CN1358986A - Characterization system for property measurement of intermediate infrared waveband semiconductor laser - Google Patents
Characterization system for property measurement of intermediate infrared waveband semiconductor laser Download PDFInfo
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- CN1358986A CN1358986A CN 01132286 CN01132286A CN1358986A CN 1358986 A CN1358986 A CN 1358986A CN 01132286 CN01132286 CN 01132286 CN 01132286 A CN01132286 A CN 01132286A CN 1358986 A CN1358986 A CN 1358986A
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Abstract
The present invention relates to a middle-infrared wave band semiconductor laser performance measurement characterization system, belonging to the field of semiconductor measuring and testing techniques, and is characterized by that its hardware portion is formed from 5 portions of Fourier transformer spectrograph and laser spectrum measuring system in which double-modulation technique is introduced, driving system based on wide-range pulse signal generator, measuring moniloring system based on digital oscilloscope current probe and middle-infrared detector, computer control system based on universal parallel interface card and heat sink refrigerator and temp. control system. The programming software of software portion is TESPOINT of CEC company, and adopts programming mode geared to object. It not only has the functions of measuring I-P and I-V characteristics of device and laser spectroscopic characteristics, but also can change driving pulse parameters in wide range to improve output characteristics of device and can make measurement and analysis of heat cahracteristics, and can make continuous measurement of the device.
Description
Technical field
The present invention relates to a kind of middle-infrared band semiconductor laser performance measure characterizes technology, or rather, the invention provides a kind of solution of middle-infrared band semiconductor laser measuring system and relevant measuring technique set up, belong to the semiconductor test technical field.
Background technology
Infrared multiple quantum well laser (Multi-quantum-welllaserdiodes in the antimonide of 2 mu m wavebands, MQW-LD) (Quantumcascadelasers's INFRARED QUANTUM CASCADE LASERS and in the InP base of 4 mu m wavebands QCL) came out respectively at 1991 and 1994.Afterwards, the QCL excitation wavelength extends to 8.4 μ m (1996), and DFB structure QCL (1998) has appearred thereafter again in 11 μ m (1996), 3.4 μ m strain compensation QCL (1998), 8 μ m high power continuous working QCL, antimonide QCL etc.The wavelength of InP base QCL has extended to 19 μ m at present.QCL wavelength spread to the 88 μ m of AlGaAs/GaAs, antimonide QCL wavelength can be at 3 ~ 7 mu m wavebands.For the judgement of laser instrument quality, mainly be by measuring its electric current-luminous power characteristic (I-P characteristic), electric current-voltage characteristic (I-V characteristic) and sharp spectrum, the fluorescence spectrum characteristic etc. of penetrating.The middle-infrared band semiconductor laser is because free carrier absorbs and non-radiative compound jump ratio near infrared laser is high a lot, and QCL generally is made of tens grades cascade structure, the efficient of single-stage is still lower, so threshold current density is bigger, and driving voltage is also higher.Usually the threshold current of ridge waveguide structure laser instrument can reach hundreds of milliamperes, even several amperes, nearly ten volts of driving voltages bear excessive power for avoiding device, and it is operated under the short pulse low duty ratio drive condition.In addition, the a series of intrinsic properties and the extrinsic property of device, penetrate spectrum, thermal characteristics etc. as swashing, often need to adopt pulsewidth and the adjustable drive system of dutycycle to characterize on a large scale, so must adopt the inherent characteristic of the impulsive measurement system of big electric current with infrared semiconductor laser in adapting to, heat sink temperature also often needs to regulate in very wide scope.Laser instrument for middle-infrared band, during its spectral characteristic is measured except that the more special drive condition of needs, also need consider the influence of room temperature background radiation, this is because the energy of room temperature background radiation also mainly drops on middle-infrared band, and its intensity is higher, Chang Keyu needs the photometry signal suitable even higher, can cause interference even flood measured signal in measurement, and this just must take special measure in measurement.Though conventional semiconductor laser measuring system has developed comparatively ripely since the seventies, and there are many commodity measuring systems to occur, but only be suitable for the laser instrument of visible light and near-infrared band wave band, the range of adjustment of its measurement wave band, driving force and pulse parameter etc. all is difficult to satisfy the test request of the middle-infrared band semiconductor laser that comes out the nineties.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor laser of setting up the big electric current that adapts to middle-infrared band, high voltage, short pulse width, very wide pulse parameter range of adjustment and heat sink temperature range of adjustment to measure the solution of characterization system.Native system is a pervasive system, except that the measurement that is used for middle-infrared band semiconductor laser characteristic, also is adapted to the feature measurement of the semiconductor laser of its all band simultaneously.
