CN1344810A - In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material - Google Patents

In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material Download PDF

Info

Publication number
CN1344810A
CN1344810A CN 01141978 CN01141978A CN1344810A CN 1344810 A CN1344810 A CN 1344810A CN 01141978 CN01141978 CN 01141978 CN 01141978 A CN01141978 A CN 01141978A CN 1344810 A CN1344810 A CN 1344810A
Authority
CN
China
Prior art keywords
mosi
sic
temperature
reaction
matrix material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 01141978
Other languages
Chinese (zh)
Other versions
CN1215185C (en
Inventor
孙祖庆
张来庆
杨王玥
张跃
傅晓伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology Beijing USTB
Original Assignee
University of Science and Technology Beijing USTB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology Beijing USTB filed Critical University of Science and Technology Beijing USTB
Priority to CN 01141978 priority Critical patent/CN1215185C/en
Publication of CN1344810A publication Critical patent/CN1344810A/en
Application granted granted Critical
Publication of CN1215185C publication Critical patent/CN1215185C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Ceramic Products (AREA)

Abstract

By means of controlling the compounding technological parameters of in-situ, eliminating the low temperature solid-solid reaction among Mo, Si and C element powder and utilizing the their soild-liquid reaction, composite MoSi2-SiC powder is in-situ compounded and densified through secondary heating so as to prepare fine dispersed SiC particle reinforced MoSi2 composite two-phase material with clean interface and no SiO2 glass phase and other transition phases. The composite material has high temperature oxidation resistance of MoSi2, improved low temperature and high temperature mechanical performance as well as the preparation process is easy to control and simple in equipment.

