 2 hours.Adopt the method identical that the sintered body that is obtained is carried out structure, coefficient of thermal expansion and thermal conductivity detection with embodiment 1.Also adopt X-ray diffractometer to test to it.
Fig. 3 is the microstructural light micrograph (* 1000) of described sintered body.By can obviously finding out Cu among the figure 2The O particle is more tiny than the corresponding particle in embodiment 1 and 2, and, be of a size of 10 μ m or littler Cu 2The O particle is homodisperse.This tiny microstructure can satisfy improves intensity and cold rolling performance demands.It may be noted that 95% or more Cu 2The O particle is with the irregularly shaped dispersion as among Fig. 1, but some particles wherein are spherical (per 100 μ m 2Area in population be about 20).
Adopt X-ray diffractometer to test to described sintered body, with the oxide type of determining wherein to be contained.The just Cu that is occurred 2The diffraction maximum of O.This result shows that in sintering process, CuO is transformed into Cu fully 2O.Chemico-analytic result shows that just as desired, described sintered body is by the Cu of Cu and 40 volume % 2O constitutes.
Find, described sintered body have with below with identical coefficient of thermal expansion and the thermal conductivity of sintered body among the embodiment 5 of the same composition addressed.
Embodiment 4
Raw material powder used in the present embodiment is identical with embodiment 1.Raw material powder is mixed, a kind of to obtain by Cu and 55 volume %Cu 2The mixture that O constitutes.In V-Mixer, the mixture (550g) that is obtained is fully mixed.It is the mould of 80mm that the mixed powder that is obtained is placed a diameter, and at 600kg/cm 2Pressure under cold pressing.The result just obtains a pre-type body that is of a size of 80mm * 22mm.In argon atmospher, in 975 ℃ of described pre-type bodies of following sintering, the time is 3 hours.The sintered body that is obtained is heated to 800 ℃ and with one 200 tons squeezer it is forged (forging ratio is 1.8).Forge the back and under 500 ℃, carry out tempering and annealing.Adopt the method identical that structure, coefficient of thermal expansion and the thermal conductivity of the product that obtained are measured with embodiment 1.
Find that described forging product is except that slight limit portion cracking occurring, and is still gratifying.Carbon/carbon-copper composite material of the present invention has preferable plastic working.
Fig. 4 is the microstructural light micrograph (* 300) of described forging product.It may be noted that Cu phase and Cu 2Distortion has all taken place O mutually and the direction distribution of orientations is forged on the edge; Yet defective does not occur as cracking.Also notice 95% or more Gu 2The O particle disperses with the irregular particulate forms that connects.Elongation has taken place in described particle in plastic working.
Adopt the laser method of burning to measure the thermal conductivity (table 2) of described sintered body and forging product.Described sintered body does not have anisotropy on thermal conductivity.Yet the thermal conductivity of described forging product but shows anisotropy.Cu phase and Cu 2Also want big for 2 times of thermal conductivity on thermal conductivity ratio on the L direction of the O phase distribution of orientations C direction (forging direction) vertical with the L direction.Coefficient of thermal expansion in the scope of room temperature to 300 ℃ does not almost have anisotropy; This result with embodiment 1 is consistent.Table 2
Thermal conductivity (W/mk)
The L direction The C direction
Sintered body ????111 ????106
Forging product ????152 ????67
Embodiment 5
Used raw material powder is cathode copper powder (its particle diameter is 74 μ m or littler) and CuO powder (its particle diameter is 1-2 μ m, and purity is 3N) in the present embodiment.According to ratio shown in the table 3 above-mentioned two kinds of powder are mixed.In the spherical grinding machine of the interior dry type that steel ball is housed, the mixture (1400g) that is obtained fully to be mixed, the time was above 10 hours.It is the mould of 150mm that the mixed powder that is obtained is placed a diameter, and at 400-1000kg/cm 2Pressure under cold pressing, the occurrence of described pressure is decided according to CuO content.As a result, just obtain pre-type body, subsequently, described pre-type body has been carried out sintering in argon atmospher.The sintered body that is obtained is carried out chemical analysis, structure detection and coefficient of thermal expansion and The determination of thermal conductivity.Also adopt X-ray diffractometer to test described sintered body, so that determine the wherein oxide type of existence.By the way, sintering carried out under 900-1000 ℃ 3 hours, and concrete sintering temperature decide according to CuO content, the coefficient of thermal expansion in room temperature to the 300 ℃ scope that adopted the Instrument measuring that carries out TMA analysis (thermo-mechanical analysis).Thermal conductivity adopts the laser method of burning to measure, and it is as shown in table 3 that institute obtains the result.Table 3