Measurement characterization system provided by the invention is made up of two parts, i.e. the software section of hardware components and control hardware.
One, hardware components
Mainly forming of this measurement characterization system by 5 parts, they are respectively: 1) based on Fourier transform spectrometer, and introduce the sharp spectral measurement system (comprising fourier transform infrared spectrometer and lock-in amplifier etc.) of penetrating of double modulation technology, 2) based on the drive system of wide region pulse signal generator, 3) based on digital oscilloscope, current probe and in the measurement supervisory system of infrared eye, 4) based on the computer control system of general parallel interface card (GPIB), 5) heat sink refrigerator and temperature control system etc.The structural frames signal of infrared semiconductor laser measurement characterization system as shown in Figure 1 in whole.
During measurement, the testing laser device places on the cold head of refrigerator, and its driving pulse electric current is supplied with by pulse signal generator.The injection current signal waveform of laser instrument is taken out by current probe, measures with digital oscilloscope.Voltage on driving voltage and the optical power monitoring detector also thus oscillograph measure.Digital oscilloscope and pulse signal generator all by gpib bus by computing machine control, measurement and data acquisition process.The test board of native system, heat sink temperature control and laser optical power detector can require to select for use according to different laser instruments, and select for use different FTIR spectral measurement detectors, beam splitter and optical power monitoring to measure detector to obtain the optimum measurement effect according to different measurement wave bands.Wherein detector has: Si (≤1.1 μ m, working and room temperature), InGaAs (≤1.6 μ m, working and room temperature), Ge (≤1.8 μ m, working and room temperature), InSb (≤5 μ m, LN
2Cooling), HgcdI (≤12 μ m, LN
2Cooling) etc., beam splitter has Quartz, CaF
2, KBr etc.
Important technological parameters is:
Measure wave band: 0.4-12 μ m,
Spectral resolution: 0.125cm
-1
The measuring light power bracket: the nW level is to the W level
Driving pulse wide tuning range: 10ns-150ms
Driving pulse duty cycle adjustment scope: 0.01%-99.99%
Electric current and voltage driving force: 100V/2A
Heat sink temperature range of control: 10K-350K (refrigeration of helium compression cycle),
0 ℃-100 ℃ (one-level thermoelectric cooling)
Heat sink temperature-controlled precision: ± 0.3K
Two, software section
The programming software that the present invention adopts is the TESTPOINT of CEC company, and adopts the Object oriented programming mode, and many details of operations are encapsulated in each object.As controlling certain instrument that utilizes gpib interface to link to each other, give and give the identical GPIB address of instrument in the GPIB address of a GPIB object in the attribute of this object as long as choose, just can realize by the control of computing machine this instrument by instrument control command to this instrument transmission standard.Whole measuring system is all carried out work under the Windows environment, finish every function by the menu mode operation, can finish I-P, I-V and spectral measurement etc. easily.
From the above mentioned, compare with conventional semiconductor laser characteristic measuring system, patent of the present invention has five big advantages:
First: the precision height.Employing is based on the measuring method of direct waveform measuring technique, and by connecting digital oscillographic current measurement probe monitoring injection current, measurement is directly perceived, precision is high, and speed is fast.
Second: owing to adopt the Object oriented programming mode, and all surveying instruments are connected with gpib bus, patent of the present invention have safety, fast, data reliably, rational characteristics.
The 3rd: the hardware syndeton is simple, has friendly operation interface, is beneficial to control, record hardware setting and processing, output measurement result.
The 4th: this system penetrates spectral characteristic and can carry out the labor except and swashing I-V, I-P characteristic, also can be to the ability of the influence of the output power of device and thermal characteristics etc. etc. being analyzed such as drive pulse parameters.
The the 5th: adopt tunable steps, in the scope of maximum operating currenbt 2A, device is carried out continuous coverage, and obtain I-P or I-V curve under the specified temp.Can obtain 8 curves under the different condition at most simultaneously in order to compare.
