CN1360752A - Single sideband mixer - Google Patents
Single sideband mixer Download PDFInfo
- Publication number
- CN1360752A CN1360752A CN 00810317 CN00810317A CN1360752A CN 1360752 A CN1360752 A CN 1360752A CN 00810317 CN00810317 CN 00810317 CN 00810317 A CN00810317 A CN 00810317A CN 1360752 A CN1360752 A CN 1360752A
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- China
- Prior art keywords
- signal
- mixer
- single sideband
- frequency
- sideband mixer
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- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000010363 phase shift Effects 0.000 claims description 7
- 240000000233 Melia azedarach Species 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/52—Modulators in which carrier or one sideband is wholly or partially suppressed
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- Amplifiers (AREA)
- Superheterodyne Receivers (AREA)
Abstract
The invention relates to a single sideband mixer for radio frequency signals which can be integrated on a uniform semiconductor substrate in a space-saving manner. The inventive single sideband mixer comprises two double-sideband mixers (3) which are switched with identical first signals and with phase quadrature second signals in order to form a product signal from the two signals. The single sideband mixer also comprises an adder (7) for superimposing the two product signals to form an output signal with a sideband. An amplifier (1) is connected in incoming circuit to each mixer (3) in order to generate the first signal, and the amplifiers (1) have inputs which are connected to the same signal source via a forked line (11). The signal source of the amplifiers (1) can be a pre-amplifier or can be an input of the single sideband mixer directly.
Description
The present invention relates to a single sideband mixer that is suitable for high-frequency signal.So frequency mixer is used in high frequency technique, from high-frequency signal (radio frequency, produce in RF) (down-conversion mixer or demodulator) low frequency signal (intermediate frequency, ZF) or from a low frequency signal, produce a high-frequency signal (upper frequency mixer or modulator).(local oscillator, LO) mixing draws the ZF signal to pass through RF signal and LO signal in down-conversion mixer.In upper frequency mixer, draw the RF signal by ZF signal and LO signal mixing.The simple multiplication of input signal (RF or ZF) and LO signal provide respectively have two sidebands, in the output signal of intermediate frequency range or radio-frequency region bias internal.Single sideband mixer only produces a sideband in these two sidebands in output signal.This single sideband mixer by two independent, simply be called suitably being connected to form of two sideband frequency mixers of frequency mixer below.Its function can be understood as multiplying each other of its two input signals.
Cicada is used for the single sideband mixer of high-frequency signal, and it comprises two frequency mixers, these two frequency mixers and is connected with secondary signal with 90 ° of phase shifts each other with identical first signal respectively.So that from two signals, form a product signal respectively, and comprise an addition and save in two product signals are superposed to one and have the only output signal of a sideband.Typical so demodulator is described in Fig. 3.Here the RF signal from input 4 through one or more amplifiers 1 and 0 ° of power divider, for example a so-called Wilkinson distributor is guided two frequency mixers 3 into.90 ° of couplers 6 that are connected with local oscillator input 5 provide respectively the respective input of the local oscillator signal of 90 ° of phase shifts each other to frequency mixer 3.On the output of frequency mixer, draw intermediate-freuqncy signal 90 ° of phase shifts each other, that have each two sideband thus.This signal is called in-phase signal (ZF/I) or quadrature phase signal (ZF/Q).These two intermediate-freuqncy signals merge or stack through the 2 90 ° of coupler 7, and draw the output intermediate-freuqncy signal.According to the local oscillator signal phase shift distribute to two frequency mixers, two sidebands of in-phase branch and quadrature branch superpose respectively at the homophase in the back of the 2 90 ° of coupler 7 and another anti-phase signal.So on two outlet terminals of the 2 90 ° of coupler 7, obtain two output signals that only comprise a sideband in two sidebands respectively.Output 8 that forms single sideband mixer in these terminals; Isolate another output with wave impedance, so that replace undesirable sideband (image frequency) to suppress interference signal and noise.
The power divider 2 of this traditional single sideband mixer is necessary, so that the in-phase branch of this single sideband mixer and quadrature branch decoupling that is to say to prevent that two frequency mixers 3 from influencing each other by its RF input.So power divider 2 comprises the coupling circuit of λ/4 length, and wherein λ is the wavelength of radio frequency in the line.This length is equivalent to 1mm at least in the important frequency of technology.Therefore comparing this power divider with the other element of circuit is very long part, and this part is integrated owing to the expense reason is suitable on a public semiconductor chip the other element with amplifier, frequency mixer or this single sideband mixer only relatively poorly.Therefore use this power divider with the form of a discrete parts, its output is connected with the circuit of guiding frequency mixer 3 into through the pressure welding lead.In order on the output of single sideband mixer, to suppress undesirable sideband better, must mutually adjust signal time delay in two branch roads with the micron precision, arrive the 2 90 ° of coupler 7 so that guarantee the product signal of two frequency mixers with suitable phase place.This is to be difficult to guarantee with lead pressure welding technology.