Numbering Powder constituent (volume %) Sintered body is formed (volume %) Thermal coefficient of expansion (* 10 -6/℃) Thermal conductivity (W/mK)
Cu ?CuO ?Cu ?Cu 2O
?11 51.2 ?48.8 ?20 ?80 ?5.6 ?55
?12 58.1 ?41.9 ?30 ?70 ?7.0 ?80
?13 64.9 ?35.1 ?40 ?60 ?8.5 ?105
?14 67.8 ?32.2 ?45 ?55 ?9.1 ?129
?15 71.4 ?28.6 ?50 ?50 ?9.7 ?149
?16 77.6 ?22.4 ?60 ?40 ?10.6 ?185
?17 83.5 ?16.5 ?70 ?30 ?12.7 ?228
?18 89.2 ?10.8 ?80 ?20 ?13.5 ?282
Adopt X-ray diffractometer to detect described sintered body, so that determine the wherein oxide type of existence.The diffraction maximum correspondence have only Cu 2O.This shows that during the sintering, CuO is transformed into Cu fully 2O.
The microstructure of sample 14 as shown in Figure 5.This light micrograph (* 300) shows that its structure is consistent with the sample with same composition among the embodiment 1.Cu 2O is by Cu 2O (oxidation reaction by Cu and CuO forms) and Cu 2O (by being decomposed to form of CuO) constitutes.Cu 2The O particle is consistent with the corresponding particle among the embodiment 1.
Can obviously find out by table 3, described sintered body with by Cu 2The sintered body that the O powder makes is difference and not very big on coefficient of thermal expansion.Yet, work as Cu 2When O content surpassed 50 volume %, the thermal conductivity of described sintered body was higher.This is that the density of the sintered body that obtains is higher because when adopting the CuO powder preparation.
Shown in Fig. 6 is the curve of the relation of thermal conductivity shown in the expression table 3 (X) and thermal coefficient of expansion (Y).The point of being marked and drawed is between two straight lines representing with equation Y=0.031X+4.65 and Y=0.031X+5.95 respectively.The average added value of the thermal coefficient of expansion in 20-250 ℃ of scope is for from W/mk0.025-0.035ppm/ ℃ of 20 ℃ value per unit.
Embodiment 6
What present embodiment illustrated is the application of carbon/carbon-copper composite material of the present invention.This application is the fin of the IGBT (igbt) as one of power semiconductor.
Fig. 7 is a plan view of showing the inside modules of being made up of 24 IGBT elements.Fig. 8 is the cutaway view of the module of an IGBT.Adopt solder 201 that 4 IGBT elements 101 and two diode elements 102 are connected on the AlN substrate 103.AlN substrate 103 is made up of two Copper Foil thin slices 202 and 203 and AlN plates 204, and above-mentioned two Copper Foils adopt the welding of silver solder (not shown) with the AlN plate.On AlN substrate 103, be formed with emitter wiring region 104, collector electrode wiring region 105 and grid wiring district 106.IGBT element 101 and diode element 102 are welded on the collector electrode wiring region 105.Each element is connected to emitter wiring region 104 by metal wire 107.In addition, be provided with resistive element 108 in grid wiring district 106, the grid welding spot of IGBT element 101 links to each other with resistive element 108 by plain conductor 107.Each 6 AlN substrate 103 all laying semiconductor element all connects by solder 205 and fin 109.Fin 109 with plating Ni surface adopts the Cu-Cu described in the embodiment 1-5 2The O Composite Preparation forms.AlN substrate 103 links to each other with terminal 206 by solder 209.Terminal 206 and plastic housing 207 constitute base stage chunk 208 together.Plastic housing 207 adopts organic silicon rubber binding agent 210 bonding with fin 109.Terminal and each AlN substrate of drawing from shell chunk 208 are connected at directed 111, two collector terminals 112 of terminal of 110, two emitters of two emitter terminals and gate terminal 113 places.Then, spray silicon gel 212 by jacket 211 (it has the resin jet), so that described terminal is covered fully.Afterwards, topple over thermosetting epoxy resin 213, so that with whole surperficial capping.Thereby, just finished the manufacturing of described module.Fin 109 by 8 bolt that run through 8 bolts hole 114 to aluminium support body.Bolt hole 114 adopts machine work to make.In addition, described shell 207 connects by other 8 bolts (adopting binding agent 210 to connect) that run through 8 bolts hole 115.
