CN1369920A - LED and its preparing process - Google Patents
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- CN1369920A CN1369920A CN01103909A CN01103909A CN1369920A CN 1369920 A CN1369920 A CN 1369920A CN 01103909 A CN01103909 A CN 01103909A CN 01103909 A CN01103909 A CN 01103909A CN 1369920 A CN1369920 A CN 1369920A
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- emitting diode
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Abstract
The invention relates to a kind of light-emitting diode (LED) and its preparing method. Wafer for producing LED is provided in the invention. Multi layers of gallium-aluminium arsenide forms structure of luminous efficient LED on extinction base plate of wafer. Transparent base plate is glued to surface of wafer of LED by use of soft transparent adhesive layer. Thus it increase luminous efficiency of LED greatly.
Description
The invention relates to a kind of light-emitting diode (Light Emitting Diode; LED) chip structure and manufacture method thereof, particularly a kind of structure and manufacture method thereof of the relevant luminous second tube sheet of AlGaInP (AIGaln P).
AlGaInP light-emitting diode commonly used has a double-heterostructure (DoubleHeterostructure; DH), as shown in Figure 6, be on n p type gallium arensidep (GaAs) substrate 3, to grow up an aluminium content at the n of 70-100% type (Al
xGa
1-X)
0.5Ln
0.5Coating layer 4, (Al under the P
xGa
1-X)
0.5Ln
0.5P active layer 5, an aluminium resultant are at the p of 70-100% type (Al
xGa
1-X)
0.5Ln
0.5The electric current dispersion layer of last coating layer 6 of P and the high energy gap of a p type (Current Spreading Layer) 7, the material of this one deck can be that gallium phosphide, phosphorus arsenicization are transferred, InGaP or aluminum gallium arsenide etc., utilize the composition that changes active layer, just can change the lumination of light emitting diode wavelength, make the wavelength of its generation from the 650nm redness to the pure green of 555nm.But this light-emitting diode commonly used has a shortcoming, be exactly the light that active layer produces, when down being incident to the GaAs substrate, because the energy gap of GaAs substrate is less, therefore the light that is incident to the GaAs substrate will be absorbed, and can't produce high efficiency light-emitting diode.
For fear of the extinction of substrate, have some documents to expose the technology of LED, yet these technology all have its shortcoming and restriction.For example people such as Sugawara is published in [Appl.PhysLett.Vol.61,1775-1777 (1992)] and has just disclosed a kind of utilization and add one deck and disperse Bragg reflecting layer (Distributed Bragg Refl ector; DBR) on the GaAs substrate, use the light that is reflected into directive GaAs substrate, and reduce arsenicization and transfer substrate and absorb, yet, because the DBR reflector is only for effectively reflecting near the luminous energy that is normally incident in the GaAs substrate, so practical function and little.
People such as Kish be published in [Appl.Phys Lett.VOl.64, NO.21,2839, the document of (1994), name is called " Very high-efficiency semiconductorwafer-bonded transparent-substrate (Al
xGa
1-X)
0.5Ln
0.5P/GaP "] disclose the transparent mode substrate (Transparent-Substrate of a kind of adhesive wafer (wafer bonding); TS) (Al
xGa
1-X)
0.5Ln
0.5The P/GaP light-emitting diode.This TSAIGalnP LED utilizes gas phase brilliant method (VPE) of heap of stone and P type gallium phosphide (GaP) window layers of formation thickness quite thick (about 50 μ m), and then optionally removes N p type gallium arensidep (GaAs) substrate with the common chemical etching method.N type (the Al that subsequently this is exposed
xGa
1-X)
0.5Ln
0.5Coating layer is bonded on the n type gallium phosphide substrate that thickness is about 8-10mil under the P.Because this wafer bonding (Wafer Bonding) directly bonds together two kinds of III-V compound semiconductors, therefore will be at higher temperature, heating and pressurizing a period of time just can finish.With regard to luminosity, the TS AIGalnP LED that this mode obtained is than absorption substrate (Absorbing-Substrate commonly used; AS) more than the big twice of AIGalnP LED.Yet the shortcoming of this TS AIGalnP LED is exactly that manufacture process is too numerous and diverse, and can have the high-ohmic of a non-ohmic contact at joint interface usually, therefore, can't obtain high production acceptance rate, and be difficult to reduce manufacturing cost.
