CN1331494A

CN1331494A - Integrated device of laser and photoelectric switch

Info

Publication number: CN1331494A
Application number: CN 00107893
Authority: CN
Inventors: 林世明
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2000-06-29
Filing date: 2000-06-29
Publication date: 2002-01-16
Anticipated expiration: 2020-06-29
Also published as: CN1124653C

Abstract

A laser and photoelectric switch integrated device is prepared through sequentially growing n-type GaAs buffer layer, n-type AlAs/Al0.1Ga0.9As, n-type Al0.25Ga0.75As lower limit layer, active GaAs layer, p-type Al0.25Ga0.75As upper limit layer, p-type AlAs layer, p-type AlAs/Al0.1Ga0.9As layer and p-type Al0.1Ga0.9As ohm contact layer on n-type GaAs substrate to form VSCEL structure layer, growing high-corrosion stopping AlAs layer, and growing MISS on VCSEL. Its epitaxial layers are sequentially p-GaAs, n-GaAs and AlAs layers.

Description

The device that a kind of laser and optoelectronic switch are integrated

The present invention relates to semiconductor device, particularly a kind of laser and the integrated device of optoelectronic switch.

Existing in the world with vertical cavity surface emitting laser (VCSEL) and other photoelectric devices such as HPT, the integrated report of PNPN (is seen document: [1] R.S.Geels, S.W.Corzine, et al., " Lowthreshold; planarized vertical-cavity surface-emitting lasers; " IEEEPhoton.Technol.Lett., vol.2 pp.234-236,1990.[2] R.P.Bryan, G.R.Olbright, et al., " Cascadable Surface-emitting laser logic:Demonstrationof boolean logic; " Electron Lett., vol.27, No.11, pp.894-894, May 1991.[3] J.Cheng, P.Zhou, et al., " Surface-Emitting Laser-Based Smart Pixels forTwo-Dimensional Optical Logical and Reconfigurable OpticalInterconnections " IEEE J.Quantum Electron., Vol.29, NO.2, pp741-755, Feb.1993.[4] T.yamamoto and M.Morimoto, Applied Physics Letters, 20,269,1972.).And VCSEL and the integrated fabricate devices of MISS (as OR-gate), also do not have in the world.

Owing to can realizing two-dimensional array, VCSEL reaches and the new functional unit of the integrated formation of other device works, therefore,

The purpose of this invention is to provide the integrated device of a kind of laser and optoelectronic switch, it is to constitute new integrated device with VCSEL and metal-insulator semiconductor switch (MISS), this new integrated device can constitute various photoelectricity gates, as with door or door, not gate etc.

The present invention realizes by following method: the device that a kind of laser and optoelectronic switch are integrated is characterized in that, on n type GaAs substrate, with MBE method growing n-type GaAs resilient coating successively, n type AlAs/Al _0.1Ga _0.9As, n type Al _0.25Ga _0.75The As lower limit layer, GaAs active layer, p type Al _0.25Ga _0.75The As upper limiting layer, p type AlAs layer, p type AlAs/Al _0.1Ga _0.9As layer and p type Al _0.1Ga _0.9The As ohmic contact layer; The vcsel structure layer growth finishes; The high etch stop layer of the growth one deck AlAs of elder generation before growth MISS; Next MISS grows on VCSEL: epitaxial loayer is followed successively by p-GaAs, n-GaAs and AlAs layer.

Wherein after device architecture has been grown, the AlAs on epitaxial wafer surface is oxidized to Al _xO _y, as the semi-insulating layer of MISS; Corroded the n type layer table top of MISS structure from the surface downwards, and be stopped in the p type layer, and stopped layer with the selective corrosion corrosion to AlAs again, growth silicon oxynitride (SiON) is sheltered the MISS structure.

Wherein when corrosion vcsel structure layer table top, corrosion depth is a wavelength AlAs layer in n-DBR, and the two-layer wavelength AlAs up and down to active layer carries out oxidation then, becomes Al _xO _y, constitute VCSEL electric current inlet.

Wherein said metal insulater-semiconductor switch is the GaAs MISS with molecular beam epitaxy or the organic vapour deposition method growth of metal.

At last, make the electrode of response according to different purposes.

In making MISS technology, generally need on GaAs, to grow layer of silicon dioxide (SiO ₂) as semi-insulating layer, but growthing silica is relatively more difficult on GaAs.In the present invention, adopt the AlAs that on GaAs, grows, be oxidized to Al _xO _yAs semi-insulating layer, simplified technology, reduced cost.Utilize integrated device of the present invention can constitute various and door, not gate, and response speed is fast.

The present invention is further illustrated below in conjunction with drawings and Examples, wherein:

Fig. 1 is the profile of embodiment of the invention VCSEL/MISS integrated device.