Table 4 shows normally used basis material and (contains 30 volume %Cu according to Cu composite material of the present invention 2O) the coefficient of thermal expansion and the comparative result of thermal conductivity.It may be noted that and adopt Cu-Cu 2The semiconductor element of O basis material has than the lower thermal coefficient of expansion of module that adopts normally used Cu basis material.Solder 209 connects AlN substrate and matrix 109 reliability is improved.Be used for improving solder 106 and have the Cu-Cu of ratio at the Mo or the Al-SiC matrix of the reliability of adverse circumstances 2The thermal coefficient of expansion that the O matrix is lower.Yet its thermal conductivity is also less, and the result causes the thermal resistance of module bigger.Has a Cu-Cu according to of the present invention 2The thermal fatigue life of the module of O matrix is than 5 times also long of the module with Cu matrix, and its thermal resistance is equivalent to have 0.8 times of module of the Mo matrix of same thickness.Table 4
Material Thermal coefficient of expansion (ppm/ ℃) Thermal conductivity (W/mK) Remarks
Cu-Cu 2O (30 volume %) 13.5 ?230 The present invention
Cu 17 ?390 Prior art
Mo ?5 ?140
Al-SiC ?8 ?160
The above results has been widened the range of choice of modular structure and material, for example, in the embodiment shown in fig. 7, Cu-Cu 2The thermal conductivity ratio Mo matrix height of O matrix.In other words, the thermal diffusion performance of this matrix improves.Therefore, at the semiconductor element run duration, the temperature difference of its end and center is reduced.Semiconductor element can be made 1.2 times of conventional module.As a result, the traditional structure with 30 unit of IGBT is replaced by a kind of IGBT new construction with 24 unit now.Like this, just can reduce the size of module.In addition, might use the alumina substrate (as dielectric substrate) of thermal conductivity ratio AlN matrix low (low about 20%) now.The bending strength of aluminium oxide is better than AlN, and therefore, it can be processed into bigger substrate.The thermal coefficient of expansion of alumina plate is than AlN plate hight, and the coefficient of thermal expansion difference between itself and basis material is less.This can make the degree of crook of module itself reduce.Alumina substrate can be made to such an extent that size is bigger, and bigger substrate can be installed more semiconductor element.In other words, the aluminium substrate can make the insulation area in each substrate reduce, and the insulation area between two substrates is reduced.This can cause reducing of module size.
Fig. 9 A-9D is the schematic diagram of showing according to the production stage of module of the present invention.
(Fig. 9 A) prepares the Cu-Cu with nickel plating surface 2O matrix 109.Be close to straight under the state of this matrix when buying.
(Fig. 9 B) is welded to AlN substrate 103 on the matrix 109 with solder 205.The AlN substrate is equipped with and adopts solder 102 to weld knot semiconductor element 101 together with it.Matrix 109 can be crooked when solder cools off, because its coefficient of thermal expansion with the assembly that is made of AlN substrate and semiconductor element is different.As a result, the back side of template can become recessed.
(Fig. 9 C) shell chunk 108 adopts thermosetting adhesive to assemble.When binding agent turned cold, it is almost straight that the back side of module can become, because the thermal coefficient of expansion of shell is than assembly 301 height that welded.