Another kind of common technology, for example people such as Horng is published in [Appl.Phys.Lett.Vol.75, No.20,3054 (1999)] document, name is called " AIGalnP light-emitting dlodes with mirror substratesfabricated by wafer bonding "].A kind of chip integration technology of utilizing of people's teachings such as Horng is to form minute surface substrate (Mirror-Substrate; MS) AlGaInP/metal/silica/silicon LED.It uses AuBe/Au as sticky material, uses to engage silicon substrate and LED epitaxial layer.Yet under the 20mA operating current, the luminous intensity of this MSAIGalnP LED only is about 90med, still lacks 40 of percentage at least than the luminous intensity of TS AIGalnP LED, so its luminous intensity can't be satisfactory.
The object of the present invention is to provide a kind of light emitting diode construction, it comprises that one has the multilayer epitaxial structure of a luminescent layer, combine with a transparency carrier by an adhesive linkage, overcome the drawback of prior art, reach the purpose of the luminous efficiency that improves light-emitting diode.The luminescent layer of this diode comprises homostyructure (Homostructure), single heterojunction structure (Singleheterostructure, SH), double-heterostructure (Double heterostructure, DH) or multiple quantum trap structure (Multi quantum wells, MQWs): also comprise the first metal ohmic contact electrode layer and the second metal ohmic contact electrode layer simultaneously, contact with the first conductivity type epitaxial layer and the second conductivity type epitaxial layer respectively, and the first metal ohmic contact electrode layer and the second metal ohmic contact electrode layer all are to be positioned at the same side.
Second purpose of the present invention is to provide a kind of manufacturing method for LED, by a clear adhesive, as BCB (B-staged bisbenzocyclobutene BCB) resin the light-emitting diode epitaxial layer is combined with transparency carrier, and light emitting diode base plate removed to the first conductivity type etch stop layer, to form the first metal ohmic contact electrode layer, simultaneously partially-etched to the second conductivity type epitaxial layer, form one second metal ohmic contact electrode layer, and the first metal ohmic contact electrode layer and the second metal ohmic contact electrode layer all are to be positioned at the same side.The material of adhesive linkage used in the present invention is not limited to the BCB resin, and other can form the adhering substance of pellucidity, and (EpOXy) all is applicable to the present invention as epoxy resin.
The object of the present invention is achieved like this: a kind of light-emitting diode, comprise light-emitting diode chip, and it is characterized in that: this wafer of heap of stone is provided with the light emitting diode construction of multilayer AlGaInP epitaxial layer formation and grows up on the extinction substrate; Transparency carrier and this light-emitting diode epitaxial layer surface are bonded together by soft clear adhesive.
This substrate is a GaAs.This light-emitting diode is an AlGaInP.This light-emitting diode is an AlGaInP single heterojunction structure.This light-emitting diode is that aluminum phosphate is sowed the indium double-heterostructure.This light-emitting diode is the AlGaInP quantum well structures.The material of the clear adhesive of this matter comprises the BCB resin.The material of the clear adhesive that this is soft comprises epoxy resin.This transparency carrier with this extinction substrate is removed after light-emitting diode engages.This transparency carrier is a sapphire.This transparency carrier is a glass.This transparency carrier is gallium phosphide or gallium arsenide phosphide.This transparency carrier is gallium selenide, zinc sulphide or tin zinc sulphur.This transparency carrier is a carborundum.This clear adhesive comprises this transparency carrier and light-emitting diode epitaxial layer surface engagement mode together at least: the phase I is included in to pressurize in the 60-100 ℃ of scope and heat and forms; Second stage is included in to pressurize in the 200-600 ℃ of scope and heat and forms.
A kind of manufacturing method for LED comprises light-emitting diode chip is provided, and it is characterized in that: this wafer of heap of stone is provided with the light emitting diode construction of multilayer aluminum gallium arsenide epitaxial layer formation and grows up on the extinction substrate; By soft clear adhesive together with transparency carrier and light-emitting diode epitaxial layer surface engagement.