Advantage of the present invention
Set up a single sideband mixer that is suitable for the high-frequency signal of the form that begins to define by the present invention, it is suitable for complete integrated on semiconductor chip better.Realize this advantage thus, promptly each frequency mixer is connected in series an amplifier respectively, and this amplifier has through the circuit that the intersects input with identical signal source connection.Cancellation isolated power distributor in this circuit layout, because intercepted the interference signal that frequency mixer is exported by amplifier on its incoming line, amplifier has just guaranteed enough decouplings of two branch roads of single sideband mixer like this.
Signal source, amplifier obtains its input signal from this signal source, can be the public preamplifier that connects on an input.First signal mainly is the RF signal in this case, and secondary signal is the LO signal, and the one 90 ° of coupler that is used to produce secondary signal is connected the LO input of this sideband frequency mixer.
Signal source also can be the signal input part of single sideband mixer.For example first signal can be the LO signal in this case, and secondary signal is the ZF signal, and the one 90 ° of coupler that is used to produce secondary signal is connected the ZF input of sideband frequency mixer.
From description, draw other feature and advantage of the present invention below with reference to figure.
Diagram
Fig. 1 is as the down-conversion mixer of the first embodiment of the present invention;
Fig. 2 is as the upper frequency mixer of second embodiment; With
A traditional single sideband mixer has been described above Fig. 3.
The down-conversion mixer of describing in Fig. 1 can be completely integrated on the semiconductor chip of GaAs.It comprises a preamplifier 9 that connects on radio frequency (RF) signal input part 4, its output is connected on two amplifiers 1 through simple cross link 11, and these two amplifiers belong to the in-phase branch and the quadrature branch of single sideband mixer respectively.This amplifier 1 is based on field-effect transistor fast, its on semiconductor chip, the locational requirement of about 100 * 200 μ m is significantly less than power divider.Because amplifier and preamplifier are integrated on the public substrate, so cancelled the pressure welding connection, so can be have without difficulty predesignated between amplifier 9 and the preamplifier 1 and at amplifier 1 be connected line length between the frequency mixer 3 on its output with several microns precision aborning.Though the in-phase branch of this single sideband mixer and quadrature branch respectively than contain parts in traditional single sideband mixer more, be very simple in single sideband mixer therefore according to Fig. 1, when producing, between the signal on two branch roads, keep desirable phase place ratio.
The frequency mixer 3 that connects on the output of amplifier 1 has an input that is used for local oscillator signal in addition, frequency mixer is from the local oscillator signal of 90 ° of this difference phase shifts of 90 ° of phase place couplers, 6 acquisitions, and local oscillator signal is supplied with the phase place coupler from the outside through input 5 on the other hand.Second input with wave impedance isolating coupler 6.
Two frequency mixers 3 provide a homophase intermediate-freuqncy signal or the quadrature intermediate-freuqncy signal input to the 2 90 ° of coupler 7 respectively, form the medium frequency output end of single sideband mixer from output of this coupler, and isolate second output with wave impedance.
90 ° of couplers 6 and 7 can be integrated on the GaAs substrate as hybrid element respectively jointly.
Fig. 2 has pointed out that principle of the present invention is used on upper frequency mixer.This single sideband mixer also is integrated on the same semiconductor chip.The input of two amplifiers 1 is connected with an input 5 of local oscillator signal through simple cross link 11.
Respectively phase shift 90 ° ground supply with two frequency mixers 4 from input 4 through 90 ° of couplers 6 with the intermediate-freuqncy signal that local oscillator must mix.These two frequency mixers 3 produce thus has the radiofrequency signal of two sidebands.This radiofrequency signal with two sidebands is supplied to 90 ° of frequency mixers 7 once again, and its stack has each one, two radiofrequency signals of the sideband exported on output 8A, 8B.
The application of two amplifiers 1 allows to abandon power divider and therefore allows whole single sideband mixers to be integrated on the same semiconductor chip in this upper frequency mixer.
Improve the linearity in RF path on mixer output by booster amplifier 10 90 ° of coupler 7 fronts.
Claims (8)
1. the single sideband mixer that is used for high-frequency signal, have two two sideband frequency mixers (3), it is connected with secondary signal with 90 ° of phase shifts each other with identical first signal respectively, so that from two signals, form a product signal respectively, and having an addition joint (7) is used for two product signals are superposed to the output signal with a sideband, it is characterized in that, each frequency mixer (3) is connected in series each amplifier (1) respectively and is used to produce first signal, and amplifier (1) has circuit (11) and same signal source (5 through an intersection, 9) input of Lian Jieing.
2. according to the single sideband mixer of claim 1, it is characterized in that signal source is a preamplifier (9).