(Fig. 9 D) inside modules is filled with silica gel 212 and thermosetting epoxy resin 213.It is protruding that the back side of module becomes, because the thermal coefficient of expansion height of described resin.
What the curve among Figure 10 reflected is the amount of back side bending in each step.On the occasion of the recessed bending of representative, negative value is represented convex curved.Have according to Cu-Cu of the present invention 2The module degree of crook of O matrix is than the module with traditional Mo matrix little (being about 1/3rd).Module with Cu matrix has the crooked recessed back side (concave amount is 100 μ m or bigger) after machining, because widely different (result does not illustrate in the drawings) of its coefficient of thermal expansion and AlN substrate, so the back side of this module crooked depression can occur in step (b).Have according to Cu-Cu of the present invention 2The amount of bow of the module of O matrix is little; Therefore, module can be done than bigger in the past.In assembling process degree of crook less, in the running because the degree of crook that causes of variations in temperature is also less.Therefore, the lubricating grease between module and cooling fins can not flow.
Shown in Figure 11 is the embodiment of module application of the present invention energy conversion device wherein, and present embodiment is a kind of 2 level inverter.Power semiconductor 501 is installed on the aluminum thermal fin 511 and 512 fixes by tighting a bolt, and wherein, heat radiation lubricating fat 510 is placed between described device and fin.Usually, two pack modules, 501 symmetric arrays are so that connected the two by a single middle wiring 503 (some B).Collector electrode wiring 502 and emitter wiring 504 are applied in by U, and V is attached thereto the supply voltage 509 that connects mutually with W.Holding wire is formed in each IGBT module 501, grid wiring 505, emitter auxiliary wiring 506 and collector electrode auxiliary wiring 507.Load is represented with 508.
Shown in the curve among Figure 12 A and the 12B is the amount of bow of module.Shown in the curve among Figure 13 A and the 13B is amount of bow (lubricating grease thickness) on the module back side that records before and after tightening of the module after the assembling.Figure 12 A and 13A represent the result among the present invention, and that Figure 12 B and 13B reflection is the result of prior art.For the module with known traditional Al-SiC matrix, the amount of the bending at its back side (projection) is about 100 μ m.Yet, if module applies with lubricating grease, to tighten again afterwards, bending direction can be put upside down (being become recessed by projection), because when tightening, the surface can be subjected to the thrust of lubricating grease.As a result, in the center, the thickness of lubricating grease increases, and the also corresponding increase of contact resistance.On the contrary, for Cu-Cu according to the present invention 2O matrix, the amount of initial bending are about 50 μ m, and after adding lubricating grease and tightening, the thickness of module centers place lubricating grease still remains about 50 μ m.This is because the rigidity of described matrix is very good.As a result, Wan Qu amount reduces half than traditional Al-SiC matrix.In addition, the thickness of lubricating grease also becomes even in the module.Because lubricating grease has thrust, has rigidity during assembling not as good as Cu-Cu 2The module of the Cu matrix of O alloy substrate can deform.This problem is by adopting Cu-Cu of the present invention 2The O alloy is resolved.
As shown in the figure, Cu-Cu of the present invention 2The O alloy substrate has than traditional Mo that is applied to the high reliability module or lower thermal resistance and the contact heat resistance of al-SiC basis material.Therefore, this alloy allows as shown in Figure 11, and module is carried out intensive assembling.In addition, because cooling fins has made radiating effect be improved, therefore might reduce assembling desired area of described energy conversion device and volume.The reduction of lubricating grease thickness can make cooling fins keep straight, and this might construct the energy conversion device with large scale cooling fins.In addition, might exempt auxiliary cooling provision such as forced air-cooling.This can cause the decline with noise of reducing of size again.
Embodiment 7
In the present embodiment, the carbon/carbon-copper composite material of being introduced among the embodiment 1-5 of the present invention is applied to comprise the plastic package of IC shown in Figure 14 and 15.Shown in Figure 14 is the packaging part with internal set heat radiation fin.Shown in Figure 15 is the packaging part with the fin that exposes.