This substrate is a GaAs.This light-emitting diode is an aluminum gallium arsenide.This light-emitting diode is an aluminum gallium arsenide single heterojunction structure.This light-emitting diode is the aluminum gallium arsenide double-heterostructure.This light-emitting diode is the aluminum gallium arsenide quantum well structures.The material of this clear adhesive comprises the BCB resin.The material of this clear adhesive comprises epoxy resin.Transparency carrier with the substrate of extinction is removed after light-emitting diode engages.This transparency carrier is a sapphire.This transparency carrier is a glass.This transparency carrier is gallium phosphide or gallium arsenide phosphide.This transparency carrier is gallium selenide, zinc sulphide or zinc selenide sulphur.This transparency carrier is a carborundum.Described this clear adhesive of utilizing comprises following manner at least with this transparency carrier and light-emitting diode epitaxial layer surface engagement step together: the phase I is included in to pressurize in the 60-100 ℃ of scope and heat and forms; Second stage is included in to pressurize in the 200-600 ℃ of scope and heat and forms.
Major advantage of the present invention is:
1, a kind of adhesive structure of simple LED wafer is provided, can under lower temperature, carries out chip attach, reduce the problem that V group element volatilizees in the bonding process.And, therefore can significantly promote the luminous efficiency of LED owing to do not have base by the shortcoming of extinction.
2, processing procedure is simple, and can adopt transparency carrier cheaply such as glass, therefore can obtain high acceptance rate and effect cheaply.
3, light-emitting diode of the present invention is to adopt a soft clear adhesive to engage a light-emitting diode and a transparency carrier, therefore, even if the light-emitting diode chip surface irregularity also can utilize adhesive linkage that it closely is bonded together.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Fig. 1 is manufacturing process one schematic diagram of light-emitting diode of the present invention;
Fig. 2 is manufacturing process two schematic diagrames of light-emitting diode of the present invention;
Fig. 3 is manufacturing process three schematic diagrames of light-emitting diode of the present invention;
Fig. 4 is a light emitting diode construction schematic diagram of the present invention;
Fig. 5 is another light emitting diode construction schematic diagram of the present invention;
Fig. 6 is the light emitting diode construction schematic diagram of using always;
Consult Fig. 1-Fig. 3, the present invention discloses a kind of light emitting diode construction and manufacture method thereof.The epitaxial structure of light-emitting diode of the present invention comprises N p type gallium arensidep substrate 26, etch stop layer 24, the N type AlGaInP (Al that stacks in regular turn
xGa
1-X)
0.5Ln
0.5Coating layer 22 and AlGaInP (Al under the P
xGa
1-X)
0.5Ln
0.5P active layer (Active Layer) 20, P type AlGaInP (Al
xGa
1-X)
0.5Ln
0.5 Last coating layer 18 of P and P type ohmic contact epitaxial layer (Ohmic Contact Epitaxial Layer) 16.
The material of P type ohmic contact epitaxial layer can be aluminum gallium arsenide or AlGaInP or gallium arsenide phosphide, as long as its energy gap, can not absorb the light that active layer produces greater than active layer, but must have high carrier concentration, be beneficial to form ohmic contact, just can be chosen as P type ohmic contact epitaxial layer.
Above-mentioned active layer, the scope of its aluminium content is at x=0-0.45, and its aluminium content of upper and lower coating layer is controlled at X=0.5-1.0 approximately, and when the aluminium resultant X=0 of active layer, the composition of active layer is Ga
0.5Ln
0.5P, and the wavelength of light-emitting diode to go into d be at 635nm approximately.
Above-mentioned compound proportioning, for example active layer (Al
xGa
1-X)
0.5Ln
0.5P enumerates a preferred example, is not that the present invention is equally applicable to other ratio in order to restriction the present invention.In addition in the present invention, the structure of AIGalnP active layer 20 can be to adopt homostyructure, single heterojunction structure, double-heterostructure or multiple quantum trap commonly used.So-called double-heterostructure (DH) comprises N type AlGaInP (Al shown in Figure 1
xGa
1-X)
0.5Ln
0.5 A coating layer 22 and an AlGaInP (Al under the P
xGa
1-X)
0.5Ln
0.5P active layer 20, a P type AlGaInP (Al
xGa
1-X)
0.5Ln
0.5The last coating layer 18 of P, wherein this preferred thickness of three layers branch is 0.5-3.0 μ m, 0.5-2.0 μ m, 0.5-3.0 μ m in addition.