Description of drawings
Fig. 1 is the synoptic diagram of red wave band semiconductor laser performance measure characterizes system in a kind of provided by the invention.
Fig. 2 is the I-P family curve that utilizes the 2 mu m waveband AlGaAsSb/InGaAsSb multiple quantum well lasers that this measurement characterization system records.Abscissa is electric current (mA) among the figure, and ordinate is machine glazing power (mW).
Fig. 3 is the spectral pattern of penetrating that utilizes 2 mu m waveband AlGaAsSb/InGaAsSb multiple quantum well lasers that this measurement characterization system records, and abscissa is wavelength (μ m) among the figure, and ordinate is intensity (relative unit).
Fig. 4 is I-P and the I-V family curve that utilizes the 8 mu m waveband InAlAs/InGaAs/InP quantum cascade laser that this measurement characterization system records, and abscissa is electric current (A) among the figure, and left side ordinate is luminous power (relative unit); Right side ordinate is voltage (V).
Fig. 5 is a laser spectrum signature of utilizing the 8 mu m waveband InAlAs/InGaAs/InP quantum cascade laser that this measurement characterization system records, and abscissa is wavelength (μ m), and lower cross base is designated as wave number (cm
-1) ordinate is intensity (relative unit).
Embodiment
Embodiment below by accompanying drawing further specifies substantive distinguishing features of the present invention and advance, but limits the present invention absolutely not, also is that the present invention is confined to embodiment absolutely not.
The measurement of embodiment 12 mu m waveband AlGaAsSb/InGaAsSb multiple quantum well lasers
1, earlier chip of laser is positioned on the microprobe test board by the thermoelectric cooling temperature control, and directly adds drive current (laser instrument is the ridge waveguide type in the present embodiment, duct width 2.5 μ m, the long 700 μ m in chamber) with microprobe.
2, connect each hardware device by system chart.Injecting liquid nitrogen in the InSb detector cools off.
3, open the power supply of equipment such as computing machine, digital oscilloscope, pulse signal generator, FTIR spectrometer, lock-in amplifier, heat sink temperature controller.
4, heat sink temperature is adjusted to temperature required (being 0-60 ℃ in the present embodiment, 10 ℃ of steppings).
5, operational system Control Software is on computers carried out initialization (measurement parameter of pulsewidth, cycle, digital oscilloscope etc. promptly is set, and pulsewidth is 1 μ s in the present embodiment, and the cycle is 100KHz) to experiment condition.
6, upper current limit value (being 500mA among the embodiment) and suitable pulse voltage variation range, step-length equivalence will be set as required.
7, click Start button on the program interface, prediction laser diode current and the power monitoring detector voltage waveform through calibrating are selected rational data point.
8, click Start button on the program interface, beginning is formally measured, and obtains I-P curve such as Fig. 2 of this multiple quantum well laser.
9, fixed drive condition (drive current is 200mA in the present embodiment, and pulsewidth is 1 μ s, and the cycle is 100KHz) records sharp spectrum such as Fig. 3 of penetrating under each condition by the FTIR spectrometer.The measurement of embodiment 28 mu m waveband InAlAs/InGaAs/InP quantum cascade laser
1, packaged chip of laser is installed on the cold head by helium compression cycle refrigerator, connects the driving on line, seal exocoel and vacuumize, beginning refrigeration.
2, connect each hardware device by system chart.Injecting liquid nitrogen in the HgcdI detector cools off.
3, open the power supply of equipment such as computing machine, digital oscilloscope, pulse signal generator, FTIR spectrometer, lock-in amplifier, heat sink temperature controller.
4, heat sink temperature is adjusted to temperature required (being 20-200K stepping 30K among the embodiment).
5, operational system Control Software is on computers carried out initialization (promptly be provided with pulsewidth is 100ns in the present embodiments such as measurement parameter of pulsewidth, cycle, digital oscilloscope, the cycle is 20KHz) to experiment condition.
6, upper current limit value (being 1000mA among the embodiment) and suitable pulse voltage variation range, step-length equivalence will be set as required.
7, click Start button on the program interface, prediction laser diode current and the power monitoring detector voltage waveform through calibrating are selected rational data point.
8, click Start button on the program interface, beginning is formally measured, and obtains I-P and I-V curve such as Fig. 4 of this multiple quantum well laser.