Described fin is by Cu-Cu 2The O Composite Preparation forms, wherein, and Cu 2The excursion of O content is 20-55Vol%.The thermal coefficient of expansion of the composite material that is obtained in the scope of room temperature to 300 ℃ is 9 * 10 -6-14 * 10 -6/ ℃.The thermal coefficient of expansion of this thermal coefficient of expansion and mold pressing resin is approaching.Described fin finally carries out machine work and Nickel Plating Treatment.
With reference to Figure 14 the structure of packaging part is made an explanation.Shown nickel plating fin 33 is made by carbon/carbon-copper composite material of the present invention.Shown lead frame 31 connects with described fin 33 by the polyimides band 32 of insulation.Shown IC34 is soldered on the fin 33.Shown Au line 35 is connected to the Al electrode on the IC on the lead frame.These assemblies except the part lead frame, all adopt mold pressing resin 36 sealings that mainly are made of epoxy resin, silica filler and curing agent.The packaging part with the fin that exposes as shown in figure 15 is different with packaging part as shown in figure 14, and difference is that fin 33 is exposed to the outside of mold pressing resin.
Carried out crooked and the check of cracking situation to the binding site of packaging part between fin and mold pressing resin of introducing above.Find, if the difference of thermal expansion coefficient between fin and mold pressing resin is 0.5 * 10 -6/ ℃ or littler, the problem that then do not have occurs.Also find, if Cu 2O content is 20-35 volume %, and then described composite material has high thermal conductivity (200W/mk).
Embodiment 8
What present embodiment illustrated is the gelled IC ceramic package of a kind of assembling, and described fin is made by the carbon/carbon-copper composite material of being introduced in embodiment 1-5 of the present invention.Figure 16 and 17 is profiles of described ceramic package.Among Figure 16, shown is the IC41 that a kind of fin 42 that adopts polyimide resin and nickel plating connects.Fin 42 is soldered to Al 2O 3Packaging part 43 on.Described packaging part has the copper wiring, and is equipped with plug 44, so that link to each other with circuit board.Also show a kind of aluminum steel 45 that the wiring of aluminium electrode on the IC and described packaging part is connected.Described these assemblies carry out as lower seal.The weld-ring of being made by kovar alloy links to each other with packaging part by silver solder.Then, by using welding roll that weld-ring is welded on the cover of being made by kovar alloy 47.Shown in Figure 17 is the ceramic package (identical with the packaging part shown in Figure 16) that radiating fin 48 is housed.
Embodiment 9
What present embodiment illustrated is the gelled packaging part of a kind of assembling, and described fin is made by the carbon/carbon-copper composite material of introducing in embodiment 1-5 of the present invention.Described packaging part adopts TAB (tape automated bonding) technology to be prepared from.Figure 18 and 19 is profiles of described packaging part.
Among Figure 18, can see the IC51 that the fin 53 that adopts heat-conducting resin 52 and nickel plating combines.The terminal place of described IC has Au projection 54 to form.Au projection 54 links to each other with TAB55.TAB55 connects with lead frame 57 by film wiring 56.Described IC adopts ceramic substrate 59, wire frame 60 and seal glass 61 encapsulation, and organic silicon rubber 58 places the centre.
Figure 19 shows resin-sealed packaging part.IC65 combines by Au-Si alloy 66 and nickel plating fin 67 of the present invention.Described IC also further combines with copper ground plate 69 and nickel plating fin 70 of the present invention by heat-conducting resin 68.In addition, the terminal of described IC is connected on the TAB72 by Au system cushion pad 71, and adopts resin 73 to seal.Be exposed to lead frame 57 and fin section the outside of sealing resin.Adopt the silver paste 74 of epoxy resin-matrix that described TAB is fixed on the described copper ground plate.
Embodiment 10
That present embodiment illustrates is the MCM with fin of being made by the carbon/carbon-copper composite material of the present invention as shown in Fig. 1-5.Figure 20 is the profile of described MCM.Fin 83 is processed by sintered body (be rolled or without rolling) by compacting.