In the present invention, the material of etch stop layer 24 can be the compound semiconductor of any III-V family element, as long as its lattice constant can be complementary with GaAs substrate 26, in order to avoid difference row, and etch-rate just can be used as etch stop layer far below the substrate of being made up of the GaAs material 26.The preferable material of etch stop layer 24 can be InGaP (InGaP) or aluminum gallium arsenide (AIGaAs) in the present invention.In the present embodiment under the N type AlGaInP etch-rate of coating layer also far below the GaAs substrate.Therefore, as long as its thickness is thicker, also can not need the different epitaxial layer of another layer composition to be used as etch stop layer.
Structure as shown in Figure 2 comprises clear adhesive 14, and its material is BCB (B-stagedbisbenzocy clobu tene:BCB) resin and a transparency carrier TS 10.The material of adhesive linkage 14 used in the present invention is not limited to the BCB resin, and other has the adhering substance that similarity can form pellucidity, as epoxy resin, all is applicable to the present invention.Transparency carrier can adopt glass, sapphire (Sapp hire) wafer, carborundum (SiC) chip, gallium phosphide (GaP) chip, gallium arsenide phosphide (GaAsP) wafer, zinc selenide (ZnSe) wafer, zinc sulphide (ZnS) wafer and selenium zinc sulphide (ZnSSe) wafer etc., as long as it does not have very big absorption for the light that luminescent layer sends these chips, can be used as transparency carrier of the present invention, if and another advantage of the present invention is a not necessarily single-chip of employed transparency carrier, because during lumination of light emitting diode, electric current is not by transparency carrier, and the purpose of transparency carrier just is used as a mechanical support and prevents that the light-emitting diode epitaxial layer from breaking in being made the crystal grain process.Therefore, also can use compound crystal (POlycrysta) substrate or amorphous (Amorphous) substrate, and significantly reduce production costs.
Cooperate and consult the light-emitting diode chip of Fig. 1 and the transparency carrier of Fig. 2, stick together by the BCB adhesive linkage, the process of adhesion is to finish the high-temperature pressurizing heating a period of time about 250 ℃.In order to improve the engagement characteristics between light-emitting diode chip and the transparency carrier, also can follow promoter at the surface coated last layer of light-emitting diode epi-wafer and transparency carrier, and then be coated with upward BCB, then the heating a period of time of the high-temperature pressurizing about 250 ℃ is finished the bonding of wafer of heap of stone and transparency carrier.In order to make bonding better effects if, also can be with BCB bonding light-emitting diode chip and transparency carrier, earlier low-temperature heat a period of time of 60-100 ℃, organic solvent in the BCB is caught up with, and then elevated temperature is to 200-600 ℃ scope, and BCB and light-emitting diode chip and transparency carrier bond together closely.The wafer of heap of stone that adhesion is good is followed with corrosive liquid as (5H
3PO
4: 3H
2O
2: 3H
2O or INH
4OH: 35H
2O
2) corrosion, lighttight N p type gallium arensidep substrate is removed.If etch stop layer adopts InGaP or AIGaAs still can absorb the light that active layer produces, therefore, also must remove or only stay the part that contacts with N type metal ohmic contact electrode layer fully with corrosive liquid.And then with dry-etching method such as RIE with coating layer under the part N type AlGaInP, coating layer is removed on AlGaInP active layer and the P type AlGaInP, and expose P type ohmic contact epitaxial layer to the open air, then form P type metal ohmic contact electrode layer 28 on P type ohmic contact epitaxial layer 16, and formation N type metal ohmic contact electrode layer 30, on coating layer 22 under the N type AlGaInP, just a P, N metal ohmic contact electrode layer have been formed, all at the light emitting diode construction of the same side, as shown in Figure 3.
The optical wavelength of being sent according to the AlGaInP light-emitting diode of gained of the present invention is about 635nm, and under the operating current of 20mA, its optical output power is about 4mW, is more than 2 times of optical output power of absorption substrate AlGaInP light-emitting diode commonly used.