See also figure l, the used epitaxial wafer of VCSEL/MISS integrated device adopts molecular beam epitaxy (MBE) growth, and substrate 7 is selected n type GaAs single-chip (Si:3 * 10 for use ¹⁸Cm ^-3), each epitaxial loayer is followed successively by: n type GaAs (Si:3 * 10 ¹⁸Cm ^-3) resilient coating, thick 0.5 μ m,

To n type AlAs/Al _0.1Ga _0.9As (Si:2 * 10 ¹⁸Cm ^-3)

Wavelength epitaxially deposited layer 6 (N-DBR speculum) is for reducing series resistance, AlAs/Al _0.1Ga _0.9Introduced Al component x value between the As and be 0.4 Al _0.4Ga _0.6The As layer is used for a wavelength n-AlAs layer 11 of technology after the oxidation, the n type Al of half-wavelength _0.25Ga _0.75As (Si:22 * 10 ¹⁸Cm ^-3) lower limit layer, GaAs quantum well active area 10, the p type Al of half-wavelength _0.25Ga _0.75As (Be:32 * 10 ¹⁸Cm ^-3) upper limiting layer, be used for a wavelength p-AlAs layer 9 of technology after the oxidation,

Right

Wavelength P type AlAs/Al _0.1Ga _0.9As (Be:3 * 10 ¹⁸Cm ^-3) epitaxially deposited layer 5 (P-DBR speculum), same, for reducing series resistance, at the AlAs/Al of P type DBR _0.1Ga _0.9Introduced Al component x value between the As and be 0.4 Al _0.4Ga _0.6The As layer is 15nmP type (Be:2 * 10 at last ¹⁹Cm ^-3) Al _0.1Ga _0.9The heavily doped ohmic contact layer 8 of As.So far, the vcsel structure layer growth finishes.Next growth MISS structure sheaf on VCSEL.Separate with 400nmAlAs etch stop layer 4 (etch-stop) between VCSEL and MISS structure sheaf, the MISS structure is followed successively by, 0.5 μ m (1 * 10 ¹⁹Cm ^-3) p-GaAs layer 3,1.4 μ m n-GaAs layer 2 (1 * 10 ¹⁶Cm ^-3), the 3nm AlAs layer 1 of growing at last.In the technology of back, 3nm AlAs is oxidized to Al _xO _yLayer, and with Al _xO _yLayer is as the semi-insulating layer of MISS.

A) in the device technology preparation, the 3nm AlAs on epitaxial wafer surface is oxidized to Al _xO _yLayer, and with Al _xO _yLayer is as the semi-insulating layer of MISS.Be the bottom electrode of preparation MISS, corroded the table top of the n type layer of MISS structure from the surface downwards, be stopped in the p type layer.Be deep to AlAs etch-stop layer with the selective corrosion corrosion again.Growth SiON shelters the MISS structure.

B) corrosion vcsel structure layer table top, the wavelength n-AlAs layer of control corrosion depth in n-DBR.Utilize the fast characteristic of thick AlAs oxidation rate, under 420 ℃ of conditions, carry 90 ℃ of H by nitrogen ₂O vapour carries out oxidation to a two-layer wavelength AlAs up and down of active layer, and the AlAs layer is oxidized to the good Al of electric insulation _xO _yLayer, and by Al _xO _yLayer constitutes VCSEL electric current inlet.

C) electrode preparation, the Different Logic function of the integrated unit structure that should constitute according to VCSEL/MISS, connecting with a MISS as a VCSEL can an integrated photon switch; The MISS series connection of a VCSEL and two parallel connections can be integrated into a photon OR-gate; And adopt the corresponding electrode mask plate to finish the preparation of front and back electrode.

Claims

1, the integrated device of a kind of laser and optoelectronic switch is characterized in that, on n type GaAs substrate, with MBE method growing n-type GaAs resilient coating successively, n type AlAs/Al _0.1Ga _0.9As, n type Al _0.25Ga _0.75The As lower limit layer, GaAs active layer, p type Al _0.25Ga _0.75The As upper limiting layer, p type AlAs layer, p type A1As/Al _0.1Ga _0.9As layer and p type Al _0.1Ga _0.9The As ohmic contact layer; The vcsel structure layer growth finishes;

The high etch stop layer of the growth one deck AlAs of elder generation before growth MISS;

Next MISS grows on VCSEL: epitaxial loayer is followed successively by p-GaAs, n-GaAs and AlAs layer.

2, a kind of laser according to claim 1 and the integrated device of optoelectronic switch is characterized in that, wherein after device architecture has been grown, the AlAs on epitaxial wafer surface are oxidized to Al _xO _y, as the semi-insulating layer of MISS; Corroded the n type layer table top of MISS structure from the surface downwards, and be stopped in the p type layer, and stopped layer with the selective corrosion corrosion to AlAs again, the growth silicon oxynitride is sheltered the MISS structure.

3, a kind of laser according to claim 1 and the integrated device of optoelectronic switch, it is characterized in that wherein when corrosion vcsel structure layer table top, corrosion depth is a wavelength AlAs layer in n-DBR, two-layer wavelength AlAs up and down to active layer carries out oxidation then, becomes Al _xO _y, constitute VCSEL electric current inlet.

4, a kind of laser according to claim 1 and the integrated device of optoelectronic switch is characterized in that, wherein said metal one insulator semiconductor switch is the GaAs MISS with molecular beam epitaxy or the organic vapour deposition method growth of metal.