IC81 links to each other with film wiring 84 on being formed at nickel plating fin 83 of the present invention by Au line 82.Described IC also links to each other with wiring on the packaging part 85 that is formed at the AlN system by the Au line.Described IC is connected on the outside terminal 86.Described IC adopts cover 87 sealings that are welded, and Au-Sn preform 88 is between the metallized layer of the W of described packaging part.
Embodiment 11
What present embodiment illustrated is the electrostatic attraction device that is equipped with the dielectric piece of composite material system of the present invention.Figure 21 is its profile.
As shown in figure 21, the electrostatic attraction device is used as the chuck in the sputtering equipment, and described sputtering equipment under the reduced atmosphere, is handled the workpiece 90 of conductor or semiconductor system in vacuum chamber 95.When on the electrode 94 that voltage (about 500V) is added to the electrostatic attraction device by DC power supply 91, in dielectric piece 92 and 90 of workpiece electrostatic attraction will appear.As a result, workpiece 90 just is attracted to the surface of dielectric piece.In the present embodiment, described dielectric piece is made by the composite material described in the embodiment 1-5.
During actual sputter, workpiece 90 is fixed on the electrostatic attraction device.Adopt the vacuum pump that is connected with exhaust outlet 97, vacuum chamber 95 is vacuumized, reduce to about 1 * 10 until internal pressure -3Till the Pa.Open the valve that is connected with gas access 96, make reacting gas (argon gas etc.) enter into vacuum chamber 95 with the flow velocity of about 10sccm.Pressure in the vacuum chamber 95 is about 2 * 10 -2Pa.
Afterwards, apply high frequency power (13.56MHz is about 4KW down), so that between the electrode 94 of electrostatic attraction device and another electrode (not shown), produce plasma to the electrode 94 of described electrostatic attraction device.The voltage of described high frequency power is 2KV (V DC) and 4KV (V PP).The matching box 98 that is positioned at 93 of the electrode 94 of described electrostatic attraction device and high frequency power sources is designed to carry out impedance matching with vacuum chamber, so that high frequency power is effectively generated on the plasma.
In the actual motion of this sputtering equipment, the temperature of workpiece 90 can reach about 450 ℃.Yet the dielectric piece 92 of described electrostatic attraction device does not still change, and no cracking phenomena (generation exogenous impurity) occurs.This means that the functional reliability of described electrostatic attraction device is effectively improved.
By the way, when described electrostatic attraction device is applied to anyly when being designed in the reduced atmosphere device that conductor or semiconductor workpiece (as silicon substrate) are handled, it all will obtain above-mentioned identical effect.Described electrostatic attraction device can be used as chemical vapor deposition unit, physical vapor deposition device, lapping device, Etaching device, the chuck of ion implantation apparatus etc.
Electrostatic attraction device in the present embodiment can make the thermal resistance of dielectric piece be improved, and its dielectric breakdown strength does not suffer damage.If electrostatic attraction device according to the present invention is used as the chuck of the device of working under reduced pressure, then might reduce by the rupture appearance of caused exogenous impurity of dielectric piece.
Industrial applicibility
Composite of the present invention has low coefficient of thermal expansion, high thermal conductivity and good plastic working. Therefore, described composite can be produced in a large number by less procedure of processing.
Composite of the present invention also has the Cu of comprising phase (thermal conductivity is high) and Cu2The mixed structure of O phase (coefficient of thermal expansion is low); Therefore, described composite has the performance of above-mentioned two kinds of materials concurrently. If with Cu content and Cu2O content is fully adjusted, and composite of the present invention will have low coefficient of thermal expansion and high thermal conductivity. Composite of the present invention will be used as the dielectric piece of fin and the electrostatic attraction device of semiconductor devices.