The present invention is not limited to only be applicable to high brightness AlGaInP light-emitting diode, and the present invention also goes for other light LED material, as aluminum gallium arsenide redness and infrared light-emitting diode.Fig. 4 is another epitaxial structure schematic diagram of the present invention.The epitaxial structure of 650nm aluminum gallium arsenide red light emitting diodes of the present invention comprises under the N p type gallium arensidep substrate 51 that stacks in regular turn, the N type aluminum gallium arsenide coating layer 54 (the about 70-80% of aluminium content, the about 0.5-3.0 μ of thickness m) on coating layer 52 (aluminium content is 70-80% and thickness 0.5-3 μ m), aluminum gallium arsenide active layer 53 (aluminium content about 35% and the about 0.5-2.0 μ of thickness m) and the P type aluminum gallium arsenide.Then an above-mentioned aluminum gallium arsenide red light emitting diodes sheet of heap of stone and a transparency carrier 56 (as sapphire wafer) are bonded together with BCB silicones 55.The wafer of heap of stone that adhesion is good is followed with corrosive liquid (as NH
4OH: H
2O
2=1.7: 1) corrosion, lighttight N p type gallium arensidep substrate is removed.Then, then coating layer and aluminum gallium arsenide active layer under the part N type aluminum gallium arsenide are removed, and expose coating layer on the P type aluminum gallium arsenide with wet etching or dry-etching method.Then, form P type metal ohmic contact electrode layer 57 on coating layer 54 on the P type aluminum gallium arsenide, and form N type metal ohmic contact electrode layer 58 on coating layer 52 under the N type aluminum gallium arsenide, just a P, N metal ohmic contact electrode body layer have been formed all at the light-emitting diode of the same side, as shown in Figure 5.
The optical wavelength of being sent according to the red aluminum gallium arsenide light-emitting diode of gained of the present invention is about 650nm, and under the operating current of 20mA, and its optical output power is 2 times of optical output power of absorption substrate aluminum gallium arsenide light-emitting diode commonly used.
Light-emitting diode of the present invention is owing to adopt transparency carrier, and P, N metal ohmic contact electrode be positioned at the opposite side of transparency carrier, therefore can encapsulate to cover brilliant mode, and not need to adopt metal routing commonly used, and the reliability of assembly is preferable.And because transparency carrier extinction not, the brightness of light-emitting diode can significantly increase.In addition, transparency carrier is as adopting materials such as sapphire, glass or carborundum, because these materials are stone, so substrate thickness can be reduced to about 100 microns, and can in die process or encapsulation procedure, not break, can produce the less light-emitting diode of thinner thickness and volume.
Light-emitting diode of the present invention is to adopt a soft clear adhesive to engage a light-emitting diode and a transparency carrier, therefore, even if the light-emitting diode chip surface irregularity also can utilize adhesive linkage that it closely is bonded together.
The above is preferred embodiment of the present invention only, is not in order to qualification protection scope of the present invention, and all other do not break away from the equivalence of being finished under the disclosed spirit and change or modification, all should be included within protection scope of the present invention.
Claims (30)
1. a light-emitting diode comprises light-emitting diode chip, it is characterized in that: this wafer of heap of stone is provided with the light emitting diode construction of multilayer AlGaInP epitaxial layer formation and grows up on the extinction substrate; Transparency carrier and this light-emitting diode epitaxial layer surface are bonded together by soft clear adhesive.
2. as claim 1 a described light-emitting diode, it is characterized in that: this substrate is a GaAs.
3. as claim 1 a described light-emitting diode, it is characterized in that: this light-emitting diode is an AlGaInP.
4. as claim 1 a described light-emitting diode, it is characterized in that: this light-emitting diode is an AlGaInP single heterojunction structure.
5. as claim 1 a described light-emitting diode, it is characterized in that: this light-emitting diode is that aluminum phosphate is sowed the indium double-heterostructure.
6. as claim 1 a described light-emitting diode, it is characterized in that: this light-emitting diode is the AlGaInP quantum well structures.
7. as claim 1 a described light-emitting diode, it is characterized in that: the material of the clear adhesive of this matter comprises the BCB resin.
8. as claim 1 a described light-emitting diode, it is characterized in that: the material of the clear adhesive that this is soft comprises epoxy resin.
9. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier with this extinction substrate is removed after light-emitting diode engages.
10. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier is a sapphire.
11. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier is a glass.
12. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier is gallium phosphide or gallium arsenide phosphide.
13. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier is gallium selenide, zinc sulphide or tin zinc sulphur.
14. as claim 1 a described light-emitting diode, it is characterized in that: this transparency carrier is a carborundum.
15. as claim 1 a described light-emitting diode, it is characterized in that: this clear adhesive comprises this transparency carrier and light-emitting diode epitaxial layer surface engagement mode together at least: the phase I is included in to pressurize in the 60-100 ℃ of scope and heat and forms; Second stage is included in to pressurize in the 200-600 ℃ of scope and heat and forms.