Description

A kind of in-situ compounding process for preparing silicon carbide particle reinforced molybdenum silicide based composite material
Technical field:
The invention belongs to the alloy material preparation field, particularly the preparation of intermetallic compound silicon molybdenum thing based composites.
Background technology:
MoSi 2Has fusing point, lower density (6.24g/cm up to 2030~2050 ℃ 3), good resistance of oxidation with the thermal conductivity of metal same level and low thermal expansivity, can satisfy the basic demand as high-temperature structural material.The more important thing is that though this compound shows the fragility same with pottery in room temperature, it has the tough-brittle transition behavior, more than ductile-brittle transition temperature, the motion of dislocation and significant reaction activate, and intensity is controlled by plastic deformation.Therefore, under use temperature, will have higher reliability than structural ceramics.In addition, MoSi 2Can or form matrix material with considerable element and compounds aurification, make it keep Thermodynamically stable.Like this, just multiple means and possibility are provided for improving performance.Therefore, MoSi 2Be considered to the high-temperature structural material that has competitive power that occurs after the structural ceramics of Ni, Ti superalloy and use temperature>1000 of 800~1000 ℃ of use temperatures ℃, getting a good chance of as use temperature is that 1000~1600 ℃ various high-temperature structural materials are used.
But low toughness under the room temperature, high temperature down with the deficiency of ceramic phase specific tenacity, particularly lower creep resistance is hanged down and has been limited MoSi 2Application as high-temperature structural material.Therefore keeping MoSi 2Under the prerequisite that oxidation-resistance does not reduce substantially, how to improve MoSi 2Low-temperature flexibility and hot strength are exploitation MoSi 2The key of high-temperature structural material.Existing work shows that soft or hard second phase can be improved its room temperature and mechanical behavior under high temperature simultaneously.In numerous enhancing bodies, SiC has good chemical stability, high intensity and Young's modulus, and low thermal expansivity, high fusing point is with MoSi 2Good chemical compatibility and physical compatibility are arranged, same MoSi 2-sample has good oxidation-resistance, is considered to strengthen MoSi 2One of the most effective enhancing body.
At present, preparation MoSi 2The original position recombining process of-SiC matrix material has: replacement(metathesis)reaction, reactive plasma deposition, mechanical alloying, XD TM, burning synthetic induction heating thermal explosion pattern, the auxiliary SHS that reaches of electric field add quasi-hot isostatic pressing simultaneously, and the reaction of direct hot pressing element simple substance mixture and element powders is synthetic synchronously etc.Wherein, replacement(metathesis)reaction (Henager C H Jr, et al.Mater.Sci.Eng.A, 1992, A155:109~114), reactive plasma deposition (Lawrynowicz D E, et al.High-Temperature Ordered IntermetallicsAlloy VI, P923.), mechanical alloying (Jayashankar S, et al.J.Mater.Res., 1428~1441.), XD 1993,8 (6): TMIn the sample of (Aikin R M Jr, et al.Mater.Sci.Eng.A, 1992, A155:121~133.) these prepared except MoSi 2Outside the SiC two-phase, all there is other transition phases (Mo for example to some extent 5Si 3, Mo ≤ 5Si 3C ≤ 1Deng) and glassy phase, and former three second phase volume fraction can not arbitrarily be regulated and control XD TMProcess using hot pressing and hot isostatic pressing two procedures are compact formed, and preparation section is many, control is quite complicated; Burning synthetic sample is because the too fast structural constituent of reaction is difficult to control, there is macrosegregation, tissue odds is even, sometimes also reaction is incomplete, the hot-forming back second phase SiC particle is obviously assembled, size big (up to 20 μ m), and equipment complexity (Chrysanthou A, et al.J.Mater.Sci., 1996,31 (16): 4221~4226; Bartlett A H et al.J.Mater.Sci., 1998,33 (6): 1653~1660.); Direct hot pressing element simple substance mixture (Alman D E, et al.Scrip.Metall.Mater., 1994,273~278.) and synthetic synchronously (the Alman D E of the reaction of element powders 31 (3):, et al.Scrip.Metall.Mater., 1993,28 (12): 1525~1530) also have transition phase in Zhi Bei the sample, and the former C fiber does not change into SiC fully, reaction not exclusively, the synthetic synchronously compact formed matrix material of hot isostatic pressing technique that adopts of the reaction of element powders, the equipment complexity, the cost height, the second phase SiC particle size is big, assemble serious, skewness.The MoSi of above-mentioned many prepared 2The mechanical property that the appearance meeting of glassy phase significantly reduces material in the-SiC matrix material is mechanical behavior under high temperature especially, and the second phase SiC particle size is big, assemble remarkable improvement serious, that skewness also is unfavorable for composite materials property, and Mo 5Si 3Can reduce the high temperature oxidation resistance of matrix material etc. the existence of transition phase.
The objective of the invention is to prepare silicon carbide particle reinforced molybdenum silicide based composite material, do not reducing MoSi by control original position recombining process parameter 2Under the prerequisite of high temperature oxidation resistance, improve MoSi to greatest extent 2The low temperature of-SiC matrix material and mechanical behavior under high temperature, and technology is easy to control, equipment is simple.
Summary of the invention:
The present invention is by control original position recombining process parameter, solid eliminate low temperature between Mo, Si and the C element powder solid-reaction, and utilize the solid-liquid reaction original position between them to synthesize MoSi 2-SiC composite powder, and with fine and close this MoSi of secondary hot pressing 2-SiC composite powder prepares interface cleaning, no SiO 2Glassy phase and Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, small and dispersed SiC particle to strengthen MoSi 2Two-phase composite material.The concrete related MoSi of the present invention 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-0%SiC~MoSi 2-100%SiC, the content of element powders calculates by the stoichiometric ratio of corresponding composition proportioning matrix material.The concrete preparation process of matrix material is as follows: be pressed into the green compact sample after element powders is weighed up and mixes by proportioning, green density is 60~75% of a mixed powder theoretical density.The green compact sample carries out reaction in and synthesizes after 400~600 ℃ of vacuum outgass in the mobile pure argon, stove is chilled to room temperature then.Reaction in synthetic technology is: 1410~1470 ℃ of temperature, 120 ℃/min of temperature rise rate, soaking time 0.5~1h.After material fragmentation with reaction in after synthetic becomes 180 μ m~450 μ m powder, carry out hot-forming, 1700~1750 ℃ of temperature, soaking time 1~2h, 30~the 40MPa that exerts pressure is cooled to 400~500 ℃ with the speed of 10~20 ℃/min, naturally cools to room temperature at last.Decompression gradually behind pressurize to 1200 in the process of cooling after hot pressing~1300 ℃.All the time feeding mobile Ar gas in the hot pressing protects.
The invention has the advantages that by control original position recombining process parameter, solid can eliminate low temperature between Mo, Si and the C element powder solid-reaction, effectively utilize the solid-liquid reaction original position between them to synthesize MoSi 2~SiC composite powder by secondary hot pressing, makes the matrix material of the densification of acquisition can guarantee to have only MoSi again 2With the SiC two-phase, interface cleaning, no SiO 2Glassy phase and Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, the second phase SiC particle small and dispersed to be distributed in MoSi 2On the matrix, therefore, this matrix material can be guaranteed do not reducing MoSi 2In the time of high temperature oxidation resistance, can improve the low temperature and the mechanical behavior under high temperature of matrix material to greatest extent.Because the present invention only need control original position recombining process parameter, need not hot isostatic apparatus, so technology easy, be easy to control, equipment is simple.
Description of drawings:
Fig. 1 is MoSi 2The XRD spectral line of-SiC matrix material.
Fig. 2 is MoSiC30 matrix material MoSi 2HREM picture with SiC two-phase phase boundary.
Fig. 3 is the metallographic structure of MoSiC30 matrix material.
Fig. 4 is MoSi 2-SiC matrix material room temperature fracture toughness property is with the variation of SiC volume fraction.
Fig. 5 is single MoSi 2(a) and MoSiC30 (b) compression true stress-strain curve.
Synthetic and the commercial powder MoSi that mixes of hot pressing of original position when Fig. 6 is stress 80MPa 2The creep curve of-30%SiC relatively.
Embodiment
Embodiment: test MoSi 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-30%SIC writes a Chinese character in simplified form into MoSiC30, and the content of element powders is calculated as by the stoichiometric ratio of forming MoSiC30: Mo: Si: C=51.71: 42.90: 5.39wt%.Used starting material are Mo powder, Si powder and Graphite Powder 99, and mean particle size and purity are Mo:8 μ m, 99.0%; Si:7 μ m, 99.0%; C:22, μ m, 99.9%.After element powders weighed up by proportioning, add the different ZrO of an amount of diameter 2Ball and dehydrated alcohol, wet mixing 10h on the roller ball mill.The powder that mixes is pressed into φ 30 * 15mm circle base sample, and pressed density is 70% of a mixed powder theoretical density.Circle base sample carries out original position in the pure argon 99.91% after 500 ℃ of vacuum outgass synthetic, and stove is chilled to room temperature then.Concrete technology is: 1450 ℃ of temperature, 120 ℃/min of temperature rise rate, soaking time 1h.After material fragmentation with reaction in after synthetic becomes 180 μ m powder, carry out hot-formingly, pressed compact is of a size of about φ 50mm * 8mm, 1740 ℃ of temperature, soaking time 2h, 40MPa exerts pressure, speed with 10 ℃/min is cooled to 500 ℃, naturally cools to room temperature at last.Decompression gradually after the pressurize to 1300 ℃ in the process of cooling after hot pressing.All the time feeding mobile Ar gas in the hot pressing protects.
The MoSiC30 matrix material that obtains through above-mentioned technology only contains MoSi 2With the SiC two-phase, do not contain Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, nor have SiO 2Glassy phase, interface cleanness are seen Fig. 1, Fig. 2.The SiC particle size is 3~5 μ m, and evenly tiny, disperse is distributed in MoSi 2On the matrix, see Fig. 3.The porosity of this matrix material is (0.044 ± 0.014) %, can think to reach complete densification.The room temperature fracture toughness property of this material is than single MoSi 2Have clear improvement, see Fig. 4.1000 ℃, 1200 ℃, 1400 ℃ high temperature compressed flow curve is apparently higher than single MoSi 2, its high-temperature stream varying stress, yield strength significantly improve, and see Fig. 5.Its high temperature creep drag is much higher than the MoSi of the prior powder metallurgy prepared that adopts the commercial mixed powder of hot pressing 2-30%SiC matrix material is seen Fig. 6.

Claims (2)

1, a kind of in-situ compounding process for preparing silicon carbide particle reinforced molybdenum silicide based composite material, MoSi 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-0%SiC~MoSi 2-100%SiC, the content of element powders calculates by the stoichiometric ratio of forming this matrix material, it is characterized in that reaction in synthetic technology is: 1410~1470 ℃ of temperature, temperature rise rate 〉=120 ℃/min, soaking time 0.5~1h.After material fragmentation with reaction in after synthetic becomes-40~-80 order powder, carry out hot-forming, 1700~1750 ℃ of temperature, soaking time 1~2h, 30~the 40MPa that exerts pressure is cooled to 400~500 ℃ with the speed of 10~20 ℃/min, naturally cools to room temperature at last.Decompression gradually after 1200~1300 ℃ in the process of cooling after hot pressing.
2, in-situ compounding process as claimed in claim 1, the preparation that it is characterized in that matrix material are to be pressed into the green compact sample after element powders is weighed up and mixes by proportioning, and green density is 60~75% of a mixed powder theoretical density.The green compact sample carries out reaction in and synthesizes after 400~600 ℃ of vacuum outgass in the mobile pure argon.
CN 01141978 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material Expired - Fee Related CN1215185C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 01141978 CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 01141978 CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Publications (2)

Publication Number Publication Date
CN1344810A true CN1344810A (en) 2002-04-17
CN1215185C CN1215185C (en) 2005-08-17

Family

ID=4676531

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 01141978 Expired - Fee Related CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Country Status (1)

Country Link
CN (1) CN1215185C (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1321092C (en) * 2006-03-14 2007-06-13 西北工业大学 Method for preparing anti-oxidation multiple phase coating of carbon/carbon composite material surface
CN101812622B (en) * 2010-02-08 2011-07-20 吉林大学 Ceramic-intermetallic compound composite material containing binder and preparation method thereof
CN101386551B (en) * 2008-10-29 2011-12-28 陕西科技大学 Method for preparing carbon/carbon compound material nano silicon carbide-silicon molybdenum composite coating
CN104261835A (en) * 2014-09-19 2015-01-07 中南大学 Method for preparing molybdenum disilicide heating element
CN105731471A (en) * 2016-01-28 2016-07-06 陕西科技大学 Preparation method of MoSi2-Mo5Si3-SiO2 composite material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1321092C (en) * 2006-03-14 2007-06-13 西北工业大学 Method for preparing anti-oxidation multiple phase coating of carbon/carbon composite material surface
CN101386551B (en) * 2008-10-29 2011-12-28 陕西科技大学 Method for preparing carbon/carbon compound material nano silicon carbide-silicon molybdenum composite coating
CN101812622B (en) * 2010-02-08 2011-07-20 吉林大学 Ceramic-intermetallic compound composite material containing binder and preparation method thereof
CN104261835A (en) * 2014-09-19 2015-01-07 中南大学 Method for preparing molybdenum disilicide heating element
CN105731471A (en) * 2016-01-28 2016-07-06 陕西科技大学 Preparation method of MoSi2-Mo5Si3-SiO2 composite material
CN105731471B (en) * 2016-01-28 2017-12-05 陕西科技大学 A kind of MoSi2‑Mo5Si3‑SiO2The preparation method of composite

Also Published As

Publication number Publication date
CN1215185C (en) 2005-08-17

Similar Documents

Publication Publication Date Title
CN101215173B (en) Method for preparing ZrB2-SiC-ZrC diphase ceramic material
CN106834878B (en) A kind of method that microwave sintering prepares endogenous high-entropy alloy-base composite material
CN101456737B (en) Boron carbide base composite ceramic and preparation method thereof
JPS5924751B2 (en) Sintered shaped body
CA2178819A1 (en) Low temperature, pressureless sintering of silicon nitride
CN104045350B (en) Method for preparing silicon nitride /silicon carbide ceramic composite by use of reaction sintering process
CN104894641B (en) It is a kind of high fine and close(LaxCa1‑x)B6Polycrystalline cathode material and preparation method thereof
CN108439995B (en) Complex phase ceramic and preparation method thereof
CN102219536A (en) B4C/SiC whisker/SiC multiphase ceramic matrix composite and preparation method thereof
CN109295336A (en) A kind of reticular structure titanium silicon mutually enhances the preparation method of TiAl based composites
CN105859301A (en) Silicon nitride ceramic and preparation method thereof
CN102976760A (en) RE2O3-added ZrB2-SiC composite ceramic material and preparation method thereof
CN101407421B (en) Method for preparing non-grain boundary phase porous silicon nitride ceramic based on siliconizing nitridation
Izhevskyi et al. Microstructure and properties tailoring of liquid-phase sintered SiC
Souto et al. Sintering of commercial mulite powder: Effect of MgO dopant
CN1215185C (en) In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material
Zhang et al. Effects of different types of sintering additives and post-heat treatment (PHT) on the mechanical properties of SHS-fabricated Si3N4 ceramics
JPH0222175A (en) Production and sintering of reaction bonded silicon nitride composite material containing silicon carbide whisker or silicon nitride powder
Abilev et al. Structural-phase state and properties of SiC ceramics obtained by ultrasound-assisted liquid-phase sintering with eutectic additives
Sun et al. Synthesis and consolidation of ternary compound Ti3SiC2 from green compact of mixed powders
Lee et al. Characterization of forsterite ceramics
CN107417271A (en) A kind of preparation method of the bar-shaped brilliant enhancing dimension stone of magnesia alumina spinel of rare earth aluminium (silicon) hydrochlorate
CN109053192A (en) A kind of preparation method of MgAlON transparent ceramic powder
CN108411154A (en) A kind of fire-retardant graphene titanium-aluminium matrix composites and preparation method
JPH0812441A (en) Production of silicon nitride-based sintered compact

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee