CN1347138A - Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor - Google Patents
Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor Download PDFInfo
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- CN1347138A CN1347138A CN 00129590 CN00129590A CN1347138A CN 1347138 A CN1347138 A CN 1347138A CN 00129590 CN00129590 CN 00129590 CN 00129590 A CN00129590 A CN 00129590A CN 1347138 A CN1347138 A CN 1347138A
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Abstract
A heterogenous liquid-phase epitaxial growth process of magnetic semiconductor or magnetic semiconductor/semiconductor includes such steps as using GaAs monocrystal as substrate, preparing growth container from graphite or quartz, loading Ga, Mn and GaAs proportionally in said container, fully dissolving and mixing in epitaxial furnace, and over-cold epitaxial growth at 573-1073 deg.K.
Description
The invention provides a kind of heterogeneous semiconductor liquid-phase epitaxial growth process, be meant a kind of heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor especially.
Semiconductor and magnet are two big fields of solid-state physics, and are two kinds of important materials on the commercial Application.Both being combined, make a kind of material not only have semi-conductive characteristic but also have the characteristic of magnet, still is that material science all has crucial academic significance to fundamental physics.And in practical application, have more great value.
Realize that magnet and semiconductor are in conjunction with two kinds of approach are arranged.The first is put generation with magnetic ion to semiconductor and is mixed, and forms the magnetic semiconductor alloy, and this class material is called as dilute magnetic semiconductor.They have some peculiar character, as huge Zeeman splitting, huge faraday rotation, huge negative magnetoresistance etc.This class material is expected to be used for novel magnetoelectricity, magneto-optic and photoelectric device.Another kind method is, magnet and the synthetic heterostructure of semiconductor junction.This heterostructure comprises single heterojunction, double heterojunction and multilayer hetero-structure.In many this structures, all found tunnel magneto resistance (TMR), caused scientific worker's great interest in nearly two ten years.They have huge potential application foreground on the magnetoelectricity device, can be used for making high-density storage, plane and vertical transistor or the like.With the random asccess memory that magnetic semiconductor is made, when outage, can not lose stored information.
Up to now, the method for preparing magnet/semiconductor/heterostructure mainly is molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), evaporation and sputter etc., but does not see the report with growth by liquid phase epitaxy method.
The object of the present invention is to provide a kind of heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor, its liquid phase epitaxy, be in the liquid phase epitaxy stove, the solution (or melt) that contains solute make by crossing cold solute on substrate with the epitaxially grown method of form of film; Liquid phase epitaxy is grown under the kinetic balance condition, and its advantage is an epitaxial loayer chemical stability height, and equipment is simple, and growth cost is low.
Technical scheme of the present invention is:
(1) be substrate with GaAs (GaAs), silicon (Si), gallium antimonide single-chips such as (GaSb);
(2) make growing container (growth boat) with graphite or quartz;
(3) with pure gallium (Ga), pure violent (Mn) and GaAs (GaAs) crystal Ga in proportion
xMn
yAs
1-x-yPutting into growing container, after abundant dissolving (mixing), is to carry out epitaxial growth under the condition of 2-10 degree in degree of subcooling in epitaxial furnace;
(4) growth solution Ga
xMn
yAs
1-x-yMiddle x and y are atomic ratio, and its span is: x:0.0-1.0, y:0.0-1.0, and 0.0＜x+y＜1.0;
(5) as required can be on GaAs (GaAs), silicon (Si), gallium antimonide single crystalline substrate sheets such as (GaSb) direct growth Ga
xMn
yAs
1-x-yEpitaxial loayer, also grown buffer layer on substrate earlier, and then growth Ga
xMn
yAs
1-x-yEpitaxial loayer;
(6) Ga that can on substrate, grow
xMn
ys
1-x-ySingle layer structure, the sandwich construction of also can growing as required;
(7) growth temperature range: 573K-1073K.
Another technical scheme of the present invention is:
(1) be substrate with gallium antimonide (GaSb), GaAs (GaAs), silicon single-chips such as (Si);
(2) make growing container (growth boat) with graphite or quartz;
(3) with pure gallium (Ga), pure manganese (Mn) and gallium antimonide (GaSb) crystal Ga in proportion
xMn
ySb
1-x-yPutting into growing container, after abundant dissolving (mixing), is to carry out epitaxial growth under the condition of 2-10 degree in degree of subcooling in epitaxial furnace;
(4) growth solution Ga
xMn
ySb
1-x-yMiddle x and y are atomic ratio, and its span is: x:0.0-1.0; Y:0.0-1.0; 0.0＜x+y＜1.0;
(5) as required can be on single-chip substrates such as GaSb, Si, GaAs direct growth Ga
xMn
ySb
1-x-yEpitaxial loayer, also grown buffer layer on substrate earlier, and then growth Ga
xMn
ySb
1-x-yEpitaxial loayer;
(6) Ga that can on substrate, grow
xMn
ySb
1-x-ySingle layer structure, the sandwich construction of also can growing as required;
(7) growth temperature range: 573K-973K.
For further specifying feature of the present invention and technical scheme, the present invention is done a detailed description below in conjunction with embodiment;
Compare with other method for preparing magnetic semiconductor material, liquid phase epitaxy is in the liquid phase epitaxy stove, the solution (or melt) that contains solute make by crossing cold solute on substrate with the epitaxially grown method of form of film.Liquid phase epitaxy is grown under the kinetic balance condition, and its advantage is an epitaxial loayer chemical stability height, and equipment is simple, and growth cost is low.Magnetic semiconductor material with growth by liquid phase epitaxy method both can be made giant reluctivity device, also can make tunnel magnetoresistance device.
Embodiment 1
(1) capital equipment of realization invention:
The liquid phase epitaxy stove
Oil-sealed rotary pump+diffusion vacuum pump (or other vacuum equipment)
Temperature controller
Hydrogen generator (or hydrogen purification equipment)
Crystal reaction tube
The growth boat
(2) will put into growing container (graphite boat) in the ratio of regulation in the technology path 1 (4) through the pure gallium (Ga) of chemical cleaning, pure violent (Mn) and GaAs (GaAs) crystal.
(3) will put into growing container (graphite boat) through GaAs (GaAs) single-chip of chemical cleaning.
(4) vacuumize the vacuum degree that makes in the growth crystal reaction tube and be better than 2Pa.
(5) logical hydrogen, 0.1 liter/minute of flow after 30 minutes, is sent into crystal reaction tube and is added the hot melt source in the epitaxial furnace.
(6) in 800 ℃ of flowing hydrogen environment, melted the source 2 hours.
(7) at 750 ℃, rate of temperature fall is to grow 30 minutes under 0.1 ℃ of/minute condition.
According to above-mentioned growth technique, on the arsenide gallium monocrystal substrate, grow the GaMnAs film, to analyze through the electron energy scattering spectra, the component of epitaxial loayer is: Ga 48.2%, and As 51.4%, Mn0.4%.
Embodiment 2
(1) capital equipment of realization invention:
The liquid phase epitaxy stove
Oil-sealed rotary pump+diffusion vacuum pump (or other vacuum equipment)
Temperature controller
Hydrogen generator (or hydrogen purification equipment)
Crystal reaction tube
The growth boat
(2) will put into growing container (graphite boat) in the ratio of regulation in the technology path 2 (4) through the pure gallium (Ga) of chemical cleaning, pure violent (Mn) and gallium antimonide (GaSb) crystal.
(3) will put into growing container (graphite boat) through gallium antimonide (GaSb) single-chip of chemical cleaning.
(4) vacuumize the vacuum degree that makes in the growth crystal reaction tube and be better than 2Pa.
(5) logical hydrogen, 0.1 liter/minute of flow after 30 minutes, is sent into crystal reaction tube and is added the hot melt source in the epitaxial furnace.
(6) in 650 ℃ of flowing hydrogen environment, melted the source 2 hours.
(7) at 600 ℃, rate of temperature fall is to grow 30 minutes under 0.1 ℃ of/minute condition.
According to above-mentioned growth technique, on the gallium antimonide monocrystalline substrate, grow the GaMnSb film, to analyze through the electron energy scattering spectra, the component of epitaxial loayer is: Ga 46.2%, and As 50.6%, Mn3.2%.
The present invention compared with prior art has, epitaxial loayer chemical stability height, and equipment is simple, gives birth to The low advantage of long expense.
Claims (4)
1, a kind of heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor is characterized in that, comprises the steps:
(1) be substrate with single-chips such as GaAs, silicon, gallium antimonides;
(2) make growing container with graphite or quartz;
(3) with pure gallium, pure manganese and gallium arsenide Ga in proportion
xMn
yAs
1-x-yPutting into growing container, after fully dissolving, mixing, is to carry out epitaxial growth under the condition of 2-10 degree in degree of subcooling in epitaxial furnace;
(4) growth solution Ga
xMn
yAs
1-x-yMiddle x and y are atomic ratio;
(5) as required can be on single-chip substrates such as GaAs, silicon, gallium antimonide direct growth Ga
xMn
yAs
1-x-yEpitaxial loayer, also grown buffer layer on substrate earlier, and then growth Ga
xMn
yAs
1-x-yEpitaxial loayer;
(6) Ga that can on substrate, grow
xMn
yAs
1-x-ySingle layer structure, the sandwich construction of also can growing as required;
(7) growth temperature range: 573K-1073K.
2, heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor according to claim 1 is characterized in that, the atomic ratio of step (4) wherein, and its span is: x:0.0-1.0; Y:0.0-1.0; 0.0＜x+y＜1.0.
3, a kind of heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor is characterized in that, comprises the steps:
(1) be substrate with single-chips such as gallium antimonide, silicon, GaAs;
(2) make growing container with graphite or quartz;
(3) with pure gallium, pure manganese and gallium antimonide crystal Ga in proportion
xMn
ySb
1-x-yPutting into growing container, after fully dissolving, mixing, is to carry out epitaxial growth under the condition of 2-10 degree in degree of subcooling in epitaxial furnace;
(4) growth solution Ga
xMn
ySb
1-x-yMiddle x and y are atomic ratio;
(5) as required can be on single-chip substrates such as gallium antimonide, silicon, GaAs direct growth Ga
xMn
ySb
1-x-yEpitaxial loayer, also grown buffer layer on substrate earlier, and then growth Ga
xMn
ySb
1-x-yEpitaxial loayer;
(6) Ga that can on substrate, grow
xMn
ySb
1-x-ySingle layer structure, the sandwich construction of also can growing as required;
(7) growth temperature range: 573K-973K.
4, heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor according to claim 3 is characterized in that, the atomic ratio of step (4) wherein, and its span is: x:0.0-1.0; Y:0.0-1.0; 0.0＜x+y＜1.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB00129590XA CN1134047C (en) | 2000-10-08 | 2000-10-08 | Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB00129590XA CN1134047C (en) | 2000-10-08 | 2000-10-08 | Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN1347138A true CN1347138A (en) | 2002-05-01 |
| CN1134047C CN1134047C (en) | 2004-01-07 |
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369203C (en) * | 2004-12-03 | 2008-02-13 | 中国科学院半导体研究所 | Liquid phase epitaxial growth method for growing indium-arsenic-antimony thin film on gallium-arenic substrate |
| CN100457964C (en) * | 2005-05-19 | 2009-02-04 | 中国科学院半导体研究所 | Process for epitaxial growth of In-As-Sb film on Ga-As substrate by magnetron sputtering method |
| CN102169820A (en) * | 2011-01-18 | 2011-08-31 | 中国科学院半导体研究所 | Method for preparing GaAs imaging substrate distributed in different stress densities |
| CN110634639A (en) * | 2019-08-28 | 2019-12-31 | 松山湖材料实验室 | Method for regulating magnetic property of diluted magnetic semiconductor and its product |
-
2000
- 2000-10-08 CN CNB00129590XA patent/CN1134047C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369203C (en) * | 2004-12-03 | 2008-02-13 | 中国科学院半导体研究所 | Liquid phase epitaxial growth method for growing indium-arsenic-antimony thin film on gallium-arenic substrate |
| CN100457964C (en) * | 2005-05-19 | 2009-02-04 | 中国科学院半导体研究所 | Process for epitaxial growth of In-As-Sb film on Ga-As substrate by magnetron sputtering method |
| CN102169820A (en) * | 2011-01-18 | 2011-08-31 | 中国科学院半导体研究所 | Method for preparing GaAs imaging substrate distributed in different stress densities |
| CN102169820B (en) * | 2011-01-18 | 2012-11-14 | 中国科学院半导体研究所 | Method for preparing GaAs imaging substrate distributed in different stress densities |
| CN110634639A (en) * | 2019-08-28 | 2019-12-31 | 松山湖材料实验室 | Method for regulating magnetic property of diluted magnetic semiconductor and its product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1134047C (en) | 2004-01-07 |
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