16. the manufacturing method for LED of a claim 1 comprises light-emitting diode chip is provided, and it is characterized in that: this wafer of heap of stone is provided with the light emitting diode construction of multilayer aluminum gallium arsenide epitaxial layer formation and grows up on the extinction substrate; By soft clear adhesive together with transparency carrier and light-emitting diode epitaxial layer surface engagement.
17. as claim 16 a described manufacturing method for LED, it is characterized in that: this substrate is a GaAs.
18. as claim 16 a described manufacturing method for LED, it is characterized in that: this light-emitting diode is an aluminum gallium arsenide.
19. as claim 16 a described manufacturing method for LED, it is characterized in that: this light-emitting diode is an aluminum gallium arsenide single heterojunction structure.
20. as claim 16 a described manufacturing method for LED, it is characterized in that: this light-emitting diode is the aluminum gallium arsenide double-heterostructure.
21. as claim 16 a described manufacturing method for LED, it is characterized in that: this light-emitting diode is the aluminum gallium arsenide quantum well structures.
22. as claim 16 a described manufacturing method for LED, it is characterized in that: the material of this clear adhesive comprises the BCB resin.
23. as claim 16 a described manufacturing method for LED, it is characterized in that: the material of this clear adhesive comprises epoxy resin.
24., it is characterized in that as claim 16 a described manufacturing method for LED: transparency carrier with the substrate of extinction is removed after light-emitting diode engages.
25. as claim 16 a described manufacturing method for LED, it is characterized in that: this transparency carrier is a sapphire.
26. as claim 16 a described manufacturing method for LED, it is characterized in that: this transparency carrier is a glass.
27. as claim 16 a described manufacturing method for LED, it is characterized in that: this transparency carrier is gallium phosphide or gallium arsenide phosphide.
28. as claim 16 a described manufacturing method for LED, it is characterized in that: this transparency carrier is gallium selenide, zinc sulphide or zinc selenide sulphur.
29. as claim 16 a described manufacturing method for LED, it is characterized in that: this transparency carrier is a carborundum.
30. as claim 16 a described manufacturing method for LED, it is characterized in that: described this clear adhesive of utilizing comprises following manner at least with this transparency carrier and light-emitting diode epitaxial layer surface engagement step together: the phase I is included in to pressurize in the 60-100 ℃ of scope and heat and forms; Second stage is included in to pressurize in the 200-600 ℃ of scope and heat and forms.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011039094A CN1206748C (en) | 2001-02-12 | 2001-02-12 | LED and its preparing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011039094A CN1206748C (en) | 2001-02-12 | 2001-02-12 | LED and its preparing process |
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| Publication Number | Publication Date |
|---|---|
| CN1369920A true CN1369920A (en) | 2002-09-18 |
| CN1206748C CN1206748C (en) | 2005-06-15 |
Family
ID=4653544
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306623C (en) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | Method for manufacturing nitride luminous apparatus |
| CN100409461C (en) * | 2004-10-20 | 2008-08-06 | 晶元光电股份有限公司 | Structure of LED and its mfg method |
| CN101271949B (en) * | 2004-11-11 | 2010-09-29 | 晶元光电股份有限公司 | Production method of LED |
| CN107955358A (en) * | 2017-12-15 | 2018-04-24 | 马鞍山松鹤信息科技有限公司 | A kind of special light LED material of optical electron and preparation method thereof |
-
2001
- 2001-02-12 CN CNB011039094A patent/CN1206748C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306623C (en) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | Method for manufacturing nitride luminous apparatus |
| CN100409461C (en) * | 2004-10-20 | 2008-08-06 | 晶元光电股份有限公司 | Structure of LED and its mfg method |
| CN101271949B (en) * | 2004-11-11 | 2010-09-29 | 晶元光电股份有限公司 | Production method of LED |
| CN107955358A (en) * | 2017-12-15 | 2018-04-24 | 马鞍山松鹤信息科技有限公司 | A kind of special light LED material of optical electron and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1206748C (en) | 2005-06-15 |
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Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: GUOLIAN PHOTOELECTRIC SCIENCE AND TECHNOLOGY CO LTD Effective date: 20061027 |
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Effective date of registration: 20061027 Address after: Hsinchu Science Industrial Park, Taiwan Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Industrial Park, Taiwan Patentee before: Guolian Photoelectric Science and Technology Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20050615 |
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| CX01 | Expiry of patent term |