Claims (10)

1. semiconductor device, it comprises dielectric substrate with fin and the semiconductor element that is installed on the described dielectric substrate, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
2. semiconductor device, it comprises the semiconductor element that is installed on the fin, the lead frame that is connected with described fin, and the metal line that described lead frame is electrically connected with described semiconductor element, described semiconductor element adopts plastic seal, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
3. semiconductor device, it comprises the semiconductor element that is installed on the fin, the lead frame that is connected with described fin, and the metal line that described lead frame is electrically connected with described semiconductor element, described fin opens wide at the opposite side relative with a side that is connected with described semiconductor element, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
4. semiconductor device, it comprises the semiconductor element that is installed on the fin, the lead-in wire of substrate is used to connect up, exist an open spaces to lay described semiconductor element at described substrate center place, and the metal line that described semiconductor element is connected with the terminal of substrate with electrically conducting manner, described fin and described substrate interconnect, so that make described semiconductor element be fixed on place, described space, and described substrate then is connected on the seal cover, thereby described semiconductor element and atmospheric environment are kept apart, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
5. semiconductor device, it comprises the semiconductor element that is installed on the fin, be used for the terminal that is connected with the wiring of outside, the center exists a groove to lay the ceramic multilayer wiring substrate of described semiconductor element, and the metal line that the terminal of described semiconductor element and substrate is connected with electrically conducting manner, the groove of described fin and described substrate interconnects, so that make described semiconductor element be fixed in described groove, and described substrate is connected on the seal cover, thereby described semiconductor element and atmospheric environment are kept apart, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
6. semiconductor device, it comprises fin, be connected to semiconductor element on the described fin by heat-conducting resin, the lead frame that is connected with the ceramic insulation substrate, and the TAB that described semiconductor element and lead frame is connected with electrically conducting manner, described fin and described substrate interconnect, so that described semiconductor element and atmospheric environment are kept apart, and the elastic resin that described semiconductor element and described dielectric substrate are inserted into heat conduction between the two separates, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
7. semiconductor device, it comprises first fin, the semiconductor element that is connected with described fin by metal, second fin that is connected with ground plate, described first fin is connected with ground plate, described first fin is fixed on the ground plate of this fin, and the TAB that connects the terminal of described semiconductor element with electrically conducting manner, described semiconductor element adopts plastic seal, wherein, described fin uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
8. semiconductor device, it comprises dielectric substrate with fin and the semiconductor element that is installed on the described dielectric substrate, wherein, described fin uses the composite material that is made of metal and the thermal coefficient of expansion inorganic particulate littler than described metal to make, it is characterized in that the aggregate form dispersed and distributed of described inorganic particulate to connect, described aggregation stretches along the plastic working direction.
9. semiconductor device, it comprises dielectric substrate with fin and the semiconductor element that is installed on the described dielectric substrate, wherein, described fin uses the composite material that is made of copper and Cu oxide particle to make, it is characterized in that mode that the oxide particle of described copper disperses should make 95% or more this particle (size with the particle area on the cross section is represented) form the aggregation that connects with complex configuration.
10. electrostatic attraction device, it comprises electrode layer and the dielectric piece that combines with described electrode layer, when on described electrode layer, applying voltage, described dielectric piece can produce electrostatic attraction, so that object is fixed on the surface of described dielectric piece, wherein, described dielectric piece uses the composite material that is made of copper and Cu oxide to make, and the oxide that it is characterized in that described copper is cuprous oxide (Cu 2O), the content of described cuprous oxide is 20-80 volume %.
CNB021199221A 2002-05-16 2002-05-16 Composite material and application thereof Expired - Fee Related CN1197151C (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930953A (en) * 2009-06-25 2010-12-29 国际商业机器公司 Semiconductor apparatus assembly and heat sink assembly
CN116618647A (en) * 2023-07-21 2023-08-22 安徽诺星航空科技有限公司 Molybdenum-copper alloy composite material and preparation process thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930953A (en) * 2009-06-25 2010-12-29 国际商业机器公司 Semiconductor apparatus assembly and heat sink assembly
CN101930953B (en) * 2009-06-25 2012-03-21 国际商业机器公司 Semiconductor device assembly and radiator assembly
CN116618647A (en) * 2023-07-21 2023-08-22 安徽诺星航空科技有限公司 Molybdenum-copper alloy composite material and preparation process thereof
CN116618647B (en) * 2023-07-21 2023-10-13 安徽诺星航空科技有限公司 Molybdenum-copper alloy composite material and preparation process thereof

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