9, fixed drive condition (drive current is a little more than the threshold current of laser instrument under the corresponding temperature in the present embodiment, and pulsewidth is 10ns, and the cycle is 20KHz) records sharp spectrum such as Fig. 5 of penetrating under each condition by the FTIR spectrometer.
Claims (7)
1, a kind of characterization system of middle-infrared band semiconductor laser performance measurement is made up of the software section of hardware components and control hardware, it is characterized in that:
(1) hardware components is made up of 5 parts, is respectively Fourier transform spectrometer, and the sharp spectral measurement system of penetrating of introducing the double modulation technology; Drive system based on the wide region pulse signal generator; Measurement supervisory system based on digital oscilloscope current probe and middle infrared eye; Computer control system based on general parallel interface card; Heat sink refrigerator and temperature control system;
(2) programming software of software section is the TESTPOINT of CEC company, and adopts the Object oriented programming mode.
2, by the characterization system of the described a kind of middle-infrared band semiconductor laser performance measurement of claim 1, it is characterized in that the sharp spectral measurement system of penetrating of described introducing double modulation technology comprises fourier transform infrared spectrometer and lock-in amplifier.
3, press the characterization system of the described a kind of middle-infrared band semiconductor laser performance measurement of claim 1, the pulse wide tuning range that it is characterized in that described drive system based on the wide region pulse signal generator is 10ns-100ms, and driving pulse duty cycle adjustment scope is 0.01-99.99%.
4,, it is characterized in that described middle infrared eye or wave band≤1.1 μ m, the Si of working and room temperature by the characterization system of described a kind of this semiconductor laser of the middle-infrared band performance measurement of claim 1; Or wave band≤1.6 μ m, the InGaAs of working and room temperature; Or wave band≤1.8 μ m, the Ge of working and room temperature, or wave band≤5 μ m, the InSb of cooled with liquid nitrogen; Or wave band≤wave band 12 μ m, the HgCdI of cooled with liquid nitrogen; Beam splitter is quartz or CaF
2Or KBr.
5, by the characterization system of the described a kind of middle-infrared band semiconductor laser performance measurement of claim 1, it is characterized in that described heat sink refrigerator heat sink temperature range of control is 10K-350K when the refrigeration of helium compression cycle; General thermoelectric cooling is 0-100 ℃; Temperature-controlled precision ± 0.3K.
6, press the characterization system of the described a kind of middle-infrared band semiconductor laser performance measurement of claim 1, it is characterized in that described employing Object oriented programming mode, give and give the identical address of instrument in the GPIB address of a GPIB object in the attribute of this object as long as choose, realize control to this instrument by the instrument control command that this instrument is sent standard, whole measuring system is worked under the Window environment.
7, by the characterization system of the described a kind of middle-infrared band semiconductor laser performance measurement of claim 1, it is characterized in that measurement wavelength band 0.4～1.2 μ m of measuring system, resolution: 0.125cm-1, reference optical power are that the nW level is to the W level.
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| CN 01132286 CN1358986A (en) | 2001-11-23 | 2001-11-23 | Characterization system for property measurement of intermediate infrared waveband semiconductor laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132100B (en) * | 2007-07-11 | 2011-06-29 | 南开大学 | Method for measuring intra-cavity loss of LD pumping solid state laser device |
| CN107656159A (en) * | 2017-10-09 | 2018-02-02 | 常州工学院 | Novel automatic pyroelectric effect test system and method |
| CN111638387A (en) * | 2020-06-12 | 2020-09-08 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN112147490A (en) * | 2020-11-26 | 2020-12-29 | 上海菲莱测试技术有限公司 | Method and system for laser chip integration test |
-
2001
- 2001-11-23 CN CN 01132286 patent/CN1358986A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132100B (en) * | 2007-07-11 | 2011-06-29 | 南开大学 | Method for measuring intra-cavity loss of LD pumping solid state laser device |
| CN107656159A (en) * | 2017-10-09 | 2018-02-02 | 常州工学院 | Novel automatic pyroelectric effect test system and method |
| CN111638387A (en) * | 2020-06-12 | 2020-09-08 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN111638387B (en) * | 2020-06-12 | 2021-08-03 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN112147490A (en) * | 2020-11-26 | 2020-12-29 | 上海菲莱测试技术有限公司 | Method and system for laser chip integration test |
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