3. according to the single sideband mixer of claim 2, it is characterized in that, first signal is a radiofrequency signal, and secondary signal is a local oscillator signal, and is used to produce secondary signal at last the one 90 ° of coupler (6) that connect of the local oscillator input (5) of single sideband mixer.
4. according to the single sideband mixer of claim 1, it is characterized in that signal source is the signal input part (5) of single sideband mixer.
5. according to the single sideband mixer of claim 4, it is characterized in that, first signal is a local oscillator signal, and secondary signal is an intermediate-freuqncy signal, and is used to produce secondary signal at last the one 90 ° of coupler (6) that connect of the middle frequency input terminal (4) of single sideband mixer.
6. the single sideband mixer that one of requires according to aforesaid right is characterized in that, arranges a post amplifier (10) that is used for product signal respectively between the output of two sideband frequency mixers (3) and addition joint (7).
7. the single sideband mixer that one of requires according to aforesaid right, it is characterized in that two sideband frequency mixers (3), amplifier (1), addition joint (7) are integrated on the identical semiconductor chip with perhaps preamplifier (9), the one 90 ° of coupler (6) or post amplifier (10).
8. according to the single sideband mixer of one of aforesaid right requirement, it is characterized in that the addition joint is the 2 90 a ° of coupler (7).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1999121921 DE19921921A1 (en) | 1999-05-12 | 1999-05-12 | Single-sided band mixer for HF signals has amplifier connected before each mixer to produce first signal; amplifiers have inputs connected via branched line to common signal source |
| DE19921921.4 | 1999-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1360752A true CN1360752A (en) | 2002-07-24 |
Family
ID=7907848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00810317 Pending CN1360752A (en) | 1999-05-12 | 2000-05-12 | Single sideband mixer |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1183775A1 (en) |
| CN (1) | CN1360752A (en) |
| AU (1) | AU5098200A (en) |
| DE (1) | DE19921921A1 (en) |
| NO (1) | NO20015453L (en) |
| WO (1) | WO2000070745A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145763B (en) * | 2006-09-14 | 2010-06-09 | 英飞凌科技股份公司 | Rf amplifier |
| CN102025371A (en) * | 2009-09-11 | 2011-04-20 | 索尼公司 | Synchronous oscillator, clock recovery apparatus, clock distribution circuit, and multi-mode injection circuit |
| CN111279210A (en) * | 2017-08-24 | 2020-06-12 | 瑞典爱立信有限公司 | Integrated wireless communication and radar system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2078038B (en) * | 1980-06-02 | 1984-07-25 | Gen Electric Co Ltd | Superheterodyne receivers |
| GB2106734B (en) * | 1981-09-15 | 1986-01-15 | Standard Telephones Cables Ltd | Radio receiver |
| US4457022A (en) * | 1982-04-28 | 1984-06-26 | Motorola Inc. | Two diode image rejection and pseudo-image enhancement mixer |
| FR2741764B1 (en) * | 1995-11-23 | 1998-01-02 | Thomson Csf | METHOD AND DEVICE FOR REMOVAL OF SIGNAL RESIDUES IN QUADRATURE SIGNAL MODULATORS-DEMODULATORS |
-
1999
- 1999-05-12 DE DE1999121921 patent/DE19921921A1/en not_active Withdrawn
-
2000
- 2000-05-12 EP EP00935443A patent/EP1183775A1/en not_active Withdrawn
- 2000-05-12 WO PCT/IB2000/000839 patent/WO2000070745A1/en not_active Application Discontinuation
- 2000-05-12 AU AU50982/00A patent/AU5098200A/en not_active Abandoned
- 2000-05-12 CN CN 00810317 patent/CN1360752A/en active Pending
-
2001
- 2001-11-07 NO NO20015453A patent/NO20015453L/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145763B (en) * | 2006-09-14 | 2010-06-09 | 英飞凌科技股份公司 | Rf amplifier |
| CN102025371A (en) * | 2009-09-11 | 2011-04-20 | 索尼公司 | Synchronous oscillator, clock recovery apparatus, clock distribution circuit, and multi-mode injection circuit |
| CN102025371B (en) * | 2009-09-11 | 2014-02-12 | 索尼公司 | Synchronous oscillator, clock recovery apparatus, clock distribution circuit, and multi-mode injection circuit |
| CN111279210A (en) * | 2017-08-24 | 2020-06-12 | 瑞典爱立信有限公司 | Integrated wireless communication and radar system |
| CN111279210B (en) * | 2017-08-24 | 2023-09-29 | 瑞典爱立信有限公司 | Integrated wireless communication and radar system |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1183775A1 (en) | 2002-03-06 |
| WO2000070745A1 (en) | 2000-11-23 |
| DE19921921A1 (en) | 2000-11-16 |
| NO20015453D0 (en) | 2001-11-07 |
| AU5098200A (en) | 2000-12-05 |
| NO20015453L (en) | 2001-11-07 |
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| C06 | Publication | ||
| C10 | Entry into substantive examination | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |