CN1344810A - In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material - Google Patents

In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material Download PDF

Info

Publication number
CN1344810A
CN1344810A CN 01141978 CN01141978A CN1344810A CN 1344810 A CN1344810 A CN 1344810A CN 01141978 CN01141978 CN 01141978 CN 01141978 A CN01141978 A CN 01141978A CN 1344810 A CN1344810 A CN 1344810A
Authority
CN
China
Prior art keywords
mosi
sic
temperature
reaction
matrix material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 01141978
Other languages
Chinese (zh)
Other versions
CN1215185C (en
Inventor
孙祖庆
张来庆
杨王玥
张跃
傅晓伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology Beijing USTB
Original Assignee
University of Science and Technology Beijing USTB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology Beijing USTB filed Critical University of Science and Technology Beijing USTB
Priority to CN 01141978 priority Critical patent/CN1215185C/en
Publication of CN1344810A publication Critical patent/CN1344810A/en
Application granted granted Critical
Publication of CN1215185C publication Critical patent/CN1215185C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Ceramic Products (AREA)

Abstract

一种制备碳化硅颗粒增强二硅化钼基复合材料的原位复合方法,主要通过控制原位复合工艺参数,消除Mo、Si和C三元素粉末之间的低温固一固反应,而利用它们之间的固-液反应原位合成MoSi2-SiC复合粉末,并用二次热压致密该MoSi2-SiC复合粉末,来制备界面洁净、无SiO2玻璃相和Mo5Si3,Mo≤5Si3C≤1等其他过渡相、细小弥散SiC颗粒增强MoSi2两相复合材料。使该复合材料在不降低MoSi2抗高温氧化性的前提下,最大限度地改善MoSi2-SiC复合材料的低温和高温力学性能,并且工艺易于控制、设备简单。

An in-situ composite method for preparing silicon carbide particle-reinforced molybdenum disilicide-based composite materials, mainly by controlling the in-situ composite process parameters, eliminating the low-temperature solid-solid reaction between Mo, Si and C three-element powders, and utilizing their The MoSi 2 -SiC composite powder was synthesized in situ by the solid-liquid reaction between them, and the MoSi 2 -SiC composite powder was densified by secondary hot pressing to prepare a clean interface, no SiO 2 glass phase and Mo 5 Si 3 , Mo ≤ 5 Si 3 C ≤ 1 and other transition phases, fine dispersed SiC particles reinforced MoSi 2 two-phase composites. The composite material can maximize the low-temperature and high-temperature mechanical properties of the MoSi 2 -SiC composite material without reducing the high-temperature oxidation resistance of the MoSi 2 , and the process is easy to control and the equipment is simple.

Description

A kind of in-situ compounding process for preparing silicon carbide particle reinforced molybdenum silicide based composite material
Technical field:
The invention belongs to the alloy material preparation field, particularly the preparation of intermetallic compound silicon molybdenum thing based composites.
Background technology:
MoSi 2Has fusing point, lower density (6.24g/cm up to 2030~2050 ℃ 3), good resistance of oxidation with the thermal conductivity of metal same level and low thermal expansivity, can satisfy the basic demand as high-temperature structural material.The more important thing is that though this compound shows the fragility same with pottery in room temperature, it has the tough-brittle transition behavior, more than ductile-brittle transition temperature, the motion of dislocation and significant reaction activate, and intensity is controlled by plastic deformation.Therefore, under use temperature, will have higher reliability than structural ceramics.In addition, MoSi 2Can or form matrix material with considerable element and compounds aurification, make it keep Thermodynamically stable.Like this, just multiple means and possibility are provided for improving performance.Therefore, MoSi 2Be considered to the high-temperature structural material that has competitive power that occurs after the structural ceramics of Ni, Ti superalloy and use temperature>1000 of 800~1000 ℃ of use temperatures ℃, getting a good chance of as use temperature is that 1000~1600 ℃ various high-temperature structural materials are used.
But low toughness under the room temperature, high temperature down with the deficiency of ceramic phase specific tenacity, particularly lower creep resistance is hanged down and has been limited MoSi 2Application as high-temperature structural material.Therefore keeping MoSi 2Under the prerequisite that oxidation-resistance does not reduce substantially, how to improve MoSi 2Low-temperature flexibility and hot strength are exploitation MoSi 2The key of high-temperature structural material.Existing work shows that soft or hard second phase can be improved its room temperature and mechanical behavior under high temperature simultaneously.In numerous enhancing bodies, SiC has good chemical stability, high intensity and Young's modulus, and low thermal expansivity, high fusing point is with MoSi 2Good chemical compatibility and physical compatibility are arranged, same MoSi 2-sample has good oxidation-resistance, is considered to strengthen MoSi 2One of the most effective enhancing body.
At present, preparation MoSi 2The original position recombining process of-SiC matrix material has: replacement(metathesis)reaction, reactive plasma deposition, mechanical alloying, XD TM, burning synthetic induction heating thermal explosion pattern, the auxiliary SHS that reaches of electric field add quasi-hot isostatic pressing simultaneously, and the reaction of direct hot pressing element simple substance mixture and element powders is synthetic synchronously etc.Wherein, replacement(metathesis)reaction (Henager C H Jr, et al.Mater.Sci.Eng.A, 1992, A155:109~114), reactive plasma deposition (Lawrynowicz D E, et al.High-Temperature Ordered IntermetallicsAlloy VI, P923.), mechanical alloying (Jayashankar S, et al.J.Mater.Res., 1428~1441.), XD 1993,8 (6): TMIn the sample of (Aikin R M Jr, et al.Mater.Sci.Eng.A, 1992, A155:121~133.) these prepared except MoSi 2Outside the SiC two-phase, all there is other transition phases (Mo for example to some extent 5Si 3, Mo ≤ 5Si 3C ≤ 1Deng) and glassy phase, and former three second phase volume fraction can not arbitrarily be regulated and control XD TMProcess using hot pressing and hot isostatic pressing two procedures are compact formed, and preparation section is many, control is quite complicated; Burning synthetic sample is because the too fast structural constituent of reaction is difficult to control, there is macrosegregation, tissue odds is even, sometimes also reaction is incomplete, the hot-forming back second phase SiC particle is obviously assembled, size big (up to 20 μ m), and equipment complexity (Chrysanthou A, et al.J.Mater.Sci., 1996,31 (16): 4221~4226; Bartlett A H et al.J.Mater.Sci., 1998,33 (6): 1653~1660.); Direct hot pressing element simple substance mixture (Alman D E, et al.Scrip.Metall.Mater., 1994,273~278.) and synthetic synchronously (the Alman D E of the reaction of element powders 31 (3):, et al.Scrip.Metall.Mater., 1993,28 (12): 1525~1530) also have transition phase in Zhi Bei the sample, and the former C fiber does not change into SiC fully, reaction not exclusively, the synthetic synchronously compact formed matrix material of hot isostatic pressing technique that adopts of the reaction of element powders, the equipment complexity, the cost height, the second phase SiC particle size is big, assemble serious, skewness.The MoSi of above-mentioned many prepared 2The mechanical property that the appearance meeting of glassy phase significantly reduces material in the-SiC matrix material is mechanical behavior under high temperature especially, and the second phase SiC particle size is big, assemble remarkable improvement serious, that skewness also is unfavorable for composite materials property, and Mo 5Si 3Can reduce the high temperature oxidation resistance of matrix material etc. the existence of transition phase.
The objective of the invention is to prepare silicon carbide particle reinforced molybdenum silicide based composite material, do not reducing MoSi by control original position recombining process parameter 2Under the prerequisite of high temperature oxidation resistance, improve MoSi to greatest extent 2The low temperature of-SiC matrix material and mechanical behavior under high temperature, and technology is easy to control, equipment is simple.
Summary of the invention:
The present invention is by control original position recombining process parameter, solid eliminate low temperature between Mo, Si and the C element powder solid-reaction, and utilize the solid-liquid reaction original position between them to synthesize MoSi 2-SiC composite powder, and with fine and close this MoSi of secondary hot pressing 2-SiC composite powder prepares interface cleaning, no SiO 2Glassy phase and Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, small and dispersed SiC particle to strengthen MoSi 2Two-phase composite material.The concrete related MoSi of the present invention 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-0%SiC~MoSi 2-100%SiC, the content of element powders calculates by the stoichiometric ratio of corresponding composition proportioning matrix material.The concrete preparation process of matrix material is as follows: be pressed into the green compact sample after element powders is weighed up and mixes by proportioning, green density is 60~75% of a mixed powder theoretical density.The green compact sample carries out reaction in and synthesizes after 400~600 ℃ of vacuum outgass in the mobile pure argon, stove is chilled to room temperature then.Reaction in synthetic technology is: 1410~1470 ℃ of temperature, 120 ℃/min of temperature rise rate, soaking time 0.5~1h.After material fragmentation with reaction in after synthetic becomes 180 μ m~450 μ m powder, carry out hot-forming, 1700~1750 ℃ of temperature, soaking time 1~2h, 30~the 40MPa that exerts pressure is cooled to 400~500 ℃ with the speed of 10~20 ℃/min, naturally cools to room temperature at last.Decompression gradually behind pressurize to 1200 in the process of cooling after hot pressing~1300 ℃.All the time feeding mobile Ar gas in the hot pressing protects.
The invention has the advantages that by control original position recombining process parameter, solid can eliminate low temperature between Mo, Si and the C element powder solid-reaction, effectively utilize the solid-liquid reaction original position between them to synthesize MoSi 2~SiC composite powder by secondary hot pressing, makes the matrix material of the densification of acquisition can guarantee to have only MoSi again 2With the SiC two-phase, interface cleaning, no SiO 2Glassy phase and Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, the second phase SiC particle small and dispersed to be distributed in MoSi 2On the matrix, therefore, this matrix material can be guaranteed do not reducing MoSi 2In the time of high temperature oxidation resistance, can improve the low temperature and the mechanical behavior under high temperature of matrix material to greatest extent.Because the present invention only need control original position recombining process parameter, need not hot isostatic apparatus, so technology easy, be easy to control, equipment is simple.
Description of drawings:
Fig. 1 is MoSi 2The XRD spectral line of-SiC matrix material.
Fig. 2 is MoSiC30 matrix material MoSi 2HREM picture with SiC two-phase phase boundary.
Fig. 3 is the metallographic structure of MoSiC30 matrix material.
Fig. 4 is MoSi 2-SiC matrix material room temperature fracture toughness property is with the variation of SiC volume fraction.
Fig. 5 is single MoSi 2(a) and MoSiC30 (b) compression true stress-strain curve.
Synthetic and the commercial powder MoSi that mixes of hot pressing of original position when Fig. 6 is stress 80MPa 2The creep curve of-30%SiC relatively.
Embodiment
Embodiment: test MoSi 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-30%SIC writes a Chinese character in simplified form into MoSiC30, and the content of element powders is calculated as by the stoichiometric ratio of forming MoSiC30: Mo: Si: C=51.71: 42.90: 5.39wt%.Used starting material are Mo powder, Si powder and Graphite Powder 99, and mean particle size and purity are Mo:8 μ m, 99.0%; Si:7 μ m, 99.0%; C:22, μ m, 99.9%.After element powders weighed up by proportioning, add the different ZrO of an amount of diameter 2Ball and dehydrated alcohol, wet mixing 10h on the roller ball mill.The powder that mixes is pressed into φ 30 * 15mm circle base sample, and pressed density is 70% of a mixed powder theoretical density.Circle base sample carries out original position in the pure argon 99.91% after 500 ℃ of vacuum outgass synthetic, and stove is chilled to room temperature then.Concrete technology is: 1450 ℃ of temperature, 120 ℃/min of temperature rise rate, soaking time 1h.After material fragmentation with reaction in after synthetic becomes 180 μ m powder, carry out hot-formingly, pressed compact is of a size of about φ 50mm * 8mm, 1740 ℃ of temperature, soaking time 2h, 40MPa exerts pressure, speed with 10 ℃/min is cooled to 500 ℃, naturally cools to room temperature at last.Decompression gradually after the pressurize to 1300 ℃ in the process of cooling after hot pressing.All the time feeding mobile Ar gas in the hot pressing protects.
The MoSiC30 matrix material that obtains through above-mentioned technology only contains MoSi 2With the SiC two-phase, do not contain Mo 5Si 3, Mo ≤ 5Si 3C ≤ 1Wait other transition phases, nor have SiO 2Glassy phase, interface cleanness are seen Fig. 1, Fig. 2.The SiC particle size is 3~5 μ m, and evenly tiny, disperse is distributed in MoSi 2On the matrix, see Fig. 3.The porosity of this matrix material is (0.044 ± 0.014) %, can think to reach complete densification.The room temperature fracture toughness property of this material is than single MoSi 2Have clear improvement, see Fig. 4.1000 ℃, 1200 ℃, 1400 ℃ high temperature compressed flow curve is apparently higher than single MoSi 2, its high-temperature stream varying stress, yield strength significantly improve, and see Fig. 5.Its high temperature creep drag is much higher than the MoSi of the prior powder metallurgy prepared that adopts the commercial mixed powder of hot pressing 2-30%SiC matrix material is seen Fig. 6.

Claims (2)

1, a kind of in-situ compounding process for preparing silicon carbide particle reinforced molybdenum silicide based composite material, MoSi 2The chemical constitution of-SiC matrix material by volume per-cent is MoSi 2-0%SiC~MoSi 2-100%SiC, the content of element powders calculates by the stoichiometric ratio of forming this matrix material, it is characterized in that reaction in synthetic technology is: 1410~1470 ℃ of temperature, temperature rise rate 〉=120 ℃/min, soaking time 0.5~1h.After material fragmentation with reaction in after synthetic becomes-40~-80 order powder, carry out hot-forming, 1700~1750 ℃ of temperature, soaking time 1~2h, 30~the 40MPa that exerts pressure is cooled to 400~500 ℃ with the speed of 10~20 ℃/min, naturally cools to room temperature at last.Decompression gradually after 1200~1300 ℃ in the process of cooling after hot pressing.
2, in-situ compounding process as claimed in claim 1, the preparation that it is characterized in that matrix material are to be pressed into the green compact sample after element powders is weighed up and mixes by proportioning, and green density is 60~75% of a mixed powder theoretical density.The green compact sample carries out reaction in and synthesizes after 400~600 ℃ of vacuum outgass in the mobile pure argon.
CN 01141978 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material Expired - Fee Related CN1215185C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 01141978 CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 01141978 CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Publications (2)

Publication Number Publication Date
CN1344810A true CN1344810A (en) 2002-04-17
CN1215185C CN1215185C (en) 2005-08-17

Family

ID=4676531

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 01141978 Expired - Fee Related CN1215185C (en) 2001-09-26 2001-09-26 In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material

Country Status (1)

Country Link
CN (1) CN1215185C (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1321092C (en) * 2006-03-14 2007-06-13 西北工业大学 Method for preparing anti-oxidation multiple phase coating of carbon/carbon composite material surface
CN101812622B (en) * 2010-02-08 2011-07-20 吉林大学 Ceramic-intermetallic compound composite material containing binder and preparation method thereof
CN101386551B (en) * 2008-10-29 2011-12-28 陕西科技大学 Method for preparing carbon/carbon compound material nano silicon carbide-silicon molybdenum composite coating
CN104261835A (en) * 2014-09-19 2015-01-07 中南大学 Method for preparing molybdenum disilicide heating element
CN105731471A (en) * 2016-01-28 2016-07-06 陕西科技大学 A kind of preparation method of MoSi2-Mo5Si3-SiO2 composite material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1321092C (en) * 2006-03-14 2007-06-13 西北工业大学 Method for preparing anti-oxidation multiple phase coating of carbon/carbon composite material surface
CN101386551B (en) * 2008-10-29 2011-12-28 陕西科技大学 Method for preparing carbon/carbon compound material nano silicon carbide-silicon molybdenum composite coating
CN101812622B (en) * 2010-02-08 2011-07-20 吉林大学 Ceramic-intermetallic compound composite material containing binder and preparation method thereof
CN104261835A (en) * 2014-09-19 2015-01-07 中南大学 Method for preparing molybdenum disilicide heating element
CN105731471A (en) * 2016-01-28 2016-07-06 陕西科技大学 A kind of preparation method of MoSi2-Mo5Si3-SiO2 composite material
CN105731471B (en) * 2016-01-28 2017-12-05 陕西科技大学 A kind of MoSi2‑Mo5Si3‑SiO2The preparation method of composite

Also Published As

Publication number Publication date
CN1215185C (en) 2005-08-17

Similar Documents

Publication Publication Date Title
CN101215173B (en) Method for preparing ZrB2-SiC-ZrC diphase ceramic material
Lysenkov et al. Composite material Si3N4/SiC with calcium aluminate additive
CN105859301B (en) A kind of silicon nitride ceramics and preparation method thereof
Li et al. Synthesis of high pure Ti3AlC2 and Ti2AlC powders from TiH2 powders as Ti source by tube furnace
JPS5924751B2 (en) Sintered shaped body
CN113004047B (en) (CrZrTiNbV) N high-entropy ceramic block and preparation method thereof
CN107512912A (en) The preparation method of high-purity MoAlB ceramic powders and compact block
CN102219536A (en) A kind of B4C/SiC whisker/SiC multiphase ceramic matrix composite material and preparation method thereof
CN103011827A (en) Preparation method of zirconium diboride ceramic with in-situ-introduced boron as additive
JP2017504552A (en) Method for producing titanium nitride-titanium diboride-cubic boron nitride composite material
CN106882965A (en) A kind of method that normal pressure prepares the aluminium toner body material of high purity titanium two
CN101407421B (en) Method for preparing non-grain boundary phase porous silicon nitride ceramic based on siliconizing nitridation
Souto et al. Sintering of commercial mulite powder: Effect of MgO dopant
CN109678540A (en) BN nanotube interface phase Strengthening and Toughening carbon fibre reinforced ceramics based composites and preparation method thereof
CN1344810A (en) In-situ compounding process of preparing silicon carbide particle reinforced molybdenum silicide based composite material
CN100519469C (en) Method for preparing massive compact high-pure single-phase Y2SiO5 ceramic block material at low temperature
CN104911384B (en) Low-temperature preparation method of tungsten-based infusible carbide composite
CN110922195B (en) Method for preparing magnesium aluminum spinel-silicon carbide composite material by in-situ reaction
Abilev et al. Structural-phase state and properties of SiC ceramics obtained by ultrasound-assisted liquid-phase sintering with eutectic additives
Sun et al. Synthesis and consolidation of ternary compound Ti3SiC2 from green compact of mixed powders
Lee et al. Characterization of forsterite ceramics
JP4362582B2 (en) Method for producing sintered metal ceramic titanium silicon carbide
JPH0812441A (en) Production of silicon nitride-based sintered compact
Xi et al. Preparation of O′-Sialon-based ceramics by two-stage liquid phase sintering and study on the toughening mechanism of ultrafine-grained sintered clusters
CN103938050B (en) The corrosion of resistance to aluminium high desnity metal stupalith

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee